JP4021389B2 - Substrate liquid processing method and substrate liquid processing apparatus - Google Patents

Description

  The present invention relates to a substrate liquid processing method and a substrate liquid processing apparatus.

  In a photolithography process in a semiconductor device manufacturing process, for example, a resist coating process for applying a resist solution on a wafer to form a resist film, or a development for supplying a developer to an exposed wafer and developing the wafer A plurality of liquid treatments such as treatment are performed.

  For example, the development processing described above is normally performed in a development processing apparatus, and the development processing apparatus is supplied with a pure water supply nozzle that discharges pure water onto the wafer, for example, for pre-wetting, and a developer on the wafer. A developer supply nozzle is provided. The developer discharge nozzle has, for example, a slit-like discharge port longer than the diameter of the wafer on the lower surface thereof, and is movable in the horizontal direction on the surface of the wafer held by the chuck. During the development process, first, pure water is supplied onto the wafer from the pure water supply nozzle, a liquid film of pure water is formed on the wafer, and the wettability of the wafer surface is improved. Thereafter, the developer supply nozzle moves from one end of the wafer to the other end while discharging the developer, and a liquid film of the developer is formed on the surface of the wafer. Then, the wafer is statically developed by maintaining the wafer for a predetermined time in a state where the developer liquid film is formed (see, for example, Patent Document 1).

JP 2001-44100 A

  As described above, in the conventional development processing, two types of processing solutions may be continuously supplied onto the wafer in the order of pure water and developer. At present, in order to more strictly control the development progress and development speed of the wafer, a method of supplying the developer first to the wafer and then supplying pure water or supplying the developer twice. Methods are being studied.

  However, when the second processing liquid is supplied onto the wafer while moving the nozzle as in the developer supply nozzle described above, the liquid already accumulated as the nozzle 200 moves as shown in FIG. The first processing liquid L1 is pushed out to the traveling direction side of the nozzle 200, that is, the other end side of the wafer W, and the first processing liquid L1 rises in the vicinity of the other end of the wafer W. Then, when the second processing liquid L2 is supplied onto the raised first processing liquid L1, the concentration of the second processing liquid L2 near the other end of the wafer W is increased as shown in FIG. It is diluted with a large amount of the first treatment liquid L1, and the concentration of the second treatment liquid L2 is locally reduced (portion A in FIG. 20). As a result, when the liquid film of the second processing liquid L2 is formed on the wafer W, the concentration of the processing liquid in the wafer surface becomes non-uniform. If the concentration of the processing liquid becomes uneven in the wafer surface in this way, the development progress and the development speed vary in the wafer surface, and it becomes impossible to ensure development uniformity such as line width uniformity.

  The present invention has been made in view of the above points, and in the liquid processing such as the development processing, the processing liquid is further supplied to the substrate such as a wafer on which the processing liquid is already deposited while moving the nozzle. In this case, it is an object of the present invention to provide a substrate liquid processing method and a substrate liquid processing apparatus capable of maintaining a uniform concentration of the processing liquid in the substrate surface.

In order to achieve the above object, the present invention is a method of supplying a processing liquid to a substrate and liquid-treating the substrate, wherein the first processing liquid is supplied onto the substrate, and the first on the surface of the substrate. Forming a liquid film of the processing liquid, and then a nozzle for supplying the processing liquid is disposed above the substrate on which the liquid film of the first processing liquid is formed from one end side to the other end side of the substrate. Supplying a second processing liquid onto the substrate while moving to a substrate, and forming a liquid film of the second processing liquid on the surface of the substrate. In the forming step, the first nozzle on the other end of the substrate is reached before the nozzle reaches above the other end of the substrate and the second processing liquid is supplied onto the other end. A part of the processing liquid is removed from the substrate, and the concentration of the processing liquid in the substrate surface is made uniform .

  According to the present invention, before the second processing liquid is supplied onto the other end portion of the substrate, a part of the first processing liquid raised on the other end portion of the substrate is removed. The second treatment liquid is not diluted with a large amount of the first treatment liquid on the other end, and the concentration of the treatment liquid in the substrate surface is kept uniform. As a result, the liquid treatment in the substrate surface is performed uniformly.

  The removal of the first treatment liquid on the other end of the substrate may be performed by bringing a hydrophilic treatment liquid removal member into contact with the first treatment liquid. In such a case, when the hydrophilic processing liquid removing member is brought into contact with the first processing liquid, the first processing liquid on the substrate flows into the processing liquid removing member side by capillary action. As a result, only a part of the first processing liquid on the other end of the substrate can be properly removed. The “hydrophilicity” of the treatment liquid removing member may be at least hydrophilic than the surface of the substrate.

  Further, the removal of the first processing liquid on the other end of the substrate may be performed by bringing a processing liquid removing member that sucks the liquid by a negative pressure close to the first processing liquid. In such a case, the first processing liquid on the substrate can be sucked and removed by the processing liquid removing member.

  The removal of the first processing liquid on the other end of the substrate is performed after the nozzle starts supplying the second processing liquid onto the one end of the substrate until it arrives above the other end of the substrate. It may be done. In this case, since the first processing liquid is removed after the supply of the second processing liquid is started, for example, the reaction between the first processing liquid and the substrate is sufficiently performed, and the first processing liquid is used. After the processing is completed, the first processing liquid is removed. Therefore, the processing of the substrate with the first processing liquid is appropriately performed, and the entire liquid processing is also appropriately performed.

  The first processing solution may be a developer, the second processing solution may be pure water, the first processing solution may be pure water, and the second processing solution may be a developer. Good. Further, both the first processing liquid and the second processing liquid may be a developer. In such a case, since the concentration of the developer on the substrate is maintained uniformly in the substrate surface, the development in the substrate surface is performed uniformly.

According to another aspect of the present invention, there is provided a liquid processing apparatus according to the present invention, wherein a second processing liquid is moved from one end side to the other end side of a substrate on which a liquid film of the first processing liquid is formed. And a nozzle for forming a liquid film of the second processing liquid on the surface of the substrate, and when forming the liquid film of the second processing liquid, the nozzle is connected to the other end of the substrate. Before the second processing liquid is supplied onto the other end of the substrate, the first processing liquid on the other end of the substrate is removed from the substrate, And a treatment liquid removing member for making the concentration of the treatment liquid uniform .

  According to this invention, before supplying the second processing liquid onto the other end of the substrate by the nozzle, a part of the large amount of the first processing liquid on the other end is removed by the processing liquid removing member. can do. As a result, the second processing liquid is not diluted with a large amount of the first processing liquid on the other end portion of the substrate, and the concentration of the processing liquid in the substrate surface is kept uniform. As a result, the liquid treatment in the substrate surface is performed uniformly.

  The substrate processing apparatus further includes a moving mechanism that moves the processing solution removal member to contact the first processing solution on the other end of the substrate, and includes at least a first of the processing solution removal member. The contact portion with the treatment liquid may be hydrophilic. In this case, the hydrophilic processing liquid removing member can be brought into contact with the first processing liquid on the other end portion of the substrate, and the first processing liquid on the substrate can be removed using capillary action.

  The contact portion of the processing liquid removing member may be formed in a shape that matches the outer shape of the other end portion of the substrate. Further, the contact portion of the processing liquid removing member may be formed in a circular arc shape having the same diameter as the substrate when viewed from above and protruding away from the substrate. In such a case, the first processing liquid can be removed from the substrate by bringing the processing liquid removing member into linear contact with the first processing liquid on the substrate.

  The contact portion of the treatment liquid removing member may be formed in a rod shape protruding toward the other end side of the substrate. In such a case, the rod-shaped portion can be brought into point contact with the first processing liquid on the substrate, and the first processing liquid can be sucked and removed from the substrate.

  The processing liquid removing member may include a suction unit that approaches the first processing liquid on the end of the substrate and sucks the first processing liquid with a negative pressure. In such a case, the first processing liquid on the other end of the substrate can be removed by sucking the first processing liquid on the substrate from the suction section. The suction part of the treatment liquid removing member may be formed in a shape that matches the outer shape of the other end side of the substrate.

  The substrate liquid processing apparatus further includes a cleaning mechanism that cleans the processing liquid removal member, and the cleaning mechanism supplies a cleaning liquid to the cleaning tank that stores the processing liquid removal member and the stored processing liquid removal member. And a cleaning liquid supply unit. In such a case, for example, the treatment liquid removing member to which the first treatment liquid adheres can be cleaned, and for example, it is possible to prevent the attached first treatment liquid from causing particles.

  The liquid processing apparatus for a substrate according to any one of claims 8 to 16 may be a development processing apparatus, wherein the first processing liquid is a developing liquid and the second processing liquid is pure water. The first processing solution may be pure water, the second processing solution may be a developer, and the first processing solution and the second processing solution may be a developer. Good. In such a case, since the concentration of the developer supplied onto the substrate is kept uniform in the substrate surface, the development of the substrate can be performed uniformly in the substrate surface.

  According to the present invention, since the processing within the substrate surface is uniformly performed, products of the same quality are manufactured within the substrate surface, and the yield is improved.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view schematically showing the configuration of a coating and developing treatment system 1 in which the liquid processing apparatus according to the present embodiment is mounted, and FIG. 2 is a front view of the coating and developing treatment system 1. FIG. 2 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in units of cassettes and carries the wafers W in and out of the cassettes C. A cassette station 2, a processing station 3 in which various processing devices for performing predetermined processing in a sheet-fed process in the coating and developing processing step are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.

  In the cassette station 2, a plurality of cassettes C can be placed in a line in a X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placement table 5 serving as a placement portion. The cassette station 2 is provided with a wafer transfer body 6 that moves along the arrangement direction (X direction) of the cassette C. The wafer carrier 6 is also movable in the arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selected with respect to the wafers W in each cassette C on the cassette mounting table 5. Accessible.

  The wafer carrier 6 has an alignment function for aligning the wafer W. As will be described later, the wafer carrier 6 is configured to be able to access an extension device 32 belonging to the third processing device group G3 on the processing station 3 side.

  In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In this coating and developing processing system 1, four processing device groups G1, G2, G3, and G4 are disposed, and the first and second processing device groups G1 and G2 are disposed on the front side of the coating and developing processing system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 can carry in and out the wafer W with respect to various processing devices (to be described later) arranged in these processing device groups G1, G2, G3, G4, and G5. The number and arrangement of processing apparatus groups vary depending on the type of processing performed on the wafer W, and can be arbitrarily selected.

  In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 that coats a resist solution on a wafer W and forms a resist film on the wafer W, and a liquid processing unit according to the present embodiment. The development processing devices 18 are arranged in two stages in order from the bottom. Similarly, in the second processing unit group G2, the resist coating unit 19 and the development processing unit 20 are arranged in two stages in order from the bottom.

  In the third processing unit group G3, for example, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and the delivery of the wafer W are performed. The extension device 32, the pre-baking devices 33 and 34 for evaporating the solvent in the resist solution, and the post-baking device 35 for performing the heat treatment after the development processing are stacked in, for example, six stages from the bottom.

  In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 that naturally cools the mounted wafer W, an extension unit 42, a cooling unit 43, a post-exposure baking unit 44 that performs heat treatment after exposure, 45 and post-baking devices 46 are stacked, for example, in seven steps from the bottom.

  For example, a wafer carrier 50 is provided at the center of the interface unit 4 as shown in FIG. This wafer carrier 50 is capable of moving in the X direction (vertical direction in FIG. 1), Z direction (vertical direction) and rotating in the θ direction (rotating direction around the Z axis). It is configured to be able to access the extension / cooling device 41, the extension device 42, the peripheral exposure device 51 and the exposure device (not shown) belonging to the group G4 and to transfer the wafer W to each device.

  Next, the configuration of the development processing apparatus 18 described above will be described in detail. FIG. 4 is an explanatory view of a longitudinal section showing an outline of the configuration of the development processing apparatus 18, and FIG. 5 is an explanatory view of a transverse section of the development processing apparatus 18.

  As shown in FIG. 4, a spin chuck 60 that holds the wafer W is provided at the center of the casing 18 a of the development processing apparatus 18. The spin chuck 60 has a horizontal upper surface, and a suction port (not shown) for sucking, for example, the wafer W is provided on the upper surface. By suction from the suction port, the spin chuck 60 can hold the wafer W by suction.

  The spin chuck 60 is provided with a chuck drive mechanism 61 for rotating and lifting the spin chuck 60, for example. The chuck drive mechanism 61 is, for example, a rotation drive unit (not shown) such as a motor that rotates the spin chuck 60 around a vertical axis at a predetermined speed, or a lift drive unit such as a motor or cylinder that moves the spin chuck 60 up and down ( (Not shown). With this chuck drive mechanism 61, the wafer W on the spin chuck 60 can be moved up and down at a predetermined timing or rotated at a predetermined speed.

  Around the spin chuck 60, there is provided a cup 62 that receives and collects the liquid scattered or dropped from the wafer W. For example, the cup 62 surrounds the periphery of the spin chuck 60 and mainly receives the side wall portion 63 that receives the liquid splashed outward from the wafer W, and covers the lower side of the wafer W and mainly drops from the side wall portion 63 and the wafer W. It has a bottom 64 for receiving it separately.

  For example, as shown in FIG. 5, the side wall 63 is formed in a substantially rectangular shape when viewed from above. As shown in FIG. 4, the side wall 63 can be moved up and down by an elevating drive unit 65 such as a cylinder. A spin chuck 60 passes through the center of the bottom 64. An annular member 66 is provided around the spin chuck 60 to block the flow of liquid that has flowed from the front surface to the back surface of the wafer W. The annular member 66 includes, for example, a top near the back surface of the wafer W, and the liquid flow can be blocked at the top. The bottom 64 is connected to, for example, a discharge pipe 67 communicating with a liquid discharge section of a factory, and the liquid recovered in the cup 62 can be discharged from the development pipe 18 through the discharge pipe 67.

  As shown in FIG. 5, a rail 70 extending along the Y direction is formed on the X direction negative direction (downward in FIG. 5) side of the cup 62. The rail 70 is formed, for example, from the outside of the cup 62 on the Y direction negative direction (left direction in FIG. 5) to the outside of the cup 62 on the Y direction positive direction side. Two arms 71 and 72 are attached to the rail 70. A treatment liquid supply nozzle 73 is supported on the first arm 71. The first arm 71 is movable in the Y direction on the rail 70 by the drive mechanism 74, and can transfer the processing liquid supply nozzle 73 from the outside to the inside of the cup 62 along the Y direction. Further, the first arm 72 can be moved in the vertical direction by the drive mechanism 74, and the processing liquid supply nozzle 73 can be moved up and down.

  The processing liquid supply nozzle 73 has a long and narrow shape in the X direction, and discharge ports 80 and 81 are formed on the lower surface thereof as shown in FIG. The discharge ports 80 and 81 are formed in a slit shape that is at least longer than the diameter of the wafer W along the longitudinal direction of the processing liquid supply nozzle 73, and are formed in two rows on the lower surface of the processing liquid supply nozzle 73. For example, a developer introduction port 83 communicating with a developer supply device 82 installed outside the development processing device 18 is formed on the upper surface of the treatment solution supply nozzle 73. The developer introduction port 83 communicates with a storage chamber 84 formed in the processing solution supply nozzle 73 along the X direction. In the lower part of the storage chamber 84, flow paths 85 communicating with the lower discharge ports 80 and 81 are formed. A porous body 86 that is long in the X direction along the slit-like discharge ports 80 and 81 is provided in the flow path 85 near the discharge ports 80 and 81. By this porous body 86, the discharge pressure of the developer discharged from the discharge ports 80 and 81 through the flow path 85 can be made uniform along the longitudinal direction of the processing liquid supply nozzle 73.

  A pure water discharge port 90 is formed between the discharge ports 80 and 81 arranged in two rows on the lower surface of the treatment liquid supply nozzle 73. The pure water discharge port 90 is also formed in a slit shape that is at least longer than the diameter of the wafer W along the longitudinal direction of the processing liquid supply nozzle 73 in the same manner as the discharge ports 80 and 81. In the processing liquid supply nozzle 73, for example, a pipe line 92 communicating with a pure water supply device 91 set outside the development processing device 18 is provided along the X direction. The pipe 93 communicates with the pipe 92. A porous body 94 is provided in the flow path 93, and pure water discharged from the pure water discharge port 90 is discharged at the same pressure in the X direction of the processing liquid supply nozzle 73.

  The other second arm 72 attached to the rail 70 supports a rinsing liquid supply nozzle 100 and a processing liquid removing member 101 as shown in FIG. The second arm 72 is movable in the Y direction on the rail 70 by, for example, the drive mechanism 102. Further, the second arm 72 is also movable in the vertical direction by the drive mechanism 102. Accordingly, the rinsing liquid supply nozzle 100 and the processing liquid removing member 101 supported by the second arm 72 are movable in the horizontal direction in the Y direction and the vertical direction in the development processing apparatus 18. Note that the moving mechanism of the processing liquid removing member 101 in the present embodiment is constituted by, for example, a rail 70, a second arm 72, and a driving mechanism 102.

  For example, as shown in FIG. 7, the treatment liquid removing member 101 is supported on the second arm 72 by a support member 110 formed downward from the side surface of the second arm 72 on the Y direction negative direction side. The processing liquid removing member 101 is formed, for example, in a horizontal and thin plate shape, and is formed from the support member 110 in the horizontal direction on the Y direction negative direction side. The contact portion 101a which is the end surface on the Y direction negative direction side of the processing liquid removing member 101 is formed in, for example, an arc shape having the same diameter as the wafer W when viewed from the plane and protruding in the Y direction positive direction side. Due to the shape of the contact portion 101a, as shown by the dotted line in FIG. 5, the processing liquid removing member 101 is brought close to the wafer W from the Y direction positive direction side, and the contact portion 101a is placed on the Y direction positive direction side of the wafer W. It is possible to make a line contact with the processing solution that is put up. The processing liquid removing member 101 is formed of a material having a hydrophilic property superior to at least the surface of the wafer W, for example, ceramics. Therefore, when the contact portion 101a of the processing liquid removing member 101 is brought into contact with the processing liquid on the other end side of the wafer W, the processing liquid flows into the processing liquid removing member 101 side by capillary action, and is on the wafer W. A part of the treatment liquid can be removed.

  As shown in FIG. 5, the rinsing liquid supply nozzle 100 communicates with, for example, a rinsing liquid supply apparatus 115 installed outside the development processing apparatus 18, and the rinsing liquid supplied from the rinsing liquid supply apparatus 115 is directed downward. It can be discharged toward the camera.

  A cleaning tank 120 that houses and cleans the rinsing liquid supply nozzle 100 and the processing liquid removing member 101 is provided outside the cup 62 on the positive side in the Y direction. As shown in FIGS. 8 and 9, the cleaning tank 120 is formed in a substantially box shape whose upper surface is open, and can accommodate the rinse liquid supply nozzle 100 and the processing liquid removing member 101 from above. As shown in FIG. 8, on both side walls of the cleaning tank 120 in the Y direction, flow pipes 121 through which the cleaning liquid flows are arranged along the X direction. The flow pipe 121 communicates with a cleaning liquid supply device 122 installed outside the development processing apparatus 18. A plurality of holes 123 as cleaning liquid supply portions are formed in a row along the X direction in the flow pipe 121, and the cleaning liquid is discharged from the holes 123 toward the inside of the cleaning tank 120. Therefore, the cleaning liquid can be supplied from the hole 123 to the rinsing liquid supply nozzle 100 and the processing liquid removal member 101 accommodated in the cleaning tank 120, and the dirt attached to the rinsing liquid supply nozzle 100 and the processing liquid removal member 101 can be removed. A drainage pipe 124 is connected to the bottom of the cleaning tank 120 as shown in FIG. 9 so that the cleaning liquid in the cleaning tank 120 can be drained. In the present embodiment, the cleaning tank 120, the flow sensation 121, the cleaning liquid supply device 122, and the hole 123 constitute a cleaning mechanism.

  As shown in FIG. 5, a cleaning tank 130 for storing and cleaning the processing liquid supply nozzle 73 is provided outside the cup 62 on the Y direction negative direction side.

  Next, a processing process performed in the development processing apparatus 18 configured as described above will be described together with a photolithography process performed in the coating and developing processing system 1.

  First, one unprocessed wafer W is taken out from the cassette C by the wafer transfer body 7 and transferred to the extension device 32 belonging to the third processing unit group G3. Next, the wafer W is carried into the adhesion device 31 by the main transfer device 13, and for example, HMDS for improving the adhesion of the resist solution is applied to the wafer W. Next, the wafer W is transferred to the cooling device 30, cooled to a predetermined temperature, and then transferred to the resist coating device 17. The wafer W on which the resist film is formed in the resist coating device 17 is sequentially transferred to the pre-baking device 33 and the extension / cooling device 41 by the main transfer device 13, and further, the peripheral transfer device 51 and the exposure device ( (Not shown) are sequentially conveyed, and predetermined processing is performed in each device. The wafer W that has undergone the exposure processing is transferred to the extension device 42 by the wafer transfer body 50, and then subjected to predetermined processing by the post-exposure baking device 44 and the cooling device 43, and then transferred to the development processing device 18. Development processing is performed.

  The wafer W that has undergone development processing in the development processing device 18 is sequentially transferred to the post-baking device 46 and the cooling device 30, subjected to predetermined processing in each device, and then returned to the cassette C via the extension device 32. , A series of photolithography processes is completed.

  Next, the development processing of the wafer W performed by the development processing apparatus 18 described above will be described in detail. When the main transfer device 13 carries the wafer W into the development processing device 18, the wafer W is held by suction on the spin chuck 60. Subsequently, the processing liquid supply nozzle 73 waiting in the cleaning tank 130 moves to the Y direction positive direction side, and before the end portion (one end portion) on the Y direction negative direction side of the wafer W in the cup 62 as viewed from above. Move up. Thereafter, the processing liquid supply nozzle 73 descends and the height is adjusted to a position slightly higher than the surface of the wafer W. For example, pure water as the first processing liquid starts to be discharged from the pure water discharge port 90. When the discharge of pure water is started, the processing liquid supply nozzle 73 moves from one end of the wafer W to the end (the other end) on the positive side in the Y direction as shown in FIG. A pure water liquid film P1 is formed on the surface.

  When the processing liquid supply nozzle 73 moves to the other end of the wafer W, the processing liquid supply nozzle 73 further moves slightly in the Y direction positive direction side and then stops, and the discharge of pure water is stopped. Thereafter, the processing liquid supply nozzle 73 is returned to the position on the one end side of the wafer W where the discharge of pure water is started, as shown in FIG. When the processing liquid supply nozzle 73 is returned to the one end side of the wafer W, for example, the processing liquid removing member 101 that has been waiting in the cleaning tank 120 is moved to the Y direction negative direction side by the second arm 72 and is removed from the plane. It moves inside the cup 62 as viewed and moves to a position on the positive side in the Y direction with respect to the other end of the wafer W. Thereafter, the processing liquid removing member 101 is lowered and the height is adjusted to the same height as the liquid film P1 on the wafer W.

  Subsequently, the developer as the second processing liquid starts to be discharged from the discharge port 80 of the processing liquid supply nozzle 73, and the processing liquid supply nozzle 73 starts to move in the Y direction positive direction side as shown in FIG. The movement of the processing liquid supply nozzle 73 forms a developer liquid film P2 on the wafer W. When the movement of the processing liquid supply nozzle 73 is started, for example, the processing liquid removing member 101 moves to the Y direction negative direction side, and the contact portion 101a of the processing liquid removing member 101 is purified water on the other end of the wafer W. It contacts the liquid film P1. By this contact, a part of pure water flows onto the processing liquid removing member 101. The deionized water that has flowed onto the processing liquid removing member 101 travels along the surface of the processing liquid removing member 101 and falls from the end of the processing liquid removing member 101 on the Y direction positive side to the lower cup 62 and is discharged. In this way, a portion of the pure water on the other end of the wafer W is removed before the processing liquid supply nozzle 73 reaches the other end of the wafer W. Then, as shown in FIG. 13, before the processing liquid supply nozzle 73 reaches the other end of the wafer W, the processing liquid removing member 101 moves backward in the Y direction positive direction, and on the other end of the wafer W. Separated from pure water. The treatment liquid removing member 101 separated from the pure water is returned to the cleaning tank 120 by the second arm 72. Note that the amount of pure water removed from the wafer W is adjusted by a preset contact time between the processing liquid removing member 101 and pure water.

  When the processing liquid removing member 101 is returned into the cleaning tank 120, the cleaning liquid is discharged from the plurality of holes 123 of the flow pipe 121 to the processing liquid removing member 101, and the dirt attached to the processing liquid removing member 101 is washed away. .

  When the processing liquid supply nozzle 73 reaches the other end of the wafer W in the cup 62 and the liquid film P2 of the developing liquid is formed on the entire surface of the wafer W, the discharge of the developing liquid is stopped and the processing liquid is supplied. The nozzle 73 is returned to the cleaning tank 130 by the first arm 71. The wafer W is maintained for a predetermined time in a state in which a liquid film of the developer is formed, and is statically developed. When the static development of the wafer W is performed for a predetermined time, the rinsing liquid supply nozzle 100 is moved above the center of the wafer W by the second arm 72 and the side wall 63 of the cup 62 is raised. Thereafter, the wafer W is rotated by the spin chuck 60, and the rinse liquid is supplied from the rinse liquid supply nozzle 100 to the wafer W. As a result, the developing solution on the wafer W is replaced with the rinsing solution, the development of the wafer W is stopped, and the wafer W is cleaned. After the rinse liquid is supplied for a predetermined time, the supply of the rinse liquid is stopped, and the rinse liquid supply nozzle 100 is returned to the cleaning tank 120. The wafer W is subsequently rotated and dried.

  After the wafer W is dried for a predetermined time, the rotation of the wafer W is stopped, the wafer W is transferred from the spin chuck 60 to the main transfer device 13, and the wafer W is unloaded from the development processing device 18. Thus, a series of development processing of the wafer W is completed.

  According to the above embodiment, the processing liquid removing member 101 made of a hydrophilic material is provided in the development processing apparatus 18 so that the processing liquid removing member 101 can come into contact with the liquid film on the wafer W. Therefore, at the time of supplying the developing solution, it is possible to remove a part of the pure water on the wafer W by bringing the processing liquid removing member 101 into contact with the pure water liquid film P1 already formed. As a result, it is possible to prevent the developer supplied onto the other end of the wafer W from being partially diluted by pure water pushed out to the other end of the wafer W when the developer is supplied. Therefore, the concentration of the developer accumulated on the wafer W becomes uniform within the wafer surface, and uniform development is performed within the wafer surface.

  Since the contact portion 101a of the processing liquid removing member 101 is formed in an arc shape having the same diameter as the wafer W so that it can come into line contact with the pure water on the wafer W, the pure water on the other end side of the wafer W is removed. Can be removed efficiently without spots.

  Since the cleaning tank 120 for the processing liquid removing member 101 is provided in the development processing apparatus 18, the processing liquid removing member 101 can be cleaned every time liquid such as pure water or developing solution adheres. It is possible to prevent the liquid adhering to the liquid from causing particles.

  In the above embodiment, the processing liquid removing member 101 is attached to the same second arm 72 as the rinsing liquid supply nozzle 100, but it is attached to a dedicated arm of the processing liquid removing member 101 and the cleaning tank 120. And the inside of the cup 62 may be moved.

  Further, the processing liquid removing member 101 may be installed in a predetermined position in the cup 62 in advance. FIG. 14 shows an example of such a case. Between the other end of the wafer W and the side wall 63 in the cup 62, a cleaning tank 151 for storing and cleaning the processing liquid removing member 150 is disposed. ing. As shown in FIG. 15, the cleaning tank 151 is formed in a substantially rectangular parallelepiped shape whose outer shape is long in the X direction, and an inlet / outlet 152 for the processing liquid removing member 150 to enter and exit is formed on the side surface on the negative side in the Y direction. Yes.

  In the cleaning tank 151, for example, as shown in FIG. 16, a support member 153 that supports the processing liquid removal member 150, and an advance / retreat drive unit 154 that expands and contracts the support member 153 to advance and retract the processing liquid removal member 150 in the Y direction. The cleaning liquid discharge port 155 for discharging the cleaning liquid to the processing liquid removing member 150 in the cleaning tank 151 and the drainage port 156 for discharging the cleaning liquid in the cleaning tank 151 are provided. The cleaning liquid discharge port 155 is formed in, for example, a flow pipe 157 through which the cleaning liquid flows. The flow pipe 157 is disposed, for example, along the inner wall of the cleaning tank 151, and communicates with a cleaning liquid supply device (not shown) outside the development processing device 18. The cleaning liquid supplied from the cleaning liquid supply device flows through the flow pipe 157 in the cleaning tank 151 and is discharged from the cleaning liquid discharge port 155. The drainage port 156 opens, for example, at the bottom of the cleaning tank 151, and the drainage port 156 is connected to a drainage pipe 158 communicating with a drainage unit of a factory (not shown).

  When removing a part of the pure water on the other end of the wafer W, the processing liquid removal member 150 waiting in the cleaning tank 151 advances to the Y direction negative direction side by the advance / retreat drive unit 154, and the entrance / exit It passes through 152 and comes into contact with pure water on the other end of the wafer W. When the removal of pure water is completed, the processing liquid removal member 150 moves backward from the wafer W and is accommodated in the cleaning tank 151 again. The cleaning liquid is discharged from the cleaning liquid discharge port 155 to the processing liquid removing member 150 accommodated in the cleaning tank 151, and dirt such as liquid adhering to the processing liquid removing member 150 is washed away.

  According to this example, since the processing liquid removing member 150 does not move inside and outside the cup 62 as in the above embodiment, for example, the liquid adhering to the processing liquid removing member 150 drips during the movement. It is possible to prevent the development processing apparatus 18 from being contaminated by falling.

  Although the upper surfaces of the processing liquid removing members 101 and 150 in the above embodiment are formed horizontally, they may be inclined so that the Y direction positive direction side, that is, the direction side away from the wafer W is lowered. In this case, pure water that has flowed from the wafer W onto the processing liquid removing member 101 flows in a direction away from the wafer W along the inclination. As a result, the removal of pure water from the wafer W is promoted, and a predetermined amount of pure water can be removed in a short time.

  The processing liquid removal members 101 and 150 described in the above embodiment have a plate shape, but a plurality of processing liquid removal members 160 projecting from the base 161 to the Y direction negative direction side like the processing liquid removal member 160 shown in FIG. A contact bar 162 may be provided. For example, in this case, the plurality of contact bars 162 are formed of a hydrophilic ceramic, for example. Further, for example, a curve obtained by smoothly connecting the tips of the contact portions 162 when viewed from the plane has the same diameter as the wafer W so that the contact rods 162 can simultaneously contact the pure water on the other end of the wafer W. The length of each contact bar 162 is set so as to form an arc. In the development process, each contact rod 162 is brought into contact with pure water on the other end of the wafer W, and pure water is absorbed from each contact rod 162 to obtain pure water on the other end of the wafer W. A part of is removed. The number of contact bars 162 in this example can be arbitrarily selected. Further, the number of contact bars 162 may be one.

  The hydrophilic material of the treatment liquid removing members 101, 150, and 160 described in the above embodiments is ceramics, but other hydrophilic materials such as a porous material may be used. Further, only the contact portions of the treatment liquid removing members 101, 150, and 160 may be formed of a hydrophilic material.

  The processing liquid removing members 101, 150, and 160 described in the above embodiments remove the pure water on the other end of the wafer W using a hydrophilic material. However, the wafer W is sucked by negative pressure. You may remove the pure water on the other end part. For example, as shown in FIG. 18, the processing liquid removing member 170 includes a main body 170a having a hollow inside, and a side surface portion 170b on the Y direction negative direction side of the main body 170a has the same diameter as the wafer W as viewed from above. It is formed in a convex arc shape on the positive direction side. The side surface portion 170b is formed with a suction port 170c as a slit-like suction portion communicating with the inside of the main body 170a. The suction port 170c is formed so as to conform to the outer shape of the wafer W along the side surface portion 170b curved in an arc shape. A suction pipe 170d leading to a negative pressure generating means (not shown) is connected to the Y direction positive direction side of the main body 170a.

  When removing a portion of the pure water on the wafer W, first, the suction port 170c of the processing liquid removing member 170 is brought closer to the other end side of the wafer W. Next, suction at a predetermined pressure is started from the suction pipe 170d, and a portion of the pure water on the other end of the wafer W is sucked and removed from the suction port 170c. For example, when a predetermined amount of pure water is removed, suction from the suction pipe 170d is stopped, and removal of pure water is stopped. In such a case, it is easy to control the amount of pure water to be removed by stopping the suction from the suction pipe 170d and controlling the suction pressure. Therefore, it is possible to adjust the concentration of the developer overcoated on the wafer W to be more uniform in the wafer surface.

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, in the above embodiment, pure water is used as the first processing liquid first deposited on the wafer W, and the developer is used as the second processing liquid to be deposited next. The present invention can also be applied to the case where a developer is used as the first processing liquid and pure water is used as the second processing liquid. The present invention can also be applied when a developer is used for both the first and second processing solutions.

  In the above embodiment, the present invention is applied to a development processing apparatus, but the present invention can also be applied to other liquid processing apparatuses, for example, resist coating apparatuses. Further, in the above-described embodiment, the present invention is applied to the development processing apparatus for the wafer W. However, the present invention develops a substrate other than the wafer, for example, an FPD substrate such as an LCD substrate, a glass substrate for a photomask, and the like. It can also be applied to a processing apparatus.

  When processing a liquid film on the substrate by forming a liquid film of the processing liquid on the substrate, the concentration of the processing liquid on the substrate is maintained uniformly within the substrate surface, and the liquid processing within the substrate surface is performed uniformly. Useful.

It is a top view which shows the outline of a structure of the coating development processing system carrying the development processing apparatus concerning this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section which shows the structure of a developing processing apparatus. It is explanatory drawing of the cross section which shows the structure of a developing processing apparatus. It is explanatory drawing of the longitudinal cross-section of a process liquid supply nozzle. It is a perspective view of a process liquid removal member. It is a top view of a washing tank. It is a longitudinal cross-sectional view of a washing tank. It is a side view of the wafer which shows a mode when the liquid film of a pure water is formed. It is a side view of the wafer which shows a mode just before supplying a developing solution. It is a side view of the wafer which shows a mode at the time of pure water removal. It is a side view of the wafer which shows a mode when the liquid film of a developing solution is formed. It is explanatory drawing of the longitudinal cross-section of the image development processing apparatus at the time of providing the washing tank in a cup. It is a perspective view of a washing tank. It is a cross-sectional view of a washing tank. It is a perspective view of the process liquid removal member provided with the contact rod. It is a perspective view of the process liquid removal member provided with the suction port. In the conventional development processing, when the second processing liquid is supplied, the first processing liquid moves to the other end side of the wafer. In the conventional development process, it is explanatory drawing which shows a mode that the spot of a density | concentration is produced in the liquid film of the process liquid of the 2nd time.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Application | coating development processing system 18 Development processing apparatus 72 2nd arm 73 Processing liquid supply nozzle 101 Processing liquid removal member 120 Cleaning tank W Wafer

Claims (20)

A method for processing a substrate by supplying a processing solution to the substrate,
Supplying a first processing liquid on the substrate to form a liquid film of the first processing liquid on the surface of the substrate;
Thereafter, the nozzle for supplying the processing liquid moves the second processing liquid onto the substrate while moving from the one end side to the other end side of the substrate above the substrate on which the liquid film of the first processing liquid is formed. And forming a liquid film of the second processing liquid on the surface of the substrate,
In the step of forming the liquid film of the second processing liquid, the nozzle reaches the upper side of the other end of the substrate and before the second processing liquid is supplied onto the other end, A substrate liquid processing method characterized in that a part of the first processing liquid on the other end is removed from the substrate to make the concentration of the processing liquid in the substrate surface uniform . The removal of the first processing liquid on the other end of the substrate is performed by bringing a hydrophilic processing liquid removing member into contact with the first processing liquid. Substrate liquid processing method. The removal of the first processing liquid on the other end portion of the substrate is performed by bringing a processing liquid removing member that sucks liquid by a negative pressure close to the first processing liquid. 2. A liquid processing method for a substrate according to 1. The removal of the first processing liquid on the other end of the substrate is performed after the nozzle starts supplying the second processing liquid onto the one end of the substrate until it arrives above the other end of the substrate. The substrate liquid processing method according to claim 1, wherein the substrate liquid processing method is performed. The first processing solution is a developer;
5. The substrate liquid processing method according to claim 1, wherein the second processing liquid is pure water. The first treatment liquid is pure water;
The substrate processing method according to claim 1, wherein the second processing solution is a developer. 5. The substrate liquid processing method according to claim 1, wherein each of the first processing liquid and the second processing liquid is a developer. The second processing liquid is supplied to the substrate while moving from the one end side to the other end side of the substrate above the substrate on which the liquid film of the first processing liquid is formed. A nozzle for forming a liquid film of the second processing liquid;
When forming the liquid film of the second processing liquid, before the nozzle reaches above the other end of the substrate and the second processing liquid is supplied onto the other end , A substrate processing liquid, comprising: a processing liquid removing member that removes the first processing liquid on the other end from the substrate and makes the concentration of the processing liquid in the substrate surface uniform. Processing equipment. A moving mechanism for moving the processing liquid removing member to contact the first processing liquid on the other end of the substrate;
9. The liquid processing apparatus for a substrate according to claim 8, wherein at least a contact portion of the processing liquid removing member with the first processing liquid is formed to be hydrophilic. The substrate processing apparatus according to claim 9, wherein the contact portion of the processing liquid removing member is formed in a shape that conforms to an outer shape of the other end portion of the substrate. 11. The substrate according to claim 10, wherein the contact portion of the processing liquid removing member is formed in a circular arc shape having the same diameter as that of the substrate when viewed from above and protruding away from the substrate. Liquid processing equipment. The liquid processing apparatus according to claim 9, wherein the contact portion of the processing liquid removing member is formed in a rod shape protruding toward the other end of the substrate. The said process liquid removal member is provided with the suction part which approaches the 1st process liquid on the edge part of the said board | substrate, and attracts | sucks the said 1st process liquid with a negative pressure, It is characterized by the above-mentioned. Substrate processing equipment. 9. The substrate liquid processing apparatus according to claim 8, wherein the suction portion of the processing liquid removing member is formed in a shape that conforms to the outer shape of the other end side of the substrate. 15. The substrate liquid processing apparatus according to claim 8, further comprising a cleaning mechanism for cleaning the processing liquid removing member. The substrate liquid according to claim 15, wherein the cleaning mechanism includes a cleaning tank that stores the processing liquid removing member, and a cleaning liquid supply unit that supplies the cleaning liquid to the stored processing liquid removing member. Processing equipment. 17. The substrate liquid processing apparatus according to claim 8, wherein the substrate liquid processing apparatus is a development processing apparatus. The first processing solution is a developer;
The substrate processing apparatus according to claim 17, wherein the second processing liquid is pure water. The first treatment liquid is pure water;
The substrate processing apparatus according to claim 17, wherein the second processing liquid is a developer. The substrate processing apparatus according to claim 17, wherein the first processing liquid and the second processing liquid are developers.

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