TW561635B - High flux LED array - Google Patents

High flux LED array Download PDF

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Publication number
TW561635B
TW561635B TW091123138A TW91123138A TW561635B TW 561635 B TW561635 B TW 561635B TW 091123138 A TW091123138 A TW 091123138A TW 91123138 A TW91123138 A TW 91123138A TW 561635 B TW561635 B TW 561635B
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Taiwan
Prior art keywords
emitting diode
hole
patent application
metal substrate
light
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TW091123138A
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English (en)
Inventor
Shane Harrah
Douglas Peter Woolverton
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Lumileds Lighting Llc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
    • H05K1/0206—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate by printed thermal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10106—Light emitting diode [LED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Projection Apparatus (AREA)
  • Led Devices (AREA)

Description

(i) (i)561635 玖、發明說明 (發明說明應敘明：發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) 本發明係有關發光二極體，特別係有關發光二極體 陣歹1j 。 發光二極體（LEDs)陣列可用於多種高通量（光能/單位 時間）用途，例如路燈、交通號誌及液晶顯示裝置背光 源用於此等用途。較佳增加每單位面積LED陣列提供的 通量。此種每單位面積通量的增加原則上係藉下述方 式達成，縮小陣列的各個LED間之間隔（如此增加每單 位面積陣列之LEDs數目），及/或經由增加個別LEDs提供 的通量。但任一種增加每單位面積LED之通量的辦法， 典型地也將增加每單位面積陣列必須耗散的熱量，以 防LEDs性能顯著低落。 習知類型LED陣列包括LED燈，包含一晶粒附接至模 製或澆鑄塑膠本體内部之引線框。各燈之二金屬引線 典型係焊接至常見具有習知設計之印刷電路板之導電 線路。燈之塑膠本體以及金屬引線所佔有的空間限制 陣列中燈的封裝密度。此外此等燈具典型無法耗散大 量熱量，原因在於燈產生的熱主要係經由引線及導電 線路傳導離開。結果燈具無法藉高電流驅動來產生高 通量。 另一種習知類型LED陣列，LED晶粒使用銀填補的環 氧樹脂附著於習知印刷電路板表面。典型LED晶粒係使 用接線連結電連接至印刷電路的導電線路，接線連結 限制晶粒的緊密程度。此外，晶粒附著至習知印刷電 561635
路板典型無法有效傳播LED晶粒產生的熱。如此限制LED 晶粒之最大操作電流，因而限制個別LED晶粒所能提供 的最大通量。 需要有一種高通量LED陣列，其不含先前技藝LED陣 列之缺點。 根據本發明之LED陣列包括一金屬基板、一設置於金 屬基板上方之介電質層、以及多數設置於介電質層上 方之導電線路。複數個通孔貫穿介電質層。LED陣列也 包括複數個LED。其各自係設置於對應通孔上方，其各 自包括第一電接點及第二電接點，其係電性耦合至分 開導電線路。各個通孔含有導熱材料與金屬基板作熱 接觸、且與對應LED作熱接觸。導熱材料包括例如焊料。 若干具體實施例中，通孔之導熱材料係與金屬基板 直接實體接觸、與對應LED直接實體接觸、或與金屬基 板及LED二者作直接實體接觸。此種直接實體接觸足以 建立熱接觸，但非必要。 通孔之導熱材料提供有利之低熱阻路徑讓熱由設置 於通孔上方之LED流至金屬基板，然後有效將熱量傳導 離開。結果根據本發明之陣列中的LEDs比較習知者， 可以較高電流操作，且可間隔較為緊密，而其溫度不 會升高至造成性能低劣的程度。如此，本發明LED陣列 比習知LED陣列可提供更高每單位面積通量。 若干具體實施例中，次底座設置於LED與對應通孔 間，且與通孔之導熱材料直接作實體接觸。使用此種 561635
次底座可於架設於陣列前結合LED之其它電路與測試。 圖1示意顯示根據本發明之第一具體實施例之LED陣 列部分。 圖2示意顯示根據本發明之第二具體實施例之LED陣 列部分。 圖3示意顯示根據本發明之第三具體實施例之LED陣 列部分。 圖4示意顯示根據本發明之第四具體實施例之LED陣 列部分。 圖5示意顯示根據本發明之一具體實施例LED或LED次 底座之底側。 圖6以頂視圖示意顯示根據本發明之具體實施例之 LED陣列部分。 圖7以頂視圖示意顯示圖6之LED陣列。 須注意圖式之維度無須照比例繪製。各圖中類似的 參考編號表示各個具體實施例之類似部件。 本發明之一具體實施例（圖1)中，LED陣列2包括複數 個LEDs(例如LED 4)及一金屬基板6。一層8習知導電線 路設置於金屬基板6上層之介電質層10上。複數個通孔 (例如通孔1 2)貫穿線路層8及介電質層1 0而止於金屬基 板6之上或之内。各個LEDs係設置於對應通孔之上。 LED 4可為任何適當習知發光二極體。例如LED 4可為 美國專利第6，133,589號揭示之AlInGaN LED或美國專利申 請案第09/469,657號揭示之AlInGaN LED，二案皆讓與本 561635
發明之受讓人且以引用方式併入此處。若干實施例中， LED 4為例如藉高於7〇毫安培（mA)之電流驅動的高通量 AlInGaN或AlInGaP LED。此種高通量LEDs市面上例如可得 自路米雷（LumiLeds)照明美國公司，加州聖荷西市。 LED 4包括習知N接點1 4及習知P接點1 6。圖1所示具體 · 實施例中，LED 4係安裝成「覆晶晶片」，N接點14及P 接點1 6係位於LED晶粒的同側，且定向成面對線路層8。 N接點1 4及P接點1 6係以習知再流動的焊料1 8而電連接_ 至線路層8之個別導電線路。LED 4也包括熱接點20(例 如金屬襯墊）設置於LED 4之與接點1 4及1 6之同側上，若 干實施例中，熱接點2 0係與接點1 4及1 6電隔離。此種 電隔離例如係由視需要使用之介電質層2 2提供。也使 ‘ 用其它熱接點2 0與接點1 4及1 6電隔離之手段。電接點1 4 及1 6以及熱接點2 0例如可由適當習知可焊接金屬層製 成。 通孔12含有與金屬基板6作熱接觸以及與LED 4熱接觸| 之導熱材料24。導熱材料24形成LED 4與金屬基板6間之 連續固體材料熱流動路徑之一部分，不會被例如液體 或氣體填補的間隙所間斷。圖1所示具體實施例中，導 熱材料24直接接觸LED 4之熱接點20，且直接接觸金屬 基板6。但其它具體實施例中，可無此種導熱材料24與 LED 4或金屬基板6間之直接貫體接觸而建立熱接觸。 若干實施例中，導熱材料24為或包括藉習知手段例 如網印而沉積於通孔1 2之經過再流動的焊料。此種實 561635 (5) 施例中，導熱材料2 4可為用於再流動焊料1 8之相同材 料，導熱材料24及焊料1 8可於相同製程步驟沉積且於 相同製程步騾再流動。其它實施例中，導熱材料24包 括經鑽石填補之環氧樹脂、經銀填補之環氧樹脂、或 其它習知有高黏著強度及高導熱率之材料。若干實施 例中，導熱材料2 4包括習知鍍覆於通孔1 2之金屬。此 種鍍覆金屬可填補通孔1 2例如至約線路層8高度。習知 經再流動之焊料可沉積於通孔1 2之此種鍍覆金屬上。 若導熱材料24為導電性，則可藉介電質層1 0以及視需 要使用之介電質層2 2而與線路層8及LED 4隔開。若導熱 材料2 4為可再流動之焊料，則金屬基板6與熱接點2 0間 之導熱材料24之厚度例如為約0.0002吋至約0.005吋典型 為約0.001吋。 金屬基板6例如為厚度大於約0.01叶之銅板，其視需 要地鍍覆一個焊接材料如鎳或錫來提供與導熱材料24 之良好機械接觸及熱接觸。金屬基板6也可由其它金屬 或金屬組合製成，可包括二或多金屬層。 一具體實施例中，線路層8係由經蝕刻且經鍍覆之銅 板製成，銅板使用習知電介質黏著劑例如環氧樹脂而 附著至金屬基板6，由係路層8形成介電質層1 0。通孔（例 如通孔1 2)可使用習知機器工具、電漿或化學蝕刻、或 雷射消蝕（舉例）而形成於線路層8及介電質層1 0。 LED陣列2也包括透鏡（例如透鏡2 6 )設置於若干或全部 LEDs上方俾收集且導引LED發光。此種透鏡可以透明塑 561635 _ (β\ 發明說明讀頁〗 膠或彈性體以習知方式澆鑄或模製於部分或全部LEDs 上。另外，小部分聚矽氧或類似之透明材料可以習知 方式配送至部分或全部LEDs上，然後硬化而形成簡單 透鏡；或中空透明透鏡可以習知方式熱熔、膠黏或加 壓嵌合於部分或全部LEDs上，然後填裝聚矽氧（舉例）來 封裝LEDs。 熱接點20及導熱材料24提供有利之低熱阻路徑，讓 熱由LED 4流至金屬基板6，然後有效散入。此路徑之熱 阻係低於熱路徑之熱阻，該熱路徑例如於習知成形於 印刷電路板之LED陣列之熱路徑。此種低熱阻熱路徑讓 陣列2之LEDs可於比習知電流更高之電流加熱（因而提供 比習知通量更高之通量），而未讓溫度升高至性能降低 的程度。藉導熱材料2 4及金屬基板6有效散熱，也允許 高通量LEDs以LEDs間間隔比習知高通量LEDs陣列更小的 間隔排列於LED陣列2，LEDs不會過熱而造成性能低劣。 對LED陣列2之各個LED而言，不存在有分開模製殼體、 引線框、及接線連結至線路層8導電線路，也讓LEDs的 間隔變更緊密。結果LED陣列2提供每單位面積通量大 於習知LED陣列之每單位面積通量。本具體實施例中免 除接線陣列也改善LED陣列2之可靠度，接線陣列典型 為LED陣列中之最不可靠的元件。 本發明之第二具體實施例（圖2)中，LED陣列2之各個 LEDs(例如LED 28)係附著於分開次底座（例如次底座 3 0)。次底座例如可由矽或陶瓷材料製成。習知經再流 (7) (7) 561635 mmwmi 動的焊料（例如错/和、几％ 、^ ’Ό )凸塊^2電連接LED 28 N型區至次底 座3 0之頂N接·％ 3 4，ff泰、杰r ， 私連接LED 28之P型區至次底座30 之頂P接點36« ;亡虎虚qa、 - <通孔3 8及4 0含有習知導電材 料（例如鎢及/或銅），導雨 、 导％材枓載運電流分別由頂N接點 3 4及頂P接點3 6至底N接愛占4 2 ；5庇4.、 ·、 2及展p接點4 4。N接點4 2及 P接點44係使用習知經具、、云 白 再4動足焊料1 8而電連接至線路 層8之分開線路。芸/士念+，Λ ~ 展座3 0係由導電材料如矽製成， 例如通孔3 8及4〇包括習知 、 、 〜、J 兒貝官或靦墊來防止 通孔經由次底座短路。 次底座3〇也包括設置於次底座底㈣^電接點 42及44(熱接點46(例如金屬襯塾）。若干實袍例中，熱 接點46係於接點42及44電隔離。 匕種笔隔離例如可由 視需要使用之介電質層4 8提供。 ^ ^ 也可使用其它讓熱接 點46與接點42及44電隔離之手段。+ ^ 人·卞仅。電接點34、36、42 及4 4以及熱接點4 6可以習知方式 十万武例如由習知可焊接金 屬層製成。 本具體實施例中，通孔1 2之導埶砧』· ,. <令或材料24係與次底座30 上万的熱接點46直接接觸，而經由、A 、> 由，欠底座3 0及焊料凸 塊32與LED 28作熱接觸。若干實施丫 丁 $她例中，用於導熱材料 24足再流動焊料，其再流動 、 ， 751更比用於焊料凸塊32 足再流動焊料之再流動溫度更低 又文他，讓次底座3 〇附著至 ·.屬基板6而未干擾LED 28與次底座3〇間之烊料連結。 :型地’次底座3〇之厚度薄’且由導熱材料製成，俾 低次底座30對熱量由LED 28流至金屬基板6之流動提 -12- 561635
供熱阻。例如矽製成之次底座典型厚度係小於0.010吋。 焊料凸塊3 2、次底座3 0、熱接點4 6及導熱材料2 4之 組成提供低熱阻路徑讓LED 28流至金屬基板6。此種低 熱阻路徑提供類似前一具體實施例的優點。此外，安 裝於次底座上的LEDs可於架設於LED陣列2之前預先測 試，此種前測試讓LED陣列2之LEDs係基於例如發射波 長及通量等經過明確界定的值作選擇。又次底座可包 括額外對LED陣列2有利的電路，例如靜電放電保護電 路。 本發明之第三具體實施例（圖3 )中，不存在有通孔3 8 及4 0，次底座3 0上的N接點3 4及P接點3 6分別係藉接線 連結4 8及5 0連接至線路層8之分開線路。接線連結4 8及 5 0比經由通孔作電連結的製造上價廉。 本發明之第四具體實施例（圖4)中，線路層8及介電質 層1 0係含括於薄層習知印刷電路板或軟式電路5 2，印 刷電路板或軟式5 2使用習知介電質黏著層5 4而附著至 金屬基板6。另一層介電質層56可覆於線路層8上。通 孔例如可藉衝孔形成於印刷電路板5 2。 圖5示意顯示根據本發明之一具體實施例，含括於LED 陣列之LED總成5 8底側上之電接點及熱接點之配置。LED 總成5 8包括例如不含次底座之LED例如LED 4(圖1)、或 附著至次底座之LED例如附著至次底座30之LED 28(圖 2、3、4)。N接點6 0例如可為LED 4之N接點1 4或次底座 3 0之底N接點42。P接點62例如為LED 4之P接點1 6或次 561635 (9) 底座3 0之底P接點4 4。熱接點6 4例如為LED 4之熱接點2 0 或次底座3 0之熱接點4 6。熱接點6 4典型佔有LED總成5 8 底面之大比例俾促成熱量由熱接點64流至金屬基板6。 1 一6示意顯示於多個位置6 6 -1 - 6 6 - 9架設LED總成（含 或不含次底座之LEDs)前，裉據本發明之一具體實施例 之LED陣列2之頂視圖。於各個位置，通孔（例如通孔ι2) 暴露出部分金屬基板6。此外於各個位置，導電線路8_ 1 - 8 -1 8 (線路層8)之二暴露出而與LED總成底側之分開電 接點’例如LED總成5 8電接點6 0及6 2 (圖5 )作電接觸。導 電線路8-1-8-18可而讓部分或全部LEDs串聯、並 聯、或反並聯。貫穿孔例如貫穿孔6 8貫穿金屬基板6及 覆於金屬基板6上方之介電質層及線路層，讓透鏡例如 透鏡26(圖1)填裝封裝劑（例如聚矽氧）。 圖7以頂視圖示意顯示LED總成58 -卜58-9附著至金屬 基板6以及導電線路8-1 - 8-16後，圖6之LED陣列2。各 個LED總成係經由沉積於位在LED總成下方之通孔的導 熱材料24(圖1-4)而與金屬基板6作熱接觸。本具體實施 例中’ LED陣列2包括9個LED總成（帶有或未帶有次底座 之LEDs)。其它具體實施例可含多於或少於9個led總成。 雖然已經以特定具體實施例說明本發明，但本發明意圖 涵蓋全部落入隨附之申請專利範圍内之全部變化與修改。 例如雖然圖1-4所示LEDs 4及28為覆晶晶片，但本發明可採 用LED頂側有一或多個電接點之LEDs。此種接點例如可以 接線連結至次底座上的電接點、或接線連結至覆於金屬基 -14-
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板上方線路層之導電線路。此外，雖然圖2 - 4只顯示一個LED 附著至各個次底座，但若干具體實施例可採用每個次底座 有多於一個LED。此種具體實施例中，一個次底座上的多 個LEDs可部分或全部電連結例如串聯、並聯或反並聯。此 外，根據本發明之LED陣列可包括部分LEDs設置於次底座 上，而部分LEDs係直接附著至金屬基板。雖然圖卜4只顯 示一層8導電線路設置於金屬基板6上方，其它具體實施例 可採用多層導電線路。
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Claims (1)

  1. 561635 拾、申請專利範圍 1. 一種發光二極體陣列，包含： 一金屬基板； 一介電質層，複數個通孔貫穿該介電質層，該介 電質層係設置於該金屬基板上； 複數個設置於該介電質層上之導電線路；以及 複數個發光二極體，其各自係設置於對應通孔上方， 及其各自包括第一電接點及第二電接點，該第一電接點 及該第二電接點係電性耦合至分開的導電線路； 其中該等通孔各自含有導熱材料與金屬基板作熱 接觸，且與對應發光二極體作熱接觸。 2. 如申請專利範圍第1項之發光二極體陣列，其中該金 屬基板具有大於約0.01吋之厚度。 3. 如申請專利範圍第1項之發光二極體陣列，其中發光 二極體中至少一者包括第一電接點以及第二電接 點，其係設置於該金屬基板之同側上且係定向成面 對該金屬基板。 4. 如申請專利範圍第1項之發光二極體陣列，其中至少 一個通孔的導熱材料係與複數個導電線路作電隔 離，且與對應發光二極體之第一及第二電接點作電 隔離。 5. 如申請專利範圍第1項之發光二極體陣列，其中該導 熱材料包括焊接劑材料。 6. 如申請專利範圍第1項之發光二極體陣列，其中至少 561635 l_ wm 一個通孔之導熱材料係與對應發光二極體直接接 觸。 7. 如申請專利範圍第1項之發光二極體陣列，其中至少 一個通孔之導熱材料係與金屬基板直接接觸。 8. 如申請專利範圍第1項之發光二極體陣列，進一步包 含一次底座設置於發光二極體與一對應通孔之間， 且與對應通孔之導熱材料直接接觸。 9. 如申請專利範圍第8項之發光二極體陣列，其中該次 底座包括矽。 10. 如申請專利範圍第8項之發光二極體陣列，其中該次 底座包括通孔，經由通孔，其中一發光二極體之第 一電接點及第二電接點電性耦合至導電線路。 11. 一種製造發光二極體陣列之方法，該方法包括： 於一金屬基板上方設置一介電質層，於該介電質 層上，製造複數個導電線路； 於該介電質層成形複數個通孔，該等通孔各別暴 露金屬基板； 於各個通孔内部，導入導熱材料，該導熱材料係 與金屬基板作熱接觸； 設置複數個發光二極體，各自設置於對應通孔上 方，讓各個發光二極體與對應通孔之導熱材料作熱 接觸；及 對各個發光二極體，電性耦合第一電接點及第二 電接點至分開的導電線路。 561635 wmwMm 12. 如申請專利範圍第1 1項之方法，其中該金屬基板具 有大於約0.01吋之厚度。 13. 如申請專利範圍第1 1項之方法，進一步包含電絕緣 於至少一個通孔之導熱材料與複數個導電線路，且 與對應發光二極體之第一及第二電接點作電絕緣。 14. 如申請專利範圍第1 1項之方法，進一步包含將焊接 劑材料導入其中至少一個通孔内部。 15. 如申請專利範圍第1 1項之方法，進一步包含設置至 少一個發光二極體，讓該發光二極體係與對應通孔 内的導熱材料直接接觸。 16. 如申請專利範圍第1 1項之方法，其中至少一個通孔 之導熱材料係與金屬基板直接接觸。 17. 如申請專利範圍第1 1項之方法，進一步包含設置一 次底座於其中一發光二極體與對應通孔之間，且與 於對應通孔之導熱材料直接接觸。 18. 如申請專利範圍第1 7項之方法，進一步包含由矽製 成該次底座。 19. 如申請專利範圍第1 7項之方法，進一步包含形成通孔於 該次底座，經由通孔，其中一發光二極體之第一電接點 及第二電接點電性耦合至導電線路。
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