KR20090111783A - 터치 패널을 갖는 표시 장치 - Google Patents
터치 패널을 갖는 표시 장치 Download PDFInfo
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- KR20090111783A KR20090111783A KR20090034581A KR20090034581A KR20090111783A KR 20090111783 A KR20090111783 A KR 20090111783A KR 20090034581 A KR20090034581 A KR 20090034581A KR 20090034581 A KR20090034581 A KR 20090034581A KR 20090111783 A KR20090111783 A KR 20090111783A
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G06F3/047—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means using sets of wires, e.g. crossed wires
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- H—ELECTRICITY
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- H01L21/044—Conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
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- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- Condensed Matter Physics & Semiconductors (AREA)
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- Mathematical Physics (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Position Input By Displaying (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (6)
- 표시 패널과,상기 표시 패널의, 관찰측의 면 상에 배치되는 정전 용량 결합 방식의 터치 패널을 포함하고,상기 터치 패널은, 기판과, 상기 기판 상에 제1 방향으로 연장되며 상기 제1 방향과 교차하는 제2 방향으로 병설되는 복수의 제1 전극과, 상기 복수의 제1 전극과 입체 교차하여 상기 제2 방향으로 연장되며 상기 제1 방향으로 병설되는 복수의 제2 전극을 갖고,상기 복수의 제1 전극의 각각은, 상기 복수의 제2 전극과는 상이한 층에 형성되며 상기 복수의 제2 전극의 하나와 입체 교차하는 제1 부분과, 상기 복수의 제2 전극과 동층에 상기 복수의 제2 전극과는 분리되어 형성되는 제2 부분을 갖고,상기 제1 부분은, 상기 제1 부분과 상기 복수의 제2 전극 사이의 절연막에 형성된 컨택트홀을 통하여 상기 제2 부분에 전기적으로 접속되어 있는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
- 제1항에 있어서,상기 제1 부분은, 상기 복수의 제2 전극보다도 상층에 형성되어 있는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
- 제1항에 있어서,상기 제1 부분은, 상기 복수의 제2 전극보다도 하층에 형성되어 있는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 복수의 제2 전극의 각각은, 이웃끼리의 상기 제1 전극 사이에, 상기 제1 부분과 입체 교차하는 부분의 폭보다도 넓은 폭의 부분을 갖고,상기 복수의 제1 전극의 각각은, 이웃끼리의 상기 제2 전극 사이에, 상기 제1 부분의 폭보다도 넓은 폭으로 되도록, 상기 제2 부분을 갖는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 복수의 제1 전극 및 상기 복수의 제2 전극은, 투명 도전성 재료로 이루어지는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 기판 상에 상기 복수의 제1 전극 및 상기 복수의 제2 전극을 덮도록 하여 형성되는 보호막을 더 갖는 것을 특징으로 하는 터치 패널을 갖는 표시 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2008111414A JP2009265748A (ja) | 2008-04-22 | 2008-04-22 | タッチパネル付き表示装置 |
JPJP-P-2008-111414 | 2008-04-22 |
Publications (2)
Publication Number | Publication Date |
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KR20090111783A true KR20090111783A (ko) | 2009-10-27 |
KR101050900B1 KR101050900B1 (ko) | 2011-07-20 |
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Application Number | Title | Priority Date | Filing Date |
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KR20090034581A KR101050900B1 (ko) | 2008-04-22 | 2009-04-21 | 터치 패널을 갖는 표시 장치 |
Country Status (6)
Country | Link |
---|---|
US (8) | US8436830B2 (ko) |
EP (2) | EP3333686A1 (ko) |
JP (1) | JP2009265748A (ko) |
KR (1) | KR101050900B1 (ko) |
CN (2) | CN101566750A (ko) |
TW (1) | TWI388896B (ko) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20110061746A (ko) * | 2009-12-02 | 2011-06-10 | 엘지디스플레이 주식회사 | 터치패널 일체형 액정 표시 장치 |
KR101048918B1 (ko) * | 2010-04-28 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 터치 스크린 패널 및 이를 구비한 영상표시장치 |
WO2012177032A2 (ko) * | 2011-06-20 | 2012-12-27 | 주식회사 티메이 | 정전용량 터치 패널의 제조 방법 및 이에 의해 제조되는 터치 패널 |
KR101322981B1 (ko) * | 2009-12-01 | 2013-10-29 | 엘지디스플레이 주식회사 | 터치 소자를 구비한 표시장치 |
KR101351415B1 (ko) * | 2009-12-09 | 2014-01-16 | 엘지디스플레이 주식회사 | 터치 패널 및 터치 패널 일체형 액정 표시 장치 |
KR101397250B1 (ko) * | 2010-12-30 | 2014-05-20 | 하이디스 테크놀로지 주식회사 | 정전 용량 터치 패널 및 그 제조 방법 |
US8773371B2 (en) | 2010-03-16 | 2014-07-08 | Samsung Display Co., Ltd. | Flat panel display with a touch screen panel |
KR101426303B1 (ko) * | 2013-02-20 | 2014-08-05 | 주식회사 하이딥 | 터치 센서 패널 |
KR101450248B1 (ko) * | 2014-04-16 | 2014-10-15 | 에스맥 (주) | 전기적 특성이 향상된 터치 스크린 패널 |
KR101469653B1 (ko) * | 2013-02-28 | 2014-12-05 | 이성규 | 터치 스크린 패널 및 그 제조방법 |
KR101478043B1 (ko) * | 2013-04-24 | 2015-01-02 | 일진디스플레이(주) | 터치 패널 및 그 제조 방법 |
US8970509B2 (en) | 2009-12-09 | 2015-03-03 | Lg Display Co., Ltd. | Touch panel and liquid crystal display device including the same |
US9001052B2 (en) | 2010-03-16 | 2015-04-07 | Samsung Display Co., Ltd. | Touch screen panel and fabrication method thereof |
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CN101382651B (zh) * | 2007-09-07 | 2011-12-14 | 群康科技(深圳)有限公司 | 触控式电润湿显示装置、触控式电路基板及其制造方法 |
JP2009265748A (ja) * | 2008-04-22 | 2009-11-12 | Hitachi Displays Ltd | タッチパネル付き表示装置 |
JP5178379B2 (ja) | 2008-07-31 | 2013-04-10 | 株式会社ジャパンディスプレイイースト | 表示装置 |
JP5423004B2 (ja) * | 2009-01-08 | 2014-02-19 | 東レ株式会社 | ネガ型感光性樹脂組成物およびそれを用いたタッチパネル用材料 |
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WO2012177032A2 (ko) * | 2011-06-20 | 2012-12-27 | 주식회사 티메이 | 정전용량 터치 패널의 제조 방법 및 이에 의해 제조되는 터치 패널 |
KR101426303B1 (ko) * | 2013-02-20 | 2014-08-05 | 주식회사 하이딥 | 터치 센서 패널 |
KR101469653B1 (ko) * | 2013-02-28 | 2014-12-05 | 이성규 | 터치 스크린 패널 및 그 제조방법 |
KR101478043B1 (ko) * | 2013-04-24 | 2015-01-02 | 일진디스플레이(주) | 터치 패널 및 그 제조 방법 |
KR101450248B1 (ko) * | 2014-04-16 | 2014-10-15 | 에스맥 (주) | 전기적 특성이 향상된 터치 스크린 패널 |
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US9952710B2 (en) | 2018-04-24 |
US20130194233A1 (en) | 2013-08-01 |
KR101050900B1 (ko) | 2011-07-20 |
US20160162109A1 (en) | 2016-06-09 |
US8436830B2 (en) | 2013-05-07 |
US20090262096A1 (en) | 2009-10-22 |
JP2009265748A (ja) | 2009-11-12 |
US10168828B2 (en) | 2019-01-01 |
US10719166B2 (en) | 2020-07-21 |
EP3333686A1 (en) | 2018-06-13 |
CN102622122B (zh) | 2015-11-18 |
US20140139485A1 (en) | 2014-05-22 |
US8941616B2 (en) | 2015-01-27 |
TW200944874A (en) | 2009-11-01 |
US9292147B2 (en) | 2016-03-22 |
TWI388896B (zh) | 2013-03-11 |
US20200319745A1 (en) | 2020-10-08 |
CN101566750A (zh) | 2009-10-28 |
US20190095038A1 (en) | 2019-03-28 |
US20150122771A1 (en) | 2015-05-07 |
US20180203563A1 (en) | 2018-07-19 |
EP2112574A1 (en) | 2009-10-28 |
US8643627B2 (en) | 2014-02-04 |
CN102622122A (zh) | 2012-08-01 |
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