FR3049763B1 - Substrat semi-conducteur sur isolant pour applications rf - Google Patents

Substrat semi-conducteur sur isolant pour applications rf Download PDF

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Publication number
FR3049763B1
FR3049763B1 FR1652782A FR1652782A FR3049763B1 FR 3049763 B1 FR3049763 B1 FR 3049763B1 FR 1652782 A FR1652782 A FR 1652782A FR 1652782 A FR1652782 A FR 1652782A FR 3049763 B1 FR3049763 B1 FR 3049763B1
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France
Prior art keywords
insulation
applications
semiconductor substrate
semiconductor
substrate
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Active
Application number
FR1652782A
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English (en)
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FR3049763A1 (fr
Inventor
Arnaud Castex
Oleg Kononchuk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1652782A priority Critical patent/FR3049763B1/fr
Priority to TW106109658A priority patent/TWI720161B/zh
Priority to US16/090,349 priority patent/US10886162B2/en
Priority to DE112017001617.7T priority patent/DE112017001617T5/de
Priority to JP2018550442A priority patent/JP6657516B2/ja
Priority to KR1020187030528A priority patent/KR102172705B1/ko
Priority to CN201780026817.8A priority patent/CN109075120B/zh
Priority to PCT/EP2017/057614 priority patent/WO2017167923A1/fr
Publication of FR3049763A1 publication Critical patent/FR3049763A1/fr
Application granted granted Critical
Publication of FR3049763B1 publication Critical patent/FR3049763B1/fr
Priority to US17/090,608 priority patent/US11626319B2/en
Priority to US18/192,016 priority patent/US20230238274A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Recrystallisation Techniques (AREA)
FR1652782A 2016-03-31 2016-03-31 Substrat semi-conducteur sur isolant pour applications rf Active FR3049763B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1652782A FR3049763B1 (fr) 2016-03-31 2016-03-31 Substrat semi-conducteur sur isolant pour applications rf
TW106109658A TWI720161B (zh) 2016-03-31 2017-03-23 用於射頻應用之絕緣體上半導體底材
DE112017001617.7T DE112017001617T5 (de) 2016-03-31 2017-03-30 Halbleiter-auf-lsolator-Substrat für HF-Anwendungen
JP2018550442A JP6657516B2 (ja) 2016-03-31 2017-03-30 Ｒｆ用途のための半導体オンインシュレータ基板
KR1020187030528A KR102172705B1 (ko) 2016-03-31 2017-03-30 Rf 애플리케이션들을 위한 반도체 온 절연체 기판
CN201780026817.8A CN109075120B (zh) 2016-03-31 2017-03-30 用于rf应用的绝缘体上半导体衬底
US16/090,349 US10886162B2 (en) 2016-03-31 2017-03-30 Semiconductor-on-insulator substrate for RF applications
PCT/EP2017/057614 WO2017167923A1 (fr) 2016-03-31 2017-03-30 Substrat semi-conducteur sur isolant pour applications rf
US17/090,608 US11626319B2 (en) 2016-03-31 2020-11-05 Semiconductor-on-insulator substrate for rf applications
US18/192,016 US20230238274A1 (en) 2016-03-31 2023-03-29 Semiconductor-on-insulator substrate for rf applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1652782A FR3049763B1 (fr) 2016-03-31 2016-03-31 Substrat semi-conducteur sur isolant pour applications rf
FR1652782 2016-03-31

Publications (2)

Publication Number Publication Date
FR3049763A1 FR3049763A1 (fr) 2017-10-06
FR3049763B1 true FR3049763B1 (fr) 2018-03-16

Family

ID=56511678

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1652782A Active FR3049763B1 (fr) 2016-03-31 2016-03-31 Substrat semi-conducteur sur isolant pour applications rf

Country Status (8)

Country Link
US (3) US10886162B2 (fr)
JP (1) JP6657516B2 (fr)
KR (1) KR102172705B1 (fr)
CN (1) CN109075120B (fr)
DE (1) DE112017001617T5 (fr)
FR (1) FR3049763B1 (fr)
TW (1) TWI720161B (fr)
WO (1) WO2017167923A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3049763B1 (fr) * 2016-03-31 2018-03-16 Soitec Substrat semi-conducteur sur isolant pour applications rf
EP3533081B1 (fr) * 2016-10-26 2021-04-14 GlobalWafers Co., Ltd. Substrat de silicium sur isolant à haute résistivité ayant une efficacité de piégeage de charge améliorée
FR3079662B1 (fr) * 2018-03-30 2020-02-28 Soitec Substrat pour applications radiofrequences et procede de fabrication associe
WO2020072212A1 (fr) * 2018-10-01 2020-04-09 Applied Materials, Inc. Procédé de formation de silicium rf sur dispositif d'isolation
TWI815970B (zh) 2018-11-09 2023-09-21 日商日本碍子股份有限公司 壓電性材料基板與支持基板的接合體、及其製造方法
FR3103631B1 (fr) 2019-11-25 2022-09-09 Commissariat Energie Atomique Dispositif électronique integré comprenant une bobine et procédé de fabrication d’un tel dispositif
CN110890418B (zh) * 2019-12-02 2021-11-05 中国科学院上海微系统与信息技术研究所 一种具有双埋氧层的晶体管结构及其制备方法
FR3104322B1 (fr) * 2019-12-05 2023-02-24 Soitec Silicon On Insulator Procédé de formation d'un substrat de manipulation pour une structure composite ciblant des applications rf
JP7392578B2 (ja) * 2020-06-05 2023-12-06 信越半導体株式会社 高周波半導体装置の製造方法及び高周波半導体装置
FR3119046B1 (fr) * 2021-01-15 2022-12-23 Applied Materials Inc Substrat support en silicium adapte aux applications radiofrequences et procede de fabrication associe
TWI761255B (zh) * 2021-07-08 2022-04-11 環球晶圓股份有限公司 晶圓及晶圓的製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001168308A (ja) * 1999-09-30 2001-06-22 Canon Inc シリコン薄膜の製造方法、ｓｏｉ基板の作製方法及び半導体装置
US6897084B2 (en) * 2001-04-11 2005-05-24 Memc Electronic Materials, Inc. Control of oxygen precipitate formation in high resistivity CZ silicon
US7844149B2 (en) * 2007-01-12 2010-11-30 Jds Uniphase Corporation Humidity tolerant electro-optic device
US8078565B2 (en) * 2007-06-12 2011-12-13 Kana Software, Inc. Organically ranked knowledge categorization in a knowledge management system
US7883990B2 (en) * 2007-10-31 2011-02-08 International Business Machines Corporation High resistivity SOI base wafer using thermally annealed substrate
FR2953640B1 (fr) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante
JP6228462B2 (ja) * 2011-03-16 2017-11-08 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッドＭｅｍｃ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ハンドルウエハ内に高抵抗率領域を有するシリコン・オン・インシュレータ構造体およびそのような構造体の製法
FR2973158B1 (fr) * 2011-03-22 2014-02-28 Soitec Silicon On Insulator Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences
US8536035B2 (en) * 2012-02-01 2013-09-17 International Business Machines Corporation Silicon-on-insulator substrate and method of forming
FR2999801B1 (fr) * 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
US10079170B2 (en) * 2014-01-23 2018-09-18 Globalwafers Co., Ltd. High resistivity SOI wafers and a method of manufacturing thereof
US9853133B2 (en) * 2014-09-04 2017-12-26 Sunedison Semiconductor Limited (Uen201334164H) Method of manufacturing high resistivity silicon-on-insulator substrate
FR3049763B1 (fr) * 2016-03-31 2018-03-16 Soitec Substrat semi-conducteur sur isolant pour applications rf

Also Published As

Publication number Publication date
US20190115248A1 (en) 2019-04-18
JP2019514202A (ja) 2019-05-30
FR3049763A1 (fr) 2017-10-06
CN109075120A (zh) 2018-12-21
US20210057269A1 (en) 2021-02-25
KR20180127436A (ko) 2018-11-28
DE112017001617T5 (de) 2018-12-20
TW201803015A (zh) 2018-01-16
WO2017167923A1 (fr) 2017-10-05
TWI720161B (zh) 2021-03-01
US10886162B2 (en) 2021-01-05
KR102172705B1 (ko) 2020-11-02
US11626319B2 (en) 2023-04-11
JP6657516B2 (ja) 2020-03-04
US20230238274A1 (en) 2023-07-27
CN109075120B (zh) 2023-04-07

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