TW201405723A - 引線框、半導體封裝以及該等裝置之製造方法 - Google Patents
引線框、半導體封裝以及該等裝置之製造方法 Download PDFInfo
- Publication number
- TW201405723A TW201405723A TW102112628A TW102112628A TW201405723A TW 201405723 A TW201405723 A TW 201405723A TW 102112628 A TW102112628 A TW 102112628A TW 102112628 A TW102112628 A TW 102112628A TW 201405723 A TW201405723 A TW 201405723A
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- lead frame
- terminal
- terminal portion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H—ELECTRICITY
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L23/49541—Geometry of the lead-frame
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49121—Beam lead frame or beam lead device
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012097053A JP2013225595A (ja) | 2012-04-20 | 2012-04-20 | リードフレーム及び半導体パッケージ並びにそれらの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201405723A true TW201405723A (zh) | 2014-02-01 |
Family
ID=49379343
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102112628A TW201405723A (zh) | 2012-04-20 | 2013-04-10 | 引線框、半導體封裝以及該等裝置之製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8853841B2 (enExample) |
| JP (1) | JP2013225595A (enExample) |
| KR (1) | KR20130118781A (enExample) |
| CN (1) | CN103378045A (enExample) |
| TW (1) | TW201405723A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781007B (zh) * | 2021-06-28 | 2022-10-11 | 南韓商海成帝愛斯股份有限公司 | 包括其中形成有槽的引線的引線框架 |
| TWI897650B (zh) * | 2024-09-26 | 2025-09-11 | 強茂股份有限公司 | 孔壁形成側面可潤濕結構的封裝元件 |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014188632A1 (ja) * | 2013-05-23 | 2014-11-27 | パナソニック株式会社 | 放熱構造を有する半導体装置および半導体装置の積層体 |
| JP6269417B2 (ja) * | 2014-09-26 | 2018-01-31 | 三菱電機株式会社 | 半導体装置 |
| US20160172275A1 (en) * | 2014-12-10 | 2016-06-16 | Stmicroelectronics S.R.L. | Package for a surface-mount semiconductor device and manufacturing method thereof |
| JP6840466B2 (ja) * | 2016-03-08 | 2021-03-10 | 株式会社アムコー・テクノロジー・ジャパン | 半導体パッケージ及び半導体パッケージの製造方法 |
| JP6603169B2 (ja) * | 2016-04-22 | 2019-11-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| US10153424B2 (en) * | 2016-08-22 | 2018-12-11 | Rohm Co., Ltd. | Semiconductor device and mounting structure of semiconductor device |
| JP6800745B2 (ja) * | 2016-12-28 | 2020-12-16 | 株式会社ディスコ | 半導体パッケージの製造方法 |
| JP6850202B2 (ja) * | 2017-06-02 | 2021-03-31 | 株式会社三井ハイテック | リードフレーム、リードフレームの製造方法および半導体装置の製造方法 |
| JP7037368B2 (ja) * | 2018-01-09 | 2022-03-16 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
| EP3736857A1 (en) * | 2019-05-07 | 2020-11-11 | Nexperia B.V. | Through hole side wettable flank |
| CN112652583A (zh) * | 2019-10-10 | 2021-04-13 | 珠海格力电器股份有限公司 | 一种封装器件及其生产方法 |
| CN111106089B (zh) * | 2019-11-29 | 2021-08-17 | 青岛歌尔微电子研究院有限公司 | 高密度管脚qfn的封装结构与方法 |
| CN111987002A (zh) * | 2020-09-04 | 2020-11-24 | 长电科技(滁州)有限公司 | 一种封装体成型方法 |
| IT202100005759A1 (it) * | 2021-03-11 | 2022-09-11 | St Microelectronics Srl | Procedimento per fabbricare dispositivi a semiconduttore e dispositivo a semiconduttore corrispondente |
| CN217334014U (zh) * | 2021-03-11 | 2022-08-30 | 意法半导体股份有限公司 | 半导体器件 |
| JP7614985B2 (ja) * | 2021-09-08 | 2025-01-16 | Towa株式会社 | 半導体装置の製造方法およびリードフレーム |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002270627A (ja) * | 2001-03-13 | 2002-09-20 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| JP2004019465A (ja) * | 2002-06-12 | 2004-01-22 | Fuji Heavy Ind Ltd | エンジンの圧縮圧力診断装置 |
| WO2004082019A1 (ja) * | 2003-03-11 | 2004-09-23 | The Furukawa Electric Co. Ltd. | プリント配線基板、その製造方法、リードフレームパッケージおよび光モジュール |
| US7195953B2 (en) * | 2003-04-02 | 2007-03-27 | Yamaha Corporation | Method of manufacturing a semiconductor package using a lead frame having through holes or hollows therein |
| JP3915794B2 (ja) * | 2003-04-02 | 2007-05-16 | ヤマハ株式会社 | 半導体パッケージ、その製造方法、および、これに使用するリードフレーム |
| JP2006019465A (ja) * | 2004-07-01 | 2006-01-19 | Mitsui Chemicals Inc | 半導体パッケージおよびその製造方法 |
| US8501539B2 (en) * | 2009-11-12 | 2013-08-06 | Freescale Semiconductor, Inc. | Semiconductor device package |
| JP5546363B2 (ja) * | 2010-06-11 | 2014-07-09 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
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2012
- 2012-04-20 JP JP2012097053A patent/JP2013225595A/ja active Pending
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2013
- 2013-04-03 US US13/855,840 patent/US8853841B2/en active Active
- 2013-04-10 TW TW102112628A patent/TW201405723A/zh unknown
- 2013-04-16 KR KR1020130041515A patent/KR20130118781A/ko not_active Withdrawn
- 2013-04-17 CN CN201310133137XA patent/CN103378045A/zh active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI781007B (zh) * | 2021-06-28 | 2022-10-11 | 南韓商海成帝愛斯股份有限公司 | 包括其中形成有槽的引線的引線框架 |
| TWI897650B (zh) * | 2024-09-26 | 2025-09-11 | 強茂股份有限公司 | 孔壁形成側面可潤濕結構的封裝元件 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8853841B2 (en) | 2014-10-07 |
| KR20130118781A (ko) | 2013-10-30 |
| JP2013225595A (ja) | 2013-10-31 |
| CN103378045A (zh) | 2013-10-30 |
| US20130277817A1 (en) | 2013-10-24 |
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