CN101802125B - 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 - Google Patents
使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 Download PDFInfo
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- CN101802125B CN101802125B CN2008801073426A CN200880107342A CN101802125B CN 101802125 B CN101802125 B CN 101802125B CN 2008801073426 A CN2008801073426 A CN 2008801073426A CN 200880107342 A CN200880107342 A CN 200880107342A CN 101802125 B CN101802125 B CN 101802125B
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- 150000002500 ions Chemical class 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
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- IWYDHOAUDWTVEP-UHFFFAOYSA-N mandelic acid Chemical compound OC(=O)C(O)C1=CC=CC=C1 IWYDHOAUDWTVEP-UHFFFAOYSA-N 0.000 description 1
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- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
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- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
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- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
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- 239000005368 silicate glass Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- APSBXTVYXVQYAB-UHFFFAOYSA-M sodium docusate Chemical compound [Na+].CCCCC(CC)COC(=O)CC(S([O-])(=O)=O)C(=O)OCC(CC)CCCC APSBXTVYXVQYAB-UHFFFAOYSA-M 0.000 description 1
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- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US97434007P | 2007-09-21 | 2007-09-21 | |
| US60/974,340 | 2007-09-21 | ||
| PCT/US2008/010896 WO2009042072A2 (en) | 2007-09-21 | 2008-09-19 | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101802125A CN101802125A (zh) | 2010-08-11 |
| CN101802125B true CN101802125B (zh) | 2013-11-06 |
Family
ID=40472131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008801073426A Active CN101802125B (zh) | 2007-09-21 | 2008-09-19 | 使用经氨基硅烷处理的研磨剂颗粒的抛光组合物和方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7994057B2 (enExample) |
| EP (1) | EP2197972B1 (enExample) |
| JP (1) | JP5519507B2 (enExample) |
| KR (1) | KR101232585B1 (enExample) |
| CN (1) | CN101802125B (enExample) |
| IL (1) | IL203477A (enExample) |
| MY (1) | MY147729A (enExample) |
| TW (1) | TWI428436B (enExample) |
| WO (1) | WO2009042072A2 (enExample) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009042073A2 (en) * | 2007-09-21 | 2009-04-02 | Cabot Microelectronics Corporation | Polishing composition and method utilizing abrasive particles treated with an aminosilane |
| JP5209284B2 (ja) * | 2007-11-28 | 2013-06-12 | 日本ミクロコーティング株式会社 | 研磨シートおよび研磨シートの製造方法 |
| JP5441362B2 (ja) * | 2008-05-30 | 2014-03-12 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5843613B2 (ja) | 2009-01-20 | 2016-01-13 | キャボット コーポレイションＣａｂｏｔ Ｃｏｒｐｏｒａｔｉｏｎ | シラン変性金属酸化物を含む組成物 |
| JP5601922B2 (ja) * | 2010-07-29 | 2014-10-08 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
| JP5925454B2 (ja) | 2010-12-16 | 2016-05-25 | 花王株式会社 | 磁気ディスク基板用研磨液組成物 |
| KR101951265B1 (ko) * | 2011-03-25 | 2019-02-22 | 아크조 노벨 케미칼즈 인터내셔널 비.브이. | 알키드계 코팅 조성물 |
| US8808573B2 (en) * | 2011-04-15 | 2014-08-19 | Cabot Microelectronics Corporation | Compositions and methods for selective polishing of silicon nitride materials |
| US8778212B2 (en) * | 2012-05-22 | 2014-07-15 | Cabot Microelectronics Corporation | CMP composition containing zirconia particles and method of use |
| KR102136432B1 (ko) * | 2012-06-11 | 2020-07-21 | 캐보트 마이크로일렉트로닉스 코포레이션 | 몰리브덴을 연마하기 위한 조성물 및 방법 |
| US8778211B2 (en) * | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
| KR20160057397A (ko) * | 2013-09-20 | 2016-05-23 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
| CN104745083B (zh) * | 2013-12-25 | 2018-09-14 | 安集微电子（上海）有限公司 | 一种化学机械抛光液以及抛光方法 |
| US9303189B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9303188B2 (en) * | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9238754B2 (en) * | 2014-03-11 | 2016-01-19 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| US9309442B2 (en) | 2014-03-21 | 2016-04-12 | Cabot Microelectronics Corporation | Composition for tungsten buffing |
| US9127187B1 (en) * | 2014-03-24 | 2015-09-08 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9303190B2 (en) | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
| US9583359B2 (en) * | 2014-04-04 | 2017-02-28 | Fujifilm Planar Solutions, LLC | Polishing compositions and methods for selectively polishing silicon nitride over silicon oxide films |
| TWI561620B (en) * | 2014-06-20 | 2016-12-11 | Cabot Microelectronics Corp | Cmp slurry compositions and methods for aluminum polishing |
| JP6612790B2 (ja) | 2014-06-25 | 2019-11-27 | キャボット マイクロエレクトロニクス コーポレイション | 銅バリアの化学機械研磨組成物 |
| WO2015200668A1 (en) * | 2014-06-25 | 2015-12-30 | Cabot Microelectronics Corporation | Methods for fabricating a chemical-mechanical polishing composition |
| TWI561621B (en) * | 2014-06-25 | 2016-12-11 | Cabot Microelectronics Corp | Tungsten chemical-mechanical polishing composition |
| CN105802510A (zh) * | 2014-12-29 | 2016-07-27 | 安集微电子（上海）有限公司 | 一种化学机械抛光液及其应用 |
| CN105802508B (zh) * | 2014-12-29 | 2020-03-13 | 安集微电子（上海）有限公司 | 一种氮唑类化合物在提高化学机械抛光液稳定性中的应用 |
| JP6719452B2 (ja) * | 2015-03-30 | 2020-07-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US9597768B1 (en) * | 2015-09-09 | 2017-03-21 | Cabot Microelectronics Corporation | Selective nitride slurries with improved stability and improved polishing characteristics |
| US9771496B2 (en) | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
| US9631122B1 (en) * | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
| KR102545800B1 (ko) * | 2015-12-04 | 2023-06-20 | 솔브레인 주식회사 | 식각용 조성물 및 이를 이용한 반도체 소자의 제조방법 |
| TWI738743B (zh) | 2016-03-23 | 2021-09-11 | 美商道康寧公司 | 金屬-聚有機矽氧烷 |
| US20190112196A1 (en) * | 2016-03-30 | 2019-04-18 | Fujimi Incorporated | Cation-modified silica raw material dispersion |
| WO2017214185A1 (en) * | 2016-06-07 | 2017-12-14 | Cabot Microelectronics Corporation | Chemical-mechanical processing slurry and methods for processing a nickel substrate surface |
| US9783702B1 (en) * | 2016-10-19 | 2017-10-10 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Aqueous compositions of low abrasive silica particles |
| US10294399B2 (en) * | 2017-01-05 | 2019-05-21 | Cabot Microelectronics Corporation | Composition and method for polishing silicon carbide |
| US10221336B2 (en) * | 2017-06-16 | 2019-03-05 | rohm and Hass Electronic Materials CMP Holdings, Inc. | Aqueous silica slurry compositions for use in shallow trench isolation and methods of using them |
| EP3681964B1 (en) | 2017-09-15 | 2023-11-22 | CMC Materials, Inc. | Composition for tungsten cmp |
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- 2008-09-19 US US12/234,173 patent/US7994057B2/en active Active
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| US20090081871A1 (en) | 2009-03-26 |
| WO2009042072A2 (en) | 2009-04-02 |
| KR20100074207A (ko) | 2010-07-01 |
| JP2010541203A (ja) | 2010-12-24 |
| TW200918658A (en) | 2009-05-01 |
| EP2197972A2 (en) | 2010-06-23 |
| WO2009042072A3 (en) | 2009-06-18 |
| KR101232585B1 (ko) | 2013-02-12 |
| TWI428436B (zh) | 2014-03-01 |
| IL203477A (en) | 2013-03-24 |
| US7994057B2 (en) | 2011-08-09 |
| JP5519507B2 (ja) | 2014-06-11 |
| CN101802125A (zh) | 2010-08-11 |
| EP2197972B1 (en) | 2020-04-01 |
| MY147729A (en) | 2013-01-15 |
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