CN102622122B - 触摸屏 - Google Patents

触摸屏 Download PDF

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CN102622122B
CN102622122B CN201110431993.4A CN201110431993A CN102622122B CN 102622122 B CN102622122 B CN 102622122B CN 201110431993 A CN201110431993 A CN 201110431993A CN 102622122 B CN102622122 B CN 102622122B
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electrode
screen
touch
dielectric film
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CN102622122A (zh
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寺本雅博
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Japan Display Inc
Panasonic Intellectual Property Corp of America
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Panasonic Liquid Crystal Display Co Ltd
Japan Display Central Inc
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    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
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    • H01L21/02063Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/0405Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0405Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
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    • H01ELECTRIC ELEMENTS
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    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
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Abstract

本发明提供一种静电电容耦合方式的触摸屏,能抑制特性降低。具备:在衬底上沿第一方向延伸且在与第一方向交叉的第二方向上并排设置的多个第一电极、以及与第一电极交叉且沿第二方向延伸并在第一方向上并排设置的多个第二电极,多个第二电极是矩阵状地形成在相同的层中的电极,多个第一电极的每一个具有与第二电极相比形成在下层且与第二电极交叉的第一部分以及在与第二电极相同的层中与第二电极分离地形成的第二部分,第一电极从第二部分经由形成在绝缘膜中的接触孔向下方延伸而与下层的第一部分连接,以覆盖第一电极和第二电极的方式在衬底上形成保护膜,绝缘膜和保护膜由负型光刻胶构成,第一电极以及第二电极由透明导电性材料构成。

Description

触摸屏
本发明是2009年4月22日提出的申请号为200910135144.7、发明名称为“带触摸屏的显示装置”的分案申请。
技术领域
本发明涉及带触摸屏的显示装置,尤其涉及具有静电电容耦合方式的触摸屏的带触摸屏的显示装置。
背景技术
作为触摸屏的主要方式,已知有检测光的变化的方式、检测电气特性的变化的方式。另外,作为检测电气特性的变化的方式已知有静电电容耦合方式(参照日本特开2008-65748号公报、日本特开2009-015489号公报)。
图9~图11是关于以往的静电电容耦合方式的触摸屏的图,图9是示出电极图案的平面图、图10是示出沿图9的X-X线的剖面结构的剖面图,图11是示出沿图9的XI-XI线的剖面结构的剖面图。
以往的静电电容耦合方式的触摸屏,如图9~图11所示,具有:沿第一方向(例如X方向)延伸且在与上述第一方向交叉的第二方向(例如Y方向)上并排设置的多个电极1X、以及与该电极1X交叉且沿上述第二方向延伸并在上述第一方向上并排设置的多个电极2Y。多个电极1X配置在衬底11上,被在其上层形成的绝缘膜12覆盖。多个电极2Y配置在绝缘膜12上,被在其上层形成的保护膜13覆盖。电极1X和电极2Y由例如ITO(氧化铟锡)等的透明性导电材料形成。
发明内容
(发明要解决的问题)
在以往的静电电容耦合方式的触摸屏中,如图9~图11所示,多个电极1X和多个电极2Y隔着绝缘膜12分别形成在不同的导电层(下层和上层)中。在这样的电极结构的情况下,由于绝缘膜12和上层的电极1X上形成的保护膜13因上层的电极1X而在膜中发生畸变,而且对于反射光来说在下层和上层中光路长度不同,所以在下层的电极1X和上层的电极2Y中发生色差,电极1X和电极2Y的电极图案显现化。这样的电极图案的显现化成为导致光学特性劣化、引起组装有触摸屏的显示装置的特性降低的主要原因,所以必须采取对策。
本发明的目的在于提供可以抑制带触摸屏的显示装置的特性降低的技术。
通过本说明书的描述和附图能够更清楚地理解本发明的上述和其它的目的和新颖特征。
(用来解决问题的手段)
如果简要地说明本申请中公开的发明中的代表性方案的概要,则如下所述。
(1)、一种带触摸屏的显示装置,包括:显示屏;以及在上述显示屏的观察侧的面上配置的静电电容耦合方式的触摸屏,上述触摸屏在衬底上具有:沿第一方向延伸且在与上述第一方向交叉的第二方向上并排设置的多个第一电极、以及与上述第一电极交叉且沿上述第二方向延伸并在上述第一方向上并排设置的多个第二电极,上述多个第一电极的每一个,具有:在与上述第二电极不同的层中形成且与上述第二电极交叉的第一部分、以及在与上述第二电极相同的层中与上述第二电极分离形成的第二部分,上述第一部分通过在上述第一部分和上述第二电极之间的绝缘膜中形成的接触孔与上述第二部分电气连接。
(2)、在上述(1)中,上述第一电极的上述第一部分在上述多个第二电极的上层形成。
(3)、在上述(1)中,上述第一电极的上述第一部分在上述多个第二电极的下层形成。
(4)、在上述(1)-(3)中任一个中,上述第二电极在上述第一电极之间具有比与上述第一电极交叉的部分的宽度宽的部分;上述第一电极在上述第二电极之间具有比与上述第二电极交叉的部分的宽度宽的部分。
(5)、在上述(1)-(4)中任一个中,上述第一电极和上述第二电极由透明导电性材料构成。
(6)、在上述(1)-(5)中任一个中,还具有在上述衬底上形成为覆盖上述第一电极和上述第二电极的保护膜。
(发明的效果)
如果简要地说明由本申请中公开的发明中的代表性方案得到的效果,则如下所述。
根据本发明,可以抑制带触摸屏的显示装置的特性降低。
附图说明
图1是示出在本发明的实施例1的带触摸屏的显示装置中组装的触摸屏的电极图案的平面图。
图2是把图1的一部分放大得到的平面图。
图3是示出沿图1的III-III线的剖面结构的剖面图。
图4是示出沿图1的IV-IV线的剖面结构的剖面图。
图5是示出本发明的实施例1的带触摸屏的显示装置的概略构成的框图。
图6是示出在本发明的实施例2的带触摸屏的显示装置中组装的触摸屏的电极图案的平面图。
图7是示出沿图6的VII-VII线的剖面结构的剖面图。
图8是示出沿图6的VIII-VIII线的剖面结构的剖面图。
图9是示出以往的静电电容耦合方式的触摸屏的电极图案的平面图、
图10是示出沿图9的X-X线的剖面结构的剖面图。
图11是示出沿图9的XI-XI线的剖面结构的剖面图。
(附图标记说明)
1X:电极;
1a:第一部分;
1b:第二部分;
2Y:电极;
2a:第一部分;
2b:第二部分;
11:衬底;
12:绝缘膜;
12a:接触孔;
13:保护膜;
20、触摸屏;
30:液晶显示屏;
40:背光源
具体实施方式
下面,参照附图详细说明本发明的实施例。另外,在用来说明发明的实施例的全部附图中,对具有相同功能的部件赋予相同的附图标记,省略其重复的说明。
(实施例1)
在本实施例1中说明在作为显示屏的一例的例如液晶显示屏上具有触摸屏的带触摸屏的显示装置中使用本发明的例子。
图1-图5是关于本发明的实施例1的带触摸屏的显示装置的图。
图1是示出带触摸屏的显示装置中组装的触摸屏的电极图案的平面图。
图2是把图1的一部分放大得到的平面图。
图3是示出沿图1的III-III线的剖面结构的剖面图。
图4是示出沿图1的IV-IV线的剖面结构的剖面图。
图5是示出带触摸屏的显示装置的概略构成的框图。
另外,在图5中示出触摸屏20的沿图1的V-V线的剖面结构。
本实施例1的带触摸屏的显示装置,如图5所示,包括:液晶显示屏30;在液晶显示屏30的观察者侧的面上配置的静电电容耦合方式的触摸屏20;以及在液晶显示屏30的与观察者侧相反一侧的面下配置的背光源40。作为液晶显示屏30,使用例如IPS方式、TN方式、VA方式等的液晶显示屏。
触摸屏20,如图1~图4所示,具有:沿第一方向(例如X方向)延伸且在与上述第一方向交叉的第二方向(例如Y方向)上以预定的排列间距并排设置的多个电极1X、以及与该电极1X交叉且沿上述第二方向延伸并在上述第一方向上以预定的排列间距并排设置的多个电极2Y。
多个电极2Y的每一个由在上述第二方向上交互配置多个第一部分2a和多个宽度比该第一部分2a宽的第二部分2b而成的电极图案形成。多个电极2Y的每一个配置在衬底11的观察者侧的面上,被在其上层形成的绝缘膜12覆盖。作为衬底11使用例如玻璃等的透明的绝缘性衬底。
多个电极1X的每一个由在上述第一方向上交互配置多个第一部分1a、和多个宽度比该第一部分1a宽的第二部分1b而成的电极图案形成。多个电极1X的每一个的第一部分1a在与电极2Y不同的导电层中形成,与电极2Y的第一部分2a在平面上交叉。多个电极1X的每一个的第二部分1b在与电极2Y相同的导电层中与电极2Y分离地形成。在本实施例中,电极1X的第一部分1a在电极2Y的上层形成。
多个电极1X的每一个的第二部分1b与电极2Y同样地被绝缘膜12覆盖。多个电极1X的每一个的第一部分1a配置在绝缘膜12上,被在其上层形成的保护膜13覆盖。
电极1X的第一部分1a与电极2Y的第一部分2a在平面上交叉,通过在位于电极1X的第一部分1a和电极2Y之间的层间绝缘膜即绝缘膜12中形成的接触孔12a分别与夹着该第一部分2a而相邻的两个第二部分1b电气且机械地连接。
即,多个电极1X的每一个,具有:在与电极2Y不同的导电层中形成且与电极2Y交叉的第一部分1a、以及与电极2Y分离且在与电极2Y同层的导电层中形成的第二部分1b,电极1X的第一部分1a通过在该第一部分1a和电极2Y之间的绝缘膜12中形成的接触孔12a与电极1X的第二部分1b连接。
从平面上看时,电极2Y的第二部分2b配置在相邻的两个电极1X的各自的第一部分1a之间。从平面上看时,电极1X的第二部分1b配置在相邻的两个电极2Y的各自的第一部分2a之间。
即,电极2Y在电极1X之间具有比与电极1X交叉的部分的宽度宽的部分,而电极1X在电极2Y之间具有比与电极2Y交叉的部分的宽度宽的部分。
另外,电极1X和电极2Y由具有高透射性的材料,例如ITO(氧化铟锡)等的透明性导电材料形成。
另外,在图5中,示意性地示出在观察者的手指50与电极1X之间形成C1、C3的电容,观察者的手指50与电极2Y之间形成C2的电容。本实施例的触摸屏20检测电极1X和电极2Y的耦合电容的电容差,检测观察者的手指50触摸的、触摸屏20的触摸面内的触摸位置坐标。
下面,参照图1~图4说明本实施例的触摸屏20的制造方法。
首先,在衬底11的观察者侧的面上形成由透明性导电材料(例如ITO)构成的第一导电膜。
接着,用例如正型光刻胶在上述第一导电膜上形成电极图案的第一掩模,然后,通过使用上述第一掩模作为蚀刻掩模,蚀刻上述第一导电膜,在衬底11上形成电极2Y和电极1X的第二部分1b。
接着,除去上述第一掩模,然后,在包含电极2Y和电极1X的第二部分1b上的衬底11上形成由例如负型光刻胶构成的绝缘膜12。在该工序中,电极2Y和电极1X的第二部分1b被绝缘膜12覆盖。
在绝缘膜12的必要部分上形成接触孔12a,然后,在包含接触孔12a内的绝缘膜12上形成由透明性导电材料(例如ITO)构成的第二导电膜。
接着,用例如正型光刻胶在上述第二导电膜上形成电极图案的第二掩模,然后,通过使用上述第二掩模作为蚀刻掩模,蚀刻上述第二导电膜,在绝缘膜12上形成电极1X的第一部分1a。在该工序中,上层的第一部分1a通过接触孔12a与下层的第二部分1b电气且机械地连接。另外,上层的第一部分1a与下层的电极2Y的第一部分1a交叉。
接着,除去上述第二掩模,然后,在包含电极1X的第一部分1a上的绝缘膜12上形成由例如负型光刻胶构成的保护膜13,由此成为图1~4所示的结构。在该工序中,电极1X的第一部分1a被保护膜13覆盖。
另外,在上述各工序间的适当位置可以插入形成周边的布线图案的工序。
但是,在以往的静电电容耦合方式的触摸屏中,如图9~图11所示,多个电极1X和多个电极2Y隔着绝缘膜12分别形成在不同的导电层(下层和上层)中。在这样的电极结构的情况下,由于绝缘膜12和上层的电极1X上形成的保护膜13因上层的电极1X而在膜中发生畸变,而且对于反射光来说在下层和上层中光路长度不同,所以在下层的电极2Y和上层的电极1X中发生色差,电极1X和电极2Y的电极图案显现化。
与此相对,在本实施例的静电电容耦合方式的触摸屏20中,如图1~图4所示,电极1X具有:在与电极2Y不同的层中与电极2Y交叉地形成的第一部分1a、以及在与电极2Y相同的层中与电极2Y分离地形成的第二部分1b,第一部分1a通过在第一部分1a和电极2Y之间的绝缘膜12中形成的接触孔12a与第二部分1b连接。
在这样的电极结构的情况下,由于保护膜13能够具有均匀的成膜面,能够抑制保护膜13中产生的畸变,抑制因保护膜13的畸变导致的色差发生的电极图案显现化。结果,能够抑制电极图案显现化导致的光学特性劣化,由此能够抑制组装有触摸屏20的显示装置的特性降低。
另外,由于能够使产生色差的部分最小,即,仅仅是电极1X的第一部分1a,所以还能够抑制因光路差导致的色差发生的电极图案显现化。结果,能够抑制电极图案显现化导致的光学特性劣化,由此能够抑制组装有触摸屏20的显示装置的特性降低。
另外,在上层形成的第一部分1a(交联部分)形成了缺陷时,可以通过再次进行形成第一部分1a的工序来修复,能够抑制电极图案显现化导致的光学特性劣化而实现加工性的提高。
(实施例2)
图6至图8是关于本发明的实施例2的带触摸屏的显示装置的图。
图6是示出在带触摸屏的显示装置中组装的触摸屏的电极图案的平面图。
图7是示出沿图6的VII-VII线的剖面结构的剖面图。
图8是示出沿图6的VIII-VIII线的剖面结构的剖面图。
本实施例2的带触摸屏的显示装置基本上是与上述实施例1同样的构成,而以下的构成不同。
即,在上述实施例1中说明了,如图1至图4所示,在下层的导电层中形成电极2Y和电极1X的第二部分1b,在它上层的导电层中形成电极1X的第一部分1a的例子,但是在本实施例2中,如图6至图8所示,在下层的导电层中形成电极1X的第一部分1a,在它上层的导电层中形成电极2Y和电极1X的第二部分1b。
电极1X的第一部分1a(在本实施例中是下层)与电极2Y的第一部分2a在平面上交叉,通过在位于电极1X的第一部分1a和电极2Y之间的层间绝缘膜即绝缘膜12中形成的接触孔12a分别与夹着该第一部分2a而相邻的两个第二部分1b(在本实施例中是上层)电气且机械地连接。
在本实施例2中也是,能够抑制由于保护膜13的畸变导致的色差发生的电极图案显现化以及由于光路差导致的色差发生的电极图案显现化,因此,能够抑制电极图案显现化导致的光学特性劣化,能够抑制组装有触摸屏20的显示装置的特性降低。
另外,在上述的实施例中,作为显示屏的一例,说明了在液晶显示屏上具有触摸屏的带触摸屏的显示装置,但本发明并不仅限于此,也能够在有机EL显示屏、无机EL显示屏等的其它显示屏上具有触摸屏的带触摸屏的显示装置中使用本发明。
以上,基于上述实施例具体说明了由本发明人提出的发明,但本发明不限于上述实施例,在不脱离其主要构思的范围内可以进行各种变形。

Claims (4)

1.一种静电电容耦合方式的触摸屏,其特征在于,
上述触摸屏在衬底上具有沿第一方向延伸且在与上述第一方向交叉的第二方向上并排设置的多个第一电极、以及与上述第一电极交叉且沿上述第二方向延伸并在上述第一方向上并排设置的多个第二电极,
上述多个第二电极是矩阵状地形成在相同的层中的电极,
上述多个第一电极的每一个具有:
与上述第二电极相比形成在下层且与上述第二电极交叉的第一部分;以及
在与上述第二电极相同的层中与上述第二电极分离地形成的第二部分,
上述第一电极的上述第二部分从与上述第二电极同层的上述第二部分经由形成在绝缘膜中的接触孔向下方延伸而与下层的上述第一部分连接,
以覆盖上述第一电极和上述第二电极的方式在上述衬底上形成保护膜,
上述绝缘膜和上述保护膜由负型光刻胶构成,
上述保护膜还形成于所述接触孔内,
上述第一电极以及上述第二电极由透明导电性材料构成,
上述第一电极的上述第二部分是在包括上述接触孔内的上述绝缘膜上形成由上述透明导电性材料构成的膜厚比上述绝缘膜薄的导电膜,并使用正型光刻胶的掩模通过蚀刻而形成的。
2.如权利要求1所述的静电电容耦合方式的触摸屏,其特征在于:
上述第二电极在上述第一电极之间具有宽度比与上述第一电极交叉的部分的宽度宽的部分;
上述第一电极在上述第二电极之间具有宽度比与上述第二电极交叉的部分的宽度宽的部分。
3.一种静电电容耦合方式的触摸屏,其特征在于,
上述触摸屏在衬底上具有沿第一方向延伸且在与上述第一方向交叉的第二方向上并排设置的多个第一电极、以及与上述第一电极交叉且沿上述第二方向延伸并在上述第一方向上并排设置的多个第二电极,
上述多个第二电极是矩阵状地形成在相同的层中的电极,
上述多个第一电极的每一个具有:
与上述第二电极相比形成在上层且与上述第二电极交叉的第一部分;以及
在与上述第二电极相同的层中与上述第二电极分离地形成的第二部分,
上述第一电极的上述第一部分从与上述第二电极交叉的上述第一部分经由形成在绝缘膜中的接触孔向下方延伸而与下层的上述第二部分连接,
以覆盖上述第一电极和上述第二电极的方式在上述衬底上形成保护膜,
上述绝缘膜和上述保护膜由负型光刻胶构成,
上述保护膜还形成于所述接触孔内,
上述第一电极以及上述第二电极由透明导电性材料构成,
上述第一电极的上述第一部分是在包括上述接触孔内的上述绝缘膜上形成由上述透明导电性材料构成的膜厚比上述绝缘膜薄的导电膜,并使用正型光刻胶的掩模通过蚀刻而形成的。
4.如权利要求3所述的静电电容耦合方式的触摸屏,其特征在于:
上述第二电极在上述第一电极之间具有宽度比与上述第一电极交叉的部分的宽度宽的部分;
上述第一电极在上述第二电极之间具有宽度比与上述第二电极交叉的部分的宽度宽的部分。
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