TWI305958B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- TWI305958B TWI305958B TW092102907A TW92102907A TWI305958B TW I305958 B TWI305958 B TW I305958B TW 092102907 A TW092102907 A TW 092102907A TW 92102907 A TW92102907 A TW 92102907A TW I305958 B TWI305958 B TW I305958B
- Authority
- TW
- Taiwan
- Prior art keywords
- region
- channel tft
- semiconductor
- semiconductor layer
- gettering
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
- H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
- H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
Landscapes
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002045239A JP3961310B2 (ja) | 2002-02-21 | 2002-02-21 | 半導体装置の作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200305288A TW200305288A (en) | 2003-10-16 |
| TWI305958B true TWI305958B (en) | 2009-02-01 |
Family
ID=27784278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092102907A TWI305958B (en) | 2002-02-21 | 2003-02-12 | Semiconductor device and manufacturing method thereof |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7332385B2 (https=) |
| JP (1) | JP3961310B2 (https=) |
| KR (1) | KR101017225B1 (https=) |
| CN (2) | CN101075622B (https=) |
| TW (1) | TWI305958B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4115158B2 (ja) * | 2002-04-24 | 2008-07-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
| JP4115283B2 (ja) * | 2003-01-07 | 2008-07-09 | シャープ株式会社 | 半導体装置およびその製造方法 |
| KR100542986B1 (ko) | 2003-04-29 | 2006-01-20 | 삼성에스디아이 주식회사 | 박막 트랜지스터, 상기 박막 트랜지스터 제조 방법 및 이를 이용한 표시장치 |
| KR100543004B1 (ko) | 2003-09-18 | 2006-01-20 | 삼성에스디아이 주식회사 | 평판표시장치 |
| JP4722391B2 (ja) * | 2003-12-04 | 2011-07-13 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの製造方法 |
| US7867791B2 (en) * | 2005-07-29 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device using multiple mask layers formed through use of an exposure mask that transmits light at a plurality of intensities |
| KR100741976B1 (ko) | 2005-08-25 | 2007-07-23 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그 제조 방법 |
| EP1793366A3 (en) | 2005-12-02 | 2009-11-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and electronic device |
| TWI603307B (zh) | 2006-04-05 | 2017-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置，顯示裝置，和電子裝置 |
| KR100770269B1 (ko) * | 2006-05-18 | 2007-10-25 | 삼성에스디아이 주식회사 | 박막트랜지스터의 제조방법 |
| KR100878284B1 (ko) | 2007-03-09 | 2009-01-12 | 삼성모바일디스플레이주식회사 | 박막트랜지스터와 그 제조 방법 및 이를 구비한유기전계발광표시장치 |
| KR100848341B1 (ko) | 2007-06-13 | 2008-07-25 | 삼성에스디아이 주식회사 | 박막트랜지스터, 그의 제조방법, 및 이를 포함하는유기전계발광표시장치 |
| JP2010114409A (ja) * | 2008-10-10 | 2010-05-20 | Sony Corp | Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW226478B (en) | 1992-12-04 | 1994-07-11 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for manufacturing the same |
| US5501989A (en) | 1993-03-22 | 1996-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making semiconductor device/circuit having at least partially crystallized semiconductor layer |
| TW264575B (https=) | 1993-10-29 | 1995-12-01 | Handotai Energy Kenkyusho Kk | |
| US5923962A (en) | 1993-10-29 | 1999-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP3431033B2 (ja) | 1993-10-29 | 2003-07-28 | 株式会社半導体エネルギー研究所 | 半導体作製方法 |
| JPH08130652A (ja) * | 1994-10-28 | 1996-05-21 | Nippon Steel Corp | ２次元画像データの圧縮方式および伸長方式 |
| KR100265179B1 (ko) | 1995-03-27 | 2000-09-15 | 야마자끼 순페이 | 반도체장치와 그의 제작방법 |
| TW297138B (https=) | 1995-05-31 | 1997-02-01 | Handotai Energy Kenkyusho Kk | |
| US5637519A (en) * | 1996-03-21 | 1997-06-10 | Industrial Technology Research Institute | Method of fabricating a lightly doped drain thin-film transistor |
| JP3593212B2 (ja) * | 1996-04-27 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| TW548686B (en) | 1996-07-11 | 2003-08-21 | Semiconductor Energy Lab | CMOS semiconductor device and apparatus using the same |
| JP3662371B2 (ja) | 1996-10-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法及び薄膜トランジスタ |
| JP3844552B2 (ja) | 1997-02-26 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6133075A (en) | 1997-04-25 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP3376247B2 (ja) * | 1997-05-30 | 2003-02-10 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタ及び薄膜トランジスタを用いた半導体装置 |
| US6452211B1 (en) | 1997-06-10 | 2002-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor thin film and semiconductor device |
| JP4017706B2 (ja) | 1997-07-14 | 2007-12-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP3974229B2 (ja) * | 1997-07-22 | 2007-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3939399B2 (ja) * | 1997-07-22 | 2007-07-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4180689B2 (ja) | 1997-07-24 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3844566B2 (ja) | 1997-07-30 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| GB9806609D0 (en) * | 1998-03-28 | 1998-05-27 | Philips Electronics Nv | Electronic devices comprising thin-film transistors |
| US6294441B1 (en) * | 1998-08-18 | 2001-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP2000133594A (ja) | 1998-08-18 | 2000-05-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6274887B1 (en) | 1998-11-02 | 2001-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method therefor |
| EP1020920B1 (en) | 1999-01-11 | 2010-06-02 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a driver TFT and a pixel TFT on a common substrate |
| JP2001007342A (ja) * | 1999-04-20 | 2001-01-12 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3547353B2 (ja) | 1999-11-24 | 2004-07-28 | シャープ株式会社 | 半導体装置の製造方法 |
| CN1217417C (zh) | 1999-12-10 | 2005-08-31 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US6821827B2 (en) | 1999-12-28 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US6882012B2 (en) | 2000-02-28 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method of manufacturing the same |
| TWI301907B (en) | 2000-04-03 | 2008-10-11 | Semiconductor Energy Lab | Semiconductor device, liquid crystal display device and manfacturing method thereof |
| US6706544B2 (en) * | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
| JP4588167B2 (ja) | 2000-05-12 | 2010-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4865122B2 (ja) | 2000-07-04 | 2012-02-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6613620B2 (en) | 2000-07-31 | 2003-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
| JP5046452B2 (ja) * | 2000-10-26 | 2012-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4127467B2 (ja) | 2000-11-06 | 2008-07-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW515104B (en) | 2000-11-06 | 2002-12-21 | Semiconductor Energy Lab | Electro-optical device and method of manufacturing the same |
| US6831299B2 (en) | 2000-11-09 | 2004-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4954366B2 (ja) * | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7045444B2 (en) * | 2000-12-19 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device that includes selectively adding a noble gas element |
| JP3961240B2 (ja) | 2001-06-28 | 2007-08-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2002
- 2002-02-21 JP JP2002045239A patent/JP3961310B2/ja not_active Expired - Fee Related
-
2003
- 2003-02-12 TW TW092102907A patent/TWI305958B/zh not_active IP Right Cessation
- 2003-02-13 US US10/365,911 patent/US7332385B2/en not_active Expired - Fee Related
- 2003-02-19 KR KR1020030010445A patent/KR101017225B1/ko not_active Expired - Fee Related
- 2003-02-21 CN CN2007101092706A patent/CN101075622B/zh not_active Expired - Fee Related
- 2003-02-21 CN CNB03105465XA patent/CN1329991C/zh not_active Expired - Fee Related
-
2007
- 2007-04-10 US US11/784,965 patent/US7821008B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1445853A (zh) | 2003-10-01 |
| CN101075622B (zh) | 2010-09-29 |
| CN1329991C (zh) | 2007-08-01 |
| KR20030069852A (ko) | 2003-08-27 |
| JP2003243417A (ja) | 2003-08-29 |
| CN101075622A (zh) | 2007-11-21 |
| US20070241404A1 (en) | 2007-10-18 |
| US7821008B2 (en) | 2010-10-26 |
| TW200305288A (en) | 2003-10-16 |
| JP3961310B2 (ja) | 2007-08-22 |
| US7332385B2 (en) | 2008-02-19 |
| KR101017225B1 (ko) | 2011-02-25 |
| US20030173566A1 (en) | 2003-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |