JP5748564B2 - 炭化ケイ素−炭素複合材の製造方法 - Google Patents
炭化ケイ素−炭素複合材の製造方法 Download PDFInfo
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- JP5748564B2 JP5748564B2 JP2011118580A JP2011118580A JP5748564B2 JP 5748564 B2 JP5748564 B2 JP 5748564B2 JP 2011118580 A JP2011118580 A JP 2011118580A JP 2011118580 A JP2011118580 A JP 2011118580A JP 5748564 B2 JP5748564 B2 JP 5748564B2
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- silicon carbide
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Description
図1は、本実施形態に係る製造方法によって得られる炭化ケイ素−炭素複合材を示す略図的断面図である。まず、図1を参照しながら、本実施形態に係る製造方法によって得られる炭化ケイ素−炭素複合材の構成について説明する。
窒化ケイ素が表面に付着した炭素質材料2を含む成形体を作製する。
次に、成形体を焼成する。焼成方法としては、例えば、放電プラズマ焼結法などが挙げられる。
以下のようにして炭化ケイ素−炭素複合材1と実質的に同様の構成を有する炭化ケイ素−炭素複合材を作製した。
アルキメデス法により、かさ密度を測定した。具体的には、JIS A1509−3に基づき測定した。
上記の方法で測定したかさ密度と、同じサンプルの理論密度(気孔のない状態おける密度)との比により相対密度を計算した(JIS Z2500−3407を参照)。
3点曲げ強度試験により、曲げ強度を測定した。具体的には、JIS A1509−4に基づき測定した。
レーザーフラッシュ法により、熱伝導率を測定した。具体的には、JIS R1650−3に基づき測定した。
1750℃でパルス通電焼結したこと以外は、実施例1と同様にして、炭化ケイ素−黒鉛複合材を得た。得られた炭化ケイ素−黒鉛複合材のかさ密度、相対密度、曲げ強度及び熱伝導率を実施例1と同様にして測定した。結果を下記の表1に示す。実施例2で得られた炭化ケイ素−黒鉛複合材の走査型電子顕微鏡写真((a)表面(b)破断面)を図3に示す(倍率1000倍)。
1800℃でパルス通電焼結したこと以外は、実施例1と同様にして、炭化ケイ素−黒鉛複合材を得た。得られた炭化ケイ素−黒鉛複合材のかさ密度、相対密度、曲げ強度及び熱伝導率を実施例1と同様にして測定した。結果を下記の表1に示す。実施例3で得られた炭化ケイ素−黒鉛複合材の走査型電子顕微鏡写真((a)表面(b)破断面)を図4に示す(倍率1000倍)。
1900℃でパルス通電焼結したこと以外は、実施例1と同様にして、炭化ケイ素−黒鉛複合材を得た。得られた炭化ケイ素−黒鉛複合材のかさ密度、相対密度、曲げ強度及び熱伝導率を実施例1と同様にして測定した。結果を下記の表1に示す。実施例4で得られた炭化ケイ素−黒鉛複合材の走査型電子顕微鏡写真((a)表面(b)破断面)を図5に示す(倍率1000倍)。
黒鉛(10g)と、窒化ケイ素(5.96g)と焼結助剤としてのAl2O3(0.39g)及びY2O3(0.20g)とを混合した粉末と、有機モノマーとしてアクリルアミドを含んだ1−プロパノール(3.83g)とをゲルキャスティング法により混合したこと以外は、実施例4と同様にして、炭化ケイ素−黒鉛複合材を得た。混合物中の黒鉛とセラミックスとの体積比は80:20であった。
黒鉛(10g)と、炭化ケイ素(SiC 4.50g)と焼結助剤としてのAl2O3(0.30g)及びY2O3(0.15g)とを混合した粉末と、アクリルアミド(8g)及びN,N’−メチレンビスアクリルアミド(1g)をイソプロパノール(45g)に溶解したバインダー溶液(3.03g)とをゲルキャスティング法により混合したこと以外は、実施例4と同様にして、炭化ケイ素−黒鉛複合材を得た。混合物中の黒鉛とセラミックスとの体積比は75:25であった。
黒鉛(10g)と、炭化ケイ素(SiC 5.96g)と焼結助剤としてのAl2O3(0.39g)及びY2O3(0.20g)とを混合した粉末と、有機モノマーとしてアクリルアミドを含んだ1−プロパノール(3.24g)とをゲルキャスティング法により混合したこと以外は、実施例4と同様にして、炭化ケイ素−黒鉛複合材を得た。混合物中の黒鉛とセラミックスとの体積比は70:30であった。
黒鉛(10g)と、窒化アルミニウム(AlN 3.54g)と焼結助剤としてのY2O3(0.19g)とを混合した粉末と、アクリルアミド(8g)及びN,N’−メチレンビスアクリルアミド(1g)をイソプロパノール(45g)に溶解したバインダー溶液(2.49g)とをゲルキャスティング法により混合したこと以外は、実施例4と同様にして、炭化ケイ素−黒鉛複合材を得た。混合物中の黒鉛とセラミックスとの体積比は70:30であった。
2…炭素質材料
3…炭化ケイ素
Claims (4)
- 炭化ケイ素が複数の炭素質材料を覆っており、かつ前記複数の炭素質材料を接続している炭化ケイ素−炭素複合材の製造方法であって、
粒子状の窒化ケイ素と粒子状の炭素質材料を混合して成形することにより成形体を得る工程と、
前記成形体を焼成することにより、前記炭化ケイ素−炭素複合材を得る工程とを備え、
前記炭素質材料の粒子径が、1μm〜500μmの範囲内であり、
前記窒化ケイ素の粒子径が、前記炭素質材料の粒子径の1/100〜1/5の範囲内であり、
前記複数の炭素質材料を接続している前記炭化ケイ素が、前記成形体を焼成する際に、前記窒化ケイ素と前記炭素質材料が反応することにより形成された炭化ケイ素である、炭化ケイ素−炭素複合材の製造方法。 - 前記窒化ケイ素と前記炭素質材料とバインダーとを混合し、前記窒化ケイ素が表面に付着した前記炭素質材料を含む混合物を得、前記混合物を成形することにより前記成形体を得る請求項1に記載の炭化ケイ素−炭素複合材の製造方法。
- 前記窒化ケイ素と炭素質材料との体積比が5:95〜50:50である成形体を用いる請求項1または2に記載の炭化ケイ素−炭素複合材の製造方法。
- 前記成形体の焼成を1700℃以上で行う請求項1〜3のいずれか一項に記載の炭化ケイ素−炭素複合材の製造方法。
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JP2011118580A JP5748564B2 (ja) | 2011-05-27 | 2011-05-27 | 炭化ケイ素−炭素複合材の製造方法 |
CN201280025810.1A CN103582621B (zh) | 2011-05-27 | 2012-05-24 | 碳化硅-碳复合材料的制造方法 |
EP12794133.4A EP2716617A4 (en) | 2011-05-27 | 2012-05-24 | METHOD FOR PRODUCING A SILICON CARBIDE CARBON COMPOUND |
PCT/JP2012/063316 WO2012165291A1 (ja) | 2011-05-27 | 2012-05-24 | 炭化ケイ素-炭素複合材の製造方法 |
KR1020137031027A KR20140038426A (ko) | 2011-05-27 | 2012-05-24 | 탄화규소-탄소 복합재의 제조 방법 |
US14/119,194 US9045375B2 (en) | 2011-05-27 | 2012-05-24 | Method for producing silicon carbide-carbon composite |
TW101118673A TW201307246A (zh) | 2011-05-27 | 2012-05-25 | 碳化矽-碳複合材之製造方法 |
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