CN112845298B - Nitrogen protection cleaning method for nano wafer product - Google Patents
Nitrogen protection cleaning method for nano wafer product Download PDFInfo
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- CN112845298B CN112845298B CN202011635035.4A CN202011635035A CN112845298B CN 112845298 B CN112845298 B CN 112845298B CN 202011635035 A CN202011635035 A CN 202011635035A CN 112845298 B CN112845298 B CN 112845298B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
- B08B3/022—Cleaning travelling work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
- B08B3/123—Cleaning travelling work, e.g. webs, articles on a conveyor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Abstract
The invention discloses a nitrogen protection cleaning method for a nano wafer product, which comprises the following steps: moving a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen nozzle to the position right above a wafer, and adjusting the distance between the atomization cleaning spray head and the wafer to be 14-30 mm; secondly, the wafer bearing mechanism drives the wafer to rotate, an external air source of the nitrogen nozzle supplies air, nitrogen is blown to the surface of the wafer, the liquid cleaning spray head and the atomization cleaning spray head are sequentially opened, cleaning liquid is sprayed to the surface of the wafer, and the surface of the wafer is cleaned; and step three, after the cleaning is finished, the atomization cleaning nozzle, the liquid cleaning nozzle and the nitrogen nozzle are sequentially closed and then moved away from the position right above the wafer. According to the invention, nitrogen is blown to form a gas protective film on the surface of the mist water, so that the surface energy of the liquid is maintained, the agglomeration of liquid drop molecules is prevented, and the cleaning effect of the nano wafer is ensured.
Description
Technical Field
The invention belongs to the technical field of semiconductor cleaning equipment, and particularly relates to a nitrogen protection cleaning method for a nano wafer product.
Background
In the field of semiconductor cleaning, for high-level wafer products, such as related wafer products related to products such as logic integrated circuits, storage devices, power devices, etc., during the manufacturing process, various complicated processes such as photolithography, wet process, deposition, oxidation, etc. are performed, however, after each stage of process is finished, the subsequent processes need to be performed through a cleaning process, so as to ensure the accuracy and reproducibility of the subsequent processes.
Especially for the wafer cleaning wet process required by 65-14nm pitch and the wafer product with the size of 14nm or less and extending to 5nm pitch, the core problem of the wafer wet process is that the liquid remains in the microstructure of the nano wafer under the effect of the size effect. The related structures such as storage-type products DRAM NAND have different metallization microstructures and high aspect ratio patterning distributions, and if a general cleaning method is used, the surface of the nano wafer cannot be cleaned well due to the aggregation of liquid particles, which is a problem to be solved at present.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a nitrogen protection cleaning method for a nano wafer product, which can generate small-particle atomized water to clean the surface of a wafer and ensure the cleaning effect of the nano wafer.
In order to realize the purpose, the invention adopts the following technical scheme:
the invention provides a nitrogen protection cleaning method for a nano wafer product, which comprises the following steps of moving a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen nozzle to the position right above a wafer, and adjusting the distance between the atomization cleaning spray head and the wafer to be 14-30 mm;
secondly, the wafer is driven to rotate by the wafer bearing mechanism, an external air source of the nitrogen nozzle supplies air to blow nitrogen to the surface of the wafer, the liquid cleaning spray head and the atomization cleaning spray head are sequentially opened, and cleaning liquid is sprayed to the surface of the wafer to clean the surface of the wafer;
and step three, after the cleaning is finished, the atomization cleaning spray head, the liquid cleaning spray head and the nitrogen nozzle are sequentially closed and then moved away from the position right above the wafer.
Preferably, in the first step, the distance between the atomizing and cleaning nozzle and the wafer is reduced as the pore diameter on the surface of the wafer is reduced.
As a preferred technical scheme, a specially-made wafer cleaning device is adopted and comprises a wafer bearing mechanism and a wafer cleaning mechanism, wherein the wafer bearing mechanism is used for placing a wafer, and the wafer is fixed on the surface of the wafer bearing mechanism and is driven by the wafer bearing mechanism to rotate;
the wafer cleaning mechanism comprises a driving mechanism, a cleaning shell, a liquid cleaning nozzle, an atomization cleaning nozzle, a nitrogen nozzle and an ultrasonic oscillation sheet, wherein the cleaning shell is arranged on one side of the wafer bearing mechanism, the cleaning shell is connected with the driving mechanism and driven by the driving mechanism to realize lifting motion and rotary motion, the liquid cleaning nozzle, the atomization cleaning nozzle and the nitrogen nozzle are controlled to be positioned or separated right above the wafer, a liquid cleaning pipeline, an atomization cleaning pipeline and a gas conveying pipeline are arranged inside the cleaning shell, one end of the liquid cleaning pipeline is connected with the liquid cleaning nozzle, the other end of the liquid cleaning pipeline is connected with an external liquid supply pipeline, one end of the atomization cleaning pipeline is connected with the atomization cleaning nozzle, the other end of the atomization cleaning pipeline is connected with the external liquid supply pipeline, the atomization cleaning nozzle is connected with the ultrasonic oscillation sheet, the ultrasonic oscillation piece is connected with an external power supply, one end of the gas conveying pipeline is connected with the nitrogen nozzle, the other end of the gas conveying pipeline is connected with a nitrogen gas supply pipeline, and the nitrogen gas nozzle faces the atomization cleaning sprayer.
As the preferred technical scheme, wash the casing and be L type structure, its set up in the outside one end of wafer bearing mechanism is connected actuating mechanism, actuating mechanism includes lift cylinder and revolving cylinder, the stiff end of lift cylinder is installed on a base, revolving cylinder's stiff end is connected the output of lift cylinder, the end connection of washing the casing revolving cylinder's output.
As preferred technical scheme, a mounting panel is connected to the output of lift cylinder, on a mounting panel slidable mounting line type track, revolving cylinder's stiff end install in on the mounting panel, revolving cylinder's output is provided with drive gear, the tip of wasing the casing is provided with driven gear, drive gear with driven gear passes through rack toothing and connects.
As a preferred technical scheme, the liquid cleaning spray head, the atomization cleaning spray head and the nitrogen spray head are distributed in a triangular shape, and the atomization cleaning spray head is an umbrella-shaped spray head.
Preferably, the liquid cleaning nozzle faces the center of a triangle formed by the liquid cleaning nozzle, the atomization cleaning nozzle and the nitrogen nozzle.
As a preferable technical scheme, the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle and the wafer are both smaller than the distance between the atomization cleaning nozzle and the wafer.
As a preferred technical scheme, the circle center of the atomizing cleaning nozzle coincides with the circle center of the wafer.
According to a preferable technical scheme, the liquid sprayed by the liquid cleaning nozzle and the liquid sprayed by the atomization cleaning nozzle are mixed liquid of ammonia water and hydrogen peroxide. Compared with the prior art, the invention has the following technical effects:
(1) according to the invention, the ultrasonic oscillation piece is arranged at the position of the atomization cleaning nozzle, the cleaning liquid drop can generate refined atomized cleaning liquid after receiving capacity oscillation, and a gas protective film is formed on the surface of atomized water by adopting nitrogen blowing, so that the surface energy of the liquid is maintained, the liquid drop molecules are prevented from agglomerating, and the cleaning effect of the nano wafer is ensured.
(2) The distance between the atomizing cleaning nozzle and the wafer is controlled through the driving mechanism, the height of the nozzle is adjusted according to different cleaning requirements, the use is more flexible, and the cleaning effect is ensured.
(3) The atomizing cleaning nozzle adopts the umbrella-shaped nozzle, the spraying range of the atomized cleaning liquid is enlarged, the liquid is screwed out and diffused along with the rotation of the wafer, the effective spraying radius is increased, and the cleaning effect is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a nitrogen protection cleaning apparatus for nano-wafer products according to one embodiment of the present invention.
FIG. 2 is a second schematic structural diagram of the nitrogen protection cleaning apparatus for nano-wafer products according to the present invention.
FIG. 3 is a schematic diagram of a cleaning housing of the nitrogen protection cleaning apparatus for nano-wafer products according to the present invention.
FIG. 4 is a second schematic view of the structure of the cleaning housing of the nitrogen protection cleaning apparatus for nano-wafer products according to the present invention.
FIG. 5 is a schematic view of a showerhead of the nitrogen protection cleaning apparatus for nano-wafer products according to the present invention.
FIG. 6 is a schematic view showing the diffusion of the cleaning solution on the surface of the nano-wafer according to the present invention.
FIG. 7 is a schematic diagram of the formation of a mist of cleaning solution according to the present invention.
Wherein the reference numerals are specified as follows: the device comprises a cleaning shell 1, an atomization cleaning spray head 2, a liquid cleaning spray head 3, a nitrogen nozzle 4, an ultrasonic oscillation sheet 5, a linear track 6, a lifting cylinder 7, a mounting plate 8, a rotary cylinder 9, a driving gear 10, a driven gear 11, a rack 12, an atomization cleaning pipeline 13, a liquid cleaning pipeline 14 and a gas conveying pipeline 15.
Detailed Description
In the description of the present invention, it is to be understood that the terms "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are merely for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
Example 1
The embodiment provides a nitrogen protection cleaning device for a nano wafer product, which comprises a wafer bearing mechanism and a wafer cleaning mechanism. The wafer bearing mechanism can be formed by various structures, for example, the wafer is adsorbed on the surface of the wafer bearing mechanism by using bernoulli, and the partial structure can be rotated according to the use requirement by a person skilled in the art, which is not described herein.
Wafer wiper mechanism includes actuating mechanism, wash casing 1, liquid cleaning nozzle 3, atomizing cleaning nozzle 2, nitrogen nozzle 4 and ultrasonic oscillation piece 5, the one end of washing casing 1 sets up in the one end that the wafer bore the weight of the mechanism, wash casing 1 and connect actuating mechanism, actuating mechanism can drive and wash casing 1 up-and-down motion and rotary motion, be used for washing nozzle 3 with liquid, atomizing cleaning nozzle 2, nitrogen nozzle 4 adjusts to the wafer directly over or with liquid cleaning nozzle 3, atomizing cleaning nozzle 2, nitrogen nozzle is transferred from to the outside of wafer. The whole cleaning shell 1 is of an L-shaped structure, and the liquid cleaning spray head 3, the atomization cleaning spray head 2 and the nitrogen spray head are arranged at one end of the cleaning shell 1. The inside of washing casing 1 is provided with liquid cleaning pipeline 14, atomizing cleaning pipeline 13 and gas transmission pipeline 15, and liquid cleaning shower nozzle 3 is connected to liquid cleaning pipeline 14's one end, and the outside liquid supply pipeline is connected to the other end. The one end of atomizing washing pipeline 13 is connected atomizing washing shower nozzle 2, and outside liquid supply pipeline is connected to the other end, and atomizing washing shower nozzle 2 is connected ultrasonic oscillation piece 5, and ultrasonic oscillation piece 5 is connected external power source, through the atomizing of ultrasonic oscillation piece 5 realization to atomizing washing shower nozzle 2 interior washing liquid, produces the vaporific washing liquid of tiny particle, washs nanometer wafer effectively. One end of the gas conveying pipeline 15 is connected with the nitrogen nozzle 4, the other end of the gas conveying pipeline is connected with the nitrogen gas supply channel, the nitrogen nozzle 4 faces to the position right below the atomization cleaning spray head 2, through blowing of nitrogen gas, the surface energy of liquid drops can be guaranteed, the liquid drops are prevented from being agglomerated, and a nanoscale water film is formed on the surfaces of the atomized liquid drops.
The end, outside the wafer bearing mechanism, of the cleaning shell 1 is connected with a driving mechanism, the driving mechanism comprises a lifting cylinder 7, a rotating cylinder 9, an installation plate 8 and a linear rail 6, the fixed end of the lifting cylinder 7 is installed on a base and provides a supporting point for the action of the lifting cylinder 7, the output end of the lifting cylinder 7 is connected with a lifting plate, and the lifting plate is slidably installed on the linear rail 6 and can move up and down along the linear rail 6. The fixed section of the rotary cylinder 9 is arranged on the mounting plate 8, the output end of the rotary cylinder 9 is provided with a driving gear 10, the end part of the cleaning shell 1 is provided with a driven gear 11, and the driving gear 10 is meshed with the driven gear 11 through a rack 12. The lifting cylinder 7 acts to drive the mounting plate 8 to move up and down to drive the cleaning shell 1 to move up and down, and the output end of the rotary cylinder 9 drives the cleaning shell 1 to rotate through the transmission of the gear rack 12, so that the spray head is driven to move.
In this embodiment, the liquid cleaning nozzle 3, the atomizing cleaning nozzle 2, and the nitrogen nozzle are distributed in a triangle, and the liquid cleaning nozzle 3 faces the projection of the triangle on the wafer. The atomizing and cleaning nozzle 2 is an umbrella-shaped nozzle, and the circle center of the atomizing and cleaning nozzle 2 is coincided with the circle center of the wafer. The sprayer adopting the structure is arranged, the cleaning liquid diffusion ring can be formed on the surface of the wafer by matching with the rotation of the wafer, the spraying radius of the cleaning liquid is increased, the cleaning effect of the wafer is improved, and the liquid sprayed by the liquid cleaning sprayer 3 and the atomization cleaning sprayer 2 is mixed liquid of ammonia water and hydrogen peroxide.
The distance between the atomization cleaning nozzle 2 and the wafer is 14-30 mm, and the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle 3 and the wafer are both smaller than the distance between the atomization cleaning nozzle 2 and the wafer. In the embodiment, the distance between the atomizing cleaning nozzle 2 and the wafer is small, and the protection effect of nitrogen is combined, so that the condition that vaporific micromolecule cleaning liquid is mutually gathered to form macromolecular liquid drops can be avoided, and the cleaning effect of the wafer is ensured.
Example 2
The embodiment provides a nitrogen protection cleaning method for a nano wafer product, which comprises the following steps:
moving a liquid cleaning spray head 3, an atomization cleaning spray head 2 and a nitrogen nozzle 4 to the position right above a wafer, and adjusting the distance between the atomization cleaning spray head 2 and the wafer to be 14-30 mm; the distance between the atomizing cleaning spray head 2 and the wafer is reduced along with the reduction of the aperture of the surface of the wafer;
secondly, the wafer is driven to rotate by the wafer bearing mechanism, an external air source of the nitrogen nozzle 4 supplies air to blow nitrogen to the surface of the wafer, the liquid cleaning nozzle 3 and the atomization cleaning nozzle 2 are sequentially opened, and cleaning liquid is sprayed to the surface of the wafer to clean the surface of the wafer;
and step three, after the cleaning is finished, the atomization cleaning spray head 2, the liquid cleaning spray head 3 and the nitrogen nozzle 4 are sequentially closed and then moved away from the position right above the wafer.
Although the present invention has been described in detail with respect to the above embodiments, it will be understood by those skilled in the art that modifications or improvements based on the disclosure of the present invention may be made without departing from the spirit and scope of the invention, and that such modifications and improvements are within the spirit and scope of the invention.
Claims (8)
1. A nitrogen protection cleaning method for a nano wafer product is characterized in that a specially-made wafer cleaning device is adopted and comprises a wafer bearing mechanism and a wafer cleaning mechanism, wherein the wafer bearing mechanism is used for placing a wafer, and the wafer is fixed on the surface of the wafer bearing mechanism and driven by the wafer bearing mechanism to rotate;
the wafer cleaning mechanism comprises a driving mechanism, a cleaning shell, a liquid cleaning nozzle, an atomization cleaning nozzle, a nitrogen nozzle and an ultrasonic oscillation sheet, wherein the cleaning shell is arranged on one side of the wafer bearing mechanism, the cleaning shell is connected with the driving mechanism and driven by the driving mechanism to realize lifting motion and rotary motion, the liquid cleaning nozzle, the atomization cleaning nozzle and the nitrogen nozzle are controlled to be positioned or separated right above the wafer, a liquid cleaning pipeline, an atomization cleaning pipeline and a gas conveying pipeline are arranged inside the cleaning shell, one end of the liquid cleaning pipeline is connected with the liquid cleaning nozzle, the other end of the liquid cleaning pipeline is connected with an external liquid supply pipeline, one end of the atomization cleaning pipeline is connected with the atomization cleaning nozzle, the other end of the atomization cleaning pipeline is connected with the external liquid supply pipeline, and the atomization cleaning nozzle is connected with the ultrasonic oscillation sheet, the ultrasonic oscillation sheet is connected with an external power supply, one end of the gas conveying pipeline is connected with the nitrogen nozzle, the other end of the gas conveying pipeline is connected with a nitrogen gas supply pipeline, and the nitrogen gas nozzle faces the atomization cleaning spray head; the liquid cleaning spray head, the atomization cleaning spray head and the nitrogen spray head are distributed in a triangular shape, and the atomization cleaning spray head is an umbrella-shaped spray head;
the method comprises the following steps:
moving a liquid cleaning spray head, an atomization cleaning spray head and a nitrogen nozzle to the position right above a wafer, and adjusting the distance between the atomization cleaning spray head and the wafer to be 14-30 mm;
secondly, the wafer is driven to rotate by the wafer bearing mechanism, an external air source of the nitrogen nozzle supplies air to blow nitrogen to the surface of the wafer, the liquid cleaning spray head and the atomization cleaning spray head are sequentially opened, and cleaning liquid is sprayed to the surface of the wafer to clean the surface of the wafer;
and step three, after the cleaning is finished, the atomization cleaning nozzle, the liquid cleaning nozzle and the nitrogen nozzle are sequentially closed and then moved away from the position right above the wafer.
2. The nitrogen-shielded cleaning method for nano-wafer products as claimed in claim 1, wherein in the first step, the distance between the atomizing cleaning nozzle and the wafer is reduced as the pore diameter on the surface of the wafer is reduced.
3. The nitrogen-protected cleaning method for nano wafer products as claimed in claim 2, wherein the cleaning housing is an L-shaped structure, and one end of the cleaning housing disposed outside the wafer supporting mechanism is connected to the driving mechanism, the driving mechanism includes a lifting cylinder and a rotating cylinder, the fixed end of the lifting cylinder is mounted on a base, the fixed end of the rotating cylinder is connected to the output end of the lifting cylinder, and the end of the cleaning housing is connected to the output end of the rotating cylinder.
4. The nitrogen protection cleaning method for nano wafer products as claimed in claim 3, wherein the output end of the lifting cylinder is connected with a mounting plate, the mounting plate is slidably mounted on a linear rail, the fixed end of the rotating cylinder is mounted on the mounting plate, the output end of the rotating cylinder is provided with a driving gear, the end of the cleaning housing is provided with a driven gear, and the driving gear and the driven gear are connected through rack meshing.
5. The method as claimed in claim 4, wherein the liquid purge nozzle faces the center of a triangle formed by the liquid purge nozzle, the atomizing purge nozzle, and the nitrogen purge nozzle.
6. The nitrogen-protected cleaning method for nano-wafer products as claimed in claim 5, wherein the distance between the nitrogen nozzle and the wafer and the distance between the liquid cleaning nozzle and the wafer are both smaller than the distance between the atomization cleaning nozzle and the wafer.
7. The nitrogen-protected cleaning method for nano-wafer products as claimed in claim 1, wherein a center of the atomizing cleaning nozzle coincides with a center of the wafer.
8. The nitrogen protection cleaning method for nano wafer products as claimed in claim 1, wherein the liquid sprayed from the liquid cleaning nozzle and the atomization cleaning nozzle is a mixed solution of ammonia water and hydrogen peroxide.
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| JP2012114282A (en) * | 2010-11-25 | 2012-06-14 | Sumco Corp | Method for manufacturing soi wafer and system for bonding wafers |
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