TWI720321B - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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TWI720321B
TWI720321B TW107120977A TW107120977A TWI720321B TW I720321 B TWI720321 B TW I720321B TW 107120977 A TW107120977 A TW 107120977A TW 107120977 A TW107120977 A TW 107120977A TW I720321 B TWI720321 B TW I720321B
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substrate
gap
processing apparatus
facing
outer peripheral
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TW107120977A
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TW201906671A (en
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吉田武司
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日商斯庫林集團股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
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Abstract

In a substrate processing apparatus 1, a lower opposing part 37 is disposed below a substrate opposing part 35, and faces the substrate opposing part 35 in the vertical direction via a lower gap 381. In the lower gap 381, a gap air flow going outward in the radial direction from the radially inner side is formed. The lower opposing part 37 has an outer peripheral surface 376 extending downward and radially outward from the outer peripheral edge of the lower gap 381. In the substrate processing apparatus 1, an airflow flowing out from the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower opposing part 37 due to the Coanda effect. Also, the gas around the airflow is attracted by the Coanda effect and accelerated downward. As a result, a downward airflow between a substrate 9 and a cup part 4 can be suitably formed. It is thereby possible to prevent liquid droplets etc. of the processing liquid bounced off by the cup part 4 from re-adhering to the substrate 9.

Description

基板處理裝置 Substrate processing device

本發明係關於一種處理基板之基板處理裝置。 The present invention relates to a substrate processing device for processing substrates.

習知，於半導體基板(以下，簡稱為「基板」)之製造步驟中，對基板實施各種處理。例如，於日本專利實用新型登錄第3171521號公報(文獻1)中所揭示之基板處理裝置中，將處理液供給至與保持板一起旋轉之晶圓上，進行晶圓之洗淨處理。供給至晶圓之處理液藉由離心力而向徑向外側移動，自晶圓之外周緣向周圍飛散。於晶圓之周圍，設置有與保持板一起旋轉之旋轉杯，自晶圓飛散之處理液由旋轉杯之內周面接住而向下方排出。 Conventionally, in the manufacturing steps of a semiconductor substrate (hereinafter referred to as a "substrate"), various treatments are performed on the substrate. For example, in the substrate processing apparatus disclosed in Japanese Patent Utility Model Registration No. 3171521 (Document 1), a processing liquid is supplied to a wafer rotating with a holding plate, and the wafer is washed. The processing liquid supplied to the wafer moves radially outward by centrifugal force, and scatters from the outer periphery of the wafer to the surroundings. Around the wafer, a rotating cup that rotates with the holding plate is provided, and the processing liquid scattered from the wafer is caught by the inner peripheral surface of the rotating cup and discharged downward.

且說，於文獻1之基板處理裝置中，有自旋轉杯之內周面彈回之處理液之液滴等再附著於晶圓之虞。因此，例如，考慮自旋轉杯之下方進行排氣而於晶圓與旋轉杯之間形成向下之氣流，將自旋轉杯彈回之處理液之液滴等向下方引導。然而，若欲形成能夠防止液滴等向晶圓再附著之流速之氣流，則有排氣部之容量增大，而基板處理裝置之運轉成本增大之虞。又，於使複數個基板處理裝置並行地運轉之情況下，亦有於由複數個基板處理裝置共用之排氣部中產生容量不足，而晶圓與旋轉杯之間之向下之氣流之流速降低之虞。 In addition, in the substrate processing apparatus of Document 1, there is a possibility that droplets of the processing liquid that rebound from the inner peripheral surface of the rotating cup may reattach to the wafer. Therefore, for example, it is considered that exhaust is performed from below the rotating cup to form a downward air flow between the wafer and the rotating cup, and the droplets of the processing liquid rebounded from the rotating cup are guided downward. However, if it is desired to form an air flow at a flow rate that can prevent the reattachment of liquid droplets to the wafer, the capacity of the exhaust portion increases, and the operating cost of the substrate processing apparatus may increase. In addition, when a plurality of substrate processing apparatuses are operated in parallel, there is also insufficient capacity in the exhaust part shared by the plurality of substrate processing apparatuses, and the flow rate of the downward airflow between the wafer and the rotating cup Reduce the risk.

本發明係關於處理基板之基板處理裝置，其目的在於較佳地形成基板與杯部之間之向下之氣流。 The present invention relates to a substrate processing apparatus for processing substrates, and its purpose is to better form a downward air flow between the substrate and the cup.

本發明之較佳之一形態之基板處理裝置具備：基板保持部，其具有與基板之下表面於上下方向對向之基板對向部，以水平狀態保持上述基板；基板旋轉機構，其以朝向上下方向之中心軸為中心而使上述基板保持部旋轉；處理液供給部，其將處理液供給至上述基板；杯部，其包圍上述基板保持部之周圍；及下部對向部，其配置於上述基板對向部之下側，與上述基板對向部介隔下部間隙而於上下方向對向。於上述下部間隙中，形成自徑向內側朝向徑向外側之間隙氣流。上述下部對向部具備自上述下部間隙之外周緣向下方且朝徑向外側延伸之外周面。根據該基板處理裝置，可較佳地形成基板與杯部之間之向下之氣流。 A substrate processing apparatus of a preferred aspect of the present invention includes: a substrate holding portion having a substrate facing portion opposed to the lower surface of the substrate in the vertical direction, and holding the substrate in a horizontal state; and a substrate rotating mechanism that faces up and down The central axis of the direction is the center to rotate the substrate holding portion; a processing liquid supply portion that supplies the processing liquid to the substrate; a cup portion that surrounds the substrate holding portion; and a lower facing portion disposed on the above The lower side of the substrate facing portion is opposed to the substrate facing portion in the vertical direction via a lower gap. In the above-mentioned lower gap, a gap airflow from the radially inner side to the radially outer side is formed. The lower facing portion includes an outer peripheral surface extending downward and radially outward from the outer peripheral edge of the lower gap. According to the substrate processing apparatus, a downward air flow between the substrate and the cup portion can be preferably formed.

較佳為，上述下部對向部之上述外周面之至少一部分位於較上述基板對向部之外周緣靠徑向外側。 Preferably, at least a part of the outer peripheral surface of the lower facing portion is located radially outward from the outer periphery of the substrate facing portion.

較佳為，上述下部間隙之上述外周緣位於與上述基板之外周緣於徑向相同之位置，或者位於較上述基板之上述外周緣靠徑向外側。 Preferably, the outer peripheral edge of the lower gap is located at the same position in the radial direction as the outer peripheral edge of the substrate, or located radially outside of the outer peripheral edge of the substrate.

較佳為，向下通過上述下部對向部之上述外周面之徑向外側之氣體自上述杯部向外部排出，與上述氣體不同之氣體自徑向內側供給至上述下部間隙。 Preferably, the gas passing downward in the radial direction of the outer peripheral surface of the lower facing portion is discharged from the cup portion to the outside, and a gas different from the gas is supplied to the lower gap from the radial inner side.

較佳為，進而具備間隙變更機構，該間隙變更機構藉由使上述基板對向部相對於上述下部對向部於上下方向相對移動，而變更上述下部間隙之上下方向之高度。 Preferably, it further includes a gap changing mechanism that changes the height of the lower gap in the upper and lower direction by relatively moving the substrate opposing portion with respect to the lower opposing portion in the vertical direction.

較佳為，上述下部對向部連接於上述基板對向部，藉由上述基板旋轉機構而與上述基板對向部一起旋轉。 Preferably, the lower facing portion is connected to the substrate facing portion, and is rotated together with the substrate facing portion by the substrate rotating mechanism.

較佳為，進而具備與上述下部對向部於上下方向對向之凸座部，自徑向內側將沖洗氣體供給至上述下部對向部與上述凸座部之間之間隙，上述沖洗氣體之一部分係自徑向內側供給至上述下部間隙。 Preferably, it is further provided with a boss portion opposed to the lower facing portion in the vertical direction, and flushing gas is supplied from the radially inner side to the gap between the lower facing portion and the boss portion, and the flushing gas is A part is supplied to the lower gap from the inside in the radial direction.

較佳為，藉由利用上述基板旋轉機構進行之上述基板保持部之旋轉，形成上述間隙氣流。 Preferably, the gap airflow is formed by the rotation of the substrate holding portion by the substrate rotation mechanism.

較佳為，上述基板保持部進而具有鰭部，該鰭部配置於較上述下部間隙靠徑向內側，藉由上述基板保持部之旋轉，朝向上述下部間隙向徑向外側送出氣體。 Preferably, the substrate holding portion further has a fin portion arranged on a radially inner side of the lower gap, and the rotation of the substrate holding portion sends gas radially outward toward the lower gap.

較佳為，於上述基板對向部與上述下部對向部之間，形成有與上述下部間隙之內周緣連續並且上下方向之高度較上述下部間隙大之緩衝空間，上述緩衝空間朝向下方開口。 Preferably, between the substrate facing portion and the lower facing portion, there is formed a buffer space continuous with the inner periphery of the lower gap and having a height in the vertical direction greater than the lower gap, and the buffer space opens downward.

較佳為，進而具備氣體噴射部，該氣體噴射部朝向上述下部間隙自徑向內側噴射氣體而形成上述間隙氣流。 Preferably, it further includes a gas injection portion that injects gas from the radially inner side toward the lower gap to form the gap airflow.

較佳為，於上述基板對向部與上述下部對向部之間，形成有於較上述氣體噴射部靠徑向外側與上述下部間隙之內周緣連續、並且上下方向之高度較上述下部間隙大之緩衝空間。 Preferably, between the substrate opposing portion and the lower opposing portion, a radially outer side than the gas injection portion is formed to be continuous with the inner peripheral edge of the lower gap, and the height in the vertical direction is greater than that of the lower gap. The buffer space.

較佳為，藉由控制來自上述氣體噴射部之氣體之噴射流量，將上述緩衝空間維持為正壓。 Preferably, by controlling the injection flow rate of the gas from the gas injection portion, the buffer space is maintained at a positive pressure.

較佳為，進而具備筒狀整流部，該筒狀整流部於上述下部對向部與上述杯部之間沿著上下方向延伸，而包圍上述下部對向部之周圍，上述筒狀整流部之下端緣與上述下部對向部之上述外周面於徑向對向，上述筒狀整流部之上端緣與上述下部對向部之間之最短距離，較上述筒狀整流部之上述下端緣與上述下部對向部之上述外周面之間之徑向的距離更大。 Preferably, it is further provided with a cylindrical rectification portion that extends in the vertical direction between the lower opposing portion and the cup portion, and surrounds the periphery of the lower opposing portion, and the cylindrical rectification portion The lower end edge is opposed to the outer peripheral surface of the lower facing portion in the radial direction, and the shortest distance between the upper end edge of the cylindrical rectifying portion and the lower facing portion is shorter than the lower end edge of the cylindrical rectifying portion and the The distance in the radial direction between the outer peripheral surfaces of the lower opposing parts is greater.

較佳為，進而具備氣流形成部，該氣流形成部形成自較上述基板靠上側通過上述基板與上述杯部之間並朝向下方之氣流。 It is preferable to further include an airflow forming portion that forms an airflow that passes between the substrate and the cup portion from the upper side of the substrate and is directed downward.

上述目的及其他目的、特徵、態樣及優點可藉由參照隨附圖式於以下進行之本發明之詳細之說明而明瞭。 The above objectives and other objectives, features, aspects and advantages can be made clear by the detailed description of the present invention below with reference to the accompanying drawings.

1、1a、1b‧‧‧基板處理裝置 1, 1a, 1b‧‧‧Substrate processing equipment

4‧‧‧杯部 4‧‧‧Cup Department

9‧‧‧基板 9‧‧‧Substrate

11‧‧‧腔室 11‧‧‧Chamber

31、31a‧‧‧基板保持部 31, 31a‧‧‧Substrate holding part

33‧‧‧基板旋轉機構 33‧‧‧Substrate rotation mechanism

34‧‧‧凸座部 34‧‧‧Protrusion

35‧‧‧基板對向部 35‧‧‧Substrate facing part

36‧‧‧對向部支撐部 36‧‧‧Opposite part support part

37、37a‧‧‧下部對向部 37, 37a‧‧‧The lower opposite part

39‧‧‧間隙變更機構 39‧‧‧Gap Change Mechanism

41‧‧‧側壁部 41‧‧‧Sidewall

42‧‧‧底面部 42‧‧‧Bottom face

43‧‧‧上表面部 43‧‧‧Upper surface

44‧‧‧排出埠口 44‧‧‧Exhaust port

45‧‧‧筒狀整流部 45‧‧‧Cylinder rectifier

51‧‧‧噴嘴 51‧‧‧Nozzle

55‧‧‧氣體供給部 55‧‧‧Gas Supply Department

61‧‧‧抽吸部 61‧‧‧Suction section

91‧‧‧(基板之)上表面 91‧‧‧(of the substrate) upper surface

92‧‧‧(基板之)下表面 92‧‧‧(of the substrate) lower surface

341‧‧‧(凸座部之)上表面 341‧‧‧(Protrusion part) upper surface

342‧‧‧凸座間隙 342‧‧‧Protrusion gap

351‧‧‧(基板對向部之)上表面 351‧‧‧(of the opposite part of the substrate) upper surface

352‧‧‧(基板對向部之)下表面 352‧‧‧(of the opposite part of the substrate) lower surface

353‧‧‧連接部 353‧‧‧Connecting part

355‧‧‧基板支撐部 355‧‧‧Substrate support

356‧‧‧鰭部 356‧‧‧Fin

357‧‧‧鰭元件 357‧‧‧Fin element

361‧‧‧主配管 361‧‧‧Main Piping

362‧‧‧沖洗配管 362‧‧‧Flushing piping

363‧‧‧氣體噴射部 363‧‧‧Gas Injection Department

364‧‧‧噴射配管 364‧‧‧Injection piping

371‧‧‧第1部位 371‧‧‧Part 1

372‧‧‧第2部位 372‧‧‧Section 2

373‧‧‧(下部對向部之)下表面 373‧‧‧(of the lower opposite part) lower surface

374‧‧‧(第1部位之)上表面 374‧‧‧(Part 1) Upper surface

375‧‧‧(第2部位之)上表面 375‧‧‧ (of the second part) upper surface

376‧‧‧(下部對向部之)外周面 376‧‧‧(of the lower opposite part) outer peripheral surface

381、381a‧‧‧下部間隙 381、381a‧‧‧Lower clearance

382、382b‧‧‧緩衝空間 382、382b‧‧‧Buffer space

383‧‧‧凹部 383‧‧‧Concave

384‧‧‧下部開口 384‧‧‧Lower opening

385‧‧‧(下部間隙之)外周緣 385‧‧‧(of the lower gap) outer periphery

386‧‧‧(下部間隙之)內周緣 386‧‧‧(of the lower gap) inner periphery

J1‧‧‧中心軸 J1‧‧‧Central axis

圖1係表示第1實施形態之基板處理裝置之構成之圖。 Fig. 1 is a diagram showing the structure of a substrate processing apparatus according to the first embodiment.

圖2係將基板保持部附近放大表示之縱剖面圖。 Fig. 2 is an enlarged longitudinal sectional view showing the vicinity of the substrate holding portion.

圖3係將其他基板保持部附近放大表示之縱剖面圖。 Fig. 3 is an enlarged longitudinal sectional view showing the vicinity of another substrate holding portion.

圖4係基板保持部之仰視圖。 Fig. 4 is a bottom view of the substrate holding portion.

圖5係將第2實施形態之基板處理裝置之基板保持部附近放大表示之縱剖面圖。 Fig. 5 is an enlarged longitudinal sectional view showing the vicinity of the substrate holding portion of the substrate processing apparatus of the second embodiment.

圖6係將第3實施形態之基板處理裝置之基板保持部附近放大表示之縱剖面圖。 Fig. 6 is an enlarged longitudinal sectional view showing the vicinity of the substrate holding portion of the substrate processing apparatus of the third embodiment.

圖7係將其他基板保持部附近放大表示之縱剖面圖。 Fig. 7 is an enlarged longitudinal sectional view showing the vicinity of another substrate holding portion.

圖1係表示本發明之第1實施形態之基板處理裝置1之構成之圖。基板處理裝置1係一片一片地處理半導體基板9(以下，簡稱為「基板9」)之單片式之裝置。基板處理裝置1將處理液供給至基板9而進行處理。於圖1中，以剖面表示基板處理裝置1之構成之一部分。 Fig. 1 is a diagram showing the structure of a substrate processing apparatus 1 according to the first embodiment of the present invention. The substrate processing apparatus 1 is a monolithic apparatus that processes semiconductor substrates 9 (hereinafter referred to simply as "substrate 9") one by one. The substrate processing apparatus 1 supplies a processing liquid to the substrate 9 to perform processing. In FIG. 1, a part of the structure of the substrate processing apparatus 1 is shown in cross section.

基板處理裝置1具備腔室11、基板保持部31、下部對向部37、基板旋轉機構33、凸座部34、及杯部4。於腔室11之內部，收容基板保持部31、下部對向部37及杯部4等。於腔室11之頂蓋部，設置有對腔室11內供給氣體(例如，清潔之乾燥空氣)之氣體供給部55。氣體供給部55例如係朝向下方送出氣體之風扇單元。 The substrate processing apparatus 1 includes a chamber 11, a substrate holding portion 31, a lower facing portion 37, a substrate rotating mechanism 33, a boss portion 34, and a cup portion 4. Inside the chamber 11, the substrate holding portion 31, the lower facing portion 37, the cup portion 4, and the like are housed. The top cover of the chamber 11 is provided with a gas supply part 55 for supplying gas (for example, clean dry air) into the chamber 11. The gas supply part 55 is, for example, a fan unit that sends out gas downward.

基板保持部31係以朝向上下方向之中心軸J1為中心之大致圓板狀之構件。基板9配置於基板保持部31之上方。基板9係於腔室11內以水平狀態藉由基板保持部31而被保持。基板旋轉機構33配置於基板保持部31之下方。基板旋轉機構33係以中心軸J1為中心而使基板9與基板保持部31一起旋轉。基板旋轉機構33收容於有蓋大致圓筒狀之凸座部34之內部。換言之，凸座部34係收容基板旋轉機構33之基板旋轉機構收容部。 The substrate holding portion 31 is a substantially disc-shaped member centered on the central axis J1 facing the vertical direction. The substrate 9 is arranged above the substrate holding portion 31. The substrate 9 is held by the substrate holding portion 31 in a horizontal state in the chamber 11. The substrate rotating mechanism 33 is arranged below the substrate holding portion 31. The substrate rotation mechanism 33 rotates the substrate 9 and the substrate holding portion 31 together with the center axis J1 as the center. The substrate rotating mechanism 33 is housed in a substantially cylindrical boss portion 34 with a cover. In other words, the boss portion 34 is a substrate rotation mechanism accommodating portion that accommodates the substrate rotation mechanism 33.

於基板保持部31之上方，配置將處理液供給至基板9之處理液供給部即噴嘴51。噴嘴51係自基板9之上方朝向基板9之上側之主面(以下，稱為「上表面91」)，個別地供給複數種處理液。自噴嘴51供給之處理液亦可為僅1種。又，除了噴嘴51以外，亦可設置將處理液供給至基板9之其他噴嘴。 Above the substrate holding portion 31, a nozzle 51 which is a processing liquid supply portion for supplying the processing liquid to the substrate 9 is arranged. The nozzle 51 is from the upper side of the substrate 9 toward the main surface (hereinafter, referred to as the "upper surface 91") on the upper side of the substrate 9, and supplies plural kinds of processing liquids individually. The processing liquid supplied from the nozzle 51 may be only one type. In addition to the nozzle 51, another nozzle for supplying the processing liquid to the substrate 9 may be provided.

杯部4係以中心軸J1為中心之大致環狀之構件。杯部4係包圍基板9及基板保持部31之周圍而配置。杯部4具備側壁部41、底面部42、及上表面部43。側壁部41係以中心軸J1為中心之大致圓筒狀，且與中心軸J1大致平行地沿著上下方向延伸。底面部42係以中心軸J1為中心之大致圓環板狀。底面部42與中心軸J1大致垂直。 The cup 4 is a substantially ring-shaped member centered on the central axis J1. The cup portion 4 is arranged to surround the substrate 9 and the substrate holding portion 31. The cup portion 4 includes a side wall portion 41, a bottom surface portion 42, and an upper surface portion 43. The side wall portion 41 has a substantially cylindrical shape centered on the central axis J1, and extends in the vertical direction substantially parallel to the central axis J1. The bottom portion 42 has a substantially annular plate shape centered on the central axis J1. The bottom portion 42 is substantially perpendicular to the central axis J1.

底面部42係自側壁部41之下端部向以中心軸J1為中心之徑向(以下，簡稱為「徑向」)內側延伸。於底面部42設置有排出埠口44。排出埠口44連接於配置於腔室11之外部之抽吸部61。上表面部43係以中心軸J1為中心之大致圓環板狀。上表面部43係自側壁部41之上端部向徑向內側延伸。上表面部43之徑向內側之面係隨著自側壁部41朝向徑向內側而朝向上方之傾斜面。 The bottom portion 42 extends from the lower end of the side wall portion 41 inward in the radial direction (hereinafter, simply referred to as "radial direction") centered on the central axis J1. A discharge port 44 is provided on the bottom surface 42. The discharge port 44 is connected to the suction part 61 arranged outside the chamber 11. The upper surface portion 43 has a substantially annular plate shape centered on the central axis J1. The upper surface portion 43 extends from the upper end portion of the side wall portion 41 inward in the radial direction. The radially inner surface of the upper surface portion 43 is an inclined surface that faces upward from the side wall portion 41 toward the radially inner side.

杯部4接收自旋轉中之基板9朝向周圍飛散之處理液等。具體而言，自基板9飛散之處理液撞擊杯部4之上表面部43之徑向內側之面、或者側壁部41之徑向內側之面，向下方掉落而到達至底面部42。該處理液係藉由抽吸部61而與周圍之氣體一起經由排出埠口44被抽吸，向杯部4及腔室11之外部排出。 The cup part 4 receives the processing liquid etc. which are scattered toward the surroundings from the rotating substrate 9. Specifically, the processing liquid scattered from the substrate 9 hits the radially inner surface of the upper surface portion 43 of the cup portion 4 or the radially inner surface of the side wall portion 41 and drops downward to reach the bottom surface 42. The treatment liquid is sucked by the suction part 61 together with the surrounding gas through the discharge port 44 and discharged to the outside of the cup part 4 and the chamber 11.

於基板處理裝置1中，自氣體供給部55向下方送出之氣體經由排出埠口44而被抽吸，藉此形成自較基板9靠上側通過基板9與杯部4之間朝向下方之氣流(所謂之降流)。即，氣體供給部55及排出埠口44係形成該氣流之氣流形成部。再者，該氣流形成部亦可包含抽吸部61等。 In the substrate processing apparatus 1, the gas sent downward from the gas supply part 55 is sucked through the discharge port 44, thereby forming an air flow ( The so-called downflow). That is, the gas supply part 55 and the discharge port 44 form the air flow forming part of the air flow. Furthermore, the airflow forming part may also include a suction part 61 and the like.

圖2係將基板處理裝置1之基板保持部31之一部分放大表示之縱剖面圖。於圖2中，亦一併描繪將基板保持部31以外之構成。又，於圖2中，表示一部分之構成之側面(於圖3、圖5~圖7中亦相同)。基板保持部31具備基板對向部35、對向部支撐部36、及基板支撐部355。於對向部支撐部36之周圍設置有下部對向部37。下部對向部37配置於基板對向部35之下側。 FIG. 2 is a longitudinal cross-sectional view showing an enlarged part of a substrate holding portion 31 of the substrate processing apparatus 1. In FIG. 2, structures other than the substrate holding portion 31 are also depicted. In addition, in Fig. 2, the side surface of a part of the structure is shown (the same in Fig. 3, Fig. 5 to Fig. 7). The substrate holding portion 31 includes a substrate facing portion 35, an facing portion supporting portion 36, and a substrate supporting portion 355. A lower facing portion 37 is provided around the facing portion supporting portion 36. The lower facing portion 37 is arranged below the substrate facing portion 35.

基板對向部35係以中心軸J1為中心之大致圓板狀之部位。基板對向部35係與基板9之下側之主面(以下，稱為「下表 面92」)於上下方向對向。於基板對向部35之上表面351，配置複數個基板支撐部355。複數個基板支撐部355係於以中心軸J1為中心之圓周方向(以下，簡稱為「圓周方向」)，以大致等角度間隔地配置。複數個基板支撐部355支撐基板9之外緣部。基板9被支撐於向上方離開基板對向部35之位置。 The substrate facing portion 35 is a substantially disc-shaped portion centered on the central axis J1. The substrate facing portion 35 is opposed to the main surface on the lower side of the substrate 9 (hereinafter referred to as "lower surface 92") in the vertical direction. A plurality of substrate support portions 355 are arranged on the upper surface 351 of the substrate facing portion 35. The plurality of substrate support portions 355 are arranged in a circumferential direction (hereinafter, simply referred to as "circumferential direction") centered on the central axis J1, and are arranged at substantially equal angular intervals. The plurality of substrate support parts 355 support the outer edge of the substrate 9. The substrate 9 is supported at a position away from the substrate facing portion 35 upward.

對向部支撐部36係以中心軸J1為中心之大致圓柱狀之部位。對向部支撐部36連接於基板對向部35之下表面352之中央部，自基板對向部35向下方延伸。基板對向部35與對向部支撐部36既可為連接為一體之構件，亦可為不同構件。對向部支撐部36固定於基板旋轉機構33之旋轉軸，藉由基板旋轉機構33而與基板對向部35一起旋轉。對向部支撐部36亦可作為基板旋轉機構33之旋轉軸之一部分。 The opposing portion support portion 36 is a substantially cylindrical portion centered on the central axis J1. The facing portion supporting portion 36 is connected to the central portion of the lower surface 352 of the substrate facing portion 35 and extends downward from the substrate facing portion 35. The substrate opposing portion 35 and the opposing portion supporting portion 36 may be connected as an integral member, or may be different members. The facing portion support portion 36 is fixed to the rotating shaft of the substrate rotating mechanism 33 and is rotated together with the substrate facing portion 35 by the substrate rotating mechanism 33. The opposing portion support portion 36 can also be used as a part of the rotation axis of the substrate rotation mechanism 33.

下部對向部37係以中心軸J1為中心之大致圓筒狀之部位。下部對向部37係向下方離開基板對向部35。下部對向部37經由複數個連接部353而連接於基板對向部35之下表面352。換言之，下部對向部37與基板保持部31係連接為一體之構件。複數個連接部353例如係大致圓柱狀，且於圓周方向以等角度間隔配置。複數個連接部353例如於較複數個基板支撐部355靠徑向內側，配置於與複數個基板支撐部355於圓周方向不同之位置。於藉由基板旋轉機構33而使基板保持部31旋轉時，下部對向部37亦與基板對向部35及對向部支撐部36一起旋轉。 The lower facing portion 37 is a substantially cylindrical portion centered on the central axis J1. The lower facing portion 37 is separated from the substrate facing portion 35 downward. The lower facing portion 37 is connected to the lower surface 352 of the substrate facing portion 35 via a plurality of connecting portions 353. In other words, the lower facing portion 37 and the substrate holding portion 31 are connected as an integral member. The plurality of connecting portions 353 are, for example, substantially cylindrical, and are arranged at equal angular intervals in the circumferential direction. The plurality of connection portions 353 are, for example, radially inner side of the plurality of substrate support portions 355, and are arranged at positions different from the plurality of substrate support portions 355 in the circumferential direction. When the substrate holding portion 31 is rotated by the substrate rotating mechanism 33, the lower facing portion 37 also rotates together with the substrate facing portion 35 and the facing portion supporting portion 36.

下部對向部37具備第1部位371及第2部位372。第1部位371係以中心軸J1為中心之大致圓筒狀之部位。第1部位371位於基板對向部35之外周部之下方。第2部位372係以中 心軸J1為中心之大致圓環板狀之部位。第2部位372自第1部位371之內周部向徑向內側延伸。第2部位372之上下方向之高度較第1部位371之上下方向之高度小。 The lower facing portion 37 includes a first part 371 and a second part 372. The first part 371 is a substantially cylindrical part centered on the central axis J1. The first portion 371 is located below the outer peripheral portion of the substrate facing portion 35. The second part 372 is a substantially annular plate-shaped part centered on the central axis J1. The second part 372 extends radially inward from the inner peripheral portion of the first part 371. The height of the second part 372 in the up and down direction is smaller than the height of the first part 371 in the up and down direction.

第1部位371之上表面374係與基板對向部35之下表面352介隔微小之間隙381而於上下方向對向。於以下之說明中，將形成於第1部位371之上表面374與基板對向部35之下表面352之間之間隙381稱為「下部間隙381」。下部間隙381係以中心軸J1為中心之大致圓環狀之空隙。下部間隙381之上下方向之高度例如遍及徑向之全長及圓周方向之全長大致固定。下部間隙381之上下方向之高度例如為1mm以上且5mm以下。 The upper surface 374 of the first portion 371 and the lower surface 352 of the substrate facing portion 35 are opposed to each other in the vertical direction with a small gap 381 interposed therebetween. In the following description, the gap 381 formed between the upper surface 374 of the first portion 371 and the lower surface 352 of the substrate facing portion 35 is referred to as the "lower gap 381". The lower gap 381 is a substantially annular gap centered on the central axis J1. The height of the lower gap 381 in the upper and lower directions is substantially constant, for example, over the entire length in the radial direction and the entire length in the circumferential direction. The height in the upper and lower direction of the lower gap 381 is, for example, 1 mm or more and 5 mm or less.

下部間隙381之外周緣385位於較保持於基板保持部31之基板9之外周緣靠徑向外側。上述複數個連接部353位於下部間隙381，將下部對向部37之第1部位371與基板對向部35連接。再者，於第1部位371之上表面374與基板對向部35之下表面352之間之上下方向之距離於徑向並不固定之情況下，下部間隙381之外周緣385例如係該距離最小之徑向之位置。 The outer peripheral edge 385 of the lower gap 381 is located on the radially outer side of the outer peripheral edge of the substrate 9 held by the substrate holding portion 31. The plurality of connecting portions 353 are located in the lower gap 381 and connect the first portion 371 of the lower facing portion 37 and the substrate facing portion 35. Furthermore, when the distance in the up-down direction between the upper surface 374 of the first portion 371 and the lower surface 352 of the substrate facing portion 35 is not constant in the radial direction, the outer peripheral edge 385 of the lower gap 381 is, for example, the distance The position of the smallest radial.

第2部位372之上表面375係於第1部位371之徑向內側(即，下部間隙381之徑向內側)，位於較第1部位371之上表面374靠下側。第2部位372之上表面375與基板對向部35之下表面352介隔空間382而於上下方向對向。於以下之說明中，將形成於第2部位372之上表面375與基板對向部35之下表面352之間的空間382稱為「緩衝空間382」。緩衝空間382之上下方向之高度較下部間隙381之上下方向之高度大。緩衝空間382係與下部間隙381之內周緣386連續之空間。於第1部位371之內周面，設置 有向徑向外側凹陷之大致圓環狀之凹部383。該凹部383亦為緩衝空間382之一部分。 The upper surface 375 of the second portion 372 is located on the radially inner side of the first portion 371 (that is, the radially inner side of the lower gap 381), and is located below the upper surface 374 of the first portion 371. The upper surface 375 of the second portion 372 and the lower surface 352 of the substrate facing portion 35 are opposed to each other in the vertical direction with the space 382 interposed therebetween. In the following description, the space 382 formed between the upper surface 375 of the second portion 372 and the lower surface 352 of the substrate facing portion 35 is referred to as a "buffer space 382". The height of the buffer space 382 in the upper and lower directions is greater than the height of the lower gap 381 in the upper and lower directions. The buffer space 382 is a space continuous with the inner periphery 386 of the lower gap 381. On the inner peripheral surface of the first part 371, a substantially annular recess 383 recessed radially outward is provided. The recess 383 is also a part of the buffer space 382.

下部對向部37之第2部位372之內周緣向徑向外側離開對向部支撐部36。於以下之說明中，將第2部位372之內周緣與對向部支撐部36之外周面之間的間隙384稱為「下部開口384」。下部開口384係以中心軸J1為中心之大致圓環狀之開口。下部開口384與上述緩衝空間382連續。換言之，緩衝空間382經由下部開口384而朝向下方開口。 The inner peripheral edge of the second portion 372 of the lower facing portion 37 is away from the facing portion support portion 36 radially outward. In the following description, the gap 384 between the inner peripheral edge of the second portion 372 and the outer peripheral surface of the opposing portion support portion 36 is referred to as the "lower opening 384". The lower opening 384 is a substantially circular opening centered on the central axis J1. The lower opening 384 is continuous with the above-mentioned buffer space 382. In other words, the buffer space 382 opens downward through the lower opening 384.

下部對向部37之第1部位371之外周面376(即，下部對向部37之外周面376)係自下部間隙381之外周緣385向下方且朝徑向外側延伸之平滑之面。換言之，外周面376係與下部對向部37之第1部位371之上表面374平滑地連續，且自該上表面374向下方且朝徑向外側延伸之平滑之面。於圖2所示之例中，外周面376之剖面自下部間隙381之外周緣385，朝向徑向外側凸起即曲線狀(例如，大致圓弧狀)地向下方且朝徑向外側延伸，然後，向大致鉛垂下方延伸。外周面376之形狀可多樣地變更。例如，外周面376之剖面亦可自下部間隙381之外周緣385大致直線狀地向下方且朝徑向外側延伸。 The outer peripheral surface 376 of the first portion 371 of the lower facing portion 37 (ie, the outer peripheral surface 376 of the lower facing portion 37) is a smooth surface extending downward from the outer periphery 385 of the lower gap 381 and radially outward. In other words, the outer peripheral surface 376 is smoothly continuous with the upper surface 374 of the first portion 371 of the lower facing portion 37, and is a smooth surface extending downward from the upper surface 374 and radially outward. In the example shown in FIG. 2, the cross-section of the outer peripheral surface 376 extends from the outer peripheral edge 385 of the lower gap 381 toward the radially outer side, that is, curvilinearly (for example, substantially arc-shaped) downward and radially outward. Then, it extends substantially vertically downward. The shape of the outer peripheral surface 376 can be variously changed. For example, the cross section of the outer peripheral surface 376 may extend from the outer peripheral edge 385 of the lower gap 381 substantially linearly downward and radially outward.

下部對向部37之外周面376之至少一部分位於較基板對向部35之外周緣靠徑向外側。於圖2所示之例中，基板對向部35之外周緣位於與下部間隙381之外周緣385於徑向相同之位置，下部對向部37之外周面376之大致整體位於較基板對向部35之外周緣靠徑向外側。 At least a part of the outer peripheral surface 376 of the lower facing portion 37 is located on the radially outer side of the outer periphery of the substrate facing portion 35. In the example shown in FIG. 2, the outer peripheral edge of the substrate facing portion 35 is located at the same position in the radial direction as the outer peripheral edge 385 of the lower gap 381, and substantially the entire outer peripheral surface 376 of the lower facing portion 37 is located opposite to the substrate. The outer peripheral edge of the portion 35 is positioned radially outward.

下部對向部37之下表面373係與中心軸J1大致垂直 之平面。第1部位371之下表面及第2部位372之下表面係下部對向部37之下表面373之一部分。下部對向部37之下表面373係與凸座部34之上表面341介隔間隙342而於上下方向對向。於以下之說明中，將形成於下部對向部37之下表面373與凸座部34之上表面341之間的間隙342稱為「凸座間隙342」。凸座間隙342係以中心軸J1為中心之大致圓環狀之空隙。凸座間隙342之上下方向之高度例如遍及徑向之全長及圓周方向之全長而大致固定。凸座間隙342之上下方向之高度例如較下部間隙381之上下方向之高度大。凸座間隙342係經由下部開口384而與緩衝空間382及下部間隙381連續。 The lower surface 373 of the lower facing portion 37 is a plane substantially perpendicular to the central axis J1. The lower surface of the first part 371 and the lower surface of the second part 372 are part of the lower surface 373 of the lower facing portion 37. The lower surface 373 of the lower facing portion 37 and the upper surface 341 of the boss portion 34 are opposed to each other in the vertical direction with a gap 342 interposed therebetween. In the following description, the gap 342 formed between the lower surface 373 of the lower facing portion 37 and the upper surface 341 of the boss portion 34 is referred to as "the boss gap 342". The boss gap 342 is a substantially annular gap centered on the central axis J1. The height of the boss gap 342 in the upper and lower directions is substantially constant, for example, over the entire length in the radial direction and the entire length in the circumferential direction. The height of the boss gap 342 in the upper and lower directions is greater than the height of the lower gap 381 in the upper and lower directions, for example. The boss gap 342 is continuous with the buffer space 382 and the lower gap 381 through the lower opening 384.

對向部支撐部36具備主配管361及複數個沖洗配管362。主配管361係於對向部支撐部36之中央部沿著上下方向延伸。複數個沖洗配管362係自主配管361之上端部向徑向外側呈放射狀地延伸。複數個沖洗配管362例如於圓周方向以大致等角度間隔配置。複數個沖洗配管362之徑向外端位於與凸座間隙342於上下方向大致相同之位置。換言之，形成於對向部支撐部36之外周面之各沖洗配管362之開口係與凸座間隙342於徑向對向。 The opposing portion support portion 36 includes a main pipe 361 and a plurality of flushing pipes 362. The main pipe 361 is connected to the central portion of the opposing portion support portion 36 and extends in the vertical direction. The plurality of flushing pipes 362 extend radially outward in the radial direction from the upper end of the main pipe 361. The plural flushing pipes 362 are arranged at substantially equal angular intervals in the circumferential direction, for example. The radially outer ends of the plurality of flushing pipes 362 are located at substantially the same position as the boss gap 342 in the vertical direction. In other words, the openings of the flushing pipes 362 formed on the outer peripheral surface of the opposing portion support portion 36 are opposed to the boss gap 342 in the radial direction.

主配管361連接於配置於腔室11之外部之氣體供給源(省略圖示)。自該氣體供給源供給至主配管361之氣體(例如，清潔之乾燥空氣)經由複數個沖洗配管362，而自徑向內側供給至凸座間隙342，向徑向外側流動。藉此，凸座間隙342藉由該氣體而被沖洗，防止凸座間隙342之周圍之環境氣體(即，凸座間隙342之徑向外側之環境氣體)流入至凸座間隙342。於以下之說明中，將自複數個沖洗配管362供給至凸座間隙342之氣體稱為「沖洗氣體」。 沖洗氣體之一部分亦經由下部開口384而供給至緩衝空間382。 The main pipe 361 is connected to a gas supply source (not shown) arranged outside the chamber 11. The gas (for example, clean dry air) supplied from the gas supply source to the main pipe 361 is supplied from the radially inner side to the boss gap 342 via the plurality of flushing pipes 362, and flows radially outward. Thereby, the boss gap 342 is flushed by the gas, and the ambient gas around the boss gap 342 (ie, the ambient gas at the radial outside of the boss gap 342) is prevented from flowing into the boss gap 342. In the following description, the gas supplied from the plurality of flushing pipes 362 to the boss gap 342 is referred to as "flushing gas". A part of the flushing gas is also supplied to the buffer space 382 through the lower opening 384.

於在基板處理裝置1中處理基板9時，藉由基板旋轉機構33，而使保持基板9之基板保持部31旋轉。若基板保持部31旋轉，則於下部間隙381及緩衝空間382中，基板對向部35之下表面352附近之氣體藉由離心力而向徑向外側流動。藉此，於下部間隙381中，形成自徑向內側朝向徑向外側之氣流(以下，稱為「間隙氣流」)。 When the substrate 9 is processed in the substrate processing apparatus 1, the substrate holding portion 31 holding the substrate 9 is rotated by the substrate rotating mechanism 33. When the substrate holding portion 31 rotates, in the lower gap 381 and the buffer space 382, the gas near the lower surface 352 of the substrate facing portion 35 flows outward in the radial direction by centrifugal force. As a result, in the lower gap 381, an air flow from the radially inner side to the radially outer side (hereinafter, referred to as "gap airflow") is formed.

藉由利用基板旋轉機構33而進行之基板保持部31之旋轉而形成之間隙氣流自下部間隙381之外周緣385以相對高速流出。例如，自下部間隙381之外周緣385流出之氣流係噴流。自下部間隙381流出之氣流藉由柯恩達效應(Coanda effect)而沿著下部對向部37之外周面376向下方且朝徑向外側流動。又，沿著下部對向部37之外周面376流動之上述氣流之周圍之氣體藉由柯恩達效應而由該氣流引導並向下方流動。其結果，於杯部4內向下方流動之氣流朝向下方加速。向下通過下部對向部37之外周面376之徑向外側之氣體經由排出埠口44(參照圖1)而向杯部4及腔室11之外部排出。 The air flow of the gap formed by the rotation of the substrate holding portion 31 by the substrate rotation mechanism 33 flows out from the outer periphery 385 of the lower gap 381 at a relatively high speed. For example, the air flow flowing out from the outer periphery 385 of the lower gap 381 is a jet flow. The airflow flowing out from the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower opposing portion 37 by the Coanda effect. In addition, the gas surrounding the airflow flowing along the outer peripheral surface 376 of the lower facing portion 37 is guided by the airflow by the Coanda effect and flows downward. As a result, the airflow flowing downward in the cup part 4 accelerates downward. The gas passing downward through the radially outer side of the outer peripheral surface 376 of the lower facing portion 37 is discharged to the outside of the cup portion 4 and the chamber 11 through the discharge port 44 (refer to FIG. 1).

另一方面，於下部間隙381，經由緩衝空間382而自徑向內側供給有自複數個沖洗配管362供給之沖洗氣體之一部分。藉此，於下部間隙381中持續地產生間隙氣流。自徑向內側供給至下部間隙381之上述氣體係與向下通過下部對向部37之外周面376之徑向外側之上述氣體為不同的氣體。換言之，於基板處理裝置1中，向下通過下部對向部37之外周面376之徑向外側之上述氣體不會經由凸座間隙342及緩衝空間382而向下部間隙381繞入並流 入。 On the other hand, in the lower gap 381, a part of the flushing gas supplied from the plurality of flushing pipes 362 is supplied from the radially inner side via the buffer space 382. Thereby, the gap airflow is continuously generated in the lower gap 381. The gas system supplied to the lower gap 381 from the radially inner side is different from the gas that passes downwardly through the radially outer side of the outer peripheral surface 376 of the lower opposing portion 37. In other words, in the substrate processing apparatus 1, the above-mentioned gas passing downward in the radial direction outside of the outer peripheral surface 376 of the lower facing portion 37 will not flow into the lower gap 381 via the boss gap 342 and the buffer space 382.

於圖1所示之基板處理裝置1中，自噴嘴51對與基板保持部31一起旋轉之基板9供給處理液。供給至基板9上之處理液藉由離心力而於基板9之上表面91上向徑向外側移動，自基板9之外周緣向徑向外側飛散。自基板9飛散之處理液藉由於杯部4內向下方流動之氣流而向下方引導，經由排出埠口44而向杯部4及腔室11之外部排出。又，自基板9飛散且自杯部4彈回之處理液亦藉由於杯部4內向下方流動之氣流而被向下方引導，經由排出埠口44而向杯部4及腔室11之外部排出。 In the substrate processing apparatus 1 shown in FIG. 1, the substrate 9 rotating with the substrate holding portion 31 is supplied with a processing liquid from the nozzle 51. The processing liquid supplied to the substrate 9 moves radially outward on the upper surface 91 of the substrate 9 by centrifugal force, and is scattered from the outer periphery of the substrate 9 to the radially outer side. The processing liquid scattered from the substrate 9 is guided downward by the airflow flowing downward in the cup 4, and is discharged to the outside of the cup 4 and the chamber 11 through the discharge port 44. In addition, the processing liquid scattered from the substrate 9 and bounced back from the cup 4 is also guided downward by the airflow flowing downward in the cup 4, and is discharged to the outside of the cup 4 and the chamber 11 through the discharge port 44 .

如以上所說明般，基板處理裝置1具備基板保持部31、下部對向部37、基板旋轉機構33、處理液供給部(即，噴嘴51)、及杯部4。基板保持部31以水平狀態保持基板9。基板保持部31具有與基板9之下表面92於上下方向對向之基板對向部35。基板旋轉機構33係以朝向上下方向之中心軸J1為中心而使基板保持部31旋轉。處理液供給部係對基板9供給處理液。杯部4包圍基板保持部31之周圍。下部對向部37配置於基板對向部35之下側，且與基板對向部35介隔下部間隙381而於上下方向對向。於基板處理裝置1中，於下部間隙381中，形成自徑向內側朝向徑向外側之間隙氣流。下部對向部37具備自下部間隙381之外周緣向下方且朝徑向外側延伸之外周面376。 As described above, the substrate processing apparatus 1 includes the substrate holding portion 31, the lower facing portion 37, the substrate rotating mechanism 33, the processing liquid supply portion (that is, the nozzle 51 ), and the cup portion 4. The substrate holding portion 31 holds the substrate 9 in a horizontal state. The substrate holding portion 31 has a substrate facing portion 35 facing the lower surface 92 of the substrate 9 in the vertical direction. The substrate rotating mechanism 33 rotates the substrate holding portion 31 around the central axis J1 facing the vertical direction. The processing liquid supply unit supplies the processing liquid to the substrate 9. The cup portion 4 surrounds the periphery of the substrate holding portion 31. The lower facing portion 37 is disposed below the substrate facing portion 35 and opposed to the substrate facing portion 35 in the vertical direction with a lower gap 381 interposed therebetween. In the substrate processing apparatus 1, in the lower gap 381, a gap airflow is formed from the radially inner side to the radially outer side. The lower facing portion 37 includes an outer peripheral surface 376 extending downward from the outer peripheral edge of the lower gap 381 and radially outward.

於基板處理裝置1中，如上所述，自下部間隙381流出之氣流藉由柯恩達效應而沿著下部對向部37之外周面376向下方且朝徑向外側流動。又，該氣流之周圍之氣體藉由柯恩達效應而引導，朝向下方加速。藉此，可較佳地形成基板9與杯部4之間之 向下之氣流。又，可使形成於基板9與杯部4之間之該向下之氣流之流速增大。其結果，可抑制基板處理裝置1之初始成本及運轉成本增大，且將由杯部4彈回之處理液之液滴等較佳地向下方引導，抑制該液滴等再附著於基板9。 In the substrate processing apparatus 1, as described above, the air flow out of the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower opposing portion 37 by the Coanda effect. In addition, the gas surrounding the airflow is guided by the Coanda effect and accelerates downward. Thereby, a downward air flow between the substrate 9 and the cup 4 can be formed better. In addition, the flow velocity of the downward airflow formed between the substrate 9 and the cup 4 can be increased. As a result, the initial cost and operating cost of the substrate processing apparatus 1 can be suppressed from increasing, and the droplets of the processing liquid rebounded from the cup 4 are preferably guided downward to prevent the droplets from reattaching to the substrate 9.

如上所述，下部對向部37之外周面376之至少一部分位於較基板對向部35之外周緣靠徑向外側。藉此，可進而較佳地形成基板9與杯部4之間之向下之氣流。又，可使沿著下部對向部37之外周面376流動之氣流接近於基板9與杯部4之間向下流動之氣流。因此，可使沿著下部對向部37之外周面376流動之氣流對基板9與杯部4之間之向下之氣流帶來的柯恩達效應之影響變大。其結果，可使基板9與杯部4之間之向下之氣流之流速進而增大。更佳為，下部對向部37之外周面376之整體位於較基板對向部35之外周緣靠徑向外側。藉此，可使基板9與杯部4之間之向下之氣流之流速更進一步增大。 As described above, at least a part of the outer peripheral surface 376 of the lower facing portion 37 is located radially outward from the outer periphery of the substrate facing portion 35. Thereby, the downward air flow between the substrate 9 and the cup 4 can be further formed better. In addition, the airflow flowing along the outer peripheral surface 376 of the lower facing portion 37 can be made close to the airflow flowing downward between the substrate 9 and the cup portion 4. Therefore, the influence of the airflow flowing along the outer peripheral surface 376 of the lower facing portion 37 on the Coanda effect caused by the downward airflow between the substrate 9 and the cup 4 can be increased. As a result, the flow velocity of the downward air flow between the substrate 9 and the cup 4 can be further increased. More preferably, the entire outer peripheral surface 376 of the lower opposing portion 37 is located on the radially outer side of the outer peripheral edge of the substrate opposing portion 35. Thereby, the flow velocity of the downward air flow between the substrate 9 and the cup 4 can be further increased.

於基板處理裝置1中，下部間隙381之外周緣385位於較基板9之外周緣靠徑向外側。藉此，可進而較佳地形成基板9與杯部4之間之向下之氣流。又，可使沿著下部對向部37之外周面376流動之氣流接近基板9與杯部4之間之向下之氣流。其結果，對於基板9與杯部4之間之向下之氣流的柯恩達效應變大，可使該氣流之流速進而增大。於基板處理裝置1中，下部間隙381之外周緣385亦可位於與基板9之外周緣於徑向相同之位置。於該情況下，亦與上述相同地，可進而較佳地形成基板9與杯部4之間之向下之氣流。又，可使基板9與杯部4之間之向下之氣流之流速進而增大。 In the substrate processing apparatus 1, the outer peripheral edge 385 of the lower gap 381 is located on the radially outer side of the outer peripheral edge of the substrate 9. Thereby, the downward air flow between the substrate 9 and the cup 4 can be further formed better. In addition, the air flow flowing along the outer peripheral surface 376 of the lower facing portion 37 can be made close to the downward air flow between the substrate 9 and the cup portion 4. As a result, the Coanda effect on the downward air flow between the substrate 9 and the cup 4 becomes larger, and the flow velocity of the air flow can be further increased. In the substrate processing apparatus 1, the outer periphery 385 of the lower gap 381 may also be located at the same position in the radial direction as the outer periphery of the substrate 9. In this case, similarly to the above, the downward air flow between the substrate 9 and the cup 4 can be further preferably formed. In addition, the flow rate of the downward air flow between the substrate 9 and the cup 4 can be further increased.

如上所述，於基板處理裝置1中，藉由利用基板旋轉機構33而進行之基板保持部31之旋轉而形成間隙氣流。因此，無須於下部間隙381重新設置用以自徑向內側供給氣體之氣體供給機構。其結果，可簡化基板處理裝置1之構造，並且亦可降低基板處理裝置1之運轉成本。 As described above, in the substrate processing apparatus 1, the gap airflow is formed by the rotation of the substrate holding portion 31 by the substrate rotation mechanism 33. Therefore, there is no need to re-install a gas supply mechanism for supplying gas from the radially inner side in the lower gap 381. As a result, the structure of the substrate processing apparatus 1 can be simplified, and the operating cost of the substrate processing apparatus 1 can also be reduced.

於基板處理裝置1中，藉由變更基板保持部31之旋轉速度，可容易地變更間隙氣流之流速。具體而言，藉由使基板保持部31之旋轉速度增大，可使間隙氣流之流速增大。又，藉由使基板保持部31之旋轉速度減少，可使間隙氣流之流速減少。 In the substrate processing apparatus 1, by changing the rotation speed of the substrate holding portion 31, the flow velocity of the gap airflow can be easily changed. Specifically, by increasing the rotation speed of the substrate holding portion 31, the flow velocity of the gap airflow can be increased. In addition, by reducing the rotation speed of the substrate holding portion 31, the flow velocity of the gap airflow can be reduced.

例如，於使基板9之旋轉速度變小而於基板9上覆上處理液(即，盛液)時，為了抑制基板9上之液膜之徑向之溫度變化，較佳為使來自基板9之上方之降流之流速變小。於基板處理裝置1中，藉由使基板9之旋轉速度變小，而使間隙氣流之流速亦變小，該降流之流速亦變小。其結果，可較佳地進行基板9之覆液處理。另一方面，於基板9之旋轉速度較大之情況下，杯部4之處理液之彈回亦相對較大，降流之流速亦變大。其結果，可將自杯部4彈回之處理液之液滴等向下方較佳地引導。 For example, when the rotation speed of the substrate 9 is reduced and the substrate 9 is covered with a processing liquid (ie, containing liquid), in order to suppress the temperature change of the liquid film on the substrate 9 in the radial direction, it is preferable to make the substrate 9 The flow velocity of the downward flow above it becomes smaller. In the substrate processing apparatus 1, by reducing the rotation speed of the substrate 9, the flow velocity of the gap air flow is also reduced, and the flow velocity of the downflow is also reduced. As a result, the liquid coating treatment of the substrate 9 can be preferably performed. On the other hand, when the rotation speed of the substrate 9 is large, the rebound of the processing liquid in the cup 4 is relatively large, and the flow velocity of the downflow also becomes large. As a result, the droplets of the processing liquid that bounced back from the cup 4 can be better guided downward.

於基板處理裝置1中，於基板對向部35與下部對向部37之間，形成與下部間隙381之內周緣386連續之緩衝空間382。緩衝空間382之上下方向之高度較下部間隙381大。又，緩衝空間382朝向下方開口。如此，供給至下部間隙381之氣體暫時地貯存於緩衝空間382，藉此可使自徑向內側供給至下部間隙381之氣體之流量於圓周方向大致均勻。其結果，可提高間隙氣流之流速之圓周方向之均勻性。 In the substrate processing apparatus 1, between the substrate facing portion 35 and the lower facing portion 37, a buffer space 382 continuous with the inner peripheral edge 386 of the lower gap 381 is formed. The height of the buffer space 382 in the upper and lower directions is greater than that of the lower gap 381. In addition, the buffer space 382 opens downward. In this way, the gas supplied to the lower gap 381 is temporarily stored in the buffer space 382, whereby the flow rate of the gas supplied to the lower gap 381 from the radially inner side can be made substantially uniform in the circumferential direction. As a result, the uniformity of the flow velocity of the gap airflow in the circumferential direction can be improved.

如上所述，下部對向部37連接於基板對向部35，藉由基板旋轉機構33而與基板對向部35一起旋轉。藉此，無須考慮由基板對向部35之旋轉時之振動等所致之基板對向部35與下部對向部37之接觸，故而可使下部間隙381之上下方向之高度容易地變小。其結果，可使下部間隙381之間隙氣流之流速增大。 As described above, the lower facing portion 37 is connected to the substrate facing portion 35 and is rotated together with the substrate facing portion 35 by the substrate rotating mechanism 33. This eliminates the need to consider the contact between the substrate opposing section 35 and the lower opposing section 37 caused by vibration during the rotation of the substrate opposing section 35, so that the height of the lower gap 381 in the vertical direction can be easily reduced. As a result, the flow velocity of the gap airflow in the lower gap 381 can be increased.

於基板處理裝置1中，亦可將連接下部對向部37與基板對向部35之連接部353之上下方向之長度設為可變，設置變更連接部353之該長度之間隙變更機構。例如，若藉由間隙變更機構而使連接部353之長度增大，則下部對向部37向下方移動，下部間隙381之上下方向之高度變大。又，若藉由間隙變更機構而使連接部353之長度減少，則下部對向部37向上方移動，下部間隙381之上下方向之高度變小。換言之，該間隙變更機構係藉由使基板對向部35相對於下部對向部37於上下方向相對移動，而變更下部間隙381之上下方向之高度。藉此，可容易地變更間隙氣流之流速。 In the substrate processing apparatus 1, the upper and lower length of the connecting portion 353 connecting the lower facing portion 37 and the substrate facing portion 35 may be variable, and a gap changing mechanism for changing the length of the connecting portion 353 may be provided. For example, if the length of the connecting portion 353 is increased by the gap changing mechanism, the lower facing portion 37 moves downward, and the height of the lower gap 381 in the vertical direction increases. In addition, if the length of the connecting portion 353 is reduced by the gap changing mechanism, the lower facing portion 37 moves upward, and the height of the lower gap 381 in the vertical direction becomes smaller. In other words, the gap changing mechanism changes the height of the lower gap 381 in the vertical direction by relatively moving the substrate facing portion 35 with respect to the lower facing portion 37 in the vertical direction. In this way, the flow velocity of the gap air flow can be easily changed.

基板處理裝置1進而具備與下部對向部37於上下方向對向之凸座部34。於下部對向部37與凸座部34之間之間隙(即，凸座間隙342)，自徑向內側供給有沖洗氣體。而且，該沖洗氣體之一部分自徑向內側供給至下部間隙381。藉此，可防止包含處理液之液滴及霧氣而向下流動於基板9與杯部4之間之氣體經由凸座間隙342而向下部間隙381繞入並流入。其結果，可由不包含處理液之清潔之氣體形成間隙氣流。又，可防止處理液附著於下部間隙381。 The substrate processing apparatus 1 further includes a boss portion 34 that faces the lower facing portion 37 in the vertical direction. In the gap between the lower facing portion 37 and the boss portion 34 (ie, the boss gap 342), flushing gas is supplied from the radially inner side. Furthermore, a part of the flushing gas is supplied to the lower gap 381 from the radially inner side. Thereby, it is possible to prevent the gas containing the liquid droplets and mist of the treatment liquid from flowing downward between the substrate 9 and the cup 4 through the boss gap 342 to bypass the lower gap 381 and flow into it. As a result, the interstitial gas flow can be formed by a clean gas that does not contain the treatment liquid. In addition, it is possible to prevent the treatment liquid from adhering to the lower gap 381.

於基板處理裝置1中，向下通過下部對向部37之外周面376之徑向外側之氣體自杯部4向外部排出，與該氣體不同之氣體自徑向內側供給至下部間隙381。藉此，可防止包含處理液之液滴及霧氣之氣體流入至下部間隙381。其結果，可由不包含處理液之清潔之氣體形成間隙氣流。又，可防止處理液附著於下部間隙381。 In the substrate processing apparatus 1, the gas passing downward in the radial direction outside of the outer peripheral surface 376 of the lower facing portion 37 is discharged from the cup 4 to the outside, and a gas different from the gas is supplied to the lower gap 381 from the radial inside. Thereby, it is possible to prevent the gas containing the liquid droplets and mist of the treatment liquid from flowing into the lower gap 381. As a result, the interstitial gas flow can be formed by a clean gas that does not contain the treatment liquid. In addition, it is possible to prevent the treatment liquid from adhering to the lower gap 381.

如上所述，基板處理裝置1進而具備氣流形成部(即，氣體供給部55及排出埠口44)。氣流形成部形成自基板9之更上側通過基板9與杯部4之間朝向下方之氣流。於基板處理裝置1中，如上所述，由於可藉由柯恩達效應而使該氣流之流速增大，故而可降低氣流形成部之容量。其結果，可降低基板處理裝置1之初始成本及運轉成本。 As described above, the substrate processing apparatus 1 further includes an air flow forming part (that is, the gas supply part 55 and the exhaust port 44). The air flow forming portion is formed from the upper side of the substrate 9 to pass through between the substrate 9 and the cup 4 and toward the lower side. In the substrate processing apparatus 1, as described above, since the flow velocity of the air flow can be increased by the Coanda effect, the capacity of the air flow forming portion can be reduced. As a result, the initial cost and operating cost of the substrate processing apparatus 1 can be reduced.

圖3係將基板處理裝置1之其他較佳之基板保持部31a附近放大表示之縱剖面圖，且與圖2對應。圖4係基板保持部31a之仰視圖。於圖4中，利用兩點鏈線一併圖示下部對向部37。基板保持部31a除了圖2所示之基板保持部31之構成以外，進而具備鰭部356。鰭部356配置於較下部間隙381靠徑向內側。於基板保持部31a旋轉時，鰭部356與基板對向部35一起旋轉。藉此，鰭部356附近之氣體朝向下部間隙381之內周緣386向徑向外側送出。 FIG. 3 is an enlarged longitudinal sectional view showing the vicinity of another preferred substrate holding portion 31a of the substrate processing apparatus 1, and corresponds to FIG. 2. Fig. 4 is a bottom view of the substrate holding portion 31a. In FIG. 4, the lower facing portion 37 is collectively shown by a two-dot chain line. The substrate holding portion 31a further includes a fin portion 356 in addition to the structure of the substrate holding portion 31 shown in FIG. 2. The fin portion 356 is arranged on the radially inner side of the lower gap 381. When the substrate holding portion 31 a rotates, the fin portion 356 rotates together with the substrate facing portion 35. Thereby, the gas in the vicinity of the fin portion 356 is sent radially outward toward the inner peripheral edge 386 of the lower gap 381.

於圖3及圖4所示之例中，鰭部356具備於圓周方向以大致等角度間隔排列之複數個鰭元件357。複數個鰭元件357自基板對向部35之下表面352向下方突出。複數個鰭元件357位於緩衝空間382。複數個鰭元件357係以中心軸J1為中心呈大致放射狀地沿著徑向延伸。詳細而言，各鰭元件357隨著朝向徑向外側而 朝向基板保持部31a之旋轉方向(即，圖4中之逆時針)之前側彎曲。 In the example shown in FIGS. 3 and 4, the fin portion 356 includes a plurality of fin elements 357 arranged at substantially equal angular intervals in the circumferential direction. A plurality of fin elements 357 protrude downward from the lower surface 352 of the substrate facing portion 35. A plurality of fin elements 357 are located in the buffer space 382. The plurality of fin elements 357 extend in a radial direction approximately radially with the center axis J1 as the center. In detail, each fin element 357 becomes radially outward It is bent toward the front side of the rotation direction of the substrate holding portion 31a (that is, counterclockwise in FIG. 4).

如此，基板保持部31a進而具有配置於較下部間隙381靠徑向內側之鰭部356。鰭部356係藉由基板保持部31a之旋轉而朝向下部間隙381向徑向外側送出氣體。藉此，可效率良好地進行藉由基板保持部31a之旋轉而進行之氣體向下部間隙381之供給。再者，鰭元件357之形狀可多樣地變更。例如，鰭元件357亦可沿著徑向大致直線狀地延伸。 In this way, the substrate holding portion 31a further has the fin portion 356 arranged on the inner side of the lower gap 381 in the radial direction. The fin portion 356 sends out gas toward the lower gap 381 radially outward by the rotation of the substrate holding portion 31a. Thereby, the gas supply to the lower gap 381 by the rotation of the substrate holding portion 31a can be performed efficiently. Furthermore, the shape of the fin element 357 can be variously changed. For example, the fin element 357 may also extend substantially linearly along the radial direction.

圖5係將本發明之第2實施形態之基板處理裝置1a之基板保持部31附近放大表示之縱剖面圖。基板處理裝置1a除了圖1及圖2所示之基板處理裝置1之構成以外，進而具備筒狀整流部45。筒狀整流部45例如經由省略圖示之連接部而固定於下部對向部37，藉由基板旋轉機構33而與基板保持部31及下部對向部37一起旋轉。筒狀整流部45亦可獨立於基板保持部31及下部對向部37而配置，藉由基板旋轉機構33以外之旋轉機構而旋轉，或者，亦可固定於杯部4。基板處理裝置1a之其他構造係與圖1及圖2所示之基板處理裝置1大致相同。於以下之說明中，對與基板處理裝置1之各構成對應之基板處理裝置1a之構成標註相同符號。 Fig. 5 is an enlarged longitudinal sectional view showing the vicinity of the substrate holding portion 31 of the substrate processing apparatus 1a according to the second embodiment of the present invention. The substrate processing apparatus 1a further includes a cylindrical rectifying section 45 in addition to the structure of the substrate processing apparatus 1 shown in FIGS. 1 and 2. The cylindrical rectifying portion 45 is fixed to the lower facing portion 37 via a connection portion not shown, for example, and is rotated together with the substrate holding portion 31 and the lower facing portion 37 by the substrate rotating mechanism 33. The cylindrical rectifying portion 45 may be arranged independently of the substrate holding portion 31 and the lower facing portion 37 and may be rotated by a rotation mechanism other than the substrate rotation mechanism 33, or may be fixed to the cup portion 4. The other structure of the substrate processing apparatus 1a is substantially the same as that of the substrate processing apparatus 1 shown in FIGS. 1 and 2. In the following description, the structure of the substrate processing apparatus 1a corresponding to each structure of the substrate processing apparatus 1 is denoted by the same reference numerals.

筒狀整流部45係於下部對向部37與杯部4之間沿著上下方向延伸，且包圍下部對向部37之周圍。筒狀整流部45之下端緣係與下部對向部37之外周面376於徑向對向。換言之，筒狀整流部45之下端緣位於較下部對向部37之外周面376之下端緣靠上側。筒狀整流部45之上端緣與下部對向部37之間之最短距離較筒狀整流部45之下端緣與下部對向部37之外周面376之間之徑向的距離大。 The cylindrical rectifying portion 45 extends in the vertical direction between the lower opposing portion 37 and the cup portion 4 and surrounds the periphery of the lower opposing portion 37. The lower end edge of the cylindrical rectifying portion 45 is opposed to the outer peripheral surface 376 of the lower facing portion 37 in the radial direction. In other words, the lower end edge of the cylindrical rectifying portion 45 is located on the upper side than the lower end edge of the outer peripheral surface 376 of the lower opposing portion 37. The shortest distance between the upper edge of the cylindrical rectifying portion 45 and the lower facing portion 37 is greater than the radial distance between the lower end of the cylindrical rectifying portion 45 and the outer peripheral surface 376 of the lower facing portion 37.

於基板處理裝置1a中，自上方流入至筒狀整流部45之上端緣與基板保持部31之間之氣體藉由沿著下部對向部37之外周面376流動之氣流之柯恩達效應而加速，進而，於筒狀整流部45之下端緣與下部對向部37之間藉由文丘里效應(Venturi effect)而加速。藉此，筒狀整流部45之下端緣附近之壓力降低，故而可使於筒狀整流部45與杯部4之間朝向下方之氣流之流速增大。其結果，可效率良好地實現杯部4內之氣體之置換。 In the substrate processing apparatus 1a, the gas flowing from above between the upper edge of the cylindrical rectifying portion 45 and the substrate holding portion 31 is caused by the Coanda effect of the gas flowing along the outer peripheral surface 376 of the lower opposing portion 37 Accelerate, and further, accelerate by the Venturi effect between the lower end edge of the cylindrical rectifying part 45 and the lower opposite part 37. As a result, the pressure near the lower end of the cylindrical rectifying portion 45 is reduced, so that the flow velocity of the downward air flow between the cylindrical rectifying portion 45 and the cup 4 can be increased. As a result, the replacement of the gas in the cup 4 can be efficiently realized.

於圖5所示之例中，筒狀整流部45遍及全周地包圍下部對向部37及基板保持部31之整個周圍。又，筒狀整流部45之上端緣位於較基板保持部31靠上側、且較基板9靠下側。因此，自旋轉之基板9向徑向外側飛散之處理液通過筒狀整流部45之上方，藉由杯部4而被接住。如上所述，於基板處理裝置1a中，於筒狀整流部45與杯部4之間朝向下側之氣流之流速增大，故而可將撞擊杯部4之處理液之液滴等向下方較佳地引導。再者，筒狀整流部45之上端緣亦可位於較基板保持部31靠下側。或者，筒狀整流部45之上端緣亦可位於較基板9靠上側。於該情況下，自旋轉之基板9向徑向外側飛散之處理液藉由筒狀整流部45而被接住後被向下方引導。 In the example shown in FIG. 5, the cylindrical rectification|straightening part 45 surrounds the whole periphery of the lower opposing part 37 and the board|substrate holding part 31 over the whole circumference. In addition, the upper end edge of the cylindrical rectifying portion 45 is located on the upper side of the substrate holding portion 31 and on the lower side of the substrate 9. Therefore, the processing liquid scattered from the rotating substrate 9 to the radially outer side passes above the cylindrical rectifying portion 45 and is received by the cup portion 4. As described above, in the substrate processing apparatus 1a, the flow velocity of the airflow toward the lower side between the cylindrical rectifying portion 45 and the cup 4 is increased, so that the droplets of the processing liquid that hit the cup 4 can be lowered. Guided well. Furthermore, the upper edge of the cylindrical rectifying portion 45 may be located below the substrate holding portion 31. Alternatively, the upper edge of the cylindrical rectifying portion 45 may be located above the base plate 9. In this case, the processing liquid scattered radially outward from the rotating substrate 9 is received by the cylindrical rectifying portion 45 and guided downward.

圖6係將本發明之第3實施形態之基板處理裝置1b之基板保持部31附近放大表示之縱剖面圖。基板處理裝置1b除了圖1及圖2所示之基板處理裝置1之構成以外，進而具備氣體噴射部363。基板處理裝置1b之其他構造與圖1及圖2所示之基板處理裝置1大致相同。於以下之說明中，對與基板處理裝置1之各構成對應之基板處理裝置1b之構成標註相同符號。 Fig. 6 is an enlarged longitudinal sectional view showing the vicinity of the substrate holding portion 31 of the substrate processing apparatus 1b according to the third embodiment of the present invention. The substrate processing apparatus 1b further includes a gas injection unit 363 in addition to the structure of the substrate processing apparatus 1 shown in FIGS. 1 and 2. The other structure of the substrate processing apparatus 1b is substantially the same as that of the substrate processing apparatus 1 shown in FIGS. 1 and 2. In the following description, the structure of the substrate processing apparatus 1b corresponding to each structure of the substrate processing apparatus 1 is denoted by the same reference numerals.

於基板處理裝置1b中，於對向部支撐部36之中央部，主配管361延伸至對向部支撐部36之上端部為止。氣體噴射部363配置於對向部支撐部36之上端部。氣體噴射部363例如具備複數個噴射配管364。複數個噴射配管364自主配管361之上端部向徑向外側呈放射狀地延伸。複數個噴射配管364例如於圓周方向以大致等角度間隔配置。複數個噴射配管364之徑向外端位於與下部間隙381於上下方向大致相同之位置。換言之，形成於對向部支撐部36之外周面之各噴射配管364之開口係與下部間隙381於徑向對向。 In the substrate processing apparatus 1b, the main pipe 361 extends to the upper end of the opposed portion supporting portion 36 at the central portion of the opposed portion supporting portion 36. The gas injection portion 363 is arranged at the upper end portion of the opposing portion support portion 36. The gas injection unit 363 includes a plurality of injection pipes 364, for example. The plurality of injection pipes 364 extend radially outward from the upper end of the main pipe 361 in the radial direction. The plurality of injection pipes 364 are arranged at substantially equal angular intervals in the circumferential direction, for example. The radially outer ends of the plurality of injection pipes 364 are located at substantially the same position as the lower gap 381 in the vertical direction. In other words, the opening of each injection pipe 364 formed on the outer peripheral surface of the opposing portion support portion 36 is opposed to the lower gap 381 in the radial direction.

於基板處理裝置1b中，下部對向部37之第2部位372之內周緣連接於對向部支撐部36之外周面。因此，形成於基板對向部35與第2部位372之間之緩衝空間382b不朝向下方開口。 In the substrate processing apparatus 1b, the inner peripheral edge of the second portion 372 of the lower facing portion 37 is connected to the outer peripheral surface of the facing portion supporting portion 36. Therefore, the buffer space 382b formed between the substrate facing portion 35 and the second portion 372 does not open downward.

於基板處理裝置1b中，自氣體噴射部363之複數個噴射配管364向緩衝空間382b噴射氣體(例如，清潔之乾燥空氣)。而且，暫時貯存於緩衝空間382b之該氣體自徑向內側供給至下部間隙381。藉此，與上述相同地，於下部間隙381中形成朝向徑向外側之間隙氣流。自下部間隙381流出之氣流藉由柯恩達效應而沿著下部對向部37之外周面376向下方且朝徑向外側流動。 In the substrate processing apparatus 1b, gas (for example, clean dry air) is injected from the plurality of injection pipes 364 of the gas injection part 363 to the buffer space 382b. Then, the gas temporarily stored in the buffer space 382b is supplied to the lower gap 381 from the radially inner side. As a result, in the same manner as described above, a gap airflow toward the radially outer side is formed in the lower gap 381. The airflow flowing out from the lower gap 381 flows downward and radially outward along the outer peripheral surface 376 of the lower opposing portion 37 by the Coanda effect.

如以上所說明般，基板處理裝置1b進而具備朝向下部間隙381自徑向內側噴射氣體而形成間隙氣流之氣體噴射部363。藉此，與上述基板處理裝置1相同地，可較佳地形成基板9與杯部4之間之向下之氣流。又，可使形成於基板9與杯部4之間之該向下之氣流之流速增大。其結果，可抑制基板處理裝置1之初始成本及運轉成本之增大，且可抑制由杯部4彈回之處理液之液滴 等再附著於基板9。又，於基板處理裝置1b中，藉由調節自氣體噴射部363噴射之氣體之流速，而不論基板9之旋轉速度如何，均可容易地調節間隙氣流之流速。 As described above, the substrate processing apparatus 1b further includes a gas injection portion 363 that injects gas toward the lower gap 381 from the radially inner side to form a gap gas flow. Thereby, similar to the substrate processing apparatus 1 described above, a downward air flow between the substrate 9 and the cup 4 can be preferably formed. In addition, the flow velocity of the downward airflow formed between the substrate 9 and the cup 4 can be increased. As a result, an increase in the initial cost and operating cost of the substrate processing apparatus 1 can be suppressed, and droplets of the processing liquid rebounded from the cup 4 can be suppressed from adhering to the substrate 9 again. Furthermore, in the substrate processing apparatus 1b, by adjusting the flow rate of the gas injected from the gas injection portion 363, the flow rate of the gap air flow can be easily adjusted regardless of the rotation speed of the substrate 9.

如上所述，於基板處理裝置1b中，於基板對向部35與下部對向部37之間形成緩衝空間382b。緩衝空間382b係於較氣體噴射部363靠徑向外側而與下部間隙381之內周緣386連續。緩衝空間382b之上下方向之高度較下部間隙381大。於基板處理裝置1b中，自氣體噴射部363噴射之氣體於被供給至下部間隙381之前暫時地貯存於緩衝空間382b。藉此，可使自徑向內側供給至下部間隙381之氣體之流量於圓周方向大致均勻。其結果，可提高間隙氣流之流速之圓周方向之均勻性。 As described above, in the substrate processing apparatus 1b, a buffer space 382b is formed between the substrate facing portion 35 and the lower facing portion 37. The buffer space 382b is radially outward of the gas injection portion 363 and is continuous with the inner peripheral edge 386 of the lower gap 381. The height of the buffer space 382b in the upper and lower directions is greater than that of the lower gap 381. In the substrate processing apparatus 1b, the gas injected from the gas injection part 363 is temporarily stored in the buffer space 382b before being supplied to the lower gap 381. Thereby, the flow rate of the gas supplied from the radially inner side to the lower gap 381 can be made substantially uniform in the circumferential direction. As a result, the uniformity of the flow velocity of the gap airflow in the circumferential direction can be improved.

於基板處理裝置1b中，藉由控制來自氣體噴射部363之氣體之噴射流量，而將緩衝空間382b維持為正壓。藉此，可防止或抑制包含處理液之液滴及霧氣等之氣體進入至緩衝空間382b及下部間隙381。其結果，可由不包含處理液之清潔之氣體形成間隙氣流。又，可防止處理液附著於下部間隙381。 In the substrate processing apparatus 1b, the buffer space 382b is maintained at a positive pressure by controlling the injection flow rate of the gas from the gas injection part 363. Thereby, it is possible to prevent or suppress the gas including liquid droplets and mist of the treatment liquid from entering the buffer space 382b and the lower gap 381. As a result, the interstitial gas flow can be formed by a clean gas that does not contain the treatment liquid. In addition, it is possible to prevent the treatment liquid from adhering to the lower gap 381.

於基板處理裝置1b中，亦與圖5所示之基板處理裝置1a相同地，亦可於基板保持部31與杯部4之間設置筒狀整流部45。於該情況下，與上述相同地，可使於筒狀整流部45與杯部4之間朝向下方之氣流之流速增大。其結果，可效率良好地實現杯部4內之氣體之置換。 In the substrate processing apparatus 1b, similarly to the substrate processing apparatus 1a shown in FIG. 5, a cylindrical rectifying section 45 may be provided between the substrate holding section 31 and the cup section 4. In this case, in the same manner as described above, the flow velocity of the downward air flow between the cylindrical rectifying portion 45 and the cup portion 4 can be increased. As a result, the replacement of the gas in the cup 4 can be efficiently realized.

於上述基板處理裝置1、1a、1b中，能夠進行各種變更。 In the above-mentioned substrate processing apparatus 1, 1a, 1b, various changes can be made.

例如，於圖6所示之基板處理裝置1b中，緩衝空間 382b未必需要維持為正壓。又，緩衝空間382b與圖2所示之緩衝空間382相同地，亦可向下方開口。於基板處理裝置1b中，亦可未必設置緩衝空間382b。於基板處理裝置1、1a中亦相同地，亦可省略緩衝空間382。 For example, in the substrate processing apparatus 1b shown in FIG. 6, the buffer space 382b does not necessarily need to be maintained at a positive pressure. In addition, the buffer space 382b, like the buffer space 382 shown in FIG. 2, may open downward. In the substrate processing apparatus 1b, the buffer space 382b may not necessarily be provided. The same applies to the substrate processing apparatuses 1 and 1a, and the buffer space 382 may be omitted.

圖6所示之氣體噴射部363亦可設置於圖1及圖2所示之基板保持部31、及圖3所示之基板保持部31a。於該情況下，藉由基板保持部31、31a之旋轉及來自氣體噴射部363之氣體之噴射，而於下部間隙381形成間隙氣流。 The gas injection part 363 shown in FIG. 6 may also be provided in the substrate holding part 31 shown in FIGS. 1 and 2 and the substrate holding part 31a shown in FIG. 3. In this case, the rotation of the substrate holding portions 31, 31a and the injection of gas from the gas injection portion 363 form a gap airflow in the lower gap 381.

於基板處理裝置1中，亦可未必向凸座間隙342供給沖洗氣體。於基板處理裝置1a、1b中亦相同。 In the substrate processing apparatus 1, the flushing gas may not necessarily be supplied to the boss gap 342. The same applies to the substrate processing apparatuses 1a and 1b.

於基板處理裝置1中，氣流形成部未必需要具備氣體供給部55及排出埠口44。例如，亦可自氣流形成部省略氣體供給部55。於基板處理裝置1a、1b中亦相同。 In the substrate processing apparatus 1, the air flow forming part does not necessarily need to include the gas supply part 55 and the discharge port 44. For example, the gas supply part 55 may be omitted from the air flow forming part. The same applies to the substrate processing apparatuses 1a and 1b.

於基板處理裝置1中，下部對向部37之外周面376之整體亦可位於較基板對向部35之外周緣靠徑向內側。又，下部間隙381之外周緣385亦可位於較基板9之外周緣靠徑向內側。於基板處理裝置1a、1b中亦相同。 In the substrate processing apparatus 1, the entire outer peripheral surface 376 of the lower facing portion 37 may also be located on the radially inner side of the outer periphery of the substrate facing portion 35. In addition, the outer peripheral edge 385 of the lower gap 381 may be located on the radially inner side of the outer peripheral edge of the substrate 9. The same applies to the substrate processing apparatuses 1a and 1b.

下部對向部37未必需要連接於基板保持部31，亦未必需要藉由基板旋轉機構33而旋轉。例如，下部對向部37亦可獨立於基板保持部31而設置，藉由與基板旋轉機構33不同之其他旋轉機構，而與基板保持部31同步或者不與基板保持部31同步地旋轉。又，下部對向部37亦可不旋轉地固定。 The lower facing portion 37 does not necessarily need to be connected to the substrate holding portion 31, nor does it necessarily need to be rotated by the substrate rotating mechanism 33. For example, the lower facing portion 37 can also be provided independently of the substrate holding portion 31, and rotates in synchronization with the substrate holding portion 31 or not in synchronization with the substrate holding portion 31 by another rotation mechanism different from the substrate rotating mechanism 33. In addition, the lower facing portion 37 may be fixed so as not to rotate.

例如，於圖7所示之例中，基板保持部31之基板對向部35之下表面352係與凸座部34之上表面341介隔下部間隙 381a而於上下方向對向。即，於圖7所示之例中，凸座部34之上端部係與基板對向部35介隔下部間隙381a而於上下方向對向之下部對向部37a。下部對向部37a係獨立於基板保持部31之部位。下部對向部37a之外周面376自下部間隙381a之外周緣385向下方且朝徑向外側延伸。 For example, in the example shown in FIG. 7, the lower surface 352 of the substrate facing portion 35 of the substrate holding portion 31 and the upper surface 341 of the boss portion 34 are opposed to each other in the vertical direction with a lower gap 381a interposed therebetween. That is, in the example shown in FIG. 7, the upper end portion of the boss portion 34 and the substrate opposed portion 35 are opposed to the lower opposed portion 37a in the vertical direction with the lower gap 381a interposed therebetween. The lower facing portion 37a is a portion independent of the substrate holding portion 31. The outer peripheral surface 376 of the lower facing portion 37a extends downward and radially outward from the outer peripheral edge 385 of the lower gap 381a.

於下部間隙381a之徑向內側，設置與圖6相同之氣體噴射部363。藉由自氣體噴射部363朝向下部間隙381a噴射氣體，而於下部間隙381a中形成朝向徑向外側之間隙氣流。自下部間隙381a流出之氣流藉由柯恩達效應而沿著下部對向部37a之外周面376向下方且朝徑向外側流動。又，沿著下部對向部37a之外周面376流動之上述氣流之周圍之氣體藉由柯恩達效應而由該氣流引導並向下方流動。藉此，與上述基板處理裝置1相同地，可較佳地形成基板9與杯部4之間之向下之氣流。又，可使形成於基板9與杯部4之間之該向下之氣流之流速增大。 On the radially inner side of the lower gap 381a, a gas injection portion 363 similar to that shown in FIG. 6 is provided. By injecting gas from the gas injection portion 363 toward the lower gap 381a, a gap gas flow toward the radially outer side is formed in the lower gap 381a. The airflow flowing out from the lower gap 381a flows downward and radially outward along the outer peripheral surface 376 of the lower opposing portion 37a by the Coanda effect. In addition, the gas surrounding the airflow flowing along the outer peripheral surface 376 of the lower facing portion 37a is guided by the airflow by the Coanda effect and flows downward. Thereby, similar to the substrate processing apparatus 1 described above, a downward air flow between the substrate 9 and the cup 4 can be preferably formed. In addition, the flow velocity of the downward airflow formed between the substrate 9 and the cup 4 can be increased.

於圖7所示之例中，將基板保持部31於上下方向移動之間隙變更機構39設置於基板保持部31之下側。間隙變更機構39收容於凸座部34之內部。利用間隙變更機構39而使基板對向部35相對於下部對向部37a於上下方向相對移動，藉此變更下部間隙381a之上下方向之高度。藉此，可容易地變更間隙氣流之流速。 In the example shown in FIG. 7, the gap changing mechanism 39 that moves the substrate holding portion 31 in the vertical direction is provided below the substrate holding portion 31. The gap changing mechanism 39 is housed in the boss portion 34. The gap changing mechanism 39 moves the substrate facing portion 35 relative to the lower facing portion 37a in the vertical direction, thereby changing the height of the lower gap 381a in the vertical direction. In this way, the flow velocity of the gap air flow can be easily changed.

上述基板處理裝置1、1a、1b除了利用於半導體基板以外，亦可利用於液晶顯示裝置、電漿顯示器、FED(field emission display，場發射顯示器)等顯示裝置中所使用之玻璃基板之處理。或者，上述基板處理裝置1、1a、1b亦可利用於光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板及太陽電池用基板等 之處理。 The above-mentioned substrate processing apparatus 1, 1a, 1b can be used for processing glass substrates used in display devices such as liquid crystal display devices, plasma displays, and FED (field emission display) in addition to semiconductor substrates. Alternatively, the aforementioned substrate processing apparatus 1, 1a, 1b can also be used for processing substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

上述實施形態及各變形例中之構成只要相互不矛盾則可適當組合。 The configurations in the above-mentioned embodiment and each modified example can be appropriately combined as long as they do not contradict each other.

對發明進行了詳細描述並說明，但已經敍述之說明為例示性而並非限定性。因此，可謂之，只要不脫離本發明之範圍，則能夠進行多數之變形或態樣。 The invention has been described and illustrated in detail, but the description that has been described is illustrative and not restrictive. Therefore, it can be said that as long as it does not deviate from the scope of the present invention, many modifications or aspects can be made.

1‧‧‧基板處理裝置 1‧‧‧Substrate processing equipment

4‧‧‧杯部 4‧‧‧Cup Department

9‧‧‧基板 9‧‧‧Substrate

31‧‧‧基板保持部 31‧‧‧Substrate holding part

33‧‧‧基板旋轉機構 33‧‧‧Substrate rotation mechanism

34‧‧‧凸座部 34‧‧‧Protrusion

35‧‧‧基板對向部 35‧‧‧Substrate facing part

36‧‧‧對向部支撐部 36‧‧‧Opposite part support part

37‧‧‧下部對向部 37‧‧‧Lower opposite part

92‧‧‧(基板之)下表面 92‧‧‧(of the substrate) lower surface

341‧‧‧(凸座部之)上表面 341‧‧‧(Protrusion part) upper surface

342‧‧‧凸座間隙 342‧‧‧Protrusion gap

351‧‧‧(基板對向部之)上表面 351‧‧‧(of the opposite part of the substrate) upper surface

352‧‧‧(基板對向部之)下表面 352‧‧‧(of the opposite part of the substrate) lower surface

353‧‧‧連接部 353‧‧‧Connecting part

355‧‧‧基板支撐部 355‧‧‧Substrate support

361‧‧‧主配管 361‧‧‧Main Piping

362‧‧‧沖洗配管 362‧‧‧Flushing piping

371‧‧‧第1部位 371‧‧‧Part 1

372‧‧‧第2部位 372‧‧‧Section 2

373‧‧‧(下部對向部之)下表面 373‧‧‧(of the lower opposite part) lower surface

374‧‧‧(第1部位之)上表面 374‧‧‧(Part 1) Upper surface

375‧‧‧(第2部位之)上表面 375‧‧‧ (of the second part) upper surface

376‧‧‧(下部對向部之)外周面 376‧‧‧(of the lower opposite part) outer peripheral surface

381‧‧‧下部間隙 381‧‧‧Lower gap

382‧‧‧緩衝空間 382‧‧‧Buffer space

383‧‧‧凹部 383‧‧‧Concave

384‧‧‧下部開口 384‧‧‧Lower opening

385‧‧‧(下部間隙之)外周緣 385‧‧‧(of the lower gap) outer periphery

386‧‧‧(下部間隙之)內周緣 386‧‧‧(of the lower gap) inner periphery

J1‧‧‧中心軸 J1‧‧‧Central axis

Claims (18)

一種基板處理裝置，其係處理基板者；其具備有：基板保持部，其具有與基板之下表面於上下方向對向之基板對向部，以水平狀態保持上述基板；基板旋轉機構，其以朝向上下方向之中心軸為中心而使上述基板保持部旋轉；處理液供給部，其將處理液供給至上述基板；杯部，其包圍上述基板保持部之周圍；及下部對向部，其配置於上述基板對向部之下側，與上述基板對向部介隔下部間隙而於上下方向對向；於上述下部間隙中，形成自徑向內側朝向徑向外側之間隙氣流，上述下部對向部具備自上述下部間隙之外周緣向下方且朝徑向外側延伸之外周面，上述下部對向部連接於上述基板對向部，藉由上述基板旋轉機構而與上述基板對向部一起旋轉。 A substrate processing apparatus that processes substrates; it is provided with: a substrate holding portion having a substrate facing portion opposed to the lower surface of the substrate in the vertical direction to hold the substrate in a horizontal state; a substrate rotating mechanism that The substrate holding portion is rotated with the central axis facing up and down as the center; the processing liquid supply portion that supplies the processing liquid to the substrate; the cup portion that surrounds the substrate holding portion; and the lower facing portion, which is arranged On the lower side of the substrate opposing portion, the substrate opposing portion is opposed to the substrate opposing portion in the vertical direction via a lower gap; in the lower gap, a gap airflow from the radially inner side to the radially outer side is formed, and the lower portion opposes The portion includes an outer peripheral surface extending downward from the outer peripheral edge of the lower gap and radially outward, and the lower facing portion is connected to the substrate facing portion, and is rotated together with the substrate facing portion by the substrate rotating mechanism. 如請求項1之基板處理裝置，其中，上述下部對向部之上述外周面之至少一部分位於較上述基板對向部之外周緣靠徑向外側。 The substrate processing apparatus according to claim 1, wherein at least a part of the outer peripheral surface of the lower facing portion is located radially outward from the outer periphery of the substrate facing portion. 如請求項1之基板處理裝置，其中，上述下部間隙之上述外周緣位於與上述基板之外周緣於徑向相同之位置，或者位於較上述基板之上述外周緣靠徑向外側。 The substrate processing apparatus according to claim 1, wherein the outer peripheral edge of the lower gap is located at the same position in the radial direction as the outer peripheral edge of the substrate, or located radially outside of the outer peripheral edge of the substrate. 如請求項1之基板處理裝置，其中，向下通過上述下部對向部之上述外周面之徑向外側之氣體自上述杯部向外部排出， 與上述氣體不同之氣體自徑向內側供給至上述下部間隙。 The substrate processing apparatus of claim 1, wherein the gas passing downward in the radial direction of the outer peripheral surface of the lower facing portion is discharged from the cup portion to the outside, A gas different from the above-mentioned gas is supplied to the above-mentioned lower gap from the inside in the radial direction. 如請求項1之基板處理裝置，其中，進而具備間隙變更機構，該間隙變更機構藉由使上述基板對向部相對於上述下部對向部於上下方向相對移動，而變更上述下部間隙之上下方向之高度。 The substrate processing apparatus of claim 1, further comprising a gap changing mechanism that changes the upper and lower direction of the lower gap by relatively moving the substrate facing portion with respect to the lower facing portion in the vertical direction The height. 如請求項1之基板處理裝置，其中，進而具備與上述下部對向部於上下方向對向之凸座部，自徑向內側將沖洗氣體供給至上述下部對向部與上述凸座部之間之間隙，上述沖洗氣體之一部分係自徑向內側供給至上述下部間隙。 The substrate processing apparatus of claim 1, further comprising a boss portion facing the lower facing portion in the vertical direction, and flushing gas is supplied from the radially inner side between the lower facing portion and the boss portion In the gap, a part of the flushing gas is supplied from the radial inner side to the lower gap. 如請求項1之基板處理裝置，其中，藉由利用上述基板旋轉機構進行之上述基板保持部之旋轉，形成上述間隙氣流。 The substrate processing apparatus according to claim 1, wherein the gap airflow is formed by the rotation of the substrate holding portion by the substrate rotating mechanism. 如請求項7之基板處理裝置，其中，上述基板保持部進而具有鰭部，該鰭部配置於較上述下部間隙靠徑向內側，藉由上述基板保持部之旋轉，朝向上述下部間隙向徑向外側送出氣體。 The substrate processing apparatus according to claim 7, wherein the substrate holding portion further has a fin portion arranged on a radially inner side of the lower gap, and the fin portion is arranged radially toward the lower gap by the rotation of the substrate holding portion Gas is sent from the outside. 如請求項7之基板處理裝置，其中，於上述基板對向部與上述下部對向部之間，形成有與上述下部間隙之內周緣連續並且上下方向之高度較上述下部間隙大之緩衝空間，上述緩衝空間朝向下方開口。 The substrate processing apparatus according to claim 7, wherein a buffer space is formed between the substrate facing portion and the lower facing portion, which is continuous with the inner periphery of the lower gap and whose height in the vertical direction is larger than that of the lower gap, The above-mentioned buffer space opens downward. 如請求項1之基板處理裝置，其中，進而具備氣體噴射部，該氣體噴射部朝向上述下部間隙自徑向內 側噴射氣體而形成上述間隙氣流。 The substrate processing apparatus according to claim 1, which further includes a gas injection portion that faces the lower gap from the radial direction inward The gas is injected from the side to form the above-mentioned gap gas flow. 如請求項10之基板處理裝置，其中，於上述基板對向部與上述下部對向部之間，形成有於較上述氣體噴射部靠徑向外側與上述下部間隙之內周緣連續、並且上下方向之高度較上述下部間隙大之緩衝空間。 The substrate processing apparatus according to claim 10, wherein, between the substrate facing portion and the lower facing portion, is formed radially outward than the gas injection portion to be continuous with the inner peripheral edge of the lower gap, and in a vertical direction The height of the buffer space is larger than the above-mentioned lower gap. 如請求項11之基板處理裝置，其中，藉由控制來自上述氣體噴射部之氣體之噴射流量，將上述緩衝空間維持為正壓。 The substrate processing apparatus of claim 11, wherein the buffer space is maintained at a positive pressure by controlling the injection flow rate of the gas from the gas injection unit. 如請求項1至12中任一項之基板處理裝置，其中，進而具備筒狀整流部，該筒狀整流部於上述下部對向部與上述杯部之間沿著上下方向延伸，包圍上述下部對向部之周圍，上述筒狀整流部之下端緣與上述下部對向部之上述外周面於徑向對向，上述筒狀整流部之上端緣與上述下部對向部之間之最短距離，較上述筒狀整流部之上述下端緣與上述下部對向部之上述外周面之間之徑向的距離更大。 The substrate processing apparatus according to any one of claims 1 to 12, further comprising a cylindrical rectifying portion extending in the vertical direction between the lower opposing portion and the cup portion, and surrounding the lower portion Around the opposed portion, the lower end edge of the cylindrical rectifying portion and the outer peripheral surface of the lower opposed portion are opposed in the radial direction, and the shortest distance between the upper end edge of the cylindrical rectifying portion and the lower opposed portion, The distance in the radial direction between the lower end edge of the cylindrical rectifying portion and the outer peripheral surface of the lower facing portion is larger. 如請求項1至12中任一項之基板處理裝置，其中，進而具備氣流形成部，該氣流形成部形成自較上述基板靠上側通過上述基板與上述杯部之間並朝向下方之氣流。 The substrate processing apparatus according to any one of claims 1 to 12, further comprising an air flow forming portion forming an air flow that passes between the substrate and the cup portion from the upper side of the substrate and goes downward. 一種基板處理裝置，其係處理基板者；其具備有：基板保持部，其具有與基板之下表面於上下方向對向之基板對向部，以水平狀態保持上述基板；基板旋轉機構，其以朝向上下方向之中心軸為中心而使上述基板保持部旋轉； 處理液供給部，其將處理液供給至上述基板；杯部，其包圍上述基板保持部之周圍；及下部對向部，其配置於上述基板對向部之下側，與上述基板對向部介隔下部間隙而於上下方向對向；於上述下部間隙中，形成自徑向內側朝向徑向外側之間隙氣流，上述下部對向部具備自上述下部間隙之外周緣向下方且朝徑向外側延伸之外周面，藉由利用上述基板旋轉機構進行之上述基板保持部之旋轉，形成上述間隙氣流，於上述基板對向部與上述下部對向部之間，形成有與上述下部間隙之內周緣連續並且上下方向之高度較上述下部間隙大之緩衝空間，上述緩衝空間朝向下方開口。 A substrate processing apparatus that processes substrates; it is provided with: a substrate holding portion having a substrate facing portion opposed to the lower surface of the substrate in the vertical direction to hold the substrate in a horizontal state; a substrate rotating mechanism that Rotating the above-mentioned substrate holding portion with the central axis facing up and down as the center; A processing liquid supply part, which supplies the processing liquid to the substrate; a cup part, which surrounds the periphery of the substrate holding part; and a lower facing part, which is arranged on the lower side of the substrate facing part and is opposite to the substrate facing part The lower gap is interposed and opposed in the vertical direction; in the lower gap, a gap airflow is formed from the radially inner side to the radially outer side, and the lower opposing portion is provided with downward and radially outward from the outer periphery of the lower gap Extend the outer peripheral surface, by rotating the substrate holding portion by the substrate rotating mechanism, the gap airflow is formed, and an inner peripheral edge of the gap with the lower portion is formed between the substrate opposing portion and the lower opposing portion The buffer space is continuous and the height in the vertical direction is larger than the lower gap, and the buffer space opens downward. 一種基板處理裝置，其係處理基板者；其具備有：基板保持部，其具有與基板之下表面於上下方向對向之基板對向部，以水平狀態保持上述基板；基板旋轉機構，其以朝向上下方向之中心軸為中心而使上述基板保持部旋轉；處理液供給部，其將處理液供給至上述基板；杯部，其包圍上述基板保持部之周圍；及下部對向部，其配置於上述基板對向部之下側，與上述基板對向部介隔下部間隙而於上下方向對向；於上述下部間隙中，形成自徑向內側朝向徑向外側之間隙氣流，上述下部對向部具備自上述下部間隙之外周緣向下方且朝徑向 外側延伸之外周面，上述基板處理裝置進而具備氣體噴射部，該氣體噴射部朝向上述下部間隙自徑向內側噴射氣體而形成上述間隙氣流，於上述基板對向部與上述下部對向部之間，形成有於較上述氣體噴射部靠徑向外側與上述下部間隙之內周緣連續、並且上下方向之高度較上述下部間隙大之緩衝空間。 A substrate processing apparatus that processes substrates; it is provided with: a substrate holding portion having a substrate facing portion opposed to the lower surface of the substrate in the vertical direction to hold the substrate in a horizontal state; a substrate rotating mechanism that The substrate holding portion is rotated with the central axis facing up and down as the center; the processing liquid supply portion that supplies the processing liquid to the substrate; the cup portion that surrounds the substrate holding portion; and the lower facing portion, which is arranged On the lower side of the substrate opposing portion, the substrate opposing portion is opposed to the substrate opposing portion in the vertical direction via a lower gap; in the lower gap, a gap airflow is formed from the radial inner side to the radial outer side, and the lower portion is opposed The part is provided with downward and radial direction from the outer peripheral edge of the above-mentioned lower gap Extending the outer peripheral surface from the outside, the substrate processing apparatus further includes a gas injection portion that injects gas from the radially inner side toward the lower gap to form the gap gas flow between the substrate facing portion and the lower facing portion A buffer space is formed that is continuous with the inner peripheral edge of the lower gap on the radially outer side of the gas injection portion and has a height in the vertical direction larger than that of the lower gap. 如請求項16之基板處理裝置，其中，藉由控制來自上述氣體噴射部之氣體之噴射流量，將上述緩衝空間維持為正壓。 The substrate processing apparatus of claim 16, wherein the buffer space is maintained at a positive pressure by controlling the injection flow rate of the gas from the gas injection unit. 一種基板處理裝置，其係處理基板者；其具備有：基板保持部，其具有與基板之下表面於上下方向對向之基板對向部，以水平狀態保持上述基板；基板旋轉機構，其以朝向上下方向之中心軸為中心而使上述基板保持部旋轉；處理液供給部，其將處理液供給至上述基板；杯部，其包圍上述基板保持部之周圍；下部對向部，其配置於上述基板對向部之下側，與上述基板對向部介隔下部間隙而於上下方向對向；及筒狀整流部，其於上述下部對向部與上述杯部之間沿著上下方向延伸，包圍上述下部對向部之周圍；於上述下部間隙中，形成自徑向內側朝向徑向外側之間隙氣流，上述下部對向部具備自上述下部間隙之外周緣向下方且朝徑向外側延伸之外周面，上述筒狀整流部之下端緣與上述下部對向部之上述外周面於徑 向對向，上述筒狀整流部之上端緣與上述下部對向部之間之最短距離，較上述筒狀整流部之上述下端緣與上述下部對向部之上述外周面之間之徑向的距離更大。 A substrate processing apparatus that processes substrates; it is provided with: a substrate holding portion having a substrate facing portion opposed to the lower surface of the substrate in the vertical direction to hold the substrate in a horizontal state; a substrate rotating mechanism that The substrate holding portion is rotated with the central axis facing up and down as the center; the processing liquid supply portion, which supplies the processing liquid to the substrate; the cup portion, which surrounds the periphery of the substrate holding portion; the lower facing portion, which is arranged at The lower side of the substrate facing portion is opposed to the substrate facing portion in the vertical direction via a lower gap; and a cylindrical rectifying portion that extends in the vertical direction between the lower facing portion and the cup portion , Surrounding the periphery of the lower facing portion; in the lower gap, a gap airflow from the radially inner side to the radially outer side is formed, and the lower facing portion is provided with extending downward and radially outward from the outer periphery of the lower gap The outer peripheral surface, the lower end edge of the cylindrical rectifying part and the outer peripheral surface of the lower facing part are in diameter The shortest distance between the upper end edge of the cylindrical rectifying portion and the lower facing portion is greater than the radial distance between the lower end edge of the cylindrical rectifying portion and the outer peripheral surface of the lower facing portion The distance is greater.
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