TWI445124B - A substrate stage, a substrate processing apparatus, and a substrate to be processed - Google Patents

A substrate stage, a substrate processing apparatus, and a substrate to be processed Download PDF

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Publication number
TWI445124B
TWI445124B TW098103675A TW98103675A TWI445124B TW I445124 B TWI445124 B TW I445124B TW 098103675 A TW098103675 A TW 098103675A TW 98103675 A TW98103675 A TW 98103675A TW I445124 B TWI445124 B TW I445124B
Authority
TW
Taiwan
Prior art keywords
substrate
mounting table
substrate mounting
power supply
convex portion
Prior art date
Application number
TW098103675A
Other languages
English (en)
Chinese (zh)
Other versions
TW201001612A (en
Inventor
Yasuharu Sasaki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201001612A publication Critical patent/TW201001612A/zh
Application granted granted Critical
Publication of TWI445124B publication Critical patent/TWI445124B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW098103675A 2008-02-06 2009-02-05 A substrate stage, a substrate processing apparatus, and a substrate to be processed TWI445124B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008026235A JP5222442B2 (ja) 2008-02-06 2008-02-06 基板載置台、基板処理装置及び被処理基板の温度制御方法

Publications (2)

Publication Number Publication Date
TW201001612A TW201001612A (en) 2010-01-01
TWI445124B true TWI445124B (zh) 2014-07-11

Family

ID=40404297

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098103675A TWI445124B (zh) 2008-02-06 2009-02-05 A substrate stage, a substrate processing apparatus, and a substrate to be processed

Country Status (6)

Country Link
US (1) US8696862B2 (enExample)
EP (1) EP2088616A3 (enExample)
JP (1) JP5222442B2 (enExample)
KR (1) KR101115659B1 (enExample)
CN (1) CN101504928B (enExample)
TW (1) TWI445124B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI809233B (zh) * 2018-12-17 2023-07-21 大陸商中微半導體設備（上海）股份有限公司 用於電漿處理設備的射頻電極組件及電漿處理設備
US11875970B2 (en) 2018-12-17 2024-01-16 Advanced Micro-Fabrication Equipment Inc. China Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus

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CN101866826B (zh) * 2010-04-29 2012-04-11 中微半导体设备(上海)有限公司 一种用于真空处理系统的流体传输装置
JP5101665B2 (ja) * 2010-06-30 2012-12-19 東京エレクトロン株式会社 基板載置台、基板処理装置および基板処理システム
TWI646869B (zh) * 2011-10-05 2019-01-01 美商應用材料股份有限公司 對稱電漿處理腔室
JP5993568B2 (ja) * 2011-11-09 2016-09-14 東京エレクトロン株式会社 基板載置システム、基板処理装置、静電チャック及び基板冷却方法
DE102012101923B4 (de) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens
JP5946365B2 (ja) * 2012-08-22 2016-07-06 株式会社アルバック 静電吸着装置、残留吸着除去方法
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
EP2965349A2 (en) * 2013-03-06 2016-01-13 Plasma-Therm, Llc Method and apparatus for plasma dicing a semi-conductor wafer
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
CN104465450B (zh) * 2013-09-22 2017-05-10 中微半导体设备(上海)有限公司 一种用于冷却静电吸盘的供气装置及供气方法
CN104752301B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种静电卡盘以及腔室
CN103792974B (zh) * 2014-01-22 2015-12-02 清华大学 一种可快速精细调节温度场空间分布的加热盘及控制方法
WO2015145663A1 (ja) * 2014-03-27 2015-10-01 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
CN103972013B (zh) 2014-05-14 2016-08-24 京东方科技集团股份有限公司 一种真空设备
JP6469985B2 (ja) * 2014-07-28 2019-02-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9613839B2 (en) * 2014-11-19 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Control of workpiece temperature via backside gas flow
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10515786B2 (en) * 2015-09-25 2019-12-24 Tokyo Electron Limited Mounting table and plasma processing apparatus
KR102684670B1 (ko) * 2016-01-19 2024-07-15 스미토모 오사카 세멘토 가부시키가이샤 정전 척 장치
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
DE102017200588A1 (de) * 2017-01-16 2018-07-19 Ers Electronic Gmbh Vorrichtung zum Temperieren eines Substrats und entsprechendes Herstellungsverfahren
CN110462812A (zh) * 2017-03-31 2019-11-15 朗姆研究公司 具有灵活的晶片温度控制的静电卡盘
JP7030557B2 (ja) * 2018-02-27 2022-03-07 日本特殊陶業株式会社 保持装置
JP7145625B2 (ja) * 2018-03-07 2022-10-03 東京エレクトロン株式会社 基板載置構造体およびプラズマ処理装置
CN110767568B (zh) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
JP2020043171A (ja) * 2018-09-07 2020-03-19 東京エレクトロン株式会社 温調方法
JP7209515B2 (ja) * 2018-11-27 2023-01-20 東京エレクトロン株式会社 基板保持機構および成膜装置
JP7186096B2 (ja) * 2019-01-09 2022-12-08 東京エレクトロン株式会社 熱板の冷却方法及び加熱処理装置
JP7254542B2 (ja) * 2019-02-01 2023-04-10 東京エレクトロン株式会社 載置台及び基板処理装置
JP7407529B2 (ja) * 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP6845286B2 (ja) 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
JP7394556B2 (ja) * 2019-08-09 2023-12-08 東京エレクトロン株式会社 載置台及び基板処理装置
CN114514336B (zh) * 2019-09-27 2024-03-26 慧理示先进技术公司 用于闪烁体沉积的基板固定装置、包括其的基板沉积装置以及使用其的闪烁体沉积方法
JP7402037B2 (ja) * 2019-12-23 2023-12-20 日本特殊陶業株式会社 静電チャック
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
CN113130279B (zh) * 2019-12-30 2023-09-29 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
JP7442347B2 (ja) * 2020-03-06 2024-03-04 東京エレクトロン株式会社 基板処理装置及び基板処理方法
WO2021240945A1 (ja) * 2020-05-25 2021-12-02 日本碍子株式会社 静電チャック
JP7623083B2 (ja) * 2021-02-16 2025-01-28 東京エレクトロン株式会社 基板支持部及びプラズマ処理装置
CN115096077A (zh) * 2022-07-21 2022-09-23 江西和美陶瓷有限公司 一种辊道窑的急冷设备

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
TWI809233B (zh) * 2018-12-17 2023-07-21 大陸商中微半導體設備（上海）股份有限公司 用於電漿處理設備的射頻電極組件及電漿處理設備
US11875970B2 (en) 2018-12-17 2024-01-16 Advanced Micro-Fabrication Equipment Inc. China Radio frequency electrode assembly for plasma processing apparatus, and plasma processing apparatus

Also Published As

Publication number Publication date
KR101115659B1 (ko) 2012-03-14
CN101504928A (zh) 2009-08-12
JP2009188162A (ja) 2009-08-20
KR20090086171A (ko) 2009-08-11
CN101504928B (zh) 2011-08-03
TW201001612A (en) 2010-01-01
US8696862B2 (en) 2014-04-15
JP5222442B2 (ja) 2013-06-26
US20090194264A1 (en) 2009-08-06
EP2088616A3 (en) 2013-01-02
EP2088616A2 (en) 2009-08-12

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