IT1393759B1 - Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm - Google Patents

Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm

Info

Publication number
IT1393759B1
IT1393759B1 ITTO2008A000581A ITTO20080581A IT1393759B1 IT 1393759 B1 IT1393759 B1 IT 1393759B1 IT TO2008A000581 A ITTO2008A000581 A IT TO2008A000581A IT TO20080581 A ITTO20080581 A IT TO20080581A IT 1393759 B1 IT1393759 B1 IT 1393759B1
Authority
IT
Italy
Prior art keywords
memory cell
pcm memory
programming
capacity
discharge
Prior art date
Application number
ITTO2008A000581A
Other languages
English (en)
Inventor
Sandre Guido De
Luca Bettini
Original Assignee
Stmicroelectronics Rousset
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stmicroelectronics Rousset filed Critical Stmicroelectronics Rousset
Priority to ITTO2008A000581A priority Critical patent/IT1393759B1/it
Priority to US12/510,661 priority patent/US8054698B2/en
Publication of ITTO20080581A1 publication Critical patent/ITTO20080581A1/it
Application granted granted Critical
Publication of IT1393759B1 publication Critical patent/IT1393759B1/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0078—Write using current through the cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Read Only Memory (AREA)
ITTO2008A000581A 2008-07-28 2008-07-28 Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm IT1393759B1 (it)

Priority Applications (2)

Application Number Priority Date Filing Date Title
ITTO2008A000581A IT1393759B1 (it) 2008-07-28 2008-07-28 Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm
US12/510,661 US8054698B2 (en) 2008-07-28 2009-07-28 Device for programming a PCM cell with discharge of capacitance and method for programming a PCM cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ITTO2008A000581A IT1393759B1 (it) 2008-07-28 2008-07-28 Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm

Publications (2)

Publication Number Publication Date
ITTO20080581A1 ITTO20080581A1 (it) 2010-01-29
IT1393759B1 true IT1393759B1 (it) 2012-05-08

Family

ID=40523779

Family Applications (1)

Application Number Title Priority Date Filing Date
ITTO2008A000581A IT1393759B1 (it) 2008-07-28 2008-07-28 Dispositivo di programmazione di una cella di memoria pcm con scarica di capacita' e metodo per la programmazione di una cella di memoria pcm

Country Status (2)

Country Link
US (1) US8054698B2 (it)
IT (1) IT1393759B1 (it)

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US8279684B2 (en) 2009-10-14 2012-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for extending word-line pulses
EP2355064A1 (en) * 2010-02-03 2011-08-10 Nxp B.V. A method of de-activating and activating an electronic article surveillance (esa) device, and an eas device
US8861259B2 (en) 2010-10-29 2014-10-14 Rambus Inc. Resistance change memory cell circuits and methods
JP5935284B2 (ja) 2011-10-18 2016-06-15 ソニー株式会社 撮像装置および撮像表示システム
JP5935285B2 (ja) * 2011-10-19 2016-06-15 ソニー株式会社 撮像装置および撮像表示システム
US8605497B2 (en) 2011-12-22 2013-12-10 International Business Machines Corporation Parallel programming scheme in multi-bit phase change memory
US8614911B2 (en) 2011-12-22 2013-12-24 International Business Machines Corporation Energy-efficient row driver for programming phase change memory
US9165644B2 (en) 2012-05-11 2015-10-20 Axon Technologies Corporation Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse
US8953362B2 (en) 2012-05-11 2015-02-10 Adesto Technologies Corporation Resistive devices and methods of operation thereof
US8817543B2 (en) * 2012-07-11 2014-08-26 Ememory Technology Inc. Flash memory
CN104756191A (zh) * 2012-09-11 2015-07-01 Adesto技术公司 阻性器件及其操作方法
KR20140075365A (ko) * 2012-12-11 2014-06-19 에스케이하이닉스 주식회사 전압 생성회로, 이를 포함하는 라이트 드라이버 및 반도체 메모리 장치
US9563371B2 (en) 2013-07-26 2017-02-07 Globalfoundreis Inc. Self-adjusting phase change memory storage module
GB2524534A (en) * 2014-03-26 2015-09-30 Ibm Determining a cell state of a resistive memory cell
US9711213B2 (en) 2014-09-04 2017-07-18 Micron Technology, Inc. Operational signals generated from capacitive stored charge
US9311996B2 (en) * 2014-09-10 2016-04-12 Kabushiki Kaisha Toshiba Semiconductor storage device having resistance-change storage elements
CN104821179B (zh) * 2015-04-16 2017-09-26 江苏时代全芯存储科技有限公司 记忆体驱动电路
US9520189B1 (en) * 2015-10-29 2016-12-13 International Business Machines Corporation Enhanced temperature compensation for resistive memory cell circuits
US9921598B1 (en) * 2017-01-03 2018-03-20 Stmicroelectronics S.R.L. Analog boost circuit for fast recovery of mirrored current
IT201700042107A1 (it) * 2017-04-14 2018-10-14 St Microelectronics Srl Disposizione circuitale elettronica di pilotaggio ad alta tensione, apparecchiatura e procedimento corrispondenti
US10204681B2 (en) * 2017-05-09 2019-02-12 National Tsing Hua University Control circuit configured to terminate a set operation and a reset operation of a resistive memory cell of memory array based on the voltage variation on the data line of the resistive memory cell
DE102019132067A1 (de) * 2019-01-25 2020-07-30 Taiwan Semiconductor Manufacturing Co., Ltd. Strombegrenzer für speichervorrichtung
US11647684B2 (en) 2021-03-30 2023-05-09 International Business Machines Corporation Nonvolatile tunable capacitive processing unit
WO2022204916A1 (en) * 2021-03-30 2022-10-06 Yangtze Memory Technologies Co., Ltd. Memory device and operation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6487113B1 (en) * 2001-06-29 2002-11-26 Ovonyx, Inc. Programming a phase-change memory with slow quench time
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6657420B1 (en) * 2001-10-19 2003-12-02 National Semiconductor Corporation Accurate ultra-low current generator
EP1489622B1 (en) * 2003-06-16 2007-08-15 STMicroelectronics S.r.l. Writing circuit for a phase change memory device
KR100587702B1 (ko) * 2004-07-09 2006-06-08 삼성전자주식회사 피크 전류의 감소 특성을 갖는 상변화 메모리 장치 및그에 따른 데이터 라이팅 방법
US7903447B2 (en) * 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US7336110B1 (en) * 2007-01-17 2008-02-26 Atmel Corporation Differential amplitude controlled sawtooth generator

Also Published As

Publication number Publication date
ITTO20080581A1 (it) 2010-01-29
US20100020594A1 (en) 2010-01-28
US8054698B2 (en) 2011-11-08

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