JP6545511B2 - Processing unit - Google Patents

Description

  Embodiments of the present invention relate to a processing apparatus.

  A plurality of semiconductor elements formed on a semiconductor substrate such as a wafer are divided into a plurality of semiconductor chips by dicing along a dicing region provided on the semiconductor substrate. When a metal film to be an electrode of a semiconductor element or a resin film such as a die bonding film is formed on one surface of a semiconductor substrate, the metal film or resin film in the dicing region also needs to be removed in dicing. .

  As a method of removing the metal film or the resin film, for example, there is a method of removing the semiconductor substrate and the metal film or the resin film simultaneously by blade dicing. In this case, shape abnormalities such as protrusions (burrs) are likely to occur on the metal film or the resin film. When the shape abnormality of the metal film or the resin film occurs, it is determined that the appearance inspection of the semiconductor chip is defective or the bonding failure of the bed and the semiconductor chip is generated, which causes a problem of lowering the product yield.

JP 2008-141135 A

  The problem to be solved by the present invention is to provide a processing apparatus capable of suppressing the shape abnormality when processing a metal film or a resin film.

The processing apparatus according to the embodiment includes a stage on which a sample can be placed, a rotation mechanism that rotates the stage, and carbon dioxide capable of removing a metal film or a resin film intentionally formed on the sample on the sample. A first nozzle for injecting a gas containing particles , and the same side as the first nozzle with respect to the sample , wherein water is supplied to the rotation center of the sample before the injection of the particles ; A second nozzle for forming a water film over the entire surface of the sample ; and a gap is formed in the water film by the force of the gas containing the particles jetted from the first nozzle; a metal film or the resin film Ru expose the.

BRIEF DESCRIPTION OF THE DRAWINGS The schematic diagram of the processing apparatus of 1st Embodiment. FIG. 5 is a schematic process cross-sectional view illustrating the method of manufacturing the device of the first embodiment. Explanatory drawing of an effect | action of the processing apparatus of 1st Embodiment. The schematic diagram of the processing apparatus of 2nd Embodiment. The schematic diagram of the processing apparatus of 3rd Embodiment. The schematic diagram of the processing apparatus of the modification of 3rd Embodiment. The schematic diagram of the processing apparatus of 4th Embodiment. The schematic diagram of the processing apparatus of 5th Embodiment. The schematic diagram of the processing apparatus of 6th Embodiment. The schematic diagram of the processing apparatus of 7th Embodiment. The schematic diagram of the processing apparatus of 8th Embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following description, the same reference numerals are given to the same members and the like, and the description of the members and the like which have been described once is omitted as appropriate.

First Embodiment
The processing apparatus according to the present embodiment includes a stage on which a sample can be placed, a rotation mechanism that rotates the stage, a first nozzle that ejects a substance onto the sample, and a second nozzle that supplies liquid to the rotation center of the sample. And. The apparatus further includes a moving mechanism that relatively moves the stage and the first nozzle in a direction perpendicular to the rotation axis of the stage, and a control unit that controls the moving mechanism.

  The processing apparatus of the present embodiment is, for example, a semiconductor manufacturing apparatus used for dicing of a semiconductor substrate. For example, it is used in the case of removing at the time of dicing a metal film which is provided on one surface of a semiconductor substrate and becomes an electrode or the like of a semiconductor element.

  Further, in the present embodiment, the case where the substance jetted to the metal film is particles containing carbon dioxide will be described as an example. The particles containing carbon dioxide (hereinafter, also simply described as carbon dioxide particles) are particles containing carbon dioxide as a main component. In addition to carbon dioxide, for example, unavoidable impurities may be contained.

  FIG. 1 is a schematic view of a processing apparatus of the present embodiment. FIG. 1 (a) is a schematic view including a cross-sectional structure of the apparatus, and FIG. 1 (b) is a top view of a stage portion.

  The semiconductor manufacturing apparatus according to this embodiment includes a stage 10, a support shaft 12, a rotation mechanism 14, a first nozzle 16, a movement mechanism (first movement mechanism) 18, a control unit 20, a processing chamber 22, and a second nozzle 26. Equipped with

  The stage 10 is configured to be capable of mounting the sample W to be processed. The stage 10 mounts, for example, a semiconductor wafer bonded to a dicing sheet fixed to a dicing frame.

  The stage 10 is fixed to the support shaft 12. The rotation mechanism 14 rotates the stage 10. The rotation mechanism 14 includes, for example, a motor and a bearing that rotatably holds the support shaft 12. The stage 10 rotates around the rotation axis C by the rotation mechanism 14.

  From the first nozzle 16, carbon dioxide particles for removing the metal film are jetted. The sample W is separated, for example, by ejecting carbon dioxide particles to remove the metal film. Carbon dioxide particles are solid carbon dioxide. Carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, pellet, powder, sphere or irregular shape.

  The first nozzle 16 is connected to, for example, a cylinder of liquefied carbon dioxide gas (not shown). The liquefied carbon dioxide gas in the cylinder is solidified by adiabatic expansion to produce carbon dioxide particles. The first nozzle 16 is connected to, for example, a source of nitrogen gas or compressed air (not shown). The generated carbon dioxide particles are jetted from the first nozzle 16 toward the sample W mounted on the stage 10 together with, for example, nitrogen gas or compressed air.

  The diameter of the first nozzle 16 is, for example, not less than φ1 mm and not more than φ3 mm. The distance between the first nozzle 16 and the surface of the sample W is set to, for example, 10 mm or more and 20 mm or less.

  The injection direction of the carbon dioxide particles of the first nozzle 16 is, for example, substantially perpendicular to the surface of the stage 10.

  The moving mechanism 18 linearly moves the stage 10 and the first nozzle 16 in a direction perpendicular to the rotation axis C of the stage 10, as shown by the arrow in FIG. For example, the first nozzle 16 is moved to repeatedly scan between the rotation axis C of the stage 10 and the end of the sample W. In FIG. 1, the case where not the stage 10 but the 1st nozzle 16 is moved by the moving mechanism 18 is shown.

  The moving mechanism 18 is not particularly limited as long as it can move the first nozzle 16 linearly with respect to the stage 10. For example, a belt drive shuttle mechanism combined with a belt, a pulley, and a motor for rotating the pulley is used. Also, for example, a combination of a rack and pinion mechanism and a motor is used. Also, for example, a linear motor is used.

  The moving mechanism 18 may be a mechanism that moves the stage 10 with respect to the fixed first nozzle 16 instead of the first nozzle 16.

  The control unit 20 controls the moving mechanism 18. For example, the scanning range of the first nozzle 16 with respect to the stage 10, the relative velocity of the first nozzle 16 with respect to the stage 10, and the like are controlled to desired values. The control unit 20 may be, for example, hardware such as a circuit board or a combination of hardware and software such as a control program stored in a memory. The control unit 20 may be configured to control the moving mechanism 18 in synchronization with the rotation mechanism 14. Also, for example, the control unit 20 moves the stage 10 and the first nozzle 16 relatively in the direction parallel to the surface of the stage 10.

  The second nozzle 26 supplies the liquid to a region including at least the rotation center of the sample W. The liquid is, for example, water. By supplying water to the rotation center of the rotating sample W, a water film is formed on the entire surface of the sample W.

  The housing 22 incorporates the stage 10, the first nozzle 16, the moving mechanism 18, the second nozzle 26, and the like. The housing 22 protects the stage 10, the first nozzle 16, the moving mechanism 18, the second nozzle 26, and the like, and prevents the processing of the sample W from being affected by the external environment.

  Next, an example of a method of manufacturing a semiconductor device using the semiconductor manufacturing apparatus of the present embodiment will be described. Hereinafter, a case where a semiconductor device to be manufactured is a vertical power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) using silicon (Si) provided with metal electrodes on both sides of the semiconductor device will be described as an example.

  FIG. 2 is a schematic cross-sectional process view showing a method of manufacturing the device of the present embodiment.

  First, a base region of a vertical MOSFET (semiconductor element) on the surface side of a silicon substrate (semiconductor substrate) 30 provided with a first surface (hereinafter also referred to as a front surface) and a second surface (hereinafter also referred to as a back surface) A pattern of a source region, a gate insulating film, a gate electrode, a source electrode and the like is formed. Thereafter, a protective film is formed on the uppermost layer. The protective film is, for example, a resin film such as polyimide, or an inorganic insulating film such as a silicon nitride film or a silicon oxide film. It is desirable that the silicon substrate 30 be exposed on the surface of the dicing area provided on the front side.

  Next, a support substrate 32 is attached to the surface side of the silicon substrate 30 (FIG. 2A). The support substrate 32 is, for example, quartz glass.

  Next, the back side of the silicon substrate 30 is removed by grinding to thin the silicon substrate 30. Thereafter, a metal film 34 is formed on the back surface side of the silicon substrate 30 (FIG. 2B).

  The metal film 34 is a drain electrode of the MOSFET. The metal film 34 is, for example, a laminated film of different metals. The metal film 34 is, for example, a laminated film of aluminum / titanium / nickel / gold from the back surface side of the silicon substrate 30. The metal film 34 is formed, for example, by sputtering.

  Next, the resin sheet 36 is attached to the back side of the silicon substrate 30. The resin sheet 36 is a so-called dicing sheet. The resin sheet 36 is fixed to, for example, a metal frame 38. The resin sheet 36 is adhered to the surface of the metal film 34. Thereafter, the support substrate 32 is peeled off from the silicon substrate 30 (FIG. 2C).

  Next, along the dicing region provided on the front side of the silicon substrate 30, a groove 40 is formed in the silicon substrate 30 such that the metal film 34 on the back side is exposed from the front side (FIG. 2D). Here, the dicing area is a planned area having a predetermined width for dividing the semiconductor chip by dicing, and is provided on the surface side of the silicon substrate 30. The pattern of the semiconductor element is not formed in the dicing region. The dicing regions are provided, for example, in a lattice form on the surface side of the silicon substrate 30.

The groove 40 is formed, for example, by plasma etching. The plasma etching is a so-called Bosch process in which, for example, an isotropic etching step using F-based radical, a protective film forming step using CF ₄ -based radical, and anisotropic etching using F-based ion are repeated.

  The groove 40 is preferably formed by etching the entire surface with the protective film on the surface side of the silicon substrate 30 as a mask. According to this method, since lithography is not used, simplification of the manufacturing process and cost reduction are possible.

  Next, the resin sheet 42 is attached to the surface side of the silicon substrate 30. The resin sheet 42 is a so-called dicing sheet. The resin sheet 42 is fixed to, for example, a metal frame 44. The resin sheet 42 is adhered to the surface of the protective film or the surface of the metal electrode. Thereafter, the resin sheet 36 on the back side is peeled off (FIG. 2 (e)).

  Next, carbon dioxide particles are sprayed to the metal film 34 from the back surface side of the silicon substrate 30 using the semiconductor manufacturing apparatus of FIG. 1 (FIG. 2 (f)). First, the frame 44 is placed on the stage 10 so that the resin sheet 42 comes to the surface of the stage 10 (FIG. 1). Then, the stage 10 is rotated by the rotation drive mechanism 14.

  Water is supplied to the rotation center of the sample W from the second nozzle 26. By supplying water to the rotation center of the rotating sample W, a water film is formed on the entire surface of the sample W. Next, carbon dioxide particles are jetted from the first nozzle 16 while linearly reciprocating the first nozzle 16 in the direction perpendicular to the rotation axis of the stage 10 by the moving mechanism 18.

  The metal film 34 on the back surface side of the groove 40 is removed by spraying carbon dioxide particles. At this time, a space is formed in the water film on the surface of the sample W by the force of the gas containing carbon dioxide particles jetted from the first nozzle 16, and the metal film 34 can be removed. From the viewpoint of stably forming the gap, it is desirable that the injection direction of carbon dioxide particles of the first nozzle 16 be substantially perpendicular to the surface of the stage 10.

  By removing the metal film 34, the silicon substrate 30 is separated into a plurality of MOSFETs. The metal film 34 is removed by being scraped into the groove 40 by carbon dioxide particles (FIG. 2 (g)).

  Carbon dioxide particles are solid carbon dioxide. Carbon dioxide particles are so-called dry ice. The shape of the carbon dioxide particles is, for example, pellet, powder, sphere or irregular shape.

  The carbon dioxide particles are sprayed from the nozzle together with nitrogen gas or compressed air and sprayed on the metal film 34. It is desirable that the carbon dioxide particles have an average particle size of 10 μm to 200 μm. The spot diameter on the surface of the metal film 34 when carbon dioxide particles are sprayed to the metal film 34 is preferably, for example, φ3 mm or more and φ10 mm or less.

  When carbon dioxide particles are sprayed to remove the metal film 34, it is desirable to cover the area of the resin sheet 42 with a mask 46 as shown in FIG. 2 (f). By covering the area of the resin sheet 42 with the mask 46, for example, it is possible to suppress peeling of the resin sheet 42 from the frame 44 due to an impact of carbon dioxide particles. The mask 46 is, for example, metal.

  Thereafter, the resin sheet 42 on the surface side of the silicon substrate 30 is peeled off to obtain a plurality of divided MOSFETs.

  Hereinafter, the operation and effects of the processing apparatus of the present embodiment will be described.

  When the metal film 34 is also formed on the back surface side of the silicon substrate 30 as in a vertical MOSFET, it is also necessary to remove the metal film 34 on the back surface side of the dicing region at the time of dicing. For example, when the semiconductor substrate 30 and the metal film 34 are simultaneously removed from the front surface side by blade dicing, the metal film 34 at the end of the groove 40 in the dicing region curls up on the back surface, generating so-called burrs.

  If burrs of the metal film 34 occur, for example, there is a possibility that the semiconductor chip may not be visually inspected and can not be commercialized. In addition, for example, when the semiconductor chip and the bed are bonded by a bonding material such as solder, the adhesion may be deteriorated at the burr portion, which may cause a bonding failure.

  In the dicing using the semiconductor manufacturing apparatus of the present embodiment, after forming the grooves 40 along the dicing region of the silicon substrate 30, carbon dioxide particles are sprayed to the metal film 34 from the back side, and the portions straddling the groove 40 are formed. The metal film 34 of the Since the removed metal film 34 is scraped off into the groove 40, the generation of burrs is suppressed. In addition, it is possible to remove only the metal film 34 of the groove 40 in a self-aligned manner.

  It is considered that the removal of the metal film 34 in the portion extending over the groove portion 40 is mainly caused by physical impact of carbon dioxide particles. In addition, the removal effect of the metal film 34 by physical impact is promoted by the quenching of the metal film 34 by carbon dioxide particles at low temperature and the addition of the force of the carbon dioxide colliding with the metal film 34 to vaporize and expand. It is considered to be a thing.

  Furthermore, in the semiconductor manufacturing apparatus of the present embodiment, carbon dioxide particles are jetted to the sample on the rotating stage 10. Therefore, carbon dioxide particles can be uniformly ejected onto the surface of the sample as compared to the case where carbon dioxide particles are ejected onto the sample on the fixed stage. Therefore, the metal film 34 can be removed with good uniformity.

  Moreover, in order to inject carbon dioxide particles to the rotating sample, the velocity of the sample is added to the collision velocity of the carbon dioxide particles. Therefore, the speed at which the carbon dioxide particles collide with the metal film 34 is increased. Thus, the metal film 34 can be removed efficiently.

  FIG. 3 is an explanatory view of the operation of the present embodiment. It is the expansion schematic diagram of the area | region where the carbon dioxide particle of the sample W is injected.

  By supplying water from the second nozzle 26 to the rotation center of the sample W, a water coating 60 is formed on the entire surface of the sample W. Due to the force of the gas containing carbon dioxide particles jetted from the first nozzle 16, a gap 62 is formed in the water film 60 on the surface of the sample W.

  In the gap 62, the metal film on the surface of the sample W is exposed, and the carbon dioxide particles collide with the metal film, whereby the metal film is removed. At this time, there is a risk that the particles 64 may scatter from the surface of the sample W. The particles 64 are, for example, fragments of the removed metal film. The particles 64 are, for example, foreign substances adhering to the surface of the metal film.

  The scattered particles 64 may fall to and adhere to the surface of the sample W, or may enter the grooves of the dicing and become residues. Then, for example, when the semiconductor chip and the bed are bonded by a bonding material such as solder, a void or the like may be generated in a portion where the particle 64 exists, and a bonding failure may occur.

  According to this embodiment, the scattered particles 64 adhere to the water film 60 on the surface of the sample W. Therefore, the particles 64 are removed together with the water flowing toward the periphery of the stage 10 by the rotation of the sample W. Therefore, the particles 64 are prevented from adhering directly to the surface of the sample W. Therefore, it can suppress that a joining defect arises.

  As described above, according to the processing apparatus of the present embodiment, it is possible to suppress the shape abnormality of the metal film at the time of dicing. Further, the metal film can be removed uniformly and efficiently at the time of dicing. Furthermore, adhesion of particles can be prevented, and the occurrence of bonding defects can be suppressed.

  In addition, it is possible to use the semiconductor manufacturing apparatus of this embodiment also when manufacturing a semiconductor device provided with a resin film instead of a metal film on the back surface side of the silicon substrate 30. In this case, the resin film is removed instead of the metal film by spraying carbon dioxide particles.

Second Embodiment
The processing apparatus of this embodiment is the same as that of the first embodiment except that it further includes a straightening vane surrounding the stage and a suction mechanism that generates an air flow between the stage and the straightening vane. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 4 is a schematic view of the processing apparatus of the present embodiment. FIG. 4 is a schematic view including the cross-sectional structure of the device.

  The semiconductor manufacturing apparatus of the present embodiment includes an intake port 48, an exhaust port 50, a straightening vane 52, and a suction pump 54.

  The intake port 48 and the exhaust port 50 are provided in the housing 22. The intake port 48 is provided, for example, in the upper part of the housing 22, and the exhaust port 50 is provided, for example, in the lower part of the housing 22.

  The suction pump 54 is connected to the exhaust port 50. The suction pump 54 is, for example, a vacuum pump. The exhaust port 50 and the suction pump 54 are an example of a suction mechanism.

  A straightening vane 52 is provided around the stage 10. The current plate 52 is provided, for example, so that the upper end thereof covers the upper surface of the stage 10. The straightening vane 52 is formed of, for example, metal or resin.

  A gas such as air or nitrogen gas is supplied from the intake port 48 into the housing 22 and sucked by the intake pump 54 to be discharged from the exhaust port 50. The gas flows in the housing 22 from the top to the bottom. A so-called downflow can be formed in the housing 22.

  Furthermore, as indicated by a dotted arrow in FIG. 4, an airflow flowing from the top to the bottom of the housing 22 is formed between the stage 10 and the rectifying plate 52. Therefore, it is possible to effectively eliminate the particles scattered when removing the metal film on the surface of the sample W or the mist containing the particles from the space on the upper surface of the sample W. Therefore, adhesion of particles to the surface of the sample W is further suppressed.

  According to the present embodiment, particles generated when removing the metal film by carbon dioxide particles, or mist containing the particles are discharged from the exhaust port 50 by the flow of the gas in the housing 22. Therefore, adhesion of the removed metal film to the sample W can be suppressed. Therefore, it is possible to further suppress the occurrence of the bonding failure.

Third Embodiment
The processing apparatus of the present embodiment is the same as that of the first embodiment except that a third nozzle for injecting a gas onto the sample is further provided. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 5 is a schematic view of the processing apparatus of the present embodiment. Fig.5 (a) is a schematic diagram containing the cross-section of an apparatus, FIG.5 (b) is a schematic cross section of the 1st and 3rd nozzle.

  The semiconductor manufacturing apparatus of the present embodiment is provided with a third nozzle 28. The third nozzle 28 jets gas to the surface of the sample W. The gas is, for example, air or nitrogen gas.

  The third nozzle 28 is provided, for example, on the outer periphery of the first nozzle 16. By providing the third nozzle 28 and injecting a gas onto the surface of the sample W, the formation of a gap in the water film on the surface of the sample W is promoted.

(Modification)
FIG. 6 is a schematic view of a modified example of the semiconductor manufacturing apparatus of the present embodiment. FIG. 6 is a top view of the stage portion of this modification. The third nozzle 28 differs from the embodiment in that it is provided separately from the first nozzle 16.

  The third nozzle 28 is preferably provided at a position opposite to the rotation direction of the stage 10 with respect to the first nozzle 16. Also in this modification, the formation of a gap in the water film on the surface of the sample W is promoted.

Fourth Embodiment
The processing apparatus of this embodiment is the same as that of the first embodiment except that the fourth nozzle for supplying liquid to the sample is further provided. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 7 is a schematic view of the semiconductor manufacturing apparatus of the present embodiment. FIG. 7 is a top view of the stage portion of the present embodiment.

  The processing apparatus of the present embodiment further includes a fourth nozzle 29 that supplies the liquid to the sample W in addition to the second nozzle 26 that supplies the liquid to the rotation center of the sample W. The liquid is, for example, water.

  By supplying water to the surface of the sample W from the fourth nozzle 29, the time taken for the gap formed in the water film on the surface of the sample W to be closed after removal of the metal film by carbon dioxide particles is shortened. It becomes possible. Therefore, particles are prevented from adhering to the surface of the sample W exposed in the gap.

  The fourth nozzle 29 is preferably provided at a position in the rotational direction of the stage 10 with respect to the first nozzle 16 from the viewpoint of shortening the time until the gap is closed.

Fifth Embodiment
The processing apparatus of this embodiment is the same as that of the first embodiment except further including an inclination mechanism that changes the inclination angle of the first nozzle with respect to the surface of the stage. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 8 is a schematic view of the processing apparatus of the present embodiment. 8 (a) is a schematic view including the cross-sectional structure of the device, and FIG. 8 (b) is a schematic view including the cross-sectional structure in the direction perpendicular to FIG. 8 (a).

  The semiconductor manufacturing apparatus of the present embodiment includes an inclination mechanism 24. The tilt mechanism 24 changes the tilt angle of the first nozzle 16 with respect to the surface of the stage 10. The tilt angle of the tilt mechanism 24 is controlled by, for example, the control unit 20.

  The tilt mechanism 24 is, for example, a rotary tilt mechanism in which a rotary shaft and a stepping motor are combined. It is desirable that the tilt angle of the first nozzle 16 be controlled in such a direction that the impact velocity of carbon dioxide particles on the surface of the rotating sample W is increased as compared to the case where the tilt angle is 90 degrees. Specifically, it is desirable to set the inclination angle of the first nozzle 16 so that the direction of the ejected carbon dioxide particles on the surface of the sample W is opposite to the direction of the rotational movement of the surface of the sample W.

  In the manufacturing method using the semiconductor manufacturing apparatus of the present embodiment, the sample W is placed in a state in which the inclination angle of the first nozzle 16 with respect to the surface of the stage 10 is less than 90 degrees, for example, 15 degrees to 45 degrees. Spray carbon dioxide particles.

  According to this embodiment, the jet of carbon dioxide particles comprises a component in the horizontal direction with respect to the surface of the sample W. Therefore, the metal film and the resin film removed by the carbon dioxide particles are less likely to enter the grooves of the dicing. Accordingly, it can be suppressed that the removed metal film or resin film becomes a residue in the groove. Further, since the collision velocity of the carbon dioxide particles with the sample W can be increased, the metal film 34 can be efficiently removed. Further, the inclination angle can be set to a desired value, and the optimum processing conditions can be set according to the sample W.

  The first nozzle 16 may be fixed to have an inclination angle of less than 90 degrees with respect to the surface of the stage 10. Also with this configuration, it is possible to suppress that the metal film or the resin film removed by the carbon dioxide particles enters the groove of the dicing and becomes a residue. In addition, since the collision velocity of the carbon dioxide particles with the sample W can be increased, the metal film can be efficiently removed.

Sixth Embodiment
The processing apparatus of this embodiment is the same as that of the first embodiment except that it further includes a moving mechanism for relatively moving the stage and the second nozzle in the direction perpendicular to the rotation axis of the stage. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 9 is a schematic view of the processing apparatus of the present embodiment. FIG. 9A is a schematic view including a cross-sectional structure of the apparatus, and FIG. 9B is a top view of a stage portion.

  The semiconductor manufacturing apparatus of the present embodiment is provided with a moving mechanism (second moving mechanism) 62.

  The moving mechanism 62 is not particularly limited as long as it can move the second nozzle 26 linearly with respect to the stage 10. For example, a belt drive shuttle mechanism combined with a belt, a pulley, and a motor for rotating the pulley is used. Also, for example, a combination of a rack and pinion mechanism and a motor is used. Also, for example, a linear motor is used.

  The moving mechanism 62 is controlled by the control unit 20, for example. The control unit 20 controls, for example, a scanning range of the second nozzle 26 with respect to the stage 10, a relative velocity of the second nozzle 26 with respect to the stage 10, and the like to desired values.

  By moving the second nozzle 26, it is possible to uniformly form a water film on the surface of the sample W.

Seventh Embodiment
The processing apparatus of the present embodiment is the same as that of the first embodiment except that a plurality of first nozzles are provided. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 10 is a schematic view of the processing apparatus of the present embodiment. FIG. 10 is a schematic view including the cross-sectional structure of the device.

  As shown in FIG. 10, the semiconductor manufacturing apparatus of the present embodiment is provided with three first nozzles 16. The number of the first nozzles 16 is not limited to three as long as the number is two or more.

  According to this embodiment, by providing the plurality of first nozzles 16, it is possible to improve the productivity of processing.

Eighth Embodiment
The processing apparatus of this embodiment is the same as that of the first embodiment except that the injection direction of the substance of the first nozzle is inclined in the direction toward the outer periphery of the stage. Therefore, the contents overlapping with the first embodiment will not be described.

  FIG. 11 is a schematic view of the processing apparatus of the present embodiment. FIG. 11 is a schematic view including the cross-sectional structure of the device.

  As shown in FIG. 11, in the semiconductor manufacturing apparatus of the present embodiment, the injection direction of the substance of the first nozzle 16 is inclined in the direction toward the outer peripheral portion of the stage 10.

  According to the present embodiment, the particles scattered from the surface of the sample W and the mist containing the particles can be effectively eliminated from the space on the upper surface of the sample W. Therefore, adhesion of particles to the surface of the sample W is further suppressed.

  As mentioned above, although the case where a semiconductor element was vertical MOSFET was explained to an example by the embodiment, a semiconductor element is not limited to vertical MOSFET.

  In the embodiment, the removal of the metal film or the resin film at the time of dicing has been described as an example, but it is also possible to apply the processing apparatus of the embodiment to, for example, cleaning the surface of a semiconductor substrate.

  In the embodiment, although the case where the substance to be jetted is particles containing carbon dioxide has been described as an example, the substance to be jetted is, for example, pressurized water, pressurized water containing abrasive particles, dioxide Other substances such as particles other than carbon particles may be used. For example, it is also possible to apply other particles that are solid at the time of injection from a nozzle and that evaporate in an atmosphere in which a substrate such as normal temperature is placed. For example, it is also possible to apply nitrogen particles or argon particles.

  In the embodiments, the semiconductor manufacturing apparatus has been described as an example, but the present invention can also be applied to a MEMS (Micro Electro Mechanical Systems) manufacturing apparatus.

  Further, in the embodiment, the case where the nozzle ejects the substance to a partial area of the sample and the entire area of the sample is processed by relatively moving the stage and the nozzle has been described as an example. However, for example, a substance can be simultaneously jetted from the nozzle over the entire area of the sample, and the entire area of the sample can be processed at one time. For example, by making the nozzle diameter equal to or larger than the size of the sample, or combining a large number of nozzles, it is possible to configure a nozzle that collectively processes the entire area of the sample.

  While certain embodiments and examples of the present invention have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the scope of the invention. For example, components of one embodiment may be replaced or modified with components of another embodiment. These embodiments and modifications thereof are included in the scope and the gist of the invention, and are included in the invention described in the claims and the equivalent scope thereof.

10 stage 14 rotation mechanism 16 first nozzle 18 movement mechanism (first movement mechanism)
Reference Signs List 20 control unit 22 housing 26 second nozzle 28 third nozzle 48 intake port 50 exhaust port 52 rectifying plate

Claims (6)

A stage on which the sample can be placed;
A rotation mechanism for rotating the stage;
A first nozzle for injecting a gas containing particles containing carbon dioxide capable of removing a metal film or a resin film intentionally formed on the sample, onto the sample;
A second nozzle provided on the same side as the first nozzle with respect to the sample, supplying water to the rotation center of the sample before spraying the particles, and forming a water film on the entire surface of the sample When,
Equipped with
Wherein the momentum of the gas containing the particles ejected from the first nozzle to form a gap in the coating of the water, the metal film or processing device Ru exposing the resin film. A moving mechanism for relatively moving the stage and the first nozzle in a direction perpendicular to the rotation axis of the stage;
A control unit that controls the moving mechanism;
The processing apparatus according to claim 1, further comprising: A baffle plate surrounding the stage;
A suction mechanism that generates an air flow between the stage and the current plate;
The processing apparatus according to claim 1, further comprising: 4. The device according to claim 1, further comprising: a third nozzle provided on the same side as the first nozzle with respect to the sample and injecting the gas onto the sample simultaneously with the injection of the gas containing the particles . The processor according to one of the preceding claims. The processing apparatus according to any one of claims 1 to 4, wherein an injection direction of the gas containing the particles of the first nozzle is substantially perpendicular to a surface of the stage. The average diameter of the particles is 10 μm to 200 μm, and the spot diameter on the surface of the metal film or the surface of the resin film when the gas containing the particles is sprayed to the metal film or the resin film is φ3 mm The processing apparatus according to any one of claims 1 to 5, which has a diameter of 10 mm or less.

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