TWI412123B - 半導體記憶裝置 - Google Patents

半導體記憶裝置 Download PDF

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Publication number
TWI412123B
TWI412123B TW099131002A TW99131002A TWI412123B TW I412123 B TWI412123 B TW I412123B TW 099131002 A TW099131002 A TW 099131002A TW 99131002 A TW99131002 A TW 99131002A TW I412123 B TWI412123 B TW I412123B
Authority
TW
Taiwan
Prior art keywords
diffusion layer
nmos
layer
row
transistor
Prior art date
Application number
TW099131002A
Other languages
English (en)
Chinese (zh)
Other versions
TW201112402A (en
Inventor
Fujio Masuoka
Shintaro Arai
Original Assignee
Unisantis Elect Singapore Pte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Elect Singapore Pte filed Critical Unisantis Elect Singapore Pte
Publication of TW201112402A publication Critical patent/TW201112402A/zh
Application granted granted Critical
Publication of TWI412123B publication Critical patent/TWI412123B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

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  • Semiconductor Memories (AREA)
TW099131002A 2009-09-16 2010-09-14 半導體記憶裝置 TWI412123B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009214094A JP2011066109A (ja) 2009-09-16 2009-09-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
TW201112402A TW201112402A (en) 2011-04-01
TWI412123B true TWI412123B (zh) 2013-10-11

Family

ID=43033127

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099131002A TWI412123B (zh) 2009-09-16 2010-09-14 半導體記憶裝置

Country Status (6)

Country Link
US (1) US8507995B2 (enExample)
EP (1) EP2299485A1 (enExample)
JP (1) JP2011066109A (enExample)
KR (1) KR20110030354A (enExample)
CN (1) CN102024818A (enExample)
TW (1) TWI412123B (enExample)

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JP5990401B2 (ja) * 2012-05-29 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
JP2015141726A (ja) 2014-01-28 2015-08-03 株式会社東芝 半導体記憶装置
US9653563B2 (en) * 2014-04-18 2017-05-16 Taiwan Semiconductor Manufacturing Company Limited Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate
JP5986618B2 (ja) * 2014-12-04 2016-09-06 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6235662B2 (ja) * 2016-08-05 2017-11-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
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JP7185149B2 (ja) * 2018-08-31 2022-12-07 株式会社ソシオネクスト 半導体装置
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KR102796871B1 (ko) * 2020-07-20 2025-04-17 삼성전자주식회사 메모리 셀 스트링을 포함하는 수직형 비휘발성 메모리 장치

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WO2009096467A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

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Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2009096467A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Also Published As

Publication number Publication date
EP2299485A1 (en) 2011-03-23
JP2011066109A (ja) 2011-03-31
US8507995B2 (en) 2013-08-13
US20110062529A1 (en) 2011-03-17
KR20110030354A (ko) 2011-03-23
TW201112402A (en) 2011-04-01
CN102024818A (zh) 2011-04-20

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