CN109712865B - Wet chemical etching device and wet chemical etching process - Google Patents

Wet chemical etching device and wet chemical etching process Download PDF

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CN109712865B
CN109712865B CN201811619524.3A CN201811619524A CN109712865B CN 109712865 B CN109712865 B CN 109712865B CN 201811619524 A CN201811619524 A CN 201811619524A CN 109712865 B CN109712865 B CN 109712865B
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swing arm
wafer
liquid medicine
nozzle
chemical etching
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CN109712865A (en
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王丽江
王勇威
范文斌
胡天水
夏楠君
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Beijing Semiconductor Equipment Institute
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Beijing Semiconductor Equipment Institute
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Abstract

The invention relates to the technical field of wafer cleaning in semiconductor wafer manufacturing, in particular to a wet chemical etching device and a wet chemical etching process, which are used for relieving the technical problem of secondary wafer pollution in the conventional wet chemical etching device. The device comprises a first swing arm, a second swing arm and a third swing arm; the first swing arm, the second swing arm and the third swing arm are arranged in an enclosing mode to form a working space for containing the wafer; the first swing arm, the second swing arm and the third swing arm are respectively used for spraying liquid medicine, megasonic water and nitrogen to the top surface of the wafer. According to the invention, the first swing arm for spraying liquid medicine, the second swing arm for spraying megasonic water and the third swing arm for spraying nitrogen are integrated in the same device, and the wafer can finish three processes of chemical corrosion, megasonic water cleaning and nitrogen drying in the device, so that the transportation process of the wafer among the three processes is omitted, the secondary pollution of the wafer in the transportation process is avoided, and the working efficiency is improved.

Description

Wet chemical etching device and wet chemical etching process
Technical Field
The invention relates to the technical field of wafer cleaning in semiconductor wafer manufacturing, in particular to a wet chemical etching device and a wet chemical etching process.
Background
In an integrated circuit fabrication process, multiple wet processing steps of a wafer are included. The wet process is to soak or rinse the wafer by using liquid chemicals such as acid-base organic matters, so as to achieve the purposes of cleaning surface particles, removing reaction polymers, etching surface film layers and the like.
Etching is one of the key processes in the integrated circuit fabrication process, and is a process of selectively removing unwanted material from the surface of a silicon wafer by chemical or physical means. The quality of the etching quality directly influences the yield and the performance of the chip. There are two common etching processes used in semiconductor manufacturing technology: wet chemical etching and dry etching. Wet chemical etching is widely used in semiconductor manufacturing processes. It uses chemical corrosion liquid to remove the material on the surface of the wafer by chemical reaction. In the wafer manufacturing process, the wet chemical etching process is realized by immersing the wafer in an etching solution or spraying the etching solution on the surface of the wafer. The immersion etching process is to immerse the wafer into the etching solution, and the temperature and the stirring of the etching solution have great influence on the etching rate. The spray type etching process is to provide stable new etching liquid to the surface of the wafer, so that the etching rate is higher, and the etching uniformity is more stable than that of the immersion type process.
In the spray etching process, chemical etching, megasonic water cleaning and nitrogen drying are required on the processing surface of the wafer. In the prior art, the three processes are completed by different devices, so that the secondary pollution of the wafer can be caused in the device replacement and transportation processes, the cleaning quality of the wafer is influenced, and the working efficiency is low. Meanwhile, after the spraying liquid is sprayed to the surface of the wafer in the spraying process, the spraying liquid cannot be recycled due to the fact that various spraying liquids are mixed together, the using amount of the spraying liquid is large, and the utilization rate of raw materials is low.
Therefore, the existing wet chemical etching device has the technical problem of secondary pollution of the wafer.
Disclosure of Invention
The invention aims to provide a wet chemical etching device and a wet chemical etching process, which are used for relieving the technical problem of secondary pollution of wafers in the conventional wet chemical etching device.
In order to solve the technical problems, the technical scheme provided by the invention is as follows:
a wet chemical etching device comprises a first swing arm, a second swing arm and a third swing arm;
the first swing arm, the second swing arm and the third swing arm enclose a working space for containing wafers;
the first swing arm, the second swing arm and the third swing arm are respectively used for spraying liquid medicine, megasonic water and nitrogen to the top surface of the wafer.
Further, in the present invention,
the first swing arm, the second swing arm and the third swing arm surround the center of the wafer, nozzles are arranged at the end parts of the first swing arm, the second swing arm and the third swing arm, and the respective nozzles can rotate to the position above the wafer.
Further, in the present invention,
the wet chemical etching device also comprises a liquid medicine collecting shell positioned in the working space, and the bottom of the liquid medicine collecting shell is connected with the first lifting assembly; the liquid medicine collecting shell can be driven by the first lifting component to lift so as to collect and isolate liquid medicine sprayed to the surface of the wafer.
Further, in the present invention,
the first lifting assembly comprises a connecting rod and a first cylinder sliding table;
one end of the connecting rod is connected with the bottom of the liquid medicine collecting shell, and the other end of the connecting rod is connected with the movable end of the first cylinder sliding table;
the fixed end of the first cylinder sliding table is arranged at the bottom of the device;
the movable end of the first cylinder sliding table can move along the length direction of the connecting rod and drive the liquid medicine collecting shell to lift.
Further, in the present invention,
the wet chemical etching device further comprises a shell capable of accommodating the first swing arm, the second swing arm and the third swing arm, and a feed inlet is formed in the side face of the shell.
Further, in the present invention,
the wet chemical etching device also comprises a bearing mechanism positioned in the working space, wherein the bearing mechanism comprises an objective table and a motor;
the objective table is connected with an output shaft of the motor and can rotate around the axis of the objective table; the object stage is used for supporting the wafer.
Further, in the present invention,
the objective table is set as a vacuum chuck.
Further, in the present invention,
the wet chemical etching device also comprises a first nozzle mechanism, wherein a nozzle of the first nozzle mechanism faces the top surface of the wafer and is used for spraying DI water to the top surface of the wafer.
Further, in the present invention,
the wet chemical etching device also comprises a second nozzle mechanism, wherein a nozzle of the second nozzle mechanism faces the bottom surface of the wafer and is used for spraying DI water or the nitrogen to the bottom surface of the wafer.
A wet chemical etching process adopting the wet chemical etching device comprises the following steps:
the liquid medicine collecting shell ascends;
the nozzle of the first swing arm rotates to the position above the wafer and then sprays the liquid medicine on the top surface of the wafer;
the liquid medicine collecting shell descends and withdraws after collecting liquid medicine residual liquid;
a nozzle of the second swing arm rotates to the position above the wafer, and then the megasonic water is sprayed on the top surface of the wafer;
and spraying the nitrogen to the top surface of the wafer after the nozzle of the third swing arm rotates to the position above the wafer.
By combining the technical scheme, the invention has the beneficial effects that:
according to the wet chemical etching device, the first swing arm for spraying liquid medicine, the second swing arm for spraying megasonic water and the third swing arm for spraying nitrogen are integrated in the same device, and the wafer can be subjected to chemical etching, megasonic water cleaning and nitrogen drying in the device, so that the transportation process of the wafer among the three processes is omitted, secondary pollution of the wafer in the transportation process is avoided, and the working efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a wet chemical etching apparatus according to an embodiment of the present invention;
FIG. 2 is a top view of a wet chemical etching apparatus according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a wet chemical etching apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a liquid medicine collecting housing in the wet chemical etching apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a first swing arm in the wet chemical etching apparatus according to the embodiment of the present invention.
Icon: 100-a housing; 200-a first swing arm; 300-a second swing arm; 400-a third swing arm; 500-a wafer; 600-a carrying mechanism; 700-a first nozzle mechanism; 800-a second nozzle mechanism; 900-an exhaust duct; 110-a liquid medicine collecting shell; 111-a discharge port; 120-a lifting assembly; 121-connecting rod; 122-cylinder slide; 130-a feed inlet; 210-a nozzle; 220-a rotation mechanism; 221-a central axis; 222-a rotating arm; 223-a first motor; 230-a nozzle rotation mechanism; 231-a first drive assembly; 232-driving wheel; 233-driven wheel; 234-a drive belt; 235-a driven shaft; 240-a lifting mechanism; 241-a second drive assembly; 610-an object stage; 620-motor; 710-a first mount; 720-a first nozzle; 730-a rotating shaft; 810-a second holder; 820-second nozzle.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Embodiments 1 to 2 are described in detail below with reference to the drawings.
Example 1
This embodiment provides a wet chemical etching apparatus, please refer to fig. 1 to 5 together. FIG. 1 is a schematic structural diagram of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 2 is a top view of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 3 is a cross-sectional view of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 4 is a schematic structural diagram of a liquid medicine collecting housing in the wet chemical etching apparatus according to an embodiment of the present invention; fig. 5 is a schematic structural diagram of a first swing arm in the wet chemical etching apparatus according to the embodiment of the present invention.
The wet chemical etching device comprises a first swing arm 200, a second swing arm 300 and a third swing arm 400; the first swing arm 200, the second swing arm 300 and the third swing arm 400 enclose a working space for containing the wafer 500; the first swing arm 200, the second swing arm 300, and the third swing arm 400 are used to spray the chemical solution, the megasonic water, and the nitrogen gas to the top surface of the wafer 500, respectively.
The wet chemical etching device provided by the embodiment integrates the first swing arm 200 for spraying liquid medicine, the second swing arm 300 for spraying megasonic water and the third swing arm 400 for spraying nitrogen into the same device, so that the wafer 500 can finish the three processes of chemical etching, megasonic water cleaning and nitrogen drying inside the device, the transportation process of the wafer 500 among the three processes is omitted, the secondary pollution of the wafer 500 in the transportation process is avoided, and the working efficiency is improved.
In an alternative to this embodiment, it is preferable that,
the first swing arm 200, the second swing arm 300, and the third swing arm 400 are disposed around the center of the wafer 500, and the nozzles 210 are disposed at the ends thereof, and the respective nozzles 210 can rotate above the wafer 500. The first swing arm 200, the second swing arm 300 and the third swing arm 400 can be uniformly distributed around the center of the wafer 500, and the nozzle 210 can rotate to the position above the wafer 500 to spray the top surface of the wafer 500. However, other arrangements that enable the nozzles 210 to rotate above the wafer 500 are within the scope of the disclosure.
It should be noted that the structures of the first swing arm 200, the second swing arm 300, and the third swing arm 400 are the same, and only the structure of the first swing arm 200 will be specifically described here.
Considering that the nozzles 210 of the first swing arm 200 need to uniformly spray the chemical solution onto the top surface of the wafer 500, the rotating mechanism 220 is disposed to drive the nozzles 210 to swing on the top surface of the wafer 500. The rotating mechanism 220 includes a central shaft 221, a rotating arm 222, and a first motor 223; the central shaft 221 is connected with an output shaft of the first motor 223 and can rotate around the axis of the central shaft; the rotating arm 222 is mounted on the central shaft 221 and can rotate along with the central shaft 221; the nozzle 210 is mounted to an end of the rotating arm 222 remote from the central axis 221. The first motor 223 drives the central shaft 221 to rotate forward, and the central shaft 221 drives the rotating arm 222 and the nozzle 210 to rotate clockwise; the first motor 223 drives the central shaft 221 to rotate reversely, and the central shaft 221 drives the rotating arm 222 and the nozzle 210 to rotate counterclockwise. The change of the movement area of the rotating arm 222 is realized through the forward and reverse rotation of the first motor 223, so that the nozzle 210 can move above the wafer 500, the uniform spraying of the liquid medicine is realized, and the waste caused by the liquid medicine spraying to other areas is avoided.
In order to further realize the effect of uniform spraying, the first mode is as follows: the rotating arm 222 is provided with a nozzle rotating mechanism 230 therein to rotate the nozzle 210. The nozzle rotation mechanism 230 includes a first driving assembly 231, a driving pulley 232, a driven pulley 233, a transmission belt 234, and a driven shaft 235; the driving wheel 232 is arranged at the output end of the first driving assembly 231 and can rotate around the axis thereof; the transmission belt 234 is engaged with the driving pulley 232 and the driven pulley 233; the driven shaft 235 is rotatably connected with the driven wheel 233; the nozzle 210 is rotatably mounted to a driven shaft 235. The first driving assembly 231 drives the driving wheel 232 to rotate, the driving wheel 232 drives the driven wheel 233 to rotate through the transmission belt 234, and the driven shaft 235 connected to the driven wheel 233 to rotate therewith drives the nozzle 210 to rotate. The first driving assembly 231 may be provided as the second motor, or may be provided as the central shaft 221. The driving wheel 232, the driven wheel 233 and the transmission belt 234 can also be arranged as a chain transmission.
In order to further realize the effect of uniform spraying, the second mode is as follows: the wet chemical etching device also comprises a bearing mechanism 600 positioned in the working space, wherein the bearing mechanism 600 comprises an object stage 610 and a motor 620; the object stage 610 is connected with an output shaft of the motor 620 and can rotate around the axis of the object stage; the stage 610 is used to support the wafer 500. The motor 620 can rotate the stage 610 and further rotate the wafer 500 on the stage 610, so that the liquid medicine, the megasonic water and the nitrogen sprayed onto the top surface of the wafer 500 are more uniform. In order to prevent the wafer 500 from being detached from the stage 610 during the rotation, the stage 610 is configured as a vacuum chuck that sucks the wafer 500 by pressure to prevent the wafer 500 from being detached.
In addition, in order to facilitate adjustment of the spraying distance between the nozzle 210 and the top surface of the wafer 500, a lifting mechanism 240 is provided to enable the nozzle 210 and the rotating arm 222 to be lifted. The lifting mechanism 240 includes a second driving assembly 241, the central shaft 221 is connected with an output shaft of the second driving assembly 241, and the second driving assembly 241 can drive the central shaft 221 to move along the length direction thereof. It should be noted that the second driving assembly 241 may be provided as a third motor, and may also be provided as an air cylinder. The lifting mechanism 240 can drive the rotating arm 222 to lift, so that the nozzle 210 moves to a proper position for spraying.
In an alternative to this embodiment, it is preferable that,
a medical fluid collecting housing 110 is provided in the working space to collect medical fluid and separate the medical fluid from the megasonic water. Specifically, the bottom of the liquid medicine collecting housing 110 is connected to the lifting assembly 120; the lifting assembly 120 can drive the liquid medicine collecting housing 110 to lift (see fig. 4 for details), when the first swing arm 200 sprays the liquid medicine onto the top surface of the wafer 500, the lifting assembly 120 drives the liquid medicine collecting housing 110 to lift, the liquid medicine collecting housing 110 is wrapped around the outside of the wafer 500, and the liquid medicine residual liquid sprayed onto the top surface of the wafer 500 flows into the liquid medicine collecting housing 110. After the liquid medicine spraying is finished, the lifting assembly 120 drives the liquid medicine collecting housing 110 to descend, and the megasonic water sprayed to the surface of the wafer 500 flows out of the liquid medicine collecting housing 110. Preferably, two lifting assemblies 120 are symmetrically arranged at the bottom of the liquid medicine collecting housing 110 to ensure that the liquid medicine collecting housing 110 can be uniformly supported.
Wherein, the concrete structure of the lifting assembly 120 is: the lifting assembly 120 includes a connecting rod 121 and a cylinder slide 122; one end of the connecting rod 121 is connected with the bottom of the liquid medicine collecting shell 110, and the other end is connected with the movable end of the cylinder sliding table 122; the fixed end of the cylinder slide table 122 is mounted at the bottom of the apparatus. The movable end of the cylinder sliding table 122 can move along the length direction of the connecting rod 121 and drive the liquid medicine collecting shell 110 to lift.
The specific structure of the liquid medicine collecting housing 110 is as follows: the medical fluid collection housing 110 may be, but is not limited to being, provided in a cylindrical structure. The bottom of the medical fluid collecting housing 110 is provided with a discharge port 111 for discharging medical fluid, the discharge port 111 is communicated with the medical fluid recovery device, and medical fluid residual fluid in the medical fluid collecting housing 110 is discharged into the medical fluid recovery device through the discharge port 111. In addition, in order to facilitate the liquid medicine to be sprayed to the top surface of the wafer 500, the top of the liquid medicine collecting housing 110 is provided with an avoiding hole, and the liquid medicine sprayed by the first swing arm 200 enters the liquid medicine collecting housing 110 through the avoiding hole and then moves to the top surface of the wafer 500.
In an alternative to this embodiment, it is preferable that,
the wet chemical etching apparatus further includes a housing 100 capable of accommodating the first swing arm 200, the second swing arm 300, and the third swing arm 400, wherein the three processes of chemical etching, megasonic water cleaning, and nitrogen drying are performed in the housing 100, and the housing 100 can isolate the working space from the outside to reduce the pollution to the wafer 500. The side of the housing 100 is provided with a feed inlet 130, and when the robot arm transports the wafer 500, the wafer 500 enters the interior of the housing 100 through the feed inlet 130 on the side of the housing 100.
An exhaust duct 900 is provided at a side of the casing 100, and the exhaust duct 900 communicates with the casing 100 to exhaust the gas in the casing 100.
The first nozzle mechanism 700 facing the top surface of the wafer 500 sprays DI water onto the top surface of the wafer 500, because the three processes of chemical etching, megasonic water cleaning, and nitrogen drying need to be switched to spray DI water (i.e., deionized water) onto the surface of the wafer 500 for rinsing. The first nozzle mechanism 700 includes a first fixing base 710 and a first nozzle 720; the first fixing seat 710 is installed on the inner wall of the casing 100; the first nozzle 720 has one end mounted on the first fixing base 710 and the other end extending obliquely downward to above the wafer 500. Wherein, the first nozzle 720 is configured as an elongated cylindrical structure, and the first nozzle 720 passes through the relief hole of the liquid medicine collecting housing 110 and then extends to above the wafer 500. Further, the first nozzle 720 is connected with the first fixing seat 710 through a rotating shaft 730, and the first nozzle 720 can rotate around the axis of the rotating shaft 730 to adjust the spraying direction of the first nozzle 720. Since the first nozzle mechanism 700, the first swing arm 200, the second swing arm 300, and the third swing arm 400 all spray the chemical solution onto the top surface of the wafer 500, the first nozzle mechanism 700, the first swing arm 200, the second swing arm 300, and the third swing arm 400 are uniformly arranged around the center of the wafer 500 to prevent the movement interference.
The wafer 500 is only etched on the top surface, and when the top surface of the wafer 500 is chemically etched, megasonically cleaned, and dried with nitrogen gas, DI water is sprayed to the bottom surface of the wafer 500 to isolate the chemical solution from megasonically water, or nitrogen gas is sprayed to dry the bottom surface of the wafer 500, and thus the second nozzle mechanism 800 facing the bottom surface of the wafer 500 is provided to spray DI water or nitrogen gas to the bottom surface of the wafer 500. It should be noted that two second nozzle mechanisms 800 are uniformly arranged around the center of the wafer 500, and respectively spray DI water and nitrogen gas onto the bottom surface of the wafer 500. The second nozzle mechanism 800 includes a second fixing base 810 and a second nozzle 820; the second fixing base 810 is mounted on the inner wall of the housing 100; one end of the second nozzle 820 is mounted on the second fixing base 810, and the other end extends obliquely upward to a position below the wafer 500.
Example 2
This embodiment provides a wet chemical etching process using the wet chemical etching apparatus, please refer to fig. 1 to 5. FIG. 1 is a schematic structural diagram of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 2 is a top view of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 3 is a cross-sectional view of a wet chemical etching apparatus according to an embodiment of the present invention; FIG. 4 is a schematic structural diagram of a liquid medicine collecting housing in the wet chemical etching apparatus according to an embodiment of the present invention; fig. 5 is a schematic structural diagram of a first swing arm in the wet chemical etching apparatus according to the embodiment of the present invention.
The wet chemical etching process comprises the following steps:
the liquid medicine collecting housing 110 ascends;
the nozzle 210 of the first swing arm 200 rotates to the upper part of the wafer 500 and then sprays the liquid medicine on the top surface of the wafer 500;
the liquid medicine collecting shell 110 descends and exits after collecting liquid medicine residual liquid;
the first nozzle mechanism 700 sprays DI water to the top surface of the wafer 500 to rinse the surface of the wafer 500;
the nozzle 210 of the second swing arm 300 rotates to the position above the wafer 500 and then sprays megasonic water on the top surface of the wafer 500;
the nozzle 210 of the third swing arm 400 rotates above the wafer 500 and then sprays nitrogen gas onto the top surface of the wafer 500.
The wet chemical etching process provided by this embodiment integrates three processes of spraying liquid medicine, spraying megasonic water and spraying nitrogen gas into the same device, and the wafer 500 can complete the three processes of chemical etching, megasonic water cleaning and nitrogen gas drying in the device, so that the transportation process of the wafer 500 among the three processes is omitted, the secondary pollution of the wafer 500 in the transportation process is avoided, and the working efficiency is improved.
In addition, when the first swing arm 200 sprays the liquid medicine onto the top surface of the wafer 500, the lifting assembly 120 drives the liquid medicine collecting housing 110 to ascend, the liquid medicine collecting housing 110 surrounds the outside of the wafer 500, and the liquid medicine residual liquid sprayed onto the top surface of the wafer 500 flows into the liquid medicine collecting housing 110. After the liquid medicine spraying is finished, the lifting assembly 120 drives the liquid medicine collecting housing 110 to descend, and the megasonic water sprayed to the surface of the wafer 500 flows to the outside of the liquid medicine collecting housing 110. The embodiment realizes the separation of the liquid medicine and the megasonic water, and the liquid medicine residual liquid and the megasonic water residual liquid can be recycled after being recycled.
Considering that the wafer 500 only corrodes the top surface, the second nozzle mechanism 800 sprays DI water to the bottom surface of the wafer 500 to protect the bottom surface of the wafer 500 from corrosion when performing chemical corrosion, megasonic water cleaning, and DI water cleaning on the top surface of the wafer 500. When the top surface of the wafer 500 is dried with nitrogen gas, the second nozzle mechanism 800 sprays nitrogen gas to the bottom surface of the wafer 500.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (6)

1. A wet chemical etching device is characterized by comprising a first swing arm, a second swing arm and a third swing arm;
the first swing arm, the second swing arm and the third swing arm enclose a working space for containing wafers;
the first swing arm, the second swing arm and the third swing arm are respectively used for spraying liquid medicine, megasonic water and nitrogen to the top surface of the wafer;
the first swing arm, the second swing arm and the third swing arm are arranged around the center of the wafer, nozzles are arranged at the end parts of the first swing arm, the second swing arm and the third swing arm, and the respective nozzles can rotate to the position above the wafer;
the nozzle is in transmission connection with a nozzle rotating mechanism, and the nozzle rotating mechanism is used for driving the nozzle to rotate;
the wet chemical etching device further comprises: the device comprises a bearing mechanism, a first nozzle mechanism and a second nozzle mechanism;
the bearing mechanism is positioned in the working space and comprises an object stage and a motor, and the object stage is connected with an output shaft of the motor and can rotate around the axis of the object stage; the object stage is used for supporting the wafer;
the nozzles of the first nozzle mechanism face the top surface of the wafer and are used for spraying DI water to the top surface of the wafer;
the nozzles of the second nozzle mechanism face the bottom surface of the wafer and are used for spraying DI water or the nitrogen to the bottom surface of the wafer, and an included angle is formed between the nozzle axis of the second nozzle mechanism and the axis of the objective table.
2. The wet chemical etching device according to claim 1, further comprising a liquid medicine collecting housing located in the working space, wherein the bottom of the liquid medicine collecting housing is connected with the lifting assembly; the liquid medicine collecting shell can be driven by the lifting assembly to lift so as to collect and isolate liquid medicine sprayed to the surface of the wafer.
3. The wet chemical etching apparatus of claim 2, wherein the lifting assembly includes a connecting rod and a cylinder slide;
one end of the connecting rod is connected with the bottom of the liquid medicine collecting shell, and the other end of the connecting rod is connected with the movable end of the cylinder sliding table;
the fixed end of the cylinder sliding table is arranged at the bottom of the device;
the movable end of the cylinder sliding table can move along the length direction of the connecting rod and drive the liquid medicine collecting shell to lift.
4. The wet chemical etching device of claim 1, further comprising a housing capable of accommodating the first swing arm, the second swing arm and the third swing arm, wherein a feed port is formed in a side surface of the housing.
5. The wet chemical etching apparatus of claim 1, wherein the stage is configured as a vacuum chuck.
6. A wet chemical etching process using the wet chemical etching apparatus as claimed in any one of claims 2 to 3, comprising:
the liquid medicine collecting shell ascends;
the nozzle of the first swing arm rotates to the position above the wafer and then sprays the liquid medicine on the top surface of the wafer;
the liquid medicine collecting shell descends and withdraws after collecting liquid medicine residual liquid;
a nozzle of the second swing arm rotates to the position above the wafer, and then the megasonic water is sprayed on the top surface of the wafer;
and spraying the nitrogen to the top surface of the wafer after the nozzle of the third swing arm rotates to the position above the wafer.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101414549A (en) * 2007-10-17 2009-04-22 株式会社荏原制作所 Substrate cleaning apparatus
CN101773917A (en) * 2010-03-05 2010-07-14 上海集成电路研发中心有限公司 Silicon slice cleaning device and method
CN104014497A (en) * 2013-02-28 2014-09-03 细美事有限公司 Nozzle assembly, substrate treatment apparatus, and method of treating substrate
CN205015612U (en) * 2015-09-06 2016-02-03 中芯国际集成电路制造(北京)有限公司 Shoot out device
CN108475630A (en) * 2016-01-25 2018-08-31 株式会社斯库林集团 Substrate board treatment and substrate processing method using same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63233528A (en) * 1987-03-20 1988-09-29 Mitsubishi Electric Corp Development of semiconductor wafer
JP2017536692A (en) * 2014-10-31 2017-12-07 ビーコ プリジション サーフェイス プロセシング エルエルシー Apparatus and method for performing a wet etch process
CN109037111B (en) * 2015-02-25 2022-03-22 株式会社思可林集团 Substrate processing apparatus
TWI666684B (en) * 2015-11-16 2019-07-21 日商東京威力科創股份有限公司 Coating film forming method, coating film forming device and memory medium
CN106711062B (en) * 2015-11-17 2019-07-12 沈阳芯源微电子设备股份有限公司 A kind of realization device and its implementation of technological reaction cavity airflow field
CN206059349U (en) * 2016-05-13 2017-03-29 上海华力微电子有限公司 The medicine liquid spray device of monolithic wet work

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101414549A (en) * 2007-10-17 2009-04-22 株式会社荏原制作所 Substrate cleaning apparatus
CN101773917A (en) * 2010-03-05 2010-07-14 上海集成电路研发中心有限公司 Silicon slice cleaning device and method
CN104014497A (en) * 2013-02-28 2014-09-03 细美事有限公司 Nozzle assembly, substrate treatment apparatus, and method of treating substrate
CN205015612U (en) * 2015-09-06 2016-02-03 中芯国际集成电路制造(北京)有限公司 Shoot out device
CN108475630A (en) * 2016-01-25 2018-08-31 株式会社斯库林集团 Substrate board treatment and substrate processing method using same

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