IL203477A - Polishing composition and method utilizing abrasive particles treated with an aminosilane - Google Patents

Polishing composition and method utilizing abrasive particles treated with an aminosilane

Info

Publication number
IL203477A
IL203477A IL203477A IL20347710A IL203477A IL 203477 A IL203477 A IL 203477A IL 203477 A IL203477 A IL 203477A IL 20347710 A IL20347710 A IL 20347710A IL 203477 A IL203477 A IL 203477A
Authority
IL
Israel
Prior art keywords
polishing composition
ppm
polishing
substrate
acid
Prior art date
Application number
IL203477A
Other languages
English (en)
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of IL203477A publication Critical patent/IL203477A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06Planarisation of inorganic insulating materials
    • H10P95/062Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
IL203477A 2007-09-21 2010-01-20 Polishing composition and method utilizing abrasive particles treated with an aminosilane IL203477A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97434007P 2007-09-21 2007-09-21
PCT/US2008/010896 WO2009042072A2 (en) 2007-09-21 2008-09-19 Polishing composition and method utilizing abrasive particles treated with an aminosilane

Publications (1)

Publication Number Publication Date
IL203477A true IL203477A (en) 2013-03-24

Family

ID=40472131

Family Applications (1)

Application Number Title Priority Date Filing Date
IL203477A IL203477A (en) 2007-09-21 2010-01-20 Polishing composition and method utilizing abrasive particles treated with an aminosilane

Country Status (9)

Country Link
US (1) US7994057B2 (enExample)
EP (1) EP2197972B1 (enExample)
JP (1) JP5519507B2 (enExample)
KR (1) KR101232585B1 (enExample)
CN (1) CN101802125B (enExample)
IL (1) IL203477A (enExample)
MY (1) MY147729A (enExample)
TW (1) TWI428436B (enExample)
WO (1) WO2009042072A2 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG184772A1 (en) * 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
JP5209284B2 (ja) * 2007-11-28 2013-06-12 日本ミクロコーティング株式会社 研磨シートおよび研磨シートの製造方法
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
JP5843613B2 (ja) 2009-01-20 2016-01-13 キャボット コーポレイションCabot Corporation シラン変性金属酸化物を含む組成物
JP5601922B2 (ja) * 2010-07-29 2014-10-08 富士フイルム株式会社 研磨液及び研磨方法
JP5925454B2 (ja) 2010-12-16 2016-05-25 花王株式会社 磁気ディスク基板用研磨液組成物
JP5968417B2 (ja) * 2011-03-25 2016-08-10 アクゾ ノーベル ケミカルズ インターナショナル ベスローテン フエンノートシャップAkzo Nobel Chemicals International B.V. アルキド樹脂系塗料組成物
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
CN104395425A (zh) * 2012-06-11 2015-03-04 嘉柏微电子材料股份公司 用于抛光钼的组合物和方法
US8778211B2 (en) * 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
KR20160057397A (ko) * 2013-09-20 2016-05-23 가부시키가이샤 후지미인코퍼레이티드 연마용 조성물
CN104745083B (zh) * 2013-12-25 2018-09-14 安集微电子(上海)有限公司 一种化学机械抛光液以及抛光方法
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303188B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9309442B2 (en) * 2014-03-21 2016-04-12 Cabot Microelectronics Corporation Composition for tungsten buffing
US9127187B1 (en) * 2014-03-24 2015-09-08 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9303190B2 (en) 2014-03-24 2016-04-05 Cabot Microelectronics Corporation Mixed abrasive tungsten CMP composition
US9583359B2 (en) * 2014-04-04 2017-02-28 Fujifilm Planar Solutions, LLC Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films
TWI561620B (en) * 2014-06-20 2016-12-11 Cabot Microelectronics Corp Cmp slurry compositions and methods for aluminum polishing
TWI564380B (zh) 2014-06-25 2017-01-01 卡博特微電子公司 銅障壁層化學機械拋光組合物
EP3161098B1 (en) * 2014-06-25 2022-10-26 CMC Materials, Inc. Tungsten chemical-mechanical polishing composition
KR102775584B1 (ko) * 2014-06-25 2025-03-06 씨엠씨 머티리얼즈 엘엘씨 콜로이드성 실리카 화학적-기계적 연마 조성물
CN105802510A (zh) * 2014-12-29 2016-07-27 安集微电子(上海)有限公司 一种化学机械抛光液及其应用
CN105802508B (zh) * 2014-12-29 2020-03-13 安集微电子(上海)有限公司 一种氮唑类化合物在提高化学机械抛光液稳定性中的应用
CN107533967A (zh) * 2015-03-30 2018-01-02 福吉米株式会社 研磨用组合物
US9597768B1 (en) * 2015-09-09 2017-03-21 Cabot Microelectronics Corporation Selective nitride slurries with improved stability and improved polishing characteristics
US9631122B1 (en) * 2015-10-28 2017-04-25 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant
US9771496B2 (en) 2015-10-28 2017-09-26 Cabot Microelectronics Corporation Tungsten-processing slurry with cationic surfactant and cyclodextrin
KR102545804B1 (ko) * 2015-12-04 2023-06-20 솔브레인 주식회사 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법
TWI738743B (zh) 2016-03-23 2021-09-11 美商道康寧公司 金屬-聚有機矽氧烷
US20190112196A1 (en) * 2016-03-30 2019-04-18 Fujimi Incorporated Cation-modified silica raw material dispersion
TWI642810B (zh) * 2016-06-07 2018-12-01 美商卡博特微電子公司 用於處理鎳基板表面之化學機械加工漿料及方法
US9783702B1 (en) * 2016-10-19 2017-10-10 Rohm And Haas Electronic Materials Cmp Holdings Inc. Aqueous compositions of low abrasive silica particles
US10294399B2 (en) * 2017-01-05 2019-05-21 Cabot Microelectronics Corporation Composition and method for polishing silicon carbide
US10221336B2 (en) * 2017-06-16 2019-03-05 rohm and Hass Electronic Materials CMP Holdings, Inc. Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them
CN111094481B (zh) 2017-09-15 2026-04-28 Cmc材料有限责任公司 用于钨化学机械抛光的组合物
US10508221B2 (en) * 2017-09-28 2019-12-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them
US10711158B2 (en) * 2017-09-28 2020-07-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10428241B2 (en) 2017-10-05 2019-10-01 Fujifilm Electronic Materials U.S.A., Inc. Polishing compositions containing charged abrasive
US20190185713A1 (en) * 2017-12-14 2019-06-20 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Cmp slurry compositions containing silica with trimethylsulfoxonium cations
JP7028120B2 (ja) * 2018-09-20 2022-03-02 Jsr株式会社 化学機械研磨用水系分散体及びその製造方法、並びに化学機械研磨方法
US12227673B2 (en) * 2018-12-04 2025-02-18 Cmc Materials Llc Composition and method for silicon nitride CMP
US10968366B2 (en) 2018-12-04 2021-04-06 Cmc Materials, Inc. Composition and method for metal CMP
US10676647B1 (en) 2018-12-31 2020-06-09 Cabot Microelectronics Corporation Composition for tungsten CMP
US10781343B2 (en) * 2019-01-24 2020-09-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Acid polishing composition and method of polishing a substrate having enhanced defect inhibition
JP7234008B2 (ja) * 2019-03-29 2023-03-07 株式会社フジミインコーポレーテッド 研磨用組成物
JP7285113B2 (ja) * 2019-03-29 2023-06-01 株式会社フジミインコーポレーテッド 研磨用組成物
JP7670722B2 (ja) 2020-01-07 2025-04-30 シーエムシー マテリアルズ リミティド ライアビリティ カンパニー 誘導体化ポリアミノ酸
US20230094224A1 (en) * 2020-01-16 2023-03-30 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
KR20210095465A (ko) * 2020-01-23 2021-08-02 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2021242755A1 (en) * 2020-05-29 2021-12-02 Versum Materials Us, Llc Low dishing oxide cmp polishing compositions for shallow trench isolation applications and methods of making thereof
KR102678848B1 (ko) * 2020-10-14 2024-06-26 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
WO2022170015A1 (en) * 2021-02-04 2022-08-11 Cmc Materials, Inc. Silicon carbonitride polishing composition and method
CN117529510A (zh) 2021-05-20 2024-02-06 弗萨姆材料美国有限责任公司 基于咪唑鎓的聚(离子液体)及其用途
KR102638622B1 (ko) 2021-07-22 2024-02-19 에스케이엔펄스 주식회사 반도체 공정용 연마 조성물 및 연마 조성물을 적용한 반도체 소자의 제조 방법
KR102782549B1 (ko) * 2021-08-23 2025-03-14 삼성에스디아이 주식회사 텅스텐 패턴 웨이퍼 연마용 cmp 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼의 연마 방법
US12497540B2 (en) 2021-09-30 2025-12-16 Fujimi Incorporated Polishing composition and polishing method using the same
TW202334371A (zh) 2021-09-30 2023-09-01 日商福吉米股份有限公司 拋光組成物及使用彼之拋光方法
KR102771385B1 (ko) * 2021-12-23 2025-02-26 주식회사 케이씨텍 연마 슬러리 조성물
US20260015523A1 (en) * 2024-07-12 2026-01-15 Entegris, Inc. Cmp composition including aminosilane modified silica coated ceria particles
WO2026075866A1 (en) * 2024-10-01 2026-04-09 Entegris, Inc. Chemical-mechanical polishing composition containing modified silica abrasives

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
EP0449263B1 (en) 1990-03-28 1996-06-12 Japan Synthetic Rubber Co., Ltd. Polysiloxane-composite polymer particles
US5174813A (en) 1991-11-07 1992-12-29 Dow Corning Corporation Polish containing derivatized amine functional organosilicon compounds
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5428107A (en) 1993-10-29 1995-06-27 Rohm And Haas Company Silane-modified floor finish vehicles
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
JP3303544B2 (ja) 1994-07-27 2002-07-22 ソニー株式会社 半導体装置の製造方法および配線層表面研磨用のスラリーおよび配線層表面研磨用のスラリーの製造方法
US5527423A (en) 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5645736A (en) 1995-12-29 1997-07-08 Symbios Logic Inc. Method for polishing a wafer
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6602439B1 (en) 1997-02-24 2003-08-05 Superior Micropowders, Llc Chemical-mechanical planarization slurries and powders and methods for using same
US6126532A (en) 1997-04-18 2000-10-03 Cabot Corporation Polishing pads for a semiconductor substrate
ATE227194T1 (de) 1997-04-18 2002-11-15 Cabot Microelectronics Corp Polierkissen fur einen halbleitersubstrat
US5770103A (en) 1997-07-08 1998-06-23 Rodel, Inc. Composition and method for polishing a composite comprising titanium
US6083419A (en) 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US6117000A (en) 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6372648B1 (en) 1998-11-16 2002-04-16 Texas Instruments Incorporated Integrated circuit planarization method
IL147039A0 (en) 1999-07-07 2002-08-14 Cabot Microelectronics Corp Cmp composition containing silane modified abrasive particles
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Jsr株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
US6646348B1 (en) 2000-07-05 2003-11-11 Cabot Microelectronics Corporation Silane containing polishing composition for CMP
KR100512134B1 (ko) 2001-02-20 2005-09-02 히다치 가세고교 가부시끼가이샤 연마제 및 기판의 연마방법
JP4428495B2 (ja) * 2001-03-29 2010-03-10 電気化学工業株式会社 研磨剤及び研磨剤スラリー
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
SE0102930D0 (sv) 2001-09-04 2001-09-04 Ericsson Telefon Ab L M Antenna system and net drift verification
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
TW539741B (en) 2002-04-26 2003-07-01 Everlight Chem Ind Corp Method for manufacturing cerium dioxide powder
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
DE10320779A1 (de) * 2003-05-09 2004-11-18 Degussa Ag Korrosionsschutz auf Metallen
DE102004004147A1 (de) 2004-01-28 2005-08-18 Degussa Ag Oberflächenmodifizierte, mit Siliziumdioxid umhüllte Metalloid/Metalloxide
JP4954462B2 (ja) 2004-10-19 2012-06-13 株式会社フジミインコーポレーテッド 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法
US7504044B2 (en) * 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
JP2006147993A (ja) 2004-11-24 2006-06-08 Hitachi Chem Co Ltd Cmp用研磨液及び研磨方法
JP2006176804A (ja) * 2004-12-21 2006-07-06 Fuji Electric Holdings Co Ltd ポーラスアルミナの製造方法
US7732393B2 (en) 2006-03-20 2010-06-08 Cabot Microelectronics Corporation Oxidation-stabilized CMP compositions and methods
JP2007273910A (ja) * 2006-03-31 2007-10-18 Fujifilm Corp 研磨用組成液
JP2008288398A (ja) * 2007-05-18 2008-11-27 Nippon Chem Ind Co Ltd 半導体ウェハーの研磨用組成物、その製造方法、及び研磨加工方法

Also Published As

Publication number Publication date
EP2197972A2 (en) 2010-06-23
CN101802125A (zh) 2010-08-11
WO2009042072A3 (en) 2009-06-18
KR101232585B1 (ko) 2013-02-12
TWI428436B (zh) 2014-03-01
EP2197972B1 (en) 2020-04-01
MY147729A (en) 2013-01-15
US20090081871A1 (en) 2009-03-26
US7994057B2 (en) 2011-08-09
CN101802125B (zh) 2013-11-06
EP2197972A4 (en) 2011-06-01
TW200918658A (en) 2009-05-01
JP5519507B2 (ja) 2014-06-11
JP2010541203A (ja) 2010-12-24
WO2009042072A2 (en) 2009-04-02
KR20100074207A (ko) 2010-07-01

Similar Documents

Publication Publication Date Title
US7994057B2 (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
US11034862B2 (en) Polishing composition and method utilizing abrasive particles treated with an aminosilane
IL195698A (en) Compositions and methods for polishing silicon nitride materials
CN104582899B (zh) 研磨剂、研磨剂套剂及基体的研磨方法
CN106415796B (zh) 混合研磨剂型的钨化学机械抛光组合物
CN102159662B (zh) 用于低k电介质的阻挡物浆料
IL182797A (en) Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
IL195699A (en) Oxidative silicon polishing method used in colloidal silica
IL192527A (en) Composition and method to polish silicon nitride
EP3368624A1 (en) Tungsten-processing slurry with cationic surfactant
KR20220034854A (ko) 벌크 텅스텐 슬러리의 배리어 필름 제거율을 증가시키는 방법
TW201542784A (zh) 鎢化學機械拋光(cmp)之組合物
IL182537A (en) Metal ion-containing cmp composition and method for using the same
JP2022511087A (ja) コバルトcmpのための組成物および方法
US20250376610A1 (en) Silica-based slurry for selective polishing of silicon carbide
WO2025250750A1 (en) Silica-based slurry for selective polishing of carbon-based films

Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
KB Patent renewed
KB Patent renewed