TWI388896B - 附有觸控面板之顯示裝置 - Google Patents

附有觸控面板之顯示裝置 Download PDF

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TWI388896B
TWI388896B TW98113171A TW98113171A TWI388896B TW I388896 B TWI388896 B TW I388896B TW 98113171 A TW98113171 A TW 98113171A TW 98113171 A TW98113171 A TW 98113171A TW I388896 B TWI388896 B TW I388896B
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electrodes
electrode
touch panel
display device
insulating film
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TW200944874A (en
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Masahiro Teramoto
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Hitachi Displays Ltd
Panasonic Liquid Crystal Displ
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    • GPHYSICS
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    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/033Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor
    • G06F3/0354Pointing devices displaced or positioned by the user, e.g. mice, trackballs, pens or joysticks; Accessories therefor with detection of 2D relative movements between the device, or an operating part thereof, and a plane or surface, e.g. 2D mice, trackballs, pens or pucks
    • G06F3/03547Touch pads, in which fingers can move on a surface
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
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    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
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    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/047Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/0206Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425Making electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0405Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
    • H01L21/0425Making electrodes
    • H01L21/044Conductor-insulator-semiconductor electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
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    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

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Description

附有觸控面板之顯示裝置
本發明係關於附有觸控面板之顯示裝置,特別是關於具備靜電電容結合方式的觸控面板之附有觸控面板之顯示裝置。
作為觸控面板之主要方式,已知有檢測光的變化的方式,與檢測電氣特性的變化的方式。此外,作為檢測電氣特性的變化的方式,已知有靜電電容結合方式(參照日本特開2008-65748號公報,日本特開2009-015489號公報)。
圖9製圖11係相關於從前的靜電電容結合方式的觸控面板之圖,圖9係顯示電極圖案之平面圖,圖10係顯示沿著圖9之X-X線的剖面構造之剖面圖,圖11係顯示沿著圖9之XI-XI線之剖面構造之剖面圖。
從前之靜電電容結合方式之觸控面板,如圖9至圖11所示,延伸於第1方向(例如X方向),具有併設於與前述第1方向交叉的第2方向(例如Y方向)之複數電極1X,及與此電極1X交叉而沿伸於前述第2方向,被併設於前述第1方向的複數電極2Y。複數之電極1X被配置於基板11上,以被形成於其上層的絕緣膜12覆蓋。複數之電極2Y,被配置於絕緣膜12上,以被形成於其上層的保護膜13覆蓋。電極1X以及2Y例如係形成以ITO(銦錫 氧化物,Indium Tin Oxide)等透明導電性材料。
在從前的靜電電容結合方式之觸控面板,如圖9至圖11所示,複數之電極1X與複數之電極2Y中介著絕緣膜12分別被形成為不同的導電層(下層與上層)。這種電極構造的場合,被形成於絕緣膜12及上層的電極1X上的保護膜13,因為會因上層的電極1X而在膜上產生應變,而且,對於反射光而言下層與上層之光徑長相異,所以上層電極1X與下層電極2Y會產生色差,使得電極1X及電極2Y之電極圖案顯著化。如此之電極圖案的顯著化,會招致光學特性的惡化,成為引起組入觸控面板的顯示裝置的特性降低的重要原因,所以必須採取對策。
本發明之目的在於提供可以抑制附有觸控面板之顯示裝置的特性降低之技術。
本發明之前述以及其他目的與新穎的特徵,將藉由本說明書的記載於附圖進行說明。
於本申請案所揭示的發明之中,簡單說明具有代表性者之概要如下。
(1)附有觸控面板的顯示裝置,具備:顯示面板、及被配置於前述顯示面板的觀察者側之面上的靜電電容結合方式之觸控面板;前述觸控面板,於基板上,具有延伸於第1方向,被併設於與前述第1方向交叉的第2方向之複數第1電極,及與前述第1電極交叉延伸於前述第2方向,被併設於前述第1方向的複數第2電極;前述複數之第1電極之各個,具有:被形成於與前述第2電極不同之層,而與前述第2電極交叉的第1部分,及與前述第2電極分離而被形成於同層的第2部分;前述第1部分,透過被形成於前述第1部分與前述第2電極之間的絕緣膜的接觸孔被連接於前述第2部分。
(2)係如前述(1),前述第1電極之前述第1部分,被形成於比前述第2電極更上層。
(3)係如前述(1),前述第1電極之前述第1部分,被形成於比前述第2電極更下層。
(4)係如前述(1)至(3)之任一,前述第2電極,於前述第1電極間具有比與前述第1電極交叉的部分的寬幅更寬寬幅的部分,前述第1電極,於前述第2電極間具有比與前述第2電極交叉的部分的寬幅更寬寬幅的部分。
(5)如前述(1)至(4)之任一,前述第1及第2電極,係由透明導電性材料所構成。
(6)如前述()至(5)之任一,前述基板上具有以覆蓋前述第1及第2電極的方式形成的保護膜。
於本申請案所揭示的發明之中,簡單說明藉由具有代表性者所可得到的效果如下。
根據本發明,可以抑制附有觸控面板之顯示裝置的特性降低。
以下,參照圖面詳細說明本發明之實施例。又,於供說明發明的實施例之所有圖面,對具有相同功能者賦予同一符號,省略其重複說明。
[實施例1]
在本實施例1,說明作為顯示面板之一例之例如在液晶顯示面板上具備觸控面板之附有觸控面板的顯示裝置上適用本發明之例。
圖1至圖5係相關於本發明之實施例1之附有觸控面板的顯示裝置之圖,圖1係顯示被組入附有觸控面板的顯示裝置之觸控面板的電極圖案之平面圖,圖2係擴大圖1之一部分之平面圖,圖3係顯示沿著圖1之Ⅲ-Ⅲ線的剖面構造之剖面圖,圖4係顯示沿著圖1之Ⅳ-Ⅳ線的剖面構造之剖面圖,圖5係顯示附有觸控面板的顯示裝置之概略構成之方塊圖。
又,於圖5,觸控面板20,顯示沿著圖1之V-V線之剖面構造。
本實施例1之附有觸控面板的顯示裝置,如圖5所示,具備:液晶顯示面板30、被配置於液晶顯示面板30的觀察者側之面上的靜電電容結合方式之觸控面板20、被配置於與液晶顯示面板30之觀察者側為相反側之面下的背光40。作為液晶顯示面板30,例如使用IPS方式、TN方式、VA方式等液晶顯示面板。
觸控面板20,如圖1至圖4所示,具有延伸於第1方向(例如X方向),以特定之排列間距併設於與前述第1方向交叉的第2方向(例如Y方向)之複數電極1X,及與此電極1X交叉而沿伸於前述第2方向,以特定的排列間距併設於前述第1方向的複數電極2Y。
複數電極2Y之各個,係以第1部分2a、寬幅比此第1部分2a的寬幅更寬的第2部分2b在前述第2方向上交互被複數配置的電極圖案來形成的。複數之電極2Y之各個,被配置於基板11之觀察者側之面上,以被形成於其上層的絕緣膜12覆蓋。作為基板11,使用例如玻璃等透明的絕緣性基板。
複數電極1X之各個,係以第1部分1a、寬幅比此第1部分1a的寬幅更寬的第2部分1b在前述第1方向上交互被複數配置的電極圖案來形成的。複數之電極1X之各個的第1部分1a,被形成於與電極2Y不同的導電層,與電極2Y之第1部分2a平面交叉。複數電極1X之各個之第2部分1b,被形成於與電極2Y同層之導電層而與電極2Y分離。於本實施例,電極1X之第1部分1a,被形成於比電極2Y更為上層。
複數電極1X之各個的第2部分1b,與電極2Y同樣以絕緣膜12覆蓋。複數之電極1X之各個的第1部分1a,被配置於絕緣膜12上,以被形成於其上層的保護膜13覆蓋。
電極1X之第1部分1a,與電極2Y之第1部分2a平面交叉,於夾著此第1部分2a相鄰的2個第2部分1b,中介著被形成於電極1X的第1部分1a與電極2Y之間的層間絕緣膜之絕緣膜12上的接觸孔12a分別被導電而且機械性地連接。
亦即,複數電極1X之各個,具有被形成於與電極2Y不同的導電層,與電極2Y交叉的第1部分1a,及與電極2Y分離而被形成於與電極2Y同層的導電層的第2部分1b;電極1X的第1部分1a,中介著被形成於此第1部分1a與電極2Y之間的絕緣膜12的接觸孔12a而被連接至電極1X的第2部分1b。
電極2Y之第2部分2b,於相鄰的2個電極1X,平面俯視時,被配置於各個第1部分1a之間。電極1X之第2部分1b,於相鄰的2個電極2Y,平面俯視時,被配置於各個第1部分2a之間。
亦即,電極2Y,具有比電極1X間與電極1X交叉的部分的寬幅還要寬的部分,電極1X,具有比電極2Y間與電極2Y交叉的部分的寬幅還要寬的部分。
又,電極1X以及電極2Y係具有高透過性的材料,例如ITO(銦錫氧化物,Indium Tin Oxide)等透明導電性材料所形成。
又,在圖5,模式顯示觀察者的手指50與電極1X之間被形成C1,C3之電容,觀察者的手指50與電極2Y之間被形成C2之電容。本實施例之觸控面板20,檢測出電極1X與電極2Y之結合電容的電容差,而檢測出觀察者的手指50所觸碰的,觸控面板20的觸碰面內之觸碰位置座標。
其次,參照圖1至圖4說明本實施例之觸控面板20之製造方法。
首先,於基板11的觀察者側之面上,形成由透明導電性材料(例如ITO)所構成的第1導電膜。
其次,例如使用正型光阻在前述第1導電膜上形成電極圖案之第1遮罩,其後,將前述遞1遮罩作為蝕刻遮罩使用,藉由蝕刻前述第1導電膜,在基板11上形成電極2Y以及電極1X的第2部分1b。
其次,除去前述第1遮罩,其後,在包含電極2Y以及電極1X的第2部分1b的基板11上,形成例如由負型光阻所構成的絕緣膜12。於此步驟,電極2Y以及電極1X之第2部分1b係以絕緣膜12覆蓋。
其次,於絕緣膜12的必要部分形成接觸孔12a,其後,於包含接觸孔12a內的絕緣膜12上,形成由透明導電性材料(例如ITO)所構成的第2導電膜。
其次,例如使用正型光阻在前述第2導電膜上形成電極圖案之第2遮罩,其後,將前述遞2遮罩作為蝕刻遮罩使用,藉由蝕刻前述第1導電膜,在絕緣膜12上形成電極1X的第1部分1a。於此步驟,上層之第1部分1a,透過接觸孔12a與下層之第2部分1b導電地而且機械地連接。此外,上層之第1部分1a,與下層的電極2Y之第1部分1a交叉。
其次,除去前述第2遮罩,其後,於包含電極1X的第1部分1a上的絕緣膜12上,藉由形成例如由負型光阻所構成的保護膜,成為圖1至圖4所示的構造。於此步驟,電極1X的第1部分1a係以保護膜13覆蓋。
又,周邊配線圖案的形成,可以在前述各步驟之間適切的地方插入。
然而,在從前的靜電電容結合方式之觸控面板,如圖9至圖11所示,複數之電極1X與複數之電極2Y中介著絕緣膜12分別被形成為不同的導電層(下層與上層)。這種電極構造的場合,被形成於絕緣膜12及上層的電極1X上的保護膜13,因為會因上層的電極1X而在膜上產生應變,而且,對於反射光而言下層與上層之光徑長相異,所以下層電極2Y與上層電極1X會產生色差,使得電極1X及電極2Y之電極圖案顯著化。
對此,本實施例之靜電電容結合方式之觸控面板20,如圖1至圖4所示,電極1X,具有與電極2Y不同層上與電極2Y交叉的方式形成的第1部分1a,及與電極2Y同層而分離而形成的第2部分1b;第1部分1a,中介著被形成於第1部分1a與電極2Y之間的絕緣膜12的接觸孔12a而被連接至第2部分1b。
這樣的電極構造的場合,因為可對保護膜13形成均勻的成膜面,可以抑制產生於保護膜13的應變(strain),可以抑制由於保護膜13的應變導致色差所產生的電極圖案的明顯化。結果,可以抑制由於電極圖案的明顯化導致光學特性的惡化,因此可抑制被組入觸控面板20的顯示裝置之特性降低。
此外,色差產生的部分可以最小化,亦即僅限於電極1X的第1部分1a,所以也可抑制光徑差導致色差所產生的電極圖案的顯著化。結果,可以抑制由於電極圖案的明顯化導致光學特性的惡化,因此可抑制被組入觸控面板20的顯示裝置之特性降低。
此外,在形成於上層的第1部分1a(架橋部分)產生缺陷的場合,只要再次實施形成第1部分1a的步驟就可以修補,可以抑制電極圖案的顯著化導致光學特性的惡化而謀求加工性的提高。
[實施例2]
圖6至圖8係相關於本發明之實施例2之附有觸控面板的顯示裝置之圖,圖6係顯示被組入附有觸控面板的顯示裝置之觸控面板的電極圖案之平面圖,圖7係顯示沿著圖6之Ⅶ-Ⅶ線的剖面構造之剖面圖,圖8係顯示沿著圖6之Ⅷ-Ⅷ線的剖面構造之剖面圖。
本實施例2之附有觸控面板的顯示裝置,基本上係與前述實施例1同樣的構成,但以下的構成有所不同。
亦即,在前述的實施例1,如圖1至圖4所示,係於下層之導電層被形成電極2Y以及電極1X之第2部分1b,在比其更為上層的導電層形成電極1X的第1部分1a之例來進行說明,但在本實施例2,如圖6至圖8所示,在下層的導電層被形成電極1X之第1部分1a,在比其更為上層的導電層形成電極2Y以及電極1X的第2部分1b。
電極1X之第1部分1a(在本實施例為下層),與電極2Y之第1部分2a平面交叉,於夾著此第1部分2a相鄰的2個第2部分1b(在本實施例為上層),中介著被形成於電極1X的第1部分1a與電極2Y之間的層間絕緣膜之絕緣膜12上的接觸孔12a分別被導電而且機械性地連接。
於本實施例2,也可以抑制由保護膜13的應變導致色差所產生的電極圖案的顯著化,以及光徑差導致色差所產生的電極圖案的顯著化,所以可抑制電極圖案的顯著化所導致的光學特性惡化,可以抑制組入觸控面板20的顯示裝置的特性降低。
又,在前述實施例中作為顯示面板之一例針對在液晶顯示面板上具備觸控面板的附有觸控面板的顯示裝置加以說明,但本發明並不以此為限,也可以適用於在有機電致發光(EL)顯示面板或無機EL顯示面板等其他顯示面板上具備觸控面板之附有觸控面板的顯示裝置。
以上,根據前述實施例具體說明本案發明人所完成之發明,但是本發明並不以前述實施例為限,在不逸脫其要旨的範圍內可進行種種變形。
1X...電極
1a...第1部分
1b...第2部分
2Y...電極
2a...第1部分
2b...第2部分
11...基板
12...絕緣膜
12a...接觸孔
13...保護膜
20...觸控面板
30...液晶顯示面板
40...背光
圖1係顯示被組入本發明之實施例1之附有觸控面板的顯示裝置之觸控面板的電極圖案之平面圖。
圖2係擴大圖1之一部分之平面圖。
圖3係顯示沿著圖1之Ⅲ-Ⅲ線的剖面構造之剖面圖。
圖4係顯示沿著圖1之Ⅳ-Ⅳ線的剖面構造之剖面圖。
圖5係顯示本發明之實施例1之附有觸控面板的顯示裝置的概略構成之方塊圖。
圖6係顯示被組入本發明之實施例2之附有觸控面板的顯示裝置之觸控面板的電極圖案之平面圖。
圖7係顯示沿著圖6之Ⅶ-Ⅶ線的剖面構造之剖面圖。
圖8係顯示沿著圖6之Ⅷ-Ⅷ線的剖面構造之剖面圖。
圖9係顯示從前的靜電電容結合方式之觸控面板的電極圖案之平面圖。
圖10係顯示沿著圖9之X-X線的剖面構造之剖面圖。
圖11係顯示沿著圖9之XI-XI線的剖面構造之剖面圖。
1X...電極
1a...第1部分
1b...第2部分
2Y...電極
2a...第1部分
2b...第2部分

Claims (5)

  1. 一種附有觸控面板的顯示裝置,其特徵為具備:顯示面板、及被配置於前述顯示面板的觀察者側之面上的靜電電容結合方式之觸控面板;前述觸控面板具有:基板、於前述基板上延伸於第1方向而被併設於與前述第1方向交叉的第2方向之複數第1電極、及與前述複數之第1電極立體交叉而延伸於前述第2方向被併設於前述第1方向的複數第2電極;前述複數之第1電極之各個,具有:被形成於與前述複數第2電極不同之層,而與前述複數第2電極之一立體交叉的第1部分,及與前述複數第2電極同層而與前述複數第2電極分離而被形成的第2部分;前述第1部分,透過被形成於前述第1部分與前述複數第2電極之間的絕緣膜的接觸孔被導電地連接於前述第2部分;保護膜,係於前述基板上以覆蓋前述複數第1電極及前述複數第2電極的方式形成;前述絕緣膜與前述保護膜,係由負型光阻構成;前述保護膜,也被形成於前述接觸孔內。
  2. 如申請專利範圍第1項之附有觸控面板的顯示裝置,其中 前述第1部份,被形成於比前述複數第2電極更為上層。
  3. 如申請專利範圍第1項之附有觸控面板的顯示裝置,其中前述第1部份,被形成於比前述複數第2電極更為下層。
  4. 如申請專利範圍第1至3項之任一項之附有觸控面板的顯示裝置,其中前述複數第2電極之各個,在彼此相鄰的前述第1電極之間,具有比與前述第1部份立體交叉的部分的寬幅更寬寬幅之部分,前述複數第1電極之各個,在彼此相鄰的前述第2電極之間,以比與前述第1部份的寬幅更寬寬幅的方式具有前述第2部分。
  5. 如申請專利範圍第1至3項之任一項之附有觸控面板的顯示裝置,其中前述複數第1電極與前述複數第2電極,係由透明導電性材料所構成。
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