JP2014067910A - Coating film formation device, coating film formation method, coating, developing device, coating, developing method, and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of promptly forming a coating film again even if an error occurs in a device when a coating film is formed on a substrate.SOLUTION: A coating film formation device comprises: a coating liquid supply unit which supplies a coating liquid to a substrate held on a holding unit; an error detection mechanism which detects an error which occurs in a coating film formation device while the substrate is being transferred to a transportation mechanism after the coating liquid is supplied to the substrate held on the holding unit; a solvent supply unit which supplies a solvent for the coating film to the substrate held on the holding unit and removes the coating film from the substrate when an error is detected by the error detection mechanism; and a control unit. The control unit promptly forms the coating film again by outputting a control signal so as to supply the coating liquid again to the substrate from which the coating film was removed and form the coating film.

Description

  The present invention provides a coating film forming apparatus, a coating film forming method, a coating film forming apparatus, a coating and developing apparatus including the coating film forming apparatus, and a coating and developing method including the coating film forming method. And a storage medium storing a program for performing the coating film forming method.

  For example, in a semiconductor device manufacturing process, a coating film is formed by supplying a coating solution such as a resist solution to a semiconductor wafer (hereinafter simply referred to as a wafer) as a substrate. A large number of wafers are sequentially transferred to a coating film forming apparatus that performs such processing and processed.

  When the wafer is transferred and the wafer is processed as described above, a trouble may occur in the coating film forming apparatus, and the processing may be interrupted or abnormal processing may be performed. In such a case, until the apparatus is restored to a normal state, the wafer that was being processed at the time when the trouble occurred waits in the apparatus and is then returned to the carrier in which the wafer was stored.

  Since there is a possibility that a desired coating film is not formed on such a wafer, the wafer is selected from processed wafers, and a process called rework is performed in a processing apparatus different from the coating film forming apparatus. Receive. Rework is a process of supplying a solvent for the coating film to the wafer and removing the coating film formed on the wafer. Patent Document 1 describes such rework. Further, an inspection may be performed after the coating film forming process. By this inspection, wafers that need to be reworked by the processing apparatus are selected. A coating film is formed again on the wafer that has undergone the rework by the coating film forming apparatus.

  However, sorting the wafers to be reworked in this way is time consuming and time consuming, and it is also troublesome to transport the wafers from the coating film forming apparatus to the processing apparatus for rework and return them to the coating film forming apparatus. take time. As a result, the throughput of the wafer may be reduced.

Patent No. 3455458 (Claim 6 etc.)

  The present invention has been made under such circumstances, and its purpose is to promptly perform a coating film forming process again even if an abnormality occurs in the apparatus when the coating film is formed on the substrate. Is to provide technology that can.

The coating film forming apparatus of the present invention is
In a coating film forming apparatus for forming a coating film by supplying a coating liquid to a substrate,
A holding unit for holding the substrate delivered from the outside by a transport mechanism;
A coating solution supply unit for supplying the coating solution to the substrate held by the holding unit;
An abnormality detection mechanism that detects an abnormality that occurs in the coating film forming apparatus after the coating liquid is supplied to the substrate held by the holding unit and before the substrate is delivered to the transport mechanism;
When an abnormality is detected by the abnormality detection mechanism, a solvent supply unit for supplying the solvent of the coating film to the substrate held by the holding unit and removing the coating film from the substrate;
A control unit that controls the supply of the coating liquid from the coating liquid supply unit to the substrate and outputs a control signal so as to form the coating film by supplying the coating liquid again to the substrate from which the coating film has been removed; ,
It is provided with.

In a coating and developing apparatus for forming a resist film on the substrate of the present invention, supplying a developer to the exposed resist film and developing the resist film,
A first coating film forming module and a second coating film forming module, each of which forms a coating film of the same kind of any one of the resist film and a laminated film formed above or below the resist film;
A mounting table for mounting a carrier for storing a plurality of the substrates;
A forward-side transport mechanism that distributes and transports the substrate stored in the carrier to the first coating film forming module and the second coating film forming module;
The substrate processed by the first coating film forming module and the second coating film forming module and further exposed to the substrate is returned to the carrier through the developing module which supplies the developer to the substrate and develops the substrate. A return-side transport mechanism for transporting;
With
The first coating film forming module is a coating film forming apparatus that forms a coating film by supplying a coating liquid to a substrate,
A holding unit for holding the substrate delivered from the outside by a transport mechanism;
A coating solution supply unit for supplying the coating solution to the substrate held by the holding unit;
An abnormality detection mechanism that detects an abnormality occurring in the coating film forming apparatus after the coating liquid is supplied to the substrate held by the holding unit and before the substrate is delivered to the transport mechanism;
A control unit that controls the supply of the coating liquid from the coating liquid supply unit to the substrate and outputs a control signal so as to form the coating film by supplying the coating liquid again to the substrate from which the coating film has been removed; ,
With
When the abnormality is detected in the first coating film forming module by the abnormality detection mechanism, the forward-side transport mechanism is set to follow the previously set transfer to the first coating film forming module. The substrate is transported to a second coating film forming module.

  In the present invention, an abnormality detection mechanism for detecting an abnormality of the apparatus is provided after the coating liquid is supplied and before the substrate is conveyed to the outside. When an abnormality is detected, the solvent of the coating film is applied to the substrate. Is supplied and the coating film is removed, and then the coating liquid is supplied again to form the coating film. As a result, it is possible to save time and labor for selecting a substrate that requires the removal process of the coating film and transporting it to a dedicated apparatus for performing the removal process. Accordingly, the coating film can be quickly re-formed, and the throughput can be improved.

1 is a cross-sectional plan view of a coating and developing apparatus including a resist film forming module according to the present invention. It is a perspective view of the coating and developing apparatus. It is a vertical side view of the coating and developing apparatus. It is a vertical side view of the said resist film formation module. It is the schematic of the pump provided in the said resist film formation module. It is a block diagram of the control part provided in the said application | coating and developing apparatus. It is a schematic flowchart of operation | movement of the said resist film formation module. It is a schematic flowchart of operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is explanatory drawing which shows operation | movement of the said resist film formation module. It is a flowchart which shows the operation | movement of the said resist film formation module, and the conveyance operation of a wafer. It is the schematic which shows conveyance of the wafer at the time of abnormality occurrence of a resist film formation module. It is the schematic which shows conveyance of the wafer at the time of abnormality occurrence of a resist film formation module. It is the schematic which shows conveyance of the wafer at the time of abnormality occurrence of a resist film formation module. It is the schematic which shows conveyance of the wafer at the time of abnormality occurrence of a resist film formation module. It is the schematic which shows conveyance of the wafer at the time of abnormality occurrence of a resist film formation module. It is the schematic which shows the conveyance condition of the wafer at the time of abnormality generating in the said resist film formation module. It is the schematic which shows the conveyance condition of the wafer at the time of abnormality generating in the said resist film formation module. It is a cross-sectional plan view of another coating and developing apparatus. It is a schematic longitudinal side view of the coating and developing apparatus. It is the schematic which shows the conveyance condition of the wafer at the time of abnormality generation | occurrence | production in the protective film formation module in the said coating and developing apparatus. It is the schematic which shows the conveyance condition of the wafer at the time of abnormality generation | occurrence | production in the protective film formation module in the said coating and developing apparatus.

  The coating and developing apparatus 1 incorporating the coating film forming apparatus of the present invention will be described with reference to FIG. 1, FIG. 2, and FIG. 3, which are plan views, perspective views, and schematic longitudinal side views, respectively. The coating / developing apparatus 1 is configured by linearly connecting a carrier block D1, a processing block D2, and an interface block D3. In the following description, the arrangement direction of the blocks D1 to D3 is the front-rear direction. An exposure apparatus D4 is further connected to the interface block D3.

  A carrier C storing a lot of a plurality of wafers W is transferred to the carrier block D1, and the carrier C is provided with slots for storing the wafers W in the vertical direction. The carrier block D <b> 1 includes a mounting table 11 for the carrier C, an opening / closing unit 12, and a transfer mechanism 13 for transferring the wafer W from the carrier C via the opening / closing unit 12. The operation of the transfer mechanism 13 is controlled so that the wafer W processed by the coating and developing apparatus 1 is returned to the slot of the carrier C in which the wafer W is stored. The slot is a slot in which the wafer W was originally stored.

  The processing block D2 is configured by laminating first to sixth unit blocks E1 to E6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, “BCT” is a process for forming a lower antireflection film on the wafer W, “COT” is a process for forming a resist film on the wafer W, and a process for forming a resist pattern on the wafer W after exposure is performed. Sometimes expressed as “DEV”.

  In this example, as shown in FIG. 2, two BCT layers, COT layers, and DEV layers are stacked from the bottom. In this example, two BCT layers, COT layers, and DEV layers are stacked from the bottom, and the COT layers (E3, E4) will be described with reference to FIG. Shelf units U are arranged in the front-rear direction on the left and right sides of the transport region R from the carrier block D1 to the interface block D3, and two resist film forming modules, which are liquid processing modules, are provided side by side on the other side. It has been. The resist film forming module corresponds to the coating film forming apparatus of the present invention, and supplies a resist solution to the wafer W to form a resist film. The resist film forming module will be described in detail later. Further, in the following description, in order to distinguish the resist film forming modules of the COT layers E3 and E4 from each other, the resist film forming modules of the unit block E3 are COT3A and COT3B, and the resist film forming modules of the unit block E4 are COT4A and COT4B. Each one is shown.

  In the transfer region R, a transfer arm F3 which is a substrate transfer mechanism for transferring the wafer W is provided. The transfer arm F3 is configured to be movable back and forth, vertically movable, rotatable about a vertical axis, and movable in the length direction of the transfer region R, and transfers the wafer W between the modules of the unit block E3. be able to. Further, the six shelf units U are arranged along the length direction of the transfer region R, and the five shelf units U are configured by stacking, for example, two heating modules 21 for performing the heat treatment of the wafer W. ing. One shelf unit U is composed of peripheral edge exposure modules 22 stacked on each other. The peripheral edge exposure module 22 exposes the peripheral edge of the wafer W after resist application.

  The other unit blocks E1, E2, E5, and E6 are configured in the same manner as the unit blocks E3 and E4 except that the chemicals supplied to the wafer W are different and the heating module 21 is provided instead of the peripheral exposure module 22. Is done. The unit blocks E1, E2 include an antireflection film forming module instead of the resist film forming modules COT3 (3A, 3B) and COT4 (4A, 4B), and the unit blocks E5, E6 include a developing module. In FIG. 3, the transfer arms of the unit blocks E1 to E6 are indicated as F1 to F6. The transfer arms F1 to F4 correspond to the forward path side transfer mechanism, and the transfer arms F5 and F6 correspond to the return path side transfer mechanism. The transfer arms F3 and F4 are transfer mechanisms that transfer the wafer W from the outside of the resist film forming module COT to the resist film forming module COT and transfer the wafer W to the resist film forming module COT. In this example, the transport mechanism for transporting the wafer W to the resist film forming module COT and the transport mechanism for transporting the wafer W from the resist film forming module COT are common, but separate transport mechanisms may be used.

  On the carrier block D1 side in the processing block D2, a tower T1 that extends vertically across the unit blocks E1 to E6 and a transfer arm 14 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T1. And are provided. The tower T1 is composed of a plurality of modules stacked on each other, and the module provided at each height of the unit blocks E1 to E6 is a wafer between the transfer arms F1 to F6 of the unit blocks E1 to E6. W can be handed over.

  As these modules, actually, a delivery module TRS provided at the height position of each unit block, a temperature control module CPL for adjusting the temperature of the wafer W, and a buffer module for temporarily storing a plurality of wafers W And a hydrophobizing module for hydrophobizing the surface of the wafer W. In order to simplify the description, the hydrophobic treatment module and the buffer module are not shown.

  The interface block D3 includes towers T2, T3, and T4 extending vertically across the unit blocks E1 to E6. The interface block D3 is an interface that is a transfer mechanism that can be moved up and down to transfer the wafer W to and from the tower T2 and the tower T3. An arm 15, an interface arm 16, which is a liftable transfer mechanism for transferring the wafer W to the tower T 2 and the tower T 4, and an interface for transferring the wafer W between the tower T 2 and the exposure apparatus D 4. An arm 17 is provided. The tower T2 performs a delivery module TRS, a buffer module 23 for storing and retaining a plurality of wafers W before exposure processing, a buffer module for storing a plurality of wafers W after exposure processing, and temperature adjustment of the wafers W. A temperature control module and the like are stacked on each other. Here, illustrations other than the delivery module TRS and the buffer module 23 are omitted. The towers T3 and T4 are also provided with modules, but the description thereof is omitted here.

  A transport path of the wafer W in the system including the coating / developing apparatus 1 and the exposure apparatus D4 will be described. The wafer W is unloaded from the carrier C for each lot. That is, it is set so that the wafers W of the other lot are unloaded from the carrier C after all the wafers W of one lot are paid out. Here, the transfer of the wafer W at the normal time when no trouble has occurred in the resist film forming modules COT3 and COT4 will be described.

  The wafer W is transferred from the carrier C by the transfer mechanism 13 to the transfer module TRS0 of the tower T1 in the processing block D2. The wafer W is transferred from the delivery module TRS0 to the unit blocks E1 and E2 and transferred. For example, when the wafer W is transferred to the unit block E1, among the transfer modules TRS of the tower T1, the transfer module TRS1 corresponding to the unit block E1 (the transfer module capable of transferring the wafer W by the transfer arm F1). The wafer W is transferred from the TRS0. When the wafer W is transferred to the unit block E2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. Delivery of these wafers W is performed by the delivery arm 14.

  The wafer W thus distributed is transferred in the order of TRS 1 → CPL 1 (CPL 2) → antireflection film forming module → heating module 21 → TRS 1 (TRS 2), and subsequently the transfer module corresponding to the unit block E 3 by the transfer arm 14. It is distributed to TRS3 and the delivery module TRS4 corresponding to the unit block E4.

The wafer W thus distributed to TRS3 and TRS4 is TRS3 (TRS4) → CPL3 (CPL4) → resist film forming module COT3 (COT4) → heating module 21 → peripheral exposure module 22 → TRS31 (TRS41) of tower T2. After being transported in order, the interface block D3 is transported in the order of the buffer module 23 → CPL0, and then transported into the exposure apparatus D4. The exposed wafer W is transferred to the transfer modules TRS51 and TRS61 corresponding to the unit blocks E5 and E6 among the transfer modules TRS of the tower T2, respectively, and the heating module 21 → developing module → heating module 21 → transfer module of the tower T1. After being transported to TRS 5 and TRS 6, it is returned to the carrier C via the transfer mechanism 13.

  In the buffer module 23, after all the starting lots are loaded into the exposure apparatus D4, the wafer W is retained so that the subsequent lots are loaded into the exposure apparatus D4. This is because, for example, in the exposure apparatus D4, a reticle corresponding to a lot is used, and the number of times this reticle is exchanged is suppressed to prevent a decrease in throughput. Normally, in the same lot, the wafer W transferred first and the wafer W transferred next are transferred to different unit blocks E. In normal times, the wafers W in the same lot are transferred to the exposure apparatus D4 in the order in which they are unloaded from the carrier C.

  Subsequently, the resist film forming modules COT3 (3A, 3B) and COT4 (4A, 4B) constituting the coating film forming apparatus will be described. These resist film forming modules COT3 and COT4 have the same configuration, and here, as a representative, the resist film forming module COT3A will be described with reference to FIG. The resist film forming module COT3A includes two processing units 31 for processing the wafer W, a plurality of resist solution supply nozzles 32 shared by the processing units 31 and 31, and a solvent supply nozzle constituting the solvent supply unit. 33.

  The processing unit 31 includes a spin chuck 34 that is a substrate holding unit that holds the back surface of the wafer W by suction, and a cup 35 that surrounds the spin chuck 34 and that is open on the upper side. In the figure, 36 is an exhaust pipe for exhausting the inside of the cup 35, and 37 is a port for removing waste liquid in the cup 35. Reference numeral 38 denotes a pin that moves up and down to deliver the wafer W between the spin chuck 33 and the transfer arm F3. The spin chuck 34 rotates around the vertical axis while holding the wafer W horizontally by the drive mechanism 39. A so-called spin coating is performed in which the resist and the solvent supplied from the nozzles 32 and 33 to the central portion of the wafer W are spread to the peripheral portion of the wafer W by the centrifugal force generated by the rotation.

  Each resist solution supply nozzle 32 is connected to a different resist solution supply unit 41 via a pipe 401. Different types of resist solutions are supplied from the resist solution supply units 41. Between the resist solution supply nozzle 32 and the resist solution supply unit 41, a valve V1 and a flow meter 402 are provided in this order toward the upstream side. The flow meter 402 detects the flow rate of the resist solution in the pipe 401 and transmits this detection data to the control unit 5 described later. The control unit 5 described later determines whether or not the flow rate of the resist solution is within an allowable range, and determines whether or not the module COT3A is abnormal.

  FIG. 5 very schematically shows the configuration of the resist solution supply unit 41. The resist solution supply unit 41 includes a resist solution storage unit 403 that pumps the resist solution downstream, a pump 40 provided in the pipe 401, and a valve V2 interposed between the pump 40 and the storage unit 403. The pump 40 includes a housing 411 and a flow path forming member 412 provided in the housing 411. The shape of the flow path forming member 412 changes depending on the internal pressure of the housing 411 when the valve V1 or V2 is open. Due to the deformation, the volume of the flow path 413 of the resist solution constituted by the flow path forming member 412 changes. With this volume change, the pump 40 can suck the resist solution from the upstream side and pump the sucked resist solution to the downstream side. A gas supply pipe 414 and an exhaust pipe 415 are connected to the housing 411, and gas supply to the housing 411 and exhaust from the housing 411 are controlled by opening and closing valves V3 and V4 interposed in the pipes. A pressure sensor 416 for detecting the internal pressure of the housing 411 is provided in the housing 411.

  From the discharge end state where the discharge of the resist solution from the resist solution supply nozzle 32 is completed, the flow path 413 is expanded by the exhaust in the housing 411 with the valve V1 closed and the valve V2 opened, and the flow path 413 is resisted. The liquid is stored and the valve V2 is closed. When the exhaust in the housing 411 is stopped, the gas is supplied to the housing 411, and the internal pressure of the housing 411 is set to a predetermined value, the valve V1 is opened and the resist solution is discharged from the nozzle 32. The control unit 5 described later determines whether or not there is an abnormality in the pump 40 by determining whether or not the pressure detection value by the pressure sensor 416 during discharge of the resist solution is within an allowable range. The pressure sensor 416, the flow meter 402, and the control unit 5 constitute an abnormality detection mechanism.

  Returning to FIG. The solvent supply nozzle 33 is connected to the solvent supply unit 43 through a pipe. The solvent supply unit 43 includes a solvent storage unit and a pump that pumps the solvent in the storage unit to the nozzle 33. This solvent is a liquid that can dissolve the resist film formed by the resist solution. The solvent supply nozzle 33 supplies a solvent to the wafer W on which no resist film is formed, and performs a so-called pre-wet to increase the wettability of the resist solution on the surface of the wafer W, and the wafer W on which the resist film is formed. And a rework for removing the resist film by supplying a solvent.

  Here, the outline of the operation of the resist film forming module COT3 will be described. A resist solution is supplied to the wafer W by using the resist solution supply nozzle 32 in order to form a resist film. During the supply of the resist solution, the control unit 5 monitors the flow rate of the resist solution and the presence / absence of an abnormality of the pump based on the data transmitted from the flow meter 402 and the pump 40. When an abnormality is detected in either the flow rate or the pump, the solvent is supplied from the solvent supply nozzle 33 to the wafer W, and the resist film is removed. That is, the rework is performed. Thereafter, when the resist film is set to be formed again, the resist liquid is again supplied from the nozzle 32 to the wafer W, and the resist film is re-formed. The rework and the re-formation of the resist film may be repeated depending on the setting of the operator, which will be described later, and the abnormal continuation status.

  Continuing the description of FIG. 4, a cup-shaped standby unit 44 whose upper side is opened is provided outside the cup 35 of each processing unit 31. When the wafer W is not processed, the standby unit 44 stores the nozzles 32 and 33. The nozzles 32 and 33 are connected to the drive unit 46 shown in FIG. 1 via the support 45 and can move between the standby unit 44 and the central portion of the wafer W held by the spin chuck 34. In the figure, reference numeral 47 denotes a back surface side solvent supply nozzle for supplying a solvent to the back surface in order to remove the resist adhering to the back surface of the wafer W. In the figure, reference numeral 48 denotes a peripheral portion solvent supply nozzle, which supplies a solvent to the peripheral portion in order to remove the resist film on the peripheral portion on the surface side of the wafer W.

  Next, the control unit 5 will be described with reference to the configuration diagram of FIG. The control unit 5 includes a computer, and includes a program storage unit 52 including a program 51 and a CPU 53 that executes various calculations. In the figure, reference numeral 50 denotes a bus to which the program storage unit and the CPU 53 are connected. In the program 51, a control signal is sent from the control unit 5 to each part of the coating and developing apparatus 1 including the coating film forming module COT to control the transfer of the wafer W and to process the wafer W in each module. Step groups are organized as follows. The program storage unit 52 is configured by a storage medium such as a flexible disk, a compact disk, a hard disk, or an MO (magneto-optical disk) memory card, and the program 51 is installed in the control unit 5 while being stored in such a storage medium. Is done.

  The control unit 5 includes a recipe storage unit 54 including a storage unit. The recipe storage unit 54 stores the resist film formation recipe (denoted as J1, J2, J3... In the figure) and the rework recipe (denoted as K1, K2, K3... In the figure). Has been. The recipe for forming the resist film can be set for each lot of the wafer W by the operator of the apparatus 1, and the resist film is formed in each lot based on the set recipe. Specifically, the resist film formation recipe defines the type of resist solution to be used, the rotational speed of the wafer W at each stage during the formation of the resist film, and the like. The resist film formation recipe set by the operator is stored in the resist film formation recipe storage unit 55 in association with the lot ID. Based on the recipe stored in the storage unit 55, the first resist film forming process and the resist film forming process are performed again on each wafer W.

  The rework recipe defines the solvent discharge time and the rotation speed of the wafer W. As will be described later, this rework recipe can be set for each type of abnormality for each of the resist film forming modules COT3 and COT4. In this example, the type of abnormality includes an abnormality in which the flow rate of the resist solution detected by the flow meter 402 is higher than the upper limit value, an abnormality in which the flow rate is lower than the lower limit value, and an abnormality in the pressure of the pump 40. is there.

  The control unit 5 includes an alarm output unit 56. The alarm output unit 56 is configured by, for example, a display, and when any of the above abnormalities occurs in the resist film forming module COT, which of the resist film forming modules COT3A, COT3B, COT4A, and COT4B has failed. Information indicating what kind of abnormality is displayed as an alarm. The alarm output unit 56 may be configured to notify the operator by outputting the information as a voice instead of displaying the information on the screen.

Next, the setting display unit 57 will be described. The setting display unit 57 is configured by a display. When the above-described abnormality occurs in the resist film forming modules COT3 and COT4 while the operator refers to the setting display unit 57, the type of abnormality of these modules is displayed. Set the countermeasures for each abnormality.
In order to explain how to deal with this abnormality, the operation when abnormality occurs in the resist film forming modules COT3 and COT4 will be further described. The controller 5 shifts the resist film forming modules COT3 and COT4 in which an abnormality has occurred from a normal processing mode in which processing is performed normally to a retry mode in which an operation called retry is performed. This retry is an operation that is used as an index as to whether or not the module in which an abnormality has occurred is disabled. The operator can set an upper limit value of the number of retries in the retry mode as a countermeasure against the abnormality. it can.

As described above, the abnormality includes an abnormality when the flow rate of the resist solution exceeds the upper limit (the upper limit of the flow rate is abnormal), an abnormality when the flow rate is lower than the lower limit (the lower limit of the flow rate is abnormal), and There is an abnormality that causes the pressure detection value of the pump 40 when the resist solution is discharged to be outside the allowable range (hereinafter, simply referred to as pump abnormality). Retry when each of these abnormalities occurs will be described individually. The state in which the module before the transition to the retry mode is operating normally will be referred to as a normal processing mode.

First, the retry when a flow rate abnormality (above the upper limit of the flow rate and the lower limit of the flow rate) occurs will be described. A flow rate abnormality occurs and the normal processing mode is switched to the retry mode. In the retry mode when the flow rate is abnormal, the resist solution is discharged onto the wafer W in the same manner as in the normal processing mode, and the process is performed, and it is monitored whether or not the flow rate abnormality has occurred. If a flow rate abnormality occurs, the resist solution discharge operation is counted as the number of retries, and the retry mode is continued. In other words, during the retry mode, every time an abnormality in the flow rate is detected by discharging the resist solution, the number of retries is counted. If the number of retries exceeds the upper limit, the module becomes unusable. If an abnormality in the flow rate is not detected during the retry, the retry mode is canceled.

  After the resist film is removed (reworked) as described above, the resist solution is supplied again to the wafer W in the same manner as during normal processing. As will be described later, the operator of the apparatus can set whether or not a resist film is again formed on the reworked wafer W to form a resist film. Here, assuming that the resist film is re-formed, the operation of the resist film forming module COT when the flow rate abnormality is detected during execution of the normal processing mode is summarized in the flowchart of FIG.

  When the flow rate upper limit abnormality or the flow rate lower limit abnormality is detected (step X1), the module COT shifts to the retry mode, and after the rework is performed (step X2), the resist solution is supplied again to the wafer W as a retry. Performed (step X3). It is determined whether or not a flow rate upper limit error and a flow rate lower limit error have occurred during this retry (step X4). If it is determined that these flow rate abnormalities have not occurred, the module returns from the retry mode to the normal processing mode, and the retry is performed. The operation is terminated (step X5).

  If it is determined in step X4 that a flow rate abnormality has occurred, it is determined whether or not the number of retries exceeds the set upper limit when the next retry is performed (step X6). . If it is determined that it has not exceeded, the process returns to step X2, and the subsequent steps are sequentially performed. If it is determined that the upper limit has been exceeded, the module COT is set as an unusable module (step X7).

  First, retry when a pump abnormality occurs will be described. A pump error occurs and the normal processing mode is switched to the retry mode. For example, the resist solution is discharged, the flow path 413 of the pump 40 shown in FIG. 5 contracts, and the valve V1 is closed from the state where the valve V2 is closed. Thereafter, the valve V4 is opened for a predetermined time and the housing 411 is exhausted, and then the gas is supplied into the housing 411 by closing the valve V4 and opening the valve V3. When the pressure in the housing 411 is set to a predetermined value, the valve V3 is closed and the gas supply into the housing 411 is stopped. A series of steps from the valve V4 to the closing to the valve V3 is an example of a retry when the pump abnormality occurs. This retry is an operation for estimating whether or not a pump abnormality occurs when the resist solution is actually supplied to the wafer W. The controller 5 calculates a settling time from the opening of the valve V4 during the retry until the pressure in the housing 411 is set to a predetermined value, and determines whether or not the settling time is within an allowable range. As a result, rework and re-formation of the resist film are performed on the wafer W, and whether to return the module COT to the normal processing mode or to set the module COT as an unusable module is determined.

  The flowchart of FIG. 8 summarizes the operation of the resist film forming module COT when a pump abnormality is detected during execution of the normal processing mode as described above. It is assumed that the resist film is re-formed as in the case of the abnormal flow rate. When the pump abnormality is detected in the module COT (step Y1), the module COT shifts to the retry mode and performs the above retry (step Y2). During the retry, the settling time is within an allowable range. (Step Y3), and if it is determined that it falls within the allowable range, the module COT is returned to the normal processing mode (Step Y4), rework is performed (Step Y5), and the resist film forming process is performed again. (Step Y6). If it is determined in step Y3 that a pump abnormality has occurred, it is determined whether or not the number of retries exceeds the set upper limit when the next retry is performed (step Y7). . If it is determined that it has not exceeded, the process returns to step Y2, and the subsequent steps are sequentially performed. If it is determined that the upper limit has been exceeded, the module COT is set as an unusable module (step Y8).

Returning to FIG. Supplementing the upper limit number of retries, this upper limit number can be set for each type of abnormality occurring in the resist film forming module COT.
Further, the operator can set whether to perform the rework recipe and re-formation (reprocessing) of the resist film for each type of abnormality as a countermeasure when the abnormality occurs. Further, the operator can set for each type of abnormality whether the wafer W set to be reprocessed is handled as an abnormal wafer W or a normal wafer W. The normal wafer W and the abnormal wafer W will be described later.

  Thus, the setting content displayed on the setting display unit 57 is performed based on data in a storage unit (not shown) provided in the control unit 5. That is, the operator can make each setting for dealing with an abnormality by changing the data in the storage unit. The operator can arbitrarily set the countermeasure when the abnormality occurs from a setting unit (not shown).

In FIG. 6, reference numeral 58 denotes a storage unit for storing the state of each wafer W, and stores whether the wafer W in each lot is normal or abnormal. In addition, for a normal wafer W, information on whether or not reprocessing has been performed by the resist film forming module COT is also stored. Thus, the data of each wafer W stored in the storage unit 58 corresponds to the setting of the setting display unit 57.
More specifically, a re-processed wafer W that is set to be handled as a normal wafer W is stored as a normal wafer W and a re-process. A wafer W that has been reprocessed and is set to be handled as an abnormal wafer W is stored as being abnormal. The wafer W set so as not to perform reprocessing is stored as an abnormal wafer W. During the resist film forming process, for a wafer W in which no abnormality has occurred in the resist film forming module COT that performs the process, the fact that it is a normal wafer W and the fact that reprocessing has not been performed are stored. . In accordance with the data stored in the storage unit 58, the wafers W after the resist film forming modules COT3 and COT4 are transferred.

  As for the wafer W stored as a normal wafer W, the wafer W is transferred so as to return to the carrier C after the exposure processing and the development processing are performed as in the normal case. For the wafer W stored as an abnormal wafer W, the wafer W is not transferred from the tower T2 of the interface block D3 to the exposure apparatus D4, and the unit blocks E5 and E6 are passed through the transfer modules TRS51 and TRS61 of the tower T2. And is transported to the tower T1 without being transported to the heating module or the developing module and returned to the carrier C. That is, it is returned to the carrier C without being subjected to exposure processing and development processing.

The control unit 5 is provided with a storage unit 59 that stores data for carrying control. Based on the data stored in the transfer control storage unit 59, when an abnormality occurs in the resist film forming modules COT3 and COT4, the wafer W (later-released) that is later discharged from the carrier C in the same lot. Whether or not the wafer W) is transferred to the module subsequent to the resist film forming module COT by overtaking the wafer W (first wafer W) previously discharged from the carrier C is controlled. . Further, depending on the setting as to whether or not to perform such overtaking, the timing at which the transfer path of the wafer W that has been set to be transferred to the module COT where the abnormality has occurred is changed. This timing change will be described later. Further, the storage unit 59 also stores data as to whether or not the subsequent wafer W is carried into the exposure apparatus D4 over the preceding wafer W in the same lot.
Data in each storage unit of the control unit 5 can be freely updated by an operator of the apparatus 1 from a setting unit (not shown) provided in the control unit 5.

  Subsequently, in this coating and developing apparatus 1, when the wafer W of the same lot is distributed and transferred to the resist film forming modules COT3A and COT3B, the module COT3A when the pump abnormality occurs in the resist film forming module COT3A. The operation and the transfer of each wafer W will be described. 9 to 16 are operations in the resist film forming module COT3A, and FIG. 17 is a flowchart showing the processing of the wafer W and the transfer of another wafer W in the module COT3A. Here, it is assumed that the resist film forming module COT is set so that the wafers W in the same lot can be overtaken, and a description will be given with reference to FIGS. In order to explain this overtaking, wafers W1 and W2 in the same lot that are set to be transferred to the resist film forming module COT3A are used here. Wafer W1 is the first wafer that was previously discharged from carrier C, and wafer W2 is the second wafer that was later discharged from carrier C.

  The wafer W1 is carried into the resist film forming module COT3A by the transfer arm F3, and the wafer W is delivered to the spin chuck 34 via the lift pins 38 (FIG. 18). The solvent supply nozzle 33 that has been waiting in the standby unit 44 moves to the center of the wafer W1, the wafer W1 rotates, and the solvent is supplied to the center of the wafer W1 to form the first resist film on the wafer W1. Processing begins. The solvent spreads to the peripheral edge of the wafer W1 by spin coating, and the resist solution supply nozzle 32 moves onto the central portion of the wafer W1 to supply the resist solution 61 to the wafer W1 (FIG. 9). The rotation speed of the wafer W1 at the time of supplying the solvent and at the time of supplying the resist solution is performed in accordance with a resist film forming recipe set in advance for the lot of the wafer W1. Moreover, the resist solution designated by the said recipe is used also about the resist solution used.

  During the supply of the resist solution, the control unit 5 monitors whether there is an abnormality in the pump 40 and an abnormality in the flow rate of the resist solution based on data transmitted from the pressure detection unit of the pump 40 and data transmitted from the flow meter 402. Here, it is assumed that the abnormality of the pump 40 has occurred as described above. The control unit 5 outputs an alarm indicating that the operation of the pump 40 is abnormal by the alarm output unit 56 (corresponding to step S1 in the flowchart of FIG. 17 and step Y1 of the flow in FIG. 8). The resist film forming module COT3A shifts from the normal processing mode to the retry mode, and as shown in FIG. 19, the following wafer W2 and the wafer W that has been set to be loaded into the resist film forming module COT3A are abnormal. Is set so as to be conveyed to the resist film forming module COT3B where no occurrence occurs.

  After the resist solution is discharged, the rotation of the wafer W1 is stopped, the processing for the wafer W1 is temporarily stopped, and the wafer W1 is left in the resist film forming module COT3A (step S2). On the other hand, as shown in FIG. 20, the wafer W2 passes over the left-over wafer W1 and is transferred to the module subsequent to the module COT for processing (step S3). The transfer of the succeeding wafer W overtaking the preceding wafer W will be described in detail later.

  While the wafer W2 is thus transferred, the resist film forming module COT3A performs the retry of the pump 40 (step S4). The retry is repeated within a range not exceeding the preset upper limit, and it is determined whether or not the abnormality is resolved during the retry (step S5). Steps S4 and S5 correspond to steps Y2, Y3, and Y7 shown in the flow of FIG. Here, it is assumed that the abnormality has been resolved during the retry, and the module COT3A has returned from the retry mode to the normal processing mode as shown as step Y4 in FIG. The control unit 5 stops the alarm output from the alarm output unit 56. Of the wafers in the lot to which the wafers W1 and W2 belong, the two resist film forming modules COT3A and COT3B that are not loaded into the resist film forming module COT3A are the same as before the abnormality occurs in the resist film forming module COT3A. It is set so as to be sorted and conveyed.

  Then, in the resist film forming module COT3A, the solvent supply nozzle 33 moves onto the center portion of the left-over wafer W1 (FIG. 10), and the wafer W rotates and moves on the center portion according to a preset rework recipe. The solvent 62 is supplied to the substrate and rework is started (step S6, FIG. 11). The solvent 62 spreads to the peripheral edge of the wafer W by spin coating, and the resist solution 61 applied to the wafer W is washed away and removed from the wafer W1 (FIG. 12).

  The controller 5 determines whether or not the trouble that has occurred in the resist film forming module COT3A is set to perform the coating film forming process again after the rework (step S7). Here, assuming that it is determined that the coating film is formed again, the rotation speed of the wafer W is controlled according to the resist film forming recipe while the supply of the solvent is continued. That is, the rework is stopped and the coating film forming process is started again. Then, while the wafer W1 continues to rotate according to the resist film formation recipe, the supply of the solvent is stopped, the resist solution supply nozzle 32 is moved onto the center of the wafer W, the resist solution 61 is supplied from the nozzle 32, The supply of the resist solution 61 is stopped, the surplus resist solution 61 is shaken off, the supply of the solvent 62 from the nozzles 47 and 48, and the stop of the solvent 62 are sequentially performed. It forms (FIGS. 14-16, step S8). The operations in steps S6 to S8 correspond to steps Y5 to Y6 in the flow of FIG.

  When the nozzles 33 and 32 return to the standby unit 44 and the rotation of the wafer W stops and the resist film forming process is completed (FIG. 14), the wafer W is transferred from the spin chuck 34 to the transfer arm F3 by the lift pins 38. Then, it is unloaded from the resist film forming module COT3A. Further, whether or not the wafer W1 on which the resist film has been re-formed in this way is a normal wafer W is stored in the storage unit 58 according to the setting made in advance. Here, it is assumed that a normal wafer W is stored.

  Thus, the subsequent wafer W is carried into the resist film forming module COT3A from which the wafer W has been dispensed, and the subsequent wafer W is processed (step S9). Then, the wafer W1 on which the resist film has been re-formed is sequentially subjected to exposure processing and development processing, and returned to the carrier C (step S10). When all of the wafers W that have been dispensed are returned to the carrier C, including the wafer W1 on which the resist film has been re-formed in this way, the carrier C is transferred to another apparatus by a transfer mechanism (not shown). The

  In step S5, when the abnormality of the pump is not resolved even if the retry is repeated up to the upper limit, the retry is stopped and the control unit 5 continuously outputs an alarm (step S11). The wafer W1 left behind in the module is stored in the storage unit 59 as an abnormal wafer. Further, the resist film forming module COT3A is set as an unusable module, and the state where the subsequent wafer W is prohibited from being loaded into the module COT3A continues. This step corresponds to step Y8 in the flow of FIG. The wafer W left behind in this manner is rotated and the resist solution applied to the surface is spun off and removed by rotation when the operator of the apparatus instructs. Thereafter, the abnormal wafer W is stored in the storage unit 59 and returned to the carrier C without being subjected to exposure processing and development processing.

  By the way, if it is determined in step S7 that the pump abnormality that has occurred in the module COT3A is set so that the resist film is not formed again, the resist solution 61 is removed from the wafer W, and the rotation of the wafer W is started. After stopping, the wafer W is transferred to the transfer arm F3 as in step S9. The wafer W is stored as an abnormal wafer W in the storage unit 59 and returned to the carrier C without being subjected to exposure processing and development processing. On the other hand, the subsequent wafer W is loaded into the module COT3A and is subjected to processing (step S12).

  If a pump abnormality occurs again when the resist solution is discharged onto the wafer W in order to re-form the resist film in step S8, the steps after step S1 are sequentially executed. That is, retry is repeated again, and if no abnormality is confirmed by this retry, rework and resist solution are performed again.

  Although the case where a pump abnormality has occurred has been described, the case where a flow abnormality occurs will be briefly described focusing on the differences from the case where a pump abnormality has occurred. Assuming that the resist film is formed again, steps S1 to S3 are executed, an alarm is output, and the subsequent transfer of the wafer W to the COT 3A is avoided. And in COT3A, step X2-X4 and X6 are performed as demonstrated with the flow of FIG. That is, rework and re-supply of resist solution (here, equivalent to retry) are performed. If no abnormality is detected during the retry, step S5 for returning from the retry mode to the normal processing mode is performed, thereby clearing the alarm corresponding to steps S6 and S9, unloading the wafer W1 from the module COT3A, and normal. Storage of wafer W1 as wafer W, exposure of wafer W1, development processing, and subsequent loading of wafer W into module COT3A are performed.

  If the number of retries exceeds the upper limit and the module COT3A becomes unusable in step X7, the alarm output in step S11 is continued and the wafer W1 is stored as an abnormal wafer W. In this case, if it is set not to form the resist film again, the wafer W1 is unloaded from the module COT3A after the rework, stored as an abnormal wafer W, and returned to the carrier C.

  In each of the above examples, when an abnormality occurs in the module COT, the subsequent wafer W2 is set so as to be able to pass the preceding wafer W1 loaded in the module COT. Due to the setting, an abnormality occurs in the module COT3A, the mode is changed to the retry mode, and the transfer path of the wafer W is changed. As such, the module COT cannot overtake the wafer W in the same lot. The case where it is set will be described. 21 and 22 are schematic diagrams in this case.

As shown in FIG. 21, during execution of the retry mode, the wafer W2 stands by in a module on the front side of the module COT3A. If the retry is successful and the module does not become unusable, the wafer W1 is unloaded from the module COT3A, and then the wafer W2 is transferred to the module COT3A as set in advance. Thus, the wafer W2 is transferred to the subsequent module without overtaking the wafer W1. However, as shown in FIG. 22, when the retry fails and the module becomes unusable, the transfer path is changed so that the wafer W2 is transferred to the COT3B instead of the module COT3A. As a result, the wafer W2 passes the wafer W1 and is transferred to the module COT and the subsequent module. Except for such a difference, when the resist film forming module COT is set not to be overtaken in the lot as described above, the module COT is set to be overtaken in the lot as described above. The wafer W is transferred.
In each of the above examples, the conveyance in the third unit block E3 has been described, but the fourth unit block E4 is also conveyed in the same manner as the unit block E3 in the resist film forming modules 4A and 4B and the modules before and after that. Done.

Subsequently, the conveyance of the first lot and the next lot when an abnormality occurs in the resist film forming module COT as described above will be described. Specifically, an abnormality occurs in the resist film forming module COT3A, and the 15th wafer W of the lot A becomes the leaving wafer W, and the resist film forming module COT3A performs the above retry, rework, and re-resist film formation. A case where the above is performed will be described as an example of conveyance example 1. In FIG. 23, the resist film forming module COT3A is hatched as a module in which such special processing is performed.
The 15th wafer W of the lot A means the wafer W of the lot A that has been delivered 15th from the carrier C. In the following description of the transfer state, an alphabet indicating the lot type for each wafer And the order of the payout. For example, the 15th wafer W of the lot A is represented as a wafer A15.

  In this conveyance example 1 and other conveyance examples to be described later, the resist film forming module COT in which the abnormality has occurred is provided in the lot subsequent to the lot being processed in the resist film forming module COT in which the abnormality has occurred. It is assumed that it is set so that it is not carried into the unit block but is carried into another unit block for processing. Further, in this transport example 1 and other transport examples described later, it is assumed that when there is an abnormality in the resist film forming module COT, the resist film forming module COT can be overtaken. In other words, the wafer W with the lower number can be transferred to the module subsequent to the resist film forming module COT by overtaking the wafer W with the lower number. Furthermore, in this conveyance example 1, it is assumed that the same lot is set so as not to be overtaken by the exposure apparatus D4. That is, the wafers W of the same lot are set to be transferred to the exposure apparatus D4 in order.

  When an abnormality occurs in the resist film forming module COT3A as described above and the wafer A15 stays in the module COT3A, the wafer A17 of the lot A set to be transferred to the unit block E3 by the wafer W subsequent to the wafer A15, As for A19, A21... A25, the transport path is changed as described above, transported to the resist film forming module COT3B, processed, and transported to the subsequent module. In the unit block E4, the wafers A18, A20, A22... A24 are distributed and transferred to the resist film forming modules COT3A, 3B, and these wafers W are transferred to the subsequent module. Then, each wafer W of the lot B subsequent to the lot A is abnormal in the resist film forming module COT3A, and therefore is transferred to the unit block E4 and processed.

  In FIG. 23, the wafer W of the first lot A is indicated by a solid circle, and the wafer W of the subsequent lot B is indicated by a circle with a large number of dots, indicating the staying state of each wafer W. Further, as described above, since it is set so that there is no overtaking in the exposure apparatus D4 in the same lot, the wafers subsequent to the wafer A15 left in the resist film forming module COT3A, that is, the numbers after the wafer A16, are set. The wafer W stands by in the buffer module 23. Further, since the wafers W are loaded into the exposure apparatus D4 in the order of the lots delivered from the carrier C, the wafers W of the lot B are also retained in the buffer module 23 after leaving the unit block E4.

  From the state shown in FIG. 23, when the resist film formation for the wafer A15 is completed again, and the wafer A15 is transferred to the buffer module 23 and transferred to the exposure apparatus D4, the wafer retained in the buffer module 23 is transferred. Wafers of lot A after A16 are sequentially transferred to the exposure apparatus D4. When the wafer A25, which is the final wafer of the lot A, is loaded into the exposure apparatus D4, the wafers of the lot B are sequentially loaded from the buffer module 23 into the exposure apparatus D4.

  By the way, in the transfer example 1 shown in FIG. 23, if the resist film forming module COT3A is set not to re-form the resist film for the abnormality that has occurred, the wafer A15 is transferred to the exposure apparatus D4. Will not be brought in. Therefore, in this case, after the wafer A14 is transferred to the exposure apparatus D4, the wafers W after the wafer A16 are sequentially transferred to the exposure apparatus D4. Similarly, when it is determined that the retry is unsuccessful and the wafer A15 continues to stay in the resist film forming module COT3A, the wafers A16 and subsequent wafers W are sequentially exposed to the exposure apparatus D4. It is conveyed to.

  Subsequently, conveyance example 2 will be described. This transfer example 2 is the same as the transfer example 1 except that the exposure apparatus D4 is set so that the wafer W can be passed in the same lot. In the resist film forming module COT3A, it is assumed that the resist film is re-formed for the abnormality that has occurred.

  As in transfer example 1, in transfer example 2, wafers A17, A19, A21,... Following wafer A15 are processed by resist film forming module COT3B, transferred to the subsequent module, and then transferred to buffer module 23. Stayed. In the unit block E4, following the wafers A18, A20, A22,... Following the wafer A15, the wafers W in the lot B are processed in order, and these wafers W are retained in the buffer module 23. FIG. 24 shows such a transfer state of the wafer W as in FIG.

  As described above, the exposure apparatus D4 is set so that the wafer W of the same lot can be overtaken. Therefore, even if the wafer A15 is left in the resist film forming module COT3A, Subsequent wafers W are transferred to the exposure apparatus D4. Since the lots A and B are transferred to the exposure apparatus D4 in this order, even if time elapses from the state shown in FIG. If not loaded into D4, the wafers W in the lot B continue to stay in the buffer module 23. When all the wafers W in the lot A including the wafer A15 are carried into the exposure apparatus D4, the wafers W in the lot B are carried into the exposure apparatus D4 from the buffer module 23 in order from the wafer B1.

  Also in this transfer example 2, if the resist film forming module COT3A is set not to re-form the coating film for the abnormality that has occurred, the wafer A15 is not carried into the exposure apparatus D4. Accordingly, in this case, even if the wafer A15 is not transferred to the exposure apparatus D4, when all the wafers W in the lot A except the wafer A15 are loaded into the exposure apparatus D4, the wafer W in the lot B is transferred to the exposure apparatus D4. Carrying in begins. Further, even if the retry fails and the wafer A15 continues to stay in the module COT3A, if all the wafers W in the lot A except the wafer A15 are loaded into the exposure apparatus D4, the wafers W in the lot B Loading into the exposure apparatus D4 is started.

  In the transfer example 2, by changing the transfer order to the exposure apparatus D4 in the same lot, the wafer W of another lot A is exposed during the retry, rework and formation of the resist film again. A decrease in throughput can be prevented. It is possible to select a transfer method for carrying in the exposure apparatus D4 in order in the same lot of the transfer example 1 and a transfer method for carrying in the exposure apparatus D4 in order in the same lot in the transfer example 2. This is to comply with the specifications of the exposure apparatus D4. That is, when the exposure apparatus D4 is a specification that processes the wafers W in the order in which the wafers W are discharged from the carrier C, and the specification that the processing order of the wafers W cannot be changed within the same lot, It is selected so that there is no overtaking by exposure apparatus D4 as in conveyance example 1.

In the resist film forming module COT of the coating and developing apparatus 1, when the resist solution is discharged from the resist solution supply nozzle 32 to the wafer W, the control unit 5 monitors the abnormality of the pump 40 and the flow rate of the resist solution by the flow meter 402. If any of these is detected, the solvent is supplied from the solvent supply nozzle 33 to the wafer W, and the resist solution already supplied onto the wafer W is removed. Thereafter, the resist solution is again supplied from the resist solution supply nozzle 32 to the wafer W to re-form the resist film. Therefore, it is not necessary to select the wafer W on which an abnormal resist film is formed in order to perform rework after the resist film is formed, and the wafer W is provided between the dedicated apparatus for performing rework and the coating / developing apparatus 1. There is no need to hand it over. Therefore, according to the resist film forming module COT, even if an abnormality occurs in the module COT, it is possible to suppress a decrease in productivity of the semiconductor device.
In addition, since it is not necessary to provide a dedicated device for reworking, the manufacturing cost of the semiconductor device can be reduced. Furthermore, since it is not necessary to deliver the carrier C to / from the reworking device in this way, the conveyance path of the carrier C is prevented from becoming complicated, and the lot contained in the carrier C can be easily managed.

  Further, in the case of a pump abnormality, the operation of the pump is confirmed without discharging the resist solution onto the wafer W, so that it is possible to prevent the resist solution from being discharged to the wafer W in vain. Also, if the flow rate is abnormal, this retry is performed before disabling the module COT, and the operation of the module COT is checked, so that the number of times the module is disabled can be suppressed and the processing efficiency can be prevented from being lowered. Can do.

In addition, during the retry, rework, and re-formation of the resist film in the resist film formation module COT where an abnormality has occurred, the subsequent wafer W is transferred to another resist film formation module COT, and the wafer W is further transferred to the exposure apparatus D4. By doing so, it is possible to prevent the productivity of the exposure apparatus D3 from decreasing, and it is possible to suppress a decrease in throughput.
By arranging the buffer module 23 at the front stage of the exposure apparatus D4, even if retry, rework, and re-formation of the resist film are performed as described above, the exposure order of the wafers W is aligned between lots as described above. Can do. As a result, it is not necessary for the exposure apparatus D4 to replace parts in accordance with the lot, so that a decrease in throughput can be suppressed more reliably. Since the buffer module 23 can align the order of exposure of the wafers W even within a lot as described above, the specification of the exposure apparatus D4 can be met.

  In the example described above, it is set in advance whether or not the resist film forming process is to be performed again. When the abnormality occurs in the resist film forming module COT according to the setting, the control unit 5 automatically re-forms the resist film. Is done. If this is called automatic processing, instead of performing such automatic processing, when the abnormality occurs, manual processing is performed in which an operator manually sets whether or not to perform resist film formation again. May be. The operator can arbitrarily set whether to perform automatic processing or manual processing from the control unit 5.

  Further, this manual processing will be described. When an abnormality occurs in the resist film forming module COT as described above, an alarm is output. When an alarm is output, the operator determines whether or not to perform rework and re-resist film formation processing on the wafer W. When it is determined to perform the formation process again, the operator selects a rework recipe and a resist film formation recipe. Rework and resist film formation are sequentially performed according to the recipe. When the processing is completed, the operator sets whether the wafer W is a normal wafer W or an abnormal wafer W, and the setting is written in the storage unit 58. As in the case of execution of automatic processing, when a normal wafer W is set, the reprocessed wafer W is returned to the carrier C after undergoing exposure processing and development processing. When an abnormal wafer W is set, the reprocessed wafer W is returned to the carrier C without being subjected to exposure processing and development processing. Even when the operator decides not to perform the resist film formation process again, the wafer W is stored in the storage unit 58 as an abnormal wafer W. Then, the wafer W is returned to the carrier C without being subjected to exposure processing and development processing.

  The present invention can be applied to an apparatus for forming a coating film, and the coating film is not limited to a resist film. Further, the configuration of the coating and developing apparatus is not limited to the apparatus 1 described above. Hereinafter, a coating and developing apparatus 7 including a protective film forming module to which the present invention is applied and having a configuration different from that of the apparatus 1 will be described. 25 and 26 are a cross-sectional plan view and a longitudinal side view of the coating and developing apparatus 7, respectively. The difference between the coating and developing apparatus 1 will be described. The number of unit blocks E is different and the unit blocks E are not duplicated. Unit blocks E1, E2, E3, and E4 for performing DEV, BCT, COT, and later-described protection film formation (ITC) from the lower side are stacked in this order.

The configuration of each unit block is substantially the same as that of the coating and developing apparatus 1, but the number of liquid processing modules is different, and three processing units are arranged. In this example, one processing unit constitutes one liquid processing module, that is, each unit block is provided with three liquid processing modules. The unit block E4 is provided with a protective film forming module ITC that supplies a chemical solution to the upper layer of the resist film to form a protective film as a liquid processing module. This protective film is water-repellent, for example, and protects the resist film from the liquid supplied to the surface of the wafer W when immersion exposure is performed by the exposure apparatus D4. The protective film forming module ITC has the same configuration as the resist film forming module COT except that the coating liquid is different. In this example, the edge exposure module 22 is provided in the unit block E4 provided with the protective film forming module ITC.

  In the unit blocks E2 and E3, the wafer W transferred to the temperature control module CPL of the tower T1 is sequentially processed by the liquid processing module and the heating module 21, and then transferred to the buffer modules BU2 and BU3 of the tower T1, respectively. The In the unit block E4, the wafer W delivered to the temperature control module CPL of the tower T1 is sequentially processed by the liquid processing module and the heating module 21, and then processed by the peripheral exposure module 23 to be buffered in the tower T1. Transported to module BU4. That is, in the unit blocks E2 to E4, the temperature control module CPL is an entrance to the unit block, and the buffer module BU is an exit of the unit block. Transfer of the wafer W of the temperature control module CPL of the tower T1 from the carrier C is performed by the transfer mechanism 13 in the same manner as the coating and developing apparatus 1.

  A wafer W transfer mechanism 72 is provided between the unit blocks E2 and E1. In addition to the shuttle that actually transports the wafer W, in FIG. 26, the wafer carry-in entrance of the tower T1 and the wafer carry-out exit of the tower T2 are also shown as a transport mechanism 72 together with this shuttle. Wafer W is transferred in the order of buffer module BU4 → transfer arm 14 → tower T2 buffer module 73 → transfer arm 14 → transfer mechanism 72 → interface arm 17 → temperature control module CPL of tower T2 → interface arm 17 → exposure apparatus D4. Is done. The wafer W processed by the exposure apparatus D4 is loaded into the unit block E1 via the interface arm 17 and the transfer module TRS of the tower T2, and the wafer W is transferred to the unit block E1 in the same manner as the unit block E5. Developed. The wafer W is returned to the carrier C by the transfer mechanism 13 from the temperature control module CPL of the tower T1. Although the towers T1 and T2 actually have a plurality of CPLs and TRSs, they are shown to be smaller than the actual number.

  A transfer example 3 in the case where an abnormality occurs in one of the three protective film forming modules ITC in the coating and developing apparatus 7 and the wafer A15 is left behind will be described. For convenience of explanation, it is assumed that the protective film forming module in which an abnormality has occurred is ITC1, and the other protective film forming modules are ITC2 and ITC3. In the transfer example 3, it is assumed that, in the wafers W in the same lot, the subsequent wafer W is set so as not to be transferred into the exposure apparatus D4 over the preceding wafer W.

  FIG. 27 shows the transfer state of the wafer W as in FIGS. 23 and 24 described above. In order to prevent the wafer A subsequent to the wafer A15 from being transferred into the exposure apparatus D4, the transfer of the wafer W subsequent to the wafer A16 is stopped. Further, in this coating / developing apparatus 7, since the unit blocks are not duplicated, the order of the wafers W does not change when the wafers W of other unit blocks first face the exposure apparatus D4. The transfer of the wafer W loaded in another module in the block E4 is also stopped. That is, the transfer of the wafer W transferred to the heating module 21 and the edge exposure module 22 of the unit block E4 is also stopped. In this example, the wafers A8 to A14 are loaded into the modules 21 and 22, and the transfer of these wafers W is stopped. Although not shown in FIG. 27, since the wafer W of the lot B is stopped in the unit block E4 in this way, it is not transferred to the unit block E4, and the transfer is stopped in each module of the preceding unit block. Or, it remains in the carrier C.

  The wafer W transferred to the buffer module BU4 that is the exit of the unit block E4 and the subsequent module is transferred to the exposure apparatus D4. That is, the wafers A5 to A7 shown in the drawing and the wafers A1 to A4 (not shown) are transferred to the subsequent module and processed in the same manner as in the normal state. As described in the coating and developing apparatus 1, the protective film forming module ITC1 performs a retry, and when the abnormality is resolved, the rework is performed. In this rework, the underlying resist film is removed together with the protective film by the solvent. After completion of the rework, the wafer A15 is transferred to the temperature control module CPL of the unit block E3 by the transfer arm 14 using an empty temperature control module CPL (not shown in FIG. 27) of the tower T1, and the unit block E3. A resist film is formed. Thereafter, the unit is returned to the unit block E4 and is transported to the module ITC1 in which the abnormality is eliminated. After the protective film is formed in the module ITC1, the transport is performed toward the exposure apparatus D4. In parallel with the movement of the wafer A15 between the unit blocks E3 and E4, the wafer W staying in the unit block E4, that is, the wafers A8 to A19 in the drawing, is transferred to the subsequent module so as not to overtake the wafer A15. Be transported.

  FIG. 28 shows transfer example 4, and the difference from transfer example 3 is that the subsequent wafer W is set to be transferred to the exposure apparatus D4 earlier than the first wafer W in the same lot. . Since such a setting is made, the wafer W of the lot A other than the wafer A15 left in the module ITC1 is transferred to the subsequent module and processed by the exposure apparatus D4 in the same way as in the normal time. Therefore, as shown in FIG. 28, wafers W of wafers A16 to A20 are carried into exposure apparatus D4. Thereafter, wafers W of subsequent wafers A21 to A25 are also carried into the exposure apparatus D4.

  Since the lot B is carried into the exposure apparatus D4 after the wafer W of the lot A, the lot B can be transferred to the temperature control module CPL in the previous stage of the module ITC1 where the abnormality has occurred. When the abnormality of the protective film forming module ITC1 is resolved, as described in the transfer example 3, the wafer A15 is transferred between the unit blocks E3 and E4 after reworking, undergoes formation of a resist film and formation of a protective film, and exposure. Transported to device D4. Subsequent to this wafer A15, the wafers W of lot B are sequentially transferred to the exposure apparatus D4.

  In this way, when the protective film and the resist film are re-formed, the same effect as that when the resist film is re-formed can be obtained. The coating and developing apparatus 1 is also provided with a protective film forming module ITC like the coating and developing apparatus 7, and when the module becomes abnormal, the resist film and the protective film are re-formed after rework. Can do.

  The film formed on the substrate such as the wafer W is not limited to the resist film or the protective film. For example, the present invention may be applied to the antireflection film forming module. However, since this antireflective film is difficult to remove with a solvent after the heat treatment by the heating module 21, as shown in the example of the resist film, a solvent is supplied before such heating, and the film The chemical solution for forming is removed from the substrate. Furthermore, the present invention can be applied to an apparatus for forming a SOG (Spin On Glass) film which is an insulating film by supplying a chemical solution to a substrate. However, since this SOG film is difficult to remove with a solvent after the chemical solution is applied and then the substrate is rotated and the chemical solution is shaken off, as shown in the above resist film example, Supply the solvent. Thereby, the chemical solution is removed from the substrate. Furthermore, the present invention can be applied to an apparatus for forming a lower layer film. This lower layer film is a film formed under the antireflection film.

  In the coating and developing apparatuses 1 and 7, when the coating film is re-formed on the reworked wafer W, the unit W of the unit block provided with the liquid processing module in which the abnormality is caused by the transfer arm F is applied to the wafer W. You may convey to a temperature control module. Therefore, after adjusting the temperature, the coating liquid is supplied to the wafer W by the transfer arm F to form a coating film again. By performing the film formation again after adjusting the temperature in this way, a coating film can be formed with high uniformity between wafers of the same lot. For example, if the coating / developing apparatus 1 performs the transfer as described above, when an abnormality occurs in the resist film forming module COT3A, the subsequent wafer W2 stands by on the front side of the temperature control module CPL3. When the rework is completed in the resist film forming module COT3A, the temperature of the wafer W1 subjected to the rework is controlled by the temperature control module CPL3, and the resist film is re-formed by the resist film module COT3A. After the wafer W1 is unloaded from the temperature control module CPL3, the wafer W2 is transferred to the temperature control module CPL3.

  For ease of explanation, the flow rate abnormality of the coating liquid and the pressure abnormality of the pump have been described as being abnormalities of the coating film forming module, but the abnormality is not limited to such an example. For example, the flow rate of the solvent supply nozzles 47 and 48 may be monitored, or the abnormality of the pump for supplying the solvent from these nozzles 47 and 48 may be monitored. When an abnormality in the flow rate or pump is detected, rework and re-formation of the resist film can be performed as described above. Further, the detection of the abnormality of the pump is not limited to the detection of the pressure as described above. For example, the configuration may be such that the flow path 413 of the pump 40 contracts due to the expansion and contraction of the cylinder, and the presence or absence of an abnormality of the pump 40 may be detected by monitoring the extension of the cylinder. Further, the abnormality may be an operation failure when the nozzle 48 is moved or an operation failure of the elevating pins 38 when the wafer W after the coating process is transferred to the transfer arm F.

  Moreover, it is not restricted to performing rework and re-forming of a coating film based on the flow volume and pressure of a chemical | medical solution in this way. For example, a camera that images the tips of the nozzles 32 and 33 is provided on the nozzle support portion 45. After the resist solution is supplied to the wafer W by the resist solution supply nozzle 32, if the resist solution drips from the nozzle 33 while the resist solution supply nozzle 32 moves on the wafer W to the standby unit 44, Rework and re-formation of the coating film may be performed.

  Retry is performed without discharging the resist solution in the above example. For example, the nozzle 32 moves to the standby unit 44 and discharges the resist solution to the standby unit 44. At this time, whether or not a flow rate abnormality and a pump abnormality occur may be monitored. It is also conceivable to supply the developer to the exposed wafer W and perform rework and reprocessing when the above abnormality occurs. In this case, the rework is an operation of discharging pure water onto the wafer W and removing the developer already supplied to the wafer W, but the development of the wafer W is advanced by the developer before the rework is started. Therefore, the present invention is preferably applied to a coating film forming apparatus.

W Wafer 1 Coating and developing device COT Resist film forming module ITC Protective film forming module 32 Resist liquid supply nozzle 33 Solvent supply nozzle 34 Spin chuck 40 Pump 41 Resist liquid supply section 5 Control section 51 Program

Claims (14)

In a coating film forming apparatus for forming a coating film by supplying a coating liquid to a substrate,
A holding unit for holding the substrate delivered from the outside by a transport mechanism;
A coating solution supply unit for supplying the coating solution to the substrate held by the holding unit;
An abnormality detection mechanism that detects an abnormality that occurs in the coating film forming apparatus after the coating liquid is supplied to the substrate held by the holding unit and before the substrate is delivered to the transport mechanism;
When an abnormality is detected by the abnormality detection mechanism, the solvent supply unit for supplying the solvent of the coating film to the substrate held by the holding unit and removing the coating film from the substrate;
A control unit that outputs a control signal so as to form a coating film by supplying the coating liquid again to the substrate from which the coating film has been removed, and a controller that controls the supply of the coating liquid from the coating liquid supply unit to the substrate;
A coating film forming apparatus comprising:   The coating film according to claim 1, wherein the control unit outputs a control signal so as to control the supply of the solvent from the solvent supply unit to the substrate based on a detection result of the abnormality by the abnormality detection mechanism. Forming equipment.   3. The abnormality detection mechanism detects at least one of an abnormality in a flow rate of a coating liquid supplied to the substrate and an abnormality in operation of a pump provided in the coating liquid supply unit. Coating film forming apparatus.   The controller determines whether or not the abnormality of the pump is detected again at the time of supplying the coating liquid again before supplying the coating liquid to the substrate again when the abnormality of the operation of the pump is detected. 4. The coating film forming apparatus according to claim 3, wherein the control signal is output so that the pump performs a preset confirmation operation. In a coating and developing apparatus for forming a resist film on a substrate, supplying a developer to the exposed resist film and developing the resist film,
A first coating film forming module and a second coating film forming module, each of which forms a coating film of the same kind of any one of the resist film and a laminated film formed above or below the resist film;
A mounting table for mounting a carrier for storing a plurality of the substrates;
A forward-side transport mechanism that distributes and transports the substrate stored in the carrier to the first coating film forming module and the second coating film forming module;
The substrate processed by the first coating film forming module and the second coating film forming module and further exposed to the substrate is returned to the carrier through the developing module which supplies the developer to the substrate and develops the substrate. A return-side transport mechanism for transporting;
With
The first coating film forming module is a coating film forming apparatus that forms a coating film by supplying a coating liquid to a substrate,
A holding unit for holding the substrate delivered from the outside by a transport mechanism;
A coating solution supply unit for supplying the coating solution to the substrate held by the holding unit;
An abnormality detection mechanism that detects an abnormality that occurs in the coating film forming apparatus after the coating liquid is supplied to the substrate held by the holding unit and before the substrate is delivered to the transport mechanism;
When an abnormality is detected by the abnormality detection mechanism, the solvent supply unit for supplying the solvent of the coating film to the substrate held by the holding unit and removing the coating film from the substrate;
A control unit that outputs a control signal so as to form a coating film by supplying the coating liquid again to the substrate from which the coating film has been removed, and a controller that controls the supply of the coating liquid from the coating liquid supply unit to the substrate;
With
When the abnormality is detected in the first coating film forming module by the abnormality detection mechanism, the forward-side transport mechanism is set to follow the previously set transfer to the first coating film forming module. A coating and developing apparatus, wherein the substrate is transported to a second coating film forming module. In the first coating film forming module, while the coating film is removed and the coating film is formed again on the substrate,
A substrate belonging to the second lot set to be carried into the exposure apparatus after the first lot to which the substrate belongs and processed by the second coating film forming module is first carried into the exposure apparatus. To prevent that
6. The coating and developing apparatus according to claim 5, further comprising a buffer module for retaining a plurality of substrates belonging to the second lot.   In order to transport the substrate to the exposure apparatus in a preset order, the buffer module includes the substrate in the first lot including the substrate on which the coating film has been removed and the coating film has been formed again. The coating and developing apparatus according to claim 6, wherein a plurality of substrates in the first lot are retained. In a coating film forming method of forming a coating film by supplying a coating liquid to a substrate,
Holding the substrate delivered from the outside by the transport mechanism in the holding unit;
Supplying the coating liquid from the coating liquid supply section to the substrate held by the holding section;
A step of detecting an abnormality occurring in the coating film forming apparatus by an abnormality detection mechanism after the coating liquid is supplied to the substrate held by the holding unit and before being delivered to the transport mechanism;
When an abnormality is detected by the abnormality detection mechanism, supplying a solvent of the coating film to the substrate held by the holding unit by the solvent supply unit, and removing the coating film from the substrate;
Supplying the coating liquid again to the substrate from which the coating film has been removed to form a coating film; and
A method for forming a coating film, comprising:   The step of detecting an abnormality occurring in the coating film forming apparatus detects at least one of an abnormality in a flow rate of the coating liquid supplied to the substrate and an abnormality in operation of a pump provided in the coating liquid supply unit. The coating film forming method according to claim 8.   In order to estimate whether or not the abnormality of the pump is detected again when the coating liquid is supplied again before supplying the coating liquid to the substrate again when the abnormality of the operation of the pump is detected. The coating film forming method according to claim 9, wherein the pump performs a preset confirmation operation. In a coating and developing method in which a resist film is formed on a substrate, and a developer is supplied to the exposed resist film for development.
Forming a coating film of the same kind of any one of the resist film and a laminated film formed above or below the resist film in the first coating film forming module and the second coating film forming module; Done
In the first coating film forming module,
In a coating film forming method of forming a coating film by supplying a coating liquid to a substrate,
Holding the substrate delivered from the outside by the transport mechanism in the holding unit;
Supplying the coating liquid from the coating liquid supply section to the substrate held by the holding section;
A step of detecting an abnormality occurring in the coating film forming apparatus by an abnormality detection mechanism after the coating liquid is supplied to the substrate held by the holding unit and before the substrate is delivered to the transport mechanism;
When an abnormality is detected by the abnormality detection mechanism, supplying a solvent of the coating film to the substrate held by the holding unit by the solvent supply unit, and removing the coating film from the substrate;
A step of supplying a coating liquid again to form a coating film on the substrate from which the coating film has been removed,
The coating and developing methods are:
Mounting a carrier for storing a plurality of the substrates on a mounting table;
Distributing and transporting the substrate stored in the carrier to the first coating film forming module and the second coating film forming module, respectively, by an outward path transport mechanism;
The substrate processed by the first coating film forming module and the second coating film forming module and further exposed is supplied through the developing module for supplying the developing solution to the substrate and developing the substrate by a return-side transport mechanism. Transporting the carrier back to the carrier;
With
When the abnormality is detected in the first coating film forming module by the abnormality detection mechanism of the first coating film forming module, the forward path transport mechanism is transported to the first coating film forming module. A step of transferring the subsequent substrate set in advance to the second coating film forming module;
A coating and developing method comprising:   In the first coating film forming module, while the coating film is removed and the coating film is formed again on the substrate, it is carried into the exposure apparatus after the first lot to which the substrate belongs. In order to prevent the substrate belonging to the set second lot and processed by the second coating film forming module from being carried into the exposure apparatus first, a plurality of substrates belonging to the second lot are stored in the buffer module. 12. The coating and developing method according to claim 11, further comprising a step of retaining.   In order to transport the substrate to the exposure apparatus in a preset order with respect to the substrate in the first lot including the substrate on which the coating film is removed and the coating film is formed again, the first lot The coating and developing method according to claim 12, wherein a plurality of substrates are retained in the buffer module. A storage medium storing a computer program used in a coating film forming apparatus for supplying a coating liquid to a substrate to form a coating film,
A storage medium characterized in that the computer program is for carrying out the coating film forming method according to any one of claims 8 to 10.

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