SG11201911800XA - Measuring device and method for determining the course of a bonding wave - Google Patents

Measuring device and method for determining the course of a bonding wave

Info

Publication number
SG11201911800XA
SG11201911800XA SG11201911800XA SG11201911800XA SG11201911800XA SG 11201911800X A SG11201911800X A SG 11201911800XA SG 11201911800X A SG11201911800X A SG 11201911800XA SG 11201911800X A SG11201911800X A SG 11201911800XA SG 11201911800X A SG11201911800X A SG 11201911800XA
Authority
SG
Singapore
Prior art keywords
course
determining
measuring device
bonding wave
bonding
Prior art date
Application number
SG11201911800XA
Inventor
Dominik Zinner
Jürgen Mallinger
Thomas Plach
Boris Povazay
Harald Rohringer
Jürgen Markus Süss
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of SG11201911800XA publication Critical patent/SG11201911800XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/16—Measuring arrangements characterised by the use of optical techniques for measuring the deformation in a solid, e.g. optical strain gauge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08135—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/08145—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08245—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/8012—Aligning
    • H01L2224/80121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8013—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/80001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/80908—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
SG11201911800XA 2019-01-18 2019-01-18 Measuring device and method for determining the course of a bonding wave SG11201911800XA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2019/051244 WO2020147964A1 (en) 2019-01-18 2019-01-18 Measurement device and method for determining the progression of a bond wave

Publications (1)

Publication Number Publication Date
SG11201911800XA true SG11201911800XA (en) 2020-08-28

Family

ID=65041768

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201911800XA SG11201911800XA (en) 2019-01-18 2019-01-18 Measuring device and method for determining the course of a bonding wave

Country Status (8)

Country Link
US (1) US20220026196A1 (en)
EP (1) EP3912185A1 (en)
JP (1) JP7284274B2 (en)
KR (1) KR20210114504A (en)
CN (1) CN113302727A (en)
SG (1) SG11201911800XA (en)
TW (1) TW202104834A (en)
WO (1) WO2020147964A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114623774A (en) * 2022-03-14 2022-06-14 上海华方巨量半导体科技有限公司 Method for measuring gap between source substrate and receiving substrate for transferring micro-assembly

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0227556A1 (en) * 1985-12-24 1987-07-01 Schlumberger Industries Optical sensor for physical magnitudes
FR2839147B1 (en) * 2002-04-30 2004-07-09 Soitec Silicon On Insulator DEVICE AND METHOD FOR AUTOMATICALLY CONTROLLING THE CONDITION OF THE PLATE SURFACE BY MEASURING THE ADHESIVE SPEED
US7479441B2 (en) 2005-10-14 2009-01-20 Silicon Genesis Corporation Method and apparatus for flag-less water bonding tool
JP5343326B2 (en) * 2007-05-29 2013-11-13 株式会社ニコン Substrate bonding apparatus and substrate bonding method
US7682933B1 (en) * 2007-09-26 2010-03-23 The United States Of America As Represented By The Secretary Of The Air Force Wafer alignment and bonding
FR2962594B1 (en) 2010-07-07 2012-08-31 Soitec Silicon On Insulator MOLECULAR ADHESION BONDING METHOD WITH RADIAL DESALIGNMENT COMPENSATION
FR2965398B1 (en) 2010-09-23 2012-10-12 Soitec Silicon On Insulator MOLECULAR ADHESION COLLAGE PROCESS WITH OVERLAY TYPE RELOCATION REDUCTION
KR20130139251A (en) * 2010-11-12 2013-12-20 에베 그룹 에. 탈너 게엠베하 Measuring device and method for measuring layer thicknesses and defects in a wafer stcak
EP2463892B1 (en) 2010-12-13 2013-04-03 EV Group E. Thallner GmbH Device, assembly and method for detecting alignment errors
KR101849443B1 (en) 2010-12-20 2018-04-16 에베 그룹 에. 탈너 게엠베하 Receiving means for mounting of wafers
TW201333787A (en) * 2011-10-11 2013-08-16 Flatfrog Lab Ab Improved multi-touch detection in a touch system
EP3404698B1 (en) * 2013-05-29 2023-08-16 EV Group E. Thallner GmbH Method for bonding substrates
KR102075191B1 (en) 2013-06-05 2020-02-07 에베 그룹 에. 탈너 게엠베하 Measuring device and method for ascertaining a pressure map
US9646860B2 (en) * 2013-08-09 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Alignment systems and wafer bonding systems and methods
JP5786990B2 (en) * 2014-02-26 2015-09-30 株式会社ニコン Joining apparatus, joining method, and manufacturing method
JP5950994B2 (en) * 2014-12-26 2016-07-13 株式会社新川 Mounting device
WO2017115684A1 (en) * 2015-12-28 2017-07-06 株式会社ニコン Substrate bonding device and substrate bonding method
CN114334624A (en) * 2016-02-16 2022-04-12 Ev 集团 E·索尔纳有限责任公司 Apparatus and method for bonding substrates
JP6820189B2 (en) * 2016-12-01 2021-01-27 東京エレクトロン株式会社 Joining equipment, joining systems, joining methods, programs and computer storage media
KR102395194B1 (en) * 2017-06-21 2022-05-06 삼성전자주식회사 Wafer bonding apparatus, and wafer bonding system comprising the same apparatus
KR102576705B1 (en) * 2018-08-30 2023-09-08 삼성전자주식회사 Apparatus for bonding substrates and method of bonding substrates
US11543363B2 (en) * 2019-05-24 2023-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for wafer bond monitoring

Also Published As

Publication number Publication date
CN113302727A (en) 2021-08-24
WO2020147964A1 (en) 2020-07-23
EP3912185A1 (en) 2021-11-24
TW202104834A (en) 2021-02-01
KR20210114504A (en) 2021-09-23
JP2022522604A (en) 2022-04-20
JP7284274B2 (en) 2023-05-30
US20220026196A1 (en) 2022-01-27

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