TWI406323B - 多區電阻加熱器 - Google Patents

多區電阻加熱器 Download PDF

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TWI406323B
TWI406323B TW095142121A TW95142121A TWI406323B TW I406323 B TWI406323 B TW I406323B TW 095142121 A TW095142121 A TW 095142121A TW 95142121 A TW95142121 A TW 95142121A TW I406323 B TWI406323 B TW I406323B
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heating
heating element
central region
power
base
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TW200723370A (en
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Anqing Cui
Binh Tran
Alexander Tam
Jacob Smith
R Suryanarayanan Iyer
Joseph Yudovsky
Sean M Seutter
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material

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  • Chemical Vapour Deposition (AREA)
  • Control Of Resistance Heating (AREA)
  • Chemical & Material Sciences (AREA)
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Description

多區電阻加熱器
本發明實施例關於電阻式加熱器、結合電阻式加熱器之設備及加熱基材(如半導體晶圓)之方法。
電阻式加熱器(resistive heater)廣泛用於化學氣相沈積系統之加熱系統中。溫度均勻性是化學氣相沈積製程中的重要因素，也因此，現發展出多區(multi－zone)電阻加熱器以提供化學氣相沈積系統中加熱設備的加熱特性。例如，Chen等人美國專利第6,646,235號案(其全文合併於此以供參考)係揭示具有內區域及外區域之化學氣相沈積電阻加熱器，其中外區域完全環繞內區域。藉由提供此等共中心區域，可補償加熱設備之內區域及外區域所呈現不同速度的熱損失，因而在整個晶圓直徑上提供更均勻的熱。
晶圓上溫度均勻性的微小差異，即便是只有幾度，也會傷害化學氣相沈積製程。製造容差上的限制會使其非常難以製造出在整個周圍具有一致加熱功率特性的多區加熱器。因此，在既定半徑下，電阻加熱器的一區域會提供較相同半徑的其他區域更多或更少的加熱功率。所得的溫度差異會導致原須被控制住以確保相同電阻加熱器所有多片晶圓上有製程再現性出現一層複雜性。此外，推定多個相同電阻加熱器表現出不同加熱功率特性時，會導致對製程再現性有害的另一層複雜性。此外，化學氣相沈積處理室本身可能會有許多區域展現溫度均勻性上的不規則，導致進一步的溫度不規則性。
因此，業界亟待提出一種可彌補加熱不規則性之電阻加熱器，以強化高溫沈積系統(例如結合化學氣相沈積處理室之反應器)中的製程再現性。
本發明之態樣係提供關於電阻加熱器之方法、設備及系統。其一態樣係關於包括一座台及一耦接至該座台之軸部的設備。該座台包括一本體，其具有一表面用以支撐晶圓。至少一第一加熱元件係設於該本體中心區域內，額外的加熱元件可設於該中心區域中。而至少兩個其他加熱元件會設於該本體中，每一者部分地環繞該中心區域，且每一者周圍地與另一者鄰近。於一實施例中，僅有一個溫度感應器(如，熱電耦)設於該中心區中，且用於控制所有加熱元件的加熱功率。於另一實施例中，四個加熱元件係設於本體中，其各部分地環繞該中心區域。於另一實施例中，該中心區中的加熱元件係鄰設於該本體之頂側，而其他加熱元件則鄰設至該本體底側。
本發明另一態樣提供一加熱系統，其包括一電阻加熱器、一用於電阻加熱器之溫度感應器、一用於電阻加熱器之電源供應器、以及一控制電源供應器之控制系統。該電阻加熱器具有一座台以及一耦接該座台之軸部。該座台具有一本體，其具有一表面以支撐晶圓。於一或多個實施例中，一第一電阻加熱元件係設於該本體之中心區域內。至少第二及第三電阻加熱元件係設於該本體中，每一者部分環繞該中心區域，且每一者周圍鄰近另一者。該第一、第二及第三加熱元件可提供熱予該基座各個第一、第二及第三區域。該電源供應器包括第一、第二及第三電源，分別提供電源至第一、第二及第三電阻加熱元件。於一實施例中，該控制系統可依據溫度感應器之輸出以及至第二及第三電阻加熱元件之電源的功率比來控制該第一、第二及第三電源。
另一態樣關於在電阻加熱系統中提供製程再現性的方法。加熱表面劃分為一中央區域以及至少兩外部區域，各外部區域僅部分環繞該中央區域。各外部區域相對於中央區域給定各自的功率比。於加熱製程期間測量中央區域的溫度，並依據所測得溫度將加熱功率分配至中央區域。加熱電源依據輸送至中央區域的加熱功率以及各外部區域的各個功率而比輸送至各外部區域。於一實施例中，係實施校準程序以得功率比。
在描述本發明各個例示性實施例之前，應理解本發明並不限於下述結構或製程步驟的細節。本發明亦可以不同方式進行或實施其他實施例。
第1圖呈現化學氣相沈積系統105之截面圖。加熱設備10係設於化學氣相沈積系統105之反應處理室100內。該反應處理室100可支援，例如，化學氣相沈積反應製程、LPCVD反應製程或類似製程，且係由處理室本體110所界及環繞。該加熱設備10包括一基座20以加熱或支撐晶圓，以及一用於支撐該基座20之軸部30，以部分截面圖表示。
如第2圖所示，該基座20具有一本體，其具有一上表面22形成一晶圓座24，用以支撐晶圓。本體21具有一中心區域41，以及環繞該中心區域41的外部區域49。設在中心區域41之上表面22正下方者為一第一電阻加熱器51，以加熱該中心區域或地帶41。應可理解該中心區域或地帶41可以單一加熱器51或多個加熱器進行加熱。
如第3及第6圖所示，本體21具有一底表面26連接至該軸部30。該軸部30設於該中心區域41中心處，且具有一開口32沿該軸部30縱長度延伸。該底表面26之外部區域49劃分為四個大致等尺寸區域42,43,44,45。第二電阻加熱器52加熱區域42；第三電阻加熱器53加熱區域43；第四電阻加熱器54加熱區域44；以及第五電阻加熱器加熱區域45。因此，第二、第三、第四及第五電阻加熱器52－55各部分地環繞該第一電阻加熱器51，而第二、第三、第四及第五電阻加熱器52－55彼此係周圍地鄰近。該第二、第三、第四及第五電阻加熱器52－55各安置於底表面26正下方。然而，於一替代實施例中，該第二、第三、第四及第五電阻加熱器52－55各可設於該上表面22之正下方。同樣的，於一替代實施例中，該第一電阻加熱器51可設於該中心區域41內底表面26之正下方。例如，於一實施例中，該第一電阻加熱器51可設於該中心區域41底表面之正下方，且該第二至第四電阻加熱器52－55可設於該外部區域49中其各自區域42－45上表面22的正下方。第6圖以虛線繪示區域41－45，且基材或晶圓301設於該設備上。
第4圖繪示第2圖中沿線IV－IV的截面圖。該本體21及軸部30可由任一可抵抗高溫以及與化學氣相沈積製程有關之腐蝕材料的適當材料製成，例如氮化鋁、石墨、氮化鋁或熱解(pyrolytic)氮化硼。於一或多個實施例中，介電材料67(例如熱解氮化硼)係設於整個頂表面22以形成晶圓座24，以於其上置放欲處理之晶圓。晶圓座24包括唇部緣69，以確保製程期間晶圓有適當地固定，並位於晶圓座24上良好界定之位置中。第一電阻加熱元件51設於該本體21中，於該介電層69之正下方。第三及第四電阻加熱元件53,55係設於本體21中，即底表面26之正上方。當然，第二及第四電阻加熱元件52,54(未示出)可見於與線IV－IV呈九十度之相同截面中。所有電阻加熱元件51－55可由業界已知的適當材料製成，且最佳應具有與本體21類似之熱膨脹特性。用於電阻加熱元件51－55之適當材料範例包括熱解石墨。各電阻加熱元件51－55具有對應之電源線61－65，穿過軸部30之開口32以提供至該電阻加熱元件51－55的各個電源，並藉以獨立控制分配至內區域41以及至外部區域42－45之各者的加熱電源。當然，一或多個接地線(未示出)也可通過開口32以完成各電阻加熱元件51－55的回路。
熱電耦70可設置以測量中心區域41之溫度。於一實施例中，由底表面26延伸出來的開口74係用以將熱電耦70定位於第一電阻加熱元件51及電阻加熱元件52,53,54以及55之間，藉以將熱電耦70熱耦接該本體21之中心區域41。訊號線72可由熱電耦70延伸通過基座20之開口74，並通過軸部30之開口32以提供與中心區域41有關的溫度資訊予加熱設備10之控制系統。當然，其他溫度感應器配置亦為可能。例如，光高溫計可用以測量中心區域41的溫度。
繪示於第5圖中的控制系統200可用以控制加熱設備10。該控制系統200可為第1圖化學氣相沈積系統105之控制系統的一部份，且電性連接至加熱設備10。加熱設備10及控制系統200兩者一起形成化學氣相沈積系統105的加熱系統。本發明範圍亦涵蓋控制系統200配置的各種可能性，且數位及類比電路的各種排列也可使用以形成控制系統200。任何控制系統200的適當配置都可使用，並提供該領域中熟習技術人士在閱讀下列揭示後可進行例行工作的詳細控制系統200。
依據一實施例，控制系統200包括使用者輸入/輸出系統210、溫度輸入220、反餽控制電路230以及電源供應器240。該使用者輸入/輸出系統210可提供使用者介面，以讓使用者選擇晶圓座22中心區域41的目標溫度211，並選擇分別用於第二、第三、第四及第五電阻加熱器52,53,54,55的第二、第三、第四及第五功率比212,213,214,215。
溫度輸入220係電性連接至熱電耦70的訊號線72，以得到基座20中心區域41的即時電流溫度。該溫度輸入220接著可將此電流溫度221送至反餽控制電路230。與該領域中所用方法類似，該反餽控制電路230可將電流溫度221及目標溫度211接收為輸入，並產生加熱電源控制輸出231。加熱電源控制輸出231的目的係為控制輸入該第一電阻加熱器51的功率，以讓熱電耦70所測的中心區域41溫度能盡可能密切追隨目標溫度211。該反餽控制電路230可設計以利用該領域熟知的任何適當反餽控制方法。
電源供應器240可提供加熱設備10中能獨立啟動電阻加熱元件51,52,53,54,55所需的電力。該電源供應器240包括一第一電源輸出241，電性耦接至該第一電源線61以提供第一加熱元件51之電源，並因此加熱中心區域41。同樣的，電源供應器240包括第二、第三、第四及第五電源輸出242,243,244及245，其各分別電性連接至第二、第三、第四及第五電線62,63,64及65，以加熱第二、第三、第四及第五區域42,43,44及45。
該第一電源輸出241可將來自反餽控制電路230之加熱電源控制輸出231接收為輸入，其可為類比或數位訊號，並於第一電源線61上回應提供對應的電源。因此，藉第一電源輸出241供應至第一電阻加熱器51的電源係直接與該反餽控制電路230所產生的加熱電源控制輸出231有關。
該第二電源輸出242可將來自該反餽控制電路230的加熱電源控制輸出231以及來自使用者輸入/輸出電路210的第二加熱器功率比212接收為輸入。在回應上，該第二電源輸出242可於第二電源線62上提供電源，以使第一電源線61上對第二電源線62上的電源比等於第二加熱器電源比212。因此，由第二電源輸出242供應至第二電阻加熱器52之電源等於第一電源線61上所提供之電源乘以(或除以)第二加熱器功率比212。同樣的，由第三、第四及第五電源輸出243,244及245供應予第三、第四及第五電阻加熱器53,54及55的電源等於第一電源線61上所供應電源分別乘以(或除以)第三、第四或第五加熱器功率比213,214及215。因此，相對於供應至中心區域41之電源來獨立控制供應予區域42,43,44,45之加熱功率便可藉由分別調整功率比212,213,214,215、且因此區域42,43,44及45之加熱特性上的差異可相對於彼此及中心區域41作個別彌補的方式而成為可能。當然，電源供應器240的其他設計也有可能。而無論選擇什麼設計，電源供應器240應依據供應至中心區域41及外部區域42－45之各個功率比212－215來獨立控制各外部區域42－45的加熱功率。
藉由將基座20的外部區域49劃分為數個環繞中心區域41的區域42－45，以及藉由進一步相對於供應至中心區域41之加熱電源來提供此等外部區域42－45各個加熱器功率比212－215的方式，即時加熱系統便可能彌補不同加熱設備10其加熱特性上的差異，並進一步彌補化學氣相沈積處理室100本身加熱特性上的差異。藉由提供加熱功率比212－215適當數值，也可在整個晶圓座24上提供持續加熱，而強化製程再現性。
可對特定化學氣相沈積處理室100內各個加熱設備10實施校準程序，以判定所欲目標溫度211處的適當加熱器功率比212－215。關於第1－6圖，進行此方式的可能方法係將所有加熱器功率比212－215最初設定在數個隱含值(例如1.0)、或由最早的校準步驟取得的數值。接著，測試晶圓301可放置於加熱設備10的晶圓座24上，且中心區域41可加熱至所欲目標溫度211。隨後，可於晶圓301上外部區域42－45之各者中進行獨立溫度測量，例如，藉由使用接附至各區域42－45之熱電耦、或一或多個的高溫計。藉由使用者輸入/輸出電路210，加熱器功率比212－215可接著作調整，同時反餽控制電路230可將中心區域41維持在目標溫度211，直至整個晶圓301達加熱模式，以盡可能為所欲製程達到最佳化。所得加熱器電源功率212－215可隨後以目標溫度211使用於生產上。
當然，加熱器功率比212－215不需固定數值。相反的，加熱器功率比212－215可隨著目標溫度作函數上的變化，且因此，整個校準程序可包含一系列在預定溫度上的獨立校準步驟，以於此等預定溫度之每一者處得數組加熱器功率比212－215。可接著使用插補(interpolation)的方式來判定在預定溫度間目標溫度211處的加熱器功率比212－215。
應可理解的是，用於控制加熱設備10之控制系統可包含數個溫度感應器。各溫度感應器可測量單一區域或基座區域的溫度。該溫度感應器可包括數個熱電耦、高溫計或其他適當溫度感應裝置。不同類型溫度感應器的結合也可使用。
雖然此處所述發明已參照特定實施例描述，但應可理解的是此等實施例僅說明本發明範例及應用。該等熟習此項技術人士應可輕易瞭解對於本發明方法、設備及系統的不同潤飾及變化也可在不背離發明精神及範圍下提出。例如，該基座本體之外部區域可不僅劃分為四個區域，而是任何多於一個以上的區域數目。於特定實施例中，此等區域之各者應可提供其各自的加熱功率比。同樣的，各個加熱器區域可彼此重疊。不同加熱元件可位於上表面、底表面或內嵌於基座本體中。區域溫度測量可藉由利用多個溫度測量裝置(熱電耦、高溫計等)來進行。因此，本發明亦包含附加申請專利範圍內及其均等物之潤飾及變化。
10．．．加熱設備
20．．．加熱設備之基座
21．．．加熱設備之本體
22．．．本體頂表面
24．．．加熱設備之晶圓座
26．．．本體底表面
30．．．加熱設備之軸部
32．．．通過軸部之開口
41．．．本體中心區域
42．．．本體外部區域
43．．．本體外部區域
44．．．本體外部區域
45．．．本體外部區域
49．．．本體外部區域
51．．．第一電阻加熱元件
52．．．第二電阻加熱元件
53．．．第三電阻加熱元件
54．．．第四電阻加熱元件
55．．．第五電阻加熱元件
61．．．第一電阻加熱元件之電源線
62．．．第二電阻加熱元件之電源線
63．．．第三電阻加熱元件之電源線
64．．．第四電阻加熱元件之電源線
65．．．第五電阻加熱元件之電源線
67．．．介電層
69．．．晶圓座唇部緣
70．．．熱電耦
72．．．熱電耦訊號線
74．．．通過加熱設備基座之開口
100．．．反應處理室
105．．．CVD系統
110．．．處理室本體
200．．．加熱設備控制系統
210．．．使用者輸入/輸出系統
211．．．目標溫度
212．．．第二功率比
213．．．第三功率比
214．．．第四功率比
215．．．第五功率比
220．．．溫度輸入
221．．．電流溫度
230．．．反餽控制電路
231．．．加熱電源控制輸出
240．．．電源供應器
241．．．第一電源輸出
242．．．第二電源輸出
243．．．第三電源輸出
244．．．第四電源輸出
245．．．第五電源輸出
301．．．測試晶圓
第1圖係顯示具有本發明一實施例之加熱設備的化學氣相沈積系統截面圖；第2圖為第1圖加熱設備之頂部概要圖；第3圖為第1圖加熱設備之底部概要圖；第4圖為第1圖加熱設備之部分截面圖；第5圖繪示第1圖加熱設備之控制系統；第6圖為第1圖加熱設備之頂部概要圖，繪示其上置有一基材，且該設備之加熱區域係以虛線表示。
10．．．加熱設備
20．．．加熱設備之基座
21．．．加熱設備之本體
22．．．本體頂表面
24．．．加熱設備之晶圓座
26．．．本體底表面
30．．．加熱設備之軸部
32．．．通過軸部之開口
41．．．本體中心區域
42．．．本體外部區域
43．．．本體外部區域
44．．．本體外部區域
45．．．本體外部區域
49．．．本體外部區域
51．．．第一電阻加熱元件
52．．．第二電阻加熱元件
53．．．第三電阻加熱元件
54．．．第四電阻加熱元件
55．．．第五電阻加熱元件

Claims (17)

  1. 一種用於電阻加熱基材之設備，至少包含：一基座，該基座包含一本體、一頂表面及一對側的底表面，該頂表面具有一區域以支撐一基材；一軸部，該軸部耦接至該基座；一第一加熱元件，該第一加熱元件設於該基座之該本體之一中心區域內；第二、第三、第四及第五加熱元件，該等加熱元件設於該基座之該本體內，該第二、第三、第四及第五加熱元件之每一者部分地環繞該第一加熱元件，且其中該第二、第三、第四及第五加熱元件係彼此周圍鄰近；其中該第一加熱元件係位於該本體之該頂表面或底表面上，而該第二、第三、第四及第五加熱元件係位於該本體之另一表面上，且介電材料係遍佈於該頂表面上以形成一晶圓座；以及唇部緣，以確保製程期間一晶圓有適當地固定並位於該晶圓座上界定之位置中。
  2. 如申請專利範圍第1項所述之設備，更包含僅一溫度測量裝置，該溫度測量裝置可熱耦接至該本體之該中心區域。
  3. 如申請專利範圍第1項所述之設備，其中該第二、第 三、第四及第五加熱元件大致界定周圍鄰近四分之一圓(quadrants)，以分別部分地環繞該第一加熱元件。
  4. 如申請專利範圍第3項所述之設備，其中該第一加熱元件係設置於鄰近該本體之該頂表面或底表面，而該第二、第三、第四及第五加熱元件係設置於鄰近該本體的另一表面。
  5. 如申請專利範圍第1項所述之設備，其中該基座係由適於抵抗超過溫度至少約750℃之材料組成。
  6. 如申請專利範圍第5項所述之設備，其中該基座包含氮化鋁。
  7. 一種結合申請專利範圍第1項設備之反應器，其中該反應器包括一處理室，該處理室用於在基材上形成薄膜，且該設備係位於該處理室中。
  8. 一種結合申請專利範圍第4項設備之反應器，其中該反應器包括一處理室，該處理室用於在基材上形成薄膜，且該設備係位於該處理室中。
  9. 一種用於化學氣相沈積設備之加熱系統，至少包含： 一電阻加熱器，該電阻加熱器包括一本體及一基座，該基座具有一頂表面及一對側的底表面，該頂表面具有一區域以支撐一基材；一軸部，該軸部耦接至該基座；一第一加熱元件，該第一加熱元件設於該基座之本體之一中心區域內，以加熱該基座之一第一區域；以及第二、第三、第四及第五加熱元件，該等加熱元件設於該基座之本體內以分別加熱該基座之第二、第三、第四及第五區域，該第二、第三、第四及第五加熱元件之每一者部分地環繞該第一加熱元件，且其中該第二、第三、第四及第五加熱元件係周圍地彼此鄰近；一溫度感應器，該溫度感應器用於測量該基座之該中心區域之溫度；至少第一、第二、第三、第四及第五電源，該等電源用以分別提供電源至該第一、第二、第三、第四及第五加熱元件；一控制系統，該控制系統用於控制該第一、第二、第三、第四及第五電源；其中該第一加熱元件係位於該本體之該頂表面或底表面上，而該第二、第三、第四及第五加熱元件係位於該本體之另一表面上，且介電材料係遍佈於該頂表面上以形成一晶圓座；以及唇部緣，以確保製程期間一晶圓有適當地固定並位於該晶圓座上界定之位置中。
  10. 如申請專利範圍第9項所述之加熱系統，其中該第二、第三、第四及第五加熱元件大致界定周圍鄰近四分之一圓，以分別部分地環繞該第一加熱元件，且至少第四及第五電源係由該控制系統控制，以分別提供電源予該至少第四及第五加熱元件。
  11. 如申請專利範圍第10項所述之加熱系統，其中該第一加熱元件係設置於該電阻加熱器之本體之該頂表面或底表面鄰近處，而該第二、第三、第四及第五加熱元件係設置於該電阻加熱器之本體之另一表面的鄰近處。
  12. 如申請專利範圍第9項所述之加熱系統，其中該溫度感應器為一熱電耦，該熱電耦係設於該基座之本體之該中心區域內，該熱電耦具有至少一引線(lead)延伸通過該軸部。
  13. 如申請專利範圍第9項所述之加熱系統，更包括至少第二及第三溫度感應器，用以測量該第二及第三區域之各別溫度。
  14. 如申請專利範圍第13項所述之加熱系統，其中至少一溫度感應器包括一熱電耦。
  15. 一種用於電阻加熱基材之方法，至少包含以下步驟：將一電阻加熱元件之一部分劃分為一中心區域以及至少四個外部區域，各外部區域僅部分環繞該中心區域；相對於該中心區域提供各外部區域各自之功率比；僅測量該中心區域之溫度；依據所測得的溫度，提供加熱電源至該中心區域；以及依據分配至該中心區域之加熱功率以及該等外部區域之各自功率比，提供分配至各外部區域之加熱電源；以及其中該加熱元件具有一頂表面及一對側的底表面，且該中心區域或四個外部區域二者中至少一者係位於該頂表面上，而該中心區域或四個外部區域二者中之一者係位於該底表面上，且介電材料係遍佈於該頂表面上以形成一晶圓座；及唇部緣係配置以確保製程期間一晶圓有適當地固定並位於該晶圓座上界定之位置中。
  16. 如申請專利範圍第15項所述之方法，更包括實施一校準程序以得到該等功率比之步驟。
  17. 如申請專利範圍第15項所述之方法，其中各外部區域 係周圍地鄰近另一外部區域。
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