TW322611B - - Google Patents
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- Publication number
- TW322611B TW322611B TW085114590A TW85114590A TW322611B TW 322611 B TW322611 B TW 322611B TW 085114590 A TW085114590 A TW 085114590A TW 85114590 A TW85114590 A TW 85114590A TW 322611 B TW322611 B TW 322611B
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Description
經濟部中央標準局員工消費合作社印製 A7 _B7五、發明説明(i ) 〔技術領域〕 本發明,係關於半導體裝置及其製造方法,特別係, 有關適用於有優異的散熱性及可靠性之L S I封裝的半導 體裝置有效之技術。 〔習知技藝〕 近年來的最先進邏輯元件,係根據動作頻率之高頻化 ,信號的多數元化而達成高速化。可是,根據半導體晶方 之高性能化而銷數增加時,在原有的封裝如有引出框之封 裝,將根據引出框加工的界限受到限制,而使封裝尺寸會 變大。於是在把封裝安裝到安裝基板時,封裝和其外簧片 佔有安裝基板之面積會增加,而使機能高集體化的優點會 減半。並且,根據高性能化之動作頻率的提高,根據高集 體化之閘數的增加而消耗電力會增大。由於如此地從半導 體晶方將發生大量之熱,隨著多銷化因應同時低熱阻封裝 構造的開發成爲不可或缺。在習知之封裝,未充份採取從 半導體晶方發生的熱之散熱對策•在特開平5 — 3 2 6 6 2 5號公報,記載有解決此問題的第1技術。此 係,把在電路面全面有連接端子之半導體晶方(L S I ) 在載子基板以面朝下安裝,而將半導體晶方和載子基板的 間隙以密封樹脂完全充填。並且,在半導體晶方之背面設 有散熱器(heat spreader) * 第二技術,係記載在特開平6 — 2 2 4 2 4 6號公報 •該封裝,包含有放入設有多數的合接墊之半導體晶方的 (請先閱讀背面之注意事項再填寫本頁) -裝· 訂---
In · 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) A7 B7 3226 五、發明説明(2 ) (請先閲讀背面之注意事項再填寫本頁) 空涧之導電基板及層合在導電基板上的可撓電路。在此, 將包含配線圖型和形成在電路之表面墊的堆(bump)之領 域陣列。同時,在墊下方,包含通過可撓電路的多數之開 口,對接地和基板的配線圖型之軌跡。對基板的可撓電路 之層合,係使用使開口加在基板的接地墊之電連接成爲容 易的導電黏著劑。 第三技術,係記載在特開平4一 1 1 9 6 5 3號公報 。其特徵爲,在金屬板上設置半導體晶方,如包圍前述晶 方地將絕緣體層合在前述金屬板的構成,用以得到和裝配 基板等之外部電路通電,而在前述絕緣體表面形成有配線 簧片圖型。 經濟部中央標準局員工消費合作社印製 第四技術,係記載在特開平5-8 2 5 6 7號公報。 此係,根據具有在中央部設孔的陶瓷等而成之基板,和將 連接在該基板的Τ Α.Β — L S I片結(die-bonding)而 密封之蓋,和在前述基板和TAB — L S I之間,如將基 板的孔封閉地充填之密封樹脂,根據在TAB - L S I的 片結注入密封樹脂而在TAB — L S I加壓,將完全進行 TAB — L S I之片結,且使TAB-L S I的電路面全 體根據密封樹脂覆蓋。 第五技術,記載在日經Electronics,1 9 9 4年2 月2 8日發行,第6 0 2號。此係,散熱片或蓋和半導體 晶方(LS I晶方)以散熱用黏著劑黏著,根據TAB帶 把半導體晶方和焊錫端子連接》前述ΤΑ B帶和半導體晶 方係以浮片(flip-chip)連接進行,而TAB帶和半導 私紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -5 - 經濟部中央榡準局員工消費合作社印製 A7 ____B7_ 五、發明説明(3 ) 體晶方之間係以密封用樹脂密封•封裝全體的支持,係把 散熱片或蓋和ΤΑ B帶以黏著劑黏著在固定板而進行。 可是,此等從第一至第五技術,也無法解決把散熱特 性優先時可靠性會降低,而把裝配後的可靠性優先時,則 不能得到大之散熱特性的散熱特性和可靠性之相反關係。 亦即,高散熱特性,係依存晶方一封裝間的熱阻,封 裝一空氣間之熱阻。因此,爲了得到高散熱特性,晶方和 封裝間的黏著劑,及其材料皆必須使用導熱性高者》可是 ,只使用滿足上述條件的材料,也不能提高封裝之可靠性 。亦即,已由本發明者證明以前述從第一至第五技術所述 的封裝構造,對晶方動作時和晶方對裝配基板之裝配時發 生之對根據熱的熱應力之對應並不充份。 本發明之目的,係在提供能使髙散熱特性和高可靠性 兩立的多銷化對應之半導體裝置。本發明之其他目的,係 在提供更特別適合適用在B G A型封裝者》 本發明之上述及其他目的和新特徵,將在本說明書之 記述及附圖顯示。 〔發明之揭示〕 本發明的半導體裝置,係半導體晶方將在和半導體晶 方熱膨脹係數接近之散熱片的一面以金屬接合黏著。該散 熱片,係和框體根據彈性係數爲1 OMP a以下的矽系之 黏著劑黏著。同時在前述框體,有ΤΑ B帶經由環氧系等 有機材系的黏著劑黏著。前述ΤΑ B帶係和半導體晶方之 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) ----1 *—ί I--ii^ —I--- - 訂--Γ----線--------- I (請先閱讀背面之注意事項再填寫本頁) 6 經濟部中央標準局員工消費合作社印製 322611 A7 B7 五、發明説明(4 ) 電極電性連接。前述半導體晶方,將以從外部的保護爲目 的以彈性率爲1OGPa以上之環氧系密封樹脂密封。 〔實施例〕 爲了將本發明更詳述,將根據附圖將之說明。再者, 在用以說明實施例的全圖,具有相同機能者將附以相同記 號,而省略重複之說明。 第1實施例 圖1爲顯示本實施例的半導體裝置之斷面圖(沿圖2 的a - a >線之斷面圖),圖2爲該半導體裝置之平面圖 〇 本實施例之半導體裝置,具有BGA (Ball Grid Array)型的封裝構造。該封裝,係根據在矽基板之主面 形成閘陣列等邏輯L S I的半導體晶方1 ’包圍半導體晶 方1之框體(stiffener) 3 ,使在半導體晶方1發生的 熱散發至外部之散熱片4 ’將半導體晶方1從外部環境保 護的密封樹脂8,在一面形成配線10之TAB帶9及外 部引出用電極的焊錫堆7構成。構成封裝的各構件之厚度 ,做爲一例係半導體晶方1爲〇. 28〜0 55mm, 框體3爲0_ 10〜〇. 60mm’散熱片4爲0_ 10 〜1. 00mm ’TAB 帶 9 爲 0. 05 〜 〇 125mm。同時,焊錫堆7的直徑爲0· 3〜 〇.9mm。 本紙張尺度適用中國國家標準(CNS ) A4規格€ 21 0X297公釐) (請先閱讀背面之注意事項再填寫本頁) «in nn 訂 -7 - 經濟部中央捸準扃員工消費合作社印製 A7 _____B7五、發明説明(5 ) 半導體晶方1 ’係根據A u — S η共晶合金2接合在 散熱片4的一面之中央部。半導體晶方1的接合面,係未 形成有L S I之面》框體3的一面,係根據第一黏著劑5 黏著在散熱片4之一面的外圍部。TAB帶9 ,係根據第 二黏著劑6黏著在框體3之另一面。形成在TAB帶9的 一面之配線10的一端(內簧片),係和半導體晶方1之 電極(未圖示)電性地連接。配線1 〇的一端(內簧片) ,係和半導體晶方1 —齊根據密封樹脂8密封。在ΤΑ B 帶9之他面’有和配線1 〇電性連接的多數之焊錫堆7以 所定間隔形成。TAB帶9的他面之未配置有焊錫堆的領 域,係以耐焊劑21被覆。 本實施例的封裝,因使用金屬(A u — S η共晶合金 2)接合散熱片4和半導體晶方1,爲了確保兩者的接合 部之可靠性,以熱膨脹係數接近半導體晶方1的材料構成 散熱片4。做爲接近半導體晶方1之熱膨脹係數(3 X 1 〇-e/°C),且具有高導熱性的材料,例如有c u — W 合金(熱膨脹係數:〜6 X 1 〇-e/°c,彈性係數: 3 0 0 G P a ) ’和F e系合金’富銘紅柱石(mullite ),Ai^N,碳系材料(如鑽石)等。將散熱片4和半導 體晶方1接合的金屬,係上述之A u - S η共晶合金2以 外的金靥,例如A u - S i合金和高熔點焊錫等也可以。 支持封裝的框體3,係以具有接近將裝配該封裝之裝 配基板之熱膨脹係數的材料構成。例如裝配基板係以玻璃 環氧系基板(熱膨脹係數:1 〇〜2 0 X 1 ,彈 (請先閱讀背面之注意事項再填寫本頁) 裝. 訂— t ίΒ ·,3· ί I........「 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 8 經濟部中央標準局貝工消費合作社印製 A7 ____B7_ 五、發明説明(6 ) 性係數:5〜30GPa)構成時,框體3也將以玻璃環 氧系基材或具有與其接近的熱膨脹係數之材料構成。做爲 框體3的材料,除了玻璃環氧系基材之外,有例如C u合 金系基材和有機系基材等。同時,框體3的形狀,並不限 於如圖示之形狀,只需如包圍半導體晶方1的形狀,任何 者皆可。例如,根據把多數之立方體黏著2個以上,也能 實現和圖示的框體3相同之形狀。 將框體3和散熱片4黏著的等一黏著劑5,係以Jjt將 半導體晶方1密封之密封樹脂8彈性係數低的材料,例如 彈性係數爲5 OMP a以下,更理想者係以10MP a以 下之材料構成。最理想的密封樹脂8,爲彈性係數爲 0. 5〜10MPa之矽系彈性體(東洋嫘縈株式會社製 ’ 「TX2206」)等)。再者,矽系彈性體的熱膨脹 係數爲約3 0 0 X 10_e/°C。 將框體3和TAB帶9黏著的第二黏著劑6,係根據 彈性係數比第1黏著劑5高之材料,例如彈性爲5 0 0〜 1 0 0 OMP a程度的環氧樹脂構成。把半導體晶之 電極和焊錫堆7電性連接的裝置之TAB帶9,係以將黏 貼在合成樹脂基材的一面之銅箔蝕刻而形成配線1〇的可 撓性帶載體構成。做爲合成樹脂基材,例如有聚亞胺基材 (熱膨脹係數:5〜2 0 X 1 〇-e/°C,彈性係數:5 0 〜500MPa),和玻璃環氧系基材,聚醋基材等。 將形成在TAB帶9的配線10的一端和半導體晶方 1密封的密封樹脂8,係以比將散熱片4和框體3黏著之 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) I IM - n I I i n n I - —e u ^ n IT ! - I 線— I I I (請先閲讀背面之注意事項再填寫本頁) 9 經濟部中央標準局員工消費合作社印聚 五、發明説明(7 ) 前述第一黏著劑5彈性係數 〜30GPa ,熱膨脹係數 之環氧系密封樹脂構成。最 lOGPa以上的環氧系密 性係數爲5 G P a以上之有 亞胺系密封樹脂等。 做爲形成在TAB帶9 了焊錫堆7以外,也能利用 式的表面裝配採用之眾所周 極上接合柱狀或島狀之金屬 電極也可以。 根據如上述地構成的本 據使用導熱性高的金靥材料 半導體晶方1和散熱片4接 會高效率地傳導至散熱片4 有很大貢獻。亦即,對含有 )的熱傳導率爲約1〜50 合金2之熱傳導率爲約2 0 有機系黏著劑能大幅度改善 熱片4和半導體晶方1的熱 接合部的可靠性。並且,因 片4皆係熱傳導性高,故將 之熱阻及封裝一空氣間的熱 同時,根據本實施例的 A7 B7 高的材料、,例如彈性係數爲5
爲 10 〜300xl0_e/oC 理想者,爲彈性係數 封樹脂》此外,也可以使用彈 機材料,如酚系密封樹脂和聚 的一面之外部引出用電極,除 在地區行列(area array)方 知的各種電極。例如在底子電 端子者也可以,更且只要底子 實施例之半導體裝置時,將根 (Au — Sn共晶合金2)把 合,在半導體晶方1發生之熱 ,而對半導體晶方1的散熱將 Ag之有機系黏著劑(厶莒糊 w/m · k ,_Au — Sn 共晶 Ow/m · k以上,故比使用 熱傳導性。同時,根據減少散 膨脹係數差,也能確保兩者之 Au-Sn共晶合金2及散熱 大幅度地減低晶方一散熱片間 阻,而能得到髙之散熱特性。 半導體裝置時,彈性係數將比 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) —Ml n ! n I— I ! ! _I n - n If - IT - I I _ 線 (請先閲讀背面之注意事項再填寫本頁) 10 A7 3226;:!_ 五、發明説明(8 ) 密封樹脂8低。亦即,根據使用彈性界限高之黏著劑5將 散熱片4和框體3黏著,將能把根據構成封裝的各構件之 熱膨脹係數差發生的應力,以黏著劑5吸收•緩和。據此 ,能夠防止在把封裝裝配在裝配基板時及L S I的動作時 發生之根據熱應力的封裝龜裂和配線10之斷線。 更且*根據本實施例的半導體裝置時,根據使用彈性 係數高之密封樹脂8將半導體晶方1和配線1 0 (內簧片 )密封,將使半導體晶方1和配線1 0 (內簧片)根據密 封樹脂8堅固地固定,故能防止根據熱應力的配線1 0 ( 內簧片)之斷線。 本實施例的封裝,係如圖3所示,根據在散熱片4之 上部塔載散熱用的翼片1 1 ,將更能對應多銷,高消耗電 力之LS I 。翼片1 1將以如Aj?之高熱傳導性的金屬材 料構成,以脂膏等黏著劑和散熱片4接合。或者,也可以 在散熱片4把翼片1 1螺固》翼片1 1之厚度和形狀,並 無限制。例如也可以分割爲多數,可以考慮半導體晶方1 的發熱量,散熱片4之材料物性,製造程序,製造成本等 而選擇最適當者。 圖4,爲顯示將本實施例的半導懺裝置裝配在個人電 腦和工作站等所內裝之裝配基板2 0的狀態之一例的平面 圖,圖5 ,係沿圖4的b_b >線之斷面圖。 圖中的記號1 2爲本實施例的封裝,1 3爲如QF P (Qnad Flat Package)等其他之表面裝配型封裝。在該 裝配基板2 0,除了密封在本實施例的封裝1 2之閘陣列 ^紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -----------—裝—.—------ 訂--;------線--- (請先閲讀背面之注意事項再填寫本頁} 經濟部中央標準局員工消費合作社印製 -11 - 經濟部中央標準局員工消費合作社印裂 A7 B7 五、發明説明(9 ) 以外,也裝配有密封在Q F P . P L C C (Plastic
Leaded Chip Carrier)等封裝的 MP U,邏輯 L S I ’ 或密封在 S ◦ J (Small Outline J-leaded Pachage)等 封裝之D R A M。 本實施例的封裝1 2,因將外部引出用電極(焊錫堆 7 )配置成2次元之陣列狀,故銷節距比Q F P寬’裝配 時的不良發生率遠比QF P低。同時’能夠和QF P等其 他之表面裝配型封裝一齊回流(reflow) ’而容易裝配。 同時,本實施例的封裝1 2,因將支持封裝1 2之框 體3,根據以具有接近裝配基板2 0的熱膨脹係數之材料 構成,能夠防止在L S I的動作時根據發生之熱應力的封 裝1 2之彎曲和焊錫堆7的破斷,而能提高封裝1 2和裝 配基板2 0之連接可靠性。 以下,使用圖6說明本實施例的半導體裝置之裝配程 序。 首先,如圖6 ( a )所示,在散熱片4的一面之外圍 部使用第1黏著劑5把框體3黏著後,如圖6 (b)所示 ,在散熱片4的一面之中央部使用A u - S η共晶合金2 把半導體晶方1接合。或者,也可以把半導體晶方1接合 在散熱片4後,再黏著框體3。使用Au - Sn共晶合金 2的接合溫度條件,爲3 2 0 °C,1 〇分鐘程度。使用 Au — Sn共晶合金2以外之金屬,如Au — S i合金或 高熔點焊錫時的接合溫度條件,分別爲3 7 0 °C,2分鐘 程度,300 °C,10分鐘程度。 本紙張尺度適用中國國家標準(CNS ) A4规格(210X 297公慶) _--------批衣------.訂 I------^ (請先閱讀背面之注意事項再填寫本I·) 經濟部中央標準局負工消費合作社印製 A7 __B7五、發明説明(10 ) 然後,如圖6 (c)所示,在黏著散 之他面,使用第二黏著劑6把TAB帶9 TAB帶9的黏著,將使用眾所周知之熱 接著,如圖6 (d)所示,將形成在TA 1 0之一端(內簧片)合接在半導體晶方 合接以總括合接(gang bonding)方式進 體晶方1的電極上事先形成A u或焊錫之 合接的溫度條件,爲5 0 0 °C,1秒鐘程 單合接方式時,可以不需要在半導體晶方 堆》 然後,如圖6 (e)所示,將半導體 1 0的一端(內簧片)根據密封樹脂8密 f )所示,在TAB帶9形成焊錫堆7和 連接》要形成焊錫堆7時,將在TAB帶 ,以比焊錫之熔融溫度高溫進行回流》 再者,焊錫堆7的形成,雖然如上述 的最後工程進行也可以,但是也可以在把 基板剛前面進行。 本實施例的半導體裝置,因在半導體 配線10的連接使用TAB帶9,故能在 電極把配線1 0總括合接。因此,合接所 銷數,而只需短時間即可。 同時,本實施例的封裝1 2,係將支 體3以具有接近裝配基板2 0的熱膨脹係 表紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 熱片4 黏著。 壓著方 B帶9 1的電 行時, 堆爲理 度。另 1之電 的框體3 框體3和 式進行。 的配線 極。將該 以在半導 想。總括 一方面, 極上形成 晶方1和配線 封後,如圖6 ( 配線1 0電性地 9把焊錫球接合 地在封裝之裝配 封裝裝配在裝配 晶方1之電極和 半導體晶方1之 需時間將不依存 持封裝1 2之框 數之材料構成, IJ---------- — 裝------訂--_-----線--- (請先閲讀背面之注意事項再填寫本頁) -13 - A7 B7 五、發明説明(11 ) 能夠防止根據L S I的動作時發生之熱應力的封裝1 2之 彎曲和焊錫堆7的破斷,而提高封裝1 2和裝配基板2 0 之連接可靠性。 第2實施例 圖7 ,爲顯示本實施例的半導體裝置之斷面圖。 雖然前述實施例1的封裝,係在支持封裝之框體3黏 著TAB帶9,把形成在該TAB帶9的配線10和半導 體晶方1之電極電性地連接,但是本實施例的封裝*係在 框體14形成配線1. 0,把該配線10和半導體晶方1之 電極經由線1 5電性地連接。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 線 半導體晶方1,係根據Au_Sn共晶合金2接合在 散熱片的一面之中央部。半導體晶方1的接合面,爲未形 成有L S I之面。散熱片4,係根據具有接近半導體晶方 1的熱膨脹係數,且有高熱傳導性之材料,例如C u — W 合金,F e系合金,富鋁紅柱石,AJ2N,碳系的材料( 如纘石)等構成。接合散熱片4和半導體晶方1之金屬, 係Au — Sn共晶合金2以外的金靥,例如Au-S i合 金或高熔點焊錫等也可以。 框體1 4的一面,係根據黏著劑5黏著在散熱片4之 —面的外圍部。半導體晶方1和線1 5,係根據密封樹脂 8密封。在框體1 4之下面,有和配線1 0電性連接的多 數之焊錫堆7,以所定的間隔形成" 支持封裝的框體1 4,係以具有接近將裝配該封裝之 本紙張尺度適用中國國家標準(CNS ) A4規格(210X2517公釐) A7 B7 32261 五、發明説明(12 ) (請先閱讀背面之注意事項再填寫本頁) 裝配基板的熱膨脹係數之材料,例如熱膨脹係數爲1 〇〜 20xl 〇_e/°C,彈性係數爲1 0〜20GPa的玻璃 環氧系基材等構成,其厚度,做爲一例爲〇· 20〜 1. 〇〇mm。框體14,係使將半導體晶方1以密封樹 脂8密封時也會將線1 5完全密封地,在把線1 5連接的 領域和形成焊錫堆7的領域之間設有段差。該段差,係如 包圍半導體晶方1地形成。 經濟部中央標準局員工消費合作社印製 把框體1 4和散熱片4黏著的黏著劑5,係以比將半 導體晶方1密封之密封樹脂8彈性係數低的材料,如彈性 係數爲5 OMP a以下,更理想爲1 OMP a以下之材料 構成。最理想的密封樹脂8,係彈性係數爲〇· 5〜10 NfP a之矽系彈性體。將半導體晶方1和線1 5密封的密 封樹脂8,係以比上述黏著劑5彈性係數高之材料,如彈 性係數爲5〜3 0 G P a以上的酚系密封樹脂或聚亞胺系 密封樹脂等構成。特別理想者,爲彈性係數1 0 GP a以 上之環氧系密封樹脂。形成在框體3下面的外部引出用電 極,除了焊錫堆7之外,也能利用在面陣列方式的表面裝 配所採用之眾所周知的各種電極,如在底子電極上接合柱 狀或島狀之金屬端子者,並且只有底子電極也可以》 根據如上述地構成的本實施例之半導體裝置時,根據 使用熱傳導性高的金靥材料(Au_Sn共晶合金2)把 半導體晶方1和散熱片4接合,在半導體晶方1產生之熱 將會高效率地傳導至散熱片4,而對半導體晶方1的散熱 有大幅度之貢獻。同時,根據減少散熱片4和半導體晶方 t紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -15 - 經濟部中央標準局貝工消費合作社印製 A7 __B7 _ 五、發明説明(13 ) 1的熱膨脹係數差,能夠確保兩者之接合部的可靠性。更 且,因Au — S η共晶合金2及散熱片4皆係熱傳導性高 ,故會大幅度減低晶方一散熱片間的熱阻及封裝-空氣間 之熱阻,而能夠得到高散熱特性。 同時,根據本實施例的半導體裝置時,根據使用比密 封樹脂8彈性係數低,亦即使用彈性界限高之黏著劑5將 散熱片4和框體1 4黏著,將能以黏著劑5使根據構成封 裝的各構件之熱膨脹係數差發生的應力吸收•緩和。據此 ,能夠防止根據將封裝裝配在裝配基板時及L S I動作時 之熱應力的封裝龜裂和配線10之斷線。 同時,根據本實施例的半導體裝置時,因使用彈性係 數高的密封樹脂8將半導體晶方1和線1 5密封,半導體 晶方1和線1 5會根據密封樹脂8堅固地固定,故能防止 根據熱應力的線1 5之斷線。 同時,根據本實施例的半導體裝置時,因把支持封裝 之框體14以具有接近裝配基板的熱膨脹係數之材料構成 ,能夠防止根據L S I的動作時發生之熱應力的封裝之彎 曲和焊錫堆7的破斷,而提高封裝和裝配基板之連接可靠 性。 本實施例的半導體裝置,和前述實施例1之封裝不同 ,因未使用TAB帶9,故零件數及裝配工數能夠減少。 因此,能夠比實施例1的封裝減低成本。再者,如圖8所 示,使框體1 4的下面之將連接線1 5的領域和將形成焊 錫堆7的領域之間不設段差時,框體1 4的構造將會變成 、張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閣讀背面之注意事項再填寫本頁) -------裝------訂--„-----線--- -16 - A7 B7 322611 五、發明説明(14 ) 單純,能夠減低其製造成本,故能更減低封裝之成本。 (請先閲讀背面之注意事項再填寫本頁) 本實施例的封裝,係如圖9所示,根據在散熱片4的 上部裝載散熱用之翼片1 1 ,將更能因應多銷*高消耗電 力的LS I 。翼片1 1係以如Aj?之高導熱性的金屬材料 構成,以脂育等黏著劑和散熱片4接合。或者,也可以把 翼片1 1螺固在散熱片4。翼片1 1的厚度和形狀並無限 制。例如,也可以分割成多數,只需考慮半導體晶方1的 發熱量,散熱片4之材料物性,製造程序,製造成本等而 選擇最適當者即可。 接著,參照圖1 0說明本實施例的半導體裝置之裝配 程序。 首先,如圖10(a)所示,在散熱片4的一面之外 圍部使用黏著劑5將框體1 4黏著後,如圖1 0 (b )所 示,在散熱片4的一面之中央部使用A u — S η共晶合金 2 ’把半導體晶方1接合》或者,也可以將半導體晶方1 接合在散熱片4後,再把框體14黏著》 經濟部中央標準局員工消費合作社印製 然後,如圖10(c)所示,使用自動線合接機將半 導體晶方1的電極和框體1 4之配線1 0以線1 8連接後 ’如圖10 (d)所示,根據密封樹脂8把半導體晶方1 和線15密封,接著如圖1〇 (e)所示,在框體14下 面形成焊錫堆。此時如圖1 1所示,根據調整密封樹脂8 的厚度’使密封樹脂8下面和框體1 4下面之間不會產生 段差’封裝下面會成爲平坦,將焊錫球接合在框體1 4下 面的作業會變爲容易。焊錫堆7之形成,雖然也可以在封 張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -17 - 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明(15 ) 裝的裝配之最後工程進行,但是也可以在剛將封裝裝配在 裝配基板之前進行。 第3實施例 圖1 2 ,係顯示本實施例的半導體裝置之斷面圖。 本實施例的封裝,係將在兩面形成配線1 0之可撓帶 (或TAB帶)19以黏著劑6黏著在框體3的一面,把 該可撓帶1 9之配線1 0和半導體晶方1的電極,經由焊 錫堆1 6電性地連接。半導體晶方1和焊錫堆1 6,係在 根據散熱片4,框體3及可撓帶1 9包圍的空窝領域充填 成無空隙之密封樹脂8和外部遮斷。 可撓帶1 9的基材,係和前述實施例1之TAB帶一 樣,聚亞胺基材,玻璃環氧系基材,聚酯基材等。形成在 可撓帶1 9的兩面之配線10,10,係經由通孔18電 性地連接。可撓帶19的一面之配線10和他面的配線 1 0,係規劃成互相重疊,因此會根據配線1 0之通電的 電性特性而產生電磁感應,因此等以相互作用結合而有降 低電感之機能。在可撓帶1 9的中央部,設有用以從外部 將密封樹脂8注入根據框體3,散熱片4及可撓帶19所 包圍的空窩領域之注入孔1 7。在可撓帶1 9的下面,以 所定間隔形成有和配線1 0電性連接之多數的焊錫堆7。 半導體晶方1 ,係根據Au-Sn共晶合金2(或 A u — S i合金和高熔點焊錫等)黏合在散熱片4的一面 之中央部。再者,支持封裝的框體3之一面,係根據彈性 t张尺度通用中國國家標準(CNS ) A4規格( 210X297公釐) " " —18 — n n^— m i n -、-5TI»J1^1 I ! fit ! tfpt tie EH ji Is - in -- (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 ______B7 五、發明説明(16 ) 係數低的黏著劑5,黏著在散熱片4之一面的外圍部。框 體3,散熱片4,黏著劑5,6,係以和前述實施例1相 同之材料構成。 根據如上述地構成的封裝,係如圖1 3所示,根據在 散熱片4之上部裝載散熱用的翼片11 ,而更能夠因應多 銷,高消費電力之LSI 。 以下’參照圖1 4說明本實施例的半導體裝置之裝配 程序。 首先’如圖14(a)所示,將半導體晶方1和可撓 帶1 9根據浮片(fiip-chip)方式電性地連接。同時, 如圖14 (b)所示,在散熱片4的一面之外圍部使用第 一黏著劑把框體3黏著。然後,如圖14(c)所示,在 散熱片4的一面之中央部使用A u — S η共晶合金2將半 導體晶方1接合,同時在黏著在散熱片4的框體3之他面 使用第二黏著劑6把可撓帶19黏著。然後,如圖14( d )所示,通過形成在可撓帶1 9的注入孔1 7,把密封 樹脂8在空窩領域內毫無空隙地充填後,如圖1 4 ( e ) 所示地,在可撓帶1 9形成焊錫堆7而和配線1 0電性地 連接》 第4實施例 圖1 5,係顯示本實施例的半導體裝置之斷面圖。. 將半導體晶方1密封的密封樹脂8和彈性係數低之矽 系黏著劑5係互相的黏著性不太好。因此,在本實施例, ^張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--Ϊ -----訂--------* 線 --- -19 - 經濟部中央標準局貝工消費合作社印製 A7 _B7_ 五、發明説明(Π) 係減少黏著劑5的量而在框體3和散熱片4之接合部的一 部份把密封樹脂8之一部份充填(圖中以箭頭記號表示處 )。如此時,因框體3和散熱片4及密封樹脂8的接觸面 積會變大,故能防止密封樹脂8之剝離,而提高封裝之可 靠性。 第5實施例 圖1 6 ,係顯示本實施例的半導體裝置之斷面圖° 如在前述實施例2的圖8所示之封裝,使框體1 4下 面之將連接線15的領域和將形成焊錫堆7的領域之間不 設段差時,爲了不使線1 5從密封樹脂8露出,必須將密 封樹脂8充填成厚。如此時,根據在空窩領域的周圍之框 體設置堤2 2,而能使密封樹脂8的充填作業容易進行。 第6實施例 圖1 7,係顯示本實施例的半導體裝置之斷面圖。 本實施例的封裝,係將密封樹脂8以矽凝膠構成,而 把該矽凝膠根據Α β製的罐密封材2 3密封。在如此之構 造的封裝,也根據將散熱片4以彈性係數低之黏著劑5黏 著在框體3,而能夠使根據構成封裝的各構件之熱膨脹係 數差所產生的應力以黏著劑5使之吸收•緩和,故能防止 根據將封裝裝配在裝配基板時及L S I的動作時所發生之 熱應力的封裝龜裂和線15之斷線·
同時,在框體3,經由環氧系黏著劑6黏著有TAB 、張尺度適用中國國家揉準(CNS ) A4規格(210X297公釐) 一 fl^n ^^1·— ·1τ··= ,3-- :fli·· sfllu 3ίίί ------ ri.^ i ----J (請先閲讀背面之注意事項再填寫本頁) -20 - A7 _____B7_ 五、發明説明(18 ) 帶9。半導體晶方1 ,以從外部的保護爲目的,而以彈性 係數爲1 〇 G P a以上之環氧系密封樹脂8密封。 以上’雖然根據實施例具體說明本發明人所開發的發 明,但是本發明並不限於前述實施例。當然能夠在不超出 其要旨之範圍,進行各種變更。 〔產業上之利用可能性〕 如以上所述,本發明的半導體裝置,係具有使高散熱 特性和高可靠性兼顧之封裝構造,特別適用於B G A型封 裝爲理想者》 圖面之簡單說明 斷的 的置 置裝 裝體 體導 導半 半之 之例 例施 施實 實 1 1 第 第的 的明 明發 發本 本示 示顯 顯爲 爲, , 2 1 圖 圖, 圖 面 裝明 體發 導本 半將 的爲 例, 施 4 實圖 1 , 第圖 之面 明斷 發之 本態 在狀 示的 顯片 爲翼 ’ 之 3 用 圖熱 ’ 散 圖載 面裝 平置 !MI - ϋ n ! ϋ n -----I----I I I- n l·— - D I— n ___ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 圖發 ’ 本 圖示 面顯 平爲 之, 板 6 基圖 配’ 裝圖 的面 配斷 裝之 置線 裝' 體 b 導| 半 b 之的 例 4 施圖 實沿 1 爲 第’ 的 5 7 圖面 圖,斷 , 圖之 圖面置 程斷裝 工的體 之置導 法裝半 方體的 造導例 製半施 的之實 置例 2 裝施第 體實之 導 2 明 半第發 之的本 例明一7Γ 施發顯 實本樣 1 示同 第顯爲 的爲, 明 ,8 裝的 置明 裝發 體本 導示 半顯 在爲 之, 例 ο 施 1 實圖 2 , 第圖 的面 明斷 發之 本態 示狀 顯的 爲片 ’ 翼 9 用 圖熱 , 玫 圖載 ΓΠΜ -1 1X IX 圖 圖 面 斷 之 法 方 造 製 的 置 裝 體 導 半 之 例 施 實 2 第 準 標 家 一國 I國 -中 用 適 -尺 I張 紙 一本. 一釐 公 7 9 2 A7 ______B7_ 五、發明説明(19 ) 係同樣顯示本發明的第2實施例之半導體裝置的斷面圖, 圖1 2,爲顯示本發明的第3實施例之半導體裝置的斷面 置明 裝發 體本 導示 半顯 在爲 的, 例 4 施 1 實圖 3 , 第圖 之面 明斷 發的 本態 示狀 顯之 係片 ’ 翼 3 用 1 熱 圖散 , 載 圖裝 5 圖 -X , 圖圖 ’ 面 圖斷 程的 工置 之裝 法體 方導 造半 製之 的例 置施 裝實 體 4 導第 半的 之明 例發 施本 實示 3 顯 第爲 之, 圖斷 面的 斷置 之裝 置體 裝導 體半 導之 半例 的施 例實 施他 實其 5 的 第明 之發 明本 發示 本顯 示爲 顯, 爲 7 , IX 0 CO 1 , 面 (請先閱讀背面之注意事項再填寫本頁) -裝_ 訂 -線---- 經濟部中央標準局員工消費合作社印製 準 標 家 國 I國 中 用 適 度 一尺 I張 -紙 本 規 « - 11 « n m - -
Claims (1)
- A8 B8 C8 D8 322611 六、申請專利範圍 1 . 一種半導體裝置,主要係,具有在散熱片的一面 之中央部根據金屬接合而接合的半導體晶方,和如包圍前 述半導體晶方地,黏著在前述散熱片的一面之框體,和形 成在前述框體的一面之焊錫堆,和將前述焊錫堆與前述半 導體晶方的電極電性連接之連接手段,和把前述半導體晶 方密封的密封樹脂之半導體裝置*其特徵爲,前述散熱片 ,係以接近前述半導體晶方的熱膨脹係數之材料構成,而 前述框體和前述散熱片,係以比前述密封樹脂彈性係數低 的黏著劑黏著之半導體裝置。 2. 如申請專利範圍第1項所述之半導體裝置,其中 ,前述黏著劑的彈性係數,爲5 OMP a以下者。 3. 如申請專利範圍第1項所述之半導體裝置,其中 ,前述黏著劑的彈性係數,爲1 OMP a以下者。 4. 如申請專利範圍第2項所述之半導體裝置,其中 ,前述密封樹脂的彈性係數,爲5 G P a以上者。 5. 如申請專利範圍第2項所述之半導體裝置,其中 ,前述密封樹脂的彈性係數,爲1 0 GP a以上者。 6. 如申請專利範圍第1項所述之半導體裝置,其中 ,前述黏著劑,係由矽系彈性體而成者。 7. 如申請專利範圍第1項所述之半導體裝置,其中 ,前述框體,係以接近將半導體裝置裝配的裝配基板之熱 膨脹係數的材料構成。 8. 如申請專利範圍第1項所述之半導體裝置,其中 ,在前述框體和前述散熱片的接合部之一部份充填有前述 本紙張尺度逋用中國國家標準(CNS ) A4規格(210X297公釐)-23 - (請先閲讀背面之注意事項再填寫本頁) 裝---- 線--- 經濟部中央揉準局員工消費合作社印製 ABCD 經濟部中央標準局員工消費合作社印製 r、申請專利範圍 密封樹脂的一部份者。 9.如申請專利範圍第1項所述之半導體裝置,其中 ,在前述散熱片連接有散熱用的翼片者。 1 0 .如申請專利範圍第1項所述之半導體/^置,其 中,前述密封樹脂係由矽凝膠而成*根據缸密封材密封者 〇 1 1 .如申請專利範圍第1項所述之半導體裝置,其 中,在前述密封樹脂的開放端周圍設有堤者。 1 2 .如申請專利範圍第1項所述之半導體裝置,其 中,將前述焊錫堆和前述半導體晶方的電極連接之前述連 接手段,爲TAB帶者》 1 3 .如申請專利範圍第1 2項所述之半導體裝置, 其中,在前述TAB帶形成的多數之配線和前述半導體晶 方的多數之電極,係根據熱壓著方式總括連接者》 1 4 .如申請專利範圍第1 2項所述之半導體裝置, 其中,在前述散熱片連接有散熱用的翼片者。 1 5 ·如申請專利範圍第1 2項所述之半導體裝置, 其中,前述黏著劑的彈性係數,爲5 OMP a以下。 1 6 .如申請專利範圍第1 2項所述之半導體裝置, 其中,前述黏著劑的彈性係數,爲1 OMP a以下。 1 7.如申請專利範圔第1 5項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲5 GP a以上。 1 8 .如申請專利範圍第1 5項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲1 〇GP a以上* 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) -24 - • ' I JJ n n i SI n ! li Hr n ' n IE it nn Is (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局負工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 19.如申請專利範圍第1項所述之半導體裝置,其 中,將前述焊錫堆和前述半導體晶方的電極連接之前述連 接裝置,爲線者。 2 0 .如申請專利範圍第1 9項所述之半導體裝置, 其中,前述線的一端,係合接在前述框體形成之配線上。 2 1 .如申請專利範圍第1 9項所述之半導體裝置, 其中,在前述框體下面的將連接前述線之領域和將形成焊 錫堆的領域之間使之不設置段差者。 2 2 .如申請專利範圍第1 9項所述之半導體裝置, J 其中,在前述密封樹脂的開放端之周圍設有堤者。 2 3 .如申請專利範圍第1 9項所述之半導體裝置, 其中,在前述散熱片連接有散熱用的翼片者。 2 4 .如申請專利範圍第1 9項所述之半導體裝置, 其中,前述黏著劑的彈性係數,爲5 OMP a以下。 25. 如申請專利範圍第19項所述之半導體裝置, 其中,前述黏著劑的彈性係數•爲1 OMP a以下。 26. 如申請專利範圍第24項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲5 GP a以上》 27. 如申請專利範圍第24項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲1 OGPa以上。 28. 如申請專利範圍第1項所述之半導體裝置,其 中,將前述焊錫堆和前述半導體晶方的電極連接之前述連 接裝置,爲在兩面形成配線的可撓帶9 2 9 .如申請專利範圍第2 8項所述之半導體裝置, 本紙張尺度適用中國國家搞準(CNS)A4規格( 210X297公釐)_ 25 - 1^--------裝-------- 訂一Γ-----^ ----1__一 (請先閲讀背面之注意事項再填寫本頁) 322611 A8 B8 C8 D8 經濟部中央橾準局貝工消費合作社印裝 六、申請專利範圍 其中,前述配線和前述半導體晶方的電極,係經由形成在 前述半導體晶方之主面的焊錫堆電性地連接。 3 0.如申請專利範圍第2 8項所述之半導體裝置, 其中,前述可撓帶的一面之配線和他面的配線,係使至少 一部份會互相重疊地規劃。 3 1 .如申請專利範圍第2 8項所述之半導體裝置, 其中,在前述散熱片連接有散熱用的翼片者。 3 2.如申請專利範圍第2 8項所述之半導體裝置, 其中,前述黏著劑的彈性係數,爲5 OMP a以下。 3 3 .如申請專利範圍第2 8項所述之半導體裝置, 其中*前述黏著劑的彈性係數,爲1 OMP a以下。 34.如申請專利範圍第32項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲5GPa以上。 3 5 .如申請專利範圍第3 2項所述之半導體裝置, 其中,前述密封樹脂的彈性係數,爲1 0 GP a以上。 3 6 . —種半導體裝置,主要係,具有在散熱片的一 面之中央部份根據金羼接合而接合的半導體晶方,和如包 圍前述半導體晶方地,黏著在前述散熱片之一面的框體, 和形成在前述框體之一面的焊錫堆,和將前述焊錫堆與前 述半導體晶方之電極電性地連接的連接裝置,和把前述半 導體晶方密封之矽凝膠,和將前述半導體晶方及前述矽凝 膠密封的罐密封材之半導體裝置,其特徵爲,前述散熱片 ,係以接近前述半導體晶方的熱膨脹係數之材料構成,而 前述框體和前述散熱片,係以比前述密封樹脂彈性係數低 本紙張尺度適用中國國家標準(CNS)A4规格( 210X297公釐)-26 - ---------裝----^---訂--- ---- I 線__1 (請先閱讀背面之注意事項再填寫本頁) A8 B8 C8 D8 經濟部中央標準局負工消費合作社印製 六、申請專利範圍 的黏著劑黏著。 37.如申請專利範圍第36項所述之半導體裝置, 其中,將前述焊錫堆和前述半導體晶方的電極連接之前述 連接裝置,爲線者。 3 8 .—種半導體裝置之製造方法,主要係,具有在 散熱片的一面之中央部份將半導體晶方根據金屬接合的工 程,和在前述散熱片之一面,如包圔前述半導體晶方地把 框體根據黏著劑黏著之工程,和在前述框體的一面形成焊 錫堆,將前述焊錫堆與前述半導體晶方之電極電性連接的 工程,和把前述半導體晶方根據密封樹脂密封的半導體裝 置之製造方法,其特徵爲,將前述散熱片以接近前述半導 體晶方的熱膨脹係數之材料構成,把前述黏著劑以比前述 密封樹脂彈性係數低的材料構成· 39. 如申請專利範圍第38項所述的半導體裝置之 製造方法,其中,在前述框體的他面使用第二黏著劑將 TAB帶黏著,將前述焊錫堆和前述半導體晶方之電極經 由形成在前述T A B帶的配線電性地連接· 40. 如申請專利範圍第38項所述的半導體裝置之 製造方法,其中,經由形成在前述框體的配線,和在前述 配線與前述半導體晶方的電極之間合接的線把前述焊錫堆 與前述半導體晶方之氰極電性地連接· 4 1 .如申請專利範圔第3 8項所述的半導體裝置之 製造方法,其中,在前述框體的他面使用第二黏著劑將 ΤΑ B帶黏著,根據在前述ΤΑ B帶形成之配線上將前述 (請先閲讀背面之注意事項再填寫本頁) .裝' :訂 線 私紙張尺度遑用中國國家橾準(CNS ) A4规格(210X297公釐) -27 - 經濟部中央標準局貝工消費合作社印製 々、申請專利範圍 半導體晶方浮片連接,而把前述焊錫堆和前述半導體晶方 的電極電性地連接。 4 2 .—種裝配基板,其特徵爲,申請專利範圍第1 項所述之半導體裝置,和與前述半導體裝置不同的表面裝 配型封裝根據總括回流裝配,以熱膨脹係數接近前述半導 體裝置的前述框體之材料構成者。 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)-28 - J - I ρί «Μ n ! ! I ' I---— J* 訂-- ------*B ft 線 I___ I —i Hr, (請先閲讀背面之注意事項再填寫本頁)
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- 1996-09-27 WO PCT/JP1996/002815 patent/WO1997020347A1/ja not_active Application Discontinuation
- 1996-09-27 CN CN96198629A patent/CN1202983A/zh active Pending
- 1996-09-27 US US09/077,190 patent/US6404049B1/en not_active Expired - Fee Related
- 1996-09-27 EP EP96932027A patent/EP0865082A4/en not_active Withdrawn
- 1996-11-26 TW TW085114590A patent/TW322611B/zh active
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2002
- 2002-01-16 US US10/046,258 patent/US6621160B2/en not_active Expired - Fee Related
- 2002-01-16 US US10/046,204 patent/US6563212B2/en not_active Expired - Fee Related
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CN1202983A (zh) | 1998-12-23 |
WO1997020347A1 (en) | 1997-06-05 |
US6404049B1 (en) | 2002-06-11 |
US6563212B2 (en) | 2003-05-13 |
EP0865082A1 (en) | 1998-09-16 |
US6621160B2 (en) | 2003-09-16 |
KR19990067623A (ko) | 1999-08-25 |
AU7096696A (en) | 1997-06-19 |
EP0865082A4 (en) | 1999-10-13 |
US20020066955A1 (en) | 2002-06-06 |
US20020105070A1 (en) | 2002-08-08 |
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