KR101115659B1 - 기판 탑재대, 기판 처리 장치 및 피처리 기판의 온도 제어 방법 - Google Patents

기판 탑재대, 기판 처리 장치 및 피처리 기판의 온도 제어 방법 Download PDF

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Publication number
KR101115659B1
KR101115659B1 KR1020090009726A KR20090009726A KR101115659B1 KR 101115659 B1 KR101115659 B1 KR 101115659B1 KR 1020090009726 A KR1020090009726 A KR 1020090009726A KR 20090009726 A KR20090009726 A KR 20090009726A KR 101115659 B1 KR101115659 B1 KR 101115659B1
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South Korea
Prior art keywords
substrate
mounting table
cooling gas
convex portion
board
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Korean (ko)
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KR20090086171A (ko
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야스하루 사사키
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020090009726A 2008-02-06 2009-02-06 기판 탑재대, 기판 처리 장치 및 피처리 기판의 온도 제어 방법 Expired - Fee Related KR101115659B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008026235A JP5222442B2 (ja) 2008-02-06 2008-02-06 基板載置台、基板処理装置及び被処理基板の温度制御方法
JPJP-P-2008-026235 2008-02-06

Publications (2)

Publication Number Publication Date
KR20090086171A KR20090086171A (ko) 2009-08-11
KR101115659B1 true KR101115659B1 (ko) 2012-03-14

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KR1020090009726A Expired - Fee Related KR101115659B1 (ko) 2008-02-06 2009-02-06 기판 탑재대, 기판 처리 장치 및 피처리 기판의 온도 제어 방법

Country Status (6)

Country Link
US (1) US8696862B2 (enExample)
EP (1) EP2088616A3 (enExample)
JP (1) JP5222442B2 (enExample)
KR (1) KR101115659B1 (enExample)
CN (1) CN101504928B (enExample)
TW (1) TWI445124B (enExample)

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CN101866826B (zh) * 2010-04-29 2012-04-11 中微半导体设备(上海)有限公司 一种用于真空处理系统的流体传输装置
JP5101665B2 (ja) * 2010-06-30 2012-12-19 東京エレクトロン株式会社 基板載置台、基板処理装置および基板処理システム
TW201325326A (zh) 2011-10-05 2013-06-16 Applied Materials Inc 電漿處理設備及其基板支撐組件
JP5993568B2 (ja) * 2011-11-09 2016-09-14 東京エレクトロン株式会社 基板載置システム、基板処理装置、静電チャック及び基板冷却方法
DE102012101923B4 (de) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substratträgeranordnung, Beschichtungsanlage mit Substratträgeranordnung und Verfahren zur Durchführung eines Beschichtungsverfahrens
JP5946365B2 (ja) * 2012-08-22 2016-07-06 株式会社アルバック 静電吸着装置、残留吸着除去方法
JP6010433B2 (ja) * 2012-11-15 2016-10-19 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6388886B2 (ja) * 2013-03-06 2018-09-12 プラズマ − サーム、エルエルシー 半導体ウエハをプラズマ・ダイシングするための方法
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
CN104465450B (zh) * 2013-09-22 2017-05-10 中微半导体设备(上海)有限公司 一种用于冷却静电吸盘的供气装置及供气方法
CN104752301B (zh) * 2013-12-31 2018-05-25 北京北方华创微电子装备有限公司 一种静电卡盘以及腔室
CN103792974B (zh) * 2014-01-22 2015-12-02 清华大学 一种可快速精细调节温度场空间分布的加热盘及控制方法
WO2015145663A1 (ja) 2014-03-27 2015-10-01 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
CN103972013B (zh) 2014-05-14 2016-08-24 京东方科技集团股份有限公司 一种真空设备
JP6469985B2 (ja) * 2014-07-28 2019-02-13 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9613839B2 (en) * 2014-11-19 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Control of workpiece temperature via backside gas flow
KR101670457B1 (ko) * 2014-11-28 2016-10-31 세메스 주식회사 지지 유닛 및 이를 포함하는 기판 처리 장치
JP2016136554A (ja) * 2015-01-23 2016-07-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10515786B2 (en) * 2015-09-25 2019-12-24 Tokyo Electron Limited Mounting table and plasma processing apparatus
US10923381B2 (en) * 2016-01-19 2021-02-16 Sumitomo Osaka Cement Co., Ltd. Electrostatic chuck device
JP6847610B2 (ja) * 2016-09-14 2021-03-24 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
DE102017200588A1 (de) * 2017-01-16 2018-07-19 Ers Electronic Gmbh Vorrichtung zum Temperieren eines Substrats und entsprechendes Herstellungsverfahren
KR102529412B1 (ko) * 2017-03-31 2023-05-04 램 리써치 코포레이션 플렉서블 웨이퍼 온도 제어부를 갖는 정전 척 (electrostatic chuck)
JP7030557B2 (ja) * 2018-02-27 2022-03-07 日本特殊陶業株式会社 保持装置
JP7145625B2 (ja) * 2018-03-07 2022-10-03 東京エレクトロン株式会社 基板載置構造体およびプラズマ処理装置
CN110767568B (zh) * 2018-07-26 2022-05-27 北京北方华创微电子装备有限公司 压力调节组件、下电极装置、工艺腔室和半导体处理设备
JP2020043171A (ja) * 2018-09-07 2020-03-19 東京エレクトロン株式会社 温調方法
JP7209515B2 (ja) * 2018-11-27 2023-01-20 東京エレクトロン株式会社 基板保持機構および成膜装置
CN111326390B (zh) * 2018-12-17 2023-09-12 中微半导体设备(上海)股份有限公司 射频电极组件和等离子体处理设备
KR102244438B1 (ko) * 2018-12-17 2021-04-27 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드. 차이나 플라즈마 처리 장치에 사용되는 rf 전극 조립품 및 플라즈마 처리 장치
JP7186096B2 (ja) * 2019-01-09 2022-12-08 東京エレクトロン株式会社 熱板の冷却方法及び加熱処理装置
JP7254542B2 (ja) * 2019-02-01 2023-04-10 東京エレクトロン株式会社 載置台及び基板処理装置
JP7407529B2 (ja) * 2019-07-10 2024-01-04 東京エレクトロン株式会社 基板載置台、基板処理装置及び温度制御方法
JP6845286B2 (ja) * 2019-08-05 2021-03-17 日本発條株式会社 ステージ、ステージを備える成膜装置または膜加工装置、および基板の温度制御方法
JP7394556B2 (ja) * 2019-08-09 2023-12-08 東京エレクトロン株式会社 載置台及び基板処理装置
WO2021060843A1 (ko) * 2019-09-27 2021-04-01 주식회사 뷰웍스 신틸레이터 증착을 위한 기판 고정 장치, 이를 포함하는 기판 증착 장치 및 이를 이용한 신틸레이터의 증착 방법
JP7402037B2 (ja) * 2019-12-23 2023-12-20 日本特殊陶業株式会社 静電チャック
CN113053715B (zh) * 2019-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
CN113130279B (zh) * 2019-12-30 2023-09-29 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置及其工作方法
JP7442347B2 (ja) * 2020-03-06 2024-03-04 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN115552586A (zh) * 2020-05-25 2022-12-30 日本碍子株式会社 静电卡盘
JP7623083B2 (ja) * 2021-02-16 2025-01-28 東京エレクトロン株式会社 基板支持部及びプラズマ処理装置
CN115096077A (zh) * 2022-07-21 2022-09-23 江西和美陶瓷有限公司 一种辊道窑的急冷设备

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JP2004172202A (ja) * 2002-11-18 2004-06-17 Anelva Corp 静電チャック装置
JP2005079415A (ja) * 2003-09-02 2005-03-24 Hitachi High-Technologies Corp プラズマ処理装置
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JP2004172202A (ja) * 2002-11-18 2004-06-17 Anelva Corp 静電チャック装置
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Also Published As

Publication number Publication date
JP5222442B2 (ja) 2013-06-26
EP2088616A3 (en) 2013-01-02
CN101504928A (zh) 2009-08-12
TW201001612A (en) 2010-01-01
US20090194264A1 (en) 2009-08-06
JP2009188162A (ja) 2009-08-20
TWI445124B (zh) 2014-07-11
KR20090086171A (ko) 2009-08-11
CN101504928B (zh) 2011-08-03
EP2088616A2 (en) 2009-08-12
US8696862B2 (en) 2014-04-15

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