TWI256076B - Control of thermal donor formation in high resistivity CZ silicon - Google Patents
Control of thermal donor formation in high resistivity CZ siliconInfo
- Publication number
- TWI256076B TWI256076B TW091107312A TW91107312A TWI256076B TW I256076 B TWI256076 B TW I256076B TW 091107312 A TW091107312 A TW 091107312A TW 91107312 A TW91107312 A TW 91107312A TW I256076 B TWI256076 B TW I256076B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon
- high resistivity
- control
- thermal donor
- donor formation
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28310301P | 2001-04-11 | 2001-04-11 | |
US30036401P | 2001-06-22 | 2001-06-22 | |
US37132402P | 2002-04-10 | 2002-04-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWI256076B true TWI256076B (en) | 2006-06-01 |
Family
ID=27403360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW091107312A TWI256076B (en) | 2001-04-11 | 2002-04-11 | Control of thermal donor formation in high resistivity CZ silicon |
Country Status (4)
Country | Link |
---|---|
US (2) | US6897084B2 (zh) |
JP (1) | JP2004537161A (zh) |
TW (1) | TWI256076B (zh) |
WO (1) | WO2002084728A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629725B (zh) * | 2016-05-25 | 2018-07-11 | 索泰克公司 | 用於製作高電阻率半導體底材之方法 |
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JP2002524845A (ja) * | 1998-09-02 | 2002-08-06 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
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JP4405082B2 (ja) * | 1998-09-02 | 2010-01-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 内部ゲッタリング性の改良された熱アニーリングされたウエハ |
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WO2000055397A1 (fr) | 1999-03-16 | 2000-09-21 | Shin-Etsu Handotai Co., Ltd. | Procede de production d'une tranche de silicium et tranche de silicium ainsi obtenue |
US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
TWI256076B (en) | 2001-04-11 | 2006-06-01 | Memc Electronic Materials | Control of thermal donor formation in high resistivity CZ silicon |
US20020179006A1 (en) | 2001-04-20 | 2002-12-05 | Memc Electronic Materials, Inc. | Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates |
US6669777B2 (en) | 2001-12-06 | 2003-12-30 | Seh America, Inc. | Method of producing a high resistivity silicon wafer utilizing heat treatment that occurs during device fabrication |
US6673147B2 (en) | 2001-12-06 | 2004-01-06 | Seh America, Inc. | High resistivity silicon wafer having electrically inactive dopant and method of producing same |
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2002
- 2002-04-11 TW TW091107312A patent/TWI256076B/zh not_active IP Right Cessation
- 2002-04-11 US US10/120,714 patent/US6897084B2/en not_active Expired - Lifetime
- 2002-04-11 JP JP2002581577A patent/JP2004537161A/ja active Pending
- 2002-04-11 WO PCT/US2002/011558 patent/WO2002084728A1/en active Application Filing
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2005
- 2005-03-17 US US11/082,267 patent/US7135351B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI629725B (zh) * | 2016-05-25 | 2018-07-11 | 索泰克公司 | 用於製作高電阻率半導體底材之方法 |
US10163682B2 (en) | 2016-05-25 | 2018-12-25 | Soitec | Methods of forming semiconductor structures |
Also Published As
Publication number | Publication date |
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US6897084B2 (en) | 2005-05-24 |
US7135351B2 (en) | 2006-11-14 |
US20050158969A1 (en) | 2005-07-21 |
JP2004537161A (ja) | 2004-12-09 |
WO2002084728A1 (en) | 2002-10-24 |
US20030054641A1 (en) | 2003-03-20 |
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