TW201834035A - 用於晶圓安裝的接收構件 - Google Patents

用於晶圓安裝的接收構件 Download PDF

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TW201834035A
TW201834035A TW106146307A TW106146307A TW201834035A TW 201834035 A TW201834035 A TW 201834035A TW 106146307 A TW106146307 A TW 106146307A TW 106146307 A TW106146307 A TW 106146307A TW 201834035 A TW201834035 A TW 201834035A
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wafer
mounting surface
strain
receiving
map
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TWI680506B (zh
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威普林格馬克斯
魏跟特湯瑪斯
費伯特亞歷山卓
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奧地利商Ev集團E塔那有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本發明係關於一種用於接收及安裝晶圓之接收構件，其具以下特徵： - 一安裝表面(1o)， - 安裝構件，用於將該晶圓安裝在該安裝表面(1o)上，及 - 補償構件(3、4、5、6)，用於作用於尤其可局部地控制該晶圓之局部及/或全域變形之至少部分補償。 此外，此發明係關於一種使用一先前提及的接收構件對準一第一晶圓與一第二晶圓之裝置及方法。

Description

用於晶圓安裝的接收構件
本發明係關於一種如請求項1所主張之用於接收及安裝晶圓之接收構件及一種如請求項8及9所主張之使用如請求項1所主張之接收構件對準一第一晶圓與一第二晶圓之裝置及方法。 此等接收構件或樣本固持件或卡盤可用於多種版本，且一平坦接收表面或安裝表面對於接收構件係決定性的，使得變得越來越小的結構可被準確地對準且接合在整個安裝表面之上的越來越大之晶圓表面上。此在實際接合製程之前實行一所謂的預接合步驟時尤其重要，該所謂的預接合步驟藉由一可分開互連而使晶圓彼此結合。一旦對於定位於一個或兩個晶圓上之所有結構達成＜ 2 µm之一對準精確度或尤其變形值，則晶圓對彼此之高對準精確度尤其重要。在對準標記鄰近，此在用於對準之指示的接收構件及裝置(所謂的對準器，尤其接合對準器)中尤其很好地獲得成功。隨著與對準標記之距離遞增，無法達成具佳於2 µm尤其佳於1 µm且甚至更佳地佳於0.25 µm之對準精確度或尤其變形值之受控制及完善對準。
本發明之目的係改良一般性接收構件，使得可運用其等來達成更精確對準。 運用請求項1、8及9之特徵來達成此目的。 在附屬請求項中給定本發明之有利發展。在說明書、請求項及/或圖中給定的特徵之至少兩者之所有組合亦落於本發明之框架內。在給定值範圍中，指示的限制內之值亦將揭示為邊界值且將在任何組合中主張。 本發明基於根據歐洲專利申請案EP 09012023及EP 10 015 569之申請人之發現，運用EP 09012023，偵測在各晶圓之整個表面尤其表面上之結構之位置(如該晶片之一位置映射)係可能的。EP 10 015 569之發明係關於一種用於運用以下機構來判定當第一晶圓結合至一第二晶圓時已歸因於該第一晶圓相對於該第二晶圓之應變及/或變形發生的局部對準誤差之裝置： - 沿著該第一晶圓之一第一接觸表面之應變值之一第一應變映射，及/或 - 沿著一第二接觸表面之應變值之一第二應變映射，及 - 用於評估該第一應變映射及/或該第二應變映射之評估構件，可藉由該第一應變映射及/或該第二應變映射而判定該等局部對準誤差。 此發明之基本構想係提供一種由若干個作用控制元件組成的接收構件，該若干個作用控制元件彼此獨立且可運用其等影響該接收構件之安裝表面，尤其於形狀及/或溫度。在此，藉由對應之啟動而使用該等作用控制元件，使得補償或者極大部分地最小化或減小藉由位置映射及/或應變映射已知的局部對準誤差或局部變形。在此，不僅消除局部變形，且同時最小化或校正出現自局部變形之完全在晶圓其外側尺寸之一宏觀變形或伸展。 因此，如本發明所主張，尤其與關於位置映射、應變映射及/或應力映射及其中在進行接觸及接合晶圓期間揭示的對準錯失之原位校正之上文描述的本發明組合，可能藉由作用於尤其局部作用於晶圓之變形而達成一仍較好對準結果。 根據本發明之一有利實施例，假設安裝表面之溫度可局部地受補償構件影響。該安裝表面之一局部溫度增大導致固持在該安裝表面上之晶圓在此位置處之局部膨脹。溫度梯度越高，晶圓在此位置處膨脹越多。基於位置映射及/或應變映射之資料之尤其對準誤差之向量評估，尤其對於位置映射及/或應變映射之各位置，可能以一受控制方式作用於局部晶圓變形或抵消局部晶圓變形。 在此點上，向量評估定義為具變形向量之一向量場，尤其已藉由下文描述的本發明之兩種版本之一者判定該場。 第一版本係關於結構化兩個晶圓之僅一者之申請案。在此情況下，如本發明所主張，假設偵測結構之偏差，尤其幾何形狀與所要形狀之偏差。在此情況下，特殊關注曝光場(尤其一分步重複曝光裝置之曝光場)之形狀與習知長方形之標稱預期形狀之偏差。可基於根據EP 09012023之對應於曝光場之個別對準標記之一位置映射之偵測而發生此等偏差(尤其描述此等偏差之向量場)。替代地，亦可基於藉由EP 10 015 569.6獲取的應力映射及/或應變映射而判定此向量場。然而有利地，如本發明所主張，此向量場亦可藉由任何其他適合量測方式來判定且可被讀入。特定言之，運用一特殊測試光罩及/或一特殊測試常式操作用於獲取此等資料之分步重複微影術系統適合於此量測。 第二版本係關於結構化兩個晶圓之申請案。在此情況下，如本發明所主張，假設對於根據EP 09012023之位置映射(尤其第一位置映射及第二位置映射)之所有位置計算對準偏差之向量場。根據EP 10 015 569.6之材料，尤其對於對準位置(根據技術及/或經濟準則其被視為理想的)判定此向量場。 在本發明之另一有利實施例中，假設安裝表面之應變可局部地受補償構件(尤其受可在該安裝表面之一背面上較佳地個別地啟動之壓電式元件之配置)影響。藉由伸展或收縮(因此負伸展)，據此安裝表面(亦晶圓)尤其藉由自安裝表面作用於晶圓上之安裝力而形變(尤其伸展或收縮)，使得以此方式可基於已對於此晶圓判定的應變映射之值藉由一對應控制構件以一受控制方式影響該晶圓。至安裝表面之形狀可局部地受補償構件(尤其較佳地受在一Z方向上之機械作用)影響之程度，存在抵消晶圓在該安裝表面上變形之另一可能性。在此，亦適用藉由一控制構件而發生補償構件之控制，該控制構件基於位置映射值及/或應變映射值而從事該補償構件之一對應專用局部控制。 控制構件尤其包含用於執行/計算對應常式之軟體。 根據本發明之另一有利實施例，假設安裝表面可局部地曝露至藉由補償構件之來自安裝表面之背面之壓力，尤其水動式及/或氣動式。以此方式，安裝表面之形狀可同樣受影響使得出現先前提及的效果。同樣控制藉由上文描述的控制構件而再次發生。 有利地，補償構件提供作為尤其整合較佳嵌入至安裝表面中之接收構件中之複數個作用控制元件。因此，接收構件之一接收器可製成單片的，同樣如已知接收構件中之情況。 在此，尤其有利的是若可分開地啟動各控制元件或控制元件之群組。據此，局部啟動意指可由補償構件局部地啟動一小抽出物，尤其小於晶圓之一半較佳地小於晶圓之1/4較佳地小於晶圓之1/8甚至更佳地小於晶圓之1/16之一抽出物。尤其有利的是若補償構件可運用至少一控制元件作用於由其自身結構佔有的晶圓之各區域。 如本發明所主張之裝置包括有利於一中央控制單元之上文描述的控制構件，該中央控制單元負責所有控制製程。但是如本發明所主張，可想像在接收構件中提供控制構件尤其作為一總裝置之一模組。 仍可藉由存在繼對準後之第一晶圓及/或第二晶圓之位置映射及/或應變映射之一獲取(尤其重複獲取)而進一步改良如本發明所主張之方法。因此，如本發明所主張，繼完成對準之後，可存在對準成功之檢查。據此，可想像消除具過度大之對準誤差之一晶圓對以(例如)如本發明所主張而再次對準其等或佈置其等。同時，獲取的資料可用於裝置(尤其藉由控制構件)之自校準。 在歐洲專利申請案EP 09012023.9及/或歐洲專利申請案EP 10 015 569.6中揭示的本發明將被視為在相同於此發明之實施例之時間附隨地揭示。
本發明之其他優點、特徵及細節將自較佳例示性實施例之下文描述及使用圖式而變得顯而易見。 在圖中運用相同參考數字識別相同組件/特徵及具相同作用之組件/特徵。 所有四個實施例展示一單片接收器1，該單片接收器1(如一平坦較佳圓環狀板)具備用於接收及安裝晶圓之一平坦安裝表面1o。在外周邊上該接收器具有一環狀肩部1a。 安裝表面1o形成用於接收晶圓之一接收平面，該平面在X方向及Y方向上延伸。指出作用於晶圓之安裝力之Z方向垂直於X方向及Y方向而運行。晶圓之安裝透過開孔2而發生，該等開孔2經配置以複數形式均等地分佈在安裝表面1o之上以能夠藉由將負壓力施加於該等開孔2而將該晶圓固持在該安裝表面1o上。開孔2之數目越大及該等開孔2之直徑越小，在開孔2上支配用於安裝晶圓之負壓力越小，導致在該等開孔2上之晶圓之變形。 經由未展示且將負壓力施加至定位於安裝表面1o之背面側上之一內部空間1i之一真空構件而施加開孔2上之負壓力。此外，該內部空間1i毗連接收器1之一周邊壁1w且相對於鄰近而密封。該等開孔2自該安裝表面1o延伸直至該內部空間1i且可因此均等地曝露至在該內部空間1i中支配之負壓力。 此外，內部空間1i毗連相對安裝表面1o定位的背面1r且毗連未展示的該內部表面1i之底部，開孔2貫穿該背面1r。 在背面1r上，作用控制元件係複數個加熱/冷卻元件，尤其專門加熱元件3。該等加熱元件3各被個別地或群組地啟動，控制藉由未展示之一控制構件而發生。當加熱該等加熱元件3之一者時，藉由接收器之具非常良好熱傳導之材料(尤其金屬)加熱安裝表面1o之一局部區段。此導致位於該安裝表面1o上之一晶圓在此區域中局部膨脹。因此，對於據此經固持對準在接收構件上且與可能變形/應變之一已知位置對準之晶圓，可以一受控制方式藉由切換個別或若干個加熱元件3以補償局部變形致使該晶圓之一形變。尤其對於複數個局部補償，此亦產出尤其在X方向及/或Y方向上之晶圓直徑之一變更之全域變形之全域補償。 藉由加熱及/或冷卻元件而影響晶圓上之變形之一特殊優點在於可能能夠尤其在安裝表面不形變及/或尤其在垂直方向或Z方向上之晶圓不形變之情況下以最小形變達成此。在此點上，最小形變應被視為安裝表面之形變且尤其在垂直方向或Z方向上之晶圓相對於支撐表面＜5 µm有利地＜2 µm較佳地＜1 µm且甚至更佳地＜0.5 µm之形變。 此尤其有利於產生預接合互連，例如基於van-der-Waals接合之預接合。基於在此可使安裝表面及尤其晶圓保持平坦之事實，在此等預接合步驟中習知的接合波在其傳播中不會受不均勻影響。因此，大大地降低依舊未接合部位(所謂的孔洞)之風險。對於產生此等預接合互連，如本發明所主張，需要安裝表面在整個晶圓表面之上之均勻度 ＜5 µm，有利地＜2 µm，較佳地＜1 µm且甚至更佳地＜0.5 µm。此等均勻度值定義為與晶圓接觸之安裝表面之該部分內的最高點與最低點之間的距離。 有利地，加熱元件3均等地分佈在安裝表面1o下。有利地，在接收構件中存在10個以上加熱元件3，尤其50個以上加熱元件3，較佳地100個以上加熱元件3，甚至更佳地500個以上加熱元件3。此等加熱元件形成可在安裝表面中分開地啟動且可使能局部作用於晶圓上之區域。有利地，安裝表面之個別區域運用適合構件而彼此熱絕緣。特定言之，區域係以使能均等及封閉配置個別片段之一形式製成。有利地，如三角形、正方形或六邊形之片段之執行適合於此目的。 特定言之，Peltier元件適合作為加熱元件3。 在圖2a及圖2b中展示的第二實施例中，未展示加熱元件3且代替或組合其等在安裝表面1o上存在壓電式元件4，較佳地與背面1r之距離大於與該安裝表面1o之距離。 以此方式，受控制地作用於安裝表面1o係可能的。壓電式元件4當啟動時可致使在奈米至微米範圍中之應變。 壓電式元件4之數目可對應於加熱元件3之先前提及的數目，如本發明所主張可想像兩實施例之一組合。 在圖3a及圖3b中展示的本發明之第三實施例中，代替或組合加熱元件3及/或壓電式元件4，存在終止於安裝表面1o上之具一尤其尖管腳端部5e之管腳5。在該等管腳5之啟始位置中，該管腳端部5e與該安裝平面1o齊平。至存在一晶圓在某一管腳5之區域中之一局部變形(如變形映射或應變映射之資訊)之程度，控制構件可藉由啟動個別或若干個管腳5藉由使管腳5或管腳端部5e在Z方向上在晶圓之方向上移動而局部地作用於該晶圓上。因此，管腳端部5e使晶圓局部地曝露至一壓縮力，該壓縮力提供該晶圓在此點處之一局部凸出或撓曲。管腳5可經引導以作為一整體在一引導開孔7中滑動，該引導開孔7自安裝表面1o延伸直至背面1r。替代地，僅管腳端部5e可在管腳5中移動且管腳5或該管腳之下區段係相對於引導開孔7而固定的。以此方式，可確保相對於內部空間1i而特殊密封管腳5或數個管腳5。 管腳5之數目對應於壓電式元件4或加熱元件3之數目，在此組合先前提及的實施例之一或多者係可能的。 在圖4中展示的實施例中，接收1具有複數個壓力室6，其等與在圖4b中展示的該複數個壓力室6之上壁6o形成安裝表面1o。壓力室6延伸通過內部空間1i且相對於此內部空間1i而密封。壓力室6之各者或壓力室6之群組可分開地加壓，且控制可藉由描述的控制構件而發生。當施加壓力時，使壓力室6至少在其之上壁6o上使得其在施加壓力時屈變，因此使該上壁薄於及/或軟於壓力室6之其他邊界壁。開孔2連接至內部空間1i。 如本發明所主張，安裝表面1o之一簡單最小局部撓曲藉由先前提及的補償構件3、4、5、6而發生達一最大值3 µm，尤其一最大值1 µm，較佳地一最大值100 nm。 為了能夠抵消關於先前提及的實施例之一或多者之局部變形，如上文描述，控制構件有必要知道晶圓之變形存在於何處及至什麼程度或在什麼方向上。僅如此變形之受控制作用或抵消及補償係可能的。各晶圓之應變映射產出依分佈在晶圓之上且已運用根據EP 10 015 569.6之一對應量測構件判定的應變向量之形式之資訊。對應控制資料可存檔在控制單元中(尤其經驗判定)，以能夠根據晶圓在由該晶圓之位置映射指示的位置處之應變映射而對於晶圓從事一個別控制。可在對準晶圓期間以此方式自動地實行補償。 在圖中作用控制元件3、4、5、6未按比例展示且亦可具有不同大小及形狀。
1‧‧‧接收器
1a‧‧‧環狀肩部
1i‧‧‧內部空間
1o‧‧‧安裝表面
1r‧‧‧背面
1w‧‧‧周邊壁
2‧‧‧開孔
3‧‧‧加熱/冷卻元件
4‧‧‧壓電式元件
5‧‧‧管腳
5e‧‧‧管腳端部
6‧‧‧壓力室
6o‧‧‧上壁
7‧‧‧引導開孔
圖1a展示在一第一實施例中之如本發明所主張之一接收構件之一平面圖， 圖1b展示根據來自圖1a之切割線A-A之接收構件之一橫截面圖， 圖2a展示在一第二實施例中之如本發明所主張之一接收構件之一平面圖， 圖2b展示根據來自圖2a之切割線B-B之接收構件之一橫截面圖， 圖3a展示在一第三實施例中之如本發明所主張之一接收構件之一平面圖， 圖3b展示根據來自圖3a之切割線C-C之接收構件之一橫截面圖， 圖4a展示在一第四實施例中之如本發明所主張之一接收構件之一平面圖， 圖4b展示根據來自圖4a之切割線D-D之接收構件之一橫截面圖。

Claims (10)

  1. 一種用於接收及安裝晶圓之接收構件，其具以下特徵： 一安裝表面(1o)， 安裝構件，用於將該晶圓安裝在該安裝表面(1o)上，及 補償構件(3、4、5、6)，用於主動的、尤其可局部地控制該晶圓之局部變形(distortions)及/或全域變形之至少部分補償。
  2. 如請求項1之接收構件，其中該安裝表面(1o)之溫度可局部地受該補償構件(3、4、5、6)影響。
  3. 如請求項1或2之接收構件，其中該安裝表面(1o)之應變可局部地受該補償構件(3、4、5、6)影響，尤其受壓電式元件(4)之配置影響，該壓電式元件較佳地可在該安裝表面(1o)之一背面(1r)上個別地啟動(activated)。
  4. 如請求項1或2之接收構件，其中該安裝表面(1o)之形狀可局部地受該補償構件(3、4、5、6)影響，尤其是較佳的受一Z方向上之機械作用(mechanical action)之影響。
  5. 如請求項1或2之接收構件，其中該安裝表面(1o)可局部地曝露至來自該安裝表面(1o)之該背面(1r)之壓力，該安裝表面(1o)之該背面(1r)之壓力係藉由該補償構件(3、4、5、6)，尤其液動式(hydraulically)及/或氣動式(pneumatically)。
  6. 如請求項1或2之接收構件，其中該補償構件(3、4、5、6)作為該接收構件中之複數個主動(active)控制元件(3、4、5、6)，尤其是被整合，較佳的是被嵌入，至該安裝表面(1o)中。
  7. 如請求項6之接收構件，其中若干控制元件(3、4、5、6)之個別控制元件(3、4、5、6)或群組可分別地被啟動。
  8. 一種用於對準一第一晶圓與一第二晶圓之裝置，其具以下特徵： 判定構件，其用於使用該第一晶圓之一第一應變映射及/或該第二晶圓之一第二應變映射及用於評估該第一應變映射及/或該第二應變映射之評估構件，來判定歸因於該第一晶圓相對於該第二晶圓之應變及/或變形而發生之局部對準誤差(local alignment errors)， 至少一如請求項1至7中任一項之接收構件，用於接收該等晶圓之至少一者，及 對準構件，用於考量位置映射及/或應變映射及藉由補償構件同時補償而對準該等晶圓。
  9. 一種用於對準一第一晶圓與一第二晶圓之方法，其具以下步驟，尤其具以下順序： 偵測該第一晶圓之第一應變映射及/或該第二晶圓之第二應變映射及藉由評估構件對該第一應變映射及/或第二應變映射之評估及該等局部對準誤差之判定， 在如請求項1至7中之任一項之一接收構件上接收該等晶圓之至少一者，及 考量位置映射及/或應變映射及藉由補償構件之同時補償而對準該等晶圓。
  10. 如請求項9之方法，其中在對準之後，存在對於該第一晶圓及/或該第二晶圓之位置映射及/或應變映射之一偵測，尤其是重複偵測。
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