KR100722031B1 - 멀티플 양자 웰 구조를 갖는 광 반도체 장치 - Google Patents
멀티플 양자 웰 구조를 갖는 광 반도체 장치 Download PDFInfo
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- KR100722031B1 KR100722031B1 KR1020017009087A KR20017009087A KR100722031B1 KR 100722031 B1 KR100722031 B1 KR 100722031B1 KR 1020017009087 A KR1020017009087 A KR 1020017009087A KR 20017009087 A KR20017009087 A KR 20017009087A KR 100722031 B1 KR100722031 B1 KR 100722031B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
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- Optics & Photonics (AREA)
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- Power Engineering (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (15)
- 멀티플 양자 웰 구조를 갖는 광 반도체 장치로서,교대하는 웰 층들(6a) 및 배리어 층들(6b)로 이루어진 적어도 하나의 조합을 포함하고, 상기 웰 층들(6a) 및 상기 배리어 층들(6b)은 모두 여러 반도체 층들을 포함하며, 상기 웰 층들(6a)은 제 1 전자 에너지를 갖는 질화물 반도체 재료를 기반으로 하는 제 1 조성물을 포함하며, 상기 배리어 층들(6b)은 상기 제 1 전자 에너지보다 높은 전자 에너지를 갖는 질화물 반도체 재료의 제 2 조성물을 포함하고,상기 광 반도체 장치는 방사 활성 양자 웰 층(6c)을 포함하며, 상기 웰 층들(6a) 및 배리어 층들(6b)은 상기 방사 활성 양자 웰 층(6c)을 위한 초격자를 형성하고,상기 제 1 조성물로 이루어진 상기 웰 층들(6a)은 상기 방사 활성 양자 웰 층(6c) 아래에 배치된 비방사성 웰 층들인,광 반도체 장치.
- 제 1항에 있어서,상기 웰 층(6a)이 얇은 알루미늄-인듐-갈륨 질화물 층이고, 상기 층에 비해 상기 배리어 층(6b)은 더 두꺼운 갈륨 질화물 층 또는 알루미늄-갈륨 질화물 층이며, 상기 방사 활성 양자 웰 층(6c)은 인듐-갈륨 질화물 층인, 광 반도체 장치.
- 제 1항 또는 제 2항에 있어서,상기 방사 활성 양자 웰 층(6c)이 상기 최상부의 배리어 층(6b)에 연결되는, 광 반도체 장치.
- 제 1항 또는 제 2항에 있어서,상기 방사 활성 양자 웰 층(6c)의 두께가 상기 초격자의 웰 층(6a)의 두께보다 더 큰, 광 반도체 장치.
- 제 1항 또는 제 2항에 있어서,상기 웰 층(6a)은 2nm보다 얇고, 상기 배리어 층(6b)의 두께는 3nm이상인, 광 반도체 장치.
- 제 2항에 있어서,상기 웰 층 및 상기 배리어 층(6a, 6b)이 실리콘으로 도핑되는, 광 반도체 장치.
- 제 6항에 있어서,도펀트 농도가 1017 내지 1018 cm-3인, 광 반도체 장치.
- 제 1항 또는 제 2항에 있어서,상기 초격자의 적어도 하나의 웰 층(6a) 내부에서 In-함량이 성장 방향인 방사 활성 양자 웰 층(6c)의 방향으로 증가하는, 광 반도체 장치.
- 제 8항에 있어서,상기 웰 층(6a) 내 인듐 함량이 상기 방사 활성 양자 웰 층으로부터 5% 미만의 차이를 나타내는, 광 반도체 장치.
- 제 1항 또는 제 2항에 있어서,상기 초격자의 적어도 하나의 웰 층(6a)이 적어도 한 쌍의 단층(60a, 61a)을 가지며, 상기 단층들 중 성장 방향으로 볼 때 제 1 단층(60a)은 제 2 단층(61a)보다 낮은 인듐 함량을 갖는, 광 반도체 장치.
- 제 10항에 있어서,상기 제 2 단층(61a)이 상기 제 1 단층(60a)보다 5% 이하로 더 높은 인듐 함량을 갖는, 광 반도체 장치.
- 제 10항에 있어서,상기 웰 층이 다수의 단층(60a, 61a, 62a, 63a)을 가지며, 상기 단층들의 인듐 함량은 방사 활성 양자 웰 층(6c)으로부터 가장 멀리 떨어져있는 단층(60a)으로부터 상기 방사 활성 양자 웰 층(6c)에 가장 가까이 놓인 단층(63a) 쪽으로 단계적으로 증가하는, 광 반도체 장치.
- 제 12항에 있어서,상기 인듐 함량의 증가 정도는 5% 미만인, 광 반도체 장치.
- 제 10항에 있어서,상기 방사 활성 양자 웰 층(6c)으로부터 가장 멀리 떨어져있는 단층(60a)의 인듐 함량이 5% 미만인, 광 반도체 장치.
- 제 10항에 있어서,상기 각각의 단층(60a, 61a, 62a, 63a)의 두께는 소수의 단분자층의 범위의 값을 갖거나, 1개의 단분자층의 두께와 동일한, 광 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19955747A DE19955747A1 (de) | 1999-11-19 | 1999-11-19 | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
DE19955747.0 | 1999-11-19 |
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KR1020067024995A Division KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
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Publication Number | Publication Date |
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KR20010101598A KR20010101598A (ko) | 2001-11-14 |
KR100722031B1 true KR100722031B1 (ko) | 2007-05-25 |
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KR1020077024702A KR100889144B1 (ko) | 1999-11-09 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
KR1020067024995A KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
KR1020017009087A KR100722031B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
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KR1020077024702A KR100889144B1 (ko) | 1999-11-09 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
KR1020067024995A KR100799793B1 (ko) | 1999-11-19 | 2000-11-20 | 멀티플 양자 웰 구조를 갖는 광 반도체 장치 |
Country Status (8)
Country | Link |
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US (3) | US6849881B1 (ko) |
EP (1) | EP1145331B1 (ko) |
JP (2) | JP4681186B2 (ko) |
KR (3) | KR100889144B1 (ko) |
CA (1) | CA2360502A1 (ko) |
DE (1) | DE19955747A1 (ko) |
TW (1) | TW479374B (ko) |
WO (1) | WO2001039282A2 (ko) |
Cited By (2)
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KR100957750B1 (ko) | 2008-08-12 | 2010-05-13 | 우리엘에스티 주식회사 | 발광 소자 |
KR20170014955A (ko) * | 2015-07-31 | 2017-02-08 | 엘지전자 주식회사 | 디스플레이 장치 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10242512A (ja) * | 1997-02-24 | 1998-09-11 | Toshiba Corp | 半導体発光装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100957750B1 (ko) | 2008-08-12 | 2010-05-13 | 우리엘에스티 주식회사 | 발광 소자 |
KR20170014955A (ko) * | 2015-07-31 | 2017-02-08 | 엘지전자 주식회사 | 디스플레이 장치 |
KR102328945B1 (ko) * | 2015-07-31 | 2021-11-19 | 엘지전자 주식회사 | 디스플레이 장치 |
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US7556974B2 (en) | 2009-07-07 |
KR20070116157A (ko) | 2007-12-06 |
DE19955747A1 (de) | 2001-05-23 |
CA2360502A1 (en) | 2001-05-31 |
KR100889144B1 (ko) | 2009-03-16 |
US20060289854A1 (en) | 2006-12-28 |
US20050116216A1 (en) | 2005-06-02 |
JP2003515936A (ja) | 2003-05-07 |
EP1145331B1 (de) | 2013-07-17 |
US6849881B1 (en) | 2005-02-01 |
JP5361845B2 (ja) | 2013-12-04 |
WO2001039282A3 (de) | 2001-12-06 |
KR20010101598A (ko) | 2001-11-14 |
KR20070009725A (ko) | 2007-01-18 |
WO2001039282A2 (de) | 2001-05-31 |
EP1145331A2 (de) | 2001-10-17 |
US7106090B2 (en) | 2006-09-12 |
KR100799793B1 (ko) | 2008-01-31 |
TW479374B (en) | 2002-03-11 |
JP2011035433A (ja) | 2011-02-17 |
JP4681186B2 (ja) | 2011-05-11 |
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