JP5147092B2 - Iii族窒化物半導体の製造方法 - Google Patents
Iii族窒化物半導体の製造方法 Download PDFInfo
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- JP5147092B2 JP5147092B2 JP2009082280A JP2009082280A JP5147092B2 JP 5147092 B2 JP5147092 B2 JP 5147092B2 JP 2009082280 A JP2009082280 A JP 2009082280A JP 2009082280 A JP2009082280 A JP 2009082280A JP 5147092 B2 JP5147092 B2 JP 5147092B2
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- group iii
- dopant
- alkali metal
- nitride semiconductor
- iii nitride
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- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 150000004767 nitrides Chemical class 0.000 title claims description 40
- 239000013078 crystal Substances 0.000 claims description 63
- 239000002019 doping agent Substances 0.000 claims description 58
- 229910052783 alkali metal Inorganic materials 0.000 claims description 46
- 150000001340 alkali metals Chemical class 0.000 claims description 46
- 239000011734 sodium Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 42
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 40
- 229910052708 sodium Inorganic materials 0.000 claims description 40
- 229910052732 germanium Inorganic materials 0.000 claims description 36
- 239000007788 liquid Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 239000011701 zinc Substances 0.000 claims description 15
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 229910045601 alloy Inorganic materials 0.000 claims description 11
- 239000000956 alloy Substances 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 10
- 230000008018 melting Effects 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 description 68
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 33
- 229910052733 gallium Inorganic materials 0.000 description 33
- 239000000758 substrate Substances 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 7
- 229910000927 Ge alloy Inorganic materials 0.000 description 6
- 238000007716 flux method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 3
- 229910000528 Na alloy Inorganic materials 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000002073 fluorescence micrograph Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005191 phase separation Methods 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Description
11:坩堝
12:加熱装置
14:供給管
15:排気管
16:固体ガリウム
17:固体ゲルマニウム
18:保持用台座
19:種結晶基板
20:固体ナトリウム
Claims (8)
- III 族金属とアルカリ金属およびドーパントを少なくとも含む混合融液と、少なくとも窒素を含む気体とを反応させ、種結晶にIII 族窒化物半導体を結晶成長させるIII 族窒化物半導体の製造方法において、
前記アルカリ金属がアルカリ金属液体となる前に、前記III 族金属がIII 族金属液体となり、
そのIII 族金属液体を前記アルカリ金属と接触させることなく、そのIII 族金属液体を、前記ドーパントと混合して混合融液とし、
その後に、前記アルカリ金属をアルカリ金属液体とし、
前記アルカリ金属液体と、前記III 族金属とドーパントとの混合融液を接触させる、
ことを特徴とするIII 族窒化物半導体の製造方法。 - 前記III 族金属と前記ドーパントとの混合融液を、前記III 族金属と前記ドーパントとの合金とすることを特徴とする請求項1に記載のIII 族窒化物半導体の製造方法。
- 前記ドーパントは、前記III 族金属との合金の融点が、前記アルカリ金属と前記ドーパントとの合金の融点よりも低くなる材料であることを特徴とする請求項2に記載のIII 族窒化物半導体の製造方法。
- 坩堝に、前記アルカリ金属、前記III 族金属、および前記ドーパントを配置するに際して、前記III 族金属と前記アルカリ金属とは離間し、前記III 族金属と前記ドーパントとを接近させて配置させたことを特徴する請求項1ないし請求項3のいずれか1項に記載のIII 族窒化物半導体の製造方法。
- 前記坩堝の底面に対して、前記種結晶を傾斜して設け、その種結晶上に前記アルカリ金属を設け、前記坩堝の底面又は前記坩堝の底面と前記種結晶の裏面との間の空間に、前記III 族金属と前記ドーパントとを設けたことを特徴とする請求項4に記載のIII 族窒化物半導体の製造方法。
- 前記ドーパントは、前記アルカリ金属液体と前記ドーパント液体との混合溶液が相分離する材料であることを特徴とする請求項1ないし請求項5のいずれか1項に記載のIII 族窒化物半導体の製造方法。
- 前記アルカリ金属はナトリウム、前記ドーパントはゲルマニウムであることを特徴とする請求項1ないし請求項5のいずれか1項に記載のIII 族窒化物半導体の製造方法。
- 前記アルカリ金属はナトリウム、前記ドーパントは亜鉛であることを特徴とする請求項6に記載のIII 族窒化物半導体の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009082280A JP5147092B2 (ja) | 2009-03-30 | 2009-03-30 | Iii族窒化物半導体の製造方法 |
US12/662,006 US8501141B2 (en) | 2009-03-30 | 2010-03-26 | Method for producing group III nitride semiconductor |
CN2010101398906A CN101851785B (zh) | 2009-03-30 | 2010-03-30 | 制造ⅲ族氮化物半导体的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009082280A JP5147092B2 (ja) | 2009-03-30 | 2009-03-30 | Iii族窒化物半導体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010235330A JP2010235330A (ja) | 2010-10-21 |
JP5147092B2 true JP5147092B2 (ja) | 2013-02-20 |
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JP2009082280A Active JP5147092B2 (ja) | 2009-03-30 | 2009-03-30 | Iii族窒化物半導体の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8501141B2 (ja) |
JP (1) | JP5147092B2 (ja) |
CN (1) | CN101851785B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013147326A1 (ja) | 2012-03-30 | 2013-10-03 | 日本碍子株式会社 | 13族元素窒化物結晶の製造方法および融液組成物 |
JP6208416B2 (ja) * | 2012-09-10 | 2017-10-04 | 豊田合成株式会社 | GaN半導体単結晶の製造方法 |
CN110295390A (zh) * | 2014-03-18 | 2019-10-01 | 赛奥科思有限公司 | 氮化镓晶体的制造方法 |
CN104878451B (zh) * | 2015-06-16 | 2017-07-28 | 北京大学东莞光电研究院 | 一种氮化物单晶生长装置 |
JP6679024B2 (ja) * | 2016-06-16 | 2020-04-15 | パナソニック株式会社 | 結晶成長装置及び結晶製造方法 |
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JP3622440B2 (ja) | 1997-08-18 | 2005-02-23 | 日立電線株式会社 | 窒化物結晶の成長方法およびGaN結晶の成長方法 |
JP4011828B2 (ja) | 1999-06-09 | 2007-11-21 | 株式会社リコー | Iii族窒化物結晶の結晶成長方法及びiii族窒化物結晶の製造方法 |
US6592663B1 (en) * | 1999-06-09 | 2003-07-15 | Ricoh Company Ltd. | Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate |
JP3868156B2 (ja) | 1999-08-24 | 2007-01-17 | 株式会社リコー | 結晶成長方法および結晶成長装置およびiii族窒化物結晶 |
CN1113988C (zh) * | 1999-09-29 | 2003-07-09 | 中国科学院物理研究所 | 一种氮化镓单晶的热液生长方法 |
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WO2004067814A1 (ja) | 2003-01-28 | 2004-08-12 | Osaka Industrial Promotion Organization | Iii族元素窒化物単結晶の製造方法およびそれにより得られたiii族元素窒化物透明単結晶 |
EP1634980A4 (en) * | 2003-03-17 | 2009-02-25 | Osaka Ind Promotion Org | METHOD FOR PRODUCING A GROUP III NITRIDE CRYSTAL AND DEVICE THEREFOR |
JP2004300024A (ja) | 2003-03-20 | 2004-10-28 | Matsushita Electric Ind Co Ltd | Iii族元素窒化物結晶の製造方法、それにより得られたiii族元素窒化物結晶およびそれを用いた半導体装置 |
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2009
- 2009-03-30 JP JP2009082280A patent/JP5147092B2/ja active Active
-
2010
- 2010-03-26 US US12/662,006 patent/US8501141B2/en active Active
- 2010-03-30 CN CN2010101398906A patent/CN101851785B/zh active Active
Also Published As
Publication number | Publication date |
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CN101851785A (zh) | 2010-10-06 |
US8501141B2 (en) | 2013-08-06 |
CN101851785B (zh) | 2013-05-22 |
US20100247418A1 (en) | 2010-09-30 |
JP2010235330A (ja) | 2010-10-21 |
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