TW200746432A - Insulation gate type semiconductor device - Google Patents
Insulation gate type semiconductor deviceInfo
- Publication number
- TW200746432A TW200746432A TW096115819A TW96115819A TW200746432A TW 200746432 A TW200746432 A TW 200746432A TW 096115819 A TW096115819 A TW 096115819A TW 96115819 A TW96115819 A TW 96115819A TW 200746432 A TW200746432 A TW 200746432A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- source
- doped region
- type doped
- underneath
- Prior art date
Links
- 238000009413 insulation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005684 electric field Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006131820A JP5048273B2 (ja) | 2006-05-10 | 2006-05-10 | 絶縁ゲート型半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200746432A true TW200746432A (en) | 2007-12-16 |
TWI341031B TWI341031B (zh) | 2011-04-21 |
Family
ID=38684328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096115819A TW200746432A (en) | 2006-05-10 | 2007-05-04 | Insulation gate type semiconductor device |
Country Status (5)
Country | Link |
---|---|
US (1) | US7692240B2 (zh) |
JP (1) | JP5048273B2 (zh) |
KR (1) | KR100856299B1 (zh) |
CN (1) | CN101071825B (zh) |
TW (1) | TW200746432A (zh) |
Cited By (2)
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TWI381528B (zh) * | 2008-10-09 | 2013-01-01 | ||
CN111933685A (zh) * | 2020-06-24 | 2020-11-13 | 株洲中车时代半导体有限公司 | 碳化硅mosfet器件的元胞结构、其制备方法及碳化硅mosfet器件 |
Families Citing this family (30)
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JP4721653B2 (ja) * | 2004-05-12 | 2011-07-13 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置 |
JP2008085188A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 絶縁ゲート型半導体装置 |
JP5511124B2 (ja) * | 2006-09-28 | 2014-06-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP2009164278A (ja) * | 2007-12-28 | 2009-07-23 | Mitsumi Electric Co Ltd | Mosトランジスタ及びこれを用いた半導体集積回路装置 |
JP5337470B2 (ja) * | 2008-04-21 | 2013-11-06 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 絶縁ゲート型半導体装置 |
JP5331497B2 (ja) * | 2008-11-27 | 2013-10-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
JP5535490B2 (ja) * | 2009-01-30 | 2014-07-02 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
WO2011039888A1 (ja) * | 2009-10-01 | 2011-04-07 | トヨタ自動車株式会社 | 半導体装置 |
JP5805756B2 (ja) * | 2010-06-17 | 2015-11-04 | アーベーベー・テヒノロギー・アーゲー | パワー半導体デバイス |
KR101430674B1 (ko) | 2012-12-20 | 2014-08-18 | 주식회사 케이이씨 | 제너 다이오드를 갖는 반도체 디바이스 |
JP5694285B2 (ja) * | 2012-12-28 | 2015-04-01 | トヨタ自動車株式会社 | 半導体装置 |
JP5719976B2 (ja) * | 2013-03-31 | 2015-05-20 | 新電元工業株式会社 | 半導体装置 |
CN105103298B (zh) * | 2013-03-31 | 2019-01-01 | 新电元工业株式会社 | 半导体装置 |
JP6177300B2 (ja) * | 2013-03-31 | 2017-08-09 | 新電元工業株式会社 | 半導体装置 |
WO2015080162A1 (ja) * | 2013-11-28 | 2015-06-04 | ローム株式会社 | 半導体装置 |
EP3007231B1 (en) | 2014-01-16 | 2020-12-09 | Fuji Electric Co., Ltd. | Semiconductor device |
JP2014112739A (ja) * | 2014-03-19 | 2014-06-19 | Toshiba Corp | 半導体装置 |
WO2016047438A1 (ja) * | 2014-09-26 | 2016-03-31 | 三菱電機株式会社 | 半導体装置 |
US9614041B1 (en) * | 2015-09-11 | 2017-04-04 | Nxp Usa, Inc. | Multi-gate semiconductor devices with improved hot-carrier injection immunity |
KR102369553B1 (ko) * | 2015-12-31 | 2022-03-02 | 매그나칩 반도체 유한회사 | 저전압 트렌치 반도체 소자 |
WO2018052098A1 (ja) * | 2016-09-14 | 2018-03-22 | 富士電機株式会社 | 半導体装置およびその製造方法 |
JP6677613B2 (ja) | 2016-09-15 | 2020-04-08 | 株式会社東芝 | 半導体装置 |
JP6719090B2 (ja) * | 2016-12-19 | 2020-07-08 | パナソニックIpマネジメント株式会社 | 半導体素子 |
CN109873029A (zh) * | 2017-12-04 | 2019-06-11 | 贵州恒芯微电子科技有限公司 | 一种沟槽栅超势垒整流器 |
JP7371335B2 (ja) * | 2019-03-13 | 2023-10-31 | 富士電機株式会社 | 半導体装置 |
US11728422B2 (en) * | 2019-11-14 | 2023-08-15 | Stmicroelectronics S.R.L. | Power MOSFET device having improved safe-operating area and on resistance, manufacturing process thereof and operating method thereof |
IT202000015076A1 (it) | 2020-06-23 | 2021-12-23 | St Microelectronics Srl | Dispositivo elettronico in 4h-sic con prestazioni di corto circuito migliorate, e relativo metodo di fabbricazione |
EP4131419A1 (en) * | 2021-08-03 | 2023-02-08 | Infineon Technologies Austria AG | Transistor device |
WO2024101131A1 (ja) * | 2022-11-08 | 2024-05-16 | ローム株式会社 | SiC半導体装置 |
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JPH02199870A (ja) * | 1989-01-27 | 1990-08-08 | Nec Corp | 絶縁ゲート電界効果トランジスタ |
JPH0435069A (ja) * | 1990-05-31 | 1992-02-05 | Matsushita Electric Works Ltd | 電界効果半導体装置 |
JPH04239137A (ja) * | 1991-01-11 | 1992-08-27 | Nec Corp | 縦型電界効果トランジスタ |
JP3307785B2 (ja) * | 1994-12-13 | 2002-07-24 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JPH08274321A (ja) * | 1995-03-31 | 1996-10-18 | Rohm Co Ltd | 半導体装置 |
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JPH09205198A (ja) * | 1996-01-24 | 1997-08-05 | Toyota Motor Corp | 電界効果型半導体装置及び半導体装置の製造方法 |
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JP2004055812A (ja) * | 2002-07-19 | 2004-02-19 | Renesas Technology Corp | 半導体装置 |
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JP4451594B2 (ja) * | 2002-12-19 | 2010-04-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びその製造方法 |
JP3884397B2 (ja) * | 2003-04-25 | 2007-02-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP4764998B2 (ja) * | 2003-11-14 | 2011-09-07 | 富士電機株式会社 | 半導体装置 |
US6995428B2 (en) * | 2004-02-24 | 2006-02-07 | System General Corp. | High voltage LDMOS transistor having an isolated structure |
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2006
- 2006-05-10 JP JP2006131820A patent/JP5048273B2/ja active Active
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2007
- 2007-05-04 TW TW096115819A patent/TW200746432A/zh not_active IP Right Cessation
- 2007-05-08 US US11/797,900 patent/US7692240B2/en active Active
- 2007-05-09 CN CN200710102817XA patent/CN101071825B/zh not_active Expired - Fee Related
- 2007-05-10 KR KR1020070045384A patent/KR100856299B1/ko not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI381528B (zh) * | 2008-10-09 | 2013-01-01 | ||
CN111933685A (zh) * | 2020-06-24 | 2020-11-13 | 株洲中车时代半导体有限公司 | 碳化硅mosfet器件的元胞结构、其制备方法及碳化硅mosfet器件 |
CN111933685B (zh) * | 2020-06-24 | 2022-09-09 | 株洲中车时代半导体有限公司 | 碳化硅mosfet器件的元胞结构、其制备方法及碳化硅mosfet器件 |
Also Published As
Publication number | Publication date |
---|---|
US7692240B2 (en) | 2010-04-06 |
JP2007305751A (ja) | 2007-11-22 |
KR20070109907A (ko) | 2007-11-15 |
JP5048273B2 (ja) | 2012-10-17 |
US20070262390A1 (en) | 2007-11-15 |
CN101071825B (zh) | 2011-07-27 |
KR100856299B1 (ko) | 2008-09-03 |
CN101071825A (zh) | 2007-11-14 |
TWI341031B (zh) | 2011-04-21 |
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