CN105448933B - 用于液晶面板中的阵列基板及其制作方法 - Google Patents

用于液晶面板中的阵列基板及其制作方法 Download PDF

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Publication number
CN105448933B
CN105448933B CN201510827673.9A CN201510827673A CN105448933B CN 105448933 B CN105448933 B CN 105448933B CN 201510827673 A CN201510827673 A CN 201510827673A CN 105448933 B CN105448933 B CN 105448933B
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China
Prior art keywords
layer
electrode
insulating layer
hole
low
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Expired - Fee Related
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CN201510827673.9A
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CN105448933A (zh
Inventor
杨祖有
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Wuhan China Star Optoelectronics Technology Co Ltd
TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to CN201510827673.9A priority Critical patent/CN105448933B/zh
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd, Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to DE112015007141.5T priority patent/DE112015007141B4/de
Priority to GB1810335.8A priority patent/GB2561117B/en
Priority to US14/901,250 priority patent/US9759941B2/en
Priority to KR1020187017366A priority patent/KR102068111B1/ko
Priority to JP2018526707A priority patent/JP6564139B2/ja
Priority to PCT/CN2015/095816 priority patent/WO2017088179A1/zh
Publication of CN105448933A publication Critical patent/CN105448933A/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134381—Hybrid switching mode, i.e. for applying an electric field with components parallel and orthogonal to the substrates
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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Abstract

本发明提供了一种阵列基板，其包括：基板(101)；在基板(101)之上的低温多晶硅薄膜晶体管；覆盖低温多晶硅薄膜晶体管的平坦层(110)；在平坦层(110)中的过孔(110a)，其中，过孔(110a)露出低温多晶硅薄膜晶体管的漏电极(109b)；在平坦层(110)之上间隔排列的公共电极(111a)和接收电极(111b)，其中，公共电极(111a)在触控阶段用作驱动电极，并且被间隔断开的公共电极(111a)连接在一起；覆盖公共电极(111a)、接收电极(111b)和平坦层(110)的钝化层(112)；在钝化层(112)上的像素电极(113a)，其中，像素电通过过孔(110a)接触漏电极(109b)。本发明还提供了一种该阵列基板的制作方法。本发明节省了阵列基板制作过程中的一道制程，降低了生产成本。

Description

用于液晶面板中的阵列基板及其制作方法
技术领域
本发明属于液晶显示技术领域，具体地讲，涉及一种用于液晶面板中的阵列基板及其制作方法。
背景技术
随着光电与半导体技术的演进，也带动了平板显示器(Flat Panel Display)的蓬勃发展，而在诸多平板显示器中，液晶显示器(Liquid Crystal Display，简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性，已成为市场的主流。
目前，作为LCD的开关元件而广泛采用的是非晶硅薄膜三极管(a-Si TFT)，但a-SiTFT LCD在满足薄型、轻量、高精细度、高亮度、高可靠性、低功耗等要求仍受到限制。低温多晶硅(Lower Temperature Polycrystal Silicon，LTPS)TFT LCD与a-Si TFT LCD相比，在满足上述要求方面，具有明显优势。
另一方面，随着智能电子产品的普及，电容式触控屏已经被广泛的应用于手机、平板电脑等各种电子产品中。目前，较为常见的电容式触控屏有OGS(One Glass Solution，即一体化触控)、On-Cell(外挂式)和In-Cell(内嵌式)三种技术。其中，In-Cell技术由于其制作工艺上的优势，相比OGS技术和On-Cell技术，具有更加轻薄、透光性更好、结构更加稳定等优点。
经研究发现，目前在制作采用In-Cell技术的LTPS触控屏时，需要采用2道制程来完成驱动电极Tx和接收电极Rx的制作，因此现有技术存在阵列基板的制造过程过于复杂的技术问题。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种用于液晶面板中的阵列基板，其包括：基板；在所述基板之上的低温多晶硅薄膜晶体管；覆盖所述低温多晶硅薄膜晶体管的平坦层；在所述平坦层中的过孔，其中，所述过孔露出所述低温多晶硅薄膜晶体管的漏电极；在所述平坦层之上间隔排列的公共电极和接收电极，其中，所述公共电极在触控阶段用作驱动电极，并且被间隔断开的所述公共电极连接在一起；覆盖所述公共电极、所述接收电极和所述平坦层的钝化层；在所述钝化层上的像素电极，其中，所述像素电通过所述过孔接触所述漏电极。
进一步地，所述阵列基板还包括：在所述钝化层中的第三通孔，其中，所述第三通孔露出所述公共电极；在所述钝化层上且与所述像素电极不接触的连接电极；其中，所述连接电极通过所述第三通孔接触所述公共电极，使被间隔断开的所述公共电极连接在一起。
进一步地，所述公共电极和所述接收电极同时形成。
进一步地，所述像素电极和所述连接电极同时形成。
进一步地，所述阵列基板还包括：在所述基板与所述低温多晶硅薄膜晶体管之间的遮光层；其中，所述遮光层与所述低温多晶硅薄膜晶体管相对设置；在所述遮光层与所述低温多晶硅薄膜晶体管之间的第一绝缘层；其中，所述第一绝缘层覆盖所述遮光层及所述基板。
进一步地，所述低温多晶硅薄膜晶体管包括：在所述第一绝缘层之上的多晶硅层；在所述第一绝缘层之上且覆盖所述多晶硅层的第二绝缘层；在所述第二绝缘层之上的栅电极；在所述第二绝缘层之上且覆盖所述栅电极的第三绝缘层；在所述第三绝缘层和所述第二绝缘层中的第一通孔和第二通孔；其中，所述第一通孔和所述第二通孔露出所述多晶硅层的表面；在所述第三绝缘层之上的源电极和漏电极；其中，所述源电极填充所述第一通孔并接触所述多晶硅层的表面，所述漏电极填充所述第二通孔并接触所述多晶硅层的表面；其中，所述平坦层在所述第三绝缘层之上且覆盖所述源电极和所述漏电极。
本发明的另一目的还在于提供一种用于液晶面板中阵列基板的制作方法，其包括：提供一基板；在所述基板之上形成低温多晶硅薄膜晶体管；形成覆盖所述低温多晶硅薄膜晶体管的平坦层；在所述平坦层中形成过孔，其中，所述过孔露出所述低温多晶硅薄膜晶体管的漏电极；在所述平坦层之上同时形成间隔排列的公共电极和接收电极，其中，所述公共电极在触控阶段用作驱动电极，并且被间隔断开的所述公共电极连接在一起；形成覆盖所述公共电极、所述接收电极和所述平坦层的钝化层；在所述钝化层上形成像素电极，其中，所述像素电极通过所述过孔接触所述漏电极。
进一步地，所述制作方法还包括：在形成所述钝化层之后，在所述钝化层中形成第三通孔，其中，所述第三通孔露出所述公共电极；在形成所述像素电极的同时在所述钝化层上形成与所述像素电极不接触的连接电极；其中，所述连接电极通过所述第三通孔接触所述公共电极，使被间隔断开的所述公共电极连接在一起。
进一步地，所述制作方法还包括：在形成所述低温多晶硅薄膜晶体管之前，在所述基板上形成遮光层，其中，所述遮光层与所述低温多晶硅薄膜晶体管相对设置；在所述基板上形成覆盖所述遮光层的第一绝缘层。
进一步地，所述低温多晶硅薄膜晶体管的制作方法具体包括：在所述第一绝缘层之上形成多晶硅层；在所述第一绝缘层之上形成覆盖所述多晶硅层的第二绝缘层；在所述第二绝缘层之上形成栅电极；在所述第二绝缘层之上形成覆盖所述栅电极的第三绝缘层；在所述第三绝缘层和所述第二绝缘层中形成第一通孔和第二通孔；其中，所述第一通孔和所述第二通孔露出所述多晶硅层的表面；在所述第三绝缘层之上形成源电极和漏电极；其中，所述源电极填充所述第一通孔并接触所述多晶硅层的表面，所述漏电极填充所述第二通孔并接触所述多晶硅层的表面；其中，所述平坦层在所述第三绝缘层之上且覆盖所述源电极和所述漏电极。
本发明的有益效果：本发明在同一道制程中形成在触控阶段作为驱动电极的公共电极和接收电极，与现有技术中的需要两道制程形成驱动电极和接收电极相比，节省了一道制程，简化了低温多晶硅薄膜晶体管阵列基板的制造流程，降低了生产成本。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板的局部结构示意图；
图2是根据本发明的实施例的液晶面板的局部结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚器件，夸大了层和区域的厚度。相同的标号在整个说明书和附图中可用来表示相同的元件。
将理解的是，尽管在这里可使用术语“第一”、“第二”、“第三”等来描述各种元件，但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。
也将理解的是，在一层或元件被称为在或形成在另一层或基板“之上”或“上”时，它可以直接在或形成在该另一层或基板上，或者也可以存在中间层或中间元件。
图1是根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板的局部结构示意图。
参照图1，首先，提供一基板101。在本实施例中，基板101可为透明的玻璃基板，但本发明并不限制于此，例如基板101也可为透明的树脂基板等。
接着，在基板101上形成遮光层102。在本实施例中，遮光层102与将要形成的低温多晶硅薄膜晶体管相对设置，以使遮光层102对低温多晶硅薄膜晶体管的沟道进行遮光，从而防止低温多晶硅薄膜晶体管因光照而产生漏电流。
进一步地，遮光层102与低温多晶硅薄膜晶体管正相对设置。也就是说，在图1中，从下向上看，遮光层102完全遮挡将要形成的低温多晶硅薄膜晶体管。在本实施例中，遮光层102可选择黑色金属材料形成，例如铬、钼或者二者的组合，但本发明并不限制于此。
接着，在基板101上形成覆盖遮光层102的第一绝缘层103。也就是说，遮光层102直接形成在基板101上，第一绝缘层103直接形成在基板101上并覆盖遮光层102，而将要形成的低温多晶硅薄膜晶体管直接形成在第一绝缘层103上。在本实施例中，第一绝缘层103由氮化硅和/或氧化硅形成，例如，第一绝缘层103可包括自下而上堆叠的氮化硅层和氧化硅层，但本发明并不限制于此。
以下将继续参照图1对将要形成的低温多晶硅薄膜晶体管的结构进行具体说明。应当理解的是，这里提供的低温多晶硅薄膜晶体管的结构仅作为一种示例，本发明的低温多晶硅薄膜晶体管的结构并不以此为限。
继续参照图1，首先，在第一绝缘层103之上形成多晶硅层104；其中，多晶硅层104用来形成载流子移动通道。这里，多晶硅层104的形成方法可参照现有技术中的低温多晶硅的形成方式，在此为了避免赘述，就不再进行描述。此外，这里也可对多晶硅层104的两端进行N型掺杂，这样，将要形成的源电极和漏电极分别与多晶硅层104的两端的N型掺杂区进行接触。
接着，在第一绝缘层103之上形成覆盖多晶硅层104的第二绝缘层105。在本实施例中，第二绝缘层105由氮化硅和/或氧化硅形成，例如，第二绝缘层105可包括自下而上堆叠的氮化硅层和氧化硅层，但本发明并不限制于此。
接着，在第二绝缘层105之上形成栅电极106。这里，栅电极106可由导电金属材料形成，例如钼，但本发明并不限制于此。
接着，在第二绝缘层105之上形成覆盖栅电极106的第三绝缘层107。在本实施例中，第三绝缘层107由氮化硅和/或氧化硅形成，例如，第三绝缘层107可包括自下而上堆叠的氮化硅层和氧化硅层，但本发明并不限制于此。
接着，在第三绝缘层107和第二绝缘层105中形成第一通孔108a和第二通孔108b；其中，第一通孔108a和第二通孔108b露出多晶硅层104的表面。这里，如果对多晶硅层104的两端进行了N型掺杂，则第一通孔108a和第二通孔108b的形成分别将多晶硅层104两端的N型掺杂区露出。此外，可通过对第三绝缘层107和第二绝缘层105进行曝光、显影的方式来形成第一通孔108a和第二通孔108b。
最后，在第三绝缘层107之上形成源电极109a和漏电极109b；其中，源电极109a填充第一通孔108a并接触多晶硅层104的表面，漏电极109b填充第二通孔108b并接触多晶硅层104的表面。这里，如果对多晶硅层104的两端进行了N型掺杂，则源电极109a和漏电极109b分别与多晶硅层104两端的N型掺杂区进行接触。此外，源电极109a和漏电极109b可采用钼/铝/钼的合金材料制成，但本发明并不限制于此。
以下将继续参照图1对根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板的制作进行描述。
继续参照图1，在完成低温多晶硅薄膜晶体管的制作之后，接着，在第三绝缘层107之上形成覆盖源电极109a和漏电极109b的平坦层110。在本实施例中，平坦层110可由有机材料形成，但本发明并不限制于此。
接着，在平坦层110中形成过孔110a；其中，所述过孔110a露出低温多晶硅薄膜晶体管的漏电极109b。在本实施例中，可利用曝光、显影的方式在平坦层中110中形成过孔110a，但本发明并不限制于此。
接着，在平坦层110之上同时形成间隔排列的公共电极111a和接收电极111b。这里，根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板在应用中可采用显示与触控分时扫描：在显示图像(即显示阶段)时，公共电极111a为相应的像素单元提供公共电压，是公共电压111a与将要形成的像素电极之间形成电场，并且一个公共电极111a可以对应一个或多个像素单元；在触控扫描(即触控阶段)时，公共电极111a可作为驱动电极使用，用于产生驱动信号。
此外，在本实施例中，公共电极111a和接收电极111b可由氧化铟锡(ITO)材料一起制成，但本发明并不限制于此，例如，公共电极111a和接收电极111b也可由石墨烯、碳纳米管、纳米银等具有高透过率低阻抗的材料一起制成。
接着，形成覆盖公共电极111a、接收电极111b和平坦层110的钝化层112，其中，钝化层112填充公共电极111a和接收电极111b之间的间隔。这里，钝化层112在形成时不形成在过孔110a中；或者钝化层112在形成时形成在过孔110a中，之后在将过孔110a中的钝化层112去除，本发明并不作具体限定。此外，钝化层112由绝缘材料形成。
接着，在钝化层112中形成第三通孔112a，其中，该第三通孔112a将公共电极111a露出。在本实施例中，可利用曝光、显影的方式在钝化层112中形成第三通孔112a，但本发明并不限制于此。
接着，在钝化层112上同时形成相互不接触的像素电极113a和连接电极113b，其中，像素电极113a通过过孔110a接触低温多晶硅薄膜晶体管的漏电极109b，连接电极113b通过第三通孔112a接触公共电极111a，从而将被间隔断开的公共电极111a连接在一起。在本实施例中，像素电极113a和连接电极113b可由氧化铟锡(ITO)材料一起制成，但本发明并不限制于此，例如，像素电极113a和连接电极113b也可由石墨烯、碳纳米管、纳米银等具有高透过率低阻抗的材料一起制成。
如上所述，在同一道制程中形成在触控阶段作为驱动电极的公共电极111a和接收电极111b，与现有技术中的需要两道制程形成驱动电极和接收电极相比，节省了一道制程，简化了低温多晶硅薄膜晶体管阵列基板的制造流程，降低了生产成本。
图2是根据本发明的实施例的液晶面板的局部结构示意图。
参照图2，根据本发明的实施例的液晶面板包括：图1所示的低温多晶硅薄膜晶体管阵列基板1、与低温多晶硅薄膜晶体管阵列基板1对盒设置的彩色滤光片基板2以及夹设于二者之间的液晶层3；其中，液晶层3中包括若干液晶分子。
这里，彩色滤光片基板2通常包括：基板，在基板上的彩色滤光片、黑色矩阵以及其他合适类型的元器件，由于均是现有技术，因此可参照现有技术的彩色滤光片基板的具体结构，在此为了避免赘述，不再对彩色滤光片基板2进行详述。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (10)

1.一种用于液晶面板中的阵列基板，其特征在于，所述阵列基板包括：
基板(101)；
在所述基板(101)之上的低温多晶硅薄膜晶体管；
覆盖所述低温多晶硅薄膜晶体管的平坦层(110)；
在所述平坦层(110)中的过孔(110a)，其中，所述过孔(110a)露出所述低温多晶硅薄膜晶体管的漏电极(109b)；
在所述平坦层(110)之上间隔排列的公共电极(111a)和接收电极(111b)，其中，所述公共电极(111a)在触控阶段用作驱动电极，并且被间隔断开的所述公共电极(111a)连接在一起；
覆盖所述公共电极(111a)、所述接收电极(111b)和所述平坦层(110)的钝化层(112)；
在所述钝化层(112)上的像素电极(113a)，其中，所述像素电极通过所述过孔(110a)接触所述漏电极(109b)。
2.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
在所述钝化层(112)中的第三通孔(112a)，其中，所述第三通孔(112a)露出所述公共电极(111a)；
在所述钝化层(112)上且与所述像素电极(113a)不接触的连接电极(113b)；
其中，所述连接电极(113b)通过所述第三通孔(112a)接触所述公共电极(111a)，使被间隔断开的所述公共电极(111a)连接在一起。
3.根据权利要求1或2所述的阵列基板，其特征在于，所述公共电极(111a)和所述接收电极(111b)同时形成。
4.根据权利要求2所述的阵列基板，其特征在于，所述像素电极(113a)和所述连接电极(113b)同时形成。
5.根据权利要求1所述的阵列基板，其特征在于，所述阵列基板还包括：
在所述基板(101)与所述低温多晶硅薄膜晶体管之间的遮光层(102)，其中，所述遮光层(102)与所述低温多晶硅薄膜晶体管相对设置；
在所述遮光层(102)与所述低温多晶硅薄膜晶体管之间的第一绝缘层(103)，其中，所述第一绝缘层(103)覆盖所述遮光层(102)及所述基板(101)。
6.根据权利要求5所述的阵列基板，其特征在于，所述低温多晶硅薄膜晶体管包括：
在所述第一绝缘层(103)之上的多晶硅层(104)；
在所述第一绝缘层(103)之上且覆盖所述多晶硅层(104)的第二绝缘层(105)；
在所述第二绝缘层(105)之上的栅电极(106)；
在所述第二绝缘层(105)之上且覆盖所述栅电极(106)的第三绝缘层(107)；
在所述第三绝缘层(107)和所述第二绝缘层(105)中的第一通孔(108a)和第二通孔(108b)；其中，所述第一通孔(108a)和所述第二通孔(108b)露出所述多晶硅层(104)的表面；
在所述第三绝缘层(107)之上的源电极(109a)和漏电极(109b)；其中，所述源电极(109a)填充所述第一通孔(108a)并接触所述多晶硅层(104)的表面，所述漏电极(109b)填充所述第二通孔(108b)并接触所述多晶硅层(104)的表面；
其中，所述平坦层(110)在所述第三绝缘层(107)之上且覆盖所述源电极(109a)和所述漏电极(109b)。
7.一种用于液晶面板中阵列基板的制作方法，其特征在于，所述制作方法包括：
提供一基板(101)；
在所述基板(101)之上形成低温多晶硅薄膜晶体管；
形成覆盖所述低温多晶硅薄膜晶体管的平坦层(110)；
在所述平坦层(110)中形成过孔(110a)，其中，所述过孔(110a)露出所述低温多晶硅薄膜晶体管的漏电极(109b)；
在所述平坦层(110)之上同时形成间隔排列的公共电极(111a)和接收电极(111b)，其中，所述公共电极(111a)在触控阶段用作驱动电极，并且被间隔断开的所述公共电极(111a)连接在一起；
形成覆盖所述公共电极(111a)、所述接收电极(111b)和所述平坦层(110)的钝化层(112)；
在所述钝化层(112)上形成像素电极(113a)，其中，所述像素电极(113a)通过所述过孔(110a)接触所述漏电极(109b)。
8.根据权利要求7所述的制作方法，其特征在于，所述制作方法还包括：
在形成所述钝化层(112)之后，在所述钝化层(112)中形成第三通孔(112a)，其中，所述第三通孔(112a)露出所述公共电极(111a)；
在形成所述像素电极(113a)的同时在所述钝化层(112)上形成与所述像素电极(113a)不接触的连接电极(113b)；
其中，所述连接电极(113b)通过所述第三通孔(112a)接触所述公共电极(111a)，使被间隔断开的所述公共电极(111a)连接在一起。
9.根据权利要求7或8所述的制作方法，其特征在于，所述制作方法还包括：
在形成所述低温多晶硅薄膜晶体管之前，在所述基板(101)上形成遮光层(102)，其中，所述遮光层(102)与所述低温多晶硅薄膜晶体管相对设置；
在所述基板(101)上形成覆盖所述遮光层(102)的第一绝缘层(103)。
10.根据权利要求9所述的制作方法，其特征在于，所述低温多晶硅薄膜晶体管的制作方法具体包括：
在所述第一绝缘层(103)之上形成多晶硅层(104)；
在所述第一绝缘层(103)之上形成覆盖所述多晶硅层(104)的第二绝缘层(105)；
在所述第二绝缘层(105)之上形成栅电极(106)；
在所述第二绝缘层(105)之上形成覆盖所述栅电极(106)的第三绝缘层(107)；
在所述第三绝缘层(107)和所述第二绝缘层(105)中形成第一通孔(108a)和第二通孔(108b)；其中，所述第一通孔(108a)和所述第二通孔(108b)露出所述多晶硅层(104)的表面；
在所述第三绝缘层(107)之上形成源电极(109a)和漏电极(109b)；其中，所述源电极(109a)填充所述第一通孔(108a)并接触所述多晶硅层(104)的表面，所述漏电极(109b)填充所述第二通孔(108b)并接触所述多晶硅层(104)的表面；
其中，所述平坦层(110)在所述第三绝缘层(107)之上且覆盖所述源电极(109a)和所述漏电极(109b)。
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