TWI485805B - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

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Publication number
TWI485805B
TWI485805B TW097122676A TW97122676A TWI485805B TW I485805 B TWI485805 B TW I485805B TW 097122676 A TW097122676 A TW 097122676A TW 97122676 A TW97122676 A TW 97122676A TW I485805 B TWI485805 B TW I485805B
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TW
Taiwan
Prior art keywords
semiconductor
substrate
region
ions
layer
Prior art date
Application number
TW097122676A
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English (en)
Chinese (zh)
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TW200917416A (en
Inventor
下村明久
宮入秀和
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW200917416A publication Critical patent/TW200917416A/zh
Application granted granted Critical
Publication of TWI485805B publication Critical patent/TWI485805B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/208—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically inactive species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H10P36/07—Gettering within semiconductor bodies within silicon bodies of silicon-on-insulator structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
TW097122676A 2007-06-20 2008-06-18 半導體裝置的製造方法 TWI485805B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007162464 2007-06-20
JP2007162444 2007-06-20

Publications (2)

Publication Number Publication Date
TW200917416A TW200917416A (en) 2009-04-16
TWI485805B true TWI485805B (zh) 2015-05-21

Family

ID=40136912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097122676A TWI485805B (zh) 2007-06-20 2008-06-18 半導體裝置的製造方法

Country Status (7)

Country Link
US (2) US8093135B2 (https=)
JP (1) JP5383098B2 (https=)
KR (1) KR101478813B1 (https=)
CN (2) CN102592977B (https=)
SG (1) SG182214A1 (https=)
TW (1) TWI485805B (https=)
WO (1) WO2008156040A1 (https=)

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US8431451B2 (en) 2007-06-29 2013-04-30 Semicondutor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
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JP5452900B2 (ja) * 2007-09-21 2014-03-26 株式会社半導体エネルギー研究所 半導体膜付き基板の作製方法
US8236668B2 (en) * 2007-10-10 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2009135453A (ja) * 2007-10-30 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法、半導体装置及び電子機器
JP2010153802A (ja) 2008-11-20 2010-07-08 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
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CN102576735B (zh) * 2009-09-30 2016-01-20 大日本印刷株式会社 挠性装置用基板、挠性装置用薄膜晶体管基板、挠性装置、薄膜元件用基板、薄膜元件、薄膜晶体管、薄膜元件用基板的制造方法、薄膜元件的制造方法及薄膜晶体管的制造方法
US8288249B2 (en) * 2010-01-26 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
US8461017B2 (en) 2010-07-19 2013-06-11 Soitec Methods of forming bonded semiconductor structures using a temporary carrier having a weakened ion implant region for subsequent separation along the weakened region
US8835955B2 (en) * 2010-11-01 2014-09-16 Translucent, Inc. IIIOxNy on single crystal SOI substrate and III n growth platform
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
CN103137537B (zh) * 2011-11-28 2015-04-15 中国科学院上海微系统与信息技术研究所 一种图形化全耗尽绝缘体上Si/CoSi2衬底材料及其制备方法
US9178042B2 (en) * 2013-01-08 2015-11-03 Globalfoundries Inc Crystalline thin-film transistor
US9577110B2 (en) 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
JP6471650B2 (ja) * 2015-08-27 2019-02-20 株式会社Sumco Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
JP6524862B2 (ja) * 2015-08-27 2019-06-05 株式会社Sumco Ｓｏｉウェーハの製造方法およびｓｏｉウェーハ
CN108028214B (zh) * 2015-12-30 2022-04-08 玛特森技术公司 用于毫秒退火系统的气体流动控制
US9966301B2 (en) * 2016-06-27 2018-05-08 New Fab, LLC Reduced substrate effects in monolithically integrated RF circuits
JP2019054153A (ja) * 2017-09-15 2019-04-04 東芝メモリ株式会社 半導体装置の製造方法
JP6680378B2 (ja) * 2019-03-13 2020-04-15 株式会社Sumco Ｓｏｉウェーハ
US11030426B2 (en) * 2019-10-24 2021-06-08 Asianlink Technology Incorporation Electronic book for detecting page codes by using wireless radio-frequency technology

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TWI226674B (en) * 1998-05-15 2005-01-11 Siemens Ag SOI-semiconductor arrangement and its production method
JP2001035787A (ja) * 1998-07-15 2001-02-09 Semiconductor Energy Lab Co Ltd 結晶性半導体薄膜及びその作製方法並びに半導体装置及びその作製方法
JP2000106424A (ja) * 1998-07-29 2000-04-11 Semiconductor Energy Lab Co Ltd Ｓｏｉ基板の作製方法及び半導体装置の作製方法
US20070108510A1 (en) * 1998-07-29 2007-05-17 Takeshi Fukunaga Process for production of SOI substrate and process for production of semiconductor device
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JP2002343799A (ja) * 2001-05-17 2002-11-29 Nec Corp Ｓｏｉ基板及び半導体装置の製造方法
JP2003282885A (ja) * 2002-03-26 2003-10-03 Sharp Corp 半導体装置およびその製造方法
TWI235486B (en) * 2002-03-26 2005-07-01 Sharp Kk Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP2004087606A (ja) * 2002-08-23 2004-03-18 Sharp Corp Ｓｏｉ基板およびそれを用いる表示装置ならびにｓｏｉ基板の製造方法
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Also Published As

Publication number Publication date
US8093135B2 (en) 2012-01-10
CN102592977B (zh) 2015-03-25
WO2008156040A1 (en) 2008-12-24
CN102592977A (zh) 2012-07-18
SG182214A1 (en) 2012-07-30
CN101681843B (zh) 2012-05-09
US8551828B2 (en) 2013-10-08
KR101478813B1 (ko) 2015-01-02
TW200917416A (en) 2009-04-16
JP5383098B2 (ja) 2014-01-08
KR20100033408A (ko) 2010-03-29
CN101681843A (zh) 2010-03-24
US20080318367A1 (en) 2008-12-25
JP2009027156A (ja) 2009-02-05
US20110117708A1 (en) 2011-05-19

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