TWI760494B - 用於淺溝槽隔離的水性二氧化矽漿料組合物及其使用方法 - Google Patents
用於淺溝槽隔離的水性二氧化矽漿料組合物及其使用方法 Download PDFInfo
- Publication number
- TWI760494B TWI760494B TW107117019A TW107117019A TWI760494B TW I760494 B TWI760494 B TW I760494B TW 107117019 A TW107117019 A TW 107117019A TW 107117019 A TW107117019 A TW 107117019A TW I760494 B TWI760494 B TW I760494B
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- Taiwan
- Prior art keywords
- composition
- cmp polishing
- copolymer
- diallyldimethylammonium
- colloidal silica
- Prior art date
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 239000000203 mixture Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims description 19
- 238000002955 isolation Methods 0.000 title description 5
- 238000005498 polishing Methods 0.000 claims abstract description 84
- 239000002245 particle Substances 0.000 claims abstract description 45
- 239000008119 colloidal silica Substances 0.000 claims abstract description 30
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 17
- 229920003118 cationic copolymer Polymers 0.000 claims abstract description 16
- 229920001577 copolymer Polymers 0.000 claims abstract description 15
- NJSSICCENMLTKO-HRCBOCMUSA-N [(1r,2s,4r,5r)-3-hydroxy-4-(4-methylphenyl)sulfonyloxy-6,8-dioxabicyclo[3.2.1]octan-2-yl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)O[C@H]1C(O)[C@@H](OS(=O)(=O)C=2C=CC(C)=CC=2)[C@@H]2OC[C@H]1O2 NJSSICCENMLTKO-HRCBOCMUSA-N 0.000 claims abstract description 14
- -1 diallyldimethylammonium halide Chemical class 0.000 claims abstract description 14
- YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical class C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000004767 nitrides Chemical class 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000002002 slurry Substances 0.000 abstract description 31
- 235000012431 wafers Nutrition 0.000 abstract description 31
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 description 17
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 125000002091 cationic group Chemical group 0.000 description 7
- 239000000654 additive Substances 0.000 description 6
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 6
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229920002125 Sokalan® Polymers 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 229920001519 homopolymer Polymers 0.000 description 3
- 230000003301 hydrolyzing effect Effects 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241000408939 Atalopedes campestris Species 0.000 description 2
- 239000005630 Diquat Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000003868 ammonium compounds Chemical group 0.000 description 2
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001143 conditioned effect Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- SYJFEGQWDCRVNX-UHFFFAOYSA-N diquat Chemical compound C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 SYJFEGQWDCRVNX-UHFFFAOYSA-N 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 238000007542 hardness measurement Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- SOYBEXQHNURCGE-UHFFFAOYSA-N 3-ethoxypropan-1-amine Chemical compound CCOCCCN SOYBEXQHNURCGE-UHFFFAOYSA-N 0.000 description 1
- OCKGFTQIICXDQW-ZEQRLZLVSA-N 5-[(1r)-1-hydroxy-2-[4-[(2r)-2-hydroxy-2-(4-methyl-1-oxo-3h-2-benzofuran-5-yl)ethyl]piperazin-1-yl]ethyl]-4-methyl-3h-2-benzofuran-1-one Chemical compound C1=C2C(=O)OCC2=C(C)C([C@@H](O)CN2CCN(CC2)C[C@H](O)C2=CC=C3C(=O)OCC3=C2C)=C1 OCKGFTQIICXDQW-ZEQRLZLVSA-N 0.000 description 1
- 102100032578 Adenosine deaminase domain-containing protein 1 Human genes 0.000 description 1
- 101000797006 Homo sapiens Adenosine deaminase domain-containing protein 1 Proteins 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 238000012644 addition polymerization Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 125000005210 alkyl ammonium group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 239000007900 aqueous suspension Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007870 radical polymerization initiator Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007655 standard test method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XQMTUIZTZJXUFM-UHFFFAOYSA-N tetraethoxy silicate Chemical compound CCOO[Si](OOCC)(OOCC)OOCC XQMTUIZTZJXUFM-UHFFFAOYSA-N 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G1/00—Control arrangements or circuits, of interest only in connection with cathode-ray tube indicators; General aspects or details, e.g. selection emphasis on particular characters, dashed line or dotted line generation; Preprocessing of data
- G09G1/04—Deflection circuits ; Constructional details not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
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Abstract
本發明提供水性CMP拋光組合物,所述組合物按所述組合物之總重量計包括0.5至30重量%的複數個含有陽離子氮原子的細長、彎曲或球狀膠態二氧化矽顆粒的分散體,以及0.001至0.5重量%、較佳10至500 ppm的二烯丙基二甲基銨鹽,如二烯丙基二甲基鹵化銨的陽離子共聚物,其中所述組合物之pH為1至4.5。較佳地,二烯丙基二甲基銨鹽的所述陽離子共聚物包括二烯丙基二甲基氯化銨(DADMAC)及二氧化硫之共聚物。所述漿料組合物在具有氮化物及矽圖案的圖案晶圓之CMP拋光中表現出良好氧化物選擇性。
Description
本發明係關於水性化學機械平坦化(CMP)拋光組合物,所述組合物包括複數個球形膠態二氧化矽顆粒或含有陽離子氮原子的細長、彎曲或球狀膠態二氧化矽顆粒或其混合物的一或多種分散體,以及二烯丙基二甲基銨鹽(如二烯丙基二甲基氯化銨(DADMAC))及二氧化硫之共聚物,其中組合物之pH為1至4.5。
在前端(FEOL)半導體製程中,淺溝槽隔離(STI)對積體電路製造中之柵極形成至關重要,如形成晶體管之前。在STI中,如原矽酸四乙酯(TEOS)或二氧化矽的電介質被過量地沈積在矽晶圓中形成之開口中,例如藉由氮化矽(SiN)屏障與積體電路的其餘部分隔離的溝槽或隔離區。然後使用CMP製程移除多餘的電介質,產生其中電介質之預定圖案鑲嵌在矽晶圓中之結構。用於STI的CMP需要自隔離區移除及平坦化二氧化矽覆蓋層,從而產生與二氧化矽填充的溝槽共面的表面。在STI中,氮化矽膜表面必須清除二氧化矽或氧化矽,以使隨後在後續處理中移除氮化物硬掩模。可接受的氧化物:氮化物移除速率比為必要的,以防止損傷下面的Si活性區且提供過度拋光間距從而確保所有圖案密度均清除氧化物。此外,必須避免任何溝槽中之氧化物凹陷,以防止成品柵極中之低臨限值電壓洩漏。
目前,與CMP拋光墊一起使用以拋光基板之水性化學機械平坦化拋光(CMP拋光)組合物的使用者希望避免使用包括二氧化鈰之CMP拋光組合物。二氧化鈰漿料對二氧化矽表現出高於氮化矽的選擇性且避免氮化矽暴露時移除溝槽區中之氧化物,但成本高,存在移除速率(RR)及製程穩定性問題,且易於在拋光期間引起缺陷。二氧化矽漿料配方提供成本較低、無缺陷的解決方案,但迄今為止,氧化物凹陷控制不令人滿意,且氧化物:氮化物選擇性不足以用於STI應用。
Grumbine等人的美國專利第9,303,188 B2號揭示一種用於拋光具有鎢層的基板的化學機械拋光組合物,所述組合物在液體載體中包括水基液體載劑、含帶陽離子電荷的膠態二氧化矽研磨劑及聚陽離子胺化合物的溶液。所述組合物可包含選自多胺及含有胺官能基之聚合物(如二烯丙基二甲基氯化銨)的胺基聚合物。所述組合物不呈現可接受的氧化物凹陷控制以及用於STI應用的氧化物:氮化物選擇性不足。
本發明人致力於解決提供水性二氧化矽漿料的問題以及使用漿料的方法,所述水性二氧化矽漿料實現可接受的氧化物凹陷控制及氧化物:氮化物選擇性以用於STI應用。
1.根據本發明,水性化學機械平坦化拋光(CMP拋光)組合物包括複數個含有陽離子氮原子的細長、彎曲或球狀膠態二氧化矽顆粒的分散體,例如,對於平均顆粒的顆粒最長尺寸與垂直於最長尺寸的其直徑的縱橫比為1.8:1至3:1之彼等,或其與球形膠態二氧化矽顆粒的混合物,以及0.001至0.5重量%或較佳10至500 ppm的二烯丙基二甲基銨鹽(較佳為鹵鹽)的陽離子共聚物,如二烯丙基二甲基鹵化銨(DADMAC)及二氧化硫之共聚物,其中組合物之pH為1至4.5或較佳2.5至4.3,且另外其中按組合物之總重量計,呈固體的細長、彎曲或球狀膠態二氧化矽顆粒的分散體之量在0.5至30重量%、或較佳1至25重量%、或更佳1至20重量%之範圍內。
2.根據以上第1項所闡述之水性CMP拋光組合物,其中按組合物中膠態二氧化矽顆粒的總固體重量計,細長、彎曲或球狀膠態二氧化矽顆粒的分散體之量在80至99.9重量%範圍內,或較佳95至99.9重量%範圍內。
3.根據以上第1項或第2項中任一項所闡述之水性CMP拋光組合物,其中膠態二氧化矽顆粒分散體中膠態二氧化矽顆粒的重均粒徑(CPS)或其混合物中之此類粒徑的加權平均值在10 nm至200 nm範圍內,或較佳在25 nm至80 nm範圍內。
4.根據以上第1、2或3項中任一項所闡述之水性CMP拋光組合物,其中二烯丙基二甲基銨鹽(較佳為鹵鹽)及二氧化硫的陽離子共聚物包括45至55莫耳%、或較佳48至52莫耳%的二烯丙基二甲基銨鹽及45至55莫耳%、或較佳48至52莫耳%的二氧化硫。
5.根據以上第1、2、3或4項中任一項所闡述之水性CMP拋光組合物,其中二烯丙基二甲基銨鹽(較佳為鹵鹽)及二氧化硫的陽離子共聚物之重均分子量為1,000至15,000,或較佳為2,000至12,000。
6.根據本發明之另一態樣,使用水性CMP拋光組合物的方法包括用以上第1項至第5項中任一項所闡述之CMP拋光墊及水性CMP拋光組合物拋光基板。
7.根據以上第6項所闡述之本發明方法,其中基板包括二氧化矽或原矽酸四乙酯(TEOS)及氮化矽,如SiN或Si3
N4
或其混合物,且拋光導致氧化物:氮化物移除速率比為至少3:1,例如3:1至25:1,或較佳8:1至18:1,例如至少8:1。
8.根據以上第6項或第7項中任一項所闡述的用於拋光基板之本發明方法,其中拋光下壓力在6.9 kPa(1 psi)至41.5 kPa(6 psi)或較佳12 kPa(1.8 psi)至36 kPa(5.2 psi)範圍內。
9.根據以上第6、7或8項中任一項所闡述的用於拋光基板之本發明方法,其中CMP拋光組合物包括總計0.5至5重量%、或較佳1至3重量%的細長、彎曲或球狀膠態二氧化矽顆粒的分散體的總固體含量。CMP拋光組合物可作為濃縮物存儲及運輸,然後在拋光基板時用水稀釋。
除非另有指示,否則溫度及壓力之條件為環境溫度及標準壓力。所述的所有範圍均具有包含性及可組合性。
除非另有指示,否則任何含有圓括號的術語均可選地指整個術語,即如同不存在圓括號且無圓括號的術語以及其組合均為可選的。
所有範圍均具有包含性及可組合性。舉例而言,術語「50至3000 cPs或100或大於100 cPs的範圍」將包含50至100 cPs、50至3000 cPs及100至3000 cPs中之每一者。
如本文所用,術語「ASTM」係指賓夕法尼亞州西康舍霍肯的ASTM國際標準組織(ASTM International, West Conshohocken, PA)的出版物。
如本文所用,術語「膠態穩定」意指給定組合物不凝膠或沈澱,且在給定時間及給定溫度之後,在目力檢驗時保持透明。
如本文所用,術語「硬鹼」係指金屬氫氧化物,包含鹼(鹼土)金屬氫氧化物,如NaOH、KOH或Ca(OH)2
。
如本文所用,術語「ISO」係指瑞士日內瓦的國際標準化組織(International Organization for Standardization, Geneva, CH)的出版物。
如本文所用,術語「粒徑(CPS)」意指如藉由CPS儀器(荷蘭(The Netherlands))盤式離心機系統測定的組合物的重均粒徑。使用離心力在溶劑中將顆粒大小分離且使用光學光散射進行定量。
如本文所用,術語「肖氏D硬度(Shore D hardness)」為如根據ASTM D2240-15 (2015),「《橡膠特性、硬度計硬度的標準測試方法(Standard Test Method for Rubber Property, Durometer Hardness)》」所量測之給定材料的2種第二硬度。在裝備有D探針的雷克斯混合硬度測試儀(Rex Hybrid hardness tester)(伊利諾伊州比弗洛格羅夫的雷克斯儀錶公司(Rex Gauge Company,Inc.,Buffalo Grove,IL))上量測硬度。對於各硬度量測,將六個樣品堆疊且混洗;且在測試且使用ASTM D2240-15(2015)中概述的方法論來改進硬度測試的可重複性之前,藉由將各測試墊置於50%相對濕度下在23℃下五天來調節各測試墊。在本發明中,拋光層或拋光墊的聚胺基甲酸酯反應產物的肖氏D硬度包含反應產物的肖氏D硬度。
如本文所用,對於給定組合物,術語「二氧化矽顆粒固體」或「二氧化矽固體」意指球形膠態二氧化矽顆粒的總量加上細長、彎曲或球狀膠態二氧化矽顆粒的總量,包含處理彼等顆粒之任何組分。
如本文所用,術語「固體」意指除水或氨之外的任何材料,所述材料不管其物理狀態均在使用條件下不揮發。因此,將在使用條件下不揮發的液體矽烷或添加劑視為「固體」。
如本文所用,術語「強酸」係指pKa
為2或更低的質子酸,如無機酸,如硫酸或硝酸。
如本文所用,術語「使用條件」意指使用給定組合物時的溫度及壓力,包含在使用期間或作為使用結果時溫度及壓力的增加。
如本文所用,術語「重量分數二氧化矽」意指按組合物的總重量/100%計二氧化矽的總重量%。因此,30重量%的二氧化矽相當於0.3的重量分數。
如本文所用,術語「加權平均值」意指來自不同組合物(例如球形膠態二氧化矽顆粒的分散體及細長膠態二氧化矽顆粒的分散體)的兩種或更多種量測值(例如平均粒度或分子量)的平均值,所述平均值由各自乘以其固體重量分數產生,其中總固體重量分數合計為1(1.00)。
如本文中所使用,術語「重量%」表示重量百分比。
如本文所用,術語「細長、彎曲或球狀膠態二氧化矽顆粒」係指膠態二氧化矽顆粒,如一般熟習此項技術者已知的任何方法(如透射電子顯微鏡(TEM))測定或如由顆粒分散體的製造商報道,所述膠態二氧化矽顆粒在平均顆粒中之最長尺寸與垂直於最長尺寸的直徑之縱橫比為1.8:1至3:1。
本發明人驚奇地發現,具有陽離子電荷的細長、彎曲或球狀膠態二氧化矽顆粒分散體的水性CMP拋光組合物以及按組合物之總重量計高達0.5重量%的二烯丙基二甲基銨鹽(如鹵鹽或銨鹽)及二氧化硫的陽離子互聚物尤其適合於平坦化或拋光基板,如已經過淺溝槽隔離(STI)處理的矽晶圓。覆蓋矽晶圓上的壓力響應表徵揭示此等漿料以非普雷斯頓(non-Prestonian)方式拋光氧化矽:在低的下壓力下氧化物移除速率可忽略不計,且在高於「開啟」壓力的壓力下隨著下壓力增加而增加。此非普雷斯頓氧化物RR(y軸)與下壓力(x軸)曲線的x軸截距不為零。本發明之水性CMP拋光組合物使得二氧化矽之CMP拋光具有令人滿意的移除速率,且在覆蓋式及圖案化晶圓上對氧化矽比氮化矽提供可接受的選擇性。最顯著地,與其他二氧化矽漿料相比,所述組合物能夠改善溝槽氧化物損失及凹陷。
根據本發明,適合之膠態二氧化矽組合物可包括藉由習知溶膠凝膠聚合或藉由水玻璃的懸浮聚合製備的二氧化矽分散體,從而以分佈方式或以混合方式產生複數個細長、彎曲或球狀膠態二氧化矽顆粒,其可包含球形膠態二氧化矽顆粒。
適合之細長、彎曲或球狀二氧化矽顆粒藉由水解縮合以已知方式由前體(如四乙氧基矽烷(TEOS)或四甲氧基矽烷(TMOS))形成的矽醇由懸浮聚合製得。製備細長、彎曲或球狀二氧化矽顆粒的方法為已知的,且可在例如Higuchi等人的美國專利第8,529,787號中發現。水解縮合包括使前體在水性懸浮液中在鹼性催化劑(如烷基氫氧化銨、烷氧基烷基胺,如乙氧基丙胺(EOPA)、烷基胺或KOH,較佳為四甲基氫氧化銨)存在下反應;水解縮合過程可將一或多個陽離子氮原子併入細長、彎曲或球狀二氧化矽顆粒中。較佳地,細長、彎曲或球狀膠態二氧化矽顆粒在4或更低的pH下為陽離子型的。
適合之彎曲或球狀膠態二氧化矽顆粒分散體可以商品名HL-2、HL-3、HL-4、PL-2、PL-3或BS-2及BS-3漿料購自日本大阪的扶桑化工有限公司(Fuso Chemical Co., Ltd., Osaka, JP(Fuso))。來自扶桑的HL及BS系列顆粒含有一或多個氮原子,其在pH 4或更低時被賦予陽離子電荷。
為確保本發明之含水CMP拋光組合物的膠態穩定性,組合物之pH在1至4.5或較佳2.5至4之範圍內。所述組合物在所需pH範圍之上往往失去其穩定性。
本發明之陽離子二烯丙基二甲基銨鹽及二氧化硫共聚物有助於選擇性及防止拋光中之凹陷。按組合物之總重量計,陽離子共聚物之量最高達0.5重量%。太多的陽離子共聚物可鈍化基板之電介質或二氧化矽表面。
本發明之陽離子共聚物可在存在或不存在酸(如鹽酸或乙醇酸)及自由基聚合引發劑(如過硫酸銨)下在極性溶劑(如水)中藉由加成聚合製得。此類聚合方法例如在Yusuke等人的美國專利第9,006,383 B2中詳細描述。
本發明之水性CMP拋光組合物可包含pH調節劑,如無機酸(例如硝酸)或有機酸(例如檸檬酸)。
本發明之水性CMP拋光組合物可包括其他陽離子添加劑,如多胺,按總固體計,其量可高達1重量%。
適合之添加劑亦可包含例如四級銨化合物及雙四級銨化合物,例如98重量%(Sachem,Austin,TX)的N,N,N,N',N',N'-六丁基-1,4-丁烷二銨二氫氧化物;及陽離子胺基矽烷,例如98%的N-(2-胺基乙基)-3-胺基丙基三甲氧基矽烷(Gelest Inc.,Morrisville,PA),或98%的N,N-二乙基胺基甲基)三乙氧基矽烷(Gelest Inc.)。
較佳地,水性CMP拋光組合物基本上由二烯丙基二甲基銨鹽的本發明共聚物及陽離子研磨劑組成,且不包含將進一步與研磨劑組分或共聚物相互作用的材料。此類組合物較佳不包含與二氧化矽相互作用的雙四級銨化合物;且它們不包含與共聚物相互作用的陰離子化合物及非離子界面活性劑。水性CMP拋光組合物可用水或與水混溶的另一種液體稀釋。
理想地,本發明之CMP拋光在用本發明之CMP拋光組合物進行的STI處理中進行,較佳地使得氮化矽基本上不被移除且二氧化矽被適當地平坦化而無溝槽內的電介質或二氧化矽被過度腐蝕或凹陷。
在使用中,晶圓基板之STI處理涉及提供其上沈積有氮化矽層的矽基板。在光刻之後,將溝槽蝕刻至包括氮化矽覆蓋層的基板上,且在其上沈積過量的電介質,例如二氧化矽。然後對基板進行平坦化直到氮化矽表面層暴露但基本上不被移除,使得留在溝槽中之電介質或氧化矽大致與氮化矽的邊緣齊平。
實例:以下實例說明本發明之各種特徵。
在以下實例中,除非另有指示,否則溫度及壓力條件為環境溫度或室溫及標準壓力。
1.法國Lamotte的Merck KgAA;3.扶桑化學,大阪,JP;4.在pH為3.0下測定電荷,且用TMOS及含鹼性催化劑的胺(如四甲基氫氧化銨)形成陽離子顆粒;5.從源頭輸送pH。
DiquatTM
添加劑:N,N,N,N',N',N'-六丁基-1,4-丁烷二銨二氫氧化物,98重量%(Sachem,Austin,TX);
漿料G:在pH為2.39且含有20重量%的漿料A固體,4重量%的漿料B固體,0.2重量%的DiquatTM
添加劑及0.112重量%的HNO3
下的24重量%的固體配製物。在POU(6%,4倍稀釋)下,pH為約pH 3。
如製造商(PAS-A-1,Nitto Boseke Co.Ltd,Fukushima, JP)所報道,共聚物1為DADMAC及二氧化硫的1:1共聚物,其重均分子量(MW)(使用聚乙二醇標準物的GPC)為5,000;
聚合物2是重均分子量為(MW,GPC)為8,500的DADMAC的均聚物(Nitto Boseke Co.)。
漿料E:二氧化鈰漿料,pH 5.2,聚丙烯酸分散劑,未稀釋的0.75重量%二氧化鈰固體,如所使用的1:3稀釋。
漿料F:重量平均MW 1800/檸檬酸/pH 3.3的漿料C/67 ppm聚(丙烯酸)(PAA)的2重量%固體組合物;且, 漿料C在低於pH 4.5時帶正電。
實例中使用之各種膠態二氧化矽顆粒列於上表A中。
在以下實例中使用以下縮寫: POU:使用點;RR:移除速率;
在下列實例中使用以下測試方法:
POU處之pH:使用點之pH(POU之pH)係在用水將指定濃縮物組合物稀釋至指定固體含量之後的移除速率測試期間量測。
CMP(SP2xp)後缺陷計數:將四個TEOS晶圓用作各漿料之缺陷監測晶圓。各缺陷晶圓以3 psi、93/87 rpm及150 ml/min漿料流速拋光60 s。拋光之後,在 SurfscanTM
SP2xp
度量工具(KLA-Tencor,Milpitas,CA)上掃描晶圓以獲得CMP後缺陷晶圓圖,隨後自動SEM檢視100個隨機缺陷。使用具有寬通道設置(即沒有缺陷尺寸限制)的Klarity缺陷軟體(KLA-Tencor,Milpitas,CA)來提取各晶圓之CMP後總缺陷計數。缺陷計數應儘可能低。
HF(氫氟酸)後缺陷計數:在CMP後缺陷分析後,使用M3307-2949 VeecoTM
HF清潔劑(Veeco, Horsham, PA)將晶圓暴露於1.92重量%的HF溶液中足夠的時間以移除200 Å的給定基板。在Surfscan SP2xp
(KLA-Tencor)上重新掃描晶圓以獲得HF後缺陷晶圓圖,隨後自動SEM檢視100個隨機缺陷。
移除速率:在移除速率測試中,使用MirraTM
(200 mm)拋光機或具有IC1010TM
或其他所指示CMP拋光墊的「Mirra RR」(加利福尼亞州聖克拉拉的應用材料公司(Applied Materials, Santa Clara, CA))拋光裝置(密歇根州米德蘭的陶氏化學公司(The Dow Chemical Company, Midland, MI)(陶氏))拋光STI圖案晶圓基板,其具有含MIT掩模(SKW-3晶圓,加利福尼亞州聖克拉拉的SKW, Inc.)的指定特徵%(其對應於相對於其總面積晶圓中之活性面積或高面積),使用下表1中定義之CMP拋光組合物,以20.7 kPa(3 psi)的下壓力,漿液流率為150 mL/min,壓板速度為93 rpm且載劑速度為87 rpm。在拋光期間,使用100%原位調節,用KinikTM
AD3CS-211250-1FN調節盤(中國砂輪企業(Kinik Company),臺灣)以3.17 kg(7磅力)的壓力調節墊。
多步驟CMP拋光-P1(第一步驟)及P2(後續步驟):進行CMP拋光,使得在第一步驟或P1過程中,移除覆蓋層高密度電漿氧化物(HDP)膜。使用VP6000TM
聚胺基甲酸酯CMP拋光墊(陶氏,肖氏D(2秒)硬度:53)及漿料E且藉由施加20.7 kPa(3 psi)的拋光下壓力及93 rpm的壓板速度來拋光膜。當完成平坦化時,在晶圓的中間晶粒上的50%圖案密度(PD)特徵上停止P1拋光。此時,約500 Å的HDP膜保留在50%的特徵上。然而,在較小的特徵上,如10%及20%的PD特徵,HDP膜被完全移除且底層氮化物膜被暴露。具有> 50% PD的特徵仍然在氮化物膜上具有顯著的電介質膜。在移至P2之前,使用SP100清潔化學品(含有TMAH)在OnTrak DSS-200 Synergy™工具(Lam Research,Fremont,CA)上清潔圖案化的晶圓以從晶圓移除二氧化鈰顆粒。使用具有1010TM
凹槽設計(陶氏)的ICTM
聚胺基甲酸酯拋光墊(陶氏,肖氏D(2秒)硬度:70)及所示漿料組合物,使用20.7 kPa(3 psi)之拋光下壓力進行P2拋光,且壓板速度為93 rpm。對於50%圖案密度特徵,拋光終點定義為清除HDP及氮化物膜暴露的時間。在各步驟拋光事件的50%圖案密度特徵上監測溝槽氧化物損失。亦量測100%圖案密度特徵上的HDP氧化物移除。過度拋光定義為在氮化矽暴露在50%圖案密度特徵之後在100%特徵上移除的HDP膜之量。選擇性計算為100%特徵上的氮化矽移除速率與HDP氧化物移除速率之比。藉由使用KLA-TencorTM
FX200度量工具(加利福尼亞州米爾皮塔斯的KLA Tencor(KLA Tencor, Milpitas, CA)使用具有3 mm邊緣排除的49點螺旋掃描量測拋光之前及之後的膜厚度來測定所有電介質膜厚度及移除速率。進一步的拋光細節闡述於下表B中。 表B:拋光參數
拋光持續指定的時間間隔或指定的過度拋光量。在下面的表3、4及5中之每一者中,效能標準A為溝槽氧化物損失(Å):在500 Å過度拋光量下可接受的溝槽氧化物損失小於250 Å,較佳在500 Å過度拋光量下小於215 Å;效能標準B為SiN損失(Å):在500 Å的過度拋光量下可接受的SiN損失小於200 Å,在500 Å過度拋光量下較佳小於150 Å;且效能標準A為凹陷(Å):在500 Å過度拋光量下可接受的凹陷小於200 Å,在500 Å過度拋光量下較佳小於175 Å。
如上表2所示,CMP拋光後的缺陷計數與用與缺少本發明之陽離子共聚物的二氧化鈰漿料(漿料E)或漿料4相同的方式拋光的同一晶圓的缺陷計數相比顯著下降。
如上表3所示,本發明漿料組合物的溝槽氧化物損失A、SiN損失B及凹陷C相較於比較實例2A中之僅細長陽離子二氧化矽漿料C隨時間顯著改善。
如上表4所示,在略微過度拋光的情況下,本發明漿料組合物的溝槽氧化物損失A、SiN損失B及凹陷C為可接受的。
如上表5所示,在略微過度拋光的情況下,用IC1010TM
墊(陶氏),本發明之漿料組合物2的溝槽氧化物損失A、SiN損失B及凹陷C均為可接受的;在實例4B中用稍軟的墊,凹陷C得到改善。
如上表6所示,DADMAC的均聚物不能提供任何接近具有DADMAC共聚物的本發明組合物的拋光效能的地方。將結果與上表2、3及4中之結果進行比較。
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Claims (10)
- 一種水性化學機械平坦化拋光(CMP拋光)組合物,所述組合物由下述所組成:水;複數個含有陽離子氮原子的細長、彎曲或球狀膠態二氧化矽顆粒的分散體;選自硫酸及硝酸組成群組的酸;以及10至500ppm的由二烯丙基二甲基鹵化銨鹽及二氧化硫之共聚物組成的二烯丙基二甲基銨鹽的陽離子共聚物,其中所述組合物之pH為1至4.5,且另外,其中所述細長、彎曲或球狀膠態二氧化矽顆粒的所述分散體之量在0.5至30重量%範圍內,所有重量均按所述組合物之總重量計。
- 如申請專利範圍第1項之水性CMP拋光組合物,其中所述細長、彎曲或球狀膠態二氧化矽顆粒的分散體就平均顆粒而言之最長尺寸與垂直於所述最長尺寸之直徑的縱橫比為1.8:1至3:1。
- 如申請專利範圍第1項之水性CMP拋光組合物,其中按所述組合物中之所述膠態二氧化矽顆粒的總固體重量計,所述細長、彎曲或球狀膠態二氧化矽顆粒的分散體之量在80至99.9重量%之範圍內。
- 如申請專利範圍第1項之水性CMP拋光組合物,其中二烯丙基二甲基銨鹽的所述陽離子共聚物由二烯丙基二甲基氯化銨(DADMAC)及二氧化硫之共聚物組成。
- 如申請專利範圍第1項之水性CMP拋光組合物,其中二烯丙基二甲基銨鹽的所述陽離子共聚物由45至55莫耳%的所述二烯丙基二甲基鹵化銨鹽及45至55莫耳%的所述二氧化硫之共聚物組成。
- 如申請專利範圍第4項之水性CMP拋光組合物,其中由二烯丙基二甲基氯化銨及二氧化硫之共聚物組成的二烯丙基二甲基銨鹽的所述陽離子共聚物之重均分子量為1,000至15,000。
- 如申請專利範圍第1項之水性CMP拋光組合物,其中所述組合物之pH為2.5至4.3。
- 如申請專利範圍第4項之水性CMP拋光組合物,其中二烯丙基二甲基銨鹽的所述陽離子共聚物由含量為10至20ppm的二烯丙基二甲基氯化銨及二氧化硫之共聚物組成。
- 一種使用如申請專利範圍第1項之水性CMP拋光組合物之方法,包括:用CMP拋光墊及水性CMP拋光組合物拋光基板。
- 如申請專利範圍第9項之方法,其中所述基板包括二氧化矽及氮化矽二者,且所述拋光導致氧化物:氮化物移除速率比為3:1至25:1。
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---|---|---|---|---|
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US20110209413A1 (en) * | 2007-11-30 | 2011-09-01 | Jgc Catalysts And Chemicals Ltd. | Non-Spherical Silica Sol, Process for Producing the Same, and Composition for Polishing |
TWI428436B (zh) * | 2007-09-21 | 2014-03-01 | Cabot Microelectronics Corp | 拋光組合物及使用經胺基矽烷處理之研磨顆粒的方法 |
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US20020104269A1 (en) | 2001-01-26 | 2002-08-08 | Applied Materials, Inc. | Photochemically enhanced chemical polish |
US7004819B2 (en) | 2002-01-18 | 2006-02-28 | Cabot Microelectronics Corporation | CMP systems and methods utilizing amine-containing polymers |
US6866793B2 (en) | 2002-09-26 | 2005-03-15 | University Of Florida Research Foundation, Inc. | High selectivity and high planarity dielectric polishing |
US7504044B2 (en) | 2004-11-05 | 2009-03-17 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
US7531105B2 (en) * | 2004-11-05 | 2009-05-12 | Cabot Microelectronics Corporation | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
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US8529787B2 (en) | 2008-09-26 | 2013-09-10 | Fuso Chemical Co., Ltd. | Colloidal silica containing silica secondary particles having bent structure and/or branched structure, and method for producing same |
WO2010036358A1 (en) | 2008-09-26 | 2010-04-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
US9006383B2 (en) | 2010-05-26 | 2015-04-14 | Nitto Boseki Co., Ltd. | Method for producing copolymer of diallylamine and sulfur dioxide |
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US9303188B2 (en) | 2014-03-11 | 2016-04-05 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
US9303190B2 (en) * | 2014-03-24 | 2016-04-05 | Cabot Microelectronics Corporation | Mixed abrasive tungsten CMP composition |
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US9293339B1 (en) | 2015-09-24 | 2016-03-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of polishing semiconductor substrate |
US9631122B1 (en) | 2015-10-28 | 2017-04-25 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant |
US9771496B2 (en) * | 2015-10-28 | 2017-09-26 | Cabot Microelectronics Corporation | Tungsten-processing slurry with cationic surfactant and cyclodextrin |
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