TW200710293A - Method and apparatus for producing group iii nitride crystal - Google Patents

Method and apparatus for producing group iii nitride crystal

Info

Publication number
TW200710293A
TW200710293A TW095108629A TW95108629A TW200710293A TW 200710293 A TW200710293 A TW 200710293A TW 095108629 A TW095108629 A TW 095108629A TW 95108629 A TW95108629 A TW 95108629A TW 200710293 A TW200710293 A TW 200710293A
Authority
TW
Taiwan
Prior art keywords
crystal
melt
seed crystal
group iii
iii nitride
Prior art date
Application number
TW095108629A
Other languages
English (en)
Other versions
TWI351452B (zh
Inventor
Hirokazu Iwata
Seiji Sarayama
Minoru Fukuda
Tetsuya Takahashi
Akira Takahashi
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Publication of TW200710293A publication Critical patent/TW200710293A/zh
Application granted granted Critical
Publication of TWI351452B publication Critical patent/TWI351452B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
TW095108629A 2005-03-14 2006-03-14 Method and apparatus for producing group iii nitride crystal TW200710293A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005070889 2005-03-14
JP2005070833 2005-03-14
JP2005070859 2005-03-14
JP2006066574A JP4603498B2 (ja) 2005-03-14 2006-03-10 Ｉｉｉ族窒化物結晶の製造方法及び製造装置

Publications (2)

Publication Number Publication Date
TW200710293A true TW200710293A (en) 2007-03-16
TWI351452B TWI351452B (zh) 2011-11-01

Family

ID=36991631

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095108629A TW200710293A (en) 2005-03-14 2006-03-14 Method and apparatus for producing group iii nitride crystal

Country Status (6)

Country Link
US (2) US8337617B2 (zh)
EP (1) EP1860213B8 (zh)
JP (1) JP4603498B2 (zh)
CN (1) CN1954101B (zh)
TW (1) TW200710293A (zh)
WO (1) WO2006098288A1 (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1775356A3 (en) * 2005-10-14 2009-12-16 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
CN101370971A (zh) * 2006-02-13 2009-02-18 日本碍子株式会社 从助熔剂中回收钠金属的方法
JP4968707B2 (ja) * 2006-03-06 2012-07-04 日本碍子株式会社 Ｉｉｉ族窒化物単結晶の育成方法
JP4848243B2 (ja) * 2006-10-13 2011-12-28 株式会社リコー 結晶製造装置
US7718002B2 (en) * 2007-03-07 2010-05-18 Ricoh Company, Ltd. Crystal manufacturing apparatus
JP4880500B2 (ja) * 2007-03-08 2012-02-22 株式会社リコー 結晶製造装置
JP4880499B2 (ja) * 2007-03-08 2012-02-22 株式会社リコー 結晶製造装置
JP4965465B2 (ja) * 2008-01-07 2012-07-04 日本碍子株式会社 窒化物単結晶の製造方法
JP5310534B2 (ja) 2009-12-25 2013-10-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP2012012259A (ja) 2010-07-01 2012-01-19 Ricoh Co Ltd 窒化物結晶およびその製造方法
JP5729182B2 (ja) 2010-08-31 2015-06-03 株式会社リコー ｎ型ＩＩＩ族窒化物単結晶の製造方法、ｎ型ＩＩＩ族窒化物単結晶および結晶基板
WO2013010118A1 (en) * 2011-07-13 2013-01-17 The Regents Of The University Of California Growth of bulk group-iii nitride crystals
JP5953684B2 (ja) 2011-09-14 2016-07-20 株式会社リコー １３族窒化物結晶の製造方法
JP5842490B2 (ja) 2011-09-14 2016-01-13 株式会社リコー １３族窒化物結晶、及び１３族窒化物結晶基板
JP6098028B2 (ja) 2011-09-14 2017-03-22 株式会社リコー 窒化ガリウム結晶、１３族窒化物結晶、１３族窒化物結晶基板および製造方法
JP5953683B2 (ja) 2011-09-14 2016-07-20 株式会社リコー １３族窒化物結晶、及び１３族窒化物結晶基板
JP5904421B2 (ja) 2012-01-11 2016-04-13 国立大学法人大阪大学 Ｉｉｉ族窒化物結晶および半導体装置の製造方法
CN103243389B (zh) 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
CN105256372B (zh) * 2015-11-27 2018-09-07 北京大学东莞光电研究院 一种GaN单晶装置
CN109680334A (zh) * 2019-03-07 2019-04-26 中国电子科技集团公司第四十六研究所 一种钠助熔剂法氮化镓单晶的生长装置
JP7363412B2 (ja) 2019-11-26 2023-10-18 株式会社レゾナック 単結晶製造装置

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5954874A (en) * 1996-10-17 1999-09-21 Hunter; Charles Eric Growth of bulk single crystals of aluminum nitride from a melt
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
US6562124B1 (en) * 1999-06-02 2003-05-13 Technologies And Devices International, Inc. Method of manufacturing GaN ingots
JP4056664B2 (ja) 1999-10-18 2008-03-05 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP4011828B2 (ja) 1999-06-09 2007-11-21 株式会社リコー Ｉｉｉ族窒化物結晶の結晶成長方法及びｉｉｉ族窒化物結晶の製造方法
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP3929657B2 (ja) 1999-09-29 2007-06-13 株式会社リコー 結晶成長方法およびｉｉｉ族窒化物結晶の製造方法
JP4094780B2 (ja) 1999-08-24 2008-06-04 株式会社リコー 結晶成長方法および結晶成長装置並びにｉｉｉ族窒化物結晶の製造方法および結晶製造装置
JP3868156B2 (ja) 1999-08-24 2007-01-17 株式会社リコー 結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶
JP2002068896A (ja) 2000-08-30 2002-03-08 Kobe Steel Ltd 窒化物単結晶製造方法及び製造装置
JP3966682B2 (ja) 2000-10-19 2007-08-29 株式会社リコー 結晶成長方法、結晶成長装置、結晶製造装置および結晶の製造方法
JP4055110B2 (ja) 2000-10-24 2008-03-05 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP2003160398A (ja) 2001-11-21 2003-06-03 Ricoh Co Ltd Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置
US7001457B2 (en) * 2001-05-01 2006-02-21 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
JP4551026B2 (ja) 2001-05-17 2010-09-22 株式会社リコー Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法
JP4381638B2 (ja) 2001-11-26 2009-12-09 株式会社リコー Ｉｉｉ族窒化物結晶の結晶製造方法
JP4245822B2 (ja) 2001-05-01 2009-04-02 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP4640899B2 (ja) 2001-06-28 2011-03-02 株式会社リコー Ｉｉｉ族窒化物結晶成長装置
JP4048476B2 (ja) 2001-05-22 2008-02-20 株式会社リコー 観察機能付ｉｉｉ族窒化物結晶製造装置および窒化物結晶製造方法
WO2002101120A2 (en) 2001-06-06 2002-12-19 Ammono Sp. Zo.O Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
JP2003313099A (ja) 2002-04-22 2003-11-06 Ricoh Co Ltd Ｉｉｉ族窒化物結晶成長装置
JP4278330B2 (ja) 2002-01-10 2009-06-10 株式会社リコー Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶製造装置
JP2003238296A (ja) 2001-12-05 2003-08-27 Ricoh Co Ltd Ｉｉｉ族窒化物結晶成長方法およびｉｉｉ族窒化物結晶成長装置
US7097707B2 (en) * 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
JP4014411B2 (ja) 2002-01-18 2007-11-28 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4801315B2 (ja) 2002-01-29 2011-10-26 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP4077643B2 (ja) 2002-03-28 2008-04-16 株式会社リコー Ｉｉｉ族窒化物結晶成長装置およびｉｉｉ族窒化物結晶成長方法
JP4159303B2 (ja) * 2002-03-28 2008-10-01 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法およびｉｉｉ族窒化物の結晶製造装置
JP4094878B2 (ja) 2002-04-04 2008-06-04 株式会社リコー Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶製造装置
JP4053336B2 (ja) 2002-04-08 2008-02-27 株式会社リコー Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶製造装置
JP4056785B2 (ja) 2002-04-22 2008-03-05 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法およびｉｉｉ族窒化物結晶の製造装置
JP4271408B2 (ja) 2002-04-22 2009-06-03 株式会社リコー Ｉｉｉ族窒化物結晶製造方法
JP4560287B2 (ja) * 2002-11-08 2010-10-13 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
US7220311B2 (en) * 2002-11-08 2007-05-22 Ricoh Company, Ltd. Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride
JP4508613B2 (ja) 2002-11-26 2010-07-21 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP2004189549A (ja) * 2002-12-12 2004-07-08 Sumitomo Metal Mining Co Ltd 窒化アルミニウム単結晶の製造方法
US7524691B2 (en) 2003-01-20 2009-04-28 Panasonic Corporation Method of manufacturing group III nitride substrate
JP4397695B2 (ja) 2003-01-20 2010-01-13 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
JP2004224600A (ja) * 2003-01-20 2004-08-12 Matsushita Electric Ind Co Ltd Ｉｉｉ族窒化物基板の製造方法および半導体装置
US7221037B2 (en) * 2003-01-20 2007-05-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride substrate and semiconductor device
JP4248276B2 (ja) 2003-03-17 2009-04-02 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4414241B2 (ja) 2003-03-25 2010-02-10 株式会社リコー Ｉｉｉ族窒化物の結晶製造方法
JP4216612B2 (ja) 2003-01-29 2009-01-28 株式会社リコー Ｉｉｉ族窒化物結晶の製造方法
JP4920875B2 (ja) * 2003-05-29 2012-04-18 パナソニック株式会社 Ｉｉｉ族窒化物結晶の製造方法、およびｉｉｉ族窒化物基板の製造方法
US7309534B2 (en) * 2003-05-29 2007-12-18 Matsushita Electric Industrial Co., Ltd. Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
WO2005095682A1 (ja) * 2004-03-31 2005-10-13 Ngk Insulators, Ltd. 窒化ガリウム単結晶の育成方法および窒化ガリウム単結晶
JP4919949B2 (ja) 2005-03-04 2012-04-18 日本碍子株式会社 単結晶を育成する方法および単結晶育成装置

Also Published As

Publication number Publication date
US20130074762A1 (en) 2013-03-28
EP1860213B8 (en) 2014-08-27
EP1860213A1 (en) 2007-11-28
TWI351452B (zh) 2011-11-01
US20080264331A1 (en) 2008-10-30
US9376763B2 (en) 2016-06-28
EP1860213A4 (en) 2011-07-20
US8337617B2 (en) 2012-12-25
CN1954101A (zh) 2007-04-25
CN1954101B (zh) 2010-05-19
JP4603498B2 (ja) 2010-12-22
JP2006290730A (ja) 2006-10-26
WO2006098288A1 (ja) 2006-09-21
EP1860213B1 (en) 2014-04-30

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