TW200715570A - Robust transistors with fluorine treatment - Google Patents

Robust transistors with fluorine treatment

Info

Publication number
TW200715570A
TW200715570A TW095124990A TW95124990A TW200715570A TW 200715570 A TW200715570 A TW 200715570A TW 095124990 A TW095124990 A TW 095124990A TW 95124990 A TW95124990 A TW 95124990A TW 200715570 A TW200715570 A TW 200715570A
Authority
TW
Taiwan
Prior art keywords
epitaxial layers
semiconductor device
operating
fluorine treatment
substrate
Prior art date
Application number
TW095124990A
Other languages
English (en)
Inventor
Yi-Feng Wu
Primit Parikh
Marcia Moore
Tim Wisleder
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200715570A publication Critical patent/TW200715570A/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66446Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003Nitride compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
TW095124990A 2005-09-07 2006-07-07 Robust transistors with fluorine treatment TW200715570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71505705P 2005-09-07 2005-09-07

Publications (1)

Publication Number Publication Date
TW200715570A true TW200715570A (en) 2007-04-16

Family

ID=39136403

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095124990A TW200715570A (en) 2005-09-07 2006-07-07 Robust transistors with fluorine treatment

Country Status (5)

Country Link
US (3) US7638818B2 (zh)
EP (3) EP2312635B1 (zh)
JP (1) JP5501618B2 (zh)
TW (1) TW200715570A (zh)
WO (1) WO2008027027A2 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618244B (zh) * 2017-06-06 2018-03-11 Huang Zhi Shu N-face III族/氮化物磊晶結構及其主動元件與其積體化之極性反轉製作方法

Families Citing this family (169)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005527102A (ja) 2001-07-24 2005-09-08 クリー インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
CN101976686A (zh) * 2005-06-10 2011-02-16 日本电气株式会社 场效应晶体管
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
WO2008027027A2 (en) 2005-09-07 2008-03-06 Cree, Inc Transistor with fluorine treatment
WO2007059220A2 (en) * 2005-11-15 2007-05-24 The Regents Of The University Of California Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
JP4989085B2 (ja) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP5307973B2 (ja) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP5065616B2 (ja) * 2006-04-21 2012-11-07 株式会社東芝 窒化物半導体素子
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
JP5512287B2 (ja) * 2007-02-22 2014-06-04 フォルシュングスフェアブント ベルリン エー ファウ 半導体素子およびその製造方法
US9147644B2 (en) * 2008-02-26 2015-09-29 International Rectifier Corporation Semiconductor device and passive component integration in a semiconductor package
US20080203433A1 (en) * 2007-02-27 2008-08-28 Sanken Electric Co., Ltd. High electron mobility transistor and method of forming the same
US8786072B2 (en) 2007-02-27 2014-07-22 International Rectifier Corporation Semiconductor package
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
JP4691060B2 (ja) * 2007-03-23 2011-06-01 古河電気工業株式会社 GaN系半導体素子
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
JP2008277604A (ja) * 2007-05-01 2008-11-13 Oki Electric Ind Co Ltd 電界効果トランジスタ
EP2165366B8 (en) * 2007-07-04 2018-12-26 Beijing Xiaomi Mobile Software Co., Ltd. A method for forming a patterned layer on a substrate
CN101689564B (zh) * 2007-07-09 2012-01-18 飞思卡尔半导体公司 异质结构场效应晶体管及其制造方法和集成电路
TWI460857B (zh) * 2007-08-03 2014-11-11 Univ Hong Kong Science & Techn 可靠之常關型iii族-氮化物主動裝置結構,以及相關方法與系統
US7745849B2 (en) * 2007-09-20 2010-06-29 International Rectifier Corporation Enhancement mode III-nitride semiconductor device with reduced electric field between the gate and the drain
FR2924271B1 (fr) * 2007-11-27 2010-09-03 Picogiga Internat Dispositif electronique a champ electrique controle
JP5416399B2 (ja) * 2008-02-13 2014-02-12 株式会社東芝 半導体装置
JP5671100B2 (ja) * 2008-02-13 2015-02-18 株式会社東芝 半導体装置
US8497527B2 (en) * 2008-03-12 2013-07-30 Sensor Electronic Technology, Inc. Device having active region with lower electron concentration
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US20090301388A1 (en) * 2008-06-05 2009-12-10 Soraa Inc. Capsule for high pressure processing and method of use for supercritical fluids
US8097081B2 (en) 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) * 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US7985986B2 (en) * 2008-07-31 2011-07-26 Cree, Inc. Normally-off semiconductor devices
US8430958B2 (en) * 2008-08-07 2013-04-30 Soraa, Inc. Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US7976630B2 (en) 2008-09-11 2011-07-12 Soraa, Inc. Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US20100295088A1 (en) * 2008-10-02 2010-11-25 Soraa, Inc. Textured-surface light emitting diode and method of manufacture
US8354679B1 (en) 2008-10-02 2013-01-15 Soraa, Inc. Microcavity light emitting diode method of manufacture
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
US8455894B1 (en) 2008-10-17 2013-06-04 Soraa, Inc. Photonic-crystal light emitting diode and method of manufacture
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8987156B2 (en) 2008-12-12 2015-03-24 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US9543392B1 (en) 2008-12-12 2017-01-10 Soraa, Inc. Transparent group III metal nitride and method of manufacture
USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
US8878230B2 (en) * 2010-03-11 2014-11-04 Soraa, Inc. Semi-insulating group III metal nitride and method of manufacture
US8461071B2 (en) * 2008-12-12 2013-06-11 Soraa, Inc. Polycrystalline group III metal nitride with getter and method of making
US20110100291A1 (en) * 2009-01-29 2011-05-05 Soraa, Inc. Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules
JP2010186943A (ja) * 2009-02-13 2010-08-26 Sharp Corp 窒化物半導体装置
US8247886B1 (en) 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8008977B2 (en) * 2009-04-14 2011-08-30 Triquint Semiconductor, Inc. Field-plated transistor including feedback resistor
US8754496B2 (en) * 2009-04-14 2014-06-17 Triquint Semiconductor, Inc. Field effect transistor having a plurality of field plates
JP5472293B2 (ja) 2009-04-20 2014-04-16 富士通株式会社 化合物半導体装置及びその製造方法
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
US8728884B1 (en) 2009-07-28 2014-05-20 Hrl Laboratories, Llc Enhancement mode normally-off gallium nitride heterostructure field effect transistor
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
KR20110032845A (ko) * 2009-09-24 2011-03-30 삼성전자주식회사 전력 전자소자 및 그 제조방법
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
JP5037594B2 (ja) * 2009-12-08 2012-09-26 シャープ株式会社 電界効果トランジスタ
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US20120007102A1 (en) * 2010-07-08 2012-01-12 Soraa, Inc. High Voltage Device and Method for Optical Devices
JP5655424B2 (ja) * 2010-08-09 2015-01-21 サンケン電気株式会社 化合物半導体装置
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
TWI421947B (zh) * 2010-11-12 2014-01-01 Univ Nat Chiao Tung 氮化鎵電晶體的製作方法
JP5707903B2 (ja) * 2010-12-02 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
JP5786323B2 (ja) * 2010-12-03 2015-09-30 富士通株式会社 化合物半導体装置の製造方法
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
JP5857415B2 (ja) * 2011-02-24 2016-02-10 富士通株式会社 半導体装置の製造方法
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US9631620B2 (en) * 2011-03-11 2017-04-25 Johnson Controls Technology Company Stationary volume ratio adjustment mechanism
CN102184943A (zh) * 2011-04-18 2011-09-14 电子科技大学 一种增强型AlGaN/GaN HEMT器件及其制备方法
US8492185B1 (en) 2011-07-14 2013-07-23 Soraa, Inc. Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
JP5782947B2 (ja) * 2011-09-15 2015-09-24 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
JP5765171B2 (ja) * 2011-09-29 2015-08-19 富士通株式会社 化合物半導体装置の製造方法
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9694158B2 (en) 2011-10-21 2017-07-04 Ahmad Mohamad Slim Torque for incrementally advancing a catheter during right heart catheterization
US10029955B1 (en) 2011-10-24 2018-07-24 Slt Technologies, Inc. Capsule for high pressure, high temperature processing of materials and methods of use
US20130105817A1 (en) 2011-10-26 2013-05-02 Triquint Semiconductor, Inc. High electron mobility transistor structure and method
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
KR101869045B1 (ko) * 2012-01-11 2018-06-19 삼성전자 주식회사 고전자이동도 트랜지스터 및 그 제조방법
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
EP2823515A4 (en) 2012-03-06 2015-08-19 Soraa Inc LIGHT-EMITTING DIODES WITH MATERIAL LAYERS WITH LOW BREAKING INDEX TO REDUCE LIGHT PIPE EFFECTS
JP5701805B2 (ja) * 2012-03-28 2015-04-15 株式会社東芝 窒化物半導体ショットキダイオードの製造方法
JP5715588B2 (ja) 2012-03-28 2015-05-07 株式会社東芝 半導体装置およびその製造方法
JP5995309B2 (ja) * 2012-03-28 2016-09-21 住友電工デバイス・イノベーション株式会社 半導体装置及びその製造方法
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US20130328061A1 (en) * 2012-06-07 2013-12-12 Hrl Laboratories, Llc. Normally-off gallium nitride transistor with insulating gate and method of making the same
US8975664B2 (en) * 2012-06-27 2015-03-10 Triquint Semiconductor, Inc. Group III-nitride transistor using a regrown structure
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
WO2014043187A1 (en) * 2012-09-11 2014-03-20 University Of Florida Research Foundation, Incorporated High electron mobility transistors having improved reliability
US20140077266A1 (en) * 2012-09-14 2014-03-20 Power Integrations, Inc. Heterostructure Transistor with Multiple Gate Dielectric Layers
JP5899093B2 (ja) * 2012-09-18 2016-04-06 三菱電機株式会社 半導体装置の製造方法
US9099490B2 (en) * 2012-09-28 2015-08-04 Intel Corporation Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
JP6179158B2 (ja) 2013-03-27 2017-08-16 三菱電機株式会社 トランジスタの製造方法、増幅器の製造方法
US9443737B2 (en) * 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
JP6111821B2 (ja) * 2013-04-25 2017-04-12 三菱電機株式会社 電界効果トランジスタ
US9704959B2 (en) 2013-05-21 2017-07-11 Massachusetts Institute Of Technology Enhancement-mode transistors with increased threshold voltage
US9231094B2 (en) 2013-05-21 2016-01-05 Globalfoundries Inc. Elemental semiconductor material contact for high electron mobility transistor
US9276077B2 (en) 2013-05-21 2016-03-01 Globalfoundries Inc. Contact metallurgy for self-aligned high electron mobility transistor
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
WO2015009514A1 (en) 2013-07-19 2015-01-22 Transphorm Inc. Iii-nitride transistor including a p-type depleting layer
JP6299117B2 (ja) 2013-08-30 2018-03-28 三菱電機株式会社 窒化物半導体デバイスの製造方法、バーンイン装置
KR102100928B1 (ko) * 2013-10-17 2020-05-15 삼성전자주식회사 고전자 이동도 트랜지스터
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
KR102163725B1 (ko) * 2013-12-03 2020-10-08 삼성전자주식회사 반도체 소자 및 그 제조방법
US9437724B2 (en) * 2014-04-21 2016-09-06 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and method of manufacturing the semiconductor device
US20150372096A1 (en) * 2014-06-20 2015-12-24 Ishiang Shih High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN104201202B (zh) * 2014-09-17 2017-01-25 电子科技大学 一种具有复合势垒层的氮化镓基异质结场效应管
CN104282735A (zh) * 2014-09-17 2015-01-14 电子科技大学 一种具有负离子注入钝化层的场效应晶体管
JP6292104B2 (ja) * 2014-11-17 2018-03-14 三菱電機株式会社 窒化物半導体装置の製造方法
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US9553155B2 (en) * 2015-02-04 2017-01-24 Infineon Technologies Austria Ag Semiconductor device and method
TWI626742B (zh) 2015-06-18 2018-06-11 台達電子工業股份有限公司 半導體裝置
JP2017092083A (ja) 2015-11-02 2017-05-25 富士通株式会社 化合物半導体装置及びその製造方法
ITUB20155862A1 (it) * 2015-11-24 2017-05-24 St Microelectronics Srl Transistore di tipo normalmente spento con ridotta resistenza in stato acceso e relativo metodo di fabbricazione
WO2017123999A1 (en) 2016-01-15 2017-07-20 Transphorm Inc. Enhancement mode iii-nitride devices having an al(1-x)sixo gate insulator
TWI762486B (zh) 2016-05-31 2022-05-01 美商創世舫科技有限公司 包含漸變空乏層的三族氮化物裝置
JP2018026431A (ja) 2016-08-09 2018-02-15 株式会社東芝 窒化物半導体装置
JP6885710B2 (ja) 2016-11-16 2021-06-16 株式会社アドバンテスト 化合物半導体装置およびその製造方法
US10174438B2 (en) 2017-03-30 2019-01-08 Slt Technologies, Inc. Apparatus for high pressure reaction
TWI736600B (zh) 2017-03-31 2021-08-21 聯穎光電股份有限公司 高電子遷移率電晶體
TWI722166B (zh) * 2017-04-10 2021-03-21 聯穎光電股份有限公司 高電子遷移率電晶體
TWI649873B (zh) 2017-07-26 2019-02-01 財團法人工業技術研究院 三族氮化物半導體結構
CN109659361B (zh) 2017-10-12 2022-03-04 电力集成公司 用于异质结器件的栅极堆叠体
TWI661555B (zh) * 2017-12-28 2019-06-01 新唐科技股份有限公司 增強型高電子遷移率電晶體元件
CN111092118B (zh) * 2018-10-23 2023-03-24 世界先进积体电路股份有限公司 半导体装置及其制造方法
CN112599586B (zh) * 2020-11-24 2022-11-29 上海工程技术大学 一种高可靠性氮化镓基功率器件及制备方法
CN116711083A (zh) * 2020-12-02 2023-09-05 美国亚德诺半导体公司 具有导电部件以控制电气特性的化合物半导体器件
WO2022126353A1 (zh) * 2020-12-15 2022-06-23 华为技术有限公司 高电子迁移率晶体管及其制作方法、芯片和电子设备
KR20230000718A (ko) * 2021-06-25 2023-01-03 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조 방법
EP4213215A1 (en) * 2022-01-12 2023-07-19 Nexperia B.V. Multi-finger high-electron mobility transistor
CN115588616B (zh) * 2022-12-12 2023-03-28 江苏长晶科技股份有限公司 一种增强型氮化镓高电子迁移率晶体管制造方法及器件

Family Cites Families (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129173A (en) 1974-02-01 1976-11-10 Chisso Corp Semi conductor with high voltage proof schottky electrode and it's man uacturing method.
JPS5539636A (en) 1978-09-13 1980-03-19 Nec Corp Composite semiconductor
JPS62136881A (ja) 1985-12-11 1987-06-19 Fujitsu Ltd 半導体装置
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
DE3823347A1 (de) 1988-07-09 1990-01-11 Semikron Elektronik Gmbh Leistungs-halbleiterelement
JP2697111B2 (ja) 1989-04-06 1998-01-14 三菱化学株式会社 4―アルコキシピラゾール類およびこれを有効成分とする殺虫、殺ダニ剤
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5128729A (en) * 1990-11-13 1992-07-07 Motorola, Inc. Complex opto-isolator with improved stand-off voltage stability
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
DE69229265T2 (de) 1991-03-18 1999-09-23 Trustees Of Boston University, Boston Verfahren zur herstellung und dotierung hochisolierender dünner schichten aus monokristallinem galliumnitrid
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5488237A (en) * 1992-02-14 1996-01-30 Sumitomo Electric Industries, Ltd. Semiconductor device with delta-doped layer in channel region
JPH05326890A (ja) * 1992-05-07 1993-12-10 Nec Corp 出力バッファ回路
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
JPH07283140A (ja) 1994-04-05 1995-10-27 Nippon Telegr & Teleph Corp <Ntt> 活性原子の供給制御方法
JPH07326737A (ja) * 1994-05-31 1995-12-12 Nippon Steel Corp インピーダンス線路、フィルタ素子、遅延素子および半導体装置
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
GB2296373B (en) 1994-12-14 1997-09-10 Toshiba Cambridge Res Center Semiconductor device
JPH08264760A (ja) * 1995-03-23 1996-10-11 Mitsubishi Electric Corp ヘテロ接合電界効果型トランジスタとその製造方法
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
JPH09246527A (ja) * 1996-03-08 1997-09-19 Toshiba Corp 半導体装置
JP3449116B2 (ja) 1996-05-16 2003-09-22 ソニー株式会社 半導体装置
JP3376211B2 (ja) 1996-05-29 2003-02-10 株式会社東芝 半導体装置、半導体基板の製造方法及び半導体装置の製造方法
US5920105A (en) 1996-09-19 1999-07-06 Fujitsu Limited Compound semiconductor field effect transistor having an amorphous gas gate insulation layer
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
JPH10173036A (ja) * 1996-12-11 1998-06-26 Nec Corp 半導体装置および半導体の高抵抗化方法
JPH10189565A (ja) 1996-12-26 1998-07-21 Tokyo Electron Ltd ウエハボート
JPH10326890A (ja) * 1997-03-21 1998-12-08 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
JP3161516B2 (ja) * 1997-10-03 2001-04-25 日本電気株式会社 半導体装置の製造方法
JP3439111B2 (ja) 1998-03-09 2003-08-25 古河電気工業株式会社 高移動度トランジスタ
JPH11261051A (ja) 1998-03-09 1999-09-24 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP2000068498A (ja) 1998-08-21 2000-03-03 Nippon Telegr & Teleph Corp <Ntt> 絶縁性窒化物膜およびそれを用いた半導体装置
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
JP3159198B2 (ja) * 1999-02-19 2001-04-23 住友電気工業株式会社 電界効果トランジスタ
JP4224737B2 (ja) 1999-03-04 2009-02-18 ソニー株式会社 半導体素子
JP2000266117A (ja) 1999-03-15 2000-09-26 Kosuke Nagaya 回転磁気ダンパ
JP3710339B2 (ja) 1999-08-31 2005-10-26 シャープ株式会社 GaN系化合物半導体発光素子の製造方法
JP2001085670A (ja) 1999-09-14 2001-03-30 Nec Corp 電界効果型トランジスタ及びその製造方法
JP3414678B2 (ja) 1999-09-29 2003-06-09 三容真空工業株式会社 スパッタによる成膜方法とその装置
US6414340B1 (en) * 1999-11-04 2002-07-02 Raytheon Company Field effect transistor and method for making the same
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP3944341B2 (ja) * 2000-03-28 2007-07-11 株式会社東芝 酸化物エピタキシャル歪格子膜の製造法
JP3708810B2 (ja) 2000-09-01 2005-10-19 シャープ株式会社 窒化物系iii−v族化合物半導体装置
US6452221B1 (en) * 2000-09-21 2002-09-17 Trw Inc. Enhancement mode device
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US20020173062A1 (en) * 2001-05-17 2002-11-21 Lung-Chien Chen Method for manufacturing GaN-based LED
US6794719B2 (en) * 2001-06-28 2004-09-21 Koninklijke Philips Electronics N.V. HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggedness
JP2005527102A (ja) * 2001-07-24 2005-09-08 クリー インコーポレイテッド 高電子移動度トランジスタ及びその製造方法
CA2456662A1 (en) * 2001-08-07 2003-02-20 Jan Kuzmik High electron mobility devices
US6833564B2 (en) 2001-11-02 2004-12-21 Lumileds Lighting U.S., Llc Indium gallium nitride separate confinement heterostructure light emitting devices
JP2003209124A (ja) 2001-11-06 2003-07-25 Sony Corp 電界効果半導体素子の製造方法及び電界効果半導体素子
US7030428B2 (en) * 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
JP3705431B2 (ja) * 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US8089097B2 (en) * 2002-12-27 2012-01-03 Momentive Performance Materials Inc. Homoepitaxial gallium-nitride-based electronic devices and method for producing same
US6933544B2 (en) * 2003-01-29 2005-08-23 Kabushiki Kaisha Toshiba Power semiconductor device
WO2004068590A1 (en) * 2003-01-29 2004-08-12 Kabushiki Kaisha Toshiba Power semiconductor device
US7078743B2 (en) * 2003-05-15 2006-07-18 Matsushita Electric Industrial Co., Ltd. Field effect transistor semiconductor device
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
JP2005086171A (ja) 2003-09-11 2005-03-31 Fujitsu Ltd 半導体装置及びその製造方法
JP4417677B2 (ja) * 2003-09-19 2010-02-17 株式会社東芝 電力用半導体装置
US7052942B1 (en) * 2003-09-19 2006-05-30 Rf Micro Devices, Inc. Surface passivation of GaN devices in epitaxial growth chamber
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US20050133816A1 (en) * 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7170111B2 (en) * 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
GB2412009B (en) 2004-03-11 2006-01-25 Toshiba Research Europ Limited A semiconductor device and method of its manufacture
US7354532B2 (en) * 2004-04-13 2008-04-08 E.I. Du Pont De Nemours And Company Compositions of electrically conductive polymers and non-polymeric fluorinated organic acids
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
JP2005340417A (ja) * 2004-05-26 2005-12-08 Mitsubishi Electric Corp ヘテロ接合電界効果型半導体装置
JP4682541B2 (ja) 2004-06-15 2011-05-11 豊田合成株式会社 半導体の結晶成長方法
WO2006083383A2 (en) * 2004-12-01 2006-08-10 Bae Systems Information And Electronic Systems Integration, Inc. Low temperature grown insulated gate phemt device
US7161194B2 (en) * 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7253455B2 (en) * 2005-04-05 2007-08-07 Freescale Semiconductor, Inc. pHEMT with barrier optimized for low temperature operation
US20060226442A1 (en) * 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
US7800131B2 (en) 2005-06-10 2010-09-21 Nec Corporation Field effect transistor
CN101976686A (zh) 2005-06-10 2011-02-16 日本电气株式会社 场效应晶体管
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
WO2008027027A2 (en) 2005-09-07 2008-03-06 Cree, Inc Transistor with fluorine treatment
US7585329B2 (en) * 2006-11-28 2009-09-08 Depuy Products, Inc. Modular proximal body trial
US8176696B2 (en) * 2007-10-24 2012-05-15 Leblang Dennis William Building construction for forming columns and beams within a wall mold

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI618244B (zh) * 2017-06-06 2018-03-11 Huang Zhi Shu N-face III族/氮化物磊晶結構及其主動元件與其積體化之極性反轉製作方法

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