KR20110030354A - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR20110030354A
KR20110030354A KR1020100089927A KR20100089927A KR20110030354A KR 20110030354 A KR20110030354 A KR 20110030354A KR 1020100089927 A KR1020100089927 A KR 1020100089927A KR 20100089927 A KR20100089927 A KR 20100089927A KR 20110030354 A KR20110030354 A KR 20110030354A
Authority
KR
South Korea
Prior art keywords
diffusion layer
nmos
transistors
transistor
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020100089927A
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English (en)
Korean (ko)
Inventor
후지오 마스오카
신타로 아라이
Original Assignee
니혼 유니산티스 에렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니혼 유니산티스 에렉트로닉스 가부시키가이샤 filed Critical 니혼 유니산티스 에렉트로닉스 가부시키가이샤
Publication of KR20110030354A publication Critical patent/KR20110030354A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

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  • Semiconductor Memories (AREA)
KR1020100089927A 2009-09-16 2010-09-14 반도체 기억 장치 Ceased KR20110030354A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-214094 2009-09-16
JP2009214094A JP2011066109A (ja) 2009-09-16 2009-09-16 半導体記憶装置

Publications (1)

Publication Number Publication Date
KR20110030354A true KR20110030354A (ko) 2011-03-23

Family

ID=43033127

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100089927A Ceased KR20110030354A (ko) 2009-09-16 2010-09-14 반도체 기억 장치

Country Status (6)

Country Link
US (1) US8507995B2 (enExample)
EP (1) EP2299485A1 (enExample)
JP (1) JP2011066109A (enExample)
KR (1) KR20110030354A (enExample)
CN (1) CN102024818A (enExample)
TW (1) TWI412123B (enExample)

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JP5990401B2 (ja) * 2012-05-29 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
JP2015141726A (ja) 2014-01-28 2015-08-03 株式会社東芝 半導体記憶装置
US9653563B2 (en) * 2014-04-18 2017-05-16 Taiwan Semiconductor Manufacturing Company Limited Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate
JP5986618B2 (ja) * 2014-12-04 2016-09-06 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP6375316B2 (ja) * 2016-01-06 2018-08-15 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP6235662B2 (ja) * 2016-08-05 2017-11-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
KR102699046B1 (ko) * 2016-12-15 2024-08-27 삼성전자주식회사 수직형 트랜지스터를 구비하는 집적 회로 및 이를 포함하는 반도체 장치
JP7185149B2 (ja) * 2018-08-31 2022-12-07 株式会社ソシオネクスト 半導体装置
US10818324B2 (en) 2018-12-18 2020-10-27 Micron Technology, Inc. Memory array decoding and interconnects
KR102796871B1 (ko) * 2020-07-20 2025-04-17 삼성전자주식회사 메모리 셀 스트링을 포함하는 수직형 비휘발성 메모리 장치

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US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
JP2825244B2 (ja) * 1988-12-09 1998-11-18 株式会社東芝 半導体装置
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
KR920022532A (ko) * 1991-05-13 1992-12-19 문정환 이중 수직 채널을 갖는 스태틱램 및 그 제조방법
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
JP3325072B2 (ja) 1992-03-02 2002-09-17 モトローラ・インコーポレイテッド 半導体メモリ装置
US5398200A (en) * 1992-03-02 1995-03-14 Motorola, Inc. Vertically formed semiconductor random access memory device
US5612563A (en) * 1992-03-02 1997-03-18 Motorola Inc. Vertically stacked vertical transistors used to form vertical logic gate structures
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JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
KR100401130B1 (ko) * 2001-03-28 2003-10-10 한국전자통신연구원 수직형 채널을 가지는 초미세 ｍｏｓ 트랜지스터 제조방법
DE10130766B4 (de) * 2001-06-26 2005-08-11 Infineon Technologies Ag Vertikal-Transistor, Speicheranordnung sowie Verfahren zum Herstellen eines Vertikal-Transistors
US6461900B1 (en) 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US6670642B2 (en) 2002-01-22 2003-12-30 Renesas Technology Corporation. Semiconductor memory device using vertical-channel transistors
US7476228B2 (en) * 2002-10-11 2009-01-13 Abdou M Samy Distraction screw for skeletal surgery and method of use
US7138685B2 (en) 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
KR100467027B1 (ko) 2003-01-07 2005-01-24 삼성전자주식회사 수직 트랜지스터로 구성된 에스램 소자 및 그 제조방법
US20040253143A1 (en) * 2003-06-16 2004-12-16 Yokogawa Electric Corporation Method for processing waste liquid in cartridges and a chemical reaction cartridge applying the method
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US20080057636A1 (en) * 2006-08-31 2008-03-06 Richard Lindsay Strained semiconductor device and method of making same
JP5114968B2 (ja) 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2009095998A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009095999A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
US8154086B2 (en) * 2008-01-29 2012-04-10 Unisantis Electronics Singapore Pte Ltd. Semiconductor surround gate SRAM storage device
WO2009096001A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
WO2009096000A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
US8158468B2 (en) * 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device

Also Published As

Publication number Publication date
TWI412123B (zh) 2013-10-11
EP2299485A1 (en) 2011-03-23
JP2011066109A (ja) 2011-03-31
US8507995B2 (en) 2013-08-13
US20110062529A1 (en) 2011-03-17
TW201112402A (en) 2011-04-01
CN102024818A (zh) 2011-04-20

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