TWI371753B - Phase change memories and/or methods of programming phase change memories using sequential reset control - Google Patents

Phase change memories and/or methods of programming phase change memories using sequential reset control

Info

Publication number
TWI371753B
TWI371753B TW094115509A TW94115509A TWI371753B TW I371753 B TWI371753 B TW I371753B TW 094115509 A TW094115509 A TW 094115509A TW 94115509 A TW94115509 A TW 94115509A TW I371753 B TWI371753 B TW I371753B
Authority
TW
Taiwan
Prior art keywords
phase change
change memories
methods
reset control
sequential reset
Prior art date
Application number
TW094115509A
Other languages
English (en)
Other versions
TW200603154A (en
Inventor
Beak-Hyung Cho
Du-Eung Kim
Woo-Yeong Cho
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200603154A publication Critical patent/TW200603154A/zh
Application granted granted Critical
Publication of TWI371753B publication Critical patent/TWI371753B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1096—Write circuits, e.g. I/O line write drivers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
TW094115509A 2004-07-09 2005-05-13 Phase change memories and/or methods of programming phase change memories using sequential reset control TWI371753B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040053346A KR100587702B1 (ko) 2004-07-09 2004-07-09 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US11/074,557 US7304885B2 (en) 2004-07-09 2005-03-08 Phase change memories and/or methods of programming phase change memories using sequential reset control

Publications (2)

Publication Number Publication Date
TW200603154A TW200603154A (en) 2006-01-16
TWI371753B true TWI371753B (en) 2012-09-01

Family

ID=36077005

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115509A TWI371753B (en) 2004-07-09 2005-05-13 Phase change memories and/or methods of programming phase change memories using sequential reset control

Country Status (6)

Country Link
US (4) US7304885B2 (zh)
EP (1) EP1617437B1 (zh)
JP (1) JP4832817B2 (zh)
KR (1) KR100587702B1 (zh)
CN (1) CN1734671B (zh)
TW (1) TWI371753B (zh)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100587702B1 (ko) * 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
DE602005021527D1 (de) * 2004-10-21 2010-07-08 Nxp Bv Integrierte schaltung mit phasenänderungs-speicherzellen und verfahren zum adressieren von phasenänderungs-speicherzellen
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
US7548448B2 (en) * 2005-08-24 2009-06-16 Infineon Technologies Ag Integrated circuit having a switch
KR100816748B1 (ko) 2006-03-16 2008-03-27 삼성전자주식회사 프로그램 서스펜드/리줌 모드를 지원하는 상 변화 메모리장치 및 그것의 프로그램 방법
KR100857742B1 (ko) 2006-03-31 2008-09-10 삼성전자주식회사 상 변화 메모리 장치 및 그것의 프로그램 전류 인가 방법
US7499316B2 (en) 2006-03-31 2009-03-03 Samsung Electronics Co., Ltd. Phase change memory devices and program methods
KR100719383B1 (ko) * 2006-04-12 2007-05-18 삼성전자주식회사 멀티 프로그램 방법을 사용하는 상 변화 메모리 장치
KR100763231B1 (ko) 2006-09-11 2007-10-04 삼성전자주식회사 상변화 메모리 장치
JP4958244B2 (ja) * 2006-09-15 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置
JP4328796B2 (ja) 2006-10-31 2009-09-09 エルピーダメモリ株式会社 半導体記憶装置及びその書き込み制御方法
US7679980B2 (en) * 2006-11-21 2010-03-16 Qimonda North America Corp. Resistive memory including selective refresh operation
KR100827703B1 (ko) * 2006-12-14 2008-05-07 삼성전자주식회사 상변화메모리 장치의 테스트 방법
US7760545B2 (en) * 2006-12-26 2010-07-20 Elpida Memory, Inc. Semiconductor memory device and programming method thereof
JP5490357B2 (ja) 2007-04-04 2014-05-14 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその制御方法
JP5413938B2 (ja) 2007-05-08 2014-02-12 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその書き込み制御方法
KR101274190B1 (ko) 2007-07-30 2013-06-14 삼성전자주식회사 저항체를 이용한 비휘발성 메모리 장치
JP5420828B2 (ja) 2007-08-24 2014-02-19 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその書き込み制御方法
JP2009104716A (ja) * 2007-10-24 2009-05-14 Toshiba Corp 抵抗変化メモリ装置とそのデータ消去方法
KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
KR100900121B1 (ko) * 2007-11-30 2009-06-01 주식회사 하이닉스반도체 반도체 메모리 장치
KR100895400B1 (ko) * 2007-12-03 2009-05-06 주식회사 하이닉스반도체 상 변화 메모리 장치
KR100858688B1 (ko) * 2007-12-06 2008-09-16 한양대학교 산학협력단 비휘발성 기억 장치 및 그 읽기 방법
KR101339288B1 (ko) 2007-12-14 2013-12-09 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치
US8964488B2 (en) 2007-12-14 2015-02-24 Samsung Electronics Co., Ltd. Non-volatile memory device using variable resistance element with an improved write performance
US7889536B2 (en) * 2007-12-17 2011-02-15 Qimonda Ag Integrated circuit including quench devices
JP5474313B2 (ja) * 2008-04-25 2014-04-16 ピーエスフォー ルクスコ エスエイアールエル 半導体記憶装置及びその制御方法
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
IT1393759B1 (it) * 2008-07-28 2012-05-08 Stmicroelectronics Rousset Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm
JP5106297B2 (ja) 2008-07-30 2012-12-26 株式会社東芝 半導体記憶装置
KR101453969B1 (ko) 2008-07-31 2014-10-22 삼성전자주식회사 저항성 메모리 장치 및 그것의 쓰기 방법
US8027209B2 (en) * 2008-10-06 2011-09-27 Sandisk 3D, Llc Continuous programming of non-volatile memory
JP2010170607A (ja) 2009-01-21 2010-08-05 Elpida Memory Inc 半導体メモリ
JP4720912B2 (ja) * 2009-01-22 2011-07-13 ソニー株式会社 抵抗変化型メモリデバイス
KR20100097407A (ko) * 2009-02-26 2010-09-03 삼성전자주식회사 저항성 메모리 장치, 이를 포함하는 메모리 시스템 및 저항성 메모리 장치의 프로그램 방법
KR100996185B1 (ko) * 2009-03-16 2010-11-25 주식회사 하이닉스반도체 상변화 메모리장치
KR20100107609A (ko) * 2009-03-26 2010-10-06 삼성전자주식회사 저항성 메모리 장치, 이를 포함하는 메모리 시스템 및 저항성 메모리 장치의 기입 방법
US8239629B2 (en) * 2009-03-31 2012-08-07 Micron Technology, Inc. Hierarchical memory architecture to connect mass storage devices
US7948782B2 (en) * 2009-08-28 2011-05-24 International Business Machines Corporation Content addressable memory reference clock
US20110051485A1 (en) * 2009-08-28 2011-03-03 International Business Machines Corporation Content addressable memory array writing
US8804411B1 (en) 2009-09-11 2014-08-12 Micron Technology, Inc Dual mode clock and data scheme for memory programming
US8107276B2 (en) * 2009-12-04 2012-01-31 International Business Machines Corporation Resistive memory devices having a not-and (NAND) structure
WO2011080784A1 (en) * 2009-12-31 2011-07-07 Ferdinando Bedeschi Methods for a phase-change memory array
JP2011204288A (ja) * 2010-03-24 2011-10-13 Toshiba Corp 不揮発性半導体記憶装置
US8570828B2 (en) * 2010-04-12 2013-10-29 Mosaid Technologies Incorporated Memory programming using variable data width
US8497705B2 (en) * 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8909849B2 (en) * 2010-11-15 2014-12-09 Intel Corporation Pipeline architecture for scalable performance on memory
KR20130058533A (ko) * 2011-11-25 2013-06-04 에스케이하이닉스 주식회사 상 변화 메모리 장치 및 그것을 포함하는 데이터 저장 장치
KR101970314B1 (ko) * 2012-04-10 2019-04-18 삼성전자주식회사 불휘발성 메모리 장치, 이의 동작 방법, 및 이를 포함하는 전자 장치
CN102982841A (zh) * 2012-12-18 2013-03-20 中国科学院上海微系统与信息技术研究所 一种相变存储器的编程系统及方法
KR102154296B1 (ko) 2012-12-18 2020-09-14 삼성전자 주식회사 저항체를 이용한 비휘발성 메모리 장치의 구동 방법 및 비휘발성 메모리 장치
KR102151183B1 (ko) * 2014-06-30 2020-09-02 삼성전자주식회사 저항성 메모리 장치 및 저항성 메모리 장치의 동작방법
US9711213B2 (en) * 2014-09-04 2017-07-18 Micron Technology, Inc. Operational signals generated from capacitive stored charge
KR102217243B1 (ko) * 2014-10-28 2021-02-18 삼성전자주식회사 저항성 메모리 장치, 저항성 메모리 시스템 및 저항성 메모리 장치의 동작방법
US9613696B1 (en) * 2015-12-16 2017-04-04 Stmicroelectronics International N.V. Memory device including decoder for a program pulse and related methods
JP6249029B2 (ja) * 2016-03-08 2017-12-20 Ｎｔｔエレクトロニクス株式会社 データ位相追従装置、データ位相追従方法及び通信装置
KR20180032391A (ko) 2016-09-22 2018-03-30 에스케이하이닉스 주식회사 반도체 메모리 장치
KR102067112B1 (ko) * 2017-10-17 2020-01-16 한양대학교 산학협력단 Pcm 기반의 뉴런 네트워크 소자
CN109872738B (zh) 2019-02-27 2020-12-15 江苏时代全芯存储科技股份有限公司 记忆体装置及写入方法
US11410722B2 (en) * 2020-10-21 2022-08-09 Samsung Electronics Co., Ltd. Phase-change memory device for improving resistance drift and dynamic resistance drift compensation method of the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922648A (en) * 1974-08-19 1975-11-25 Energy Conversion Devices Inc Method and means for preventing degradation of threshold voltage of filament-forming memory semiconductor device
JP2845952B2 (ja) * 1989-06-28 1999-01-13 株式会社日立製作所 薄膜磁気メモリセルとその記録および再生装置
US6256224B1 (en) * 2000-05-03 2001-07-03 Hewlett-Packard Co Write circuit for large MRAM arrays
JP3720983B2 (ja) * 1998-06-23 2005-11-30 株式会社東芝 強誘電体メモリ
US6075719A (en) 1999-06-22 2000-06-13 Energy Conversion Devices, Inc. Method of programming phase-change memory element
KR100322470B1 (ko) * 1999-07-22 2002-02-07 윤종용 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법
US6236611B1 (en) * 1999-12-20 2001-05-22 Motorola, Inc. Peak program current reduction apparatus and method
US6426893B1 (en) * 2000-02-17 2002-07-30 Sandisk Corporation Flash eeprom system with simultaneous multiple data sector programming and storage of physical block characteristics in other designated blocks
JP3620434B2 (ja) * 2000-07-26 2005-02-16 株式会社日立製作所 情報処理システム
US6480438B1 (en) 2001-06-12 2002-11-12 Ovonyx, Inc. Providing equal cell programming conditions across a large and high density array of phase-change memory cells
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US6504196B1 (en) * 2001-08-30 2003-01-07 Micron Technology, Inc. CMOS imager and method of formation
US6545907B1 (en) 2001-10-30 2003-04-08 Ovonyx, Inc. Technique and apparatus for performing write operations to a phase change material memory device
US6768665B2 (en) 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
US6839270B2 (en) * 2003-01-17 2005-01-04 Hewlett-Packard Development Company, L.P. System for and method of accessing a four-conductor magnetic random access memory
JP4331966B2 (ja) * 2003-04-14 2009-09-16 株式会社ルネサステクノロジ 半導体集積回路
DE60315613T2 (de) * 2003-06-16 2008-05-08 Stmicroelectronics S.R.L., Agrate Brianza Schreibschaltung für Phasenwechsel-Speicher
KR100642187B1 (ko) * 2003-09-08 2006-11-10 가부시끼가이샤 도시바 불휘발성 반도체 기억 장치, 전자 카드 및 전자 장치
US7283384B1 (en) * 2004-03-24 2007-10-16 Silicon Magnetic Systems Magnetic memory array architecture
JP4256305B2 (ja) * 2004-06-09 2009-04-22 株式会社東芝 半導体記憶装置
KR100587702B1 (ko) * 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US7113424B2 (en) * 2004-11-23 2006-09-26 Infineon Technologies Ag Energy adjusted write pulses in phase-change memories
US7099180B1 (en) * 2005-02-15 2006-08-29 Intel Corporation Phase change memory bits reset through a series of pulses of increasing amplitude

Also Published As

Publication number Publication date
KR20060004289A (ko) 2006-01-12
JP4832817B2 (ja) 2011-12-07
US7643335B2 (en) 2010-01-05
EP1617437B1 (en) 2013-03-20
US20110242886A1 (en) 2011-10-06
US20100097850A1 (en) 2010-04-22
CN1734671B (zh) 2010-04-21
US8194442B2 (en) 2012-06-05
US20060007729A1 (en) 2006-01-12
US20080137402A1 (en) 2008-06-12
US7304885B2 (en) 2007-12-04
EP1617437A1 (en) 2006-01-18
CN1734671A (zh) 2006-02-15
TW200603154A (en) 2006-01-16
US7944741B2 (en) 2011-05-17
JP2006024355A (ja) 2006-01-26
KR100587702B1 (ko) 2006-06-08

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