JP5416399B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5416399B2 JP5416399B2 JP2008327004A JP2008327004A JP5416399B2 JP 5416399 B2 JP5416399 B2 JP 5416399B2 JP 2008327004 A JP2008327004 A JP 2008327004A JP 2008327004 A JP2008327004 A JP 2008327004A JP 5416399 B2 JP5416399 B2 JP 5416399B2
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- 239000004065 semiconductor Substances 0.000 title claims description 151
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 35
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 25
- 229910052801 chlorine Inorganic materials 0.000 claims description 23
- 229910002704 AlGaN Inorganic materials 0.000 description 41
- 125000004429 atom Chemical group 0.000 description 25
- 238000005468 ion implantation Methods 0.000 description 25
- 239000000460 chlorine Substances 0.000 description 21
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 17
- 230000015556 catabolic process Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 125000001153 fluoro group Chemical group F* 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004140 HfO Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910003070 TaOx Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、本発明の実施形態に係る半導体装置の要部断面を示す模式図である。本実施形態では、半導体装置としてGaN系HEMT(High Electron Mobility Transistor)を一例に挙げて説明する。
例えば、図5に示す第2実施形態では、ゲート電極7とドレイン電極6との間の第2の半導体層4中であってゲート電極7近傍部分にも選択的に、前述したハロゲン族原子のような、第2の半導体層4中で負電荷を帯びる原子が添加されている。
通常、AlGaNは表面が不安定なことが多い。したがって、第2の半導体層4としてAlGaNを用いた場合には、図6に示すように、第2の半導体層4の上に、より安定した材料・組成をもつ層(例えばアンドープもしくはn型のGaN層)をキャップ層11として設けることで、素子表面状態を安定させることができ、特性のばらつきを抑えることができる。
図7は、本発明の第4実施形態に係る半導体装置の要部断面を示す模式図である。
図10は、本発明の第5実施形態に係る半導体装置の要部断面を示す模式図である。
Claims (3)
- AlXGa1−XN(0≦X≦1)を含む第1の半導体層と、
前記第1の半導体層上に設けられ、AlYGa1−YN(0≦Y≦1、X<Y)を含み、前記第1の半導体層よりもバンドギャップが大きい第2の半導体層と、
前記第2の半導体層上に設けられた電極と、を備え、
少なくとも前記電極直下の前記第2の半導体層中であって前記第1の半導体層に達しない深さの部分に、2次元電子ガスを低減しうる負の固定電荷を有する塩素原子が添加されていることを特徴とする半導体装置。 - 前記電極はゲート電極であることを特徴とする請求項1記載の半導体装置。
- 前記電極はアノード電極であることを特徴とする請求項1記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008327004A JP5416399B2 (ja) | 2008-02-13 | 2008-12-24 | 半導体装置 |
US12/371,216 US8030660B2 (en) | 2008-02-13 | 2009-02-13 | Semiconductor device |
US13/218,925 US8227834B2 (en) | 2008-02-13 | 2011-08-26 | Semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008032187 | 2008-02-13 | ||
JP2008032187 | 2008-02-13 | ||
JP2008327004A JP5416399B2 (ja) | 2008-02-13 | 2008-12-24 | 半導体装置 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013121885A Division JP5671100B2 (ja) | 2008-02-13 | 2013-06-10 | 半導体装置 |
JP2013235973A Division JP2014057092A (ja) | 2008-02-13 | 2013-11-14 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009218566A JP2009218566A (ja) | 2009-09-24 |
JP5416399B2 true JP5416399B2 (ja) | 2014-02-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008327004A Expired - Fee Related JP5416399B2 (ja) | 2008-02-13 | 2008-12-24 | 半導体装置 |
Country Status (2)
Country | Link |
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US (2) | US8030660B2 (ja) |
JP (1) | JP5416399B2 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5134378B2 (ja) * | 2008-01-07 | 2013-01-30 | シャープ株式会社 | 電界効果トランジスタ |
US8159004B2 (en) * | 2008-08-26 | 2012-04-17 | Sanken Electric Co., Ltd. | Compound semiconductor device having dopant concentration gradient |
US7842974B2 (en) * | 2009-02-18 | 2010-11-30 | Alpha & Omega Semiconductor, Inc. | Gallium nitride heterojunction schottky diode |
KR20110032845A (ko) * | 2009-09-24 | 2011-03-30 | 삼성전자주식회사 | 전력 전자소자 및 그 제조방법 |
JP5611653B2 (ja) | 2010-05-06 | 2014-10-22 | 株式会社東芝 | 窒化物半導体素子 |
JP5776143B2 (ja) | 2010-07-06 | 2015-09-09 | サンケン電気株式会社 | 半導体装置 |
TWI421947B (zh) * | 2010-11-12 | 2014-01-01 | Univ Nat Chiao Tung | 氮化鎵電晶體的製作方法 |
JP5857415B2 (ja) * | 2011-02-24 | 2016-02-10 | 富士通株式会社 | 半導体装置の製造方法 |
JP5841417B2 (ja) * | 2011-11-30 | 2016-01-13 | 株式会社日立製作所 | 窒化物半導体ダイオード |
JP5701805B2 (ja) | 2012-03-28 | 2015-04-15 | 株式会社東芝 | 窒化物半導体ショットキダイオードの製造方法 |
JP5715588B2 (ja) * | 2012-03-28 | 2015-05-07 | 株式会社東芝 | 半導体装置およびその製造方法 |
US9136341B2 (en) | 2012-04-18 | 2015-09-15 | Rf Micro Devices, Inc. | High voltage field effect transistor finger terminations |
EP2667415B1 (en) * | 2012-05-22 | 2021-02-17 | Nexperia B.V. | Heterojunction semiconductor device and manufacturing method |
US20130328061A1 (en) * | 2012-06-07 | 2013-12-12 | Hrl Laboratories, Llc. | Normally-off gallium nitride transistor with insulating gate and method of making the same |
US9917080B2 (en) * | 2012-08-24 | 2018-03-13 | Qorvo US. Inc. | Semiconductor device with electrical overstress (EOS) protection |
US9147632B2 (en) | 2012-08-24 | 2015-09-29 | Rf Micro Devices, Inc. | Semiconductor device having improved heat dissipation |
KR101946454B1 (ko) * | 2012-09-18 | 2019-02-12 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조 방법 |
JP5777586B2 (ja) * | 2012-09-20 | 2015-09-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR102029834B1 (ko) * | 2013-02-07 | 2019-10-08 | 엘지이노텍 주식회사 | 전력반도체소자 |
FR3005202B1 (fr) * | 2013-04-30 | 2016-10-14 | Commissariat Energie Atomique | Procede de formation d'une zone implantee pour un transistor a heterojonction de type normalement bloque |
JP2015046444A (ja) * | 2013-08-27 | 2015-03-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9123791B2 (en) * | 2014-01-09 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device and method |
US9455327B2 (en) | 2014-06-06 | 2016-09-27 | Qorvo Us, Inc. | Schottky gated transistor with interfacial layer |
US9536803B2 (en) | 2014-09-05 | 2017-01-03 | Qorvo Us, Inc. | Integrated power module with improved isolation and thermal conductivity |
JP5956616B2 (ja) * | 2015-01-05 | 2016-07-27 | 株式会社東芝 | 窒化物半導体ショットキダイオード |
US10062684B2 (en) | 2015-02-04 | 2018-08-28 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US10615158B2 (en) | 2015-02-04 | 2020-04-07 | Qorvo Us, Inc. | Transition frequency multiplier semiconductor device |
US9583938B2 (en) | 2015-05-01 | 2017-02-28 | International Business Machines Corporation | Electrostatic discharge protection device with power management |
JP2018026431A (ja) | 2016-08-09 | 2018-02-15 | 株式会社東芝 | 窒化物半導体装置 |
CN107221565A (zh) * | 2017-05-23 | 2017-09-29 | 江南大学 | 基于离子注入氟实现高增益氮化镓肖特基二极管的制备方法 |
JP7021034B2 (ja) * | 2018-09-18 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
CN110707157B (zh) * | 2019-11-12 | 2022-03-04 | 西安电子科技大学 | 基于P+型保护环结构的AlGaN/GaN肖特基势垒二极管及制作方法 |
CN111681958A (zh) * | 2020-05-29 | 2020-09-18 | 华南理工大学 | 一种新型异质结构镁扩散制备常关型hemt器件的方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4041075B2 (ja) | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
JP4607506B2 (ja) | 2004-07-16 | 2011-01-05 | 株式会社東芝 | 半導体装置 |
US7638818B2 (en) * | 2005-09-07 | 2009-12-29 | Cree, Inc. | Robust transistors with fluorine treatment |
US8044432B2 (en) * | 2005-11-29 | 2011-10-25 | The Hong Kong University Of Science And Technology | Low density drain HEMTs |
JP5065616B2 (ja) | 2006-04-21 | 2012-11-07 | 株式会社東芝 | 窒化物半導体素子 |
JP2007294769A (ja) * | 2006-04-26 | 2007-11-08 | Toshiba Corp | 窒化物半導体素子 |
JP2008034411A (ja) * | 2006-07-26 | 2008-02-14 | Toshiba Corp | 窒化物半導体素子 |
JP2008130655A (ja) * | 2006-11-17 | 2008-06-05 | Toshiba Corp | 半導体素子 |
JP4695622B2 (ja) * | 2007-05-02 | 2011-06-08 | 株式会社東芝 | 半導体装置 |
-
2008
- 2008-12-24 JP JP2008327004A patent/JP5416399B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-13 US US12/371,216 patent/US8030660B2/en not_active Expired - Fee Related
-
2011
- 2011-08-26 US US13/218,925 patent/US8227834B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090200576A1 (en) | 2009-08-13 |
US20110309413A1 (en) | 2011-12-22 |
US8030660B2 (en) | 2011-10-04 |
JP2009218566A (ja) | 2009-09-24 |
US8227834B2 (en) | 2012-07-24 |
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