DE602005025015D1 - Plasma-dotierungsverfahren - Google Patents
Plasma-dotierungsverfahrenInfo
- Publication number
- DE602005025015D1 DE602005025015D1 DE602005025015T DE602005025015T DE602005025015D1 DE 602005025015 D1 DE602005025015 D1 DE 602005025015D1 DE 602005025015 T DE602005025015 T DE 602005025015T DE 602005025015 T DE602005025015 T DE 602005025015T DE 602005025015 D1 DE602005025015 D1 DE 602005025015D1
- Authority
- DE
- Germany
- Prior art keywords
- doping method
- plasma doping
- plasma
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Drying Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004360122 | 2004-12-13 | ||
JP2005128301 | 2005-04-26 | ||
PCT/JP2005/022799 WO2006064772A1 (ja) | 2004-12-13 | 2005-12-12 | プラズマドーピング方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005025015D1 true DE602005025015D1 (de) | 2011-01-05 |
Family
ID=36587827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005025015T Active DE602005025015D1 (de) | 2004-12-13 | 2005-12-12 | Plasma-dotierungsverfahren |
Country Status (8)
Country | Link |
---|---|
US (3) | US7407874B2 (de) |
EP (1) | EP1826814B8 (de) |
JP (1) | JP5102495B2 (de) |
KR (1) | KR101123788B1 (de) |
DE (1) | DE602005025015D1 (de) |
SG (1) | SG144152A1 (de) |
TW (1) | TWI390610B (de) |
WO (1) | WO2006064772A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200423185A (en) | 2003-02-19 | 2004-11-01 | Matsushita Electric Ind Co Ltd | Method of introducing impurity |
KR101107766B1 (ko) * | 2003-10-09 | 2012-01-20 | 파나소닉 주식회사 | 접합 형성 방법 및 이를 이용하여 형성된 피처리물 |
JPWO2005119745A1 (ja) * | 2004-06-04 | 2008-04-03 | 松下電器産業株式会社 | 不純物導入方法 |
KR101123788B1 (ko) * | 2004-12-13 | 2012-03-12 | 파나소닉 주식회사 | 플라즈마 도핑 방법 |
SG163544A1 (en) | 2005-03-30 | 2010-08-30 | Panasonic Corp | Impurity introducing apparatus and impurity introducing method |
KR20070115907A (ko) * | 2005-03-31 | 2007-12-06 | 마쯔시다덴기산교 가부시키가이샤 | 플라즈마 도핑 방법 및 장치 |
US7588990B2 (en) * | 2006-08-31 | 2009-09-15 | Applied Materials, Inc. | Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer |
US20080075880A1 (en) * | 2006-09-26 | 2008-03-27 | Anthony Renau | Non-doping implantation process utilizing a plasma ion implantation system |
WO2008041702A1 (fr) * | 2006-10-03 | 2008-04-10 | Panasonic Corporation | Procédé et appareil de dopage de plasma |
WO2008059827A1 (fr) * | 2006-11-15 | 2008-05-22 | Panasonic Corporation | Procédé de dopage de plasma |
JP4866918B2 (ja) | 2007-01-22 | 2012-02-01 | パナソニック株式会社 | 半導体装置 |
US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
WO2008156040A1 (en) * | 2007-06-20 | 2008-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US8063437B2 (en) | 2007-07-27 | 2011-11-22 | Panasonic Corporation | Semiconductor device and method for producing the same |
KR20100048954A (ko) | 2007-07-27 | 2010-05-11 | 파나소닉 주식회사 | 반도체장치 및 그 제조방법 |
US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
US20090104719A1 (en) * | 2007-10-23 | 2009-04-23 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping System with In-Situ Chamber Condition Monitoring |
KR100908820B1 (ko) * | 2007-11-01 | 2009-07-21 | 주식회사 하이닉스반도체 | 플라즈마 도핑 방법 및 그를 이용한 반도체 소자의제조방법 |
US8030187B2 (en) | 2007-12-28 | 2011-10-04 | Panasonic Corporation | Method for manufacturing semiconductor device |
JP2011527124A (ja) * | 2008-07-06 | 2011-10-20 | アイメック | 半導体構造のドープ方法およびその半導体デバイス |
CN102124543B (zh) * | 2008-08-15 | 2013-03-13 | 株式会社爱发科 | 等离子体掺杂方法及半导体装置的制造方法 |
JP5457045B2 (ja) | 2009-02-12 | 2014-04-02 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7994016B2 (en) * | 2009-11-11 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for obtaining quality ultra-shallow doped regions and device having same |
JP2011129678A (ja) | 2009-12-17 | 2011-06-30 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2013051221A (ja) | 2009-12-28 | 2013-03-14 | Panasonic Corp | 半導体装置の製造方法及びプラズマドーピング装置 |
US8796124B2 (en) | 2011-10-25 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping method in 3D semiconductor device |
US8574995B2 (en) | 2011-11-10 | 2013-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain doping method in 3D devices |
GB201202128D0 (en) * | 2012-02-08 | 2012-03-21 | Univ Leeds | Novel material |
US9224644B2 (en) | 2012-12-26 | 2015-12-29 | Intermolecular, Inc. | Method to control depth profiles of dopants using a remote plasma source |
US9558946B2 (en) * | 2014-10-03 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods of forming FinFETs |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912065A (en) * | 1987-05-28 | 1990-03-27 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
KR930003857B1 (ko) * | 1987-08-05 | 1993-05-14 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마 도우핑방법 |
JPH04368763A (ja) | 1991-06-17 | 1992-12-21 | Matsushita Electric Ind Co Ltd | イオン照射処理装置 |
JPH0536620A (ja) | 1991-07-25 | 1993-02-12 | Canon Inc | 半導体表面処理方法及び装置 |
US5572038A (en) * | 1993-05-07 | 1996-11-05 | Varian Associates, Inc. | Charge monitor for high potential pulse current dose measurement apparatus and method |
US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
US5851906A (en) * | 1995-08-10 | 1998-12-22 | Matsushita Electric Industrial Co., Ltd. | Impurity doping method |
JP3340318B2 (ja) | 1995-08-10 | 2002-11-05 | 松下電器産業株式会社 | 不純物導入装置及び不純物導入方法 |
US7118996B1 (en) * | 1996-05-15 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
JPH1154451A (ja) * | 1997-08-07 | 1999-02-26 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP2000114198A (ja) | 1998-10-05 | 2000-04-21 | Matsushita Electric Ind Co Ltd | 表面処理方法および装置 |
US6383901B1 (en) * | 2001-01-25 | 2002-05-07 | Macronix International Co., Ltd. | Method for forming the ultra-shallow junction by using the arsenic plasma |
US6531367B2 (en) * | 2001-03-20 | 2003-03-11 | Macronix International Co., Ltd. | Method for forming ultra-shallow junction by boron plasma doping |
CN1509494A (zh) * | 2001-04-09 | 2004-06-30 | ���µ�����ҵ��ʽ���� | 表面处理方法和半导体装置的制造装置 |
US20020187614A1 (en) * | 2001-04-16 | 2002-12-12 | Downey Daniel F. | Methods for forming ultrashallow junctions with low sheet resistance |
US7135423B2 (en) * | 2002-05-09 | 2006-11-14 | Varian Semiconductor Equipment Associates, Inc | Methods for forming low resistivity, ultrashallow junctions with low damage |
KR100827670B1 (ko) * | 2002-06-26 | 2008-05-07 | 세미이큅, 인코포레이티드 | 이온 소스 |
JP4013674B2 (ja) | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
US7238597B2 (en) * | 2002-09-27 | 2007-07-03 | Brontek Delta Corporation | Boron ion delivery system |
FR2847383B1 (fr) * | 2002-11-14 | 2005-04-15 | St Microelectronics Sa | Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor |
JP4544447B2 (ja) * | 2002-11-29 | 2010-09-15 | パナソニック株式会社 | プラズマドーピング方法 |
US20040147070A1 (en) * | 2003-01-24 | 2004-07-29 | National Chiao-Tung University | Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layer |
TW200423185A (en) * | 2003-02-19 | 2004-11-01 | Matsushita Electric Ind Co Ltd | Method of introducing impurity |
JP2005005328A (ja) | 2003-06-09 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 不純物導入方法、不純物導入装置およびこれを用いて形成された半導体装置 |
WO2005020306A1 (ja) | 2003-08-25 | 2005-03-03 | Matsushita Electric Industrial Co., Ltd. | 不純物導入層の形成方法及び被処理物の洗浄方法並びに不純物導入装置及びデバイスの製造方法 |
US20050045507A1 (en) * | 2003-08-29 | 2005-03-03 | Meyer Scott Edward | Storage box for HotWheelsR or MatchboxR die-cast model vehicles |
KR101076516B1 (ko) * | 2003-09-08 | 2011-10-24 | 파나소닉 주식회사 | 플라즈마 처리방법 및 장치 |
JP4303662B2 (ja) | 2003-09-08 | 2009-07-29 | パナソニック株式会社 | プラズマ処理方法 |
KR101123788B1 (ko) * | 2004-12-13 | 2012-03-12 | 파나소닉 주식회사 | 플라즈마 도핑 방법 |
CN101203933B (zh) * | 2005-03-15 | 2010-05-19 | 瓦里安半导体设备公司 | 等离子体离子植入中的轮廓调整 |
US7601404B2 (en) * | 2005-06-09 | 2009-10-13 | United Microelectronics Corp. | Method for switching decoupled plasma nitridation processes of different doses |
US7879701B2 (en) * | 2005-06-30 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2005
- 2005-12-12 KR KR1020077013165A patent/KR101123788B1/ko not_active IP Right Cessation
- 2005-12-12 WO PCT/JP2005/022799 patent/WO2006064772A1/ja active Application Filing
- 2005-12-12 SG SG200804532-0A patent/SG144152A1/en unknown
- 2005-12-12 EP EP05814536A patent/EP1826814B8/de not_active Expired - Fee Related
- 2005-12-12 JP JP2006548833A patent/JP5102495B2/ja not_active Expired - Fee Related
- 2005-12-12 DE DE602005025015T patent/DE602005025015D1/de active Active
- 2005-12-13 TW TW094144014A patent/TWI390610B/zh not_active IP Right Cessation
-
2006
- 2006-12-29 US US11/647,149 patent/US7407874B2/en not_active Expired - Fee Related
-
2007
- 2007-04-30 US US11/741,861 patent/US7348264B2/en not_active Expired - Fee Related
-
2008
- 2008-06-16 US US12/139,968 patent/US20080318399A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1826814A1 (de) | 2007-08-29 |
EP1826814A4 (de) | 2008-07-02 |
JP5102495B2 (ja) | 2012-12-19 |
KR20070086048A (ko) | 2007-08-27 |
WO2006064772A1 (ja) | 2006-06-22 |
US20080318399A1 (en) | 2008-12-25 |
US7348264B2 (en) | 2008-03-25 |
US20070190759A1 (en) | 2007-08-16 |
US7407874B2 (en) | 2008-08-05 |
TW200633025A (en) | 2006-09-16 |
SG144152A1 (en) | 2008-07-29 |
KR101123788B1 (ko) | 2012-03-12 |
US20070166846A1 (en) | 2007-07-19 |
EP1826814B1 (de) | 2010-11-24 |
JPWO2006064772A1 (ja) | 2008-06-12 |
EP1826814B8 (de) | 2011-04-13 |
TWI390610B (zh) | 2013-03-21 |
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