CA1261482A - Self-contained thermal transfer integrated circuit carrier package - Google Patents
Self-contained thermal transfer integrated circuit carrier packageInfo
- Publication number
- CA1261482A CA1261482A CA000570055A CA570055A CA1261482A CA 1261482 A CA1261482 A CA 1261482A CA 000570055 A CA000570055 A CA 000570055A CA 570055 A CA570055 A CA 570055A CA 1261482 A CA1261482 A CA 1261482A
- Authority
- CA
- Canada
- Prior art keywords
- generally
- integrated circuit
- carrier package
- circuit carrier
- vessal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/467—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing gases, e.g. air
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
SELF-CONTAINED THERMAL TRANSFER
INTEGRATED CIRCUIT CARRIER PACKAGE
ABSTRACT
A semiconductor carrier package to accommodate single or multiple integrated circuits. This such package being enhanced with a micro-engineered thermal transfer apparatus which effectively removes the large heat fluxes generated in such applications. Said apparatus being completely self-contained and independent of any external systems of coolant pumps, collection or heat transfer systems. Coolant flow is internally perpetuated by the heat generated by these semiconductor circuit(s) and no moving mechanisms are generally employed. The invention is a spacially compact integrated circuit package unit with minimal mass and high thermal removal efficiencies. The lack of complex components or moving mechanisms also increases the reliability of the package making it virtually maintenance free.
INTEGRATED CIRCUIT CARRIER PACKAGE
ABSTRACT
A semiconductor carrier package to accommodate single or multiple integrated circuits. This such package being enhanced with a micro-engineered thermal transfer apparatus which effectively removes the large heat fluxes generated in such applications. Said apparatus being completely self-contained and independent of any external systems of coolant pumps, collection or heat transfer systems. Coolant flow is internally perpetuated by the heat generated by these semiconductor circuit(s) and no moving mechanisms are generally employed. The invention is a spacially compact integrated circuit package unit with minimal mass and high thermal removal efficiencies. The lack of complex components or moving mechanisms also increases the reliability of the package making it virtually maintenance free.
Description
il2 S~LF-CO~JT~TNEl~ THF.R~ TRANSFER
INTEGR~TED CIR(~UIT CAR~IER PACK~E
The invention enhances tne internal convective operation of an integrated circuit carrier package. Typicallyt the semiconductor die is secured in a small hermetically sealed chamber with some inert gaseous atmosphere. This invention expands this chamber via a network of cooling substructures which allow the working ~luid to circulate and exchange heat energy with cooler portions of the package. The invention hence has a coolant flow self-perpetuated by the heat generated by the semiconductor die. A completely self-contained and independent cooling system is summarily conslructed. In a typical installation of such integrated circuits as in a minicomputer, no coolant circulation system is required. This reduces mass of said system as well as costs at an efficiency level between a large area finned heatsink and a external coolant circulation system.
The design of the invention begins at the semiconductor placement site. Here, the semiconductor is fastened 10 toastructurecomposedoffusedsphericals.ThesefusedsphericalsprovideacombinationoEthermalduty.Firstly,such a structure provides a greatened surface area which is generally several times greater than that of the semiconductor die itself. This improved thermal area boosts convective heat transfer to the working fluid and aids in reduction of the die temperature. The fused spheroid structure also has specific characteristics when a liquid is employed as the working fluid. The larger surface area and the porous nature of this structure controls any violent boiling effects that may be induced in such a situation. The secondary function of the structure is heat conduction to the main heat transfer device.
Heat conduction from the semiconductor material continues through an electrical isolation layer and the thin wallcoolantshellstoahighlyconductivespacerandstem.Thisstemalsoservesasachargingvalveassemblyforwhich the internal volume can be readily evacuated and filled with ~he requisite working fluid (gaseous or liquid). This conductive stem is essentially encompassed in a fused spheroid structure. This spheroidal structure encompasses the 20 upper portion of the invention in a form or shape of a diagonally arranged finned porous heatsink. This provides a low-mass large area heat tranfer surface which is enhanced for specific flow characteristics and radiadve discharge properties.
Convection of heat from the semiconductor die is from all exposed surfaces including the spheroid base. The working fluid is heated in the primary chamber. If the working fluid is gaseous at standard conditions, it will rise in temperature and pressure. If a liquid is employed as a working fluid, phase changes such as boiling may occur. The highpressuregasorvapouristhencollectedindomedstructuresandisforcedthrougheitheranaperture,orifice,nozzle, and/or valve. The selection of this component is dependent on the nature of the working fluid. A gaseous coolant can undergo a pressure and temperature drop æ it passes through a restriction. Similarly, a vapour may revert to a liquid insuchathermodynamiceffect.Theworkingfluidinpassingthroughthisstageencountersalargesurfaceareatypically ~o at a cooler temperature than itself. This is the secondary chamber which contains a mass of spheroids. Here thermal convection occurs from the working fluid to this area and subsequently reduces the fluid temperature. This complete structure is known as the thermal transfer module. Multiple transfer modules are networked in a fashion which allows the working fluid to flow across several of these modules in sequence. The network is arranged in a geometry which ~7~ ,ff~
will provide subsequently cooler modulcs along a single tlOw path. Two module types are typically employed in this fashion. A module as described above is both a fluid^collecting and heat-transfering unit, whereas a strictly heat-transfering type unit may be also employed in coordinates of cooler andlor non-collective locals. These modules are interconnected by coolant ducts which carry the working fluid from unit to unit, The working fluid eventually reaches the coolant retum chamber where it opens a set of valves to reenter the primary chamber. These valves are generally located above the die and base structure so as to permit a coolant stream to directly cool the semiconductor die. The circulation of the working fluid is perpetuaUy driven by the themmal energy generated by the semiconductor circuit.
The thermal transfer modules are arranged geometrically to not only take advantage of generally cooler coordinates, but also a fused mass of spheroids. The general form or shape of this structure is essentially a set of o diagonally arranged fin-like structures. The diagonal structure provides a violently turbulent obstacle to a forced flow of air typically encountered in many applications. It is an optional requirement of the invention to generally be in a forced airflo v environment. Although the imvention will function e~ficiently in a static environment, a dynamic airflow willenhancetheoperationoftheinvention.Theaveragetemperatureofthefin-likestructurecanbecontrolledtowithin several degrees of this forced air stream. Should a s~atic situation be required, the radiative discharge characteristics of the external spheriod structure may be enhanced accordingly. An orientation criteria also exists for the invention.
When a gaseous working fluid is employed, the invention will operate under any orientation (ie. horizontal, vertical).
Thisisalsotrueforsomeliquidworkingfluidswhichwillnotboilorvapourizeundertherequisiteoperationaldomain.
Should a boiling effect be employed in cooling, special attention as to orientation of the vapour collection domes must be made. The major components of the thermal transfer apparatus also exert some benificial functions. Generally, these 20 components serve as a conductive heat sink to the semiconductor circuit as well as the above mentioned functions.
Typically, a majority of the materials employed will be metallic in nature and they will provide an electromagnetic shield to the semiconductor die. The invention is readily hardened to immunity from such phenomena as electromag-netic pulses (~MP) and cosmic rays.
Construction of said invention begins with the formation of the vessal layers. This can be accomplished by astampingformationprocessintherequiredshapeorform.Theinternalvessallayermustalsohaveanadditionalvalve, orifice etc. An micro-aperture can be bored using a high-powered laser drill, or a valve, nozzle etc. can be beam welded into position. The external vessal layer is then filled with a measured amount of spheriods into the formed cavities and the internal layer is positioned on top. A seam welding operation is then performed on the perimeter of this assembly and spot welds are strategically implemented on the internal areas. Material selection for these components is 30 important. They must be optimized with respect to thermal properties and knowledge of the chemical characteristics of the working fluid. This will prevent material reactions which may corrode or foul the assembly and reduce its usefulness. As an example, copper may be used as the metal in the assembly with an inert gas(es) such as helium etc.
Stainless-type steels may be employed when the coolant is a flourocarbon liquid as an alternative example. The vessal assembly is completed by the affixing of the charging assembly by a welding process. The final step would be to fuse the external fin-like spheriods into shape or form. This would be implemented in a die-form with a measured amount of spheriods and fused into permanent shape. The process of such nature is well described in the art of U.S. Patent
INTEGR~TED CIR(~UIT CAR~IER PACK~E
The invention enhances tne internal convective operation of an integrated circuit carrier package. Typicallyt the semiconductor die is secured in a small hermetically sealed chamber with some inert gaseous atmosphere. This invention expands this chamber via a network of cooling substructures which allow the working ~luid to circulate and exchange heat energy with cooler portions of the package. The invention hence has a coolant flow self-perpetuated by the heat generated by the semiconductor die. A completely self-contained and independent cooling system is summarily conslructed. In a typical installation of such integrated circuits as in a minicomputer, no coolant circulation system is required. This reduces mass of said system as well as costs at an efficiency level between a large area finned heatsink and a external coolant circulation system.
The design of the invention begins at the semiconductor placement site. Here, the semiconductor is fastened 10 toastructurecomposedoffusedsphericals.ThesefusedsphericalsprovideacombinationoEthermalduty.Firstly,such a structure provides a greatened surface area which is generally several times greater than that of the semiconductor die itself. This improved thermal area boosts convective heat transfer to the working fluid and aids in reduction of the die temperature. The fused spheroid structure also has specific characteristics when a liquid is employed as the working fluid. The larger surface area and the porous nature of this structure controls any violent boiling effects that may be induced in such a situation. The secondary function of the structure is heat conduction to the main heat transfer device.
Heat conduction from the semiconductor material continues through an electrical isolation layer and the thin wallcoolantshellstoahighlyconductivespacerandstem.Thisstemalsoservesasachargingvalveassemblyforwhich the internal volume can be readily evacuated and filled with ~he requisite working fluid (gaseous or liquid). This conductive stem is essentially encompassed in a fused spheroid structure. This spheroidal structure encompasses the 20 upper portion of the invention in a form or shape of a diagonally arranged finned porous heatsink. This provides a low-mass large area heat tranfer surface which is enhanced for specific flow characteristics and radiadve discharge properties.
Convection of heat from the semiconductor die is from all exposed surfaces including the spheroid base. The working fluid is heated in the primary chamber. If the working fluid is gaseous at standard conditions, it will rise in temperature and pressure. If a liquid is employed as a working fluid, phase changes such as boiling may occur. The highpressuregasorvapouristhencollectedindomedstructuresandisforcedthrougheitheranaperture,orifice,nozzle, and/or valve. The selection of this component is dependent on the nature of the working fluid. A gaseous coolant can undergo a pressure and temperature drop æ it passes through a restriction. Similarly, a vapour may revert to a liquid insuchathermodynamiceffect.Theworkingfluidinpassingthroughthisstageencountersalargesurfaceareatypically ~o at a cooler temperature than itself. This is the secondary chamber which contains a mass of spheroids. Here thermal convection occurs from the working fluid to this area and subsequently reduces the fluid temperature. This complete structure is known as the thermal transfer module. Multiple transfer modules are networked in a fashion which allows the working fluid to flow across several of these modules in sequence. The network is arranged in a geometry which ~7~ ,ff~
will provide subsequently cooler modulcs along a single tlOw path. Two module types are typically employed in this fashion. A module as described above is both a fluid^collecting and heat-transfering unit, whereas a strictly heat-transfering type unit may be also employed in coordinates of cooler andlor non-collective locals. These modules are interconnected by coolant ducts which carry the working fluid from unit to unit, The working fluid eventually reaches the coolant retum chamber where it opens a set of valves to reenter the primary chamber. These valves are generally located above the die and base structure so as to permit a coolant stream to directly cool the semiconductor die. The circulation of the working fluid is perpetuaUy driven by the themmal energy generated by the semiconductor circuit.
The thermal transfer modules are arranged geometrically to not only take advantage of generally cooler coordinates, but also a fused mass of spheroids. The general form or shape of this structure is essentially a set of o diagonally arranged fin-like structures. The diagonal structure provides a violently turbulent obstacle to a forced flow of air typically encountered in many applications. It is an optional requirement of the invention to generally be in a forced airflo v environment. Although the imvention will function e~ficiently in a static environment, a dynamic airflow willenhancetheoperationoftheinvention.Theaveragetemperatureofthefin-likestructurecanbecontrolledtowithin several degrees of this forced air stream. Should a s~atic situation be required, the radiative discharge characteristics of the external spheriod structure may be enhanced accordingly. An orientation criteria also exists for the invention.
When a gaseous working fluid is employed, the invention will operate under any orientation (ie. horizontal, vertical).
Thisisalsotrueforsomeliquidworkingfluidswhichwillnotboilorvapourizeundertherequisiteoperationaldomain.
Should a boiling effect be employed in cooling, special attention as to orientation of the vapour collection domes must be made. The major components of the thermal transfer apparatus also exert some benificial functions. Generally, these 20 components serve as a conductive heat sink to the semiconductor circuit as well as the above mentioned functions.
Typically, a majority of the materials employed will be metallic in nature and they will provide an electromagnetic shield to the semiconductor die. The invention is readily hardened to immunity from such phenomena as electromag-netic pulses (~MP) and cosmic rays.
Construction of said invention begins with the formation of the vessal layers. This can be accomplished by astampingformationprocessintherequiredshapeorform.Theinternalvessallayermustalsohaveanadditionalvalve, orifice etc. An micro-aperture can be bored using a high-powered laser drill, or a valve, nozzle etc. can be beam welded into position. The external vessal layer is then filled with a measured amount of spheriods into the formed cavities and the internal layer is positioned on top. A seam welding operation is then performed on the perimeter of this assembly and spot welds are strategically implemented on the internal areas. Material selection for these components is 30 important. They must be optimized with respect to thermal properties and knowledge of the chemical characteristics of the working fluid. This will prevent material reactions which may corrode or foul the assembly and reduce its usefulness. As an example, copper may be used as the metal in the assembly with an inert gas(es) such as helium etc.
Stainless-type steels may be employed when the coolant is a flourocarbon liquid as an alternative example. The vessal assembly is completed by the affixing of the charging assembly by a welding process. The final step would be to fuse the external fin-like spheriods into shape or form. This would be implemented in a die-form with a measured amount of spheriods and fused into permanent shape. The process of such nature is well described in the art of U.S. Patent
- 2 -#3,825,064. ~imilMly, the spheriod dic base can be manufactured.
The radiative coating(s) to this external spheriod structure can be applied by various methods including electrochemical plating, plasma or ion deposition, oxidization etc. Selection of the coating and its combinations relys on knowledge of the temperature application and the physical phenomena of radiative transfer that occurs within this spheriod structure. Coating selection and application can become a major thermal transfer mechanism when properly implemented. Multiple coatings can be built-up on the spheriod surface which exhibit a hi8h emissivity with a selectively reflective and absorptive characteristics. This would facilitate absorption of low energy photons, and reflection of high energy radiation. An example implementation would be to plate a reflective metal such as gold, chromium, nickel etc. onto the spheriod structure. An ion implantation technique can then be utilized to coat a highly 10 emissive material such as carbon onto the majority of the externally accessible surfaces. This would effect a reflective inner core where temperature gradients are high and an exterior surface with high emissivity. Particular coating combinations may also provide surface discharge characteristics of interesting photonic effects due to quantum properties. An example of this would be a surface which essentially converts heat energy into visible light. The material(s) may be either inorganic or even organic which has been bioengineered for such a use.
Theheatexchangeapparatusoncecompletedintheabovefashionisreadyforassemblytotherestofthecarrier package. A base carrier is completed with thepin grid array and electrical traces. A dielectric isolation layer is generally affixed with adhesives to this assembly. Finally, the thermal exchanger is affixed to the base assembly with generally some form of adhesives. The self-contained thermal transfer carAer package is now ready to accept the semiconductor circuit(s).Thesemiconductordie(s)is/areaffixedtothespherAodbasewhichisthensecuredinthecenterofthethermal 20 package. These operations typically will take place in a facility known as a clean room to prevent particulate contamination. Once the semiconductor assembly is affixed, circuit connections to the gAd can be made on an automated wire machine. The cover plate is then secured iDto place to seal the carrier package. The package is then ready to accept its coolant. An evacuation of the trapped gases inside the unit is made through the charging valve. At this point, the actual working fluid either gaseous or liquid may be introduced into the internal chambers through the charging valve. The self-contained thermal transfer carAer package is now ready for testing, veAfication and application.
Features, objects, and concepts of this invention are more readily understood visually through the aid of a drawing, specifically:
l~IG. 1 is an isometric view of a self-contained thermal transfer apparatus implemented in a pin grid array package 30 format;
FIG. 2 is a cross-sectional view through the central diagonal fin-like structure illustrating the major components of the invention;
FIG. 3 is an anatomical top view of the same apparatus illustrating geometAc placement of the components which
The radiative coating(s) to this external spheriod structure can be applied by various methods including electrochemical plating, plasma or ion deposition, oxidization etc. Selection of the coating and its combinations relys on knowledge of the temperature application and the physical phenomena of radiative transfer that occurs within this spheriod structure. Coating selection and application can become a major thermal transfer mechanism when properly implemented. Multiple coatings can be built-up on the spheriod surface which exhibit a hi8h emissivity with a selectively reflective and absorptive characteristics. This would facilitate absorption of low energy photons, and reflection of high energy radiation. An example implementation would be to plate a reflective metal such as gold, chromium, nickel etc. onto the spheriod structure. An ion implantation technique can then be utilized to coat a highly 10 emissive material such as carbon onto the majority of the externally accessible surfaces. This would effect a reflective inner core where temperature gradients are high and an exterior surface with high emissivity. Particular coating combinations may also provide surface discharge characteristics of interesting photonic effects due to quantum properties. An example of this would be a surface which essentially converts heat energy into visible light. The material(s) may be either inorganic or even organic which has been bioengineered for such a use.
Theheatexchangeapparatusoncecompletedintheabovefashionisreadyforassemblytotherestofthecarrier package. A base carrier is completed with thepin grid array and electrical traces. A dielectric isolation layer is generally affixed with adhesives to this assembly. Finally, the thermal exchanger is affixed to the base assembly with generally some form of adhesives. The self-contained thermal transfer carAer package is now ready to accept the semiconductor circuit(s).Thesemiconductordie(s)is/areaffixedtothespherAodbasewhichisthensecuredinthecenterofthethermal 20 package. These operations typically will take place in a facility known as a clean room to prevent particulate contamination. Once the semiconductor assembly is affixed, circuit connections to the gAd can be made on an automated wire machine. The cover plate is then secured iDto place to seal the carrier package. The package is then ready to accept its coolant. An evacuation of the trapped gases inside the unit is made through the charging valve. At this point, the actual working fluid either gaseous or liquid may be introduced into the internal chambers through the charging valve. The self-contained thermal transfer carAer package is now ready for testing, veAfication and application.
Features, objects, and concepts of this invention are more readily understood visually through the aid of a drawing, specifically:
l~IG. 1 is an isometric view of a self-contained thermal transfer apparatus implemented in a pin grid array package 30 format;
FIG. 2 is a cross-sectional view through the central diagonal fin-like structure illustrating the major components of the invention;
FIG. 3 is an anatomical top view of the same apparatus illustrating geometAc placement of the components which
-3-invoke the invention.
A more definitive descrip~ion of tne components of the invention can be made with respect to illustrative ordering. Specifically, the semiconductor die at 1 is affixed to a spheroid base 2. This base is essentially a fused mass of spheroids with generally complimentary thermal expansion proper~ies to the semiconductor die material. Fixation of the die to this base can be implemented by such techniques as adhesives, soldering or direct fusion. The primary chamber 3 contains the working fluid which is in direct contact with 1 and 2. This working fluid will exchange the majority of its thermal energy in the secondary chamber 4. The working fluid gains thermal energy from the semiconductor material 1 and its base 2 and proceeds through the coolant pass-through openings 5. These opening 5 are initiated in the dielectric isolation layers 20. The working fluid is essentially directed to the collection domes 6.
o Here, the working fluid is forced through an aperture 7 or other fluid related component as previously described into the secondary chamber 4. The working fluid encounters a large surface area created by a mass of spheroids 8. A transfer of energy from the fluid to the surface occurs thus reducing the energy state of the coolant. The working fluid will pass through several of these heat-transfer modules 9. These modules 9 are connected in a network by coolant ducts 10 in a fashion described previous. The working fluid eventually flows to the coolant return chamber 11 where it passes through a coolant return valve 12. The fluid has now returned into the primary chamber and completed a cycle of the perpetual circulation function. The primary chamber 3 containing the semiconductor die 1 and base 2 is accessed by removal of coverplate 30.
Working fluid loading, maintenance etc. is accomplished through the charging valve 13 and charging duct 14. Here both the primary chamber 3 and secondary chamber 4 can be evacuated through this valve and replaced with 20 coolant.Valvel3andductl4arecomponentsoftheconductivestudlSandconductivespacerl6.Thiscolumnofhighly conductive material transfers a portion of the heat generated by the semiconductor circuit to the external surroundings.
This stud 15 and the transfer modules 9 are conceiled within an external structure of fused spheroids 17. As previously described, these fused spheriods have a diagonal fin-like form. Not only are ~he spheriods fused amongst themselves as per description, but they are fused to the external vessal layer 18. This vessal layer effects the shape and form of the secondary chamber 4. The internal vessal layer 19 effects the shape and form of the boundary between the primary chamber 3 and secondary chamber 4. The coupling of these two vessal layers produces the heat exchanger vessal 29.
The dielectric isolation layer 20 isolates these layers from the electrical network.
Electrical connections to the semiconductor circuit 1 are made through connection wires 21. These wires 21 terlninate at connection pads 22 which route signals through electrical traces 23 to the contact pin grid array 24. These 30 pins 24 are extended through pin holes 25 in the base carrier material 26. The base carrier material generally will have dielectric isolation characteristics necessary to prevent shorts. The pin grid array 24 is completed with pin seals 27.
To provide for proper electrical insertion in various applications, a package index notch 28 is supplied.
A more definitive descrip~ion of tne components of the invention can be made with respect to illustrative ordering. Specifically, the semiconductor die at 1 is affixed to a spheroid base 2. This base is essentially a fused mass of spheroids with generally complimentary thermal expansion proper~ies to the semiconductor die material. Fixation of the die to this base can be implemented by such techniques as adhesives, soldering or direct fusion. The primary chamber 3 contains the working fluid which is in direct contact with 1 and 2. This working fluid will exchange the majority of its thermal energy in the secondary chamber 4. The working fluid gains thermal energy from the semiconductor material 1 and its base 2 and proceeds through the coolant pass-through openings 5. These opening 5 are initiated in the dielectric isolation layers 20. The working fluid is essentially directed to the collection domes 6.
o Here, the working fluid is forced through an aperture 7 or other fluid related component as previously described into the secondary chamber 4. The working fluid encounters a large surface area created by a mass of spheroids 8. A transfer of energy from the fluid to the surface occurs thus reducing the energy state of the coolant. The working fluid will pass through several of these heat-transfer modules 9. These modules 9 are connected in a network by coolant ducts 10 in a fashion described previous. The working fluid eventually flows to the coolant return chamber 11 where it passes through a coolant return valve 12. The fluid has now returned into the primary chamber and completed a cycle of the perpetual circulation function. The primary chamber 3 containing the semiconductor die 1 and base 2 is accessed by removal of coverplate 30.
Working fluid loading, maintenance etc. is accomplished through the charging valve 13 and charging duct 14. Here both the primary chamber 3 and secondary chamber 4 can be evacuated through this valve and replaced with 20 coolant.Valvel3andductl4arecomponentsoftheconductivestudlSandconductivespacerl6.Thiscolumnofhighly conductive material transfers a portion of the heat generated by the semiconductor circuit to the external surroundings.
This stud 15 and the transfer modules 9 are conceiled within an external structure of fused spheroids 17. As previously described, these fused spheriods have a diagonal fin-like form. Not only are ~he spheriods fused amongst themselves as per description, but they are fused to the external vessal layer 18. This vessal layer effects the shape and form of the secondary chamber 4. The internal vessal layer 19 effects the shape and form of the boundary between the primary chamber 3 and secondary chamber 4. The coupling of these two vessal layers produces the heat exchanger vessal 29.
The dielectric isolation layer 20 isolates these layers from the electrical network.
Electrical connections to the semiconductor circuit 1 are made through connection wires 21. These wires 21 terlninate at connection pads 22 which route signals through electrical traces 23 to the contact pin grid array 24. These 30 pins 24 are extended through pin holes 25 in the base carrier material 26. The base carrier material generally will have dielectric isolation characteristics necessary to prevent shorts. The pin grid array 24 is completed with pin seals 27.
To provide for proper electrical insertion in various applications, a package index notch 28 is supplied.
Claims (12)
1. An integrated circuit carrier package comprising;
a semiconductor circuit(s), an internal member or base of fused thermally conductive spheroidal material generally planar and rectangular in form, a means of securing or affixing said semiconductor circuit(s) to said base generally by adhesive(s), soldering or direct fusion, a planar structural member of electrically non-conductive material with means to allow mass flow through said member generally by the inclusion of opening(s) or aperture(s), a means of establishing an internal electrical connection network or array generally by depositing electrically conductive circuit traces upon said structural member, a means of securing or affixing said base and circuit(s) assemblage to said structural member generally by adhesive(s), a means of electrically connecting said circuit(s) to said connection network generally by soldering wirebonds between the terminations on said circuit(s) and the electrical network, a complimentary planar structural member or carrier base of electrically non-conductive material with means to allow access to said circuit(s) generally by the inclusion of a central rectangular opening in said member, a means of extending said internal electrical connection network to an externally accessable connection array of application circuit systems generally by the inclusion of electrically conductive pins passing through said carrier base, a means of sealing or fortifying said external connection array or pins generally with solder, a means of securing and sealing the access opening in said complimentary member generally by the use of a coverplate and adhesive(s), a means of affixing said base carrier assemblage to said complimentary structural member assemblage generally with electrically non-conductive adhesive(s), a heat exchanger further comprising;
an internal heat exchanger vessal layer with a means of collecting and directing mass flow through said internal vessal layer generally by forming multiple intrinsic dome-like structures and a means for mass flow through said vessal layer generally by the inclusion of aperture(s), orifice(s), nozzle(s) and or valve(s), an external heat exchanger vessal layer with a means for volumetric chambering(s) and interconnection generally by forming multiple intrinsic dome-like structures complimentary to those of the internal vessal layer and interconnected by ducts and a means of externally accessing said volumetric chambering(s) generally by the inclusion of an intrinsic charging valve, a mass of thermally conductive spheroids contained in the chambering(s) bounded by the internal and external heat exchanger vessal layers, a means of sealing and affixing the external vessal layer assemblage to the internal vessal layer assemblage generally by spot welding and perimeter seam welding, a mass of thermally conductive spheroids fused to the external surface of the external vessal layer assemblage generally in a fin-like diagonal form, a means for enhancing radiative heat transfer from said fused spheroid exterior generally by the deposition of highly emissive/reflective materials as surface coating(s) on said exterior spheroid surfaces, a means of mass flow generally by the use of a working fluid or coolant, a means of securing and affixing said heat exchanger assemblage to said circuit carrier assemblage generally by adhesive(s).
a semiconductor circuit(s), an internal member or base of fused thermally conductive spheroidal material generally planar and rectangular in form, a means of securing or affixing said semiconductor circuit(s) to said base generally by adhesive(s), soldering or direct fusion, a planar structural member of electrically non-conductive material with means to allow mass flow through said member generally by the inclusion of opening(s) or aperture(s), a means of establishing an internal electrical connection network or array generally by depositing electrically conductive circuit traces upon said structural member, a means of securing or affixing said base and circuit(s) assemblage to said structural member generally by adhesive(s), a means of electrically connecting said circuit(s) to said connection network generally by soldering wirebonds between the terminations on said circuit(s) and the electrical network, a complimentary planar structural member or carrier base of electrically non-conductive material with means to allow access to said circuit(s) generally by the inclusion of a central rectangular opening in said member, a means of extending said internal electrical connection network to an externally accessable connection array of application circuit systems generally by the inclusion of electrically conductive pins passing through said carrier base, a means of sealing or fortifying said external connection array or pins generally with solder, a means of securing and sealing the access opening in said complimentary member generally by the use of a coverplate and adhesive(s), a means of affixing said base carrier assemblage to said complimentary structural member assemblage generally with electrically non-conductive adhesive(s), a heat exchanger further comprising;
an internal heat exchanger vessal layer with a means of collecting and directing mass flow through said internal vessal layer generally by forming multiple intrinsic dome-like structures and a means for mass flow through said vessal layer generally by the inclusion of aperture(s), orifice(s), nozzle(s) and or valve(s), an external heat exchanger vessal layer with a means for volumetric chambering(s) and interconnection generally by forming multiple intrinsic dome-like structures complimentary to those of the internal vessal layer and interconnected by ducts and a means of externally accessing said volumetric chambering(s) generally by the inclusion of an intrinsic charging valve, a mass of thermally conductive spheroids contained in the chambering(s) bounded by the internal and external heat exchanger vessal layers, a means of sealing and affixing the external vessal layer assemblage to the internal vessal layer assemblage generally by spot welding and perimeter seam welding, a mass of thermally conductive spheroids fused to the external surface of the external vessal layer assemblage generally in a fin-like diagonal form, a means for enhancing radiative heat transfer from said fused spheroid exterior generally by the deposition of highly emissive/reflective materials as surface coating(s) on said exterior spheroid surfaces, a means of mass flow generally by the use of a working fluid or coolant, a means of securing and affixing said heat exchanger assemblage to said circuit carrier assemblage generally by adhesive(s).
2. An integrated circuit carrier package as defined in claim 1 wherein the materials comprising the invention are anti-corrosive and chemically non-reactive.
3. An integrated circuit carrier package as defined in claim 1 wherein the principle components of the heat exchange apparatus are comprised of copper.
4. An integrated circuit carrier package as defined in claim 1 wherein the principle components of the heat exchange apparatus are comprised of stainless steel.
5. An integrated circuit carrier package as defined in claim 1 wherein the working fluid comprises an inert gas.
6. An integrated circuit carrier package as defined in claim 1 wherein the working fluid comprises helium.
7. An integrated circuit carrier package as defined in claim 1 wherein the working fluid comprises a flourocarbon liquid.
8. An integrated circuit carrier package as defined in claim 1 wherein the reflective surface coating comprises gold.
9. An integrated circuit carrier package as defined in claim 1 wherein the reflective surface coating comprises chromium.
10. An integrated circuit carrier package as defined in claim 1 wherein the reflective surface coating comprises nickel.
11. An integrated circuit carrier package as defined in claim 1 wherein the emissive surface coating is comprised of an oxide.
12. An integrated circuit carrier package as defined in claim 1 wherein the emissive surface coating comprises carbon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000570055A CA1261482A (en) | 1988-06-22 | 1988-06-22 | Self-contained thermal transfer integrated circuit carrier package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000570055A CA1261482A (en) | 1988-06-22 | 1988-06-22 | Self-contained thermal transfer integrated circuit carrier package |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1261482A true CA1261482A (en) | 1989-09-26 |
Family
ID=4138249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000570055A Expired CA1261482A (en) | 1988-06-22 | 1988-06-22 | Self-contained thermal transfer integrated circuit carrier package |
Country Status (1)
| Country | Link |
|---|---|
| CA (1) | CA1261482A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0471552A1 (en) * | 1990-08-14 | 1992-02-19 | Texas Instruments Incorporated | Heat transfer module for ultra high density and silicon on silicon packaging applications |
| EP0510734A1 (en) * | 1991-02-20 | 1992-10-28 | Akzo Nobel N.V. | Heat exchanging member, more particularly for cooling a semiconductor module |
| EP0530002A1 (en) * | 1991-08-30 | 1993-03-03 | Yamaichi Electronics Co., Ltd. | IC carrier or IC socket |
| EP0865082A1 (en) * | 1995-11-28 | 1998-09-16 | Hitachi, Ltd. | Semiconductor device, process for producing the same, and packaged substrate |
| WO1999009594A1 (en) * | 1997-08-20 | 1999-02-25 | Frank Baxmann | Sintered heat sink |
| EP1263040A2 (en) * | 2001-06-01 | 2002-12-04 | Delphi Technologies, Inc. | High performance heat sink for electronics cooling |
-
1988
- 1988-06-22 CA CA000570055A patent/CA1261482A/en not_active Expired
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0471552A1 (en) * | 1990-08-14 | 1992-02-19 | Texas Instruments Incorporated | Heat transfer module for ultra high density and silicon on silicon packaging applications |
| EP0510734A1 (en) * | 1991-02-20 | 1992-10-28 | Akzo Nobel N.V. | Heat exchanging member, more particularly for cooling a semiconductor module |
| EP0530002A1 (en) * | 1991-08-30 | 1993-03-03 | Yamaichi Electronics Co., Ltd. | IC carrier or IC socket |
| EP0865082A1 (en) * | 1995-11-28 | 1998-09-16 | Hitachi, Ltd. | Semiconductor device, process for producing the same, and packaged substrate |
| EP0865082A4 (en) * | 1995-11-28 | 1999-10-13 | Hitachi Ltd | Semiconductor device, process for producing the same, and packaged substrate |
| US6404049B1 (en) | 1995-11-28 | 2002-06-11 | Hitachi, Ltd. | Semiconductor device, manufacturing method thereof and mounting board |
| US6563212B2 (en) | 1995-11-28 | 2003-05-13 | Hitachi, Ltd. | Semiconductor device |
| US6621160B2 (en) | 1995-11-28 | 2003-09-16 | Hitachi, Ltd. | Semiconductor device and mounting board |
| WO1999009594A1 (en) * | 1997-08-20 | 1999-02-25 | Frank Baxmann | Sintered heat sink |
| EP1263040A2 (en) * | 2001-06-01 | 2002-12-04 | Delphi Technologies, Inc. | High performance heat sink for electronics cooling |
| EP1263040A3 (en) * | 2001-06-01 | 2005-05-25 | Delphi Technologies, Inc. | High performance heat sink for electronics cooling |
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