TWI539604B - 半導體裝置及其製造方法 - Google Patents

半導體裝置及其製造方法 Download PDF

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Publication number
TWI539604B
TWI539604B TW099129684A TW99129684A TWI539604B TW I539604 B TWI539604 B TW I539604B TW 099129684 A TW099129684 A TW 099129684A TW 99129684 A TW99129684 A TW 99129684A TW I539604 B TWI539604 B TW I539604B
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TW
Taiwan
Prior art keywords
insulating layer
layer
oxide
oxide semiconductor
electrode
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TW099129684A
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English (en)
Chinese (zh)
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TW201126721A (en
Inventor
山崎舜平
坂田淳一郎
野田耕生
坂倉真之
及川欣聰
丸山穗高
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半導體能源研究所股份有限公司
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Publication of TW201126721A publication Critical patent/TW201126721A/zh
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/01Manufacture or treatment
    • H10D30/021Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6729Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739Conductor-insulator-semiconductor electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/674Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48Insulating materials thereof

Landscapes

  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Physical Vapour Deposition (AREA)
TW099129684A 2009-09-04 2010-09-02 半導體裝置及其製造方法 TWI539604B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009205222 2009-09-04

Publications (2)

Publication Number Publication Date
TW201126721A TW201126721A (en) 2011-08-01
TWI539604B true TWI539604B (zh) 2016-06-21

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
TW099129684A TWI539604B (zh) 2009-09-04 2010-09-02 半導體裝置及其製造方法
TW105110302A TWI604617B (zh) 2009-09-04 2010-09-02 半導體裝置及其製造方法
TW102116052A TWI418040B (zh) 2009-09-04 2010-09-02 半導體裝置及其製造方法

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TW105110302A TWI604617B (zh) 2009-09-04 2010-09-02 半導體裝置及其製造方法
TW102116052A TWI418040B (zh) 2009-09-04 2010-09-02 半導體裝置及其製造方法

Country Status (6)

Country Link
US (3) US8541780B2 (https=)
JP (9) JP4967053B2 (https=)
KR (2) KR101836532B1 (https=)
CN (3) CN105810753A (https=)
TW (3) TWI539604B (https=)
WO (1) WO2011027723A1 (https=)

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TWI745515B (zh) * 2017-12-22 2021-11-11 啟耀光電股份有限公司 電子裝置與其製造方法
KR102797576B1 (ko) 2018-03-23 2025-04-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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CN111970816B (zh) * 2020-08-27 2022-01-25 合肥鑫晟光电科技有限公司 驱动电路背板、及其制备方法、背光模组
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