201110220 六、發明說明： 【發明所屬之技術領域】 本發明是有關在圓形基板的表面塗佈光阻劑膜，將此 光阻劑膜曝光、顯像的塗佈、顯像裝置中，洗淨基板的背 面之技術、及藉由洗淨刷子來洗淨被疏水化處理的基板背 面周緣部之方法。 【先前技術】 對半導體晶圓（以下稱爲晶圓）形成光阻劑圖案的工 程是將曝光裝置連接於塗佈、顯像裝置進行，但隨著圖案 的微細化，基板背面的粒子會影響曝光。亦即，若在基板 的背面有粒子附著，則在將基板吸附於載置台時，基板會 因該粒子而彎曲，曝光時不能對焦。因此，在對基板形成 光阻劑膜，對曝光後的基板進行顯像處理的塗佈、顯像裝 置中，會強力要求將基板的背面保持清淨。 於是，本申請人提案一如專利文獻1所示之洗淨晶圓 背面的洗淨裝置。此洗淨裝置是對被吸附保持於旋轉夾頭 的晶圓背面供給洗淨液’使晶圓旋轉的同時，令洗淨刷子 旋轉（自轉）來洗淨晶圓W的背面者，以含粒子的洗淨液 S不會轉入晶圓W的表面之方式，使晶圓以例如5 0 0 rpm〜 1 00 0 rpm的高速旋轉，令洗淨液可從晶圓W的周緣部飛散 〇 另一方面，爲了對應於更窄的圖案，而檢討一於晶圓 的表面形成液層來進行曝光的液浸曝光法。而且，在液浸 -5- 201110220 曝光時增大晶圓表面的疏水性（撥水性）的手法之一，有 在晶圓表面的光阻劑膜上形成被稱爲保護膜等的撥水性膜 爲人所知。此保護膜是在光阻劑膜的周緣部藉由溶劑除去 而露出晶圓表面的部位也被形成，因此爲了防止保護膜的 剝落，較理想是例如在光阻劑液的塗佈前將晶圓的表面予 以疏水化處理。此疏水化處理是使用HMDS (六甲基二矽 院（Hexamethyldisilazane))氣體，因此該氣體會轉入晶 圓的背面周緣部而連該部位也被疏水化處理。 然而，如圖17所示，若以洗淨刷子30來洗淨被疏水化 處理的晶圓W的背面周緣部，則洗淨液S會藉由疏水化部 分的撥水力而彈起分裂。此現象是特別在使晶圓W以高速 旋轉時顯著，如已述般，若使晶圓以旋轉速度500 rpm〜 1 000 rpm旋轉的狀態下進行洗淨，則在晶圓w的背面與刷 子3 0之間不會有洗淨液S的液膜形成，刷子3 0會直接接觸 於晶圓W的背面。因此，刷子3 0會因摩擦而削去產生削渣 成爲粒子，會有晶圓W的背面被汚染的問題。 [先行技術文献] [專利文獻] [專利文獻1]特開2008-1·7754 1號公報（段落號碼 0043、0044 ) 【發明內容】 (發明所欲解決的課題） -6- 201110220 本發明是有鑑於如此的情事而硏發者，其目的是在於 提供一種在基板形成光阻劑膜，對曝光後的基板進行顯像 處理之塗佈、顯像裝置中，即使在基板的背面周緣部的疏 水性高時，照樣可藉由良好地洗淨基板的背面來抑制曝光 時的不良情形之技術。又，其他的發明目的是在於提供一 種藉由洗淨刷子來洗淨被疏水化處理的基板的背面周緣部 時，抑制洗淨刷子的削去，降低粒子的附著之方法。 (用以解決課題的手段） 本發明之塗佈、顯像裝置的特徵係具備： 光阻劑處理部，其係用以在圓形基板的表面塗佈光阻 劑液來形成光阻劑膜； 周緣膜除去部，其係除去前述基板的表面之周緣部的 光阻劑膜； 疏水化處理部，其係對於塗佈光阻劑液之前或在前述 除去部除去光阻劑膜之後的基板供給疏水化用的流體，至 少對於前述基板的表面之周緣部進行疏水化處理； 背面洗淨部，其係洗淨疏水化處理及光阻劑膜的形成 之後的基板背面；及 顯像處理部，其係對於進行背面的洗淨，且圖案形成 用的曝光之後的基板進行顯像處理， 前述背面洗淨部係具備： 基板保持部’其係將基板保持於水平而使繞著鉛直軸 旋轉； 201110220 洗淨刷子，其係用以一邊自轉一邊洗淨藉由前述基板 保持部來旋轉的基板的背面： 洗淨液供給部，其係於此洗淨刷子的洗淨時對前述基 板的背面供給洗淨液；及 控制部，其係於洗淨前述基板的背面側的至少周緣部 時，以該基板的旋轉數能夠成爲80 rpm以下的方式輸出控 制信號。 基板的旋轉數的下限雖無特別加以限制，但由總處理 能力的觀點來看，是以10 rpm〜80 rpm爲理想。 本發明的具體構成是具備保護膜形成部之構成，其係 於藉由前述疏水化處理部來疏水化處理且藉由前述周緣除 去部來除去光阻劑膜的周緣部之基板的表面，爲了在液浸 曝光時保護光阻劑膜，而形成撥水性的保護膜。 前述洗淨刷子可舉配置於比來自前述洗淨液供給部的 洗淨液的供給位置更靠基板的旋轉方向下游側之構成。 本發明之塗佈、顯像方法的特徵係具備： 在圓形基板的表面塗佈光阻劑液來形成光阻劑膜之工 程； 除去前述基板的表面之周緣部的光阻劑膜之工程； 對於塗佈光阻劑液之前或除去基板的表面之周緣部的 光阻劑膜之後的基板供給疏水化用的流體，至少對於前述 基板的表面之周緣部進行疏水化處理之工程； 洗淨疏水化處理及光阻劑膜的形成之後的基板的背面 之背面洗淨工程：及 -8- 201110220 對於進行背面的洗淨，且圖案形成用的曝光之後的基 板進行顯像處理之工程， 前述背面洗淨工程，係將基板保持於水平而使繞著鉛 直軸旋轉，且一邊對基板的背面供給洗淨液，一邊藉由自 轉的洗淨刷子來洗淨基板的背面之工程，在洗淨前述基板 的背面側的至少周緣部時，以該基板的旋轉數能夠成爲80 rpm以下的方式來設定。 基板的背面洗淨方法的特徵爲： 將其背面被疏水化處理的基板保持於水平而使繞著鉛 直軸旋轉，且一邊對基板的背面供給洗淨液，一邊藉由自 轉的洗淨刷子來洗淨基板的背面，在洗淨前述基板之被疏 水化處理的部位時，以該基板的旋轉數能夠成爲8 〇 rpm以 下的方式設定。 [發明的效果] 若根據本發明，則爲了迴避在基板的背面附著粒子所 發生曝光的不良情形，而在曝光前藉由洗淨液來洗淨基板 的背面時，對基板施以疏水化處理而使基板的背面周緣部 也被疏水化處理時，一邊使基板的旋轉數在80 rpm以下的 低速旋轉，一邊藉由洗淨刷子來洗淨。因此，液膜會被保 持於洗淨刷子與基板之間，可抑制洗淨刷子的削去’所以 粒子的附著會被降低。並且就其他的發明而言，雖基板的 背面洗淨的時機不拘，但因爲一邊使基板的旋轉數在80 rpm以下的低速旋轉，一邊藉由洗淨刷子來洗淨，所以可 -9 - 201110220 良好地洗淨被疏水化的基板的背面。 【實施方式】 本發明的塗佈、顯像裝置的實施形態是具備：載體區 B1、處理區B2及介面區B3，且在處理區B2與介面區B3之 間具備擁有後述的背面洗淨裝置（背面洗淨裝置）之洗淨 區B5。而且，洗淨區B5是經由介面區B3來連接至曝光裝 置B4。載體區B1是構成可從被載置於載置部90上的密閉型 的載體（FOUP) C1由交接臂A1來取出晶圓W，而交接至 隣接的處理區B2，且可藉由交接臂A1來接收在處理區B2 所被處理的處理完成的晶圓W，回到載體C1» 如圖2、圖3所示，處理區B2是具備：在此例是用以進 行顯像處理的區（以下稱爲DEV層）、及用以進行在光阻 劑膜的下層側所形成的反射防止膜的形成處理的區（以下 稱爲BCT層）、及用以進行光阻劑液的塗佈處理的區（以 下稱爲COT層）、及用以進行形成於光阻劑膜的上層側的 保護膜的形成處理的區（以下稱爲TCT層），藉由使各區 域由下依序層疊階層化來構成。 BCT層是具備：用以對晶圓W的表面進行疏水化處理 的疏水化處理部之疏水化處理單元60 (參照圖4 )、及藉 由旋轉塗佈來塗佈用以形成反射防止膜的反射防止膜用的 溶液之液處理單元、及用以進行在液處理單元所被進行的 處理的前處理及後處理之加熱、冷卻系的處理單元群、及 在各單元間進行晶圓W的交接之搬送臂A2。COT層是具備 -10- 201110220 :藉由旋轉塗佈來塗佈用以形成光阻劑膜的光阻劑液之光 阻劑處理部的塗佈單元80 (參照圖5)、及用以進行在此 塗佈單元80所被進行的處理的前處理及後處理之加熱、冷 卻系的處理單元群、及在各單元間進行晶圓W的交接之搬 送臂A3。 TCT層是具備：藉由旋轉塗佈來塗佈用以形成在光阻 劑膜上液浸曝光時保護該光阻劑膜的保護膜的處理液之液 處理單元、及用以進行在此液處理單元所被進行的處理的 前處理及後處理之加熱、冷卻系的處理單元群、及在各單 元間進行晶圓W的交接之搬送臂A4。又，DEV層是具備例 如在一個的DEV層內被層疊二段的顯像處理部之顯像單元 、及在此顯像單元搬送晶圓W的搬送臂A5。而且，在處理 區B2，如圖1及圖2所示，配設有棚架架單元U1、及在棚架 單元U 1的各部彼此間搬送晶圓W之昇降自如的交接臂A6。 另外，在圖1中，Ml是層疊各個加熱部冷卻部等的處理單 元群。 在處理區B2的裡側是經由洗淨區B5及介面區B3來連 接曝光裝置B4。處理區B2與洗淨區B5是經由棚架單元U2 來連接，洗淨區B5與介面區B3是經由設於二個的棚架單元 U3、U4之晶圓W的交接單元來連接。 該等棚架單元U3、U4是洗淨晶圓W的表面之洗淨裝置 、及洗淨晶圓W的背面之背面洗淨裝置1會被複數層疊。 並且，在洗淨區B5，除了棚架單元U3、U4以外，還設有 構成可昇降自如且可繞著鉛直軸旋轉自如且進退自如的移 -11 - 201110220 載臂A8。此移載臂A8是從處理區B2經由棚架單元U3、U4 的交接部來接收進行曝光前的晶圓W，搬送至洗淨裝置或 背面洗淨裝置1，且將洗淨後的晶圓W往棚架單元U3、U4 的交接部搬送，接收從介面區B3搬送之曝光完成的晶圓W ，往棚架單元U3、U4內的交接部搬送。而且，移載臂A8 是具有經由棚架單元U3、U4的交接部在移載臂A7與後述 的梭臂E和DEV層的搬送臂A5之間進行晶圓W的交接之任 務。 在介面區B3設有構成可昇降自如且可繞著鉛直軸旋轉 自如且進退自如的移載臂A7，移載臂A7是用以從洗淨區 B5接收洗淨完成的晶圓W，搬送至曝光裝置B4，且從曝光 裝置B4接收曝光完成的晶圓W，往洗淨區B5交接者。並且 在BCT層與DEV層之間設有專用的搬送手段之梭臂E，其係 用以從設於棚架單元U1的交接單元CPL1 1來直接搬送晶圓 W至設於棚架單元U2的交接單元CPL12。 在此，疏水化處理單元60及塗佈單元80可使用周知者 ’以下簡單敘述有關其構造。如圖4所示，疏水化處理單 元60是從設於處理室61的上面之供給口 62來將使HMDS液 氣化的氣體供給至處理室61內。然後，在載置於處理室61 的加熱板63之晶圓W的上面供給HMDS氣體，使晶圓W的表 面疏水化。另外，此時在晶圓W的背面周緣部也有氣體轉 入，被疏水化處理。處理室61是藉由上蓋64及基底體65所 構成’上蓋64會藉由未圖示的開閉驅動部來上昇，而使能 在加熱板63與搬送臂A2之間進行晶圓W的交接。另外在圖 -12- 201110220 4所示的66是對處理室61內進行排氣的排氣泵，67是HMDS 氣體的供給源。 在塗佈單元80，如圖5所示，一邊使在旋轉夾頭81所 吸附支撐的晶圓W旋轉，一邊從光阻劑液供給噴嘴82供給 光阻劑液，而於晶圓W的表面（反射防止膜4 1的表面）形 成光阻劑膜42。其次，使周緣除去部的邊緣洗淨劑83往晶 圓W的周緣部的上方移動，將溶劑供給至晶圓W的周緣部 ，除去周緣部的反射防止膜41及光阻劑膜43。另外，圖5 所示的84是使旋轉夾頭81旋轉的馬達，85是防止從晶圓W 甩掉的溶液飛散之杯體，86是排除杯體85內的氣體之排氣 口，8 7是排出杯體8 5內的廢液之排泄口，8 8是光阻劑液供 給源，89是溶劑供給源。 如此的塗佈、顯像裝置是被連接至曝光裝置，而構成 光阻劑圖案形成系統。此系統之晶圓W的流程是如其次般 。如圖3所示，首先藉由交接臂A1來將裝載於載體區B1的 載體C1之晶圓W搬送至對應於棚架單元U1的處理區B2的 BCT層之交接單元CPL2。其次，晶圓W會從交接單元CPL2 藉由搬送臂A2來搬送至BCT層內之已述的疏水化處理單元 60，進行疏水化處理，其次在BCT層內之未圖示的液處理 單元形成反射防止膜，而搬送至交接單元CPL3。然後，晶 圓W是往棚架單元U1的緩衝單元BF2—交接臂A6—交接單 元CPL3 —搬送臂A3 —COT層搬送，在已述的塗佈單元80形 成光阻劑膜。 其次’在BCT層內之與圖5所示的塗佈單元80同構成 -13- 201110220 的液處理單元，塗佈反射防止膜用的溶液，而形成反射防 止膜4 1 (參照圖5、1 1 )，晶圓W會被搬送至交接單元 CPL3»然後往交接單元CPL3 — COT層內的搬送臂A3搬送 ，在塗佈單元8 0形成光阻劑膜。光阻劑膜形成後的晶圓W 是經由交接單元BF3—交接臂A6(參照圖1)—交接單元 CPL4來交接至TCT層，在光阻劑膜42上形成保護膜43 (參 照圖1 1 )之後，交接至交接單元TRS4。另外，有時會依光 阻劑膜的種類，而不形成反射防止膜。 形成有光阻劑膜的晶圓W是利用交接臂A6經由交接單 元BF3 ' TRS4來交接至交接單元CPL1 1，利用梭臂E經由棚 架單元U2的交接單元CPL12來往洗淨區B5搬送。另外，圖 3中附上CPL的交接單元是兼具可載置複數片晶圓W的緩衝 單元。 其次，晶圓W會藉由移載臂A8來往棚架單元U3、U4搬 送，藉由洗淨裝置或已述的背面洗淨裝置來洗淨。然後， 洗淨後的晶圓W是經由介面區B3來搬送至曝光裝置B4，而 進行曝光處理。然後，晶圓w會回到處理區B2’而於DEV 層進行顯像處理，藉由搬送臂A5來搬送至棚架單元U1的 交接臂A1的存取範圍的交接台。然後經由交接臂A1來回 到載體C 1。 其次，說明有關在本實施形態的洗淨區B5的棚架單元 U3、U4所被層疊的背面洗淨裝置1°如圖6、圖7所示’背 面洗淨裝置1是形成設置基板保持部的旋轉夾頭10及刷子 單元3的構造，該基板保持部的旋轉夾頭1〇是在大致矩形 -14- 201110220 狀上面開口的基底杯20內’將從移載臂A8(參照圖1)接 收的晶圓W吸附保持於大致水平’該刷子單元3是用以洗 淨晶圓W的背面51。 旋轉夾頭1 〇是經由旋轉軸1 2利用旋轉夾頭馬達1 1來使 旋轉。在旋轉夾頭10及旋轉軸12側方設有昇降銷13，在昇 降銷13的下部設有使昇降銷13昇降的昇降部14。昇降銷13 會昇降而與晶圓W的背面抵接，藉由與移載臂A8的共同作 用，在移載臂A8與旋轉夾頭1〇之間進行晶圓W的交接。 在旋轉夾頭1〇及昇降銷13的周圍設有用以防止被供給 至晶圓W的背面5 1之洗淨液S往內方側（旋轉夾頭1 0側） 進入之護欄21。護欄21是形成從基底杯20的底部朝上方起 立延伸的圓筒形，在此護欄21的內部設置有旋轉夾頭馬達 1 1及昇降部14。 在基底杯20的上方設有上杯22，晶圓W是從上杯22的 上開口部2 3搬入至上杯2 2內，吸附保持於旋轉夾頭1 0。並 且，被吸附保持於旋轉夾頭10的晶圓w是藉由上杯22包覆 其周圍，洗淨時防止洗淨液S飛散至背面洗淨裝置1的外部 。而且，本實施形態是由側方來看時，基底杯20的上部與 上杯22的下部會構成重疊，藉由此基底杯20與上杯22來構 成杯體。 在上杯22內的晶圓W的載置區域的下方側，設有洗淨 液供給部的洗淨液噴嘴1 5、及刷子單元3的洗淨刷子3 0。 洗淨刷子30的材質是例如使用PVA (聚乙烯醇）。洗淨液 噴嘴1 5是經由配管1 7來連接至洗淨液供給源1 6。另外，洗 -15- 201110220 淨噴嘴1 5的位置是如圖7所示設於洗淨刷子3 0的近傍，但 在圖6基於說明方便起見，將洗淨液噴嘴15記載於洗淨刷 子3 0的相反側。刷子單元3是在洗淨晶圓w的背面5 1的洗 淨刷子3 0的下部具備：使洗淨刷子3 0旋轉的刷子馬達3 1、 及連結洗淨刷子3 0與刷子馬達3 1的旋轉軸3 2，洗淨刷子3 0 是藉由刷子馬達31的驅動力來旋轉。並且，刷子馬達31是 被裝載於刷子臂33的一端部。 刷子臂3 3是形成從基底杯2 0的外側朝基底杯2 0內水平 延伸，在基底杯20與上杯22之間的區域延伸至鉛直下方， 然後以不干擾上杯22的下端之方式朝上杯22內大致水平延 伸。而且在位於杯體22內的刷子臂3 3的一端部裝載刷子馬 達31，在位於基底杯20的外側之刷子臂33的另一端部設有 使該刷子臂3 3旋轉的旋轉馬達3 4。然後藉由旋轉馬達3 4的 驅動力來旋轉刷子臂3 3，如圖7所示，使洗淨刷子3 0的位 置移動於晶圓W的邊緣部分52與晶圓W的中央部側之間。 而且，本實施形態的背面洗淨裝置1是在旋轉夾頭馬 達1 1、昇降部1 4、洗淨液供給源1 6、刷子馬達3 1及旋轉馬 達3 4連接控制該等的控制部1 8，以控制部1 8來驅動控制該 等的構件，藉此在該背面洗淨裝置1進行晶圓W的背面5 1 的洗淨。另外，圖6所示的24是用以排出積蓄於基底杯20 內的洗淨液S的廢液之排泄口，25是排除基底杯20內的氣 體之排氣口，2 6是用以防止洗淨液S的廢液流入排氣口之 罩蓋》 其次，說明有關在背面洗淨裝置1洗淨晶圓W的背面 -16- 201110220 51的流程。首先，參照圖8來說明有關在此背面洗淨裝置1 進行洗淨的晶圓W。如圖8 ( a )所示，本實施形態的晶圓 W是在疏水化處理單元60疏水化表面50，在其上形成反射 防止膜4 1，在其上以塗佈單元8 0形成光阻劑膜42。其次， 如圖8(b)所示，藉由塗佈單元80的邊緣洗淨劑83來對晶 圓W的表面50的周緣部供給溶劑，除去周緣部的反射防止 膜42及光阻劑膜43，使表面50露出。然後從光阻劑膜42的 上面在晶圓W的表面50的全面形成保護膜43，在背面洗淨 裝置1洗淨此晶圓W。另外，晶圓W是如已述般進行疏水化 處理時HMDS氣體會被轉入晶圓W的背面51的周緣部52， 在此周緣部52也進行疏水化處理。被進行疏水化處理的周 緣部的寬度（從疏水化部分的內端到晶圓W的外緣爲止的 距離）是例如1 5 mm程度。並且進行疏水化處理的部位的 水的接觸角是30°以上。 在洗淨如此的晶圓W的背面5 1時，首先如圖9所示’ 藉由洗淨區B5的移載臂A8來將液浸曝光前的晶圓W往旋轉 夾頭10的上方搬送，藉由昇降銷I3的上昇，晶圓W會從移 載臂A8離開，移載臂A8後退。此實施形態所示的洗淨裝 置，之後詳細是晶圓W的中心部會在離開圓筒狀的護欄2 1 之狀態下，藉由未圖示之水平、昇降自如的吸附墊來保持 晶圓W，首先晶圓W的該中心部會藉由洗淨刷子3 0來洗淨 。然後，晶圓W會從該吸附墊交接至旋轉夾頭1 〇 ’如圖1 〇 所示般地保持。然後，如圖1 〇所示’從洗淨液噴嘴1 5供給 例如純水的洗淨液S至晶圓W的背面5 1，且藉由旋轉夾頭 -17-201110220 VI. Description of the Invention: [Technical Field] The present invention relates to a method of applying a photoresist film to a surface of a circular substrate, exposing and developing the photoresist film, and developing the image forming apparatus. The technique of cleaning the back surface of the substrate and the method of washing the peripheral edge portion of the back surface of the substrate to be hydrophobized by washing the brush. [Prior Art] The process of forming a photoresist pattern on a semiconductor wafer (hereinafter referred to as a wafer) is to connect an exposure device to a coating and developing device, but as the pattern is miniaturized, particles on the back surface of the substrate may affect exposure. In other words, when particles are adhered to the back surface of the substrate, when the substrate is adsorbed on the mounting table, the substrate is bent by the particles, and the film cannot be focused during exposure. Therefore, in the coating and developing apparatus which forms the photoresist film on the substrate and develops the exposed substrate, it is strongly required to keep the back surface of the substrate clean. Then, the applicant proposes a cleaning device for cleaning the back surface of the wafer as shown in Patent Document 1. In the cleaning device, the cleaning liquid is supplied to the back surface of the wafer held by the rotary chuck to rotate the wafer, and the cleaning brush is rotated (rotated) to wash the back surface of the wafer W to contain particles. The cleaning liquid S does not transfer to the surface of the wafer W, so that the wafer is rotated at a high speed of, for example, 500 rpm to 100 rpm, so that the cleaning liquid can be scattered from the peripheral portion of the wafer W. On the one hand, in order to correspond to a narrower pattern, a liquid immersion exposure method in which a liquid layer is formed on the surface of the wafer to perform exposure is reviewed. Moreover, one of the methods for increasing the hydrophobicity (water repellency) of the surface of the wafer during the immersion-5-201110220 exposure is to form a water-repellent film called a protective film on the photoresist film on the surface of the wafer. Known. Since the protective film is also formed at a portion where the peripheral portion of the photoresist film is removed by solvent removal to expose the surface of the wafer, it is preferable to form the crystal before coating of the photoresist liquid, for example, in order to prevent peeling of the protective film. The rounded surface is hydrophobized. Since this hydrophobization treatment uses HMDS (Hexamethyldisilazane) gas, the gas is transferred to the peripheral portion of the back surface of the crystal, and the portion is also hydrophobized. However, as shown in Fig. 17, when the cleaning brush 30 cleans the peripheral edge portion of the back surface of the hydrophobized wafer W, the cleaning liquid S is bounced by the water-repellent force of the hydrophobized portion. This phenomenon is remarkable especially when the wafer W is rotated at a high speed. As described above, if the wafer is washed in a state where the wafer is rotated at a rotation speed of 500 rpm to 1 000 rpm, the back surface of the wafer w and the brush are used. There is no liquid film formation of the cleaning liquid S between 30 and 30, and the brush 30 directly contacts the back surface of the wafer W. Therefore, the brush 30 is scraped off by friction to cause slag to become particles, and the back surface of the wafer W is contaminated. [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] JP-A-2008-1.7754 (paragraph No. 0043, 0044) [Summary of the Invention] (Problems to be Solved by the Invention) -6- 201110220 The present invention is In view of such a situation, the object of the present invention is to provide a coating and developing apparatus for forming a photoresist film on a substrate and performing development processing on the exposed substrate, even in the peripheral portion of the back surface of the substrate. When the hydrophobicity is high, the technique of suppressing the problem at the time of exposure can be suppressed by washing the back surface of the substrate well. Further, another object of the invention is to provide a method for suppressing the removal of the cleaning brush and reducing the adhesion of the particles when the peripheral edge portion of the back surface of the substrate to be hydrophobized is washed by a cleaning brush. (Means for Solving the Problem) The coating and developing device of the present invention is characterized in that the photoresist processing unit is configured to apply a photoresist liquid on the surface of a circular substrate to form a photoresist film. a peripheral film removing portion which is a photoresist film which removes a peripheral portion of the surface of the substrate; and a hydrophobized portion which is a substrate after the photoresist solution is applied or after the photoresist film is removed in the removing portion The fluid for hydrophobization is hydrophobized at least on the peripheral portion of the surface of the substrate, and the back surface cleaning portion is a back surface of the substrate after the hydrophobization treatment and the formation of the photoresist film; and the development processing portion The substrate is subjected to a development process for the back surface, and the substrate after the exposure for pattern formation is subjected to development processing. The back surface cleaning portion includes a substrate holding portion that holds the substrate horizontally and rotates around the vertical axis. 201110220 A cleaning brush for washing the back surface of the substrate rotated by the substrate holding portion while rotating; the cleaning liquid supply portion is used when the cleaning brush is cleaned Supplying cleaning liquid back surface of said base plate; and a control unit, which is based at least when cleaning the peripheral edge portion of the back surface side of the substrate, the number of rotation of the substrate can be 80 rpm or less manner the output control signal. Although the lower limit of the number of rotations of the substrate is not particularly limited, it is preferably 10 rpm to 80 rpm from the viewpoint of total processing ability. A specific configuration of the present invention is a configuration including a protective film forming portion which is obtained by hydrophobizing the hydrophobized portion and removing the surface of the substrate at the peripheral portion of the photoresist film by the peripheral removing portion. The photoresist film is protected during immersion exposure to form a water-repellent protective film. The cleaning brush is disposed on the downstream side in the rotation direction of the substrate from the supply position of the cleaning liquid from the cleaning liquid supply unit. The coating and development method of the present invention is characterized in that: a process of applying a photoresist liquid to a surface of a circular substrate to form a photoresist film; and a process of removing a photoresist film on a peripheral portion of the surface of the substrate The fluid for hydrophobizing is supplied to the substrate after the photoresist film is applied before or after the photoresist liquid is removed, and at least the peripheral portion of the surface of the substrate is subjected to a hydrophobic treatment; The back surface cleaning process of the back surface of the substrate after the hydrophobization treatment and the formation of the photoresist film: and -8-201110220, the process of performing the development process on the substrate after the exposure for the pattern formation and the exposure after the pattern formation, In the back surface cleaning process, the substrate is held horizontally and rotated around the vertical axis, and the cleaning liquid is supplied to the back surface of the substrate, and the back surface of the substrate is cleaned by a washing brush for rotation. When at least the peripheral edge portion of the back surface side of the substrate is set, the number of rotations of the substrate can be set to 80 rpm or less. The back surface cleaning method of the substrate is characterized in that the substrate whose surface is hydrophobized on the back surface is held horizontally and rotated around the vertical axis, and the washing liquid is supplied to the back surface of the substrate while being washed by a self-rotating cleaning brush. When the back surface of the substrate is washed and the portion to be hydrophobized of the substrate is washed, the number of rotations of the substrate can be set to be 8 rpm or less. Advantageous Effects of Invention According to the present invention, in order to avoid the problem of exposure caused by adhesion of particles to the back surface of the substrate, the substrate is subjected to hydrophobic treatment by washing the back surface of the substrate with a cleaning liquid before exposure. When the peripheral edge portion of the back surface of the substrate is also subjected to the hydrophobization treatment, the number of rotations of the substrate is rotated at a low speed of 80 rpm or less, and the brush is washed by a cleaning brush. Therefore, the liquid film is held between the cleaning brush and the substrate, and the removal of the cleaning brush can be suppressed. Therefore, the adhesion of the particles is lowered. In addition, in other inventions, the timing of washing the back surface of the substrate is not limited, but since the number of rotations of the substrate is rotated at a low speed of 80 rpm or less, the brush is washed by the cleaning brush, so that it can be -9 - 201110220 The back surface of the hydrophobized substrate is well washed. [Embodiment] The embodiment of the coating and developing device of the present invention includes a carrier region B1, a processing region B2, and an interface region B3, and has a backside cleaning device to be described later between the processing region B2 and the interface region B3. Washing zone B5 (back washing device). Further, the cleaning area B5 is connected to the exposure unit B4 via the interface area B3. The carrier region B1 is configured to take out the wafer W from the transfer arm A1 from the sealed carrier (FOUP) C1 placed on the mounting portion 90, and transfer it to the adjacent processing region B2, and can be transferred by the transfer arm A1 receives the processed wafer W processed in the processing area B2, and returns to the carrier C1». As shown in FIG. 2 and FIG. 3, the processing area B2 is provided with: in this example, a region for performing development processing. (hereinafter referred to as DEV layer), and a region for performing formation processing of an anti-reflection film formed on the lower layer side of the photoresist film (hereinafter referred to as BCT layer), and for coating a photoresist liquid a treated region (hereinafter referred to as a COT layer) and a region (hereinafter referred to as a TCT layer) for forming a protective film formed on the upper layer side of the photoresist film, by sequentially laminating the regions from below It is composed of stratification. The BCT layer is provided with a hydrophobization treatment unit 60 (see FIG. 4) for hydrophobization treatment of the surface of the wafer W, and a coating for forming an anti-reflection film by spin coating. a liquid processing unit for a solution for an anti-reflection film, and a heating and cooling processing unit group for performing pre-treatment and post-treatment of the processing performed in the liquid processing unit, and performing wafer W between the units Transfer the transfer arm A2. The COT layer is provided with a coating unit 80 (see FIG. 5) of -10-201110220: a photoresist processing portion for applying a photoresist liquid for forming a photoresist film by spin coating, and for performing The pre-treatment and post-treatment heating of the coating unit 80, the processing unit group of the cooling system, and the transfer arm A3 for transferring the wafer W between the units. The TCT layer includes a liquid processing unit that applies a treatment liquid for forming a protective film for protecting the photoresist film during immersion exposure on a photoresist film by spin coating, and a liquid processing unit for performing the liquid The pre-processing and post-processing heating of the processing performed by the processing unit, the processing unit group of the cooling system, and the transfer arm A4 that transfers the wafer W between the units. Further, the DEV layer is a development unit having, for example, a development processing unit in which two stages are stacked in one DEV layer, and a transfer arm A5 in which the developing unit transports the wafer W. Further, in the processing area B2, as shown in Figs. 1 and 2, a scaffolding unit U1 and a transfer arm A6 for elevating and lowering the wafer W between the respective units of the scaffolding unit U1 are disposed. In addition, in Fig. 1, M1 is a processing unit group in which each heating unit cooling unit or the like is stacked. On the back side of the processing area B2, the exposure device B4 is connected via the cleaning area B5 and the interface area B3. The processing area B2 and the cleaning area B5 are connected via the scaffolding unit U2, and the cleaning area B5 and the interface area B3 are connected via the delivery unit of the wafer W provided on the two scaffolding units U3 and U4. The scaffolding units U3 and U4 are a cleaning device for cleaning the surface of the wafer W, and a back surface cleaning device 1 for cleaning the back surface of the wafer W is stacked in plural. Further, in the washing area B5, in addition to the scaffolding units U3 and U4, there is provided a shifting arm -11 - 201110220, which is configured to be movable up and down and freely rotatable around the vertical axis. The transfer arm A8 receives the wafer W before exposure from the processing area B2 via the delivery unit of the rack units U3 and U4, and transports it to the cleaning device or the back surface cleaning device 1, and cleans the wafer. The W is transported to the delivery unit of the scaffolding units U3 and U4, and receives the exposed wafer W transported from the interface area B3, and transports it to the delivery unit in the scaffolding units U3 and U4. Further, the transfer arm A8 has a task of transferring the wafer W between the transfer arm A7 and the transfer arm E5 to be described later and the transfer arm A5 of the DEV layer via the transfer portions of the rack units U3 and U4. The interface area B3 is provided with a transfer arm A7 which is freely movable and rotatable about the vertical axis and which is freely retractable. The transfer arm A7 is for receiving the cleaned wafer W from the cleaning area B5, and transports it to the wafer W. The exposure device B4 receives the exposed wafer W from the exposure device B4 and hands it over to the cleaning area B5. And a shuttle arm E having a dedicated transport means between the BCT layer and the DEV layer for directly transporting the wafer W from the delivery unit CPL1 1 provided in the scaffolding unit U1 to the scaffolding unit U2. Transfer unit CPL12. Here, the hydrophobization processing unit 60 and the coating unit 80 can be described in a simple manner using the following. As shown in Fig. 4, the hydrophobization processing unit 60 supplies a gas for vaporizing the HMDS into the processing chamber 61 from a supply port 62 provided on the upper surface of the processing chamber 61. Then, HMDS gas is supplied onto the upper surface of the wafer W placed on the heating plate 63 of the processing chamber 61 to hydrophobize the surface of the wafer W. Further, at this time, gas is also transferred to the peripheral edge portion of the back surface of the wafer W, and is hydrophobized. The processing chamber 61 is formed by the upper cover 64 and the base body 65. The upper cover 64 is raised by an opening/closing drive unit (not shown), and the wafer W can be transferred between the heating plate 63 and the transfer arm A2. Further, 66 shown in Fig. -12 - 201110220 4 is an exhaust pump for exhausting the inside of the processing chamber 61, and 67 is a supply source of HMDS gas. As shown in FIG. 5, the coating unit 80 supplies the photoresist liquid from the photoresist liquid supply nozzle 82 while rotating the wafer W adsorbed and supported by the rotary chuck 81, and is on the surface of the wafer W. (The surface of the anti-reflection film 41) forms the photoresist film 42. Then, the edge cleaning agent 83 of the peripheral edge removing portion is moved over the peripheral portion of the wafer W, and the solvent is supplied to the peripheral edge portion of the wafer W, and the antireflection film 41 and the photoresist film 43 of the peripheral portion are removed. Further, 84 shown in Fig. 5 is a motor for rotating the rotary chuck 81, 85 is a cup for preventing the solution from being scattered from the wafer W, and 86 is an exhaust port for excluding the gas in the cup 85, 8 7 It is an excretion port for discharging waste liquid in the cup body 85, 8 is a photoresist liquid supply source, and 89 is a solvent supply source. Such a coating and developing device is connected to an exposure device to constitute a photoresist pattern forming system. The flow of wafer W of this system is as follows. As shown in Fig. 3, the wafer W of the carrier C1 loaded in the carrier region B1 is first transferred to the delivery unit CPL2 of the BCT layer corresponding to the processing region B2 of the rack unit U1 by the delivery arm A1. Next, the wafer W is transferred from the delivery unit CPL2 to the hydrophobic treatment unit 60 described in the BCT layer by the transfer arm A2, and is hydrophobized, and then formed by a liquid processing unit (not shown) in the BCT layer. The anti-reflection film is transported to the delivery unit CPL3. Then, the wafer W is transferred to the buffer unit BF2 - the delivery arm A6 - the delivery unit CPL3 - the transfer arm A3 - the COT layer of the scaffolding unit U1, and a photoresist film is formed in the coating unit 80 described above. Next, the liquid processing unit of the -13 to 201110220 is formed in the BCT layer together with the coating unit 80 shown in Fig. 5, and the solution for the anti-reflection film is applied to form the anti-reflection film 4 1 (refer to Figs. 5 and 1). 1), the wafer W is transported to the delivery unit CPL3» and then transported to the transfer arm A3 in the transfer unit CPL3 - COT layer, and a photoresist film is formed in the coating unit 80. The wafer W after the photoresist film formation is transferred to the TCT layer via the transfer unit BF3 - the transfer arm A6 (see FIG. 1) - the transfer unit CPL4, and the protective film 43 is formed on the photoresist film 42 (refer to FIG. After that, it is handed over to the handover unit TRS4. Further, depending on the type of the photoresist film, the anti-reflection film may not be formed. The wafer W on which the photoresist film is formed is transferred to the delivery unit CPL1 via the delivery unit A6 via the delivery unit BF3' TRS4, and is transported to the cleaning area B5 via the delivery unit CPL12 of the gantry unit U2 by the shuttle arm E. Further, the transfer unit to which the CPL is attached in Fig. 3 is a buffer unit that can mount a plurality of wafers W. Next, the wafer W is transported to the scaffolding units U3, U4 by the transfer arm A8, and is cleaned by a cleaning device or a backside cleaning device as described above. Then, the cleaned wafer W is transported to the exposure device B4 via the interface area B3, and exposure processing is performed. Then, the wafer w is returned to the processing area B2' and developed in the DEV layer, and is transported to the transfer table of the access range of the delivery arm A1 of the scaffolding unit U1 by the transfer arm A5. Then, it is returned to the carrier C 1 via the transfer arm A1. Next, the back surface cleaning apparatus 1 in which the scaffolding units U3 and U4 of the cleaning area B5 of the present embodiment are stacked will be described. As shown in FIGS. 6 and 7, the back surface cleaning apparatus 1 is provided with the substrate holding unit. The structure of the rotary chuck 10 and the brush unit 3, the rotary chuck 1 of the substrate holding portion is in the base cup 20 which is open on the substantially rectangular shape of the -14, 2011,102,20' from the transfer arm A8 (refer to FIG. 1) The received wafer W is adsorbed and held at a substantially horizontal level. The brush unit 3 is a back surface 51 for cleaning the wafer W. The rotary chuck 1 is rotated by the rotary chuck motor 1 1 via the rotary shaft 12. A lift pin 13 is provided on the side of the rotary chuck 10 and the rotary shaft 12, and a lift portion 14 for raising and lowering the lift pin 13 is provided at a lower portion of the lift pin 13. The lift pins 13 are lifted and lowered to abut against the back surface of the wafer W, and the wafer W is transferred between the transfer arm A8 and the rotary chuck 1A by the cooperation with the transfer arm A8. A guard rail 21 for preventing the cleaning liquid S supplied to the back surface 51 of the wafer W from entering the inner side (the rotary chuck 10 side) is provided around the rotary chuck 1 and the lift pin 13. The guard rail 21 is formed in a cylindrical shape extending upward from the bottom of the base cup 20. The inside of the guard rail 21 is provided with a rotary chuck motor 1 1 and a lifting portion 14. An upper cup 22 is provided above the base cup 20. The wafer W is carried into the upper cup 2 2 from the upper opening portion 2 of the upper cup 22, and is adsorbed and held by the rotary chuck 10. Further, the wafer w adsorbed and held by the spin chuck 10 is covered by the upper cup 22, and the cleaning liquid S is prevented from scattering to the outside of the back surface cleaning apparatus 1 during washing. Further, in the present embodiment, when viewed from the side, the upper portion of the base cup 20 and the lower portion of the upper cup 22 are overlapped, whereby the base cup 20 and the upper cup 22 constitute the cup. A cleaning liquid nozzle 15 of the cleaning liquid supply unit and a cleaning brush 30 of the brush unit 3 are provided below the mounting area of the wafer W in the upper cup 22. The material of the washing brush 30 is, for example, PVA (polyvinyl alcohol). The cleaning liquid nozzle 15 is connected to the cleaning liquid supply source 16 via a pipe 17. In addition, the position of the washing nozzle -15-201110220 net nozzle 15 is provided in the vicinity of the washing brush 30 as shown in Fig. 7, but in Fig. 6, the washing liquid nozzle 15 is described in the washing brush for convenience of explanation. The opposite side of 30. The brush unit 3 is provided with a brush motor 3 1 that rotates the cleaning brush 30 and a brush motor 30 and a brush motor 3 1 at a lower portion of the cleaning brush 30 on the back surface 51 of the cleaning wafer w. The rotating shaft 3 2 and the washing brush 30 are rotated by the driving force of the brush motor 31. Further, the brush motor 31 is attached to one end portion of the brush arm 33. The brush arm 3 3 is formed to extend horizontally from the outer side of the base cup 20 toward the base cup 20, and the area between the base cup 20 and the upper cup 22 extends vertically downward, and then does not interfere with the lower end of the upper cup 22. The upper cup 22 extends substantially horizontally. Further, a brush motor 31 is mounted on one end portion of the brush arm 33 located in the cup body 22, and a rotary motor 34 for rotating the brush arm 33 is provided at the other end portion of the brush arm 33 located outside the base cup 20. Then, the brush arm 3 3 is rotated by the driving force of the rotary motor 34, and as shown in Fig. 7, the position of the cleaning brush 30 is moved between the edge portion 52 of the wafer W and the central portion side of the wafer W. . Further, the back surface cleaning device 1 of the present embodiment is connected to the control unit 1 in which the rotary chuck motor 1 1 , the elevation unit 14 , the cleaning liquid supply source 16 , the brush motor 31 , and the rotary motor 34 are connected and controlled. 8. The control unit 18 drives and controls the members, whereby the back surface cleaning device 1 cleans the back surface 5 1 of the wafer W. Further, 24 shown in Fig. 6 is an exhaust port for discharging the waste liquid accumulated in the cleaning liquid S in the base cup 20, and 25 is an exhaust port for removing the gas in the base cup 20, and 26 is for preventing The cover of the waste liquid of the cleaning liquid S flows into the exhaust port. Next, the flow of the back surface-16-201110220 51 of the wafer W to be cleaned by the back surface cleaning apparatus 1 will be described. First, the wafer W to be cleaned by the back surface cleaning apparatus 1 will be described with reference to FIG. As shown in FIG. 8( a ), the wafer W of the present embodiment is a hydrophobized surface 50 of the hydrophobization treatment unit 60, on which an anti-reflection film 411 is formed, and a photoresist is formed thereon by the coating unit 80. Film 42. Next, as shown in FIG. 8(b), a solvent is supplied to the peripheral edge portion of the surface 50 of the wafer W by the edge cleaning agent 83 of the coating unit 80, and the anti-reflection film 42 and the photoresist film of the peripheral portion are removed. 43, the surface 50 is exposed. Then, a protective film 43 is formed on the entire surface 50 of the wafer W from the upper surface of the photoresist film 42, and the wafer W is washed by the back surface cleaning device 1. Further, when the wafer W is subjected to the hydrophobization treatment as described above, the HMDS gas is transferred to the peripheral edge portion 52 of the back surface 51 of the wafer W, and the peripheral portion 52 is also subjected to the hydrophobization treatment. The width of the peripheral portion to be hydrophobized (the distance from the inner end of the hydrophobized portion to the outer edge of the wafer W) is, for example, about 15 mm. Further, the contact angle of water in the portion subjected to the hydrophobization treatment is 30 or more. When the back surface 51 of the wafer W is washed, first, as shown in FIG. 9, the wafer W before the liquid immersion exposure is transferred to the upper side of the rotary chuck 10 by the transfer arm A8 of the cleaning area B5. By the rise of the lift pin I3, the wafer W is separated from the transfer arm A8, and the transfer arm A8 is retracted. In the cleaning apparatus shown in this embodiment, in detail, in the state where the center portion of the wafer W is separated from the cylindrical barrier 2 1 , the wafer is held by a horizontally and vertically movable adsorption pad (not shown). W, first, the center portion of the wafer W is washed by the cleaning brush 30. Then, the wafer W is transferred from the adsorption pad to the rotary chuck 1 〇 ' as shown in Fig. 1 。. Then, as shown in Fig. 1, a cleaning liquid S such as pure water is supplied from the cleaning liquid nozzle 15 to the back surface 5 of the wafer W, and by rotating the chuck -17-
I 201110220 10來使晶圓w以80 rpm以下，例如5〇 rpm的速度旋轉，一 邊使洗淨刷子30以例如100 rpm旋轉，一邊開始晶圓W的背 面5 1的洗淨。圖1 1是由背面來看晶圓W的圖，洗淨刷子3 0 相對於洗淨液噴嘴1 5之洗淨液S的供給位置，是位於晶圓 W的旋轉方向的下游側。因此，被供給（吐出）至晶圓W 的背面側之洗淨液S是在晶圓W的背面一邊流動於晶圓W的 旋轉方向，一邊藉由離心力來擴展至外側，流入洗淨刷子 30所位置的區域。洗淨刷子30是藉由臂33 —邊橫向移動， —邊均勻地洗淨護欄21的外側區域之晶圓W的背面。 由後述的實驗結果可知，被疏水化處理的晶圓W的背 面周緣部也是洗淨後的粒子的附著少，因此洗淨的狀態可 如其次般推定。亦即，一旦洗淨液S到達被疏水化處理的 部位，則大的表面張力會作用，液流快時容易形成水滴狀 。相對的，晶圓W的旋轉數極端地慢時，因爲液流慢，所 以不易形成水滴狀，因此如圖12所示，安定的液膜可介於 洗淨刷子3 0與晶圓W的背面之間，所以可抑制洗淨刷子3 0 與晶圓W的削去，可想像粒子的發生會被降低。爲了取得 如此的作用，從後述的實驗例也可知，晶圓W的旋轉數是 比200 rpm程度更低，較理想是比1〇〇 rpm更低爲條件，但 若加重迴避洗淨液往晶圓W的表面側轉入之條件，必須爲 80 rpm以下。並且只要晶圓W旋轉，便可洗淨晶圓w的背 面的周緣部全體’而且可使粒子的發生降低，因此有關晶 圓W的旋轉數的下限是比0 rpm更大，亦即只要晶圓W旋轉 即可。然而’必須避免塗佈、顯像裝置的全體總處理能力 -18- 201110220 因爲該晶圓的背面洗淨工程而降低，基於此點，晶圓W的 旋轉數是比1 〇 rpm更大爲理想。亦即，本發明是晶圓W的 旋轉數的上限重要，有關下限則是只要背面洗淨的機能被 發揮的範圍即可。 然後，洗淨終了的晶圓W是以和將晶圓W搬入背面洗 淨裝置1的工程相反的程序來交接至移載臂A8，藉由移載 臂A8來從背面洗淨裝置1搬出。藉此完成晶圓W的背面51 的洗淨，以後對於其他未洗淨的晶圓W重複上述工程。 另外，就此例而言，洗淨液噴嘴15是設於靠晶圓W的 中央，但亦可例如從晶圓W的中心部附近到周緣部沿著晶 圓半径延伸的橫長噴嘴。 洗淨刷子30的旋轉數是100 rpm，若爲太高的旋轉數 ，則洗淨液容易形成水滴狀，相反的，若爲太低的旋轉數 ，則洗淨能力會變小，因此較理想是50 rpm〜3 00 rpm。 又，晶圓W的旋轉數是只在洗淨被疏水化處理的晶圓W的 背面周緣部時設定於80 rpm以下例如50 rpm，有關除此以 外的部位則是可設定成更高的旋轉數，或者針對被疏水化 處理的部位及未被疏水化處理的部位皆是如上述般設定成 低速。 若根據上述的實施形態，則藉由洗淨液來洗淨晶圓W 的背面時，對晶圓W施以疏水化處理來使晶圓W的背面周 緣部也被疏水化處理時，一邊使晶圓W的旋轉數在80 rpm 以下的低速旋轉，一邊藉由洗淨刷子30來洗淨。因此，液 膜會被保持於洗淨刷子30與晶圓W之間，可抑制洗淨刷子 -19- 201110220 30的削去，且洗淨液往晶圓W的表面側的轉入也會被抑制 ，晶圓W的背面的粒子附著會被降低，且晶圓W的表面周 緣部的汚染也會被抑制。因此將晶圓W疏水化處理來防止 已述的保護膜的剝落，且晶圓W的背面周緣部被疏水化也 可良好地洗淨，可降低粒子的附著。因此在曝光時因粒子 的存在而使晶圓w彎曲（雖是micro level)的情況會被抑 制，可進行良好的曝光。 [實施例] 以下，參照圖13〜圖14來說明有關爲了確認本發明的 效果而進行的實驗。本實驗是調查使用本實施形態的背面 洗淨裝置1，洗淨背面51的周緣部52被疏水化處理的晶圓 W時的背面51所附著的粒子的量。此實驗是在使洗淨刷子 3 0以100 rpm旋轉的狀態下，將晶圓W的旋轉數從50 rpm變 更至1 000 rpm，調查以各旋轉數洗淨時的晶圓W的背面51 所附著的粒子的量。另外，粒子的量是以粒子計數器來計 數洗淨後的晶圓W的背面5 1之個數。 說明有關上述實驗結果。圖13是縱軸取粒子的量（個 )，橫軸取晶圓W的旋轉數（rpm )之圖表。圖14是表示 使晶圓W以50 rpm旋轉洗淨時的背面51的狀態。圖15是表 示使晶圓W以500 rpm旋轉洗淨時的背面51的狀態。如圖1 3 及圖14所示，在使晶圓W以50 rpm旋轉洗淨背面51時，附 著於背面51的粒子的量是344個，可知粒子未被全體地除 去。 -20- 201110220 相對的，在使晶圓w以500 rpm旋轉洗淨背面51時’如 圖1 2所示，附著於背面5 1的粒子的量是3 6 8 8個’形成以5 0 rpm洗淨時的1〇倍以上。而且，如圖15所示’可知在晶圓 W的背面51，粒子大量附著於周緣部。由此可知’在以 5 00 rpm來使晶圓W旋轉而進行洗淨時，如圖17及圖18所示 ，在周緣部52未形成有洗淨液S的液膜，洗淨刷子30與晶 圓W會直接接觸，而洗淨刷子3 0會被削去，削渣會成爲粒 子而附著。 更如圖13所示，在使晶圓W以1000 rpm旋轉來洗淨背 面51時，粒子的量爲2209 1個，形成以50 rpm來洗淨時的 約70倍，由此也可想像旋轉速度越快，洗淨刷子30的削去 量越會増加，該部分粒子的量會増加。因此，當周緣部52 被疏水化處理時，可知降低晶圓W的旋轉數來進行洗淨較 有利。 另外，如圖13所示，使晶圓W以100 rpm〜400 rpm旋 轉來洗淨背面51時，粒子的量爲449個〜121 8個較少。然 而在以100 rpm〜400 rpm來使晶圓W旋轉時，被供給至背 面5 1的洗淨液S會往晶圓W的表面5 0轉入，發生粒子附著 於晶圓W的表面50之現象，因此不適於晶圓W的洗淨。 【圖式簡單說明】 圖1是表示塗佈 '顯像裝置的全體平面圖。 圖2是表示塗佈、顯像裝置的全體立體圖。 圖3是表示塗佈、顯像裝置的全體剖面圖。 -21 - 201110220 圖4是疏水化處理單元的縱剖側面圖。 圖5是塗佈單元的剖面圖。 圖6是背面洗淨裝置的剖面圖。 圖7是背面洗淨裝置的平面圖。 圖8是用以說明有關以背面洗淨裝置來洗淨的晶圓的 說明圖。 圖9是用以說明有關以背面洗淨裝置來洗淨晶圓的工 程的第1說明圖。 圖10是用以說明有關以背面洗淨裝置來洗淨晶圓的工 程的第2說明圖。 圖11是用以說明有關以背面洗淨裝置來洗淨晶圓的工 程的第3說明圖。 圖1 2是用以說明有關以背面洗淨裝置來洗淨晶圓的X 程的第4說明圖。 圖1 3是用以說明有關本實施形態的背面洗淨裝置的效 果的圖表。 圖14是表示使晶圓以80 rpm來旋轉洗淨時的晶圓的背 面照片。 圖1 5是表示使晶圓以5 00 rpm來旋轉洗淨時的晶圓的 背面照片。 圖16是用以說明有關以往的背面洗淨裝置的第1平面 圖。 圖1 7是用以說明有關以往的背面洗淨裝置的剖面圖。 圖18是用以說明有關以往的背面洗淨裝置的第2平面 -22- 201110220 圖 【主要元件符號說明】 1 :背面洗淨裝置 3 :刷子單元 1 〇 :旋轉夾頭 1 5 :洗淨液噴嘴 1 6 :洗淨液供給源 1 8 :控制部 2 0 :基底杯 21 :護欄 2 2 :上杯 3 0 :刷子 3 2 :旋轉軸 3 3 :刷子臂 41 :反射防止膜 42 :光阻劑膜 43 :保護膜 60 :氣化單元 61 :處理室 62 :供給口 63 :加熱板 67 : HMDS氣體供給源 8 〇 :塗佈裝置 -23 201110220 81 :旋轉夾頭 8 2 :光阻劑液供給噴嘴 8 3 :邊緣洗淨劑 8 5 :杯體 8 8 :光阻劑液供給源 89 :除去液供給源 90 :載置部 W :晶圓I 201110220 10 The wafer w is rotated at a speed of 80 rpm or less, for example, 5 rpm, and the cleaning brush 30 is rotated at, for example, 100 rpm to start the cleaning of the back surface 51 of the wafer W. Fig. 11 is a view of the wafer W viewed from the back side, and the supply position of the cleaning brush 30 to the cleaning liquid S of the cleaning liquid nozzle 15 is located on the downstream side in the rotation direction of the wafer W. Therefore, the cleaning liquid S supplied (discharged) to the back side of the wafer W flows in the rotation direction of the wafer W on the back surface of the wafer W, and is expanded to the outside by centrifugal force, and flows into the cleaning brush 30. The area of the location. The cleaning brush 30 is laterally moved by the arm 33 to uniformly clean the back surface of the wafer W in the outer region of the guard rail 21. As is apparent from the experimental results described later, the peripheral portion of the back surface of the wafer W to be hydrophobized has less adhesion of the particles after washing, and therefore the state of washing can be estimated as follows. That is, once the cleaning liquid S reaches the hydrophobized portion, a large surface tension acts, and a liquid droplet is easily formed when the liquid flow is fast. On the other hand, when the number of rotations of the wafer W is extremely slow, since the liquid flow is slow, it is difficult to form a drop shape. Therefore, as shown in FIG. 12, the stable liquid film can be interposed between the cleaning brush 30 and the wafer W. Therefore, it is possible to suppress the removal of the cleaning brush 30 and the wafer W, and it is conceivable that the occurrence of particles is lowered. In order to achieve such an effect, it is also known from the experimental examples described later that the number of revolutions of the wafer W is lower than 200 rpm, and preferably lower than 1 rpm, but if the cleaning liquid is removed from the crystal The condition for the surface side of the circle W to be transferred must be 80 rpm or less. Further, as long as the wafer W rotates, the entire peripheral portion of the back surface of the wafer w can be cleaned and the occurrence of particles can be reduced. Therefore, the lower limit of the number of rotations of the wafer W is larger than 0 rpm, that is, as long as the crystal The circle W can be rotated. However, 'the total processing capacity of the coating and developing device must be avoided. -18- 201110220 Because the backside cleaning process of the wafer is reduced, based on this, the number of revolutions of the wafer W is larger than 1 〇 rpm. . That is, the present invention is important in that the upper limit of the number of revolutions of the wafer W is important, and the lower limit is a range in which the function of the back surface cleaning is exhibited. Then, the wafer W that has been cleaned is transferred to the transfer arm A8 in a procedure opposite to the process of loading the wafer W into the back surface cleaning apparatus 1, and is carried out from the back surface cleaning apparatus 1 by the transfer arm A8. Thereby, the back surface 51 of the wafer W is cleaned, and the above process is repeated for the other unwashed wafers W. Further, in this example, the cleaning liquid nozzle 15 is provided at the center of the wafer W, but may be, for example, a horizontally long nozzle extending from the vicinity of the center portion of the wafer W to the peripheral portion along the radius of the crystal. The number of rotations of the cleaning brush 30 is 100 rpm. If the number of rotations is too high, the cleaning liquid is likely to form a drop shape. Conversely, if the number of rotations is too low, the cleaning ability is small, which is preferable. It is 50 rpm ~3 00 rpm. In addition, the number of rotations of the wafer W is set to 80 rpm or less, for example, 50 rpm when cleaning the peripheral edge portion of the back surface of the wafer W to be hydrophobized, and other portions can be set to be higher in rotation. The number, or the portion to be hydrophobized and the portion not to be hydrophobized, are set to a low speed as described above. According to the above-described embodiment, when the back surface of the wafer W is washed by the cleaning liquid, the wafer W is hydrophobized so that the peripheral edge portion of the back surface of the wafer W is also hydrophobized. The number of rotations of the wafer W is rotated at a low speed of 80 rpm or less, and is washed by the cleaning brush 30. Therefore, the liquid film is held between the cleaning brush 30 and the wafer W, and the cutting of the cleaning brush -19-201110220 30 can be suppressed, and the transfer of the cleaning liquid to the surface side of the wafer W is also Suppression suppresses the adhesion of particles on the back surface of the wafer W, and contamination of the peripheral portion of the surface of the wafer W is also suppressed. Therefore, the wafer W is hydrophobized to prevent the peeling of the protective film described above, and the peripheral edge portion of the back surface of the wafer W is also hydrophobized and can be well washed, and the adhesion of particles can be reduced. Therefore, when the wafer is bent (during a micro level) due to the presence of particles during exposure, it is suppressed, and good exposure can be performed. [Examples] An experiment conducted to confirm the effects of the present invention will be described below with reference to Figs. 13 to 14 . In the present experiment, the amount of particles adhering to the back surface 51 when the wafer W having the peripheral portion 52 of the back surface 51 is hydrophobized is cleaned by the back surface cleaning apparatus 1 of the present embodiment. In this experiment, the number of revolutions of the wafer W was changed from 50 rpm to 1 000 rpm in a state where the cleaning brush 30 was rotated at 100 rpm, and the back surface 51 of the wafer W when the number of revolutions was washed was examined. The amount of particles attached. Further, the amount of particles is counted by the particle counter as the number of the back surface 5 1 of the wafer W after the cleaning. Explain the results of the above experiments. Fig. 13 is a graph showing the amount of particles on the vertical axis and the number of rotations (rpm) of the wafer W on the horizontal axis. Fig. 14 is a view showing a state of the back surface 51 when the wafer W is washed by rotation at 50 rpm. Fig. 15 is a view showing a state of the back surface 51 when the wafer W is washed by rotation at 500 rpm. As shown in Fig. 13 and Fig. 14, when the wafer W was rotated and washed at 50 rpm, the amount of particles attached to the back surface 51 was 344, and it was found that the particles were not removed as a whole. -20- 201110220 In contrast, when the wafer w is rotated at 500 rpm to wash the back surface 51, as shown in Fig. 12, the amount of particles attached to the back surface 5 1 is 3 6 8 8 'formed at 50 rpm 1〇 or more when washing. Further, as shown in Fig. 15, it is understood that a large amount of particles adhere to the peripheral portion on the back surface 51 of the wafer W. Therefore, when the wafer W is rotated and washed at 500 rpm, as shown in FIGS. 17 and 18, the liquid film of the cleaning liquid S is not formed in the peripheral portion 52, and the cleaning brush 30 and the cleaning brush 30 are The wafer W will be in direct contact, and the cleaning brush 30 will be scraped off, and the slag will become particles and adhere. Further, as shown in Fig. 13, when the wafer W was rotated at 1000 rpm to wash the back surface 51, the amount of particles was 2,209, and the number of particles was about 70 times when washed at 50 rpm, whereby the rotation was also conceivable. The faster the speed, the more the amount of the cleaning brush 30 is removed, and the amount of the particles will increase. Therefore, when the peripheral portion 52 is hydrophobized, it is understood that it is advantageous to reduce the number of rotations of the wafer W to perform cleaning. Further, as shown in Fig. 13, when the wafer W is rotated at 100 rpm to 400 rpm to wash the back surface 51, the amount of particles is 449 to 121 8 less. However, when the wafer W is rotated at 100 rpm to 400 rpm, the cleaning liquid S supplied to the back surface 51 is transferred to the surface 50 of the wafer W, and particles are deposited on the surface 50 of the wafer W. This phenomenon is not suitable for the cleaning of the wafer W. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the entire application of a developing device. Fig. 2 is a perspective view showing the whole of a coating and developing device. Fig. 3 is a cross-sectional view showing the entire coating and developing apparatus. -21 - 201110220 Figure 4 is a longitudinal sectional side view of the hydrophobization treatment unit. Figure 5 is a cross-sectional view of a coating unit. Figure 6 is a cross-sectional view of the backside cleaning apparatus. Fig. 7 is a plan view of the back surface cleaning device. Fig. 8 is an explanatory view for explaining a wafer to be cleaned by a back surface cleaning device. Fig. 9 is a first explanatory view for explaining a process of cleaning a wafer by a back surface cleaning device. Fig. 10 is a second explanatory diagram for explaining a process of cleaning a wafer by a back surface cleaning device. Fig. 11 is a third explanatory diagram for explaining a process of cleaning a wafer by a back surface cleaning device. Fig. 12 is a fourth explanatory diagram for explaining the X process of cleaning the wafer by the back surface cleaning device. Fig. 13 is a graph for explaining the effect of the back surface cleaning apparatus of the present embodiment. Fig. 14 is a photograph showing the back side of the wafer when the wafer is spin-washed at 80 rpm. Fig. 15 is a photograph showing the back side of the wafer when the wafer is rotated and washed at 500 rpm. Fig. 16 is a first plan view for explaining a conventional back surface cleaning device. Fig. 17 is a cross-sectional view for explaining a conventional back surface cleaning device. Fig. 18 is a view showing a second plane -22-201110220 of the conventional back surface cleaning apparatus. [Main element symbol description] 1 : Back surface cleaning device 3: Brush unit 1 〇: Rotating chuck 1 5 : Cleaning liquid Nozzle 1 6 : cleaning liquid supply source 1 8 : control unit 2 0 : base cup 21 : guard rail 2 2 : upper cup 3 0 : brush 3 2 : rotating shaft 3 3 : brush arm 41 : anti-reflection film 42 : photoresist Film 43: protective film 60: gasification unit 61: processing chamber 62: supply port 63: heating plate 67: HMDS gas supply source 8: coating device-23 201110220 81: rotating chuck 8 2: photoresist liquid Supply nozzle 8 3 : edge cleaner 8 5 : cup 8 8 : photoresist liquid supply source 89 : removal liquid supply source 90 : mounting portion W : wafer
Al、A6 :交接臂 A2、A3、A4、A5 :搬送臂 A7、A8 :移載臂 B1 :載體載置區 B 2 :處理區 B 3 ：介面區 B4 :曝光裝置 B 5 :洗淨區 C1 :載體 E :梭臂 S :洗淨液 -24-Al, A6: delivery arm A2, A3, A4, A5: transfer arm A7, A8: transfer arm B1: carrier mounting area B 2: processing area B 3: interface area B4: exposure device B 5: cleaning area C1 : Carrier E: Shuttle Arm S: Washing Fluid-24-