TW479374B - Optical semiconductor-device with multiple-quantum-pot structure - Google Patents

Optical semiconductor-device with multiple-quantum-pot structure Download PDF

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TW479374B
TW479374B TW089123809A TW89123809A TW479374B TW 479374 B TW479374 B TW 479374B TW 089123809 A TW089123809 A TW 089123809A TW 89123809 A TW89123809 A TW 89123809A TW 479374 B TW479374 B TW 479374B
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gallium
nitride
indium
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Volker Haerle
Berthold Hahn
Hans-Juergen Lugauer
Helmut Bolay
Stefan Bader
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Osram Opto Semiconductors Gmbh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
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Description

479374 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（1 ) 本發明涉及一種具有多重-量子井結構之光學半導體 元件，其中各井層及截止層由不同形成之半導體層交替 地塗佈著。 此種元件例如由EP 0 666 624 B1或Journal of •Crystal Growth 1 89 / 1 90 ( 1 998 )page 786- 789 中已爲人 所知。 以銦-鎵-氮化物（Gal nN-)爲主之LEDs或雷射二極體之 高量子效率是由活性量子井中富含銦之各之自我組構式 之生長所造成。已注入之電荷載體在空間上局部化於這 些島中且由晶格缺陷中之非輻射之重組區 (recombination)所擋住。 這些量子點之核作用（nuc 1 ea t i on )須藉由適當之緩衝 層來導入。特別是含有銦之結構適合在特定之活性.區之 前作爲緩衝層。含銦之氮化物半導體（GaxAlyIni.(x + y) N-半導體（易於分解且形成含銦之相（phase)。這樣會在 生長表面上造成可改變之應力場，於是在活性量子井中 可促進含銦之各島之形成。大約lOOnm厚之Gal nN層可沈 積在活性區之前以便改良Ga I UN量子點之核作用。 目前已可以4重-量子井結構來達成一種最佳化之效率 。如實驗中所示，所發出之光子只在二個最上方（即， P-側之下一個）量子井中產生。適當地選取各生長參數 時可使此種發射現象只在最上方之量子井中發生。下方 之各量子井用來改良最上方之GalnN-島之核作用。若省 略最上方之量子井，則光學輸出功率下降値超過50%。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 479374 A7 B7 五、發明説明（ 這些量子井當然會使前向電壓大大地升高。此種前向電 壓可藉由井數目之減少（量子效率亦降低）而改進。壓電 場（其使所觀測到之前向電壓增大）可藉由量子井之區域 中較大之摻雜度而被抑制。當然此活性層之晶體品質會 因此而受到干擾，使內部之量子效率降低。 本發明之目的是改良本文開頭所述形式之光學半導體 元件。 此目的以申請專利範圍第1項之特徵來達成。本發明 之一些形式描述在申請專利範圍各附屬項中。 本發明以下將依據實施例藉助於圖式來詳述。 圖式簡單說明： 第la，b圖本發明之元件之層構造之圖解。 第2圖是第1圖之元件之量子井結構之圖解。 第3圖一般形式之量子井結構之圖解。 經濟部智慧財產局員工消費合作社印製 依據第la圖，在由碳化矽（S:C)所構成之基板1(其上 連接一個電極2)上首先形成一種由鋁-鎵-氮化物 (AlGaN)所形成之緩衝層3。其上又形成另一由鋁-鎵-氮 化物所構成之層4。層4上方配置另一由矽所摻雜之氮化 鎵所構成之緩衝層5，層5上方配置一種仍將詳述之量子 井結構6 a，b，其上是一種特定之活性層6 c。活性層6 c 上方是另一由鋁-鎵-氮化物所構成之層7，其用作電極 位·障。此層7較佳是以鎂來摻雜。在層6和7之間配置另 鎵層8上 一未顯示之GaN層。在層7上方配置一種鎵層 設置此元件之另一電極9。 -4- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 479374 A7 B7 五、發明説明（ 經濟部智慧財產局員工消費合作社印製 此種層結構之右側顯示價帶和導電帶之間各層之能帶 間隙。 緩衝層3之功能是用作生長層，這是需要的，以便可在 碳化矽-基板1上生長LED-結構。此層3和5之間之鋁-鎵-氮化物層4具有一種在氮化鎵層5之方向中改變之鋁含量 。氮化鎵層5最好以矽來摻雜且用來生長一些缺陷。在活 性層6上方所配置之由鎂摻雜之鋁-鎵-氮化物所構成之 層7用作電極位障。 第la圖之基本構造基本上可用作鋁-鎵-氮化物（LEDs)。 第1 b圖是本發明活性層6之已放大之圖解。構成一種 具有量子井結構6之層時，其過程是在各別之氮化鎵 (GaN)層6b之間配置由鎵-銦-氮化物（GalnN)所構成之層 6a。由鎵-銦-氮化物（GalnN)所構成之特定之活性.(即， 發光）層6c緊接於最上方之氮化鎵層。 如圖所示，不同厚度之各層6a，6b交替地配置著。由 銦-鎵-氮化物所構成之較薄之層6a以及由氮化鎵所構成 之較厚之層6b因此形成一種超晶格，其中各井6a較薄， 即，較3nm還薄且各層6b是5nm厚或更大。各層之製造是 藉由氣相磊晶法或分子束磊晶法來達成。因此是在700°C 左右之低溫中進行一種1 - 2nm/分鐘之較慢之生長。銦 之分壓較低約30%。 銦之含量小於24%，但最好小於20%，因此是較一般 之銦含量還少。圖中只顯示一次之各層6a，6b可互相重 疊很多次。此種結構X較佳是重複3次。最上方之氮化鎵 請 先 閱 讀 背 之 注 意 事 項 再 填 頁 訂 Μ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） 479374 A7 _B7___ 五、發明説明（） 層6b上是一種特定之活性（即，發光）層6c(由銦-鎵-氮 化物所構成）。 較佳之設計方式是：以濃度1017至1018cm_3之矽來對 鲁 此量子井結構6a，6b進行摻雜。這樣相對於未摻雜之結 .構而言，又可再一次地大大地改良其特性。 第2圖是價帶VB和導電帶CB之能階特性。縱座標是電 子能量，橫座標是量子井之寬度（其對應於層厚度）。實 際之活性層6c緊接於最上方之氮化鎵層6b。 第2b是一種價帶能階圖，其由鎵-銦-氮化物所構成之 量子井之厚度較本發明者還大。由斜線所示者是壓電場 之效應，其是由應力所產生。 相對於第3圖之結構而言，本發明中較薄之由鎵-銦-氮化物所構成之層可達成一種有效之應力分解作用。 由於在第1圖之層結構及第2圖之量子井特性中本發明 使用此種具有較薄之井（量子井之寬度大約lnm)之Gal nN /GaN-超晶格，則前向電壓可大大地下降且此種以銦-鎵-氮化物爲主之光學半導體元件可保持很高之內部量子 效率。所產生之壓電場可完全被防止或實際上已不會有 作用。相較於傳統之單一量子井結構（其中在活性井之 前不沈積此種鎵-銦-氮化物-超晶格）而言，本發明之元 件結構顯示一種雙倍之轉換效率。與習知之超晶格結構 比較，本發明此種元件結構之前向電壓下降之値>0.5V。 一般人所了解之超晶格是一種只由幾個原子層厚之層 所構成之序列。此種超晶格藉由GaN位障而與活性井相 -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 請 先 閲 讀 背 之 注 意 事 項 再
訂 經濟部智慧財產局員工消費合作社印製 479374 A7 _B7__ 五、發明説明（5 ) 隔開（>5nm)。量子井結構之矽-摻雜作用較未摻雜之結 構中者已大大地改良。相對於SQN結構（在其活性量子井 之前未沈積GalnN超晶格）而言轉換效率可變二倍。 藉由薄的（即，銦含量很少）光學非活性量子井㈧^-wb 1 1 s )與活性量子井6 c之組合，則可獲得目前習知之多 重-量子井結構之發射特性且可使前向電壓下降。薄的 GalnN-量子井可改良活性量子井之品質，由於"Pre-wells"很小之 層厚度 及其很低之銦含量， 則可防止干擾 壓電場之形成。前向電壓不會由於此種核作用層而增大。 經濟部智慧財產局員工消費合作社印製 號之說明 1..... .基板 2..... .電極 3,5... .緩衝層 4,7… .層 6,6c.. ..活性層 6a , 6b. ...量子井結構 8..... .鎵層 9..... .電極 VB.... .價帶 CB.… .導電帶 -7- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）

Claims (1)

  1. 479374 A8 B8 C8 D8 六、申請專利範圍 1.一種具有多重-量子井結構之光學半導體元件，由不 同形式之半導體層所構成之井層和截止層交替地配置著 ，其特徵爲：各井層（6a)是較薄之鎵-銦-氮化物層，各 截止層（6b)是較厚之氮化鎵層，由鎵-銦-氮化物（6c)所構 成之活性層量子井鄰接於最上方之截止層（6b)，由各井層 (6a)及各截止層（6b)而形成超晶格。 2 .如申請專利範圍第1項之光學半導體元件，其中各井層 (6a)較3nm還薄且各截止層（6b)是5nm厚或更厚。 請 先 閱 讀 背 \δ 之 注 意 I 頁 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ：297公釐）
TW089123809A 1999-11-19 2000-11-10 Optical semiconductor-device with multiple-quantum-pot structure TW479374B (en)

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DE19955747A DE19955747A1 (de) 1999-11-19 1999-11-19 Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur

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Publication number Priority date Publication date Assignee Title
US8043977B2 (en) 2005-08-08 2011-10-25 Showa Denko K.K. Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
US8222674B2 (en) 2005-08-08 2012-07-17 Showa Denko K.K. Semiconductor device having a group-III nitride superlattice layer on a silicon substrate

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EP1145331A2 (de) 2001-10-17
US7556974B2 (en) 2009-07-07
CA2360502A1 (en) 2001-05-31
US20050116216A1 (en) 2005-06-02
KR20010101598A (ko) 2001-11-14
JP4681186B2 (ja) 2011-05-11
KR100722031B1 (ko) 2007-05-25
JP2003515936A (ja) 2003-05-07
KR100799793B1 (ko) 2008-01-31
EP1145331B1 (de) 2013-07-17
DE19955747A1 (de) 2001-05-23
JP5361845B2 (ja) 2013-12-04
US20060289854A1 (en) 2006-12-28
KR100889144B1 (ko) 2009-03-16
WO2001039282A3 (de) 2001-12-06
KR20070009725A (ko) 2007-01-18
WO2001039282A2 (de) 2001-05-31
US6849881B1 (en) 2005-02-01
JP2011035433A (ja) 2011-02-17
US7106090B2 (en) 2006-09-12

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