CN102867853B - 金属氧化物半场效晶体管 - Google Patents

金属氧化物半场效晶体管 Download PDF

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CN102867853B
CN102867853B CN201110241606.0A CN201110241606A CN102867853B CN 102867853 B CN102867853 B CN 102867853B CN 201110241606 A CN201110241606 A CN 201110241606A CN 102867853 B CN102867853 B CN 102867853B
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metal oxide
oxide semiconductor
semiconductor field
doped region
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CN102867853A (zh
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陈柏安
潘钦寒
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Nuvoton Technology Corp
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Abstract

本发明实施例公开了一种金属氧化物半场效晶体管，包括源极区、漏极区、栅极以及栅介电层。漏极区位于基底中，呈椭圆形螺旋状，且其起始部分别呈条状或水滴状，或其起始部的曲率为0.02um-1至0.0025um-1。源极区，位于基底中，环绕于漏极区周缘。栅极位于源极区与漏极区之间的基底上。栅介电层位于栅极与基底之间。

Description

金属氧化物半场效晶体管
技术领域
本发明涉及半导体元件，且特别是有关于数种金属氧化物半场效晶体管。
背景技术
超高压元件在操作时必须具有高击穿电压(breakdown voltage)以及低的开启电阻(on-state resistance，Ron)，以减少功率损耗失。为能提供较高电流并维持足够大的击穿电压，目前已发展出阵列式的结构。在交流-直流电产品的布局中，通过阵列结构可以减少布局面积并且提升元件的效能。目前所发展的一种超高压元件，其源极区以及漏极区均呈指叉状。虽然指叉状的源极端以及漏极端能够减少布局的面积，但是，其曲率非常大，特别是在源极端会有非常大的电流聚集，成为击穿点，导致元件的击穿电压下降。
发明内容
本发明实施例提供数种金属氧化物半场效晶体管，其可以减少布局的面积，且可避免源极与漏极端电流聚集，提升元件的击穿电压，降低元件的开启电阻。
依照本发明一实施例，提出一种金属氧化物半场效晶体管，包括源极区、漏极区、栅极以及栅介电层。漏极区位于基底中，呈椭圆形螺旋状，且其起始部分别呈条状或水滴状，或其起始部的曲率为0.02um-1至0.0025um-1。源极区，位于基底中，环绕于漏极区周缘。栅极位于源极区与漏极区之间的基底上。栅介电层位于栅极与基底之间。
本发明实施例的金属氧化物半场效晶体管的源极区具有足够小的曲率，避免源极端电流聚集。或者，源极区的尖端曲率过大时，可以通过第二导电型第二井区的形成来避免源极端电流聚集。因此，本发明实施例的金属氧化物半场效晶体管不仅可以应用做为高压元件，减少布局的面积，且能够提升元件的击穿电压，降低元件的开启电阻。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本申请的一部分，并不构成对本发明的限定。在附图中：
图1为依照本发明一实施例所绘示的一种漏极起始部为条状的椭圆形螺旋状的金属氧化物半场效晶体管的上视图。
图1A绘示图1金属氧化物半场效晶体管的基底中多个掺杂区域的相对位置的示意图。
图2A为绘示图1、3-7中A-A切线的剖面示意图。
图2B为绘示图1、6以及7中B-B切线的剖面示意图。
图2C为绘示图1、3-7的另一实施例的A-A切线的剖面示意图。
图3为依照本发明另一实施例所绘示的漏极起始部呈水滴状的单一圈椭圆形螺旋状的金属氧化物半场效晶体管的上视图。
图3A绘示图3的金属氧化物半场效晶体管的基底中多个掺杂区域的相对位置的示意图。
图4为依照本发明又一实施例所绘示的漏极起始部呈水滴状的多圈椭圆形螺旋状的金属氧化物半场效晶体管的第一导电型第一井区、漏极区以及源极区的上视图。
图5为依照本发明再一实施例所绘示的U型金属氧化物半场效晶体管的透视图。
图6为依照本发明又一实施例所绘示的W型金属氧化物半场效晶体管的透视图。
图7为依照本发明另一实施例所绘示的金属氧化物半场效晶体管的透视图。
图8为绘示具有大致相同面积的多个金属氧化物半场效晶体管的电性测试图。
附图标号：
具体实施方式
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附图式作详细说明如下。
图1为依照本发明一实施例所绘示的一种漏极起始部呈条状的椭圆形螺旋状的金属氧化物半场效晶体管的上视图。图1A绘示图1中的栅极16、栅介电层18以及隔离结构24移除后所呈现的基底中多个掺杂区域的相对位置的示意图。图2A为绘示图1中A-A切线的剖面示意图。图2B为绘示图1中B-B切线的剖面示意图。
请参照图1、1A、2A与2B，本发明一实施例的漏极起始部呈条状的椭圆形螺旋状的金属氧化物半场效晶体管100包括栅极16、栅介电层18、漏极区20以及源极区22。漏极区20呈椭圆形螺旋状(或称为回纹针状)，其起始部20a为条状；而源极区22则环绕在漏极区20周围。在另一实施例中，金属氧化物半场效晶体管100还包括第一导电型第一井区(NW1)12、第二导电型第一井区(PW1)14。为清楚显示各个构件相对应的位置，在图1、1A、2A与2B中将栅极16、栅介电层18、漏极区20、源极区22、第一导电型第一井区(NW1)12以及第二导电型第一井区(PW1)14均绘示出来。第一导电型可以是P型或N型。第二导电型可以是N型或P型。在本实施例中，是以第一导电型为N型；第二导电型为P型为例来说明之，但，本发明并不此为限。
请参照图1、2A与2B，漏极区20位于基底10中。基底10例如是半导体基底10，例如是硅基底。基底10中可以是具有P型掺杂或N型掺杂。P型掺杂可以是IIIA族离子，例如是硼离子。N型掺杂可以是VA族离子例如是砷或是磷。在本发明另一实施例中(图2C)，基底10亦可以包括半导体基底10a以及位于其上方的外延层10b，在此实施例中，半导体基底10a为P型基底，外延层10b为P型外延层(p-epi)。漏极区20具有第一导电型掺杂，其呈螺旋状，亦可以称为回纹针状，位于例如第一导电型第一井区(NW1)12中。漏极区20的起始部20a呈条状，更具体地说，在一实施例中，漏极区20的起始部20a是由弧部20b以及矩形部20c所构成。在另一实施例中，弧部20b除了可为一半圆外，亦可为其他的弧形，例如是四分之一圆、八分之一圆等不同构造，在此不加赘述。前述的半圆、四分之一圆、八分之一圆等弧形的曲率例如可为0.2um-1至0.02um-1。在另一实施例中，起始部20a亦可以为一矩形。在一实施例中，漏极区20的掺杂浓度例如是5x1014～8x1015/cm2。
请参照图1、1A、2A与2B，第一导电型第一井区(NW1)12，其位于漏极区20与基底10之间。在一实施例中，第一导电型第一井区(NW1)12可与漏极区20具有大致相同的形状，例如是呈椭圆形螺旋状，起始部12a呈条状。更具体地说，第一导电型第一井区(NW1)12的起始部12a由弧部12b以及矩形部12c所构成。然而，第一导电型第一井区(NW1)12的形状并不以此为限，其也可以与漏极区20具有不同的形状，只要可使漏极区20位于此第一导电型第一井区(NW1)12即可，其可能的形状在此不赘述。第一导电型第一井区(NW1)12的掺杂浓度低于漏极区20的掺杂浓度。在一实施例中，第一导电型第一井区(NW1)12的掺杂浓度例如是5x1011～2x1013/cm2。
请参照图1、1A与2A，第二导电型第一井区(PW1)14位于第一导电型第一井区12中，环绕于漏极区20周围。第二导电型第一井区14的掺杂浓度高于第一导电型第一井区12的掺杂浓度。在一实施例中，第二导电型第一井区14的掺杂浓度是第一导电型第一井区12的掺杂浓度的1.0至4倍。在一实施例中，第二导电型第一井区(PW1)14的掺杂浓度例如是1x1012～4x1013/cm2。
请参照图1、1A、2A与2B，隔离结构24位于基底10上，其紧邻漏极区20周围并且覆盖第二导电型第一井区14。隔离结构24例如是局部热氧化隔离结构，其材质为绝缘材料，例如是氧化硅。
请参照图1、1A与图2A，源极区22具有第一导电型掺杂位于基底10中，环绕于漏极区20的周缘。更具体来说，源极区22可完全包围漏极区20。通过源极区22包围漏极区20的方式，当此金属氧化物半场效晶体管做为一高压元件时，施于漏极区20的高电压(e.g.数十～数百伏)，可有效地被源极区22隔绝，进而降低此高电压对周边元件的影响。前述源极区22完全包围漏极区20的的方式仅为本发明的一实施例，本发明并不以此为限。在一实施例中，源极区22的掺杂浓度例如是5x1014～8x1015/cm2。由另一角度观之，源极区22位于第一导电型第一井区12周缘。
此外，在一实施例中，上述金属氧化物半场效晶体管100的源极区22有一部分与栅极16耦合(未绘示)。然而，在另一实施中，请参照图2A与图2B，上述金属氧化物半场效晶体管100的源极区22未与栅极16耦合，而相隔一距离，例如是栅极16侧壁具有间隙壁40的工艺。源极区22与栅极16之间，例如是在间隙壁40下方的基底10之中，更包括第一导电型淡掺杂区(NLDD)26，其与源极区22电性连接，且与栅极16耦合。第一导电型淡掺杂区(NLDD)26的掺杂浓度低于或等于源极区22的掺杂浓度。在一实施例中，第一导电型淡掺杂区(NLDD)26的掺杂浓度例如是5x1012～1x1014/cm2。
请参照图1、1A、2A与图2B，在一实施例中，当呈椭圆形螺旋状的第一导电型第一井区12的第一转弯处12d的源极区22的曲率非常大时，例如是其曲率为0.5um-1至0.05um-1时，金属氧化物半场效晶体管100更包括第二导电型第二井区(PW2)28，其位于第二导电型第一井区14中，具体的位置位于呈椭圆形螺旋状的第一导电型第一井区12的第一转弯处12d的源极区22周围。第二导电型第二井区(PW2)28可以降低第一导电型第一井区12的第一转弯处12d(源极区22的尖端)的电场效应，提升元件的击穿电压。在一实施例中，第二导电型第二井区(PW2)28的形状例如是马蹄状。然而，本发明第二导电型第二井区(PW2)28的形状并不以此为限，只要能降低第一导电型第一井区12的第一转弯处12d(源极区22的尖端)的电场效应提升元件的击穿电压者。第二导电型第一井区14以及第二导电型第二井区28的掺杂浓度和大于第一导电型第一井区12的掺杂浓度。在一实施例中，第二导电型第一井区14以及第二导电型第二井区28的掺杂浓度和是第一导电型第一井区12的掺杂浓度的1.2至5.0倍。第二导电型第二井区(PW2)28的掺杂浓度例如是5x1011～2x1013/cm2。
请参照图1、1A、2A与图2B，在一实施例中，上述金属氧化物半场效晶体管100更包括第一导电型第二井区(NW2)30以及第二导电型第三井区(PW3)32。第一导电型第二井区(NW2)30，可作为金属氧化物半场效晶体管100的电荷聚积层(charge accumulation layer)，其位于第一导电型第一井区12周围的基底10中。第二导电型第三井区(PW3)32位于第一导电型第二井区30中，且源极区22位于第二导电型第三井区(PW3)32中。从另一个观点而言，基底10与源极区22之间以第一导电型第二井区(NW2)30以及第二导电型第三井区(PW3)32相隔。第二导电型第三井区(PW3)32位于源极区22与第一导电型第二井区(NW2)30之间。栅极16下方的第二导电型第三井区(PW3)32的表面为通道区。从图1A来看，第一导电型第二井区(NW2)30位于第一导电型第一井区(NW1)12的外围。第二导电型第三井区(PW3)32也同样是位于第一导电型第一井区(NW1)12的外围，且位于第一导电型第二井区30中。第一导电型第二井区(NW2)30的掺杂浓度例如是1x1012～5x1013/cm2。第二导电型第三井区(PW3)32的掺杂浓度例如是1x1012～5x1013/cm2。
请参照图1、1A、图2A与图2B，在一实施例中，上述金属氧化物半场效晶体管100可做为高压元件，其更包括第一导电型浓掺杂区(NHDD)34以及36，以降低串联电阻，提升击穿电压。第一导电型浓掺杂区(NHDD)34以及36分别位于第二导电型第三井区(PW3)32中以及第一导电型第一井区12中，且分别使得源极区22以及漏极区20位于这两个第一导电型浓掺杂区34、36之中。从另一个观点而言，第一导电型浓掺杂区(NHDD)34位于源极区22与第二导电型第三井区(PW3)32之间；第一导电型浓掺杂区(NHDD)36位于漏极区22与第一导电型第一井区12之间，然而第一导电型浓掺杂区(NHDD)34、36的形状并不一定需要与源极区22或漏极区20完全相同。此外，请参照图2A与图2B，上述金属氧化物半场效晶体管10的第二导电型第三井区(PW3)32中还包括第二导电型掺杂区42，可用以做为基底10的接点。
请参照图1、1A、图2A与图2B，栅极16位于源极区22与漏极区20之间的基底10之上。更具体地说，在一实施例中，栅极16从源极区22起，延伸覆盖第一导电型第一井区12以及部分的第二导电型第一井区14。在另一实施例中，栅极16从源极区22起，覆盖第一导电型浓掺杂区34、第二导电型第三井区32、第一导电型第一井区12、第二导电型第二井区28以及第二导电型第一井区14。在一实施例中，栅极16与第二导电型第一井区14之间以隔离结构(或称为飘移隔离结构)24相隔。栅极16为一导电材质例如金属、多晶硅、掺杂多晶硅、多晶硅化金属或其组合而成的堆叠层。
请参照图2A与图2B，栅介电层18位于栅极16与该基底10之间。栅介电层18可以是由单材料层所构成。单材料层例如是低介电常数材料或是高介电常数材料。低介电常数材料是指介电常数低于4的介电材料，例如是氧化硅或氮氧化硅。高介电常数材料是指介电常数高于4的介电材料，例如是HfAlO、HfO2、Al2O3或Si3N4。栅介电层18的厚度例如是50nm至1500nm。
请参照图1、图1A，上述金属氧化物半场效晶体管100更包括接触窗38，其与椭圆形螺旋状的漏极区20的第一个转弯处20d电性连接。
以上图1实施例的金属氧化物半场效晶体管100，以漏极20的起始部20a呈条状来说明，然而，本发明的金属氧化物半场效晶体管的第一导电型第一井区(NW1)12还可以具有各种变化，如图3至图8所示。
图3为依照本发明另一实施例所绘示的漏极起始部呈水滴状的单一圈椭圆形螺旋状的金属氧化物半场效晶体管的上视图。图3A绘示图3中基底中多个掺杂区域的相对位置的示意图。图3中A-A切线的剖面与图1A相同，不再另外绘制。图4为依照本发明又一实施例所绘示的漏极起始部呈水滴状的多圈椭圆形螺旋状的金属氧化物半场效晶体管的第一导电型第一井区、漏极区以及源极区的上视图。
请参照图3、3A、4、图1与图1A，此实施例的金属氧化物半场效晶体管200的结构，与图1、1A的上述金半场效晶体管100的结构非常相似，漏极区20也同样是呈椭圆螺旋状。但是，在本实施例中，请参照图3、3A，漏极区20的起始部20a呈水滴状。第一导电型第一井区12的第一圈所围绕的基底10a的形状也是呈水滴状。更具体地说，第一导电型第一井区12可与漏极区20具有大致相同的形状，然并不以此为限。例如第一导电型第一井区12的起始部12a以及终端部12e分别呈弧形，例如是半圆形、四分之一圆形、八分之一圆形等且第一导电型第一井区12的起始部12a的弧形半径可大于第一导电型第一井区12的终端部12e的弧形半径，使得第一导电型第一井区12的第一圈所围绕的基底10的形状呈水滴状。然而，第一导电型第一井区(NW1)12的形状并不以此为限，其也可以与漏极区20具有不同的形状，只要可使漏极区20位于此第一导电型第一井区(NW1)12即可，其可能的形状在此不赘述。此外，请参照图3、3A，在一实施例中，在金属氧化物半场效晶体管200具有第二导电型第三井区(PW3)32，在金属氧化物半场效晶体管200中心处的第二导电型第三井区(PW3)32所围绕的基底10b呈圆形。另外，值得一提的是，请参照图3A，由于漏极区20的起始部20a呈弧形，且其曲率例如是0.02um-1至0.0025um-1，因此环绕在其周围的源极区22并无电场过大的问题，并不需要额外形成第二导电型第二井区28来降低尖端电场所造成的效应。此外，接触窗38与椭圆形螺旋状的漏极区20的起始部处20a电性连接。
在一实施例中，上述金属氧化物半场效晶体管200的漏极区20为单一圈椭圆螺旋状(如图3、3A所示)。在另一实施例中，漏极区20的起始部20a仍呈水滴状。但，漏极区20为多圈椭圆螺旋状(如图4所示)。
图5为依照本发明又一实施例所绘示的U型金属氧化物半场效晶体管的透视图。亦即图5省略了隔离结构，而将隔离结构下方的各掺杂区绘示出来。图5中A-A切线的剖面与图2A相同。图5中B-B切线的剖面与图2B相同。
请参照图5与图1、1A，此实施例的金属氧化物半场效晶体管300呈U型结构，与图、1A的金属氧化物半场效晶体管100的结构非常相似，但是，图、1A的金半场效晶体管100的漏极区20以及第一导电型第一井区(NW1)12均呈椭圆形螺旋状，而在本实施例图5中，漏极区20以及第一导电型第一井区(NW1)12仅撷取图1第一圈的一部分。亦即，请参照图5，漏极区20以及第一导电型第一井区(NW1)12均呈U型。第一导电型第一井区12的凹口底部12g的曲率例如是0.02um-1至0.0025um-1；环绕在第一导电型第一井区12的凹口底部12g的周围的源极区22的曲率例如是0.0065um-1至0.001um-1。由于第一导电型第一井区12的凹口底部12g有足够小的曲率，环绕在其周围的源极区22并无电场过大的问题，因此，并不需要在第二导电型第一井区14中额外形成第二导电型第二井区28来降低尖端电场所造成的效应。此外，接触窗38与U型的漏极区20的底部电性连接。
图6为依照本发明又一实施例所绘示的W型金属氧化物半场效晶体管的透视图。亦即图6省略了隔离结构，而将隔离结构下方的各掺杂区绘示出来。图6中A-A切线的剖面与图2A相同。图6中B-B切线的剖面与图2B相同。
请参照图6、图1、图1A，此实施例的金属氧化物半场效晶体管400的结构，可视为图1、1A的金属氧化物半场效晶体管的结构的变形。更具体地说，在本实施例中，漏极区20以及第一导电型第一井区(NW1)12撷取图1第一圈呈U型的部分，并且分别将两个U型重叠成类似W型(或是称为转向的E字型，第一导电型第一井区(NW1)12为大W(大的转向E)，漏极区20为小W(小的转向E)。漏极区20位于源极区22所围的区域之中亦即，源极区22环绕于漏极区20周围，且其延伸至第一导电型第一井区(NW1)12的两个凹口12f的部分分别呈U型，U型的中心非常窄，因此，其U型非常接近条状，亦即，在U的底部为尖端处，会有电场过高的问题，因此，需要在两个凹口底部12g的第二导电型第一井区14中，额外形成第二导电型第二井区28，使得所形成的第二导电型第二井区28位于凹口12f的U型源极区22的底部周围，来降低尖端电场所造成的效应。两个第二导电型第二井区28的形状例如是马蹄状。此外，接触窗38与W型的漏极区20的底部区域电性连接。
图7为依照本发明另一实施例所绘示的金属氧化物半场效晶体管的透视图。亦即图7省略了隔离结构，而将隔离结构下方的各掺杂区绘示出来。图7中A-A切线的剖面与图2A相同。图7中B-B切线的剖面与图2B相同。
请参照图7、图1与图1A，此实施例的金属氧化物半场效晶体管500的结构，可视为图6的金属氧化物半场效晶体管的结构的变形体。更具体地说，在本实施例中，漏极区20以及第一导电型第一井区(NW1)12是撷取图6呈U型的部分。源极区22环绕于漏极区20周围，其延伸至第一导电型第一井区(NW1)12的凹口12f分别呈U型，U型的中心非常窄，因此，其U型非常接近条状，亦即，在U的底部为尖端处，会有电场过高的问题，因此，需要在两个凹口12f中的U型源极区22的底部周围的第二导电型第一井区14中，额外形成第二导电型第二井区28来降低尖端电场所造成的效应。第二导电型第二井区28的形状例如是马蹄状。此外，接触窗38与漏极区20的底部区域电性连接。
在以上的实施例中，为使本发明实施例更清楚易于了解，基底中的多个掺杂区是以井区来说明，然而，在实际上，上述实施例并不以井区为限，也可以是掺杂区。
图8为绘示大致相同面积(面积为700um x 500um)的上述金属氧化物半场效晶体管100、200、300、400以及500的电性测试图。图8中点100’、200’、300’、400’以及500’分别表示金属氧化物半场效晶体管100、200、300、400以及500的测试结果。由图8的结果显示，在相同的击穿电压下，晶体管500至晶体管100的开启电阻Rdson逐渐下降，其下降的幅度达26.8％。
综合以上所述，本发明实施例的金属氧化物半场效晶体管的源极区具有足够小的曲率，避免源极端电流聚集。或者，源极区的尖端曲率过大时，可以通过第二导电型第二井区的形成来避免源极端电流聚集。因此，本发明实施例的金属氧化物半场效晶体管不仅可以应用做为高压元件，减少布局的面积，且能够提升元件的击穿电压，降低元件的开启电阻。
虽然本发明已以实施例揭露如上，然其并非用以限定本发明，任何本领域技术人员，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视权利要求范围所界定者为准。

Claims (18)

1.一种金属氧化物半场效晶体管，其特征在于，包括：
一漏极区，位于一基底中，所述漏极区具有第一导电型，呈椭圆形螺旋状，其起始部的弧形轮廓的曲率为0.02 um-1至0.0025 um-1；
一源极区，具有第一导电型，位于所述基底中，环绕于所述漏极区周缘；
一栅极，位于所述源极区与所述漏极区之间的所述基底上；以及
一栅介电层位于所述栅极与所述基底之间。
2.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述起始部的轮廓没有尖锐角。
3.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述漏极区的起始部呈水滴状，所述水滴状的最大宽度大于所述漏极区除了所述起始部之外的条状区的宽度。
4.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述漏极区的起始部呈水滴状，所述水滴状的任一部分的轮廓的曲率为0.02 um-1至0.0025 um-1。
5.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述漏极区为单一圈椭圆螺旋状。
6.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述漏极区为多圈椭圆螺旋状。
7.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，更包括：
一第一导电型第一掺杂区，位于所述漏极区与所述基底之间；以及
一第二导电型第一掺杂区，位于所述第一导电型第一掺杂区中，环绕于所述漏极区周围。
8.如权利要求7所述的金属氧化物半场效晶体管，其特征在于，所述第二导电型第一掺杂区的掺杂浓度大于所述第一导电型第一掺杂区的掺杂浓度。
9.如权利要求7所述的金属氧化物半场效晶体管，其特征在于，所述第一导电型第一掺杂区的第一个转弯所围的所述基底呈半圆形。
10.如权利要求7所述的金属氧化物半场效晶体管，其特征在于，更包括一第二导电型第二掺杂区，位于所述第一导电型第一掺杂区的一第一转弯处的所述源极区周围的所述第二导电型第一掺杂区中，其中所述第二导电型第一掺杂区以及所述第二导电型第二掺杂区的掺杂浓度和大于所述第一导电型第一掺杂区的掺杂浓度。
11.如权利要求7所述的金属氧化物半场效晶体管，其特征在于，更包括一第一导电型第二掺杂区与一第二导电型第三掺杂区，其中：
所述第一导电型第二掺杂区，位于所述第一导电型第一掺杂区周围的所述基底中；以及
所述第二导电型第三掺杂区，位于所述第一导电型第二掺杂区中，且所述源极区位于所述第二导电型第三掺杂区中。
12.如权利要求11所述的金属氧化物半场效晶体管，其特征在于，在所述金属氧化物半场效晶体管的中心处的所述第二导电型第三掺杂区所围绕的所述基底呈圆形。
13.如权利要求11所述的金属氧化物半场效晶体管，其特征在于，更包括二第一导电型浓掺杂区，分别位于所述第二导电型第三掺杂区中以及所述第一导电型第一掺杂区中，且分别使所述源极区以及所述漏极区位于所述第一导电型浓掺杂区中。
14.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，更包括一第一导电型淡掺杂区，位于所述源极区与所述栅极之间的所述基底中，与所述源极区电性连接。
15.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，更包括一接触窗，与所述漏极区的一第一个转弯处电性连接。
16.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，更包括一接触窗与所述漏极区起始部处电性连接。
17.如权利要求7所述的金属氧化物半场效晶体管，其特征在于，当所述第一导电型为N型时，所述第二导电型为P型；当所述第一导电型为P型时，所述第二导电型为N型。
18.如权利要求1所述的金属氧化物半场效晶体管，其特征在于，所述源极区环绕在所述漏极区周围。
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