TWI428436B - 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法 - Google Patents

拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法 Download PDF

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Publication number
TWI428436B
TWI428436B TW097136354A TW97136354A TWI428436B TW I428436 B TWI428436 B TW I428436B TW 097136354 A TW097136354 A TW 097136354A TW 97136354 A TW97136354 A TW 97136354A TW I428436 B TWI428436 B TW I428436B
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Taiwan
Prior art keywords
polishing composition
ppm
polishing
substrate
cerium oxide
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TW097136354A
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English (en)
Chinese (zh)
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TW200918658A (en
Inventor
戴薩 傑佛瑞
安卓 希利藍
葛倫拜 史帝芬
懷特 丹妮拉
沃德 威廉
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卡博特微電子公司
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW097136354A 2007-09-21 2008-09-22 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法 TWI428436B (zh)

Applications Claiming Priority (1)

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US97434007P 2007-09-21 2007-09-21

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TW200918658A TW200918658A (en) 2009-05-01
TWI428436B true TWI428436B (zh) 2014-03-01

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TW097136354A TWI428436B (zh) 2007-09-21 2008-09-22 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法

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Country Link
US (1) US7994057B2 (enExample)
EP (1) EP2197972B1 (enExample)
JP (1) JP5519507B2 (enExample)
KR (1) KR101232585B1 (enExample)
CN (1) CN101802125B (enExample)
IL (1) IL203477A (enExample)
MY (1) MY147729A (enExample)
TW (1) TWI428436B (enExample)
WO (1) WO2009042072A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI760494B (zh) * 2017-06-16 2022-04-11 美商羅門哈斯電子材料Ｃｍｐ控股公司 用於淺溝槽隔離的水性二氧化矽漿料組合物及其使用方法

Also Published As

Publication number Publication date
IL203477A (en) 2013-03-24
CN101802125B (zh) 2013-11-06
US7994057B2 (en) 2011-08-09
CN101802125A (zh) 2010-08-11
JP5519507B2 (ja) 2014-06-11
MY147729A (en) 2013-01-15
WO2009042072A3 (en) 2009-06-18
US20090081871A1 (en) 2009-03-26
WO2009042072A2 (en) 2009-04-02
KR101232585B1 (ko) 2013-02-12
EP2197972B1 (en) 2020-04-01
EP2197972A2 (en) 2010-06-23
JP2010541203A (ja) 2010-12-24
KR20100074207A (ko) 2010-07-01
EP2197972A4 (en) 2011-06-01
TW200918658A (en) 2009-05-01

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