JP2011066109A - 半導体記憶装置 - Google Patents

半導体記憶装置 Download PDF

Info

Publication number
JP2011066109A
JP2011066109A JP2009214094A JP2009214094A JP2011066109A JP 2011066109 A JP2011066109 A JP 2011066109A JP 2009214094 A JP2009214094 A JP 2009214094A JP 2009214094 A JP2009214094 A JP 2009214094A JP 2011066109 A JP2011066109 A JP 2011066109A
Authority
JP
Japan
Prior art keywords
diffusion layer
nmos
transistor
access transistor
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009214094A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011066109A5 (enExample
Inventor
Fujio Masuoka
富士雄 舛岡
Shintaro Arai
紳太郎 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Japan Ltd
Original Assignee
Unisantis Electronics Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Electronics Japan Ltd filed Critical Unisantis Electronics Japan Ltd
Priority to JP2009214094A priority Critical patent/JP2011066109A/ja
Priority to EP10009571A priority patent/EP2299485A1/en
Priority to TW099131002A priority patent/TWI412123B/zh
Priority to KR1020100089927A priority patent/KR20110030354A/ko
Priority to US12/882,847 priority patent/US8507995B2/en
Priority to CN201010285007.4A priority patent/CN102024818A/zh
Publication of JP2011066109A publication Critical patent/JP2011066109A/ja
Publication of JP2011066109A5 publication Critical patent/JP2011066109A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Semiconductor Memories (AREA)
JP2009214094A 2009-09-16 2009-09-16 半導体記憶装置 Pending JP2011066109A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2009214094A JP2011066109A (ja) 2009-09-16 2009-09-16 半導体記憶装置
EP10009571A EP2299485A1 (en) 2009-09-16 2010-09-14 SRAM cell comprising four NMOS SGTs and two load resistors
TW099131002A TWI412123B (zh) 2009-09-16 2010-09-14 半導體記憶裝置
KR1020100089927A KR20110030354A (ko) 2009-09-16 2010-09-14 반도체 기억 장치
US12/882,847 US8507995B2 (en) 2009-09-16 2010-09-15 Semiconductor memory device
CN201010285007.4A CN102024818A (zh) 2009-09-16 2010-09-16 半导体存储器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009214094A JP2011066109A (ja) 2009-09-16 2009-09-16 半導体記憶装置

Publications (2)

Publication Number Publication Date
JP2011066109A true JP2011066109A (ja) 2011-03-31
JP2011066109A5 JP2011066109A5 (enExample) 2011-07-21

Family

ID=43033127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009214094A Pending JP2011066109A (ja) 2009-09-16 2009-09-16 半導体記憶装置

Country Status (6)

Country Link
US (1) US8507995B2 (enExample)
EP (1) EP2299485A1 (enExample)
JP (1) JP2011066109A (enExample)
KR (1) KR20110030354A (enExample)
CN (1) CN102024818A (enExample)
TW (1) TWI412123B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015057857A (ja) * 2014-12-04 2015-03-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
US9275729B2 (en) 2014-01-28 2016-03-01 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2016086183A (ja) * 2016-01-06 2016-05-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP2016225641A (ja) * 2016-08-05 2016-12-28 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
WO2020044560A1 (ja) * 2018-08-31 2020-03-05 株式会社ソシオネクスト 半導体装置及びその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5990401B2 (ja) * 2012-05-29 2016-09-14 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102191215B1 (ko) 2013-12-20 2020-12-16 삼성전자주식회사 에스램 셀 및 그 제조 방법
US9653563B2 (en) * 2014-04-18 2017-05-16 Taiwan Semiconductor Manufacturing Company Limited Connection structure for vertical gate all around (VGAA) devices on semiconductor on insulator (SOI) substrate
KR102699046B1 (ko) * 2016-12-15 2024-08-27 삼성전자주식회사 수직형 트랜지스터를 구비하는 집적 회로 및 이를 포함하는 반도체 장치
US10818324B2 (en) 2018-12-18 2020-10-27 Micron Technology, Inc. Memory array decoding and interconnects
KR102796871B1 (ko) * 2020-07-20 2025-04-17 삼성전자주식회사 메모리 셀 스트링을 포함하는 수직형 비휘발성 메모리 장치

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156664A (ja) * 1988-12-09 1990-06-15 Toshiba Corp 半導体装置
WO2009096465A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096467A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096466A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6113661A (ja) 1984-06-29 1986-01-21 Nippon Telegr & Teleph Corp <Ntt> 半導体装置およびその製造方法
US4890144A (en) * 1987-09-14 1989-12-26 Motorola, Inc. Integrated circuit trench cell
JP3057661B2 (ja) 1988-09-06 2000-07-04 株式会社東芝 半導体装置
JP2703970B2 (ja) 1989-01-17 1998-01-26 株式会社東芝 Ｍｏｓ型半導体装置
US5258635A (en) * 1988-09-06 1993-11-02 Kabushiki Kaisha Toshiba MOS-type semiconductor integrated circuit device
JP2950558B2 (ja) 1989-11-01 1999-09-20 株式会社東芝 半導体装置
KR920022532A (ko) * 1991-05-13 1992-12-19 문정환 이중 수직 채널을 갖는 스태틱램 및 그 제조방법
US5308782A (en) * 1992-03-02 1994-05-03 Motorola Semiconductor memory device and method of formation
JP3325072B2 (ja) 1992-03-02 2002-09-17 モトローラ・インコーポレイテッド 半導体メモリ装置
US5398200A (en) * 1992-03-02 1995-03-14 Motorola, Inc. Vertically formed semiconductor random access memory device
US5612563A (en) * 1992-03-02 1997-03-18 Motorola Inc. Vertically stacked vertical transistors used to form vertical logic gate structures
JPH06268173A (ja) * 1993-03-15 1994-09-22 Toshiba Corp 半導体記憶装置
JP3403231B2 (ja) * 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
US5576238A (en) * 1995-06-15 1996-11-19 United Microelectronics Corporation Process for fabricating static random access memory having stacked transistors
JPH1079482A (ja) 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
KR100331845B1 (ko) * 1998-01-10 2002-05-10 박종섭 박막트랜지스터제조방법
US6304483B1 (en) * 1998-02-24 2001-10-16 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
JP4078721B2 (ja) 1998-08-24 2008-04-23 ソニー株式会社 半導体装置とその製造方法
JP3376302B2 (ja) * 1998-12-04 2003-02-10 株式会社東芝 半導体装置及びその製造方法
US6107660A (en) * 1999-05-19 2000-08-22 Worldwide Semiconductor Manufacturing Corp. Vertical thin film transistor
JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
KR100401130B1 (ko) * 2001-03-28 2003-10-10 한국전자통신연구원 수직형 채널을 가지는 초미세 ｍｏｓ 트랜지스터 제조방법
DE10130766B4 (de) * 2001-06-26 2005-08-11 Infineon Technologies Ag Vertikal-Transistor, Speicheranordnung sowie Verfahren zum Herstellen eines Vertikal-Transistors
US6461900B1 (en) 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US6670642B2 (en) 2002-01-22 2003-12-30 Renesas Technology Corporation. Semiconductor memory device using vertical-channel transistors
US7476228B2 (en) * 2002-10-11 2009-01-13 Abdou M Samy Distraction screw for skeletal surgery and method of use
US7138685B2 (en) 2002-12-11 2006-11-21 International Business Machines Corporation Vertical MOSFET SRAM cell
KR100467027B1 (ko) 2003-01-07 2005-01-24 삼성전자주식회사 수직 트랜지스터로 구성된 에스램 소자 및 그 제조방법
US20040253143A1 (en) * 2003-06-16 2004-12-16 Yokogawa Electric Corporation Method for processing waste liquid in cartridges and a chemical reaction cartridge applying the method
WO2005079182A2 (en) * 2004-01-22 2005-09-01 International Business Machines Corporation Vertical fin-fet mos devices
US20080057636A1 (en) * 2006-08-31 2008-03-06 Richard Lindsay Strained semiconductor device and method of making same
JP5114968B2 (ja) 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US8154086B2 (en) * 2008-01-29 2012-04-10 Unisantis Electronics Singapore Pte Ltd. Semiconductor surround gate SRAM storage device
WO2009096001A1 (ja) 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置およびメモリ混載半導体装置、並びにそれらの製造方法
US8158468B2 (en) * 2008-02-15 2012-04-17 Unisantis Electronics Singapore Pte Ltd. Production method for surrounding gate transistor semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156664A (ja) * 1988-12-09 1990-06-15 Toshiba Corp 半導体装置
WO2009096465A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096467A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
WO2009096466A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9275729B2 (en) 2014-01-28 2016-03-01 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2015057857A (ja) * 2014-12-04 2015-03-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
JP2016086183A (ja) * 2016-01-06 2016-05-19 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP2016225641A (ja) * 2016-08-05 2016-12-28 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置
WO2020044560A1 (ja) * 2018-08-31 2020-03-05 株式会社ソシオネクスト 半導体装置及びその製造方法
JPWO2020044560A1 (ja) * 2018-08-31 2021-08-26 株式会社ソシオネクスト 半導体装置及びその製造方法
JP7185149B2 (ja) 2018-08-31 2022-12-07 株式会社ソシオネクスト 半導体装置

Also Published As

Publication number Publication date
TWI412123B (zh) 2013-10-11
EP2299485A1 (en) 2011-03-23
US8507995B2 (en) 2013-08-13
US20110062529A1 (en) 2011-03-17
KR20110030354A (ko) 2011-03-23
TW201112402A (en) 2011-04-01
CN102024818A (zh) 2011-04-20

Similar Documents

Publication Publication Date Title
TWI412123B (zh) 半導體記憶裝置
KR101182025B1 (ko) 반도체 기억장치
JP5524547B2 (ja) 半導体記憶装置
US8154086B2 (en) Semiconductor surround gate SRAM storage device
KR101147582B1 (ko) 반도체 기억 장치와 그 제조방법
CN101933136B (zh) 半导体存储器件
JP4756221B2 (ja) 半導体記憶装置
US8053842B2 (en) Semiconductor storage device
CN101911286B (zh) 半导体存储器件
JP2014099664A (ja) 半導体記憶装置
JP5566697B2 (ja) 半導体記憶装置
WO2013121536A1 (ja) 半導体記憶装置
JP5489272B2 (ja) 半導体記憶装置
WO2013121537A1 (ja) 半導体記憶装置
JPWO2013121536A1 (ja) 半導体記憶装置
JPWO2013121537A1 (ja) 半導体記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110602

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110916

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20110927

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110921

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120301

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120726