WO2009041053A1 - Iii族元素窒化物の結晶の製造方法および製造装置 - Google Patents

Iii族元素窒化物の結晶の製造方法および製造装置 Download PDF

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Publication number
WO2009041053A1
WO2009041053A1 PCT/JP2008/002674 JP2008002674W WO2009041053A1 WO 2009041053 A1 WO2009041053 A1 WO 2009041053A1 JP 2008002674 W JP2008002674 W JP 2008002674W WO 2009041053 A1 WO2009041053 A1 WO 2009041053A1
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Prior art keywords
starting material
group iii
iii element
element nitride
nitride crystal
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PCT/JP2008/002674
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English (en)
French (fr)
Inventor
Takeshi Hatakeyama
Hisashi Minemoto
Kouichi Hiranaka
Osamu Yamada
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Panasonic Corporation
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Priority to JP2009534185A priority Critical patent/JP5338672B2/ja
Priority to US12/679,372 priority patent/US9281438B2/en
Publication of WO2009041053A1 publication Critical patent/WO2009041053A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　III族元素窒化物の単結晶の製造方法である。坩堝内を加熱して、III族元素材料と、アルカリ金属またはアルカリ土類金属とを液状化させて原料液を生成するとともに、坩堝内に原料ガスを供給し、原料液と原料ガスとを反応させて、原料液中に浸漬されたテンプレート上にIII族元素窒化物の単結晶を成長させる。単結晶の成長後に残存する原料液を冷却固化して固化原料とし、固化原料の存在する坩堝内に水酸基を含む溶液を供給して、テンプレートの周囲から固化原料を除去することで、固化原料内からIII族元素窒化物の単結晶を取り出す。テンプレートを、坩堝の底面から距離をおいた位置に設置する。
PCT/JP2008/002674 2007-09-28 2008-09-26 Iii族元素窒化物の結晶の製造方法および製造装置 WO2009041053A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009534185A JP5338672B2 (ja) 2007-09-28 2008-09-26 Ｉｉｉ族元素窒化物の単結晶の製造方法および製造装置
US12/679,372 US9281438B2 (en) 2007-09-28 2008-09-26 Process for producing group III element nitride crystal and apparatus for producing group III element nitride crystal

Applications Claiming Priority (2)

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JP2007252796 2007-09-28
JP2007-252796 2007-09-28

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WO2009041053A1 true WO2009041053A1 (ja) 2009-04-02

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US (1) US9281438B2 (ja)
JP (1) JP5338672B2 (ja)
WO (1) WO2009041053A1 (ja)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171273A (ja) * 2009-01-23 2010-08-05 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
JP2010269967A (ja) * 2009-05-21 2010-12-02 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010269986A (ja) * 2009-05-25 2010-12-02 Panasonic Corp Ｉｉｉ族窒化物結晶の取り出し方法及びそれに用いる装置
JP2010269955A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010269968A (ja) * 2009-05-21 2010-12-02 Panasonic Corp 窒化物結晶製造方法および窒化物結晶製造装置
JP2010275152A (ja) * 2009-05-29 2010-12-09 Panasonic Corp 結晶の製造方法およびそれを用いた製造装置
JP2010285306A (ja) * 2009-06-10 2010-12-24 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010285288A (ja) * 2009-06-09 2010-12-24 Panasonic Corp 結晶製造方法および結晶製造装置
JP2011020903A (ja) * 2009-07-17 2011-02-03 Panasonic Corp 結晶製造方法および結晶製造装置
JP2012121766A (ja) * 2010-12-08 2012-06-28 Ihi Corp 窒化ガリウム反応容器の撹拌方法及び装置
JP2013177311A (ja) * 2013-06-13 2013-09-09 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法
JP2015057368A (ja) * 2014-10-29 2015-03-26 豊田合成株式会社 ＩＩＩ族窒化物半導体単結晶の製造方法およびＧａＮ基板の製造方法
US10100426B2 (en) 2014-03-18 2018-10-16 Ricoh Company, Ltd. Method for producing gallium nitride crystal

Families Citing this family (6)

* Cited by examiner, † Cited by third party
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JP4941448B2 (ja) * 2007-10-26 2012-05-30 豊田合成株式会社 Ｉｉｉ族窒化物半導体製造装置
US8507364B2 (en) * 2008-05-22 2013-08-13 Toyoda Gosei Co., Ltd. N-type group III nitride-based compound semiconductor and production method therefor
JP5147092B2 (ja) * 2009-03-30 2013-02-20 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
DE102009016137B4 (de) * 2009-04-03 2012-12-20 Sicrystal Ag Herstellungsverfahren für einen versetzungsarmen AlN-Volumeneinkristall und versetzungsarmes einkristallines AlN-Substrat
US20140261158A1 (en) * 2013-03-13 2014-09-18 Advanced Renewableenergy Company, Llc Furnance employing components for use with graphite hot zone
JP6714320B2 (ja) * 2014-03-18 2020-06-24 株式会社サイオクス １３族窒化物結晶の製造方法及び１３族窒化物結晶を有する積層体

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JP2005263622A (ja) * 2004-02-19 2005-09-29 Matsushita Electric Ind Co Ltd 化合物単結晶の製造方法、およびそれに用いる製造装置
JP2006131454A (ja) * 2004-11-05 2006-05-25 Ngk Insulators Ltd Ｉｉｉ属窒化物単結晶およびその製造方法
JP2008297153A (ja) * 2007-05-30 2008-12-11 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体製造装置、およびｉｉｉ族窒化物半導体の製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010171273A (ja) * 2009-01-23 2010-08-05 Sumitomo Electric Ind Ltd ＧａＮ結晶の成長方法
JP2010269955A (ja) * 2009-05-20 2010-12-02 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010269967A (ja) * 2009-05-21 2010-12-02 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010269968A (ja) * 2009-05-21 2010-12-02 Panasonic Corp 窒化物結晶製造方法および窒化物結晶製造装置
JP2010269986A (ja) * 2009-05-25 2010-12-02 Panasonic Corp Ｉｉｉ族窒化物結晶の取り出し方法及びそれに用いる装置
JP2010275152A (ja) * 2009-05-29 2010-12-09 Panasonic Corp 結晶の製造方法およびそれを用いた製造装置
JP2010285288A (ja) * 2009-06-09 2010-12-24 Panasonic Corp 結晶製造方法および結晶製造装置
JP2010285306A (ja) * 2009-06-10 2010-12-24 Panasonic Corp 結晶製造方法および結晶製造装置
JP2011020903A (ja) * 2009-07-17 2011-02-03 Panasonic Corp 結晶製造方法および結晶製造装置
JP2012121766A (ja) * 2010-12-08 2012-06-28 Ihi Corp 窒化ガリウム反応容器の撹拌方法及び装置
JP2013177311A (ja) * 2013-06-13 2013-09-09 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の製造方法
US10100426B2 (en) 2014-03-18 2018-10-16 Ricoh Company, Ltd. Method for producing gallium nitride crystal
JP2015057368A (ja) * 2014-10-29 2015-03-26 豊田合成株式会社 ＩＩＩ族窒化物半導体単結晶の製造方法およびＧａＮ基板の製造方法

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Publication number Publication date
US9281438B2 (en) 2016-03-08
JP5338672B2 (ja) 2013-11-13
US20100192839A1 (en) 2010-08-05
JPWO2009041053A1 (ja) 2011-01-20

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