CN103283000A - 用于保持晶片的容纳装置 - Google Patents

用于保持晶片的容纳装置 Download PDF

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CN103283000A
CN103283000A CN2010800707972A CN201080070797A CN103283000A CN 103283000 A CN103283000 A CN 103283000A CN 2010800707972 A CN2010800707972 A CN 2010800707972A CN 201080070797 A CN201080070797 A CN 201080070797A CN 103283000 A CN103283000 A CN 103283000A
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M.温普林格
T.瓦根莱特纳
A.菲尔伯特
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EV Group E Thallner GmbH
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract

本发明涉及用于容纳并且保持晶片的容纳装置，具有下面的特征：保持面（1o），用于将晶片保持在保持面（1o）上的保持装置和-补偿装置（3，4，5，6），用于对晶片的局部和/或全局变形进行主动的、尤其是局部可控制的、至少部分的补偿。本发明还涉及用于使用前述容纳装置将第一晶片与第二晶片对齐的装置和方法。

Description

用于保持晶片的容纳装置
技术领域
本发明涉及按照权利要求1的用于容纳并且保持晶片的容纳装置和按照权利要求8和9的用于在使用按照权利要求1的容纳装置的情况下将第一晶片与第二晶片对齐的装置和方法。
背景技术
这种容纳装置或者样品保持器或夹盘以许多实施方式存在，并且对于容纳装置，平坦的容纳面或者保持面是决定性的，由此在越来越大的晶片面上的变得越来越小的结构可以在整个晶片面上被正确地对齐和接触。如果所谓的预键合步骤（该预键合步骤将晶片借助可分离的连接相互连接）在实际的键合过程之前执行的话，这是特别重要的。只要对于所有在一个或两个晶片上设置的结构应当实现＜2μm的对准精度或者尤其是变形值，晶片彼此之间的高度对齐精度就是特别重要的。在已知的容纳装置和用于对齐的装置（即所谓的对准器、尤其是键合对准器）中，在对齐标记附近这能非常好地达到。随着离对齐标记的距离的增大，具有好于2μm、优选好于1μm并且进一步优选好于0.25μm的对齐精度或尤其是变形值的经检查并且完美的对齐是不可实现的。
发明内容
本发明的任务是，这样改善按照类型的容纳装置，使得利用其可以实现更精确的对齐。
该任务利用权利要求1、8和9的特征来解决。
本发明的有利的改进方案在从属权利要求中说明。落入本发明的范畴中的还有在说明书、权利要求和/或附图中说明的特征的至少两个的全部组合。在所说明的值范围中，在所述界限内的值也应当作为界限值被公开并且可以以任意组合被请求保护。
本发明基于按照欧洲专利申请EP 09012023和EP10 015 569的申请人的认识，其中利用前面提到的认识，整个表面的检测、尤其是将在每个晶片表面上的结构的位置作为晶片位置图是可能的。后面提到的发明涉及用于求得在将第一晶片与第二晶片连接时由于第一晶片相对于第二晶片的伸长和/或变形而出现的局部对齐误差的装置，具有：
-沿着第一晶片的第一接触面的伸长值的第一伸长图和/或
-沿着第二接触面的伸长值的第二伸长图和
-用于分析第一和/或第二伸长图的分析装置，通过其可以求得局部的对齐误差。
在此，本发明的基本思想在于，设置由多个、相互独立的有源控制元件构成的容纳装置，利用这些控制元件容纳装置的保持面尤其是在形状和/或温度方面能够被影响。在此，这些有源控制元件通过相应的操控被使用，使得借助位置图和/或伸长图而已知的局部对齐误差或者局部变形被补偿或者最大程度地最小化或者减少。在此，不仅仅克服了局部变形，而且同时最小化或者校正了由局部变形在整体上产生的、晶片在其外部尺寸上的宏观变形或伸长。
因此，根据本发明，在将上面描述的涉及位置图、伸长图和/或应力图的发明以及在那里公开的对在接触和键合晶片时的对齐误差的就地校正进行组合的情况下，尤其可能的是：通过对晶片变形的主动的、尤其是局部的作用来实现进一步改善的对齐结果。
按照本发明的一个有利的实施方式规定，能够通过补偿装置来局部影响保持面的温度。保持面的局部温度升高导致保持在保持面上的晶片在该位置处的局部膨胀。温度梯度越高，晶片在该位置处的膨胀越多。从而基于位置图和/或膨胀图的数据，尤其是对齐误差的矢量分析，尤其是针对位置图和/或膨胀图的每个位置，可以有针对性地作用于晶片的局部变形或者对抗所述局部变形。
在该背景下，矢量分析被理解为带有变形矢量的矢量场，该矢量场尤其借助两个后面描述的本发明变型之一来求得。
第一变型涉及其中仅仅结构化两个晶片之一的应用情形。在该情形中，按照本发明规定，检测结构的偏差、尤其是几何形状与所希望的几何形状的偏差。在该情形下，尤其感兴趣的是，曝光区、尤其是多次重复曝光的曝光设备的曝光区的形状与标称的期望形状的偏差，所述标称的期望形状通常是矩形。这些偏差、尤其是描述这些偏差的矢量场可以按照EP 09012023基于对各个与曝光区相对应的对齐标记的位置图的检测来完成。代替地，该矢量场也可以基于借助EP 10 015 569.6所检测的应力图和/或伸长图来求得。但是，按照本发明该矢量场也可以有利地由任何其他合适的测量装置求得并且读入。多次重复曝光的光刻系统尤其是适用这种测量，这些光刻系统为了检测所述数据而用特定的测试掩模和/或特定测试例程运行。
第二变型涉及在其中两个晶片被结构化的应用情形。在该情形下，根据本发明规定，尤其是针对位置图、尤其是按照EP 09012023的第一和第二位置图的所有位置计算对齐偏差的矢量场。该矢量场应当根据在EP 10 015 569.6中的实施方式尤其是针对按照技术和/或经济标准被看作是理想的对齐位置来求得。
在本发明的另一有利的实施方式中规定，通过补偿装置可以局部地影响保持面的伸长，尤其是通过在保持面的背面处布置优选单独可操控的压电元件。通过保持面的伸长或者收缩、也即负伸长，尤其是通过由保持面作用在晶片上的保持力也相应地使得该晶片变形、尤其是伸长或收缩，使得通过该方式可以基于为该晶片求得的伸长图的值通过相应的控制装置有针对性地影响该晶片。只要通过所述补偿装置、尤其是通过在Z方向上的优选机械作用能够局部地影响保持面的形状，就存在另外的对抗在保持面上的晶片的变形的可能性。这里也适用的是，对补偿装置的控制通过控制装置来完成，该控制装置基于位置图和/或伸长图的值来进行相应地有针对性的、对补偿装置的局部控制。
控制装置尤其包括用于实施/计算相应例程的软件。
按照本发明的另一有利实施方式规定，从保持面的背面通过补偿装置局部地、尤其是液动和/或气动地对保持面施加压力。由此，同样可以对保持面的形状产生影响，从而得到上述的效应。该控制同样又通过上面描述的控制装置来进行。
有利地，将补偿装置设置为集成、优选嵌入在容纳装置、尤其是保持面中的多个有源控制元件。由此，可以单片地构造容纳装置的容纳部，如其在已知的容纳装置中同样的情况一样。
在此特别有利的是，能够单独地操控每个控制元件或控制元件组。局部的操控相应地是指，小的区段、尤其是小于晶片一半、优选小于晶片1/4、优选小于晶片1/8、进一步优选小于晶片1/16的区段，能够通过补偿装置被局部地操控。特别有利的是，补偿装置可以利用至少一个控制元件作用于晶片的每一个被自己的结构占据的区域。
本发明的装置在负责所有控制过程的中央控制单元中有利地包括前面描述的控制装置。然而按照本发明可以考虑的是，在容纳装置中设置控制装置，尤其是作为整体装置的模块。
按照本发明的方法可以通过如下方式被进一步改善，即规定在对齐之后对第一和/或第二晶片的位置图和/或伸长图进行尤其是再次的检测。由此按照本发明可以规定在完成了对齐之后对对齐完成进行检验。相应地可以考虑，进行具有过大对齐误差的晶片对的排除，以便例如重新对其进行按照本发明的对齐或清洁。同时，可以将检测的数据用于尤其是借助控制装置对该装置进行自校准。
在欧洲专利申请EP 09012023.9和/或欧洲专利申请 EP 10 015 569.6公开的发明中，作为实施方式一同公开的同时适于本发明。
附图说明
本发明的其它优点、特征和细节从优选实施例的以下描述中以及借助附图得到，其中：
图1a示出了在第一实施方式中本发明的容纳装置的俯视图，
图1b示出了容纳装置的按照图1a中剖线A-A的截面视图，
图2a示出了在第二实施方式中本发明的容纳装置的俯视图，
图2b示出了容纳装置的按照图2a中剖线B-B的截面视图，
图3a示出了在第三实施方式中本发明的容纳装置的俯视图，
图3b示出了容纳装置的按照图3a中剖线C-C的截面视图，
图4a示出了在第四实施方式中本发明的容纳装置的俯视图，
图4b示出了容纳装置的按照图4a中剖线D-D的截面视图。
在附图中，相同的和作用相同的部件/特征用相同的参考标号表示。
具体实施方式
所有4个实施方式示出了单片的容纳部1，它们被设置为平面的、优选圆形的盘片，该盘片带有用于容纳和保持晶片的平整平坦保持面1o。在外周上，容纳部具有环状凸缘1a。
保持面1o构成用于容纳晶片的容纳平面，该容纳平面在X和Y方向上延伸。Z方向与其垂直地延伸，作用于晶片上的保持力定向在Z方向上。晶片的保持通过开孔2进行，所述开孔大量地相同形状地分布在保持面10上地布置，以便能够通过对开孔2施加欠压将晶片保持在保持面1o上。开孔2的数量越大并且开孔2的直径越小，施加在开孔2处的用于保持晶片的欠压越少地导致晶片在开孔2处的变形。
在开孔2处的欠压通过未示出的真空装置施加，该真空装置对布置在保持面1o的背面的内部空间1i施加欠压。内部空间1i此外通过容纳部1的环周壁1w界定并且相对于环境被密封。开孔2从保持面1o延伸至内空间1i并且因此同样可被施加以在内部空间1i中占主导的欠压。
内部空间1i此外通过相对着保持面1o布置的背面1r以及未被示出的内部空间1i的底部界定，其中背面1r被开孔2穿过。
作为有源控制元件在背面1r上设置有多个加热/冷却元件，尤其是仅仅设置加热元件3。加热元件3分别被单独地或者成组地操控，其中该控制通过未示出的控制装置来完成。在加热加热元件3之一时，通过容纳部的非常好地导热的材料（尤其是金属）来加热保持面1o的局部区段。这导致处于保持面1o上的晶片在该区域中的局部膨胀。因此在容纳装置上容纳的晶片被相应地对齐和可能的变形/伸长的位置已知的情况下有针对性地通过开关单个或多个加热元件3引起晶片的变形，以便补偿局部的变形。由此，尤其是在大量局部补偿的情况下，也得到对全局变形的、尤其是晶片的直径在X和/或Y方向的改变的全局补偿。
借助加热和/或冷却元件对晶片处的变形进行影响的特殊优点在于如下可能性：能够以最小变形、尤其是无保持面变形和/或尤其是无晶片在垂直方向或Z方向上的变形地实现该影响。在该背景下可以看作是最小形变的是，保持面和尤其是晶片在垂直方向（也即竖直方向或者Z方向）相对于安装面的变形＜5μm，有利地＜2μm，优选＜1μm并且进一步优选＜0.5μm。这尤其是对于制造预键合连接、例如对于基于Van-der-Waals连接的预键合是有利的。由于这里保持面并且尤其是晶片可以保持平坦的事实，在这样的预键合步骤中常见的键合波纹不会在其扩散中被不平坦所影响。因此，保留未键合部位（所谓的空隙）的风险被大大降低。为了制造这种预键合连接，按照本发明力求在整个晶片面上使保持面的平坦度＜5μm，有利地＜2μm，优选＜1μm并且进一步优选＜0.5μm。平坦度的这些值指的是，在与晶片接触的半面的每个部分内部在最高和最低点之间的距离。
加热元件3有利地在保持面1o下方均匀地分布。有利地，在容纳装置中设置多于10个加热元件3，尤其是多于50个加热元件3，优选多于100个加热元件3，更优选的多于500个加热元件3。这些加热元件形成在保持面中可单独操控的区域，这些区域能够实现对晶片的局部作用。有利地，保持面的各个区域利用合适的装置被相互热隔离。尤其是，这些区域被构造为如下形状，该形状能够实现各个区段的均匀并且封闭的布置。有利地，将这些区段构造为三角形、四角形或者六角形是适合于此的。
作为加热元件3特别适合的是珀耳帖元件。
在图2a和2b中示出的第二实施形式中没有示出加热元件3，代替地或者与其组合地在保持面1o处设置有压电元件4，优选至背面1r的距离大于至保持面1o的距离。通过这种方式实现对保持面1o的有针对性的作用。压电元件4可以在激活时引起在纳米至微米范围中的伸长。
压电元件4的数量可以等于加热元件3的上述数量，其中按照本发明可以考虑这两个实施方式的组合。
在本发明的在图3a和3b中示出的第三实施方式中，代替加热元件3和/或压电元件4或者与其组合地设置有销钉5，这些销钉在保持面1o处以尤其是尖的销钉端部5e结束。在销钉5的输出端位置中，销钉端部5e与保持面1o平齐。只要晶片在确定的销钉5的区域中的局部变形作为变形图或伸长图的信息存在，控制装置就可以通过操控单个或多个销钉5局部地作用于晶片，其方式是，销钉5或者销钉端部5e在Z方向上朝着晶片的方向运动。销钉端部5e由此对晶片局部地施加压力，该压力使得晶片在该部位处局部凸起或者偏转。销钉5可以或者整体地在从保持面1o延伸至背面1r的导向开孔7中滑动地被引导。对此代替地，仅仅销钉端部5e在销钉5中是可运动的并且销钉5或者销钉的下部区段相对于导向开孔7被固定。通过这种方式，可以保证该销钉5或者这些销钉5相对内部空间1r的特别的密封。
销钉5的数量等于压电元件4或加热元件3的数量，其中这里也可以组合一个或多个前述的实施方式。
在图4中所示的实施方式中，容纳部1具有多个压力室6，这些压力室以其在示图4b中示出的上壁6o构成保持面1o。压力室6延伸穿过内部空间1i并且相对于内部空间li被密封。每个压力室6或者压力室6组可以单独地被施加压力，其中该控制可以通过所描述的控制装置来进行。在施加压力的情况下，压力室6至少在其上壁6o处被构造为，使得其在施加压力的情况下变形，也即构造得比压力室6的其他分界壁更薄和/或更柔软。开孔2与内部空间1i连接。
按照本发明，通过前述的补偿装置3，4，5，6仅仅完成对保持面1o的最大3μm，尤其最大1μm，优选最大100nm的最小局部偏转。
为了能够利用前述的实施方式中的一种或多种来对抗局部变形，如上面描述地需要：控制装置知道晶片中的变形存在于何处并且以何种程度或者在什么方向上。然后才能对所述变形进行有针对性的作用或者对抗以及补偿。每个晶片的伸长图产生分布在晶片上的伸长矢量形式的说明，这些伸长矢量利用根据EP 10 015 569.6的相应测量装置来求得。相应的控制数据可以在控制单元中尤其是通过经验求得、存储，以便针对每个晶片能够根据在通过晶片的位置图预先给定的位置处的晶片伸长图进行单独控制。通过这种方式可以在对齐晶片期间自动地进行补偿。
有源控制元件3，4，5，6在这些图中不是合乎比例地被描绘，并且也能够具有不同大小或者形状。
附图标记表
1 容纳部
1a 环状凸缘
1i 内部空间
1o保持面
1w 环周壁
2 开孔
3 加热/冷却元件
4 压电元件
5 销钉
5e 销钉端部
6 压力室
6o 上壁
7 导向开孔

Claims (10)

1.用于容纳并且保持晶片的容纳装置，具有下面的特征：
-保持面（1o），
-用于将晶片保持在保持面（1o）处的保持装置，和
-补偿装置（3，4，5，6），用于对晶片的局部和/或全局变形进行主动的、尤其是局部可控制的、至少部分的补偿。
2.根据权利要求1所述的容纳装置，其中通过补偿装置（3，4，5，6）能够局部地影响保持面（1o）的温度。
3.根据上述权利要求之一所述的容纳装置，其中通过补偿装置（3，4，5，6）能够局部地影响保持面（1o）的伸长，尤其是通过在保持面（1o）的背面（1r）处布置优选单独可操控的压电元件（4）。
4.根据前述权利要求之一所述的容纳装置，其特征在于，通过所述补偿装置（3，4，5，6）、尤其是通过在Z方向上的优选机械作用能够局部地影响保持面（1o）的形状。
5.根据上述权利要求之一所述的容纳装置，其中能够从保持面（1o）的背面（1r）通过补偿装置（3，4，5，6）局部地、尤其是液动和/或气动地向保持面（1o）施加压力。
6.根据上述权利要求之一所述的容纳装置，其中将补偿装置（3，4，5，6）设置为集成、优选嵌入在容纳装置、尤其是保持面（1o）中的多个有源控制元件（3，4，5，6）。
7.根据权利要求6所述的容纳装置，其中能够单独地操控每个控制元件（3，4，5，6）或控制元件（3，4，5，6）组。
8.用于将第一晶片与第二晶片对齐的装置，具有下面的特征：
-用于利用第一晶片的第一伸长图和/或第二晶片的第二伸长图和用于分析第一和/或第二伸长图的分析装置来求得在将第一晶片与第二晶片连接时由于第一晶片相对于第二晶片的伸长和/或变形而出现的局部对齐误差的装置，
－至少一个根据上述权利要求之一的用于容纳至少一个晶片的容纳装置，和
－用于在考虑位置图和/或伸长图以及同时通过补偿装置的补偿的情况下对齐晶片的对齐装置。
9.用于将第一晶片与第二晶片对齐的方法，具有下面的步骤，尤其是下面的流程：
－检测第一晶片的第一伸长图和/或第二晶片的第二伸长图并且通过分析装置分析第一和/或第二伸长图并且求得局部对齐误差，
－将至少一个晶片容纳到根据权利要求1至7之一的容纳装置中，并且
－在考虑位置图和/或伸长图以及同时通过补偿装置的补偿的情况下对齐晶片。
10.根据权利要求9所述的方法，其中在对齐之后设置尤其再次的、对第一和/或第二晶片的位置图和/或伸长图的检测。
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