JP2017146968A5 - 半導体装置、電子機器、半導体ウェハ - Google Patents

半導体装置、電子機器、半導体ウェハ Download PDF

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JP2017146968A5
JP2017146968A5 JP2017020245A JP2017020245A JP2017146968A5 JP 2017146968 A5 JP2017146968 A5 JP 2017146968A5 JP 2017020245 A JP2017020245 A JP 2017020245A JP 2017020245 A JP2017020245 A JP 2017020245A JP 2017146968 A5 JP2017146968 A5 JP 2017146968A5
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semiconductor
electronic equipment
semiconductor devices
wafers
semiconductor wafers
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JP2017020245A 2016-02-12 2017-02-07 半導体装置 Active JP6901863B2 (ja)

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JP2016024925 2016-02-12
JP2016024925 2016-02-12

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JP2017146968A JP2017146968A (ja) 2017-08-24
JP2017146968A5 true JP2017146968A5 (ja) 2020-03-19
JP6901863B2 JP6901863B2 (ja) 2021-07-14

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JP (1) JP6901863B2 (ja)
KR (1) KR20170095128A (ja)
TW (1) TWI739796B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7330950B2 (ja) 2018-04-27 2023-08-22 株式会社半導体エネルギー研究所 半導体装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109313371B (zh) * 2016-06-09 2021-09-14 夏普株式会社 显示装置及其制造方法
CN107819736B (zh) 2016-09-13 2021-12-31 现代自动车株式会社 基于车辆网络中的汽车安全完整性等级的通信方法及设备
KR102606570B1 (ko) 2017-11-29 2023-11-30 삼성디스플레이 주식회사 표시패널 및 그 제조방법
JP2020009960A (ja) * 2018-07-11 2020-01-16 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
CN112868182A (zh) * 2018-10-18 2021-05-28 株式会社半导体能源研究所 半导体装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3586880A (en) * 1969-08-11 1971-06-22 Astrodata Inc Isolation and compensation of sample and hold circuits
JPH08123584A (ja) 1994-10-19 1996-05-17 United Microelectron Corp 混合電圧装置の電圧を入出力するための自動調整装置
US5872469A (en) 1996-04-05 1999-02-16 Analog Devices, Inc. Switched capacitor circuit adapted to store charge on a sampling capacitor related to a sample for an analog signal voltage and to subsequently transfer such stored charge
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP4116133B2 (ja) * 1997-07-31 2008-07-09 株式会社東芝 温度依存型定電流発生回路およびこれを用いた光半導体素子の駆動回路
EP0997945A4 (en) * 1998-04-23 2007-08-01 Matsushita Electric Ind Co Ltd METHOD FOR DESIGNING A CIRCUIT FOR VOLTAGE SUPPLY AND SEMICONDUCTOR CHIP
JP4963144B2 (ja) * 2000-06-22 2012-06-27 ルネサスエレクトロニクス株式会社 半導体集積回路
JP4694687B2 (ja) * 2000-11-24 2011-06-08 セイコーNpc株式会社 サンプル・ホールド回路およびa/d変換器
JP2002215080A (ja) * 2001-01-22 2002-07-31 Canon Inc 電圧制御装置及び画像形成装置
JP2002351417A (ja) 2001-05-24 2002-12-06 Internatl Business Mach Corp <Ibm> 表示装置に使用されるドライバ回路の駆動電源電圧とそのドライバ回路内で階調電圧生成のために用いられる基準電圧とを生成する駆動電源回路、それら駆動電源電圧と基準電圧を生成するドライバ回路用電圧生成方法およびその駆動電源回路を備えた表示装置
JP4161551B2 (ja) * 2001-07-12 2008-10-08 富士ゼロックス株式会社 高圧電源装置
US7176742B2 (en) 2005-03-08 2007-02-13 Texas Instruments Incorporated Bootstrapped switch with an input dynamic range greater than supply voltage
JP2007325468A (ja) * 2006-06-05 2007-12-13 Toshiba Corp 電源回路
JP4929003B2 (ja) * 2007-03-23 2012-05-09 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8248114B2 (en) * 2009-10-14 2012-08-21 Semiconductor Components Industries, Llc Circuit having sample and hold feedback control and method
EP2491585B1 (en) 2009-10-21 2020-01-22 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
JP5062293B2 (ja) * 2010-05-14 2012-10-31 トヨタ自動車株式会社 サンプルホールド回路及びa/d変換装置
FR2964477B1 (fr) * 2010-09-08 2012-10-05 St Microelectronics Grenoble 2 Generateur de tension de reference pour polariser un amplificateur
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
JP5975907B2 (ja) 2012-04-11 2016-08-23 株式会社半導体エネルギー研究所 半導体装置
US9208849B2 (en) 2012-04-12 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device, and electronic device
WO2014023994A1 (en) * 2012-08-08 2014-02-13 Freescale Semiconductor, Inc. Sample-and-hold circuit, capacitive sensing device, and method of operating a sample-and-hold circuit
JP6073112B2 (ja) * 2012-11-13 2017-02-01 ルネサスエレクトロニクス株式会社 基準電圧発生回路
US9378844B2 (en) 2013-07-31 2016-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including transistor whose gate is electrically connected to capacitor
KR102071298B1 (ko) * 2013-09-30 2020-03-02 주식회사 실리콘웍스 샘플 앤드 홀드 회로 및 이를 구비하는 소스 드라이버
JP6541398B2 (ja) * 2014-04-11 2019-07-10 株式会社半導体エネルギー研究所 半導体装置
JP2016111677A (ja) 2014-09-26 2016-06-20 株式会社半導体エネルギー研究所 半導体装置、無線センサ、及び電子機器
US20160105194A1 (en) * 2014-10-10 2016-04-14 Analog Devices Technology Passive analog sample and hold in analog-to-digital converters
US9780129B2 (en) * 2015-10-07 2017-10-03 Sony Semiconductor Solutions Corporation Sample-and-hold circuit having error compensation circuit portion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7330950B2 (ja) 2018-04-27 2023-08-22 株式会社半導体エネルギー研究所 半導体装置

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