SG144152A1 - Plasma doping method - Google Patents
Plasma doping methodInfo
- Publication number
- SG144152A1 SG144152A1 SG200804532-0A SG2008045320A SG144152A1 SG 144152 A1 SG144152 A1 SG 144152A1 SG 2008045320 A SG2008045320 A SG 2008045320A SG 144152 A1 SG144152 A1 SG 144152A1
- Authority
- SG
- Singapore
- Prior art keywords
- dose
- time
- doping method
- substantially uniform
- made substantially
- Prior art date
Links
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32412—Plasma immersion ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004360122 | 2004-12-13 | ||
JP2005128301 | 2005-04-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG144152A1 true SG144152A1 (en) | 2008-07-29 |
Family
ID=36587827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200804532-0A SG144152A1 (en) | 2004-12-13 | 2005-12-12 | Plasma doping method |
Country Status (8)
Country | Link |
---|---|
US (3) | US7407874B2 (de) |
EP (1) | EP1826814B8 (de) |
JP (1) | JP5102495B2 (de) |
KR (1) | KR101123788B1 (de) |
DE (1) | DE602005025015D1 (de) |
SG (1) | SG144152A1 (de) |
TW (1) | TWI390610B (de) |
WO (1) | WO2006064772A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200423185A (en) * | 2003-02-19 | 2004-11-01 | Matsushita Electric Ind Co Ltd | Method of introducing impurity |
TW200520063A (en) * | 2003-10-09 | 2005-06-16 | Matsushita Electric Ind Co Ltd | Junction-forming method and object to be processed and formed by using the same |
US20080194086A1 (en) * | 2004-06-04 | 2008-08-14 | Yuichiro Sasaki | Method of Introducing Impurity |
WO2006064772A1 (ja) * | 2004-12-13 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | プラズマドーピング方法 |
EP1865537A1 (de) | 2005-03-30 | 2007-12-12 | Matsushita Electric Industrial Co., Ltd. | Vorrichtung zur einführung von unreinheiten und verfahren zum einführen von unreinheiten |
EP1865544A4 (de) * | 2005-03-31 | 2010-12-22 | Panasonic Corp | Plasma-dotierungsverfahren und -vorrichtung |
US7588990B2 (en) * | 2006-08-31 | 2009-09-15 | Applied Materials, Inc. | Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layer |
US20080075880A1 (en) * | 2006-09-26 | 2008-03-27 | Anthony Renau | Non-doping implantation process utilizing a plasma ion implantation system |
CN101356625B (zh) * | 2006-10-03 | 2012-05-23 | 松下电器产业株式会社 | 等离子体掺杂方法以及装置 |
JP5237820B2 (ja) * | 2006-11-15 | 2013-07-17 | パナソニック株式会社 | プラズマドーピング方法 |
CN101601138B (zh) * | 2007-01-22 | 2012-07-25 | 松下电器产业株式会社 | 半导体装置及其制造方法 |
US7820533B2 (en) * | 2007-02-16 | 2010-10-26 | Varian Semiconductor Equipment Associates, Inc. | Multi-step plasma doping with improved dose control |
WO2008156040A1 (en) * | 2007-06-20 | 2008-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US8063437B2 (en) | 2007-07-27 | 2011-11-22 | Panasonic Corporation | Semiconductor device and method for producing the same |
US8004045B2 (en) | 2007-07-27 | 2011-08-23 | Panasonic Corporation | Semiconductor device and method for producing the same |
JP4814960B2 (ja) | 2007-07-27 | 2011-11-16 | パナソニック株式会社 | 半導体装置の製造方法 |
US20090104719A1 (en) * | 2007-10-23 | 2009-04-23 | Varian Semiconductor Equipment Associates, Inc. | Plasma Doping System with In-Situ Chamber Condition Monitoring |
KR100908820B1 (ko) * | 2007-11-01 | 2009-07-21 | 주식회사 하이닉스반도체 | 플라즈마 도핑 방법 및 그를 이용한 반도체 소자의제조방법 |
WO2009084130A1 (ja) | 2007-12-28 | 2009-07-09 | Panasonic Corporation | 半導体装置の製造方法 |
EP2311072B1 (de) * | 2008-07-06 | 2013-09-04 | Imec | Verfahren zum dotieren von halbleiterstrukturen |
WO2010018797A1 (ja) | 2008-08-15 | 2010-02-18 | 株式会社アルバック | プラズマドーピング方法及び半導体装置の製造方法 |
JP5457045B2 (ja) | 2009-02-12 | 2014-04-02 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US7994016B2 (en) * | 2009-11-11 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for obtaining quality ultra-shallow doped regions and device having same |
JP2011129678A (ja) | 2009-12-17 | 2011-06-30 | Panasonic Corp | 半導体装置及びその製造方法 |
JP2013051221A (ja) | 2009-12-28 | 2013-03-14 | Panasonic Corp | 半導体装置の製造方法及びプラズマドーピング装置 |
US8796124B2 (en) | 2011-10-25 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Doping method in 3D semiconductor device |
US8574995B2 (en) | 2011-11-10 | 2013-11-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain doping method in 3D devices |
GB201202128D0 (en) * | 2012-02-08 | 2012-03-21 | Univ Leeds | Novel material |
US9224644B2 (en) | 2012-12-26 | 2015-12-29 | Intermolecular, Inc. | Method to control depth profiles of dopants using a remote plasma source |
US9558946B2 (en) * | 2014-10-03 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods of forming FinFETs |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4912065A (en) * | 1987-05-28 | 1990-03-27 | Matsushita Electric Industrial Co., Ltd. | Plasma doping method |
KR930003857B1 (ko) * | 1987-08-05 | 1993-05-14 | 마쯔시다덴기산교 가부시기가이샤 | 플라즈마 도우핑방법 |
JPH04368763A (ja) | 1991-06-17 | 1992-12-21 | Matsushita Electric Ind Co Ltd | イオン照射処理装置 |
JPH0536620A (ja) | 1991-07-25 | 1993-02-12 | Canon Inc | 半導体表面処理方法及び装置 |
US5572038A (en) * | 1993-05-07 | 1996-11-05 | Varian Associates, Inc. | Charge monitor for high potential pulse current dose measurement apparatus and method |
US5711812A (en) * | 1995-06-06 | 1998-01-27 | Varian Associates, Inc. | Apparatus for obtaining dose uniformity in plasma doping (PLAD) ion implantation processes |
US5851906A (en) * | 1995-08-10 | 1998-12-22 | Matsushita Electric Industrial Co., Ltd. | Impurity doping method |
JP3340318B2 (ja) | 1995-08-10 | 2002-11-05 | 松下電器産業株式会社 | 不純物導入装置及び不純物導入方法 |
US7118996B1 (en) * | 1996-05-15 | 2006-10-10 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus and method for doping |
JPH1154451A (ja) * | 1997-08-07 | 1999-02-26 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
JP2000114198A (ja) | 1998-10-05 | 2000-04-21 | Matsushita Electric Ind Co Ltd | 表面処理方法および装置 |
US6383901B1 (en) * | 2001-01-25 | 2002-05-07 | Macronix International Co., Ltd. | Method for forming the ultra-shallow junction by using the arsenic plasma |
US6531367B2 (en) * | 2001-03-20 | 2003-03-11 | Macronix International Co., Ltd. | Method for forming ultra-shallow junction by boron plasma doping |
CN1509494A (zh) * | 2001-04-09 | 2004-06-30 | ���µ�����ҵ��ʽ���� | 表面处理方法和半导体装置的制造装置 |
US20020187614A1 (en) * | 2001-04-16 | 2002-12-12 | Downey Daniel F. | Methods for forming ultrashallow junctions with low sheet resistance |
US7135423B2 (en) * | 2002-05-09 | 2006-11-14 | Varian Semiconductor Equipment Associates, Inc | Methods for forming low resistivity, ultrashallow junctions with low damage |
JP4749713B2 (ja) * | 2002-06-26 | 2011-08-17 | セムエキップ インコーポレイテッド | 水素化ホウ素クラスターイオンの注入によるイオン注入方法及び半導体製造方法 |
JP4013674B2 (ja) | 2002-07-11 | 2007-11-28 | 松下電器産業株式会社 | プラズマドーピング方法及び装置 |
US7238597B2 (en) * | 2002-09-27 | 2007-07-03 | Brontek Delta Corporation | Boron ion delivery system |
FR2847383B1 (fr) * | 2002-11-14 | 2005-04-15 | St Microelectronics Sa | Procede de fabrication d'un transistor mos de longueur de grille reduite, et circuit integre comportant un tel transistor |
JP4544447B2 (ja) * | 2002-11-29 | 2010-09-15 | パナソニック株式会社 | プラズマドーピング方法 |
US20040147070A1 (en) * | 2003-01-24 | 2004-07-29 | National Chiao-Tung University | Ultra-shallow junction formation for nano MOS devices using amorphous-si capping layer |
TW200423185A (en) * | 2003-02-19 | 2004-11-01 | Matsushita Electric Ind Co Ltd | Method of introducing impurity |
JP2005005328A (ja) | 2003-06-09 | 2005-01-06 | Matsushita Electric Ind Co Ltd | 不純物導入方法、不純物導入装置およびこれを用いて形成された半導体装置 |
JP4619951B2 (ja) * | 2003-08-25 | 2011-01-26 | パナソニック株式会社 | 不純物導入層の形成方法 |
US20050045507A1 (en) * | 2003-08-29 | 2005-03-03 | Meyer Scott Edward | Storage box for HotWheelsR or MatchboxR die-cast model vehicles |
KR101076516B1 (ko) * | 2003-09-08 | 2011-10-24 | 파나소닉 주식회사 | 플라즈마 처리방법 및 장치 |
JP4303662B2 (ja) | 2003-09-08 | 2009-07-29 | パナソニック株式会社 | プラズマ処理方法 |
WO2006064772A1 (ja) * | 2004-12-13 | 2006-06-22 | Matsushita Electric Industrial Co., Ltd. | プラズマドーピング方法 |
CN101203933B (zh) * | 2005-03-15 | 2010-05-19 | 瓦里安半导体设备公司 | 等离子体离子植入中的轮廓调整 |
US7601404B2 (en) * | 2005-06-09 | 2009-10-13 | United Microelectronics Corp. | Method for switching decoupled plasma nitridation processes of different doses |
US7879701B2 (en) * | 2005-06-30 | 2011-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
-
2005
- 2005-12-12 WO PCT/JP2005/022799 patent/WO2006064772A1/ja active Application Filing
- 2005-12-12 SG SG200804532-0A patent/SG144152A1/en unknown
- 2005-12-12 JP JP2006548833A patent/JP5102495B2/ja not_active Expired - Fee Related
- 2005-12-12 DE DE602005025015T patent/DE602005025015D1/de active Active
- 2005-12-12 EP EP05814536A patent/EP1826814B8/de not_active Expired - Fee Related
- 2005-12-12 KR KR1020077013165A patent/KR101123788B1/ko not_active IP Right Cessation
- 2005-12-13 TW TW094144014A patent/TWI390610B/zh not_active IP Right Cessation
-
2006
- 2006-12-29 US US11/647,149 patent/US7407874B2/en not_active Expired - Fee Related
-
2007
- 2007-04-30 US US11/741,861 patent/US7348264B2/en not_active Expired - Fee Related
-
2008
- 2008-06-16 US US12/139,968 patent/US20080318399A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1826814A4 (de) | 2008-07-02 |
US7348264B2 (en) | 2008-03-25 |
TW200633025A (en) | 2006-09-16 |
KR101123788B1 (ko) | 2012-03-12 |
KR20070086048A (ko) | 2007-08-27 |
EP1826814A1 (de) | 2007-08-29 |
US20070190759A1 (en) | 2007-08-16 |
US7407874B2 (en) | 2008-08-05 |
EP1826814B1 (de) | 2010-11-24 |
WO2006064772A1 (ja) | 2006-06-22 |
TWI390610B (zh) | 2013-03-21 |
US20080318399A1 (en) | 2008-12-25 |
DE602005025015D1 (de) | 2011-01-05 |
EP1826814B8 (de) | 2011-04-13 |
JPWO2006064772A1 (ja) | 2008-06-12 |
US20070166846A1 (en) | 2007-07-19 |
JP5102495B2 (ja) | 2012-12-19 |
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