GB1112405A - Formation of small dimensioned apertures using photographic masking and etching techniques - Google Patents

Formation of small dimensioned apertures using photographic masking and etching techniques

Info

Publication number
GB1112405A
GB1112405A GB4325063A GB4325063A GB1112405A GB 1112405 A GB1112405 A GB 1112405A GB 4325063 A GB4325063 A GB 4325063A GB 4325063 A GB4325063 A GB 4325063A GB 1112405 A GB1112405 A GB 1112405A
Authority
GB
United Kingdom
Prior art keywords
layer
slot
semi
exposed
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4325063A
Inventor
Patrick William Shaw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Ltd
Original Assignee
Texas Instruments Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Ltd filed Critical Texas Instruments Ltd
Priority to GB4325063A priority Critical patent/GB1112405A/en
Publication of GB1112405A publication Critical patent/GB1112405A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1,112,405. Semi-conductor devices. TEXAS INSTRUMENTS Ltd. 2 Nov., 1964 [1 Nov., 1963], No. 43250/63. Heading H1K. [Also in Division G2] Small-area diodes of the Schottky barrier type are produced by coating a metal film 64 with a heavily doped semi-conductor region 62 and a lightly doped region 52 on which is deposited an aluminium oxide layer 54. A photoresist layer is coated on the oxide layer and exposed through a photomask having an opaque strip. The material is then developed and the oxide thus exposed is etched away to form slot 66. The photoresist layer is then removed and a layer of silicon oxide 56 and a photoresist layer are deposited and the material exposed to same photomask turned through 90 degrees. The material is now developed and etched to form slot 68 and well 61 but the aluminium oxide layer 54 underlying slot 68 is not etched as its etching rate is far slower than that of silicon oxide. The remaining photoresist is now removed and a metal film deposited in slot 68 to form terminal 60 and semi-conductor junction 61, the area of the junction being 1.2 x 10<SP>-2</SP> square inches. Alternatively a point contact may be inserted in the well. The masking process may be also applied to integrated circuits. The two insulating layers may both be of silicon oxide.
GB4325063A 1963-11-01 1963-11-01 Formation of small dimensioned apertures using photographic masking and etching techniques Expired GB1112405A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB4325063A GB1112405A (en) 1963-11-01 1963-11-01 Formation of small dimensioned apertures using photographic masking and etching techniques

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4325063A GB1112405A (en) 1963-11-01 1963-11-01 Formation of small dimensioned apertures using photographic masking and etching techniques

Publications (1)

Publication Number Publication Date
GB1112405A true GB1112405A (en) 1968-05-08

Family

ID=10427926

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4325063A Expired GB1112405A (en) 1963-11-01 1963-11-01 Formation of small dimensioned apertures using photographic masking and etching techniques

Country Status (1)

Country Link
GB (1) GB1112405A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030117A1 (en) * 1979-11-28 1981-06-10 Fujitsu Limited Method of forming an opening in a negative resist film
US4481263A (en) * 1982-05-17 1984-11-06 Raytheon Company Programmable read only memory
EP3333686A1 (en) * 2008-04-22 2018-06-13 Japan Display Inc. Display device with touch panel

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030117A1 (en) * 1979-11-28 1981-06-10 Fujitsu Limited Method of forming an opening in a negative resist film
US4581316A (en) * 1979-11-28 1986-04-08 Fujitsu Limited Method of forming resist patterns in negative photoresist layer using false pattern
US4481263A (en) * 1982-05-17 1984-11-06 Raytheon Company Programmable read only memory
EP3333686A1 (en) * 2008-04-22 2018-06-13 Japan Display Inc. Display device with touch panel
US10168828B2 (en) 2008-04-22 2019-01-01 Japan Display Inc. Display device with touch panel
US10719166B2 (en) 2008-04-22 2020-07-21 Japan Display Inc. Manufacturing method of touch panel

Similar Documents

Publication Publication Date Title
GB1347874A (en) Semiconductor devices of compound semiconductor material
JPS52102690A (en) Semiconductor capacitance device
GB1499848A (en) Recessed oxide n-channel fets
SE316221B (en)
GB1203341A (en) Improvements in or relating to etching of openings in films
GB1112405A (en) Formation of small dimensioned apertures using photographic masking and etching techniques
US3710204A (en) A semiconductor device having a screen electrode of intrinsic semiconductor material
US3615936A (en) Semiconductor device and method of making the same
JPS5664453A (en) Manufacture of semiconductor device
GB1358715A (en) Manufacture of semiconductor devices
JPS5382277A (en) Schottky gate field effect transistor
JPS5617039A (en) Semiconductor device
JPS5483778A (en) Mos semiconductor device and its manufacture
US3372071A (en) Method of forming a small area junction semiconductor
JPS5562763A (en) Semiconductor device
JPS5567160A (en) Semiconductor memory storage
GB1260567A (en) Improvements in or relating to semiconductor devices
JPS5370769A (en) Production of semiconductor device
JPS566474A (en) Manufacture of semiconductor device
JPS52147982A (en) Manufacture of mos-type semiconductor ic unit
JPS55140261A (en) Substrate potential generator
JPS54111793A (en) Semiconductor integrated circuit device and its manufacture
JPS52147983A (en) Insulation gate type semiconductor device
JPS5365671A (en) Schottky barrier semiconductor device and its manufacture
JPS52128078A (en) Manufacture of field effect transistor