TWI481581B - 陶瓷碳複合材及其製造方法與被覆陶瓷之陶瓷碳複合材及其製造方法 - Google Patents
陶瓷碳複合材及其製造方法與被覆陶瓷之陶瓷碳複合材及其製造方法 Download PDFInfo
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Description
本發明係關於一種屬於石墨與陶瓷之複合材的陶瓷碳複合材及其製造方法與被覆陶瓷之陶瓷碳複合材及其製造方法。
以往,碳材係低比重、且耐熱性、耐蝕性、滑動性、導電性、導熱性、加工性佳,而利用在半導體、冶金、機械、電氣、核能等廣泛之領域。
然而,一般而言,碳材係具有耐氧化性及強度差之問題。為了解決該問題,檢討與陶瓷等其他材料之複合化。
就將碳材與陶瓷材複合化之例而言,係將以氣相反應或熔融反應將SiC或TaC被覆在石墨基材的SiC被覆石墨複合材予以利用為化學蒸鍍法之化合物半導體製造用的承接器(susceptor)。該等製品雖具有耐熱性與化學性穩定性,防止石墨粒子之發塵,但無助於強度提升,且製造成本亦高,故侷限在承接器等之用途。而且,在技術上難以3維且均勻地被覆在複雜形狀的石墨基材。
另一方面,開發有一種在高溫下使熔融矽含浸在多孔質碳並激發燃燒合成反應,將多孔質碳之氣孔內部予以SiC化之SiC/碳複合材(參照專利文獻1)。該複合材雖能以加工成比較簡單之螺栓或螺帽之類的3維形狀的多孔質碳材為基礎而形成為近似淨形(near net)品,但欠缺含浸材特有之緻密,且表面粗糙、成本亦高,目前並未被利用。
最近,開發有一種將平均粒徑10至100nm之SiC超微粉末與石墨粒子予以混合,並藉由電漿放電燒結而緻密化成高密度的C-SiC燒結體(參照專利文獻2)。該複合材係含有1至95重量%之SiC,相對密度為70至99.5%,彎曲強度係100至350MPa之高值。然而,其係為均勻地混合SiC粒子與碳粒子之複合構造,並非以陶瓷來分離碳粒子彼此之界面而形成之概念所成者。此外,陶瓷係限定在SiC。
在碳複合材中,係廣泛地利用將瀝青含浸在碳纖維之織物並進行燒結之C/C合成物、或含浸樹脂之複合材,雖其強度佳,但耐氧化性皆未改善,而在空氣中高溫下的使用受到限制。而且,表面粗糙、加工亦困難,製造需要花費長時間。
(專利文獻)
(專利文獻1)日本特開昭60-25569號公報
(專利文獻2)日本特開2004-339048號公報
本發明之目的在於提供一種比陶瓷輕量、且耐氧化性、耐發塵性、導熱性、導電性、強度、緻密性等之至少任一特性佳之陶瓷碳複合材及其製造方法與被覆陶瓷之陶瓷碳複合材及其製造方法。
本發明之陶瓷碳複合材的特徵係在石墨或包含石墨之碳粒子彼此間形成有陶瓷之界面層。
本發明之陶瓷碳複合材係為石墨或包含石墨之碳粒子、與陶瓷之複合材,因此比陶瓷材料輕量。而且,由於以覆蓋石墨或包含石墨之碳粒子之表面的方式形成陶瓷之界面層,因此耐氧化性、耐發塵性、導熱性、導電性、強度、緻密性等之至少任一特性皆比僅混合碳與陶瓷之複合材佳。
在本發明中,陶瓷之界面層較佳為在石墨或包含石墨之碳粒子間具有連續的3維網眼構造。由於陶瓷之界面層具有連續之3維網眼構造,因此在耐氧化性、耐發塵性、導熱性、導電性、強度、緻密性等方面,係可發揮更佳之特性。
在本發明中,陶瓷之界面層係可由例如AlN、Al2
O3
、SiC、Si3
N4
、B4
C、TaC、NbC、ZrC、ZnO、SiO2
及ZrO2
所構成之組群中選出的至少1種而形成者。
本發明之陶瓷之界面層的厚度係可設為例如100nm至10μm。
本發明之陶瓷碳複合材之製造方法係可製造前述本發明之陶瓷碳複合材的方法,其特徵具備有:製作在石墨或包含石墨之碳粒子的表面被覆有由陶瓷所構成之陶瓷層的陶瓷被覆粉末之步驟;及由陶瓷被覆粉末將成形體予以成形,並對該成形體進行燒結,以製作陶瓷碳複合材之步驟。
藉由對由陶瓷被覆粉末所構成之成形體進行燒結,陶瓷被覆粉末的表面之陶瓷彼此燒結,而在陶瓷碳複合材中形成陶瓷之界面層。
依據本發明之製造方法,可有效率地製造前述本發明之陶瓷碳複合材。
就將陶瓷層形成在碳粒子之表面的方法而言,可列舉氣相法、液相法、機械性混合法或組合前述方法之方法。
此外,就形成陶瓷被覆粉末之其他方法而言,可列舉藉由將碳粒子添加在陶瓷粒子之漿液中,而使陶瓷粒子附著在碳粒子之表面,以形成陶瓷層的方法。
本發明之被覆陶瓷之陶瓷碳複合材的特徵係在前述本發明之陶瓷碳複合材的表面之至少一部分上形成陶瓷被覆層。
就陶瓷被覆層而言,可列舉例如由AlN、Al2
O3
、MgO、SiC、Si3
N4
、B4
C、TaC、NbC、ZrC、ZnO、SiO2
及ZrO2
所構成之組群中選出的至少1種而形成者
在陶瓷碳複合材中之形成陶瓷之界面層的陶瓷材料、與形成陶瓷被覆層的陶瓷材料不同時,陶瓷被覆層之組成亦可隨著從內部往外部而變化。例如,亦可具有在接近陶瓷碳複合材之內部中,作成形成陶瓷之界面層的陶瓷材料較多的組成,且隨著往外部使形成陶瓷之界面層的陶瓷材料之成分變少的組成傾斜構造。
本發明之被覆陶瓷之陶瓷碳複合材之製造方法係可製造前述本發明之被覆陶瓷之陶瓷碳複合材的方法,其特徵係具備有:將燒結前之陶瓷碳複合材的成形體予以成形之步驟;在成形體之表面的至少一部分上,設置用以形成陶瓷被覆層的陶瓷粉末之層的步驟;及將形成有陶瓷粉末之層的陶瓷碳複合材之成形體予以一體地燒結的步驟。
在本發明之製造方法中,從陶瓷粉末之層形成陶瓷被覆層。形成陶瓷被覆層之陶瓷粉末的層亦可為積層有複數層之積層構造。在形成該積層構造時,陶瓷層之組成係能以隨著從內部往外部而變化之方式使各層之組成變化而積層。
此外,亦可使陶瓷碳複合材中之形成陶瓷之界面層的陶瓷材料的粉末,混合在形成陶瓷被覆層之陶瓷粉末中。亦即,就形成陶瓷被覆層之陶瓷粉末而言,亦可混合使用形成陶瓷層之界面層的陶瓷材料之粉末、及其他陶瓷材料。
在依據製造本發明之被覆陶瓷之陶瓷碳複合材之另一樣態的方法中,其特徵係具備有:製造陶瓷碳複合體之燒結體的步驟;及藉由在陶瓷碳複合體之燒結體的表面之至少一部分上,配置並接合陶瓷燒結板或單結晶板,而形成陶瓷被覆層之步驟。
在本製造方法中,係使用陶瓷燒結體或單結晶板,以形成陶瓷被覆層。藉由將該陶瓷燒結板或單結晶板與陶瓷碳複合材之燒結體接合,而將陶瓷被覆層形成在陶瓷碳複合材之表面上。
依據本發明,可作成比陶瓷輕量、且耐氧化性、耐發塵性、導熱性、導電性、強度、緻密性等之至少任一特性佳之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材及其製造方法。
依據本發明之製造方法,可有效率地製造前述本發明之陶瓷碳複合材或被覆陶瓷之陶瓷碳複合材。
以下,利用具體之實施形態說明本發明,惟本發明並非限定在以下之實施形態者。
第1圖係示意性顯示依據本發明之實施形態之陶瓷碳複合材的剖面圖。
如第1圖所示,陶瓷碳複合材1係在石墨或包含石墨之碳粒子2彼此之間配置陶瓷界面層3而形成者。陶瓷界面層3係在碳粒子2之間形成連續的3維網眼構造。構成陶瓷界面層3之陶瓷材料係由於耐氧化性、耐熱性、熱摩耗性、強度等佳,因此藉由使陶瓷界面層3形成連續之3維網眼構造,可提高陶瓷碳複合材1之該等特性。
而且,藉由控制碳粒子2之種類、形狀及尺寸、形成陶瓷界面層3之陶瓷材料的種類與陶瓷界面層之厚度、以及3維之連續性,即可提升陶瓷碳複合材1之耐氧化性、耐摩耗性、強度、容積密度等,且可將導電性、導熱性等特性控制成比所希望者高或低。
就構成陶瓷界面層3之陶瓷材料而言,係採用具有電氣絕緣性之AlN、Al2
O3
、Si3
N4
、SiO2
及ZrO2
等材料,形成以陶瓷界面層3完全地被覆碳粒子2之連續性3維網眼構造,藉此可將陶瓷碳複合材1作成為電絕緣體。此外,就形成陶瓷界面層3之陶瓷材料而言,係使用SiC或ZnO,將陶瓷界面層3之厚度作成為數100nm之薄狀態,藉此當施加有一定以上之電壓時,在陶瓷界面層3會產生穿隧電流或蕭特基電流,而亦可將顯現非線性電流-電壓特性之變阻器效應賦予在陶瓷碳複合材1。
第1圖所示之陶瓷碳複合材1係可藉由將由陶瓷被覆粉末所構成之成形體予以成形,並對該成形體進行燒結而製造者,而該陶瓷被覆粉末係將構成陶瓷界面層3之由陶瓷材料所構成之陶瓷層被覆在碳粒子2者。
第2圖係顯示陶瓷被覆粉末12的示意剖面圖。如第2圖所示,藉由在石墨或包含石墨之碳粒子10之表面被覆由陶瓷所構成之陶瓷層而構成。
就碳粒子10而言,只要是石墨或包含石墨者即無特別限定,但可使用例如人造石墨、天然石墨、中間相(mesophase)、玻璃狀碳等。該等的粒子形狀較佳為球形,但亦可為板狀或柱狀。碳粒子10之尺寸雖並無特別限定,但可列舉例如平均粒子徑1至30μm者。
就形成陶瓷層11之陶瓷材料而言,可列舉上述之氧化物、碳化物、氮化物等。陶瓷層11之厚度係可考慮對陶瓷被覆粉末12進行燒結而形成之陶瓷碳複合材中之陶瓷界面層的厚度而進行各種選擇。
此外,陶瓷層11亦可積層複數層而形成。例如,為了控制碳粒子10之熱應力、與碳粒子10之接合性、電絕緣性之確保、及其他功能,亦可積層不同之陶瓷而形成陶瓷層11。
就將陶瓷層11形成在碳粒子10之表面上的方法而言,如前所述,可列舉氣相法、液相法、機械性混合法或組合前述方法之方法。
就氣相法而言,可列舉藉由氣相反應使陶瓷沈積之化學氣相蒸鍍法(CVD)法、或藉由以碳粒子10之表面的碳作為反應源而使之與其他成分反應而形成陶瓷材料的轉化法(CVR法)等。
例如,藉由氣相法在碳粒子之表面形成陶瓷被膜時,在反應氣體之供給源上配置碳粒子層,在真空中或Ar氣體等惰性氣體的環境下進行加熱,藉此可利用CVD法或CVR法以例如100nm至10μm之範圍內的厚度在碳粒子之表面形成陶瓷層。
就液相法而言,可列舉:在陶瓷之前驅物物質(例如Al(OH)3
)之溶液中添加混合碳粒子,並使碳粒子乾燥,使前驅物物質附著在碳粒子之表面後,藉由對前驅物物質進行熱處理,將附著在表面之前驅物物質變換為預定之陶瓷材料的方法。
就藉由液相法在碳粒子之表面形成陶瓷之具體例而言,可列舉例如以下所述者。
就碳粒子而言,使用中石墨粉末(平均粒子徑5至25μm),在該中石墨粉末添加並混合少量之水後,滴下NH3
H2
O,將pH值調整為11左右,使中石墨粉末帶正電。接著,滴下Al(NO3
)3
溶液,並予以混合而成為漿液。再者,在滴下使Al(OH)3
全部沈澱之充分量的NH3
H2
O後,進行水洗並進行甲醇洗淨。然後,在110℃下乾燥半天,在1500℃氮氣環境下對所獲得之粉末進行2小時之熱處理。藉由該熱處理,會產生碳熱還原與氮反應,且在中石墨粉末之表面形成AlN之陶瓷層。
就機械性混合法而言,可列舉機械性混合並被覆陶瓷之微粒子與碳粒子之方法。就被覆之陶瓷粒子的尺寸而言,較佳為比碳粒子小之尺寸,可列舉例如200nm至1μm之平均粒子徑。藉由使陶瓷微粒子附著在碳粒子之表面,即可將陶瓷層形成在碳粒子之表面。
就藉由機械性混合法使陶瓷層附著在碳粒子表面之具體例而言,可列舉例如以下所述者。
例如,藉由添加少量之黏著劑並使用自轉/公轉混合器將平均粒子徑170nm之Al2
O3
粒子混合在平均粒子徑5至20μm之中石墨粒子,而形成均勻地被覆有氧化鋁粒子的中石墨粒子。
此外,就製作陶瓷被覆粉末之方法而言,亦可使用漿液法。漿液法係藉由將碳粒子添加在陶瓷粒子之漿液中,而使陶瓷粒子附著在碳粒子之表面,以形成陶瓷層之方法。為了使陶瓷粒子附著在碳粒子,亦可將黏著劑添加在陶瓷粒子之漿液中。
就漿液法之具體例而言,可列舉例如將碳粒子添加並混合在含有AIN之奈米粒子與黏著劑之漿液中後使之乾燥的方法。
可考慮陶瓷與碳粒子之反應性、陶瓷粒子之尺寸及形狀、陶瓷與碳粒子之熱膨脹率差等,並選擇氣相法、液相法、機械性混合法、漿液法中之適當手段,來形成陶瓷被覆粉末。此外,亦可考慮陶瓷與碳粒子之反應性或熱膨脹率差,將積層有不同陶瓷層之陶瓷層形成在碳粒子上。
由以上方式所得之陶瓷被覆粉末將成形體予以成形,並對該成形體進行燒結,藉此可製作陶瓷碳複合材。就燒結之方法而言,可採用常壓燒結法、熱壓燒結法、放電電漿燒結法等。其中,放電電漿燒結法係可在2分鐘至60分鐘之短時間進行高密度燒結,因此較為便利。此外,能以整體之0.5至20重量%之比例將依所需而選擇之適合於陶瓷之燒結助劑混合在陶瓷被覆粉末,以進行燒結。
第3圖係示顯示本發明之被覆陶瓷之陶瓷碳複合材的示意剖面圖。
如第3圖所示,本實施形態之被覆陶瓷之陶瓷碳複合材5係在陶瓷碳複合材1之表面上設置陶瓷被覆層4而構成者。在本實施形態中,雖在陶瓷碳複合材1之全表面上設置有陶瓷被覆層4,但在本發明中,陶瓷被覆層4並不一定要設置在全表面上,只要設置在陶瓷碳複合材1之至少一部分的表面上即可。例如,亦可僅設置在陶瓷碳複合材1之上表面、下表面及側表面之任一者。
陶瓷被覆層4係如上所述,可由氧化物、碳化物、氮化物等陶瓷所形成。形成陶瓷被覆層4之陶瓷材料亦可為與在陶瓷碳複合材1中形成陶瓷界面層3的陶瓷材料相同者,亦可為不同種類者。陶瓷被覆層4之組成為與陶瓷界面層3的組成不同時,如上所述亦可隨著從內部往外部使陶瓷被覆層4的組成變化。此時,可將陶瓷被覆層4之內部的組成作成為接近陶瓷界面層3的組成,且隨著從內部往外部而地逐漸作成為不同之組成。
就形成陶瓷被覆層4之方法而言,如上所述可列舉:將燒結前之陶瓷碳複合材1的成形體予以成形,在該成形體之表面的至少一部分上設置用以形成陶瓷被覆層4之陶瓷粉末層,在此狀態下一體地燒結陶瓷碳複合材1與陶瓷被覆層4的方法。
此時,如上所述亦可由複數個層形成陶瓷被覆層4,並使組成在陶瓷被覆層4之厚度方向變化。藉此,可提高陶瓷碳複合材1與陶瓷被覆層4之接著性,且可提升整體之強度等特性。
此外,就形成陶瓷被覆層4用之陶瓷粉末而言,亦可使用混合有形成陶瓷界面層3之陶瓷材料的粉末、與其他粉末者。藉此,可提高陶瓷界面層3與陶瓷被覆層4之接著性,且可提升強度等特性。
就形成陶瓷被覆層4之其他方法而言,可列舉:製造陶瓷碳複合材1之燒結體,且在該燒結體之表面的至少一部分上配置陶瓷燒結板或陶瓷單結晶板,且將該陶瓷燒結板或陶瓷單結晶板接合在陶瓷碳複合材1之表面上的方法。就接合之具體方法而言,可列舉熱壓法、放電電漿燒結法、壓接加熱法等。
此外,當然亦可將陶瓷碳複合材之燒結體作為基板,以通常之CVD法或反應濺鍍法被覆陶瓷。
以下,雖以具體之實施例為例更詳細地說明本發明,但本發明並非限定在以下之實施例。
針對由以下之各實施例及各比較例所得之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材,利用以下之評價方法來評價其特性。
針對燒結後之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材而言,以目視評價破裂或陶瓷表面之脫落及變形。
此外,測量容積密度,以算出氣孔率。
使用經燒結過之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材的小片,藉由熱重量試驗,以升溫速度10℃/分鐘進行升溫,並測量重量開始減少溫度,並設定為氧化開始溫度。
將經燒結過之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材切成4mm×2mm×20mm之大小,並藉由3點彎曲強度試驗來測量彎曲強度。將跨距(span)長度設為15mm,將十字頭速度(crosshead speed)設為0.5mm/分鐘。
製作直徑10mm、厚度2mm之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材,並以雷射閃光法來測量熱傳導率。
以直流四探針法測量經燒結過之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材的表面之電阻率。
以一定之荷重將經燒結過之陶瓷碳複合材及被覆陶瓷之陶瓷碳複合材擦在白紙上,以目視觀察白紙之變色,並用以下基準進行評價。
○:無白紙之變色
△:變為略淡灰色
×:容易變黑且有碳附著
在中石墨粉末(10g、粒子徑:5至20μm)添加水(5體積%)之混合漿液中,滴下NH3
H2
O並將pH值調整為約11後,添加混合Al(NO3
)3
溶液(20重量%),再滴下NH3
H2
O(28重量%)。NH3
H2
O係比Al(OH3
)全部沈澱時所假設之量多10倍。然後,進行水洗漿液並進行甲醇洗淨後,在110℃下乾燥,接著在氮氣環境下進行1500℃、2小時之碳熱還原與氮化處理。由X線粉末繞射及SEM觀察,Al(OH3
)係幾乎轉換為AlN,且大致均勻地被覆中石墨粒子之表面。由X線繞射之檢量線求出之AlN被覆量係約20體積%。當被覆量比20體積%多時,被膜會剝離,或可見到很多破裂。將該AlN被覆中石墨粉末填充在石墨模具,並利用放電電漿燒結法在1600℃、30MPa下燒結5分鐘。針對所得之陶瓷碳複合材,以上述方式評價特性。將評價試驗之結果顯示在表1。
與實施例1相同將中石墨粉末(5g)與羥乙基纖維素(Hydroxyethyl Cellulose)水溶液(5重量%、1.5g)置入塑膠容器,並利用自轉/公轉混合器(型號:AR-310,THINKY(股)製)進行機械混合30秒鐘。接著,添加Al2
O3
粉末(平均粒徑:100nm、等級TM-D、大明化學工業(股)、2.3g)並混合2分鐘後,使之乾燥。Al2
O3
粒子係如第4圖所示均勻地被覆在中石墨粉末表面。Al2
O3
量係為約20體積%。將該Al2
O3
被覆粉末填充在石墨模具,在溫度2000℃、壓力40MPa之條件下加壓20分鐘,並進行放電電漿燒結,將試驗結果顯示在表1。此外,第5圖係顯示經燒結過之Al2
O3
碳複合材之組織。
在將丙烯醯胺(Acrylamide)(8g)及N,N’亞甲基雙丙烯醯胺(1g)溶解在異丙醇(Isopropanol)(45g)的黏著劑溶液6.23g中,置入球狀天然石墨粉末(25g)並進行離心混合1分鐘,接著添加AlN粉末(平均粒徑:0.6μm、等級:H、德山(股)製、9.35g)並混合2分鐘而製作漿液。然後,使該漿液流入塑膠製模具,在90℃下乾燥12小時。在與實施例1相同之條件下對該成形體進行放電電漿燒結。將試驗結果顯示在表1。就球狀天然石墨粉末而言,係使用平均粒子徑20μm者。
將在實施例2製作之被覆Al2
O3
的中石墨粉末填充在石墨模具,並於被覆Al2
O3
的中石墨粉末上積層添加有燒結助劑之Y2
O3
(5重量%)之AlN粉末,並在與實施例2相同之條件下進行放電電漿燒結。可被覆緻密之AIN層(厚度1mm),不會產生破裂或剝離。此外,雖亦製作以AIN層被覆全表面之樣本,但並沒有產生破裂等。
以磨粉機充分地混合在實施例3使用之球狀天然石墨粉末(10g)與SiC微粉末(SERA-A06、平均粒徑:600nm、信濃電氣精練公司製、12g)後,填充在石墨模具,並藉由放電電漿燒結法在與實施例1相同之條件下進行燒結。將評價試驗之結果顯示在表1。
在沒有被覆陶瓷粒子之情形下,將在實施例3使用之球狀天然石墨粉末填充在石墨模具,並藉由放電電漿燒結法在與實施例1相同之條件下進行燒結。將評價試驗之結果顯示在表1。
以一般之磨粉機花費半天混合在實施例3使用之球狀天然石墨粉末(10g)與AlN粉末(平均粒徑:0.6μm:3.74g、德山公司製)後,填充在石墨模具,並且在與實施例1相同之條件下進行燒結。將評價試驗之結果顯示在表1。
在沒有被覆陶瓷粒子之情形下,將在實施例1使用之中石墨粉末填充在石墨模具,並藉由放電電漿燒結法在與實施例1相同之條件下進行燒結。該石墨粉末並未被燒結成固體。
由表1所示之結果得知,依據本發明之實施例1至3的陶瓷碳複合材及實施例4之被覆陶瓷之陶瓷碳複合材係比陶瓷輕量、且耐氧化性、耐發塵性、導熱性、導電性、強度、緻密性佳。此外,關於實施例之被覆陶瓷之陶瓷碳複合材的氧化開始溫度,在表1中係記載為「未能測量」,此乃顯示由於被陶瓷被覆層所塗覆,因此在測量溫度域中顯現氧化幾乎未進行。
1‧‧‧陶瓷碳複合材
2‧‧‧碳粒子
3‧‧‧陶瓷界面層
4‧‧‧陶瓷被覆層
5‧‧‧被覆陶瓷之陶瓷碳複合材
10‧‧‧碳粒子
11‧‧‧陶瓷層
12‧‧‧陶瓷被覆粉末
第1圖係顯示依據本發明之一實施形態之陶瓷碳複合材的示意剖面圖。
第2圖係顯示依據本發明之一實施形態之陶瓷被覆粉末的示意剖面圖。
第3圖係顯示依據本發明之一實施形態之被覆陶瓷之陶瓷碳複合材的示意剖面圖。
第4圖係顯示依據本發明之實施例之Al2
O3
被覆石墨粒子的掃描型電子顯微鏡照片。
第5圖係顯示依據本發明之實施例之陶瓷碳複合材之剖面的掃描型電子顯微鏡照片。
1...陶瓷碳複合材
2...碳粒子
3...陶瓷界面層
Claims (10)
- 一種陶瓷碳複合材,係在石墨或包含石墨之碳粒子彼此間形成有陶瓷之界面層,其中前述陶瓷之界面層係在石墨或包含石墨之碳粒子間具有連續的3維網眼構造,且前述陶瓷之界面層的厚度係為100nm至10μm。
- 如申請專利範圍第1項所述之陶瓷碳複合材,其中,前述陶瓷之界面層係由AlN、Al2 O3 、SiC、Si3 N4 、B4 C、TaC、NbC、ZrC、ZnO、SiO2 及ZrO2 所構成之組群中選出的至少1種而形成者。
- 一種陶瓷碳複合材之製造方法,係製造申請專利範圍第1項或第2項所述之陶瓷碳複合材之方法,係具備有:製作在石墨或包含石墨之碳粒子的表面被覆有由前述陶瓷所構成之陶瓷層的陶瓷被覆粉末之步驟;及由前述陶瓷被覆粉末將成形體予以成形,並對該成形體進行燒結,以製作陶瓷碳複合材之步驟。
- 如申請專利範圍第3項所述之陶瓷碳複合材之製造方法,其中,藉由氣相法、液相法、機械性混合法或組合前述方法之方法,將前述陶瓷層形成在前述碳粒子之表面。
- 如申請專利範圍第3項所述之陶瓷碳複合材之製造方法,其中,藉由將前述碳粒子添加在陶瓷粒子之漿液中,而使前述陶瓷粒子附著在前述碳粒子之表面,以形成前述陶 瓷層。
- 一種被覆陶瓷之陶瓷碳複合材,係在申請專利範圍第1項或第2項所述之陶瓷碳複合材的表面之至少一部分上形成陶瓷被覆層。
- 如申請專利範圍第6項所述之被覆陶瓷之陶瓷碳複合材,其中,前述陶瓷被覆層係由AlN、Al2 O3 、MgO、SiC、Si3 N4 、B4 C、TaC、NbC、ZrC、ZnO、SiO2 及ZrO2 所構成之組群中選出的至少1種而形成者。
- 如申請專利範圍第6項或第7項所述之被覆陶瓷之陶瓷碳複合材,其中,在前述陶瓷碳複合材中之形成陶瓷之界面層的陶瓷材料、與形成前述陶瓷被覆層的陶瓷材料不同時,前述陶瓷被覆層之組成係隨著從內部往外部而變化。
- 一種被覆陶瓷之陶瓷碳複合材之製造方法,係製造申請專利範圍第6項至第8項中任一項所述之被覆陶瓷之陶瓷碳複合材的方法,係具備有:將燒結前之陶瓷碳複合材的成形體予以成形之步驟;及在前述成形體之表面的至少一部分上,設置用以形成前述陶瓷被覆層的陶瓷粉末之層的步驟;及將形成有前述陶瓷粉末之層的陶瓷碳複合材之成形體予以一體地燒結的步驟。
- 一種被覆陶瓷之陶瓷碳複合材之製造方法,係製造申請專利範圍第6項至第8項中任一項所述之被覆陶瓷之陶 瓷碳複合材的方法,係具備有:製造陶瓷碳複合體之燒結體的步驟;及藉由在前述陶瓷碳複合體之燒結體的表面之至少一部分上,配置並接合陶瓷燒結板或單結晶板,而形成前述陶瓷被覆層之步驟。
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2010
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- 2010-09-01 WO PCT/JP2010/064872 patent/WO2011027757A1/ja active Application Filing
- 2010-09-01 CN CN201080039131.0A patent/CN102482164B/zh not_active Expired - Fee Related
- 2010-09-01 EP EP20100813706 patent/EP2474515A4/en not_active Withdrawn
- 2010-09-01 RU RU2012112955/03A patent/RU2012112955A/ru not_active Application Discontinuation
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EP2474515A4 (en) | 2013-03-13 |
CN102482164A (zh) | 2012-05-30 |
RU2012112955A (ru) | 2013-10-10 |
CN102482164B (zh) | 2014-06-18 |
TW201113235A (en) | 2011-04-16 |
US20120164441A1 (en) | 2012-06-28 |
JP5678332B2 (ja) | 2015-03-04 |
KR20120076341A (ko) | 2012-07-09 |
EP2474515A1 (en) | 2012-07-11 |
WO2011027757A1 (ja) | 2011-03-10 |
JP2011051867A (ja) | 2011-03-17 |
US9296660B2 (en) | 2016-03-29 |
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